Abstract

Optical feedback tolerance is experimentally investigated on a 600-μm-long quantum-dash based Fabry-Pérot laser emitting at 1.57μm. While quantum-dashes are structurally intermediate to quantum-wells and quantum-dots, the observed behaviour is distinctly like that of a quantum-well based laser but with greater stability. Coherence collapse and low-frequency fluctuation regimes are observed and are reported here. The onset of the coherence collapse regime is experimentally determined and is found to vary from -29 dB to -21 dB external feedback level when increasing the current from twice to nine times the threshold current.

©2007 Optical Society of America

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  1. R.W. Tkach and A. R. Chraplyvy, “Regimes of Feedback Effects in 1.5-μm Distributed Feedback Lasers,” IEEE J. Lightwave Technol. 4, 1655–1661 (1986).
    [Crossref]
  2. D. Lenstra, B. H. Verbeek, and A. J. Den Boef, “Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback,” IEEE J. Quantum Electron. 21, 674–679 (1985).
    [Crossref]
  3. J. Mork, B. Tromborg, and P. L. Christiansen, “Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis,” IEEE J. Quantum Electron. 24, 123–133 (1988).
    [Crossref]
  4. D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 196–205 (1997).
    [Crossref]
  5. T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. 11, 1527–1529 (1999).
    [Crossref]
  6. H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, “High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE Photon. Technol. Lett. 15, 1504–1506 (2003).
    [Crossref]
  7. D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
    [Crossref]
  8. D. O’Brien, S. P. Hegarty, G. Huyet, and A. V. Uskov, “Sensitivity of quantum-dot semiconductor lasers to optical feedback,” Opt. Lett. 29, 1072–1074 (2004).
    [Crossref] [PubMed]
  9. R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. 13, 767–769 (2001).
    [Crossref]
  10. R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Long-wavelength InP-based quantum-dash lasers,” IEEE Photon. Technol. 14, 735–737 (2002).
    [Crossref]
  11. F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
    [Crossref]
  12. G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
    [Crossref]
  13. S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
    [Crossref]
  14. C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor of semiconductor lasers,” Appl. Phys. Lett. 42, 328–330 (1983).
    [Crossref]
  15. O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, “Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers,” Electron. Lett. 41, 911–912 (2005).
    [Crossref]
  16. A. Olsson and C. L. Tang, “Coherent optical interference effects in external cavity semiconductor lasers,” IEEE J. Quantum Electron. 17, 1320–1323 (1981).
    [Crossref]
  17. B. W. Hakki and T. L. Paoli, “CW degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain,” J. Appl. Phys. 44, 4113–4119 (1973).
    [Crossref]
  18. J. Ye, H. Li, and J. G. McInerney, “Period-doubling route to chaos in a semiconductor laser with weak optical feedback,” Phys. Rev. A 47, 2249–2252 (1993).
    [Crossref] [PubMed]
  19. G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, “Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback,” Europhys. Lett. 40, 619–624 (1997).
    [Crossref]

2007 (2)

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

2006 (1)

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

2005 (1)

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, “Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers,” Electron. Lett. 41, 911–912 (2005).
[Crossref]

2004 (1)

2003 (2)

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, “High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE Photon. Technol. Lett. 15, 1504–1506 (2003).
[Crossref]

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

2002 (1)

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Long-wavelength InP-based quantum-dash lasers,” IEEE Photon. Technol. 14, 735–737 (2002).
[Crossref]

2001 (1)

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. 13, 767–769 (2001).
[Crossref]

1999 (1)

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. 11, 1527–1529 (1999).
[Crossref]

1997 (2)

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 196–205 (1997).
[Crossref]

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, “Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback,” Europhys. Lett. 40, 619–624 (1997).
[Crossref]

1993 (1)

J. Ye, H. Li, and J. G. McInerney, “Period-doubling route to chaos in a semiconductor laser with weak optical feedback,” Phys. Rev. A 47, 2249–2252 (1993).
[Crossref] [PubMed]

1988 (1)

J. Mork, B. Tromborg, and P. L. Christiansen, “Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis,” IEEE J. Quantum Electron. 24, 123–133 (1988).
[Crossref]

1986 (1)

R.W. Tkach and A. R. Chraplyvy, “Regimes of Feedback Effects in 1.5-μm Distributed Feedback Lasers,” IEEE J. Lightwave Technol. 4, 1655–1661 (1986).
[Crossref]

1985 (1)

D. Lenstra, B. H. Verbeek, and A. J. Den Boef, “Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback,” IEEE J. Quantum Electron. 21, 674–679 (1985).
[Crossref]

1983 (1)

C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor of semiconductor lasers,” Appl. Phys. Lett. 42, 328–330 (1983).
[Crossref]

1981 (1)

A. Olsson and C. L. Tang, “Coherent optical interference effects in external cavity semiconductor lasers,” IEEE J. Quantum Electron. 17, 1320–1323 (1981).
[Crossref]

1973 (1)

B. W. Hakki and T. L. Paoli, “CW degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain,” J. Appl. Phys. 44, 4113–4119 (1973).
[Crossref]

Accard, A.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Alferov, Zh. I.

