Abstract

We have fabricated 630 × 500nm nanowires from Ge11.5As24Se64.5 chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6dB/cm for the fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136 ± 7W−1m−1 at 1550nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18mm long nanowire pumped by 1ps pulses with peak power of 25W.

©2010 Optical Society of America

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    [Crossref]
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  32. K. Ogusu, J. Yamasaki, S. Maeda, M. Kitao, and M. Minakata, “Linear and nonlinear optical properties of Ag-As-Se chalcogenide glasses for all-optical switching,” Opt. Lett. 29(3), 265–267 (2004).
    [Crossref] [PubMed]
  33. D. I. Yeom, E. C. Mägi, M. R. E. Lamont, M. A. F. Roelens, L. Fu, and B. J. Eggleton, “Low-threshold supercontinuum generation in highly nonlinear chalcogenide nanowires,” Opt. Lett. 33(7), 660–662 (2008).
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2010 (3)

2009 (7)

M. Galili, J. Xu, H. C. H. Mulvad, L. K. Oxenløwe, A. T. Clausen, P. Jeppesen, B. Luther-Davis, S. Madden, A. Rode, D. Y. Choi, M. Pelusi, F. Luan, and B. J. Eggleton, “Breakthrough switching speed with an all-optical chalcogenide glass chip: 640 Gbit/s demultiplexing,” Opt. Express 17(4), 2182–2187 (2009).
[Crossref] [PubMed]

M. Pelusi, F. Luan, T. D. Vo, M. R. E. Lamont, S. J. Madden, D. A. Bulla, D. Y. Choi, B. Luther-Davies, and B. J. Eggleton, “Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth,” Nat. Photonics 3(3), 139–143 (2009).
[Crossref]

M. D. Pelusi, T. D. Vo, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Terahertz bandwidth RF spectrum analysis of femtosecond pulses using a chalcogenide chip,” Opt. Express 17(11), 9314–9322 (2009).
[Crossref] [PubMed]

F. Luan, M. D. Pelusi, M. R. E. Lamont, D. Y. Choi, S. Madden, B. Luther-Davies, and B. J. Eggleton, “Dispersion engineered As(2)S(3) planar waveguides for broadband four-wave mixing based wavelength conversion of 40 Gb/s signals,” Opt. Express 17(5), 3514–3520 (2009).
[Crossref] [PubMed]

B. G. Lee, A. Biberman, A. C. Turner-Foster, M. A. Foster, M. Lipson, A. L. Gaeta, and K. Bergman, “Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides,” IEEE Photon. Technol. Lett. 21(3), 182–184 (2009).
[Crossref]

D. A. P. Bulla, R. P. Wang, A. Prasad, A. V. Rode, S. J. Madden, and B. Luther-Davies, “On the properties and stability of thermally evaporated Ge-As-Se thin films,” Appl. Phys. (Berl.) 96(3), 615–625 (2009).

K. Suzuki, Y. Hamachi, and T. Baba, “Fabrication and characterization of chalcogenide glass photonic crystal waveguides,” Opt. Express 17(25), 22393–22400 (2009).
[Crossref]

2008 (6)

2007 (5)

2006 (3)

M. A. Foster, A. C. Turner, J. E. Sharping, B. S. Schmidt, M. Lipson, and A. L. Gaeta, “Broad-band optical parametric gain on a silicon photonic chip,” Nature 441(7096), 960–963 (2006).
[Crossref] [PubMed]

Y. H. Kuo, H. S. Rong, V. Sih, S. B. Xu, M. Paniccia, and O. Cohen, “Demonstration of wavelength conversion at 40 Gb/s data rate in silicon waveguides,” Opt. Express 14(24), 11721–11726 (2006).
[Crossref] [PubMed]

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

2004 (2)

J. T. Gopinath, M. Sojacic, E. P. Ippen, V. N. Fuflyingin, W. A. King, and M. Shurgailn, “Third Order Nonlinearities in Ge-As-Se-based Glasses for Telecommunications Applications,” J. Appl. Phys. 96(11), 6931–6933 (2004).
[Crossref]

K. Ogusu, J. Yamasaki, S. Maeda, M. Kitao, and M. Minakata, “Linear and nonlinear optical properties of Ag-As-Se chalcogenide glasses for all-optical switching,” Opt. Lett. 29(3), 265–267 (2004).
[Crossref] [PubMed]

2002 (1)

2001 (2)

C. Quemard, F. Smektala, V. Couderc, A. Barthelemy, and J. Lucas, “Chalcogenide Glasses with High Nonlinear Optical Properties for Telecommunications,” J. Phys. Chem. Solids 62(8), 1435–1440 (2001).
[Crossref]

P. Boolchand, D. G. Georgiev, and B. Goodman, “Discovery of the Intermediate Phase in Chalcogenide Glasses,” J. Optoelectron. Adv. Mater. 3, 703–720 (2001).

1994 (1)

P. Lusse, P. Stuwe, J. Schule, and H.-G. Unger, “Analysis of Vectorial Mode Fields in Optical Waveguides by a New Finite Difference Method,” J. Lightwave Technol. 12(3), 487–494 (1994).
[Crossref]

1989 (1)

K. Tanaka, “Structural phase transitions in chalcogenide glasses,” Phys. Rev. B Condens. Matter 39(2), 1270–1279 (1989).
[Crossref] [PubMed]

1979 (1)

J. C. Phillips, “Topology of covalent non-crystalline solids I: Short-range order in chalcogenide alloys,” J. Non-Cryst. Solids 34(2), 153–181 (1979).
[Crossref]

1970 (1)

C. C. Wang, “Empirical Relation Between the Linear and the Third Order Nonlinear Optical Susceptibilities,” Phys. Rev. B 2(6), 2045–2048 (1970).
[Crossref]

Aggarwal, I. D.

Agrawal, G. P.

Ayotte, S.

Baba, T.

Barthelemy, A.

C. Quemard, F. Smektala, V. Couderc, A. Barthelemy, and J. Lucas, “Chalcogenide Glasses with High Nonlinear Optical Properties for Telecommunications,” J. Phys. Chem. Solids 62(8), 1435–1440 (2001).
[Crossref]

Bergman, K.

B. G. Lee, A. Biberman, A. C. Turner-Foster, M. A. Foster, M. Lipson, A. L. Gaeta, and K. Bergman, “Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides,” IEEE Photon. Technol. Lett. 21(3), 182–184 (2009).
[Crossref]

Biberman, A.

