Abstract

We have developed a compact all-optical gate switch with a footprint less than 1 mm2, in which an optical nonlinear waveguide using cross-phase-modulation associated with intersubband transition in InGaAs/AlGaAs/AlAsSb coupled double quantum wells and a Michelson interferometer (MI) are monolithically integrated on an InP chip. The MI configuration allows a transverse magnetic pump light direct access to an MI arm for phase modulation while passive photonic integrated circuits serve a transverse electric signal light. Full switching of the π-rad nonlinear phase shift is achieved with a pump pulse energy of 8.6 pJ at a 10-GHz repetition rate. We also demonstrate all-optical demultiplexing of a 160-Gb/s signal to a 40-Gb/s signal.

©2011 Optical Society of America

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  1. H. Ishikawa, Ultrafast All-Optical Signal Processing Devices, (Wiley, 2008) Chap. 5.
  2. H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett. 32(7), 751–753 (2007).
    [Crossref] [PubMed]
  3. H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
    [Crossref]
  4. G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B 78(7), 075308 (2008).
    [Crossref]
  5. G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009).
    [Crossref]
  6. S. Gozu, T. Mozume, R. Akimoto, I. Akita, C. Guangwei, and H. Ishikawa, “Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength,” Appl. Phys. Express2, 42201 (2009).
    [Crossref]
  7. R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
    [Crossref]
  8. R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).
  9. R. Akimoto, S. Gozu, T. Mozume, K. Akita, G. W. Cong, T. Hasama, and H. Ishikawa, “All-Optical Wavelength Conversion at 160Gb/s by Intersubband Transition Switches Utilizing Efficient XPM in InGaAs/AlAsSb Coupled Double Quantum Well,” in Proceedings of 35th European Conference on Optical Communication, (VDE VERLAG GMBH, Berlin, 2009)1.2.2.
  10. T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
    [Crossref]
  11. G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett. 96(10), 101901 (2010).
    [Crossref]
  12. G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett. 22(24), 1820–1822 (2010).
    [Crossref]
  13. R. Schnabel, W. Pieper, A. Ehrhardt, M. Eiselt, and H. G. Weber, “Wavelength conversion and switching of high speed data signals using semiconductor laser amplifiers,” Electron. Lett. 29, 2047 (1993).
    [Crossref]
  14. B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
    [Crossref]

2010 (3)

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett. 96(10), 101901 (2010).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett. 22(24), 1820–1822 (2010).
[Crossref]

2009 (2)

G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009).
[Crossref]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).

2008 (1)

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B 78(7), 075308 (2008).
[Crossref]

2007 (3)

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett. 32(7), 751–753 (2007).
[Crossref] [PubMed]

1997 (1)

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

1993 (1)

R. Schnabel, W. Pieper, A. Ehrhardt, M. Eiselt, and H. G. Weber, “Wavelength conversion and switching of high speed data signals using semiconductor laser amplifiers,” Electron. Lett. 29, 2047 (1993).
[Crossref]

Abedin, K. S.

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

Akimoto, R.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett. 96(10), 101901 (2010).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett. 22(24), 1820–1822 (2010).
[Crossref]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).

G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009).
[Crossref]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B 78(7), 075308 (2008).
[Crossref]

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

S. Gozu, T. Mozume, R. Akimoto, I. Akita, C. Guangwei, and H. Ishikawa, “Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength,” Appl. Phys. Express2, 42201 (2009).
[Crossref]

Akita, I.

S. Gozu, T. Mozume, R. Akimoto, I. Akita, C. Guangwei, and H. Ishikawa, “Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength,” Appl. Phys. Express2, 42201 (2009).
[Crossref]

Akita, K.

G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009).
[Crossref]

Bouchoule, S.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Cong, G. W.

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett. 96(10), 101901 (2010).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett. 22(24), 1820–1822 (2010).
[Crossref]

G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009).
[Crossref]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B 78(7), 075308 (2008).
[Crossref]

Danielsen, S. L.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Daub, K.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Ehrhardt, A.

R. Schnabel, W. Pieper, A. Ehrhardt, M. Eiselt, and H. G. Weber, “Wavelength conversion and switching of high speed data signals using semiconductor laser amplifiers,” Electron. Lett. 29, 2047 (1993).
[Crossref]

Eiselt, M.

R. Schnabel, W. Pieper, A. Ehrhardt, M. Eiselt, and H. G. Weber, “Wavelength conversion and switching of high speed data signals using semiconductor laser amplifiers,” Electron. Lett. 29, 2047 (1993).
[Crossref]

Gozu, S.

