Abstract

We report on a novel combination of measurement techniques for evaluating dimensional and compositional changes of selective-area-grown multiple-quantum-well laser diodes (SAG MQW LDs). This technique is based on C-V and I-V measurements of the fully fabricated LDs. Using this technique, the changes in the capacitance and voltage correspond to the layer thickness and bandgap energy. To verify the effectiveness of the proposed technique, we first fabricated an LD array containing ten different SAG MQW structures, and examined the effects of the dimensional and compositional changes on the wavelength shift both theoretically and experimentally. From our examination, we found that a wavelength shift of 83 nm is obtained for an SAG mask pattern with an opening width of 100 μm, and that a cross point between both dimensional and compositional changes exists for this mask pattern. As the following step, the fabricated LD array was tested using the proposed technique, and the growth rate enhancement and bandgap energy were extracted from the measured C-V and I-V results. The extracted data for each array channel were compared with the simulation results, which were well-fitted from the photo-luminescence (PL) measurements. They both show good agreement with the simulation results.

© 2014 Optical Society of America

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References

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  1. A. K. Dutta, N. K. Dutta, and M. Fujiwara, WDM Technologies: Active Optical Components (Academic, 2002), Chap. 10.
  2. M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
    [Crossref]
  3. T. Fujii, M. Ekawa, and S. Yamzaki, “Growth pressure dependence of selective area metalorganic vapor phase epitaxy on planar patterned substrates,” J. Cryst. Growth 156(1-2), 59–66 (1995).
    [Crossref]
  4. J. H. Song, K. Kim, Y. A. Leem, H. J. Kim, and G. Kim, “Strain-controlled selective-area growth of InGaAsP films on InP,” Jpn. J. Appl. Phys. 46(33), L783–L785 (2007).
    [Crossref]
  5. N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
    [Crossref]
  6. Y. Morishima, J. Yaguchi, A. Mukai, T. Ohgoh, and H. Asano, “Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth,” Electron. Lett. 45(10), 521–522 (2009).
    [Crossref]
  7. Y. Shimogaki, M. Sugiyama, and Y. Nakano, “Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs,” IPRM2013, May 19 - 23, 2013, Kobe, Japan MoD4–1.
    [Crossref]
  8. C. Zhang, S. Liang, H. Zhu, L. Han, and W. Wang, “Multichannel DFB laser arrays fabricated by upper SCH layer SAG technique,” IEEE J. Quantum Electron. 50(2), 92–97 (2014).
    [Crossref]
  9. O. K. Kwon, Y. A. Leem, Y. T. Han, C. W. Lee, K. S. Kim, and S. H. Oh, “A 10 × 10 Gb/s DFB laser diode array fabricated using a SAG technique,” Opt. Express 22(8), 9073–9080 (2014).
    [Crossref] [PubMed]
  10. Y. Suematsu and A. R. Adams, Handbook of Semiconductor Lasers and Photonic Integrated Circuits (Chapman & Hall, 1994), Chap. 3.
  11. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815–5875 (2001).
    [Crossref]
  12. S. L. Chuang, “Efficient band-structure calculations of strained quantum wells,” Phys. Rev. B Condens. Matter 43(12), 9649–9661 (1991).
    [Crossref] [PubMed]
  13. D. Ban, E. H. Sargent, K. Hinzer, St. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White, “Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy,” Appl. Phys. Lett. 82(23), 4166–4168 (2003).
    [Crossref]

2014 (2)

C. Zhang, S. Liang, H. Zhu, L. Han, and W. Wang, “Multichannel DFB laser arrays fabricated by upper SCH layer SAG technique,” IEEE J. Quantum Electron. 50(2), 92–97 (2014).
[Crossref]

O. K. Kwon, Y. A. Leem, Y. T. Han, C. W. Lee, K. S. Kim, and S. H. Oh, “A 10 × 10 Gb/s DFB laser diode array fabricated using a SAG technique,” Opt. Express 22(8), 9073–9080 (2014).
[Crossref] [PubMed]