B. G. Lee, A. Biberman, A. C. Turner-Foster, M. A. Foster, M. Lipson, A. L. Gaeta, and K. Bergman, “Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides,” IEEE Photon. Technol. Lett. 21(3), 182–184 (2009).
[Crossref]

Boolchand, P.

P. Boolchand, D. G. Georgiev, and B. Goodman, “Discovery of the Intermediate Phase in Chalcogenide Glasses,” J. Optoelectron. Adv. Mater. 3, 703–720 (2001).

Bulla, D. A.

M. D. Pelusi, F. Luan, S. Madden, D. Y. Choi, D. A. Bulla, B. Luther-Davies, and B. J. Eggleton, “Wavelength Conversion of High-Speed Phase and Intensity Modulated Signals Using a Highly Nonlinear Chalcogenide Glass Chip,” IEEE Photon. Technol. Lett. 22(1), 3–5 (2010).
[Crossref]

M. Pelusi, F. Luan, T. D. Vo, M. R. E. Lamont, S. J. Madden, D. A. Bulla, D. Y. Choi, B. Luther-Davies, and B. J. Eggleton, “Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth,” Nat. Photonics 3(3), 139–143 (2009).
[Crossref]

Bulla, D. A. P.

T. D. Vo, M. D. Pelusi, J. Schröder, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Simultaneous multi-impairment monitoring of 640 Gb/s signals using photonic chip based RF spectrum analyzer,” Opt. Express 18(4), 3938–3945 (2010).
[Crossref] [PubMed]

M. D. Pelusi, T. D. Vo, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Terahertz bandwidth RF spectrum analysis of femtosecond pulses using a chalcogenide chip,” Opt. Express 17(11), 9314–9322 (2009).
[Crossref] [PubMed]

D. A. P. Bulla, R. P. Wang, A. Prasad, A. V. Rode, S. J. Madden, and B. Luther-Davies, “On the properties and stability of thermally evaporated Ge-As-Se thin films,” Appl. Phys. (Berl.) 96(3), 615–625 (2009).

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

Choi, D. Y.

M. D. Pelusi, F. Luan, S. Madden, D. Y. Choi, D. A. Bulla, B. Luther-Davies, and B. J. Eggleton, “Wavelength Conversion of High-Speed Phase and Intensity Modulated Signals Using a Highly Nonlinear Chalcogenide Glass Chip,” IEEE Photon. Technol. Lett. 22(1), 3–5 (2010).
[Crossref]

T. D. Vo, M. D. Pelusi, J. Schröder, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Simultaneous multi-impairment monitoring of 640 Gb/s signals using photonic chip based RF spectrum analyzer,” Opt. Express 18(4), 3938–3945 (2010).
[Crossref] [PubMed]

M. D. Pelusi, T. D. Vo, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Terahertz bandwidth RF spectrum analysis of femtosecond pulses using a chalcogenide chip,” Opt. Express 17(11), 9314–9322 (2009).
[Crossref] [PubMed]

F. Luan, M. D. Pelusi, M. R. E. Lamont, D. Y. Choi, S. Madden, B. Luther-Davies, and B. J. Eggleton, “Dispersion engineered As(2)S(3) planar waveguides for broadband four-wave mixing based wavelength conversion of 40 Gb/s signals,” Opt. Express 17(5), 3514–3520 (2009).
[Crossref] [PubMed]

M. Galili, J. Xu, H. C. H. Mulvad, L. K. Oxenløwe, A. T. Clausen, P. Jeppesen, B. Luther-Davis, S. Madden, A. Rode, D. Y. Choi, M. Pelusi, F. Luan, and B. J. Eggleton, “Breakthrough switching speed with an all-optical chalcogenide glass chip: 640 Gbit/s demultiplexing,” Opt. Express 17(4), 2182–2187 (2009).
[Crossref] [PubMed]

M. Pelusi, F. Luan, T. D. Vo, M. R. E. Lamont, S. J. Madden, D. A. Bulla, D. Y. Choi, B. Luther-Davies, and B. J. Eggleton, “Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth,” Nat. Photonics 3(3), 139–143 (2009).
[Crossref]

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

M. R. E. Lamont, B. Luther-Davies, D. Y. Choi, S. Madden, X. Gai, and B. J. Eggleton, “Net-gain from a parametric amplifier on a chalcogenide optical chip,” Opt. Express 16(25), 20374–20381 (2008).
[Crossref] [PubMed]

Clausen, A. T.

Cohen, O.

Couderc, V.

C. Quemard, F. Smektala, V. Couderc, A. Barthelemy, and J. Lucas, “Chalcogenide Glasses with High Nonlinear Optical Properties for Telecommunications,” J. Phys. Chem. Solids 62(8), 1435–1440 (2001).
[Crossref]

Eggleton, B. J.

M. D. Pelusi, F. Luan, S. Madden, D. Y. Choi, D. A. Bulla, B. Luther-Davies, and B. J. Eggleton, “Wavelength Conversion of High-Speed Phase and Intensity Modulated Signals Using a Highly Nonlinear Chalcogenide Glass Chip,” IEEE Photon. Technol. Lett. 22(1), 3–5 (2010).
[Crossref]

T. D. Vo, M. D. Pelusi, J. Schröder, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Simultaneous multi-impairment monitoring of 640 Gb/s signals using photonic chip based RF spectrum analyzer,” Opt. Express 18(4), 3938–3945 (2010).
[Crossref] [PubMed]

M. Galili, J. Xu, H. C. H. Mulvad, L. K. Oxenløwe, A. T. Clausen, P. Jeppesen, B. Luther-Davis, S. Madden, A. Rode, D. Y. Choi, M. Pelusi, F. Luan, and B. J. Eggleton, “Breakthrough switching speed with an all-optical chalcogenide glass chip: 640 Gbit/s demultiplexing,” Opt. Express 17(4), 2182–2187 (2009).
[Crossref] [PubMed]

M. D. Pelusi, T. D. Vo, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Terahertz bandwidth RF spectrum analysis of femtosecond pulses using a chalcogenide chip,” Opt. Express 17(11), 9314–9322 (2009).
[Crossref] [PubMed]

F. Luan, M. D. Pelusi, M. R. E. Lamont, D. Y. Choi, S. Madden, B. Luther-Davies, and B. J. Eggleton, “Dispersion engineered As(2)S(3) planar waveguides for broadband four-wave mixing based wavelength conversion of 40 Gb/s signals,” Opt. Express 17(5), 3514–3520 (2009).
[Crossref] [PubMed]

