Abstract

We present a comprehensive theoretical study on the effects of two-photon absorption, free-carrier-induced loss, and high-order dispersion on the modulational instability (MI) at low-input powers in silicon-on-insulator nano-waveguides. The MI analysis is carried out in both the normal and anomalous dispersion regimes at telecommunication wavelength. To realize these two different kinds of dispersion, two different waveguide structures have been considered. Further, the effects of carrier lifetime and power dependence on MI gain spectra have also been delineated.

© 2017 Optical Society of America

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