2009 (1)

Y. Morishima, J. Yaguchi, A. Mukai, T. Ohgoh, and H. Asano, “Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth,” Electron. Lett. 45(10), 521–522 (2009).
[Crossref]

2008 (1)

N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
[Crossref]

2007 (1)

J. H. Song, K. Kim, Y. A. Leem, H. J. Kim, and G. Kim, “Strain-controlled selective-area growth of InGaAsP films on InP,” Jpn. J. Appl. Phys. 46(33), L783–L785 (2007).
[Crossref]

2003 (1)

D. Ban, E. H. Sargent, K. Hinzer, St. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White, “Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy,” Appl. Phys. Lett. 82(23), 4166–4168 (2003).
[Crossref]

2001 (1)

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815–5875 (2001).
[Crossref]

1995 (1)

T. Fujii, M. Ekawa, and S. Yamzaki, “Growth pressure dependence of selective area metalorganic vapor phase epitaxy on planar patterned substrates,” J. Cryst. Growth 156(1-2), 59–66 (1995).
[Crossref]

1993 (1)

M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
[Crossref]

1991 (1)

S. L. Chuang, “Efficient band-structure calculations of strained quantum wells,” Phys. Rev. B Condens. Matter 43(12), 9649–9661 (1991).
[Crossref] [PubMed]

Aoki, M.

M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
[Crossref]

Asano, H.

Y. Morishima, J. Yaguchi, A. Mukai, T. Ohgoh, and H. Asano, “Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth,” Electron. Lett. 45(10), 521–522 (2009).
[Crossref]

Ban, D.

D. Ban, E. H. Sargent, K. Hinzer, St. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White, “Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy,” Appl. Phys. Lett. 82(23), 4166–4168 (2003).
[Crossref]

Chuang, S. L.

S. L. Chuang, “Efficient band-structure calculations of strained quantum wells,” Phys. Rev. B Condens. Matter 43(12), 9649–9661 (1991).
[Crossref] [PubMed]

Décobert, J.

N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
[Crossref]

Dixon-Warren, St. J.

D. Ban, E. H. Sargent, K. Hinzer, St. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White, “Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy,” Appl. Phys. Lett. 82(23), 4166–4168 (2003).
[Crossref]

Dupuis, N.

N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
[Crossref]

Ekawa, M.

T. Fujii, M. Ekawa, and S. Yamzaki, “Growth pressure dependence of selective area metalorganic vapor phase epitaxy on planar patterned substrates,” J. Cryst. Growth 156(1-2), 59–66 (1995).
[Crossref]

Fujii, T.

T. Fujii, M. Ekawa, and S. Yamzaki, “Growth pressure dependence of selective area metalorganic vapor phase epitaxy on planar patterned substrates,” J. Cryst. Growth 156(1-2), 59–66 (1995).
[Crossref]

Han, L.

C. Zhang, S. Liang, H. Zhu, L. Han, and W. Wang, “Multichannel DFB laser arrays fabricated by upper SCH layer SAG technique,” IEEE J. Quantum Electron. 50(2), 92–97 (2014).
[Crossref]

Han, Y. T.

Hinzer, K.

D. Ban, E. H. Sargent, K. Hinzer, St. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White, “Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy,” Appl. Phys. Lett. 82(23), 4166–4168 (2003).
[Crossref]

Ido, T.

M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
[Crossref]

Kawano, T.

M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
[Crossref]

Kazmierski, C.

N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
[Crossref]

Kim, G.

J. H. Song, K. Kim, Y. A. Leem, H. J. Kim, and G. Kim, “Strain-controlled selective-area growth of InGaAsP films on InP,” Jpn. J. Appl. Phys. 46(33), L783–L785 (2007).
[Crossref]

Kim, H. J.

