Abstract

The n-ZnO/p-Si heterojunction with an ultrathin Al2O3 buffer layer was prepared by atomic layer deposition. X-ray diffraction revealed that the crystalline quality of (100)-oriented ZnO films was improved with an Al2O3 buffer layer. The n-ZnO/p-Si heterojunction with 5 nm inserted Al2O3 layer shows the best electrical characteristics, with a dark current of 0.5 μA at a reverse bias of −2 V and increasing the photo-to-dark current ratio effectively by 8 times. These results demonstrated that Al2O3 buffer layer with optimized thickness exhibits significant advantages in enhancing the crystal quality of ZnO film and improving the photoelectrical properties of n-ZnO/p-Si photodetectors.

© 2014 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  26. J. B. Fedison, T. P. Chow, H. Lu, and I. B. Bhat, “Electrical characteristics of magnesium-doped gallium nitride junction diodes,” Appl. Phys. Lett. 72(22), 2841–2843 (1998).
    [Crossref]
  27. D. C. Look and R. J. Molnar, “Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements,” Appl. Phys. Lett. 70(25), 3377–3379 (1997).
    [Crossref]
  28. J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006).
    [Crossref]
  29. M. Dutta and D. Basak, “p-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism,” Appl. Phys. Lett. 92(21), 212112 (2008).
    [Crossref]
  30. W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, “Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection,” IEEE Electron Device Lett. 32(11), 1564–1566 (2011).
    [Crossref]

2014 (1)

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
[Crossref]

2013 (3)

Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
[Crossref] [PubMed]

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

P. Köç, S. Tekmen, A. Baltakesmez, S. Tüzemen, K. Meral, and Y. Onganer, “Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition,” AIP Adv. 3(12), 122107 (2013).
[Crossref]

2012 (4)

D. S. Tasi, C. F. Kang, H. H. Wang, C. A. Lin, J. J. Ke, Y. H. Chu, and J. H. He, “n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection,” Opt. Lett. 37(6), 1112–1114 (2012).
[Crossref] [PubMed]

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

T. Wang, H. Wu, C. Chen, and C. Liu, “Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers,” Appl. Phys. Lett. 100(1), 011901 (2012).
[Crossref]

S. Bang, S. Lee, Y. Ko, J. Park, S. Shin, H. Seo, and H. Jeon, “Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition,” Nanoscale Res. Lett. 7(1), 290 (2012).
[Crossref] [PubMed]

2011 (3)

W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, “Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection,” IEEE Electron Device Lett. 32(11), 1564–1566 (2011).
[Crossref]

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

D. C. Kim, B. O. Jung, J. H. Lee, H. K. Cho, J. Y. Lee, and J. H. Lee, “Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers,” Nanotechnology 22(26), 265506 (2011).
[Crossref] [PubMed]

2010 (1)

A. E. Rakhshani, “Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si,” J. Appl. Phys. 108(9), 094502 (2010).
[Crossref]

2009 (3)

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature,” Appl. Phys. Lett. 94(1), 013503 (2009).
[Crossref]

S. Y. Liu, T. Chen, Y. L. Jiang, G. P. Ru, and X. P. Qu, “The effect of post-annealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction,” J. Appl. Phys. 105(11), 114504 (2009).
[Crossref]

2008 (2)

S. Y. Pung, K. L. Choy, X. Hou, and C. Shan, “Preferential growth of ZnO thin films by the atomic layer deposition technique,” Nanotechnology 19(43), 435609 (2008).
[Crossref] [PubMed]

M. Dutta and D. Basak, “p-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism,” Appl. Phys. Lett. 92(21), 212112 (2008).
[Crossref]

2007 (1)

S. Mridha and D. Basak, “Ultraviolet and visible photoresponse properties of n‐ZnO/p‐Si heterojunction,” J. Appl. Phys. 101(8), 083102 (2007).
[Crossref]

2006 (1)

J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006).
[Crossref]

2005 (3)

