Abstract

In this paper, we analyzed slow single traps, situated inside the tunnel oxide of small area single electron photo-detector (photo-SET or nanopixel). The relationship between excitation signal (photons) and random-telegraph-signal (RTS) was evidenced. We demonstrated that photoinduced RTS observed on a photo-detector is due to the interaction between single photogenerated charges that tunnel from dot to dot and current path. Based on RTS analysis for various temperatures, gate bias and optical power we determined the characteristics of these single photogenerated traps: the energy position within the silicon bandgap, capture cross section and the position within the Si/SiOx = 1.5 interfaces.

©2010 Optical Society of America

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  1. G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
    [Crossref]
  2. A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
    [Crossref]
  3. H. Kosaka, D. S. Rao, H. D. Robinson, P. Bandaru, E. Yablonovitch, and K. Makita, “Single photoelectron trapping, storage, and detection in a field effect transistor,” Phys. Rev. B 67(4), 045104 (2003).
    [Crossref]
  4. A. Fujiwara, Y. Takahashi, and K. Murase, “Observation of Single Electron-Hole Recombination and Photon-Pumped Current in an Asymmetric Si Single-Electron Transistor,” Phys. Rev. Lett. 78(8), 1532–1535 (1997).
    [Crossref]
  5. P. G. Collins, M. S. Fuhrer, and A. Zettl, “1/f noise in carbon nanotubes,” Appl. Phys. Lett. 76(7), 894 (2000).
    [Crossref]
  6. D. Kingrey, and P. G. Collins, “Noise in Carbon Nanotube Electronics,” in Third SPIE Conference on Noise and Fluctuations (Austin, TX; SPIE, 2005).
  7. K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f) noise,” Phys. Rev. Lett. 52(3), 228–231 (1984).
    [Crossref]
  8. M. J. Kirton and M. J. Uren, “Noise in solid state microstructures: a new perspective on individual defects, interface states and low-frequency (1/f) noise,” Astropart. Phys. 38, 367 (1989).
  9. R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, “Current fluctuation in single-hole transport through a two-dimensional Si multidot,” Appl. Phys. Lett. 86(13), 133106 (2005).
    [Crossref]
  10. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “Random telegraph noise of deep-submicrometer MOSFETs,” IEEE Electron Device Lett. 11(2), 90–92 (1990).
    [Crossref]
  11. K. Kendiah, M. O. Deihjton, and F. B. Whiting, “Physical model for random telegraph signal currents in semiconductor devices,” J. Appl. Phys. 66(2), 937 (1989).
    [Crossref]
  12. O. Roux Dit Buisson, G. Ghibaudo, and J. Brini, “Model for drain current RTS amplitude in small-area MOS transistors,” Solid-State Electron. 35(9), 1273–1276 (1992).
    [Crossref]
  13. M. J. Uren, M. J. Kirton, and S. Collins, “Anomalous telegraph noise in small area silicon metal-oxide-semiconductor Field-effect transistors,” Phys. Rev. B 37(14), 8346–8350 (1988).
    [Crossref]
  14. M. Schulz and A. Karmann, “Individual attractive defect centers in the SiO2-Si interface of lm-sized MOSFETs,” Appl. Phys., A Mater. Sci. Process. 52(2), 104–111 (1991).
    [Crossref]
  15. L. K. J. Vandamme, D. Sodini, and Z. Gingl, “On the anomalous behavior of the relative amplitude of RTS noise,” Solid-State Electron. 42(6), 901–905 (1998).
    [Crossref]
  16. M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karman, and K. Scheffer, “Individual defects at the Si:SiO2 interface,” Semicond. Sci. Technol. 4(12), 1116–1126 (1989).
    [Crossref]
  17. Z. Shi, J. P. Mieville, and M. Dutoit, “Random telegraph signals in deep submicron n-MOSFET's,” IEEE Trans. Electron. Dev. 41(7), 1161–1168 (1994).
    [Crossref]
  18. M. C. Hegg, M. P. Horning, and L. Y. Lin, “A nano-scale quantum dot photodetector by self- assembly,” Proc. SPIE 6003, 600308 (2005).
    [Crossref]
  19. M. Troudi, N. Sghaier, A. Kalboussi, and A. Souifi, “Concept of new photodetector based on single electron transistor for single charge detection,” Eur. Phys. J. Appl. Phys. 46(2), 20301 (2009).
    [Crossref]
  20. L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
    [Crossref]
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  22. M. Troudi, N. Sghaier, L. Eugène, A. Kalboussi, and A. Souifi, “I-V analysis on nc-Si based nanopixels for single photon detection applications”, in Proceedings of the 2nd International Meeting on Materials for Electronic Applications, (Hammamet, 2009) pp. 230.
  23. S. T. Hsu, “Bistable noise in P-N junctions,” Solid-State Electron. 14(6), 487–497 (1971).
    [Crossref]
  24. S. Ferraton, L. Militaru, A. Souifi, S. Monfray, and T. Skotnicki, “Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements,” Solid-State Electron. 52(1), 44–48 (2008).
    [Crossref]
  25. A. Neugroschell, C. T. Sah, and M. S. Carroll, “Random telegraphic signals in silicon bipolar junction transistors,” Appl. Phys. Lett. 66(21), 2879 (1995).
    [Crossref]
  26. H. Silva and S. Tiwari, “Random telegraph signal in nanoscale back-side charge trapping memories,” Appl. Phys. Lett. 88(10), 102105 (2006).
    [Crossref]
  27. Z. Celik-Butler, P. Vasina, and N. V. Amarasinghe, “A Method for Locating the Position of Oxide Traps Responsible for Random Telegraph Signals in Sub-micron MOSFETs,” IEEE Trans. Electron. Dev. 47(3), 646–648 (2000).
    [Crossref]
  28. P. Fantini, A. Calderoni, A. Sebastiani, and G. Ghidini, “On the RTS phenomenon and trap nature in Flash memory tunnel oxide,” Microelectron. Eng. 84(9-10), 1998–2001 (2007).
    [Crossref]