J. H. Song, K. Kim, Y. A. Leem, H. J. Kim, and G. Kim, “Strain-controlled selective-area growth of InGaAsP films on InP,” Jpn. J. Appl. Phys. 46(33), L783–L785 (2007).
[Crossref]

Kim, K.

J. H. Song, K. Kim, Y. A. Leem, H. J. Kim, and G. Kim, “Strain-controlled selective-area growth of InGaAsP films on InP,” Jpn. J. Appl. Phys. 46(33), L783–L785 (2007).
[Crossref]

Kim, K. S.

Kwon, O. K.

Lagay, N.

N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
[Crossref]

Lagrée, P.-Y.

N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
[Crossref]

Lee, C. W.

Leem, Y. A.

O. K. Kwon, Y. A. Leem, Y. T. Han, C. W. Lee, K. S. Kim, and S. H. Oh, “A 10 × 10 Gb/s DFB laser diode array fabricated using a SAG technique,” Opt. Express 22(8), 9073–9080 (2014).
[Crossref] [PubMed]

J. H. Song, K. Kim, Y. A. Leem, H. J. Kim, and G. Kim, “Strain-controlled selective-area growth of InGaAsP films on InP,” Jpn. J. Appl. Phys. 46(33), L783–L785 (2007).
[Crossref]

Liang, S.

C. Zhang, S. Liang, H. Zhu, L. Han, and W. Wang, “Multichannel DFB laser arrays fabricated by upper SCH layer SAG technique,” IEEE J. Quantum Electron. 50(2), 92–97 (2014).
[Crossref]

Meyer, J. R.

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815–5875 (2001).
[Crossref]

Morishima, Y.

Y. Morishima, J. Yaguchi, A. Mukai, T. Ohgoh, and H. Asano, “Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth,” Electron. Lett. 45(10), 521–522 (2009).
[Crossref]

Mukai, A.

Y. Morishima, J. Yaguchi, A. Mukai, T. Ohgoh, and H. Asano, “Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth,” Electron. Lett. 45(10), 521–522 (2009).
[Crossref]

Oh, S. H.

Ohgoh, T.

Y. Morishima, J. Yaguchi, A. Mukai, T. Ohgoh, and H. Asano, “Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth,” Electron. Lett. 45(10), 521–522 (2009).
[Crossref]

Ougazzaden, A.

N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
[Crossref]

Poingt, F.

N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
[Crossref]

Ramdane, A.

N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
[Crossref]

Ram-Mohan, L. R.

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815–5875 (2001).
[Crossref]

Sano, H.

M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
[Crossref]

Sargent, E. H.

D. Ban, E. H. Sargent, K. Hinzer, St. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White, “Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy,” Appl. Phys. Lett. 82(23), 4166–4168 (2003).
[Crossref]

Song, J. H.

J. H. Song, K. Kim, Y. A. Leem, H. J. Kim, and G. Kim, “Strain-controlled selective-area growth of InGaAsP films on InP,” Jpn. J. Appl. Phys. 46(33), L783–L785 (2007).
[Crossref]

SpringThorpe, A. J.

D. Ban, E. H. Sargent, K. Hinzer, St. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White, “Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy,” Appl. Phys. Lett. 82(23), 4166–4168 (2003).
[Crossref]

Suzuki, M.

M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
[Crossref]

Takai, A.

M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
[Crossref]

Taniwatari, T.

M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
[Crossref]

Uomi, K.

M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
[Crossref]

Vurgaftman, I.

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815–5875 (2001).
[Crossref]

Wang, W.

C. Zhang, S. Liang, H. Zhu, L. Han, and W. Wang, “Multichannel DFB laser arrays fabricated by upper SCH layer SAG technique,” IEEE J. Quantum Electron. 50(2), 92–97 (2014).
[Crossref]

White, J. K.