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

L. Wang, Y. Pu, Y. F. Chen, C. L. Mo, W. Q. Fang, C. B. Xiong, J. N. Dai, and F. Y. Jiang, “MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer,” J. Cryst. Growth 284(3–4), 459–463 (2005).
[Crossref]

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

2003 (1)

S. Jeong, J. H. Kim, and S. Im, “Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure,” Appl. Phys. Lett. 83(14), 2946–2948 (2003).
[Crossref]

2001 (2)

A. Nahhas, H. K. Kim, and J. Blachere, “Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer,” Appl. Phys. Lett. 78(11), 1511–1513 (2001).
[Crossref]

D. C. Look, “Recent advances in ZnO materials and devices,” Mater. Sci. Eng. B 80(1–3), 383–387 (2001).
[Crossref]

2000 (1)

C. G. Van de Walle, “Hydrogen as a cause of doping in zinc oxide,” Phys. Rev. Lett. 85(5), 1012–1015 (2000).
[Crossref] [PubMed]

1998 (1)

J. B. Fedison, T. P. Chow, H. Lu, and I. B. Bhat, “Electrical characteristics of magnesium-doped gallium nitride junction diodes,” Appl. Phys. Lett. 72(22), 2841–2843 (1998).
[Crossref]

1997 (1)

D. C. Look and R. J. Molnar, “Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements,” Appl. Phys. Lett. 70(25), 3377–3379 (1997).
[Crossref]

Alivov, Y. I.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Alivov, Ya. I.

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

Avrutin, V.

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Baltakesmez, A.

P. Köç, S. Tekmen, A. Baltakesmez, S. Tüzemen, K. Meral, and Y. Onganer, “Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition,” AIP Adv. 3(12), 122107 (2013).
[Crossref]

Bang, S.

S. Bang, S. Lee, Y. Ko, J. Park, S. Shin, H. Seo, and H. Jeon, “Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition,” Nanoscale Res. Lett. 7(1), 290 (2012).
[Crossref] [PubMed]

Basak, D.

M. Dutta and D. Basak, “p-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism,” Appl. Phys. Lett. 92(21), 212112 (2008).
[Crossref]

S. Mridha and D. Basak, “Ultraviolet and visible photoresponse properties of n‐ZnO/p‐Si heterojunction,” J. Appl. Phys. 101(8), 083102 (2007).
[Crossref]

Bhat, I. B.

J. B. Fedison, T. P. Chow, H. Lu, and I. B. Bhat, “Electrical characteristics of magnesium-doped gallium nitride junction diodes,” Appl. Phys. Lett. 72(22), 2841–2843 (1998).
[Crossref]

Blachere, J.

A. Nahhas, H. K. Kim, and J. Blachere, “Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer,” Appl. Phys. Lett. 78(11), 1511–1513 (2001).
[Crossref]

Chang, S. L.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

Chen, C.

T. Wang, H. Wu, C. Chen, and C. Liu, “Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers,” Appl. Phys. Lett. 100(1), 011901 (2012).
[Crossref]

Chen, T.

S. Y. Liu, T. Chen, Y. L. Jiang, G. P. Ru, and X. P. Qu, “The effect of post-annealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction,” J. Appl. Phys. 105(11), 114504 (2009).
[Crossref]

Chen, Y. F.

L. Wang, Y. Pu, Y. F. Chen, C. L. Mo, W. Q. Fang, C. B. Xiong, J. N. Dai, and F. Y. Jiang, “MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer,” J. Cryst. Growth 284(3–4), 459–463 (2005).
[Crossref]

Chiu, S. H.

W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, “Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection,” IEEE Electron Device Lett. 32(11), 1564–1566 (2011).
[Crossref]

Cho, H. K.

D. C. Kim, B. O. Jung, J. H. Lee, H. K. Cho, J. Y. Lee, and J. H. Lee, “Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers,” Nanotechnology 22(26), 265506 (2011).
[Crossref] [PubMed]

Cho, S. J.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Chow, T. P.