2009 (1)

M. Troudi, N. Sghaier, A. Kalboussi, and A. Souifi, “Concept of new photodetector based on single electron transistor for single charge detection,” Eur. Phys. J. Appl. Phys. 46(2), 20301 (2009).
[Crossref]

2008 (1)

S. Ferraton, L. Militaru, A. Souifi, S. Monfray, and T. Skotnicki, “Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements,” Solid-State Electron. 52(1), 44–48 (2008).
[Crossref]

2007 (1)

P. Fantini, A. Calderoni, A. Sebastiani, and G. Ghidini, “On the RTS phenomenon and trap nature in Flash memory tunnel oxide,” Microelectron. Eng. 84(9-10), 1998–2001 (2007).
[Crossref]

2006 (1)

H. Silva and S. Tiwari, “Random telegraph signal in nanoscale back-side charge trapping memories,” Appl. Phys. Lett. 88(10), 102105 (2006).
[Crossref]

2005 (2)

R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, “Current fluctuation in single-hole transport through a two-dimensional Si multidot,” Appl. Phys. Lett. 86(13), 133106 (2005).
[Crossref]

M. C. Hegg, M. P. Horning, and L. Y. Lin, “A nano-scale quantum dot photodetector by self- assembly,” Proc. SPIE 6003, 600308 (2005).
[Crossref]

2003 (1)

H. Kosaka, D. S. Rao, H. D. Robinson, P. Bandaru, E. Yablonovitch, and K. Makita, “Single photoelectron trapping, storage, and detection in a field effect transistor,” Phys. Rev. B 67(4), 045104 (2003).
[Crossref]

2001 (2)

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

2000 (2)

P. G. Collins, M. S. Fuhrer, and A. Zettl, “1/f noise in carbon nanotubes,” Appl. Phys. Lett. 76(7), 894 (2000).
[Crossref]

Z. Celik-Butler, P. Vasina, and N. V. Amarasinghe, “A Method for Locating the Position of Oxide Traps Responsible for Random Telegraph Signals in Sub-micron MOSFETs,” IEEE Trans. Electron. Dev. 47(3), 646–648 (2000).
[Crossref]

1998 (1)

L. K. J. Vandamme, D. Sodini, and Z. Gingl, “On the anomalous behavior of the relative amplitude of RTS noise,” Solid-State Electron. 42(6), 901–905 (1998).
[Crossref]

1997 (1)

A. Fujiwara, Y. Takahashi, and K. Murase, “Observation of Single Electron-Hole Recombination and Photon-Pumped Current in an Asymmetric Si Single-Electron Transistor,” Phys. Rev. Lett. 78(8), 1532–1535 (1997).
[Crossref]

1995 (1)

A. Neugroschell, C. T. Sah, and M. S. Carroll, “Random telegraphic signals in silicon bipolar junction transistors,” Appl. Phys. Lett. 66(21), 2879 (1995).
[Crossref]

1994 (2)

L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
[Crossref]

Z. Shi, J. P. Mieville, and M. Dutoit, “Random telegraph signals in deep submicron n-MOSFET's,” IEEE Trans. Electron. Dev. 41(7), 1161–1168 (1994).
[Crossref]

1992 (1)

O. Roux Dit Buisson, G. Ghibaudo, and J. Brini, “Model for drain current RTS amplitude in small-area MOS transistors,” Solid-State Electron. 35(9), 1273–1276 (1992).
[Crossref]

1991 (1)