M. Pelusi, F. Luan, T. D. Vo, M. R. E. Lamont, S. J. Madden, D. A. Bulla, D. Y. Choi, B. Luther-Davies, and B. J. Eggleton, “Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth,” Nat. Photonics 3(3), 139–143 (2009).
[Crossref]

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

M. R. E. Lamont, B. Luther-Davies, D. Y. Choi, S. Madden, X. Gai, and B. J. Eggleton, “Net-gain from a parametric amplifier on a chalcogenide optical chip,” Opt. Express 16(25), 20374–20381 (2008).
[Crossref] [PubMed]

D. I. Yeom, E. C. Mägi, M. R. E. Lamont, M. A. F. Roelens, L. Fu, and B. J. Eggleton, “Low-threshold supercontinuum generation in highly nonlinear chalcogenide nanowires,” Opt. Lett. 33(7), 660–662 (2008).
[Crossref] [PubMed]

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

Foster, M. A.

A. C. Turner-Foster, M. A. Foster, R. Salem, A. L. Gaeta, and M. Lipson, “Frequency conversion over two-thirds of an octave in silicon nanowaveguides,” Opt. Express 18(3), 1904–1908 (2010).
[Crossref] [PubMed]

B. G. Lee, A. Biberman, A. C. Turner-Foster, M. A. Foster, M. Lipson, A. L. Gaeta, and K. Bergman, “Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides,” IEEE Photon. Technol. Lett. 21(3), 182–184 (2009).
[Crossref]

R. Salem, M. A. Foster, A. C. Turner, D. F. Geraghty, M. Lipson, and A. L. Gaeta, “Signal regeneration using low-power four-wave mixing on silicon chip,” Nat. Photonics 2(1), 35–38 (2008).
[Crossref]

M. A. Foster, A. C. Turner, M. Lipson, and A. L. Gaeta, “Nonlinear optics in photonic nanowires,” Opt. Express 16(2), 1300–1320 (2008).
[Crossref] [PubMed]

M. A. Foster, A. C. Turner, R. Salem, M. Lipson, and A. L. Gaeta, “Broad-band continuous-wave parametric wavelength conversion in silicon nanowaveguides,” Opt. Express 15(20), 12949–12958 (2007).
[Crossref] [PubMed]

R. Salem, M. A. Foster, A. C. Turner, D. F. Geraghty, M. Lipson, and A. L. Gaeta, “All-optical regeneration on a silicon chip,” Opt. Express 15(12), 7802–7809 (2007).
[Crossref] [PubMed]

M. A. Foster, A. C. Turner, J. E. Sharping, B. S. Schmidt, M. Lipson, and A. L. Gaeta, “Broad-band optical parametric gain on a silicon photonic chip,” Nature 441(7096), 960–963 (2006).
[Crossref] [PubMed]

Freude, W.

Fu, L.

Fu, L. B.

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

Fuflyingin, V. N.

J. T. Gopinath, M. Sojacic, E. P. Ippen, V. N. Fuflyingin, W. A. King, and M. Shurgailn, “Third Order Nonlinearities in Ge-As-Se-based Glasses for Telecommunications Applications,” J. Appl. Phys. 96(11), 6931–6933 (2004).
[Crossref]

Gaeta, A. L.

A. C. Turner-Foster, M. A. Foster, R. Salem, A. L. Gaeta, and M. Lipson, “Frequency conversion over two-thirds of an octave in silicon nanowaveguides,” Opt. Express 18(3), 1904–1908 (2010).
[Crossref] [PubMed]

B. G. Lee, A. Biberman, A. C. Turner-Foster, M. A. Foster, M. Lipson, A. L. Gaeta, and K. Bergman, “Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides,” IEEE Photon. Technol. Lett. 21(3), 182–184 (2009).
[Crossref]

M. A. Foster, A. C. Turner, M. Lipson, and A. L. Gaeta, “Nonlinear optics in photonic nanowires,” Opt. Express 16(2), 1300–1320 (2008).
[Crossref] [PubMed]

R. Salem, M. A. Foster, A. C. Turner, D. F. Geraghty, M. Lipson, and A. L. Gaeta, “Signal regeneration using low-power four-wave mixing on silicon chip,” Nat. Photonics 2(1), 35–38 (2008).
[Crossref]

M. A. Foster, A. C. Turner, R. Salem, M. Lipson, and A. L. Gaeta, “Broad-band continuous-wave parametric wavelength conversion in silicon nanowaveguides,” Opt. Express 15(20), 12949–12958 (2007).
[Crossref] [PubMed]

R. Salem, M. A. Foster, A. C. Turner, D. F. Geraghty, M. Lipson, and A. L. Gaeta, “All-optical regeneration on a silicon chip,” Opt. Express 15(12), 7802–7809 (2007).
[Crossref] [PubMed]

M. A. Foster, A. C. Turner, J. E. Sharping, B. S. Schmidt, M. Lipson, and A. L. Gaeta, “Broad-band optical parametric gain on a silicon photonic chip,” Nature 441(7096), 960–963 (2006).
[Crossref] [PubMed]

Gai, X.

Galili, M.

Georgiev, D. G.

P. Boolchand, D. G. Georgiev, and B. Goodman, “Discovery of the Intermediate Phase in Chalcogenide Glasses,” J. Optoelectron. Adv. Mater. 3, 703–720 (2001).

Geraghty, D. F.

R. Salem, M. A. Foster, A. C. Turner, D. F. Geraghty, M. Lipson, and A. L. Gaeta, “Signal regeneration using low-power four-wave mixing on silicon chip,” Nat. Photonics 2(1), 35–38 (2008).
[Crossref]

R. Salem, M. A. Foster, A. C. Turner, D. F. Geraghty, M. Lipson, and A. L. Gaeta, “All-optical regeneration on a silicon chip,” Opt. Express 15(12), 7802–7809 (2007).
[Crossref] [PubMed]

Goodman, B.

P. Boolchand, D. G. Georgiev, and B. Goodman, “Discovery of the Intermediate Phase in Chalcogenide Glasses,” J. Optoelectron. Adv. Mater. 3, 703–720 (2001).

Gopinath, J. T.

J. T. Gopinath, M. Sojacic, E. P. Ippen, V. N. Fuflyingin, W. A. King, and M. Shurgailn, “Third Order Nonlinearities in Ge-As-Se-based Glasses for Telecommunications Applications,” J. Appl. Phys. 96(11), 6931–6933 (2004).
[Crossref]

Hamachi, Y.

