Abstract

n-ZnO/p-GaN heterojunction light emitting diodes with different interfacial layers were fabricated by pulsed laser deposition. The electroluminescence (EL) spectra of the n-ZnO/p-GaN diodes display a broad blue-violet emission centered at 430 nm, whereas the n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN devices exhibit ultraviolet (UV) emission. Compared with the AlN interlayer, which is blocking both electron and hole at hetero-interface, the utilization of ZnS as intermediate layer can lower the barrier height for holes and keep an effective blocking for electron. Thus, an improved UV EL intensity and a low turn-on voltage (~5V) were obtained. The results were studied by peak-deconvolution with Gaussian functions and were discussed using the band diagram of heterojunctions.

©2013 Optical Society of America

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  1. S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
    [Crossref]
  2. T. S. Lin and C. T. Lee, “Performance investigation of p-i-n ZnO-based thin film homojunction ultraviolet photodetectors,” Appl. Phys. Lett. 101(22), 221118 (2012).
    [Crossref]
  3. Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
    [Crossref]
  4. M. Y. Ke, T. C. Lu, S. C. Yang, C. P. Chen, Y. W. Cheng, L. Y. Chen, C. Y. Chen, J. H. He, and J. J. Huang, “UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers,” Opt. Express 17(25), 22912–22917 (2009).
    [Crossref] [PubMed]
  5. J. T. Chen, W. C. Lai, C. H. Chen, Y. Y. Yang, J. K. Sheu, and L. W. Lai, “Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices,” Opt. Express 19(12), 11873–11879 (2011).
    [Crossref] [PubMed]
  6. S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
    [Crossref]
  7. J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
    [Crossref]
  8. X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
    [Crossref]
  9. S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
    [Crossref]
  10. J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
    [Crossref]
  11. Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
    [Crossref]
  12. H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
    [Crossref]
  13. H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
    [Crossref]
  14. K. M. Yeung, W. S. Tsang, C. L. Mak, and K. H. Wong, “Optical studies of ZnS:Mn films grown by pulsed laser deposition,” J. Appl. Phys. 92(7), 3636–3640 (2002).
    [Crossref]
  15. M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, “ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation,” ACS Nano 3(2), 357–362 (2009).
    [Crossref] [PubMed]
  16. J. M. Siqueiros, R. Machorro, and L. E. Regalado, “Determination of the optical constants of MgF2 and ZnS from spectrophotometric measurements and the classical oscillator method,” Appl. Opt. 27(12), 2549–2553 (1988).
    [Crossref] [PubMed]
  17. N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett. 95(5), 053106 (2009).
    [Crossref]
  18. H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu, and W. P. Cai, “Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls,” Adv. Funct. Mater. 20(4), 561–572 (2010).
    [Crossref]
  19. Y. Y. Gong, T. Andelman, G. F. Neumark, S. O’Brien, and I. L. Kuskovsky, “Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification,” Nanoscale Res. Lett. 2(6), 297–302 (2007).
    [Crossref]
  20. S. Nakamura, T. Mukai, and M. Senon, “High-power GaN p-n junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998–L2001 (1991).
    [Crossref]
  21. M. A. Khan, R. A. Qchen, Skogman, and J. N. Kuznia, “Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers,” Appl. Phys. Lett. 66(16), 2046–2047 (1995).
  22. G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
    [Crossref]
  23. S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
    [Crossref] [PubMed]

2012 (5)

S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
[Crossref]

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
[Crossref]

T. S. Lin and C. T. Lee, “Performance investigation of p-i-n ZnO-based thin film homojunction ultraviolet photodetectors,” Appl. Phys. Lett. 101(22), 221118 (2012).
[Crossref]

G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
[Crossref]

2011 (3)

J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
[Crossref]

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

J. T. Chen, W. C. Lai, C. H. Chen, Y. Y. Yang, J. K. Sheu, and L. W. Lai, “Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices,” Opt. Express 19(12), 11873–11879 (2011).
[Crossref] [PubMed]

2010 (4)

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu, and W. P. Cai, “Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls,” Adv. Funct. Mater. 20(4), 561–572 (2010).
[Crossref]

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[Crossref]

2009 (5)

N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett. 95(5), 053106 (2009).
[Crossref]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, “ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation,” ACS Nano 3(2), 357–362 (2009).
[Crossref] [PubMed]

M. Y. Ke, T. C. Lu, S. C. Yang, C. P. Chen, Y. W. Cheng, L. Y. Chen, C. Y. Chen, J. H. He, and J. J. Huang, “UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers,” Opt. Express 17(25), 22912–22917 (2009).
[Crossref] [PubMed]