M. Schulz and A. Karmann, “Individual attractive defect centers in the SiO2-Si interface of lm-sized MOSFETs,” Appl. Phys., A Mater. Sci. Process. 52(2), 104–111 (1991).
[Crossref]

1990 (1)

K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “Random telegraph noise of deep-submicrometer MOSFETs,” IEEE Electron Device Lett. 11(2), 90–92 (1990).
[Crossref]

1989 (3)

K. Kendiah, M. O. Deihjton, and F. B. Whiting, “Physical model for random telegraph signal currents in semiconductor devices,” J. Appl. Phys. 66(2), 937 (1989).
[Crossref]

M. J. Kirton and M. J. Uren, “Noise in solid state microstructures: a new perspective on individual defects, interface states and low-frequency (1/f) noise,” Astropart. Phys. 38, 367 (1989).

M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karman, and K. Scheffer, “Individual defects at the Si:SiO2 interface,” Semicond. Sci. Technol. 4(12), 1116–1126 (1989).
[Crossref]

1988 (1)

M. J. Uren, M. J. Kirton, and S. Collins, “Anomalous telegraph noise in small area silicon metal-oxide-semiconductor Field-effect transistors,” Phys. Rev. B 37(14), 8346–8350 (1988).
[Crossref]

1984 (1)

K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f) noise,” Phys. Rev. Lett. 52(3), 228–231 (1984).
[Crossref]

1971 (1)

S. T. Hsu, “Bistable noise in P-N junctions,” Solid-State Electron. 14(6), 487–497 (1971).
[Crossref]

Amarasinghe, N. V.

Z. Celik-Butler, P. Vasina, and N. V. Amarasinghe, “A Method for Locating the Position of Oxide Traps Responsible for Random Telegraph Signals in Sub-micron MOSFETs,” IEEE Trans. Electron. Dev. 47(3), 646–648 (2000).
[Crossref]

Bandaru, P.

H. Kosaka, D. S. Rao, H. D. Robinson, P. Bandaru, E. Yablonovitch, and K. Makita, “Single photoelectron trapping, storage, and detection in a field effect transistor,” Phys. Rev. B 67(4), 045104 (2003).
[Crossref]

Brini, J.

O. Roux Dit Buisson, G. Ghibaudo, and J. Brini, “Model for drain current RTS amplitude in small-area MOS transistors,” Solid-State Electron. 35(9), 1273–1276 (1992).
[Crossref]

Calderoni, A.

P. Fantini, A. Calderoni, A. Sebastiani, and G. Ghidini, “On the RTS phenomenon and trap nature in Flash memory tunnel oxide,” Microelectron. Eng. 84(9-10), 1998–2001 (2007).
[Crossref]

Carroll, M. S.

A. Neugroschell, C. T. Sah, and M. S. Carroll, “Random telegraphic signals in silicon bipolar junction transistors,” Appl. Phys. Lett. 66(21), 2879 (1995).
[Crossref]

Celik-Butler, Z.

Z. Celik-Butler, P. Vasina, and N. V. Amarasinghe, “A Method for Locating the Position of Oxide Traps Responsible for Random Telegraph Signals in Sub-micron MOSFETs,” IEEE Trans. Electron. Dev. 47(3), 646–648 (2000).
[Crossref]

Cheng, Y. C.

K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “Random telegraph noise of deep-submicrometer MOSFETs,” IEEE Electron Device Lett. 11(2), 90–92 (1990).
[Crossref]

Chulkova, G.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

Collins, P. G.

P. G. Collins, M. S. Fuhrer, and A. Zettl, “1/f noise in carbon nanotubes,” Appl. Phys. Lett. 76(7), 894 (2000).
[Crossref]

Collins, S.

M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karman, and K. Scheffer, “Individual defects at the Si:SiO2 interface,” Semicond. Sci. Technol. 4(12), 1116–1126 (1989).
[Crossref]

M. J. Uren, M. J. Kirton, and S. Collins, “Anomalous telegraph noise in small area silicon metal-oxide-semiconductor Field-effect transistors,” Phys. Rev. B 37(14), 8346–8350 (1988).
[Crossref]

Curson, N. J.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Deihjton, M. O.

K. Kendiah, M. O. Deihjton, and F. B. Whiting, “Physical model for random telegraph signal currents in semiconductor devices,” J. Appl. Phys. 66(2), 937 (1989).
[Crossref]

Dixon, D.

L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
[Crossref]

Dutoit, M.

Z. Shi, J. P. Mieville, and M. Dutoit, “Random telegraph signals in deep submicron n-MOSFET's,” IEEE Trans. Electron. Dev. 41(7), 1161–1168 (1994).
[Crossref]

Dzardanov, A.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

Epworth, R. W.

K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f) noise,” Phys. Rev. Lett. 52(3), 228–231 (1984).
[Crossref]

Fantini, P.