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 196–205 (1997).
[Crossref]

Azouigui, S.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Bimberg, D.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 196–205 (1997).
[Crossref]

Boef, A. J. Den

D. Lenstra, B. H. Verbeek, and A. J. Den Boef, “Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback,” IEEE J. Quantum Electron. 21, 674–679 (1985).
[Crossref]

Bossert, D. J.

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. 11, 1527–1529 (1999).
[Crossref]

Brenot, R.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

Bruyn, B. de

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, “Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback,” Europhys. Lett. 40, 619–624 (1997).
[Crossref]

Carroll, O.

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, “Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers,” Electron. Lett. 41, 911–912 (2005).
[Crossref]

Chraplyvy, A. R.

R.W. Tkach and A. R. Chraplyvy, “Regimes of Feedback Effects in 1.5-μm Distributed Feedback Lasers,” IEEE J. Lightwave Technol. 4, 1655–1661 (1986).
[Crossref]

Christiansen, P. L.

J. Mork, B. Tromborg, and P. L. Christiansen, “Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis,” IEEE J. Quantum Electron. 24, 123–133 (1988).
[Crossref]

Cong, D.-Y.

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Corbett, B.

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, “Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers,” Electron. Lett. 41, 911–912 (2005).
[Crossref]

Dagens, B.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Derouin, E.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

Dijk, F. van

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

Drisse, O.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

Duan, G-H.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

Forchel, A.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Long-wavelength InP-based quantum-dash lasers,” IEEE Photon. Technol. 14, 735–737 (2002).
[Crossref]

Fuchs, B.

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. 11, 1527–1529 (1999).
[Crossref]

Giudici, M.

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, “Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback,” Europhys. Lett. 40, 619–624 (1997).
[Crossref]

Gold, D.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Long-wavelength InP-based quantum-dash lasers,” IEEE Photon. Technol. 14, 735–737 (2002).
[Crossref]

Gouezigou, O. Le

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

Gray, A. L.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, “High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE Photon. Technol. Lett. 15, 1504–1506 (2003).
[Crossref]

Grillot, F.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

Hakki, B. W.

B. W. Hakki and T. L. Paoli, “CW degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain,” J. Appl. Phys. 44, 4113–4119 (1973).
[Crossref]

Harder, C.

C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor of semiconductor lasers,” Appl. Phys. Lett. 42, 328–330 (1983).
[Crossref]

Hegarty, S. P.

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, “Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers,” Electron. Lett. 41, 911–912 (2005).
[Crossref]

D. O’Brien, S. P. Hegarty, G. Huyet, and A. V. Uskov, “Sensitivity of quantum-dot semiconductor lasers to optical feedback,” Opt. Lett. 29, 1072–1074 (2004).
[Crossref] [PubMed]

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, “Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback,” Europhys. Lett. 40, 619–624 (1997).
[Crossref]

Huyet, G.

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, “Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers,” Electron. Lett. 41, 911–912 (2005).
[Crossref]

D. O’Brien, S. P. Hegarty, G. Huyet, and A. V. Uskov, “Sensitivity of quantum-dot semiconductor lasers to optical feedback,” Opt. Lett. 29, 1072–1074 (2004).
[Crossref] [PubMed]

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, “Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback,” Europhys. Lett. 40, 619–624 (1997).
[Crossref]

Kettler, T.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

Kirstaedter, N.

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 196–205 (1997).
[Crossref]

Kop’ev, P. S.

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 196–205 (1997).
[Crossref]

Kovsh, A. R.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

Laemmlin, M.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

Landreau, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

Ledentsov, N. N.

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 196–205 (1997).
[Crossref]

Lelarge, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Lenstra, D.

D. Lenstra, B. H. Verbeek, and A. J. Den Boef, “Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback,” IEEE J. Quantum Electron. 21, 674–679 (1985).
[Crossref]

Lester, L. F.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, “High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE Photon. Technol. Lett. 15, 1504–1506 (2003).
[Crossref]

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. 13, 767–769 (2001).
[Crossref]

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. 11, 1527–1529 (1999).
[Crossref]

Li, H.