Harbold, J. M.

Ilday, F. O.

Ippen, E. P.

J. T. Gopinath, M. Sojacic, E. P. Ippen, V. N. Fuflyingin, W. A. King, and M. Shurgailn, “Third Order Nonlinearities in Ge-As-Se-based Glasses for Telecommunications Applications,” J. Appl. Phys. 96(11), 6931–6933 (2004).
[Crossref]

Jacome, L.

Jeppesen, P.

King, W. A.

J. T. Gopinath, M. Sojacic, E. P. Ippen, V. N. Fuflyingin, W. A. King, and M. Shurgailn, “Third Order Nonlinearities in Ge-As-Se-based Glasses for Telecommunications Applications,” J. Appl. Phys. 96(11), 6931–6933 (2004).
[Crossref]

Kitao, M.

Koos, C.

Kuo, Y. H.

Lamont, M. R. E.

M. Pelusi, F. Luan, T. D. Vo, M. R. E. Lamont, S. J. Madden, D. A. Bulla, D. Y. Choi, B. Luther-Davies, and B. J. Eggleton, “Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth,” Nat. Photonics 3(3), 139–143 (2009).
[Crossref]

F. Luan, M. D. Pelusi, M. R. E. Lamont, D. Y. Choi, S. Madden, B. Luther-Davies, and B. J. Eggleton, “Dispersion engineered As(2)S(3) planar waveguides for broadband four-wave mixing based wavelength conversion of 40 Gb/s signals,” Opt. Express 17(5), 3514–3520 (2009).
[Crossref] [PubMed]

M. R. E. Lamont, B. Luther-Davies, D. Y. Choi, S. Madden, X. Gai, and B. J. Eggleton, “Net-gain from a parametric amplifier on a chalcogenide optical chip,” Opt. Express 16(25), 20374–20381 (2008).
[Crossref] [PubMed]

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

D. I. Yeom, E. C. Mägi, M. R. E. Lamont, M. A. F. Roelens, L. Fu, and B. J. Eggleton, “Low-threshold supercontinuum generation in highly nonlinear chalcogenide nanowires,” Opt. Lett. 33(7), 660–662 (2008).
[Crossref] [PubMed]

Lee, B. G.

B. G. Lee, A. Biberman, A. C. Turner-Foster, M. A. Foster, M. Lipson, A. L. Gaeta, and K. Bergman, “Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides,” IEEE Photon. Technol. Lett. 21(3), 182–184 (2009).
[Crossref]

Leuthold, J.

Lipson, M.

A. C. Turner-Foster, M. A. Foster, R. Salem, A. L. Gaeta, and M. Lipson, “Frequency conversion over two-thirds of an octave in silicon nanowaveguides,” Opt. Express 18(3), 1904–1908 (2010).
[Crossref] [PubMed]

B. G. Lee, A. Biberman, A. C. Turner-Foster, M. A. Foster, M. Lipson, A. L. Gaeta, and K. Bergman, “Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides,” IEEE Photon. Technol. Lett. 21(3), 182–184 (2009).
[Crossref]

M. A. Foster, A. C. Turner, M. Lipson, and A. L. Gaeta, “Nonlinear optics in photonic nanowires,” Opt. Express 16(2), 1300–1320 (2008).
[Crossref] [PubMed]

R. Salem, M. A. Foster, A. C. Turner, D. F. Geraghty, M. Lipson, and A. L. Gaeta, “Signal regeneration using low-power four-wave mixing on silicon chip,” Nat. Photonics 2(1), 35–38 (2008).
[Crossref]

M. A. Foster, A. C. Turner, R. Salem, M. Lipson, and A. L. Gaeta, “Broad-band continuous-wave parametric wavelength conversion in silicon nanowaveguides,” Opt. Express 15(20), 12949–12958 (2007).
[Crossref] [PubMed]

R. Salem, M. A. Foster, A. C. Turner, D. F. Geraghty, M. Lipson, and A. L. Gaeta, “All-optical regeneration on a silicon chip,” Opt. Express 15(12), 7802–7809 (2007).
[Crossref] [PubMed]

M. A. Foster, A. C. Turner, J. E. Sharping, B. S. Schmidt, M. Lipson, and A. L. Gaeta, “Broad-band optical parametric gain on a silicon photonic chip,” Nature 441(7096), 960–963 (2006).
[Crossref] [PubMed]

Littler, I. C. M.

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

Luan, F.

M. D. Pelusi, F. Luan, S. Madden, D. Y. Choi, D. A. Bulla, B. Luther-Davies, and B. J. Eggleton, “Wavelength Conversion of High-Speed Phase and Intensity Modulated Signals Using a Highly Nonlinear Chalcogenide Glass Chip,” IEEE Photon. Technol. Lett. 22(1), 3–5 (2010).
[Crossref]

T. D. Vo, M. D. Pelusi, J. Schröder, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Simultaneous multi-impairment monitoring of 640 Gb/s signals using photonic chip based RF spectrum analyzer,” Opt. Express 18(4), 3938–3945 (2010).
[Crossref] [PubMed]

M. Galili, J. Xu, H. C. H. Mulvad, L. K. Oxenløwe, A. T. Clausen, P. Jeppesen, B. Luther-Davis, S. Madden, A. Rode, D. Y. Choi, M. Pelusi, F. Luan, and B. J. Eggleton, “Breakthrough switching speed with an all-optical chalcogenide glass chip: 640 Gbit/s demultiplexing,” Opt. Express 17(4), 2182–2187 (2009).
[Crossref] [PubMed]

F. Luan, M. D. Pelusi, M. R. E. Lamont, D. Y. Choi, S. Madden, B. Luther-Davies, and B. J. Eggleton, “Dispersion engineered As(2)S(3) planar waveguides for broadband four-wave mixing based wavelength conversion of 40 Gb/s signals,” Opt. Express 17(5), 3514–3520 (2009).
[Crossref] [PubMed]

M. D. Pelusi, T. D. Vo, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Terahertz bandwidth RF spectrum analysis of femtosecond pulses using a chalcogenide chip,” Opt. Express 17(11), 9314–9322 (2009).
[Crossref] [PubMed]

M. Pelusi, F. Luan, T. D. Vo, M. R. E. Lamont, S. J. Madden, D. A. Bulla, D. Y. Choi, B. Luther-Davies, and B. J. Eggleton, “Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth,” Nat. Photonics 3(3), 139–143 (2009).
[Crossref]

Lucas, J.