2007 (1)

Y. Y. Gong, T. Andelman, G. F. Neumark, S. O’Brien, and I. L. Kuskovsky, “Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification,” Nanoscale Res. Lett. 2(6), 297–302 (2007).
[Crossref]

2003 (1)

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

2002 (1)

K. M. Yeung, W. S. Tsang, C. L. Mak, and K. H. Wong, “Optical studies of ZnS:Mn films grown by pulsed laser deposition,” J. Appl. Phys. 92(7), 3636–3640 (2002).
[Crossref]

1995 (1)

M. A. Khan, R. A. Qchen, Skogman, and J. N. Kuznia, “Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers,” Appl. Phys. Lett. 66(16), 2046–2047 (1995).

1991 (1)

S. Nakamura, T. Mukai, and M. Senon, “High-power GaN p-n junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998–L2001 (1991).
[Crossref]

1988 (1)

Alivov, Y. I.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

Andelman, T.

Y. Y. Gong, T. Andelman, G. F. Neumark, S. O’Brien, and I. L. Kuskovsky, “Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification,” Nanoscale Res. Lett. 2(6), 297–302 (2007).
[Crossref]

Ataev, B. M.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

Bello, I.

S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
[Crossref]

Cai, W. P.

H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu, and W. P. Cai, “Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls,” Adv. Funct. Mater. 20(4), 561–572 (2010).
[Crossref]

Carpick, R. W.

N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett. 95(5), 053106 (2009).
[Crossref]

Carroll, D. L.

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Chen, C. H.

Chen, C. P.

Chen, C. Y.

Chen, G. F.

G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
[Crossref]

Chen, J. T.

Chen, L. J.

M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, “ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation,” ACS Nano 3(2), 357–362 (2009).
[Crossref] [PubMed]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Chen, L. M.

J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
[Crossref]

Chen, L. Y.

Cheng, Y. W.

Choi, S.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Choi, Y. S.

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[Crossref]

Chow, P. P.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Chu, P. K.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Chukichev, M. V.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

Cui, B.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Dabiran, A. M.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Ding, T.

G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
[Crossref]

Dong, J. J.

S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
[Crossref]

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Duan, G. T.

H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu, and W. P. Cai, “Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls,” Adv. Funct. Mater. 20(4), 561–572 (2010).
[Crossref]

Dupuis, R.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Fan, X. W.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Fang, G.

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Felmetsger, V. V.

N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett. 95(5), 053106 (2009).
[Crossref]

Gao, H. L.

S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
[Crossref]

Gong, Y. Y.

Y. Y. Gong, T. Andelman, G. F. Neumark, S. O’Brien, and I. L. Kuskovsky, “Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification,” Nanoscale Res. Lett. 2(6), 297–302 (2007).
[Crossref]

He, J. H.

Hu, Y. F.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Huang, H.

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Huang, J. J.

Hwang, D. K.

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[Crossref]

Jha, S. K.

S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
[Crossref]

Kang, J. W.

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[Crossref]

Ke, M. Y.

Khan, M. A.

M. A. Khan, R. A. Qchen, Skogman, and J. N. Kuznia, “Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers,” Appl. Phys. Lett. 66(16), 2046–2047 (1995).

Kim, H. J.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Kovác, J.

S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
[Crossref]

Kuskovsky, I. L.

Y. Y. Gong, T. Andelman, G. F. Neumark, S. O’Brien, and I. L. Kuskovsky, “Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification,” Nanoscale Res. Lett. 2(6), 297–302 (2007).
[Crossref]

Kutsay, O.

S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
[Crossref]

Kuznia, J. N.

M. A. Khan, R. A. Qchen, Skogman, and J. N. Kuznia, “Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers,” Appl. Phys. Lett. 66(16), 2046–2047 (1995).

Lai, L. W.

Lai, W. C.

Lau, S. P.

J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
[Crossref]

Lee, C. T.

T. S. Lin and C. T. Lee, “Performance investigation of p-i-n ZnO-based thin film homojunction ultraviolet photodetectors,” Appl. Phys. Lett. 101(22), 221118 (2012).
[Crossref]

Lee, C. Y.

M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, “ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation,” ACS Nano 3(2), 357–362 (2009).
[Crossref] [PubMed]

Lee, S. T.

S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
[Crossref]

J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
[Crossref]

Li, B. H.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Li, J. T.

G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
[Crossref]

Li, S.

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Li, Y.