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. 13, 767–769 (2001).
[Crossref]

J. Ye, H. Li, and J. G. McInerney, “Period-doubling route to chaos in a semiconductor laser with weak optical feedback,” Phys. Rev. A 47, 2249–2252 (1993).
[Crossref] [PubMed]

Make, D.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

Malloy, K.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, “High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE Photon. Technol. Lett. 15, 1504–1506 (2003).
[Crossref]

Malloy, K. J.

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. 13, 767–769 (2001).
[Crossref]

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. 11, 1527–1529 (1999).
[Crossref]

Martinez, A.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

McInerney, J. G.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, “Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback,” Europhys. Lett. 40, 619–624 (1997).
[Crossref]

J. Ye, H. Li, and J. G. McInerney, “Period-doubling route to chaos in a semiconductor laser with weak optical feedback,” Phys. Rev. A 47, 2249–2252 (1993).
[Crossref] [PubMed]

Merghem, K.

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Mikhrin, S. S.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

Moreau, G.

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Mork, J.

J. Mork, B. Tromborg, and P. L. Christiansen, “Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis,” IEEE J. Quantum Electron. 24, 123–133 (1988).
[Crossref]

Newell, T. C.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, “High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE Photon. Technol. Lett. 15, 1504–1506 (2003).
[Crossref]

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. 13, 767–769 (2001).
[Crossref]

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. 11, 1527–1529 (1999).
[Crossref]

O’Brien, D.

D. O’Brien, S. P. Hegarty, G. Huyet, and A. V. Uskov, “Sensitivity of quantum-dot semiconductor lasers to optical feedback,” Opt. Lett. 29, 1072–1074 (2004).
[Crossref] [PubMed]

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

Olsson, A.

A. Olsson and C. L. Tang, “Coherent optical interference effects in external cavity semiconductor lasers,” IEEE J. Quantum Electron. 17, 1320–1323 (1981).
[Crossref]

Paoli, T. L.

B. W. Hakki and T. L. Paoli, “CW degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain,” J. Appl. Phys. 44, 4113–4119 (1973).
[Crossref]

Patriarche, G.

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Poingt, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Pommereau, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Provost, J. G.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

Provost, J-G.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

Ramdane, A.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Reithmaier, J. P.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Long-wavelength InP-based quantum-dash lasers,” IEEE Photon. Technol. 14, 735–737 (2002).
[Crossref]

Renaudier, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

Rousseau, B.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

Schwertberger, R.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Long-wavelength InP-based quantum-dash lasers,” IEEE Photon. Technol. 14, 735–737 (2002).
[Crossref]

Stintz, A.

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. 13, 767–769 (2001).
[Crossref]

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. 11, 1527–1529 (1999).
[Crossref]

Su, H.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, “High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE Photon. Technol. Lett. 15, 1504–1506 (2003).
[Crossref]

Tang, C. L.

A. Olsson and C. L. Tang, “Coherent optical interference effects in external cavity semiconductor lasers,” IEEE J. Quantum Electron. 17, 1320–1323 (1981).
[Crossref]

Tkach, R.W.

R.W. Tkach and A. R. Chraplyvy, “Regimes of Feedback Effects in 1.5-μm Distributed Feedback Lasers,” IEEE J. Lightwave Technol. 4, 1655–1661 (1986).
[Crossref]

Tromborg, B.

J. Mork, B. Tromborg, and P. L. Christiansen, “Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis,” IEEE J. Quantum Electron. 24, 123–133 (1988).
[Crossref]

Uskov, A. V.

Ustinov, V. M.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 196–205 (1997).
[Crossref]

Vahala, K.

C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor of semiconductor lasers,” Appl. Phys. Lett. 42, 328–330 (1983).
[Crossref]

Varangis, P. M.

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. 13, 767–769 (2001).
[Crossref]

Verbeek, B. H.

D. Lenstra, B. H. Verbeek, and A. J. Den Boef, “Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback,” IEEE J. Quantum Electron. 21, 674–679 (1985).
[Crossref]

Wang, R.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, “High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE Photon. Technol. Lett. 15, 1504–1506 (2003).
[Crossref]

Wang, R. H.

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. 13, 767–769 (2001).
[Crossref]

Yariv, A.

C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor of semiconductor lasers,” Appl. Phys. Lett. 42, 328–330 (1983).
[Crossref]

Ye, J.