C. Quemard, F. Smektala, V. Couderc, A. Barthelemy, and J. Lucas, “Chalcogenide Glasses with High Nonlinear Optical Properties for Telecommunications,” J. Phys. Chem. Solids 62(8), 1435–1440 (2001).
[Crossref]

Lusse, P.

P. Lusse, P. Stuwe, J. Schule, and H.-G. Unger, “Analysis of Vectorial Mode Fields in Optical Waveguides by a New Finite Difference Method,” J. Lightwave Technol. 12(3), 487–494 (1994).
[Crossref]

Luther-Davies, B.

M. D. Pelusi, F. Luan, S. Madden, D. Y. Choi, D. A. Bulla, B. Luther-Davies, and B. J. Eggleton, “Wavelength Conversion of High-Speed Phase and Intensity Modulated Signals Using a Highly Nonlinear Chalcogenide Glass Chip,” IEEE Photon. Technol. Lett. 22(1), 3–5 (2010).
[Crossref]

T. D. Vo, M. D. Pelusi, J. Schröder, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Simultaneous multi-impairment monitoring of 640 Gb/s signals using photonic chip based RF spectrum analyzer,” Opt. Express 18(4), 3938–3945 (2010).
[Crossref] [PubMed]

M. D. Pelusi, T. D. Vo, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Terahertz bandwidth RF spectrum analysis of femtosecond pulses using a chalcogenide chip,” Opt. Express 17(11), 9314–9322 (2009).
[Crossref] [PubMed]

F. Luan, M. D. Pelusi, M. R. E. Lamont, D. Y. Choi, S. Madden, B. Luther-Davies, and B. J. Eggleton, “Dispersion engineered As(2)S(3) planar waveguides for broadband four-wave mixing based wavelength conversion of 40 Gb/s signals,” Opt. Express 17(5), 3514–3520 (2009).
[Crossref] [PubMed]

M. Pelusi, F. Luan, T. D. Vo, M. R. E. Lamont, S. J. Madden, D. A. Bulla, D. Y. Choi, B. Luther-Davies, and B. J. Eggleton, “Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth,” Nat. Photonics 3(3), 139–143 (2009).
[Crossref]

D. A. P. Bulla, R. P. Wang, A. Prasad, A. V. Rode, S. J. Madden, and B. Luther-Davies, “On the properties and stability of thermally evaporated Ge-As-Se thin films,” Appl. Phys. (Berl.) 96(3), 615–625 (2009).

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

A. Prasad, C. J. Zha, R. P. Wang, A. Smith, S. Madden, and B. Luther-Davies, “Properties of GexAsySe1-x-y glasses for all-optical signal processing,” Opt. Express 16(4), 2804–2815 (2008).
[Crossref] [PubMed]

M. R. E. Lamont, B. Luther-Davies, D. Y. Choi, S. Madden, X. Gai, and B. J. Eggleton, “Net-gain from a parametric amplifier on a chalcogenide optical chip,” Opt. Express 16(25), 20374–20381 (2008).
[Crossref] [PubMed]

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

Luther-Davis, B.

Madden, S.

M. D. Pelusi, F. Luan, S. Madden, D. Y. Choi, D. A. Bulla, B. Luther-Davies, and B. J. Eggleton, “Wavelength Conversion of High-Speed Phase and Intensity Modulated Signals Using a Highly Nonlinear Chalcogenide Glass Chip,” IEEE Photon. Technol. Lett. 22(1), 3–5 (2010).
[Crossref]

M. Galili, J. Xu, H. C. H. Mulvad, L. K. Oxenløwe, A. T. Clausen, P. Jeppesen, B. Luther-Davis, S. Madden, A. Rode, D. Y. Choi, M. Pelusi, F. Luan, and B. J. Eggleton, “Breakthrough switching speed with an all-optical chalcogenide glass chip: 640 Gbit/s demultiplexing,” Opt. Express 17(4), 2182–2187 (2009).
[Crossref] [PubMed]

F. Luan, M. D. Pelusi, M. R. E. Lamont, D. Y. Choi, S. Madden, B. Luther-Davies, and B. J. Eggleton, “Dispersion engineered As(2)S(3) planar waveguides for broadband four-wave mixing based wavelength conversion of 40 Gb/s signals,” Opt. Express 17(5), 3514–3520 (2009).
[Crossref] [PubMed]

M. R. E. Lamont, B. Luther-Davies, D. Y. Choi, S. Madden, X. Gai, and B. J. Eggleton, “Net-gain from a parametric amplifier on a chalcogenide optical chip,” Opt. Express 16(25), 20374–20381 (2008).
[Crossref] [PubMed]

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

A. Prasad, C. J. Zha, R. P. Wang, A. Smith, S. Madden, and B. Luther-Davies, “Properties of GexAsySe1-x-y glasses for all-optical signal processing,” Opt. Express 16(4), 2804–2815 (2008).
[Crossref] [PubMed]

Madden, S. J.

T. D. Vo, M. D. Pelusi, J. Schröder, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Simultaneous multi-impairment monitoring of 640 Gb/s signals using photonic chip based RF spectrum analyzer,” Opt. Express 18(4), 3938–3945 (2010).
[Crossref] [PubMed]

M. D. Pelusi, T. D. Vo, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Terahertz bandwidth RF spectrum analysis of femtosecond pulses using a chalcogenide chip,” Opt. Express 17(11), 9314–9322 (2009).
[Crossref] [PubMed]

D. A. P. Bulla, R. P. Wang, A. Prasad, A. V. Rode, S. J. Madden, and B. Luther-Davies, “On the properties and stability of thermally evaporated Ge-As-Se thin films,” Appl. Phys. (Berl.) 96(3), 615–625 (2009).

M. Pelusi, F. Luan, T. D. Vo, M. R. E. Lamont, S. J. Madden, D. A. Bulla, D. Y. Choi, B. Luther-Davies, and B. J. Eggleton, “Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth,” Nat. Photonics 3(3), 139–143 (2009).
[Crossref]

Maeda, S.

Magi, E.

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

Mägi, E. C.

Minakata, M.

Moss, D. J.

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

Mulvad, H. C. H.

Nguyen, V. Q.

Ogusu, K.

Oxenløwe, L. K.

Paniccia, M.

Paniccia, M. J.

Pelusi, M.