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett. 22(24), 1820–1822 (2010).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett. 96(10), 101901 (2010).
[Crossref]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).

G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009).
[Crossref]

S. Gozu, T. Mozume, R. Akimoto, I. Akita, C. Guangwei, and H. Ishikawa, “Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength,” Appl. Phys. Express2, 42201 (2009).
[Crossref]

Guangwei, C.

S. Gozu, T. Mozume, R. Akimoto, I. Akita, C. Guangwei, and H. Ishikawa, “Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength,” Appl. Phys. Express2, 42201 (2009).
[Crossref]

Hansen, P. B.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Hasama, H.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

Hasama, T.

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett. 96(10), 101901 (2010).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett. 22(24), 1820–1822 (2010).
[Crossref]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).

G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009).
[Crossref]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B 78(7), 075308 (2008).
[Crossref]

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

Idler, W.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Ishikawa, H.

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett. 22(24), 1820–1822 (2010).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett. 96(10), 101901 (2010).
[Crossref]

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).

G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009).
[Crossref]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B 78(7), 075308 (2008).
[Crossref]

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett. 32(7), 751–753 (2007).
[Crossref] [PubMed]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

S. Gozu, T. Mozume, R. Akimoto, I. Akita, C. Guangwei, and H. Ishikawa, “Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength,” Appl. Phys. Express2, 42201 (2009).
[Crossref]

Joergensen, C.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Kasai, J.

Kloch, A.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Kurosu, T.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

Kuwatsuka, H.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

Lach, E.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Laube, G.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Lim, C. G.

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

Mikkelsen, B.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Miyazaki, T.

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

Morito, K.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

Mozume, T.

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett. 96(10), 101901 (2010).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett. 22(24), 1820–1822 (2010).
[Crossref]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).

G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009).
[Crossref]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B 78(7), 075308 (2008).
[Crossref]

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett. 32(7), 751–753 (2007).
[Crossref] [PubMed]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

S. Gozu, T. Mozume, R. Akimoto, I. Akita, C. Guangwei, and H. Ishikawa, “Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength,” Appl. Phys. Express2, 42201 (2009).
[Crossref]

Nagase, M.

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B 78(7), 075308 (2008).
[Crossref]

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett. 32(7), 751–753 (2007).
[Crossref] [PubMed]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

Namiki, S.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

Pieper, W.

R. Schnabel, W. Pieper, A. Ehrhardt, M. Eiselt, and H. G. Weber, “Wavelength conversion and switching of high speed data signals using semiconductor laser amplifiers,” Electron. Lett. 29, 2047 (1993).
[Crossref]

Poulsen, H. N.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Schilling, M.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Schnabel, R.

R. Schnabel, W. Pieper, A. Ehrhardt, M. Eiselt, and H. G. Weber, “Wavelength conversion and switching of high speed data signals using semiconductor laser amplifiers,” Electron. Lett. 29, 2047 (1993).
[Crossref]

Sekiguchi, S.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

Simoyama, T.

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett. 32(7), 751–753 (2007).
[Crossref] [PubMed]

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

Stubkjaer, K. E.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Tsuchida, H.

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett. 32(7), 751–753 (2007).
[Crossref] [PubMed]

Vaa, M.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Weber, H. G.

R. Schnabel, W. Pieper, A. Ehrhardt, M. Eiselt, and H. G. Weber, “Wavelength conversion and switching of high speed data signals using semiconductor laser amplifiers,” Electron. Lett. 29, 2047 (1993).
[Crossref]

Wunstel, K.

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

Yasuoka, N.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

Appl. Phys. Lett. (2)

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett. 96(10), 101901 (2010).
[Crossref]

E (1)

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).