P. Fantini, A. Calderoni, A. Sebastiani, and G. Ghidini, “On the RTS phenomenon and trap nature in Flash memory tunnel oxide,” Microelectron. Eng. 84(9-10), 1998–2001 (2007).
[Crossref]

Farrer, I.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Ferraton, S.

S. Ferraton, L. Militaru, A. Souifi, S. Monfray, and T. Skotnicki, “Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements,” Solid-State Electron. 52(1), 44–48 (2008).
[Crossref]

Fetter, L. A.

K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f) noise,” Phys. Rev. Lett. 52(3), 228–231 (1984).
[Crossref]

Foxon, C. T.

L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
[Crossref]

Fuhrer, M. S.

P. G. Collins, M. S. Fuhrer, and A. Zettl, “1/f noise in carbon nanotubes,” Appl. Phys. Lett. 76(7), 894 (2000).
[Crossref]

Fujiwara, A.

A. Fujiwara, Y. Takahashi, and K. Murase, “Observation of Single Electron-Hole Recombination and Photon-Pumped Current in an Asymmetric Si Single-Electron Transistor,” Phys. Rev. Lett. 78(8), 1532–1535 (1997).
[Crossref]

Ghibaudo, G.

O. Roux Dit Buisson, G. Ghibaudo, and J. Brini, “Model for drain current RTS amplitude in small-area MOS transistors,” Solid-State Electron. 35(9), 1273–1276 (1992).
[Crossref]

Ghidini, G.

P. Fantini, A. Calderoni, A. Sebastiani, and G. Ghidini, “On the RTS phenomenon and trap nature in Flash memory tunnel oxide,” Microelectron. Eng. 84(9-10), 1998–2001 (2007).
[Crossref]

Gingl, Z.

L. K. J. Vandamme, D. Sodini, and Z. Gingl, “On the anomalous behavior of the relative amplitude of RTS noise,” Solid-State Electron. 42(6), 901–905 (1998).
[Crossref]

Gol’tsman, G. N.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

Hegg, M. C.

M. C. Hegg, M. P. Horning, and L. Y. Lin, “A nano-scale quantum dot photodetector by self- assembly,” Proc. SPIE 6003, 600308 (2005).
[Crossref]

Hogg, R. A.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Horning, M. P.

M. C. Hegg, M. P. Horning, and L. Y. Lin, “A nano-scale quantum dot photodetector by self- assembly,” Proc. SPIE 6003, 600308 (2005).
[Crossref]

Howard, R. E.

K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f) noise,” Phys. Rev. Lett. 52(3), 228–231 (1984).
[Crossref]

Hsu, S. T.

S. T. Hsu, “Bistable noise in P-N junctions,” Solid-State Electron. 14(6), 487–497 (1971).
[Crossref]

Hu, C.

K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “Random telegraph noise of deep-submicrometer MOSFETs,” IEEE Electron Device Lett. 11(2), 90–92 (1990).
[Crossref]

Hung, K. K.

K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “Random telegraph noise of deep-submicrometer MOSFETs,” IEEE Electron Device Lett. 11(2), 90–92 (1990).
[Crossref]

Ikeda, H.

R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, “Current fluctuation in single-hole transport through a two-dimensional Si multidot,” Appl. Phys. Lett. 86(13), 133106 (2005).
[Crossref]

Ishikawa, Y.

R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, “Current fluctuation in single-hole transport through a two-dimensional Si multidot,” Appl. Phys. Lett. 86(13), 133106 (2005).
[Crossref]

Jackel, L. D.

K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f) noise,” Phys. Rev. Lett. 52(3), 228–231 (1984).
[Crossref]

Jauhar, S.

L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
[Crossref]

Kalboussi, A.

M. Troudi, N. Sghaier, A. Kalboussi, and A. Souifi, “Concept of new photodetector based on single electron transistor for single charge detection,” Eur. Phys. J. Appl. Phys. 46(2), 20301 (2009).
[Crossref]

Karman, A.

M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karman, and K. Scheffer, “Individual defects at the Si:SiO2 interface,” Semicond. Sci. Technol. 4(12), 1116–1126 (1989).
[Crossref]

Karmann, A.

M. Schulz and A. Karmann, “Individual attractive defect centers in the SiO2-Si interface of lm-sized MOSFETs,” Appl. Phys., A Mater. Sci. Process. 52(2), 104–111 (1991).
[Crossref]

Kendiah, K.

K. Kendiah, M. O. Deihjton, and F. B. Whiting, “Physical model for random telegraph signal currents in semiconductor devices,” J. Appl. Phys. 66(2), 937 (1989).
[Crossref]

Kirton, M. J.

M. J. Kirton and M. J. Uren, “Noise in solid state microstructures: a new perspective on individual defects, interface states and low-frequency (1/f) noise,” Astropart. Phys. 38, 367 (1989).