J. B. Fedison, T. P. Chow, H. Lu, and I. B. Bhat, “Electrical characteristics of magnesium-doped gallium nitride junction diodes,” Appl. Phys. Lett. 72(22), 2841–2843 (1998).
[Crossref]

Choy, K. L.

S. Y. Pung, K. L. Choy, X. Hou, and C. Shan, “Preferential growth of ZnO thin films by the atomic layer deposition technique,” Nanotechnology 19(43), 435609 (2008).
[Crossref] [PubMed]

Chu, Y. H.

Dai, J. N.

L. Wang, Y. Pu, Y. F. Chen, C. L. Mo, W. Q. Fang, C. B. Xiong, J. N. Dai, and F. Y. Jiang, “MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer,” J. Cryst. Growth 284(3–4), 459–463 (2005).
[Crossref]

Ding, S. J.

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
[Crossref]

Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
[Crossref] [PubMed]

Dogan, S.

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Dong, X.

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

Du, G. T.

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

Du, X. L.

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

Dutta, M.

M. Dutta and D. Basak, “p-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism,” Appl. Phys. Lett. 92(21), 212112 (2008).
[Crossref]

Fan, J. C.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

Fan, Q.

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

Fang, G.

H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature,” Appl. Phys. Lett. 94(1), 013503 (2009).
[Crossref]

Fang, W. Q.

L. Wang, Y. Pu, Y. F. Chen, C. L. Mo, W. Q. Fang, C. B. Xiong, J. N. Dai, and F. Y. Jiang, “MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer,” J. Cryst. Growth 284(3–4), 459–463 (2005).
[Crossref]

Fedison, J. B.

J. B. Fedison, T. P. Chow, H. Lu, and I. B. Bhat, “Electrical characteristics of magnesium-doped gallium nitride junction diodes,” Appl. Phys. Lett. 72(22), 2841–2843 (1998).
[Crossref]

Geng, Y.

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
[Crossref]

Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
[Crossref] [PubMed]

Gu, C. Z.

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

Gu, S. L.

J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006).
[Crossref]

Gu, Y. Z.

Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
[Crossref] [PubMed]

Guo, Y.

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

He, J. H.

D. S. Tasi, C. F. Kang, H. H. Wang, C. A. Lin, J. J. Ke, Y. H. Chu, and J. H. He, “n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection,” Opt. Lett. 37(6), 1112–1114 (2012).
[Crossref] [PubMed]

W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, “Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection,” IEEE Electron Device Lett. 32(11), 1564–1566 (2011).
[Crossref]

Hong, M.

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

Hou, X.

S. Y. Pung, K. L. Choy, X. Hou, and C. Shan, “Preferential growth of ZnO thin films by the atomic layer deposition technique,” Nanotechnology 19(43), 435609 (2008).
[Crossref] [PubMed]

Hsieh, W. F.

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

Hsu, C.-H.

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

Huang, H.

H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature,” Appl. Phys. Lett. 94(1), 013503 (2009).
[Crossref]

Im, S.

S. Jeong, J. H. Kim, and S. Im, “Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure,” Appl. Phys. Lett. 83(14), 2946–2948 (2003).
[Crossref]

Jeon, H.

S. Bang, S. Lee, Y. Ko, J. Park, S. Shin, H. Seo, and H. Jeon, “Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition,” Nanoscale Res. Lett. 7(1), 290 (2012).
[Crossref] [PubMed]

Jeong, S.

S. Jeong, J. H. Kim, and S. Im, “Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure,” Appl. Phys. Lett. 83(14), 2946–2948 (2003).
[Crossref]

Jiang, F. Y.

L. Wang, Y. Pu, Y. F. Chen, C. L. Mo, W. Q. Fang, C. B. Xiong, J. N. Dai, and F. Y. Jiang, “MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer,” J. Cryst. Growth 284(3–4), 459–463 (2005).
[Crossref]

Jiang, Y. L.