Electron. Lett. (2)

R. Schnabel, W. Pieper, A. Ehrhardt, M. Eiselt, and H. G. Weber, “Wavelength conversion and switching of high speed data signals using semiconductor laser amplifiers,” Electron. Lett. 29, 2047 (1993).
[Crossref]

B. Mikkelsen, M. Vaa, H. N. Poulsen, S. L. Danielsen, C. Joergensen, A. Kloch, P. B. Hansen, K. E. Stubkjaer, K. Wunstel, K. Daub, E. Lach, G. Laube, W. Idler, M. Schilling, and S. Bouchoule, “40Gbit/s all-optical wavelength converter and RZ-to-NRZ format adapter realised by monolithic integrated active Michelson interferometer,” Electron. Lett. 33(2), 133–134 (1997).
[Crossref]

IEEE Photon. Technol. Lett. (2)

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s Optical Time Domain Multiplexing and Demultiplexing Using Integratable Semiconductor Devices,” IEEE Photon. Technol. Lett. 22(19), 1416–1418 (2010).
[Crossref]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett. 22(24), 1820–1822 (2010).
[Crossref]

Jpn. J. Appl. Phys. (1)

H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007).
[Crossref]

Opt. Lett. (1)

Phys. Rev. B (2)

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B 78(7), 075308 (2008).
[Crossref]

G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009).
[Crossref]

Other (3)

S. Gozu, T. Mozume, R. Akimoto, I. Akita, C. Guangwei, and H. Ishikawa, “Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength,” Appl. Phys. Express2, 42201 (2009).
[Crossref]

R. Akimoto, S. Gozu, T. Mozume, K. Akita, G. W. Cong, T. Hasama, and H. Ishikawa, “All-Optical Wavelength Conversion at 160Gb/s by Intersubband Transition Switches Utilizing Efficient XPM in InGaAs/AlAsSb Coupled Double Quantum Well,” in Proceedings of 35th European Conference on Optical Communication, (VDE VERLAG GMBH, Berlin, 2009)1.2.2.

H. Ishikawa, Ultrafast All-Optical Signal Processing Devices, (Wiley, 2008) Chap. 5.

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Figures (6)

Fig. 1
Fig. 1 (a) Schematic of the monolithically integrated all-optical gate switch based on a Michelson interferometer. VOA: variable optical attenuator; MZI: Mach-Zehnder interferometer; MMI: multi-mode interference; XPM: cross-phase modulation. (b) Microscope image of the fabricated chip undergoing a test taken by infrared camera. Bright spots at input/output ports are scattered light at facets when a TE signal light at 1560 nm is launched from the signal input port.

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Fig. 2
Fig. 2 (a) Fiber-to-fiber transmittance for TE and TM polarization in a 250-μm-long straight waveguide, fabricated from the same wafer of the all-optical gate switch. The transmittance includes coupling losses between fiber and waveguide. (b) Band diagram in CDQW. Energy levels of e1 to e4 denote subbands in a conduction band, whereas hh and lh denote heavy-hole and light-hole subbands in a valence band, respectively. The vertical allows indicate the optical transitions shown in (a).

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Fig. 3
Fig. 3 (a) Schematic diagram of experimental set-up for XPM measurement in a 1-mm-long straight waveguide. In the reflection configuration, the TE-probe cw light is launched from the AR-coated facet on the right, and the probe light reflected at the HR-coated facet is separated from the input light by an optical circulator. In the transmission configuration, the TE probe cw light is launched from the HR- or AR-coated facet on the left. (b) Peak nonlinear phase shift in the probe light at 1545 nm as a function of the average power of the TM pump pulse at 1545 nm and a 10-GHz repetition rate. XPM efficiency is measured in the following configurations: reflection (0.37 rad/pJ), transmission with HR-coated facet (0.26 rad/pJ), and transmission with AR-coated facet (0.55 rad/pJ). (c) Comparison of temporal changes of nonlinear phase shift in the reflection and transmission configurations.

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Fig. 4
Fig. 4 Fiber-to-fiber transmittance between signal input and signal output ports in a static interference condition as a function of phase bias control voltage for the MI. Measurement is performed at different VOA applied voltage condition. A TE cw light at 1560 nm is launched as the signal.

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Fig. 5
Fig. 5 (a) Gate-switching operation at a 10-GHz repetition rate in which a TM pump of 8.6 pJ/pulse at 1545 nm and a TE probe at 1560 nm are launched. Upper panel: waveform of the probe light intensity returning to the signal input port. Lower panel: waveform of the probe light intensity emerging from the signal output port. (b) Gate width at probe wavelengths of 1535 and 1560 nm as a function of pump pulse energy coupled into the input fiber. The broken horizontal line shows the input pulse width of 2.4 ps as a reference.

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Fig. 6
Fig. 6 Eye pattern of the 160-Gb/s input signal (upper panel) and the demultiplexed 40-Gb/s signal (lower panel). A TM control pulse of 3 pJ/pulse at 1545 nm and 40-GHz repetion rate, and a TE signal of 160 Gb/s at 1560 nm are launched.

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