J. Ye, H. Li, and J. G. McInerney, “Period-doubling route to chaos in a semiconductor laser with weak optical feedback,” Phys. Rev. A 47, 2249–2252 (1993).
[Crossref] [PubMed]

Zhang, L.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, “High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE Photon. Technol. Lett. 15, 1504–1506 (2003).
[Crossref]

Zhukov, A. E.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

Zou, Q.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

Appl. Phys. Lett. (2)

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, “Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μ m,” Appl. Phys. Lett. 89, 241123 (2006).
[Crossref]

C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor of semiconductor lasers,” Appl. Phys. Lett. 42, 328–330 (1983).
[Crossref]

Electron. Lett. (2)

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, “Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers,” Electron. Lett. 41, 911–912 (2005).
[Crossref]

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819–1820 (2003).
[Crossref]

Europhys. Lett. (1)

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, “Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback,” Europhys. Lett. 40, 619–624 (1997).
[Crossref]

IEEE J. Lightwave Technol. (1)

R.W. Tkach and A. R. Chraplyvy, “Regimes of Feedback Effects in 1.5-μm Distributed Feedback Lasers,” IEEE J. Lightwave Technol. 4, 1655–1661 (1986).
[Crossref]

IEEE J. Quantum Electron. (3)

D. Lenstra, B. H. Verbeek, and A. J. Den Boef, “Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback,” IEEE J. Quantum Electron. 21, 674–679 (1985).
[Crossref]

J. Mork, B. Tromborg, and P. L. Christiansen, “Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis,” IEEE J. Quantum Electron. 24, 123–133 (1988).
[Crossref]

A. Olsson and C. L. Tang, “Coherent optical interference effects in external cavity semiconductor lasers,” IEEE J. Quantum Electron. 17, 1320–1323 (1981).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G-H. Duan, “Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13, 111–124 (2007).
[Crossref]

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 3, 196–205 (1997).
[Crossref]

IEEE Photon. Technol. (4)

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. 11, 1527–1529 (1999).
[Crossref]

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. 13, 767–769 (2001).
[Crossref]

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Long-wavelength InP-based quantum-dash lasers,” IEEE Photon. Technol. 14, 735–737 (2002).
[Crossref]

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, “Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 μm,” IEEE Photon. Technol. 19, 1181–1183 (2007).
[Crossref]

IEEE Photon. Technol. Lett. (1)

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, “High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE Photon. Technol. Lett. 15, 1504–1506 (2003).
[Crossref]

J. Appl. Phys. (1)

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[Crossref]

Opt. Lett. (1)

Phys. Rev. A (1)

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[Crossref] [PubMed]

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Figures (8)

Fig. 1.
Fig. 1. Linewith enhancement factor (LEF) and damping factor versus current.

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Fig. 2.
Fig. 2. Experimental setup 1. The device under test was coupled using a lensed fibre to a 90/10 single-mode power splitter. The power meter was used to estimate the feedback level and the OSA was used to determine the onset of coherence collapse.

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Fig. 3.
Fig. 3. Experimental setup 2. The output from one facet of the device was focused by a high NA aspheric lens onto a broadband mirror. The output from the other facet was collimated through a free-space isolator and coupled to a single mode fibre isolator connected either to an OSA, an electrical spectrum analyser (ESA) or to a 6 GHz real-time oscilloscope. The OSA, ESA and oscilloscope were used to determine the onset of the CC and LFF regimes.

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Fig. 4.
Fig. 4. (a). Light-current characteristics. (b) Net gain versus current.

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Fig. 5.
Fig. 5. (a). Optical spectrum with increasing feedback. (b) RF spectrum with increasing feedback at 30 mA. (c) Time series in the CC regime.

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Fig. 6.
Fig. 6. Onset of coherence collapse (dB) versus emitted power determined at external cavity lengths of 0.3m, 0.9m, 1.5m (setup 2) and 18m (setup 1).

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Fig. 7.
Fig. 7. Time-series in the LFF regime at -1.2 dB feedback at 19 mA. The trace shown was obtained for an external cavity length of 0.5m.

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Fig. 8.
Fig. 8. RF spectrum in the LFF regime (at -1.2 dB feedback).

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Equations (5)

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γ = P 1 P o
r eff = r + ( 1 − r 2 ) ∙ r ext ∙ T ∙ ξ 1 + r ∙ r ext ∙ T
γ = r ext 2 T 2 ξ 2
r eff = 1 r ∙ e g ∙ L
Γ crit = γ crit − ( 2 ∙ C )

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