S. Y. Liu, T. Chen, Y. L. Jiang, G. P. Ru, and X. P. Qu, “The effect of post-annealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction,” J. Appl. Phys. 105(11), 114504 (2009).
[Crossref]

Johnstone, D.

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

Jung, B. O.

D. C. Kim, B. O. Jung, J. H. Lee, H. K. Cho, J. Y. Lee, and J. H. Lee, “Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers,” Nanotechnology 22(26), 265506 (2011).
[Crossref] [PubMed]

Kang, C. F.

Ke, J. J.

Kim, D. C.

D. C. Kim, B. O. Jung, J. H. Lee, H. K. Cho, J. Y. Lee, and J. H. Lee, “Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers,” Nanotechnology 22(26), 265506 (2011).
[Crossref] [PubMed]

Kim, H. K.

A. Nahhas, H. K. Kim, and J. Blachere, “Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer,” Appl. Phys. Lett. 78(11), 1511–1513 (2001).
[Crossref]

Kim, J. H.

S. Jeong, J. H. Kim, and S. Im, “Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure,” Appl. Phys. Lett. 83(14), 2946–2948 (2003).
[Crossref]

Ko, Y.

S. Bang, S. Lee, Y. Ko, J. Park, S. Shin, H. Seo, and H. Jeon, “Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition,” Nanoscale Res. Lett. 7(1), 290 (2012).
[Crossref] [PubMed]

Köç, P.

P. Köç, S. Tekmen, A. Baltakesmez, S. Tüzemen, K. Meral, and Y. Onganer, “Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition,” AIP Adv. 3(12), 122107 (2013).
[Crossref]

Kuo, C. C.

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

Kwo, J.

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

Lee, J. H.

D. C. Kim, B. O. Jung, J. H. Lee, H. K. Cho, J. Y. Lee, and J. H. Lee, “Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers,” Nanotechnology 22(26), 265506 (2011).
[Crossref] [PubMed]

D. C. Kim, B. O. Jung, J. H. Lee, H. K. Cho, J. Y. Lee, and J. H. Lee, “Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers,” Nanotechnology 22(26), 265506 (2011).
[Crossref] [PubMed]

Lee, J. Y.

D. C. Kim, B. O. Jung, J. H. Lee, H. K. Cho, J. Y. Lee, and J. H. Lee, “Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers,” Nanotechnology 22(26), 265506 (2011).
[Crossref] [PubMed]

Lee, S.

S. Bang, S. Lee, Y. Ko, J. Park, S. Shin, H. Seo, and H. Jeon, “Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition,” Nanoscale Res. Lett. 7(1), 290 (2012).
[Crossref] [PubMed]

Lee, W. C.

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

Lee, Y. J.

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

Lien, W. C.

W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, “Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection,” IEEE Electron Device Lett. 32(11), 1564–1566 (2011).
[Crossref]

Lin, B. H.

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

Lin, C. A.

Liu, C.

T. Wang, H. Wu, C. Chen, and C. Liu, “Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers,” Appl. Phys. Lett. 100(1), 011901 (2012).
[Crossref]

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Liu, S. M.

J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006).
[Crossref]

Liu, S. Y.

S. Y. Liu, T. Chen, Y. L. Jiang, G. P. Ru, and X. P. Qu, “The effect of post-annealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction,” J. Appl. Phys. 105(11), 114504 (2009).
[Crossref]

Liu, W.

J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006).
[Crossref]

Liu, W. R.

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

Look, D. C.

D. C. Look, “Recent advances in ZnO materials and devices,” Mater. Sci. Eng. B 80(1–3), 383–387 (2001).
[Crossref]

D. C. Look and R. J. Molnar, “Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements,” Appl. Phys. Lett. 70(25), 3377–3379 (1997).
[Crossref]

Lu, H.