M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karman, and K. Scheffer, “Individual defects at the Si:SiO2 interface,” Semicond. Sci. Technol. 4(12), 1116–1126 (1989).
[Crossref]

M. J. Uren, M. J. Kirton, and S. Collins, “Anomalous telegraph noise in small area silicon metal-oxide-semiconductor Field-effect transistors,” Phys. Rev. B 37(14), 8346–8350 (1988).
[Crossref]

Ko, P. K.

K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “Random telegraph noise of deep-submicrometer MOSFETs,” IEEE Electron Device Lett. 11(2), 90–92 (1990).
[Crossref]

Kosaka, H.

H. Kosaka, D. S. Rao, H. D. Robinson, P. Bandaru, E. Yablonovitch, and K. Makita, “Single photoelectron trapping, storage, and detection in a field effect transistor,” Phys. Rev. B 67(4), 045104 (2003).
[Crossref]

Kouwenhoven, L. P.

L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
[Crossref]

Leadbeater, M. L.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Lin, L. Y.

M. C. Hegg, M. P. Horning, and L. Y. Lin, “A nano-scale quantum dot photodetector by self- assembly,” Proc. SPIE 6003, 600308 (2005).
[Crossref]

Lipatov, A.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

Makita, K.

H. Kosaka, D. S. Rao, H. D. Robinson, P. Bandaru, E. Yablonovitch, and K. Makita, “Single photoelectron trapping, storage, and detection in a field effect transistor,” Phys. Rev. B 67(4), 045104 (2003).
[Crossref]

McCormick, K.

L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
[Crossref]

McEuen, P. L.

L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
[Crossref]

Mieville, J. P.

Z. Shi, J. P. Mieville, and M. Dutoit, “Random telegraph signals in deep submicron n-MOSFET's,” IEEE Trans. Electron. Dev. 41(7), 1161–1168 (1994).
[Crossref]

Militaru, L.

S. Ferraton, L. Militaru, A. Souifi, S. Monfray, and T. Skotnicki, “Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements,” Solid-State Electron. 52(1), 44–48 (2008).
[Crossref]

Monfray, S.

S. Ferraton, L. Militaru, A. Souifi, S. Monfray, and T. Skotnicki, “Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements,” Solid-State Electron. 52(1), 44–48 (2008).
[Crossref]

Murase, K.

A. Fujiwara, Y. Takahashi, and K. Murase, “Observation of Single Electron-Hole Recombination and Photon-Pumped Current in an Asymmetric Si Single-Electron Transistor,” Phys. Rev. Lett. 78(8), 1532–1535 (1997).
[Crossref]

Nazarov, Yu. V.

L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
[Crossref]

Neugroschell, A.

A. Neugroschell, C. T. Sah, and M. S. Carroll, “Random telegraphic signals in silicon bipolar junction transistors,” Appl. Phys. Lett. 66(21), 2879 (1995).
[Crossref]

Norman, C. E.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Nuryadi, R.

R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, “Current fluctuation in single-hole transport through a two-dimensional Si multidot,” Appl. Phys. Lett. 86(13), 133106 (2005).
[Crossref]

O’Sullivan, M. P.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Okunev, O.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

Patel, N. K.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Pepper, M.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Ralls, K. S.

K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f) noise,” Phys. Rev. Lett. 52(3), 228–231 (1984).
[Crossref]

Rao, D. S.

H. Kosaka, D. S. Rao, H. D. Robinson, P. Bandaru, E. Yablonovitch, and K. Makita, “Single photoelectron trapping, storage, and detection in a field effect transistor,” Phys. Rev. B 67(4), 045104 (2003).
[Crossref]

Ritchie, D. A.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Robinson, H. D.

H. Kosaka, D. S. Rao, H. D. Robinson, P. Bandaru, E. Yablonovitch, and K. Makita, “Single photoelectron trapping, storage, and detection in a field effect transistor,” Phys. Rev. B 67(4), 045104 (2003).
[Crossref]

Roux Dit Buisson, O.

O. Roux Dit Buisson, G. Ghibaudo, and J. Brini, “Model for drain current RTS amplitude in small-area MOS transistors,” Solid-State Electron. 35(9), 1273–1276 (1992).
[Crossref]

Sah, C. T.

A. Neugroschell, C. T. Sah, and M. S. Carroll, “Random telegraphic signals in silicon bipolar junction transistors,” Appl. Phys. Lett. 66(21), 2879 (1995).
[Crossref]

Scheffer, K.

M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karman, and K. Scheffer, “Individual defects at the Si:SiO2 interface,” Semicond. Sci. Technol. 4(12), 1116–1126 (1989).
[Crossref]

Schulz, M.