M. Pelusi, F. Luan, T. D. Vo, M. R. E. Lamont, S. J. Madden, D. A. Bulla, D. Y. Choi, B. Luther-Davies, and B. J. Eggleton, “Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth,” Nat. Photonics 3(3), 139–143 (2009).
[Crossref]

M. Galili, J. Xu, H. C. H. Mulvad, L. K. Oxenløwe, A. T. Clausen, P. Jeppesen, B. Luther-Davis, S. Madden, A. Rode, D. Y. Choi, M. Pelusi, F. Luan, and B. J. Eggleton, “Breakthrough switching speed with an all-optical chalcogenide glass chip: 640 Gbit/s demultiplexing,” Opt. Express 17(4), 2182–2187 (2009).
[Crossref] [PubMed]

Pelusi, M. D.

T. D. Vo, M. D. Pelusi, J. Schröder, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Simultaneous multi-impairment monitoring of 640 Gb/s signals using photonic chip based RF spectrum analyzer,” Opt. Express 18(4), 3938–3945 (2010).
[Crossref] [PubMed]

M. D. Pelusi, F. Luan, S. Madden, D. Y. Choi, D. A. Bulla, B. Luther-Davies, and B. J. Eggleton, “Wavelength Conversion of High-Speed Phase and Intensity Modulated Signals Using a Highly Nonlinear Chalcogenide Glass Chip,” IEEE Photon. Technol. Lett. 22(1), 3–5 (2010).
[Crossref]

M. D. Pelusi, T. D. Vo, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Terahertz bandwidth RF spectrum analysis of femtosecond pulses using a chalcogenide chip,” Opt. Express 17(11), 9314–9322 (2009).
[Crossref] [PubMed]

F. Luan, M. D. Pelusi, M. R. E. Lamont, D. Y. Choi, S. Madden, B. Luther-Davies, and B. J. Eggleton, “Dispersion engineered As(2)S(3) planar waveguides for broadband four-wave mixing based wavelength conversion of 40 Gb/s signals,” Opt. Express 17(5), 3514–3520 (2009).
[Crossref] [PubMed]

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

Phillips, J. C.

J. C. Phillips, “Topology of covalent non-crystalline solids I: Short-range order in chalcogenide alloys,” J. Non-Cryst. Solids 34(2), 153–181 (1979).
[Crossref]

Poulton, C.

Prasad, A.

D. A. P. Bulla, R. P. Wang, A. Prasad, A. V. Rode, S. J. Madden, and B. Luther-Davies, “On the properties and stability of thermally evaporated Ge-As-Se thin films,” Appl. Phys. (Berl.) 96(3), 615–625 (2009).

A. Prasad, C. J. Zha, R. P. Wang, A. Smith, S. Madden, and B. Luther-Davies, “Properties of GexAsySe1-x-y glasses for all-optical signal processing,” Opt. Express 16(4), 2804–2815 (2008).
[Crossref] [PubMed]

A. Prasad, “Ge-As-Se chalcogenide glasses for all-optical signal processing” PhD thesis, Australian National University, 2010.

Quemard, C.

C. Quemard, F. Smektala, V. Couderc, A. Barthelemy, and J. Lucas, “Chalcogenide Glasses with High Nonlinear Optical Properties for Telecommunications,” J. Phys. Chem. Solids 62(8), 1435–1440 (2001).
[Crossref]

Rochette, M.

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

Rode, A.

Rode, A. V.

D. A. P. Bulla, R. P. Wang, A. Prasad, A. V. Rode, S. J. Madden, and B. Luther-Davies, “On the properties and stability of thermally evaporated Ge-As-Se thin films,” Appl. Phys. (Berl.) 96(3), 615–625 (2009).

Roelens, M. A. F.

Rong, H. S.

Ruan, Y. L.

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

Salem, R.

Sanghera, J. S.

Schmidt, B. S.

M. A. Foster, A. C. Turner, J. E. Sharping, B. S. Schmidt, M. Lipson, and A. L. Gaeta, “Broad-band optical parametric gain on a silicon photonic chip,” Nature 441(7096), 960–963 (2006).
[Crossref] [PubMed]

Schröder, J.

Schule, J.

P. Lusse, P. Stuwe, J. Schule, and H.-G. Unger, “Analysis of Vectorial Mode Fields in Optical Waveguides by a New Finite Difference Method,” J. Lightwave Technol. 12(3), 487–494 (1994).
[Crossref]

Sharping, J. E.

M. A. Foster, A. C. Turner, J. E. Sharping, B. S. Schmidt, M. Lipson, and A. L. Gaeta, “Broad-band optical parametric gain on a silicon photonic chip,” Nature 441(7096), 960–963 (2006).
[Crossref] [PubMed]

Shaw, L. B.

Shokooh-Saremi, M.

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

Shurgailn, M.

J. T. Gopinath, M. Sojacic, E. P. Ippen, V. N. Fuflyingin, W. A. King, and M. Shurgailn, “Third Order Nonlinearities in Ge-As-Se-based Glasses for Telecommunications Applications,” J. Appl. Phys. 96(11), 6931–6933 (2004).
[Crossref]

Sih, V.

Smektala, F.

C. Quemard, F. Smektala, V. Couderc, A. Barthelemy, and J. Lucas, “Chalcogenide Glasses with High Nonlinear Optical Properties for Telecommunications,” J. Phys. Chem. Solids 62(8), 1435–1440 (2001).
[Crossref]

Smith, A.

Sojacic, M.

J. T. Gopinath, M. Sojacic, E. P. Ippen, V. N. Fuflyingin, W. A. King, and M. Shurgailn, “Third Order Nonlinearities in Ge-As-Se-based Glasses for Telecommunications Applications,” J. Appl. Phys. 96(11), 6931–6933 (2004).
[Crossref]

Stuwe, P.

P. Lusse, P. Stuwe, J. Schule, and H.-G. Unger, “Analysis of Vectorial Mode Fields in Optical Waveguides by a New Finite Difference Method,” J. Lightwave Technol. 12(3), 487–494 (1994).
[Crossref]

Suzuki, K.

Ta’eed, V. G.

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

Tanaka, K.

K. Tanaka, “Structural phase transitions in chalcogenide glasses,” Phys. Rev. B Condens. Matter 39(2), 1270–1279 (1989).
[Crossref] [PubMed]

Turner, A. C.

Turner-Foster, A. C.