J. B. Fedison, T. P. Chow, H. Lu, and I. B. Bhat, “Electrical characteristics of magnesium-doped gallium nitride junction diodes,” Appl. Phys. Lett. 72(22), 2841–2843 (1998).
[Crossref]

Lu, H. L.

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
[Crossref]

Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
[Crossref] [PubMed]

Maboudian, R.

W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, “Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection,” IEEE Electron Device Lett. 32(11), 1564–1566 (2011).
[Crossref]

Mei, Z. X.

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

Meral, K.

P. Köç, S. Tekmen, A. Baltakesmez, S. Tüzemen, K. Meral, and Y. Onganer, “Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition,” AIP Adv. 3(12), 122107 (2013).
[Crossref]

Mo, C. L.

L. Wang, Y. Pu, Y. F. Chen, C. L. Mo, W. Q. Fang, C. B. Xiong, J. N. Dai, and F. Y. Jiang, “MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer,” J. Cryst. Growth 284(3–4), 459–463 (2005).
[Crossref]

Molnar, R. J.

D. C. Look and R. J. Molnar, “Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements,” Appl. Phys. Lett. 70(25), 3377–3379 (1997).
[Crossref]

Morkoc, H.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Morkoç, H.

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

Mridha, S.

S. Mridha and D. Basak, “Ultraviolet and visible photoresponse properties of n‐ZnO/p‐Si heterojunction,” J. Appl. Phys. 101(8), 083102 (2007).
[Crossref]

Nahhas, A.

A. Nahhas, H. K. Kim, and J. Blachere, “Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer,” Appl. Phys. Lett. 78(11), 1511–1513 (2001).
[Crossref]

Onganer, Y.

P. Köç, S. Tekmen, A. Baltakesmez, S. Tüzemen, K. Meral, and Y. Onganer, “Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition,” AIP Adv. 3(12), 122107 (2013).
[Crossref]

Onojima, N.

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

Özgur, U.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Özgür, Ü.

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

Park, J.

S. Bang, S. Lee, Y. Ko, J. Park, S. Shin, H. Seo, and H. Jeon, “Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition,” Nanoscale Res. Lett. 7(1), 290 (2012).
[Crossref] [PubMed]

Pisano, A. P.

W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, “Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection,” IEEE Electron Device Lett. 32(11), 1564–1566 (2011).
[Crossref]

Pu, Y.

L. Wang, Y. Pu, Y. F. Chen, C. L. Mo, W. Q. Fang, C. B. Xiong, J. N. Dai, and F. Y. Jiang, “MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer,” J. Cryst. Growth 284(3–4), 459–463 (2005).
[Crossref]

Pung, S. Y.

S. Y. Pung, K. L. Choy, X. Hou, and C. Shan, “Preferential growth of ZnO thin films by the atomic layer deposition technique,” Nanotechnology 19(43), 435609 (2008).
[Crossref] [PubMed]

Qu, X. P.

S. Y. Liu, T. Chen, Y. L. Jiang, G. P. Ru, and X. P. Qu, “The effect of post-annealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction,” J. Appl. Phys. 105(11), 114504 (2009).
[Crossref]

Rakhshani, A. E.

A. E. Rakhshani, “Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si,” J. Appl. Phys. 108(9), 094502 (2010).
[Crossref]

Rao, K. V.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

Reshchikov, M. A.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Ru, G. P.

S. Y. Liu, T. Chen, Y. L. Jiang, G. P. Ru, and X. P. Qu, “The effect of post-annealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction,” J. Appl. Phys. 105(11), 114504 (2009).
[Crossref]

Senesky, D. G.

W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, “Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection,” IEEE Electron Device Lett. 32(11), 1564–1566 (2011).
[Crossref]

Seo, H.

S. Bang, S. Lee, Y. Ko, J. Park, S. Shin, H. Seo, and H. Jeon, “Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition,” Nanoscale Res. Lett. 7(1), 290 (2012).
[Crossref] [PubMed]

Shan, C.