M. Schulz and A. Karmann, “Individual attractive defect centers in the SiO2-Si interface of lm-sized MOSFETs,” Appl. Phys., A Mater. Sci. Process. 52(2), 104–111 (1991).
[Crossref]

M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karman, and K. Scheffer, “Individual defects at the Si:SiO2 interface,” Semicond. Sci. Technol. 4(12), 1116–1126 (1989).
[Crossref]

Sebastiani, A.

P. Fantini, A. Calderoni, A. Sebastiani, and G. Ghidini, “On the RTS phenomenon and trap nature in Flash memory tunnel oxide,” Microelectron. Eng. 84(9-10), 1998–2001 (2007).
[Crossref]

Semenov, A.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

Sghaier, N.

M. Troudi, N. Sghaier, A. Kalboussi, and A. Souifi, “Concept of new photodetector based on single electron transistor for single charge detection,” Eur. Phys. J. Appl. Phys. 46(2), 20301 (2009).
[Crossref]

Shi, Z.

Z. Shi, J. P. Mieville, and M. Dutoit, “Random telegraph signals in deep submicron n-MOSFET's,” IEEE Trans. Electron. Dev. 41(7), 1161–1168 (1994).
[Crossref]

Shields, A. J.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Silva, H.

H. Silva and S. Tiwari, “Random telegraph signal in nanoscale back-side charge trapping memories,” Appl. Phys. Lett. 88(10), 102105 (2006).
[Crossref]

Skocpol, W. J.

K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f) noise,” Phys. Rev. Lett. 52(3), 228–231 (1984).
[Crossref]

Skotnicki, T.

S. Ferraton, L. Militaru, A. Souifi, S. Monfray, and T. Skotnicki, “Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements,” Solid-State Electron. 52(1), 44–48 (2008).
[Crossref]

Smirnov, K.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

Sobolewski, R.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

Sodini, D.

L. K. J. Vandamme, D. Sodini, and Z. Gingl, “On the anomalous behavior of the relative amplitude of RTS noise,” Solid-State Electron. 42(6), 901–905 (1998).
[Crossref]

Souifi, A.

M. Troudi, N. Sghaier, A. Kalboussi, and A. Souifi, “Concept of new photodetector based on single electron transistor for single charge detection,” Eur. Phys. J. Appl. Phys. 46(2), 20301 (2009).
[Crossref]

S. Ferraton, L. Militaru, A. Souifi, S. Monfray, and T. Skotnicki, “Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements,” Solid-State Electron. 52(1), 44–48 (2008).
[Crossref]

Tabe, M.

R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, “Current fluctuation in single-hole transport through a two-dimensional Si multidot,” Appl. Phys. Lett. 86(13), 133106 (2005).
[Crossref]

Takahashi, Y.

A. Fujiwara, Y. Takahashi, and K. Murase, “Observation of Single Electron-Hole Recombination and Photon-Pumped Current in an Asymmetric Si Single-Electron Transistor,” Phys. Rev. Lett. 78(8), 1532–1535 (1997).
[Crossref]

Tennant, D. M.

K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f) noise,” Phys. Rev. Lett. 52(3), 228–231 (1984).
[Crossref]

Tiwari, S.

H. Silva and S. Tiwari, “Random telegraph signal in nanoscale back-side charge trapping memories,” Appl. Phys. Lett. 88(10), 102105 (2006).
[Crossref]

Troudi, M.

M. Troudi, N. Sghaier, A. Kalboussi, and A. Souifi, “Concept of new photodetector based on single electron transistor for single charge detection,” Eur. Phys. J. Appl. Phys. 46(2), 20301 (2009).
[Crossref]

Uren, M. J.

M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karman, and K. Scheffer, “Individual defects at the Si:SiO2 interface,” Semicond. Sci. Technol. 4(12), 1116–1126 (1989).
[Crossref]

M. J. Kirton and M. J. Uren, “Noise in solid state microstructures: a new perspective on individual defects, interface states and low-frequency (1/f) noise,” Astropart. Phys. 38, 367 (1989).

M. J. Uren, M. J. Kirton, and S. Collins, “Anomalous telegraph noise in small area silicon metal-oxide-semiconductor Field-effect transistors,” Phys. Rev. B 37(14), 8346–8350 (1988).
[Crossref]

van der Vaart, N. C.

L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
[Crossref]

Vandamme, L. K. J.

L. K. J. Vandamme, D. Sodini, and Z. Gingl, “On the anomalous behavior of the relative amplitude of RTS noise,” Solid-State Electron. 42(6), 901–905 (1998).
[Crossref]

Vasina, P.

Z. Celik-Butler, P. Vasina, and N. V. Amarasinghe, “A Method for Locating the Position of Oxide Traps Responsible for Random Telegraph Signals in Sub-micron MOSFETs,” IEEE Trans. Electron. Dev. 47(3), 646–648 (2000).
[Crossref]

Voronov, B.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

Whiting, F. B.

