Abstract

We report a hybrid organic light-emitting device (HOLED) with an inorganic hole transport layer (HTL) of silicon-rich silicon oxide (Si1+xO2), whose mobility can be tunable by changing the degree of excess silicon x. The structure of the HOLED is designed as indium tin oxide/ Si1+xO2 (30nm)/ buffer/ AlQ (45nm)/ Bphen:Cs2CO3 (15nm)/ Sm (5nm)/ Au (15nm). When x is equal to 3.7, the corresponding mobility of Si1+xO2 is about 3.3×105cm2V1s1, which is close to that of AlQ, and this HOLED has achieved a maximum current efficiency of 3.6cd/A at 20mA/cm2, which is even higher than that of the typical organic light-emitting device having NPB as an HTL.

© 2010 Optical Society of America

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