A. C. Turner-Foster, M. A. Foster, R. Salem, A. L. Gaeta, and M. Lipson, “Frequency conversion over two-thirds of an octave in silicon nanowaveguides,” Opt. Express 18(3), 1904–1908 (2010).
[Crossref] [PubMed]

B. G. Lee, A. Biberman, A. C. Turner-Foster, M. A. Foster, M. Lipson, A. L. Gaeta, and K. Bergman, “Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides,” IEEE Photon. Technol. Lett. 21(3), 182–184 (2009).
[Crossref]

Unger, H.-G.

P. Lusse, P. Stuwe, J. Schule, and H.-G. Unger, “Analysis of Vectorial Mode Fields in Optical Waveguides by a New Finite Difference Method,” J. Lightwave Technol. 12(3), 487–494 (1994).
[Crossref]

Vo, T. D.

Wang, C. C.

C. C. Wang, “Empirical Relation Between the Linear and the Third Order Nonlinear Optical Susceptibilities,” Phys. Rev. B 2(6), 2045–2048 (1970).
[Crossref]

Wang, R. P.

D. A. P. Bulla, R. P. Wang, A. Prasad, A. V. Rode, S. J. Madden, and B. Luther-Davies, “On the properties and stability of thermally evaporated Ge-As-Se thin films,” Appl. Phys. (Berl.) 96(3), 615–625 (2009).

A. Prasad, C. J. Zha, R. P. Wang, A. Smith, S. Madden, and B. Luther-Davies, “Properties of GexAsySe1-x-y glasses for all-optical signal processing,” Opt. Express 16(4), 2804–2815 (2008).
[Crossref] [PubMed]

Wise, F. W.

Xu, J.

Xu, S. B.

Yamasaki, J.

Yeom, D. I.

Yin, L.

Zha, C. J.

Appl. Phys. (Berl.) (1)

D. A. P. Bulla, R. P. Wang, A. Prasad, A. V. Rode, S. J. Madden, and B. Luther-Davies, “On the properties and stability of thermally evaporated Ge-As-Se thin films,” Appl. Phys. (Berl.) 96(3), 615–625 (2009).

IEEE J. Sel. Top. Quantum Electron. (2)

See. e.g. M. D. Pelusi, V. G. Ta’eed, L. B. Fu, E. Magi, M. R. E. Lamont, S. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing,” IEEE J. Sel. Top. Quantum Electron. 14(3), 529–539 (2008).
[Crossref]

V. G. Ta’eed, M. Shokooh-Saremi, L. B. Fu, I. C. M. Littler, D. J. Moss, M. Rochette, B. J. Eggleton, Y. L. Ruan, and B. Luther-Davies, “Self-phase modulation-based integrated optical regeneration in chalcogenide waveguides,” IEEE J. Sel. Top. Quantum Electron. 12(3), 360–370 (2006).
[Crossref]

IEEE Photon. Technol. Lett. (2)

B. G. Lee, A. Biberman, A. C. Turner-Foster, M. A. Foster, M. Lipson, A. L. Gaeta, and K. Bergman, “Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides,” IEEE Photon. Technol. Lett. 21(3), 182–184 (2009).
[Crossref]

M. D. Pelusi, F. Luan, S. Madden, D. Y. Choi, D. A. Bulla, B. Luther-Davies, and B. J. Eggleton, “Wavelength Conversion of High-Speed Phase and Intensity Modulated Signals Using a Highly Nonlinear Chalcogenide Glass Chip,” IEEE Photon. Technol. Lett. 22(1), 3–5 (2010).
[Crossref]

J. Appl. Phys. (1)

J. T. Gopinath, M. Sojacic, E. P. Ippen, V. N. Fuflyingin, W. A. King, and M. Shurgailn, “Third Order Nonlinearities in Ge-As-Se-based Glasses for Telecommunications Applications,” J. Appl. Phys. 96(11), 6931–6933 (2004).
[Crossref]

J. Lightwave Technol. (1)

P. Lusse, P. Stuwe, J. Schule, and H.-G. Unger, “Analysis of Vectorial Mode Fields in Optical Waveguides by a New Finite Difference Method,” J. Lightwave Technol. 12(3), 487–494 (1994).
[Crossref]

J. Non-Cryst. Solids (1)

J. C. Phillips, “Topology of covalent non-crystalline solids I: Short-range order in chalcogenide alloys,” J. Non-Cryst. Solids 34(2), 153–181 (1979).
[Crossref]

J. Optoelectron. Adv. Mater. (1)

P. Boolchand, D. G. Georgiev, and B. Goodman, “Discovery of the Intermediate Phase in Chalcogenide Glasses,” J. Optoelectron. Adv. Mater. 3, 703–720 (2001).

J. Phys. Chem. Solids (1)

C. Quemard, F. Smektala, V. Couderc, A. Barthelemy, and J. Lucas, “Chalcogenide Glasses with High Nonlinear Optical Properties for Telecommunications,” J. Phys. Chem. Solids 62(8), 1435–1440 (2001).
[Crossref]

Nat. Photonics (2)

R. Salem, M. A. Foster, A. C. Turner, D. F. Geraghty, M. Lipson, and A. L. Gaeta, “Signal regeneration using low-power four-wave mixing on silicon chip,” Nat. Photonics 2(1), 35–38 (2008).
[Crossref]

M. Pelusi, F. Luan, T. D. Vo, M. R. E. Lamont, S. J. Madden, D. A. Bulla, D. Y. Choi, B. Luther-Davies, and B. J. Eggleton, “Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth,” Nat. Photonics 3(3), 139–143 (2009).
[Crossref]

Nature (1)

M. A. Foster, A. C. Turner, J. E. Sharping, B. S. Schmidt, M. Lipson, and A. L. Gaeta, “Broad-band optical parametric gain on a silicon photonic chip,” Nature 441(7096), 960–963 (2006).
[Crossref] [PubMed]

Opt. Express (13)

M. Galili, J. Xu, H. C. H. Mulvad, L. K. Oxenløwe, A. T. Clausen, P. Jeppesen, B. Luther-Davis, S. Madden, A. Rode, D. Y. Choi, M. Pelusi, F. Luan, and B. J. Eggleton, “Breakthrough switching speed with an all-optical chalcogenide glass chip: 640 Gbit/s demultiplexing,” Opt. Express 17(4), 2182–2187 (2009).
[Crossref] [PubMed]

M. D. Pelusi, T. D. Vo, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Terahertz bandwidth RF spectrum analysis of femtosecond pulses using a chalcogenide chip,” Opt. Express 17(11), 9314–9322 (2009).
[Crossref] [PubMed]