S. Y. Pung, K. L. Choy, X. Hou, and C. Shan, “Preferential growth of ZnO thin films by the atomic layer deposition technique,” Nanotechnology 19(43), 435609 (2008).
[Crossref] [PubMed]

Shi, Y.

J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006).
[Crossref]

Shi, Z. F.

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

Shin, S.

S. Bang, S. Lee, Y. Ko, J. Park, S. Shin, H. Seo, and H. Jeon, “Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition,” Nanoscale Res. Lett. 7(1), 290 (2012).
[Crossref] [PubMed]

Sreekanth, K. M.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

Sun, Q. Q.

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
[Crossref]

Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
[Crossref] [PubMed]

Tasi, D. S.

Teke, A.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Tekmen, S.

P. Köç, S. Tekmen, A. Baltakesmez, S. Tüzemen, K. Meral, and Y. Onganer, “Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition,” AIP Adv. 3(12), 122107 (2013).
[Crossref]

Tsai, D. S.

W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, “Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection,” IEEE Electron Device Lett. 32(11), 1564–1566 (2011).
[Crossref]

Tüzemen, S.

P. Köç, S. Tekmen, A. Baltakesmez, S. Tüzemen, K. Meral, and Y. Onganer, “Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition,” AIP Adv. 3(12), 122107 (2013).
[Crossref]

Van de Walle, C. G.

C. G. Van de Walle, “Hydrogen as a cause of doping in zinc oxide,” Phys. Rev. Lett. 85(5), 1012–1015 (2000).
[Crossref] [PubMed]

Wang, C.

H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature,” Appl. Phys. Lett. 94(1), 013503 (2009).
[Crossref]

Wang, H.

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

Wang, H. H.

Wang, J.

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

Wang, L.

L. Wang, Y. Pu, Y. F. Chen, C. L. Mo, W. Q. Fang, C. B. Xiong, J. N. Dai, and F. Y. Jiang, “MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer,” J. Cryst. Growth 284(3–4), 459–463 (2005).
[Crossref]

Wang, P. F.

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
[Crossref]

Wang, T.

T. Wang, H. Wu, C. Chen, and C. Liu, “Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers,” Appl. Phys. Lett. 100(1), 011901 (2012).
[Crossref]

Wu, H.

T. Wang, H. Wu, C. Chen, and C. Liu, “Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers,” Appl. Phys. Lett. 100(1), 011901 (2012).
[Crossref]

Xia, X. C.

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

Xie, J.

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

Xie, Z.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

Xie, Z. Y.

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
[Crossref]

Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
[Crossref] [PubMed]

Xiong, C. B.

L. Wang, Y. Pu, Y. F. Chen, C. L. Mo, W. Q. Fang, C. B. Xiong, J. N. Dai, and F. Y. Jiang, “MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer,” J. Cryst. Growth 284(3–4), 459–463 (2005).
[Crossref]

Yang, M.

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
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B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
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Yang, X.

H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature,” Appl. Phys. Lett. 94(1), 013503 (2009).
[Crossref]

Ye, J. D.

J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006).
[Crossref]

Ye, Z. Y.

Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
[Crossref] [PubMed]

Yin, W.

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

Yuan, L.

H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature,” Appl. Phys. Lett. 94(1), 013503 (2009).
[Crossref]

Zhang, B. L.

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

Zhang, D. W.

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
[Crossref]

Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
[Crossref] [PubMed]

Zhang, R.

J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006).
[Crossref]

Zhang, S. K.

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

Zhang, T. C.

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

Zhang, Y.

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
[Crossref]

Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
[Crossref] [PubMed]

Zhao, L.

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

Zhao, X.

H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature,” Appl. Phys. Lett. 94(1), 013503 (2009).
[Crossref]

Zheng, Y. D.

J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006).
[Crossref]

Zhou, C.

H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature,” Appl. Phys. Lett. 94(1), 013503 (2009).
[Crossref]

Zhou, H.

H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature,” Appl. Phys. Lett. 94(1), 013503 (2009).
[Crossref]

Zhu, S. M.