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu, and W. P. Cai, “Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls,” Adv. Funct. Mater. 20(4), 561–572 (2010).
[Crossref]

Lin, T. S.

T. S. Lin and C. T. Lee, “Performance investigation of p-i-n ZnO-based thin film homojunction ultraviolet photodetectors,” Appl. Phys. Lett. 101(22), 221118 (2012).
[Crossref]

Lin, Y.

G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
[Crossref]

Liu, X.

S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
[Crossref]

Liu, Y.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Lochner, Z.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Long, H.

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Look, D. C.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

Lu, M. P.

M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, “ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation,” ACS Nano 3(2), 357–362 (2009).
[Crossref] [PubMed]

Lu, M. Y.

M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, “ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation,” ACS Nano 3(2), 357–362 (2009).
[Crossref] [PubMed]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Lu, T. C.

Lu, Y. M.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Luan, C.

S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
[Crossref]

Luk, C. M.

J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
[Crossref]

Machorro, R.

Mahameed, R.

N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett. 95(5), 053106 (2009).
[Crossref]

Mak, C. L.

K. M. Yeung, W. S. Tsang, C. L. Mak, and K. H. Wong, “Optical studies of ZnS:Mn films grown by pulsed laser deposition,” J. Appl. Phys. 92(7), 3636–3640 (2002).
[Crossref]

Mo, X.

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Mukai, T.

S. Nakamura, T. Mukai, and M. Senon, “High-power GaN p-n junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998–L2001 (1991).
[Crossref]

Nakamura, S.

S. Nakamura, T. Mukai, and M. Senon, “High-power GaN p-n junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998–L2001 (1991).
[Crossref]

Neumark, G. F.

Y. Y. Gong, T. Andelman, G. F. Neumark, S. O’Brien, and I. L. Kuskovsky, “Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification,” Nanoscale Res. Lett. 2(6), 297–302 (2007).
[Crossref]

O’Brien, S.

Y. Y. Gong, T. Andelman, G. F. Neumark, S. O’Brien, and I. L. Kuskovsky, “Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification,” Nanoscale Res. Lett. 2(6), 297–302 (2007).
[Crossref]

Park, S. J.

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[Crossref]

Piazza, G.

N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett. 95(5), 053106 (2009).
[Crossref]

Qchen, R. A.

M. A. Khan, R. A. Qchen, Skogman, and J. N. Kuznia, “Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers,” Appl. Phys. Lett. 66(16), 2046–2047 (1995).

Qu, S.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Regalado, L. E.

Ryou, J. H.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Senon, M.

S. Nakamura, T. Mukai, and M. Senon, “High-power GaN p-n junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998–L2001 (1991).
[Crossref]

Shan, C. X.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Shen, D. Z.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Sheu, J. K.

Shi, Z. L.

G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
[Crossref]

Si, F. T.

S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
[Crossref]

Sinha, N.

N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett. 95(5), 053106 (2009).
[Crossref]

Siqueiros, J. M.

Skogman,

M. A. Khan, R. A. Qchen, Skogman, and J. N. Kuznia, “Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers,” Appl. Phys. Lett. 66(16), 2046–2047 (1995).

Song, J. H.

M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, “ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation,” ACS Nano 3(2), 357–362 (2009).
[Crossref] [PubMed]

Tan, H. R.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Tang, L. B.

J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
[Crossref]

Tang, Z. K.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Tanner, S. M.

N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett. 95(5), 053106 (2009).
[Crossref]

Tian, Z. S.

G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
[Crossref]

To, C. H.

S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
[Crossref]

Tsang, W. S.

K. M. Yeung, W. S. Tsang, C. L. Mak, and K. H. Wong, “Optical studies of ZnS:Mn films grown by pulsed laser deposition,” J. Appl. Phys. 92(7), 3636–3640 (2002).
[Crossref]

Van Nostrand, J. E.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

Wabiszewski, G. E.

N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett. 95(5), 053106 (2009).
[Crossref]

Wang, H.

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Wang, J. X.

S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
[Crossref]

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Wang, Z. G.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Wang, Z. L.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, “ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation,” ACS Nano 3(2), 357–362 (2009).
[Crossref] [PubMed]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Wong, K. H.

K. M. Yeung, W. S. Tsang, C. L. Mak, and K. H. Wong, “Optical studies of ZnS:Mn films grown by pulsed laser deposition,” J. Appl. Phys. 92(7), 3636–3640 (2002).
[Crossref]

Wowchak, A. M.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Xu, C.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Xu, C. X.

G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
[Crossref]

Xu, S.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Xu, X. X.

