Abstract

Photoinduced changes in the optical properties of amorphous chalcogenide As2S3 thin films are explained by using the density matrix formalism. The treatment based on the double well potential model for a four-level system gives an improved analytic expression for nonlinear optical absorption coefficients and explicitly shows the break of reciprocity law between illumination intensity and exposure. Photodarkening and photobleaching kinetics obtained theoretically are compared with experimental results obtained in the present work.

© 1988 Optical Society of America

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