K. Kendiah, M. O. Deihjton, and F. B. Whiting, “Physical model for random telegraph signal currents in semiconductor devices,” J. Appl. Phys. 66(2), 937 (1989).
[Crossref]

Williams, C.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

Yablonovitch, E.

H. Kosaka, D. S. Rao, H. D. Robinson, P. Bandaru, E. Yablonovitch, and K. Makita, “Single photoelectron trapping, storage, and detection in a field effect transistor,” Phys. Rev. B 67(4), 045104 (2003).
[Crossref]

Zettl, A.

P. G. Collins, M. S. Fuhrer, and A. Zettl, “1/f noise in carbon nanotubes,” Appl. Phys. Lett. 76(7), 894 (2000).
[Crossref]

Appl. Phys. Lett. (5)

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, “Picosecond superconducting single photon optical detector,” Appl. Phys. Lett. 79(6), 705 (2001).
[Crossref]

P. G. Collins, M. S. Fuhrer, and A. Zettl, “1/f noise in carbon nanotubes,” Appl. Phys. Lett. 76(7), 894 (2000).
[Crossref]

R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, “Current fluctuation in single-hole transport through a two-dimensional Si multidot,” Appl. Phys. Lett. 86(13), 133106 (2005).
[Crossref]

A. Neugroschell, C. T. Sah, and M. S. Carroll, “Random telegraphic signals in silicon bipolar junction transistors,” Appl. Phys. Lett. 66(21), 2879 (1995).
[Crossref]

H. Silva and S. Tiwari, “Random telegraph signal in nanoscale back-side charge trapping memories,” Appl. Phys. Lett. 88(10), 102105 (2006).
[Crossref]

Appl. Phys., A Mater. Sci. Process. (1)

M. Schulz and A. Karmann, “Individual attractive defect centers in the SiO2-Si interface of lm-sized MOSFETs,” Appl. Phys., A Mater. Sci. Process. 52(2), 104–111 (1991).
[Crossref]

Astropart. Phys. (1)

M. J. Kirton and M. J. Uren, “Noise in solid state microstructures: a new perspective on individual defects, interface states and low-frequency (1/f) noise,” Astropart. Phys. 38, 367 (1989).

Eur. Phys. J. Appl. Phys. (1)

M. Troudi, N. Sghaier, A. Kalboussi, and A. Souifi, “Concept of new photodetector based on single electron transistor for single charge detection,” Eur. Phys. J. Appl. Phys. 46(2), 20301 (2009).
[Crossref]

IEEE Electron Device Lett. (1)

K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “Random telegraph noise of deep-submicrometer MOSFETs,” IEEE Electron Device Lett. 11(2), 90–92 (1990).
[Crossref]

IEEE Trans. Electron. Dev. (2)

Z. Shi, J. P. Mieville, and M. Dutoit, “Random telegraph signals in deep submicron n-MOSFET's,” IEEE Trans. Electron. Dev. 41(7), 1161–1168 (1994).
[Crossref]

Z. Celik-Butler, P. Vasina, and N. V. Amarasinghe, “A Method for Locating the Position of Oxide Traps Responsible for Random Telegraph Signals in Sub-micron MOSFETs,” IEEE Trans. Electron. Dev. 47(3), 646–648 (2000).
[Crossref]

J. Appl. Phys. (1)

K. Kendiah, M. O. Deihjton, and F. B. Whiting, “Physical model for random telegraph signal currents in semiconductor devices,” J. Appl. Phys. 66(2), 937 (1989).
[Crossref]

Jpn. J. Appl. Phys. (1)

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, M. L. Leadbeater, N. K. Patel, R. A. Hogg, C. E. Norman, N. J. Curson, and M. Pepper, “Single Photon Detection with a Quantum Dot Transistor,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 2058–2064 (2001).
[Crossref]

Microelectron. Eng. (1)

P. Fantini, A. Calderoni, A. Sebastiani, and G. Ghidini, “On the RTS phenomenon and trap nature in Flash memory tunnel oxide,” Microelectron. Eng. 84(9-10), 1998–2001 (2007).
[Crossref]

Phys. Rev. B (3)

L. P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P. L. McEuen, Yu. V. Nazarov, N. C. van der Vaart, and C. T. Foxon, “Photon-assisted tunneling through a quantum dot,” Phys. Rev. B 50(3), 2019–2022 (1994).
[Crossref]

H. Kosaka, D. S. Rao, H. D. Robinson, P. Bandaru, E. Yablonovitch, and K. Makita, “Single photoelectron trapping, storage, and detection in a field effect transistor,” Phys. Rev. B 67(4), 045104 (2003).
[Crossref]

M. J. Uren, M. J. Kirton, and S. Collins, “Anomalous telegraph noise in small area silicon metal-oxide-semiconductor Field-effect transistors,” Phys. Rev. B 37(14), 8346–8350 (1988).
[Crossref]

