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[Crossref]

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[Crossref]
[PubMed]

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[Crossref]

D. S. Abrams and L. Pang, “Fast inverse lithography technology,” Proc. SPIE 6154, 534–542 (2006).

C. Hung, B. Zhang, E. Guo, L. Pang, Y. Liu, K. Wang, and G. Dai, “Pushing the lithography limit: Applying inverse lithography technology (ILT) at the 65nm generation,” Proc. SPIE 6154, 61541M (2006).

[Crossref]

L. Pang, Y. Liu, and D. Abrams, “Inverse lithography technology (ILT): What is the impact to the photomask industry?” Proc. SPIE 6283, 62830X (2006).

[Crossref]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

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[Crossref]
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[Crossref]

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[Crossref]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

C. Hung, B. Zhang, E. Guo, L. Pang, Y. Liu, K. Wang, and G. Dai, “Pushing the lithography limit: Applying inverse lithography technology (ILT) at the 65nm generation,” Proc. SPIE 6154, 61541M (2006).

[Crossref]

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[Crossref]
[PubMed]

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[Crossref]

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[Crossref]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

C. Hung, B. Zhang, E. Guo, L. Pang, Y. Liu, K. Wang, and G. Dai, “Pushing the lithography limit: Applying inverse lithography technology (ILT) at the 65nm generation,” Proc. SPIE 6154, 61541M (2006).

[Crossref]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

C. Hung, B. Zhang, E. Guo, L. Pang, Y. Liu, K. Wang, and G. Dai, “Pushing the lithography limit: Applying inverse lithography technology (ILT) at the 65nm generation,” Proc. SPIE 6154, 61541M (2006).

[Crossref]

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[Crossref]

X. Ma and G. R. Arce, “Pixel-based simultaneous source and mask optimization for resolution enhancement in optical lithography,” Opt. Express 17(7), 5783–5793 (2009).

[Crossref]
[PubMed]

X. Ma and G. R. Arce, “PSM design for inverse lithography with partially coherent illumination,” Opt. Express 16(24), 20126–20141 (2008).

[Crossref]
[PubMed]

X. Ma and G. Arce, “Binary mask optimization for inverse lithography with partially coherent illumination,” J. Opt. Soc. Am. A 25(12), 2960–2970 (2008).

[Crossref]

X. Ma and G. R. Arce, “Generalized inverse lithography methods for phase-shifting mask design,” Opt. Express 15(23), 15066–15079 (2007).

[Crossref]
[PubMed]

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[Crossref]
[PubMed]

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[Crossref]

C. Hung, B. Zhang, E. Guo, L. Pang, Y. Liu, K. Wang, and G. Dai, “Pushing the lithography limit: Applying inverse lithography technology (ILT) at the 65nm generation,” Proc. SPIE 6154, 61541M (2006).

[Crossref]

D. S. Abrams and L. Pang, “Fast inverse lithography technology,” Proc. SPIE 6154, 534–542 (2006).

A. Poonawala and P. Milanfar, “Mask design for optical microlithography--an inverse imaging problem,” IEEE Trans. Image Process. 16(3), 774–788 (2007).

[Crossref]
[PubMed]

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[Crossref]
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[Crossref]

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S. Sherif, B. Saleh, and R. De Leone, “Binary image synthesis using mixed linear integer programming,” IEEE Trans. Image Process. 4(9), 1252–1257 (1995).

[Crossref]
[PubMed]

C. Hung, B. Zhang, E. Guo, L. Pang, Y. Liu, K. Wang, and G. Dai, “Pushing the lithography limit: Applying inverse lithography technology (ILT) at the 65nm generation,” Proc. SPIE 6154, 61541M (2006).

[Crossref]

J.-C. Yu, P. Yu, and H.-Y. Chao, “Model-based sub-resolution assist features using an inverse lithography method,” Proc. SPIE 7140, 714014 (2008).

[Crossref]

J.-C. Yu, P. Yu, and H.-Y. Chao, “Model-based sub-resolution assist features using an inverse lithography method,” Proc. SPIE 7140, 714014 (2008).

[Crossref]

C. Hung, B. Zhang, E. Guo, L. Pang, Y. Liu, K. Wang, and G. Dai, “Pushing the lithography limit: Applying inverse lithography technology (ILT) at the 65nm generation,” Proc. SPIE 6154, 61541M (2006).

[Crossref]

S. Sherif, B. Saleh, and R. De Leone, “Binary image synthesis using mixed linear integer programming,” IEEE Trans. Image Process. 4(9), 1252–1257 (1995).

[Crossref]
[PubMed]

A. Poonawala and P. Milanfar, “Mask design for optical microlithography--an inverse imaging problem,” IEEE Trans. Image Process. 16(3), 774–788 (2007).

[Crossref]
[PubMed]

Y. Granik, “Fast pixel-based mask optimization for inverse lithography,” J. Microlith. Microfab. Microsyst. 5, 043002 (2006).

[Crossref]

B. Saleh and S. Sayegh, “Reductions of errors of microphotographic reproductions by optical corrections of original masks,” Opt. Eng. 20, 781–784 (1981).

X. Ma and G. R. Arce, “PSM design for inverse lithography with partially coherent illumination,” Opt. Express 16(24), 20126–20141 (2008).

[Crossref]
[PubMed]

X. Ma and G. R. Arce, “Pixel-based simultaneous source and mask optimization for resolution enhancement in optical lithography,” Opt. Express 17(7), 5783–5793 (2009).

[Crossref]
[PubMed]

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[Crossref]
[PubMed]

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[Crossref]
[PubMed]

S. H. Chan, A. K. Wong, and E. Y. Lam, “Initialization for robust inverse synthesis of phase-shifting masks in optical projection lithography,” Opt. Express 16(19), 14746–14760 (2008).

[Crossref]
[PubMed]

W. Huang, C. Lin, C. Kuo, C. Huang, J. Lin, J. Chen, R. Liu, Y. Ku, and B. Lin, “Two threshold resist models for optical proximity correction,” Proc. SPIE 5377, 1536–1543 (2001).

[Crossref]

D. S. Abrams and L. Pang, “Fast inverse lithography technology,” Proc. SPIE 6154, 534–542 (2006).

C. Hung, B. Zhang, E. Guo, L. Pang, Y. Liu, K. Wang, and G. Dai, “Pushing the lithography limit: Applying inverse lithography technology (ILT) at the 65nm generation,” Proc. SPIE 6154, 61541M (2006).

[Crossref]

L. Pang, Y. Liu, and D. Abrams, “Inverse lithography technology (ILT): What is the impact to the photomask industry?” Proc. SPIE 6283, 62830X (2006).

[Crossref]

J.-C. Yu, P. Yu, and H.-Y. Chao, “Model-based sub-resolution assist features using an inverse lithography method,” Proc. SPIE 7140, 714014 (2008).

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