J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006).
[Crossref]

AIP Adv. (1)

P. Köç, S. Tekmen, A. Baltakesmez, S. Tüzemen, K. Meral, and Y. Onganer, “Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition,” AIP Adv. 3(12), 122107 (2013).
[Crossref]

Appl. Phys. Lett. (12)

Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma assisted molecular-beam epitaxy,” Appl. Phys. Lett. 86(24), 241108 (2005).
[Crossref]

Z. F. Shi, X. C. Xia, W. Yin, S. K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes,” Appl. Phys. Lett. 100(10), 101112 (2012).
[Crossref]

H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, “Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature,” Appl. Phys. Lett. 94(1), 013503 (2009).
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T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

H. L. Lu, M. Yang, Z. Y. Xie, Y. Geng, Y. Zhang, P. F. Wang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers,” Appl. Phys. Lett. 104(16), 161602 (2014).
[Crossref]

T. Wang, H. Wu, C. Chen, and C. Liu, “Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers,” Appl. Phys. Lett. 100(1), 011901 (2012).
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M. Dutta and D. Basak, “p-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism,” Appl. Phys. Lett. 92(21), 212112 (2008).
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Cryst. Growth Des. (1)

B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of an epitaxial ZnO film on Si(111) with a Gd2O3(Ga2O3) buffer layer,” Cryst. Growth Des. 11(7), 2846–2851 (2011).
[Crossref]

IEEE Electron Device Lett. (1)

W. C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, “Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection,” IEEE Electron Device Lett. 32(11), 1564–1566 (2011).
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J. Appl. Phys. (4)

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J. Cryst. Growth (1)

L. Wang, Y. Pu, Y. F. Chen, C. L. Mo, W. Q. Fang, C. B. Xiong, J. N. Dai, and F. Y. Jiang, “MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer,” J. Cryst. Growth 284(3–4), 459–463 (2005).
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S. Bang, S. Lee, Y. Ko, J. Park, S. Shin, H. Seo, and H. Jeon, “Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition,” Nanoscale Res. Lett. 7(1), 290 (2012).
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Z. Y. Ye, H. L. Lu, Y. Geng, Y. Z. Gu, Z. Y. Xie, Y. Zhang, Q. Q. Sun, S. J. Ding, and D. W. Zhang, “Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition,” Nanoscale Res. Lett. 8(1), 108 (2013).
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Opt. Lett. (1)

Phys. Rev. Lett. (1)

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Prog. Mater. Sci. (1)

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
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Figures (4)

Fig. 1
Fig. 1 (a) Experimental (open symbol) and calculated (solid line) ellipsometric spectra (cosΔ and tanψ) of n-ZnO/5 nm Al2O3/p-Si heterojunction. (b) High-resolution TEM image of the n-ZnO/5 nm Al2O3/p-Si heterojunction.
Fig. 2
Fig. 2 XRD patterns of n-ZnO/Al2O3/p-Si heterojunctions with different Al2O3 thicknesses.
Fig. 3
Fig. 3 (a) I-V characteristics of the n-ZnO/Al2O3/p-Si heterojunctions with different Al2O3 thicknesses at a reverse bias. The inset shows the linear I-V characteristic of the n-ZnO/p-Si heterojunction. (b) A log-log I-V plot of the n-ZnO/5 nm Al2O3/p-Si heterojunction under forward bias.
Fig. 4
Fig. 4 I−V curves of the n-ZnO/5 nm Al2O3/p-Si and n-ZnO/p-Si photodetectors measured in the dark and under the 365 nm UV illumination.

Tables (1)

Tables Icon

Table 1 The Nominal and Actual Layer Thicknesses of n-ZnO/Al2O3 Samples Grown on p-Si(100)

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

α=(8π/3h) ( m h × ε s ) 1/2 N D /[ N A 1/2 ( N A + N D )]
PDCR=( I p I d )/ I d

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