R. Salem, M. A. Foster, A. C. Turner, D. F. Geraghty, M. Lipson, and A. L. Gaeta, “All-optical regeneration on a silicon chip,” Opt. Express 15(12), 7802–7809 (2007).
[Crossref] [PubMed]

T. D. Vo, M. D. Pelusi, J. Schröder, F. Luan, S. J. Madden, D. Y. Choi, D. A. P. Bulla, B. Luther-Davies, and B. J. Eggleton, “Simultaneous multi-impairment monitoring of 640 Gb/s signals using photonic chip based RF spectrum analyzer,” Opt. Express 18(4), 3938–3945 (2010).
[Crossref] [PubMed]

A. C. Turner-Foster, M. A. Foster, R. Salem, A. L. Gaeta, and M. Lipson, “Frequency conversion over two-thirds of an octave in silicon nanowaveguides,” Opt. Express 18(3), 1904–1908 (2010).
[Crossref] [PubMed]

M. A. Foster, A. C. Turner, M. Lipson, and A. L. Gaeta, “Nonlinear optics in photonic nanowires,” Opt. Express 16(2), 1300–1320 (2008).
[Crossref] [PubMed]

Y. H. Kuo, H. S. Rong, V. Sih, S. B. Xu, M. Paniccia, and O. Cohen, “Demonstration of wavelength conversion at 40 Gb/s data rate in silicon waveguides,” Opt. Express 14(24), 11721–11726 (2006).
[Crossref] [PubMed]

M. A. Foster, A. C. Turner, R. Salem, M. Lipson, and A. L. Gaeta, “Broad-band continuous-wave parametric wavelength conversion in silicon nanowaveguides,” Opt. Express 15(20), 12949–12958 (2007).
[Crossref] [PubMed]

F. Luan, M. D. Pelusi, M. R. E. Lamont, D. Y. Choi, S. Madden, B. Luther-Davies, and B. J. Eggleton, “Dispersion engineered As(2)S(3) planar waveguides for broadband four-wave mixing based wavelength conversion of 40 Gb/s signals,” Opt. Express 17(5), 3514–3520 (2009).
[Crossref] [PubMed]

M. R. E. Lamont, B. Luther-Davies, D. Y. Choi, S. Madden, X. Gai, and B. J. Eggleton, “Net-gain from a parametric amplifier on a chalcogenide optical chip,” Opt. Express 16(25), 20374–20381 (2008).
[Crossref] [PubMed]

A. Prasad, C. J. Zha, R. P. Wang, A. Smith, S. Madden, and B. Luther-Davies, “Properties of GexAsySe1-x-y glasses for all-optical signal processing,” Opt. Express 16(4), 2804–2815 (2008).
[Crossref] [PubMed]

K. Suzuki, Y. Hamachi, and T. Baba, “Fabrication and characterization of chalcogenide glass photonic crystal waveguides,” Opt. Express 17(25), 22393–22400 (2009).
[Crossref]

C. Koos, L. Jacome, C. Poulton, J. Leuthold, and W. Freude, “Nonlinear silicon-on-insulator waveguides for all-optical signal processing,” Opt. Express 15(10), 5976–5990 (2007).
[Crossref] [PubMed]

Opt. Lett. (5)

Phys. Rev. B (1)

C. C. Wang, “Empirical Relation Between the Linear and the Third Order Nonlinear Optical Susceptibilities,” Phys. Rev. B 2(6), 2045–2048 (1970).
[Crossref]

Phys. Rev. B Condens. Matter (1)

K. Tanaka, “Structural phase transitions in chalcogenide glasses,” Phys. Rev. B Condens. Matter 39(2), 1270–1279 (1989).
[Crossref] [PubMed]

Other (1)

A. Prasad, “Ge-As-Se chalcogenide glasses for all-optical signal processing” PhD thesis, Australian National University, 2010.

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Figures (6)

Fig. 1.
Fig. 1. (a) Comparison of bandgap of bulk and as-deposited films vs Mean Coordination Number for Ge-Se-As chalcogenide glasses (b) Band gap against annealing temperature for films with MCN of 2.48 and 2.78.

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Fig. 2.
Fig. 2. (a) The dispersion parameter of the fundamental TM mode as function of film thickness and wavelength in 630nm wide Ge11.5As24Se64.5 nanowires. The curve indicated the zero-dispersion. (b) The same parameter as (a) for the TE mode. (c) The dispersion for TM (blue curve) and TE (red curve) for 500nm film thickness. (d) The nonlinear coefficient for TM (blue curve) and TE (red curve).

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Fig. 3.
Fig. 3. (a): SEM images of nanowires (the insert shows the profile before stripping the PMMA resist), the core was 630nm wide × 500nm high; 3(b) Loss measurement for the nanowires obtained by the cut-back method. The blue line is for the TM mode and red for TE. The intercept on the y-axis indicates the total coupling loss of the waveguide

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Fig. 4.
Fig. 4. (a) The experimental arrangement for the CW FWM experiment used to measure the nonlinear coefficient; (b) The measured idler conversion as a function of pump power; (c) A sample spectrum from CW FWM experiment.

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Fig. 5.
Fig. 5. The measured supercontinuum spectrum for 25W peak power pulses in both TM (red) and TE (blue) polarizations.

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Fig. 6
Fig. 6 (a) A comparison between experiment and simulation result for the TM mode supercontinuum (SC) spectrum. The blue curve is the experimental result and red the simulation. (b) The experimental result and simulation for the TE mode. (c) The SC spectra for TM mode with loss of 2.6dB/cm at different input powers; (d) The SC spectra in TE mode with loss of 2.6dB/cm at different input power.

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Equations (4)

Equations on this page are rendered with MathJax. Learn more.

η = exp ( − αL ) ( γ P p L eff ) 2
L eff = 1 + exp ( − 2 αL ) − 2 exp ( − αL ) cos ( ∆ βL ) α 2 + ∆ β 2
∂ ∂ z Α ( z , t ) = − α 2 A + ∑ m ≥ 2 i m + 1 β m m ! ∂ m A ∂ t m
  + i ( γ + i α 2 2 A eff ) ( 1 + i ω 0 ∂ ∂ t ) ( A ( z , t ) ∫ − ∞ ∞ R ( t ′ ) ∣ A ( z , t − t ′ ) ∣ 2 dt ′ ) ,

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