H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu, and W. P. Cai, “Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls,” Adv. Funct. Mater. 20(4), 561–572 (2010).
[Crossref]

Yang, Q.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Yang, R. S.

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Yang, S. C.

Yang, S. K.

H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu, and W. P. Cai, “Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls,” Adv. Funct. Mater. 20(4), 561–572 (2010).
[Crossref]

Yang, Y. Y.

Yao, B.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Ye, J.

J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
[Crossref]

Yeung, K. M.

K. M. Yeung, W. S. Tsang, C. L. Mak, and K. H. Wong, “Optical studies of ZnS:Mn films grown by pulsed laser deposition,” J. Appl. Phys. 92(7), 3636–3640 (2002).
[Crossref]

Yin, Z. G.

S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
[Crossref]

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

You, J. B.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Yu, S. F.

J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
[Crossref]

Zapien, J. A.

S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
[Crossref]

Zeng, H. B.

H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu, and W. P. Cai, “Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls,” Adv. Funct. Mater. 20(4), 561–572 (2010).
[Crossref]

Zhang, J. Y.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Zhang, S. G.

S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
[Crossref]

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Zhang, W. J.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Zhang, X. M.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Zhang, X. W.

S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
[Crossref]

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Zhang, Y.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Zhang, Z. Z.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Zhao, D. X.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Zhao, X.

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Zhao, Y.

J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
[Crossref]

Zhu, G. Y.

G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
[Crossref]

Zhu, H.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

ACS Nano (1)

M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, “ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation,” ACS Nano 3(2), 357–362 (2009).
[Crossref] [PubMed]

Adv. Funct. Mater. (1)

H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu, and W. P. Cai, “Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls,” Adv. Funct. Mater. 20(4), 561–572 (2010).
[Crossref]

Adv. Mater. (3)

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Appl. Opt. (1)

Appl. Phys. Lett. (10)

N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett. 95(5), 053106 (2009).
[Crossref]

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett. 101(12), 121104 (2012).
[Crossref]

J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 98(26), 263101 (2011).
[Crossref]

S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett. 101(21), 211116 (2012).
[Crossref]

T. S. Lin and C. T. Lee, “Performance investigation of p-i-n ZnO-based thin film homojunction ultraviolet photodetectors,” Appl. Phys. Lett. 101(22), 221118 (2012).
[Crossref]

M. A. Khan, R. A. Qchen, Skogman, and J. N. Kuznia, “Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers,” Appl. Phys. Lett. 66(16), 2046–2047 (1995).

G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett. 101(4), 041110 (2012).
[Crossref]

IEEE Trans. Electron. Dev. (1)

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[Crossref]

J. Appl. Phys. (2)

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

K. M. Yeung, W. S. Tsang, C. L. Mak, and K. H. Wong, “Optical studies of ZnS:Mn films grown by pulsed laser deposition,” J. Appl. Phys. 92(7), 3636–3640 (2002).
[Crossref]

Jpn. J. Appl. Phys. (1)

S. Nakamura, T. Mukai, and M. Senon, “High-power GaN p-n junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998–L2001 (1991).
[Crossref]

Nanoscale Res. Lett. (1)

Y. Y. Gong, T. Andelman, G. F. Neumark, S. O’Brien, and I. L. Kuskovsky, “Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification,” Nanoscale Res. Lett. 2(6), 297–302 (2007).
[Crossref]

Opt. Express (2)

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Figures (5)

Fig. 1
Fig. 1 Schematic diagram of LEDs (a) without interlayer and with (b) ZnS and (c) AlN.

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Fig. 2
Fig. 2 (a) I-V curves and (b) XRD pattern of the LED devices. The inset in Fig. 2(a) shows the I-V curves of Pt/Ni and Pt/Ti ohmic contact on p-GaN and n-ZnO.

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Fig. 3
Fig. 3 (a) PL spectra of p-GaN and n-ZnO films. (b) EL spectra of n-ZnO/p-GaN LED. Inserted schematic shows the band diagram of the n-ZnO/p-GaN heterojunction.

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Fig. 4
Fig. 4 EL spectrum of (a) n-ZnO/ZnS/p-GaN and (b) n-ZnO/AlN/p-GaN heterojunction LED. (c) The FWHM of EL spectra of two LEDs with different injection currents. (d) The EL integrated intensity of two LEDs as a function of the input power.

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Fig. 5
Fig. 5 Gaussian deconvolution for EL spectra of the n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN heterojunction diodes. Insets show the energy band diagram of heterojunction LEDs.

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