Phys. Rev. Lett. (2)

A. Fujiwara, Y. Takahashi, and K. Murase, “Observation of Single Electron-Hole Recombination and Photon-Pumped Current in an Asymmetric Si Single-Electron Transistor,” Phys. Rev. Lett. 78(8), 1532–1535 (1997).
[Crossref]

K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f) noise,” Phys. Rev. Lett. 52(3), 228–231 (1984).
[Crossref]

Proc. SPIE (1)

M. C. Hegg, M. P. Horning, and L. Y. Lin, “A nano-scale quantum dot photodetector by self- assembly,” Proc. SPIE 6003, 600308 (2005).
[Crossref]

Semicond. Sci. Technol. (1)

M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karman, and K. Scheffer, “Individual defects at the Si:SiO2 interface,” Semicond. Sci. Technol. 4(12), 1116–1126 (1989).
[Crossref]

Solid-State Electron. (4)

L. K. J. Vandamme, D. Sodini, and Z. Gingl, “On the anomalous behavior of the relative amplitude of RTS noise,” Solid-State Electron. 42(6), 901–905 (1998).
[Crossref]

O. Roux Dit Buisson, G. Ghibaudo, and J. Brini, “Model for drain current RTS amplitude in small-area MOS transistors,” Solid-State Electron. 35(9), 1273–1276 (1992).
[Crossref]

S. T. Hsu, “Bistable noise in P-N junctions,” Solid-State Electron. 14(6), 487–497 (1971).
[Crossref]

S. Ferraton, L. Militaru, A. Souifi, S. Monfray, and T. Skotnicki, “Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements,” Solid-State Electron. 52(1), 44–48 (2008).
[Crossref]

Other (3)

P. J. McWorther, “1/f noise and Germanium surface properties,” in Semicond. Surf. Phys, R. H. Kingston, ed., (University of Pennsylvania Press, 1957) pp. 207.

M. Troudi, N. Sghaier, L. Eugène, A. Kalboussi, and A. Souifi, “I-V analysis on nc-Si based nanopixels for single photon detection applications”, in Proceedings of the 2nd International Meeting on Materials for Electronic Applications, (Hammamet, 2009) pp. 230.

D. Kingrey, and P. G. Collins, “Noise in Carbon Nanotube Electronics,” in Third SPIE Conference on Noise and Fluctuations (Austin, TX; SPIE, 2005).

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Figures (7)

Fig. 1
Fig. 1 Schematic stack of a nanopixel (photo-SET)
Fig. 2
Fig. 2 Id-Vg current with Vds = 3.4 Volts measured at 300 K showing the presence of RTS fluctuations.
Fig. 3
Fig. 3 Analysis of the random telegraph signal: (a) The measured random telegraph signal data for T = 300K. (b) An algorithm for detection of abrupt changes is applied to the measured RTS signal to obtain the two RTS levels. (c) A histogram of the time-domain data. Peaks represent the state charge of the trap.
Fig. 4
Fig. 4 (a) Random telegraph signals in small nanopixels with 5 nm SiOx = 1.5 at the indicated gate voltages. (b) Variation of the Vgs dependence of the capture <τ+> and emission <τ-> mean times.
Fig. 5
Fig. 5 (a) Time dependence of Id for Vds = 3.4 Volts in the dark condition and under light illumination with a wavelength λ of 630 nm for different light intensities Popt for sample with a 5 nm SiOx = 1.5. (b) Variations of the capture and emission times with Popt .
Fig. 6
Fig. 6 Temperature dependence of Id for Vds = 3.4 Volts: (a) In the dark condition, (b) under light illumination with a wavelength λ of 630 nm and for a light intensities Popt = 70µW.
Fig. 7
Fig. 7 Thermal activation of (a) emission and (b) capture mean times for RTS1,D, RTS2,L and RTS3,L noises. Arrhenius plots allow us to determine that the activation energies and the capture cross sections of the traps are responsible of these noises.

Tables (1)

Tables Icon

Table 1 Thermal activation results from the emission and capture mean times giving the activation energies and cross capture sections of traps responsible to RTS noise: trap 1 was associated to (RTS1,D) noise observed in dark conditions, whereas trap 2 and 3 were associated respectively with (RTS2,L and RTS3,L) noise observed under illumination.

Equations (4)

Equations on this page are rendered with MathJax. Learn more.

τ + τ = g exp ( E T E F k T ) ,
I d = R d P o p t = P o p t η q / h ν = P o p t η λ ( µ m ) / 1.24
E T = E T i q x T t o x ( V g V F B Ψ s ) ,
ln ( τ + τ ) V g = q x T k T t o x q k T ( 1 x T t o x ) Ψ s V g q k T x T t o x

Metrics