D. Ban, E. H. Sargent, K. Hinzer, St. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White, “Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy,” Appl. Phys. Lett. 82(23), 4166–4168 (2003).
[Crossref]

Yaguchi, J.

Y. Morishima, J. Yaguchi, A. Mukai, T. Ohgoh, and H. Asano, “Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth,” Electron. Lett. 45(10), 521–522 (2009).
[Crossref]

Yamzaki, S.

T. Fujii, M. Ekawa, and S. Yamzaki, “Growth pressure dependence of selective area metalorganic vapor phase epitaxy on planar patterned substrates,” J. Cryst. Growth 156(1-2), 59–66 (1995).
[Crossref]

Zhang, C.

C. Zhang, S. Liang, H. Zhu, L. Han, and W. Wang, “Multichannel DFB laser arrays fabricated by upper SCH layer SAG technique,” IEEE J. Quantum Electron. 50(2), 92–97 (2014).
[Crossref]

Zhu, H.

C. Zhang, S. Liang, H. Zhu, L. Han, and W. Wang, “Multichannel DFB laser arrays fabricated by upper SCH layer SAG technique,” IEEE J. Quantum Electron. 50(2), 92–97 (2014).
[Crossref]

Appl. Phys. Lett. (1)

D. Ban, E. H. Sargent, K. Hinzer, St. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White, “Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy,” Appl. Phys. Lett. 82(23), 4166–4168 (2003).
[Crossref]

Electron. Lett. (1)

Y. Morishima, J. Yaguchi, A. Mukai, T. Ohgoh, and H. Asano, “Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth,” Electron. Lett. 45(10), 521–522 (2009).
[Crossref]

IEEE J. Quantum Electron. (2)

C. Zhang, S. Liang, H. Zhu, L. Han, and W. Wang, “Multichannel DFB laser arrays fabricated by upper SCH layer SAG technique,” IEEE J. Quantum Electron. 50(2), 92–97 (2014).
[Crossref]

M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD,” IEEE J. Quantum Electron. 29(6), 2088–2096 (1993).
[Crossref]

J. Appl. Phys. (2)

N. Dupuis, J. Décobert, P.-Y. Lagrée, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, and A. Ougazzaden, “Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis,” J. Appl. Phys. 103(11), 113113 (2008).
[Crossref]

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815–5875 (2001).
[Crossref]

J. Cryst. Growth (1)

T. Fujii, M. Ekawa, and S. Yamzaki, “Growth pressure dependence of selective area metalorganic vapor phase epitaxy on planar patterned substrates,” J. Cryst. Growth 156(1-2), 59–66 (1995).
[Crossref]

Jpn. J. Appl. Phys. (1)

J. H. Song, K. Kim, Y. A. Leem, H. J. Kim, and G. Kim, “Strain-controlled selective-area growth of InGaAsP films on InP,” Jpn. J. Appl. Phys. 46(33), L783–L785 (2007).
[Crossref]

Opt. Express (1)

Phys. Rev. B Condens. Matter (1)

S. L. Chuang, “Efficient band-structure calculations of strained quantum wells,” Phys. Rev. B Condens. Matter 43(12), 9649–9661 (1991).
[Crossref] [PubMed]

Other (3)

Y. Suematsu and A. R. Adams, Handbook of Semiconductor Lasers and Photonic Integrated Circuits (Chapman & Hall, 1994), Chap. 3.

Y. Shimogaki, M. Sugiyama, and Y. Nakano, “Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs,” IPRM2013, May 19 - 23, 2013, Kobe, Japan MoD4–1.
[Crossref]

A. K. Dutta, N. K. Dutta, and M. Fujiwara, WDM Technologies: Active Optical Components (Academic, 2002), Chap. 10.

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Figures (11)

Fig. 1
Fig. 1 Schematic of mask patterns used for the SAG process: (a) top and (b) cross-sectional views.
Fig. 2
Fig. 2 (a) Normalized PL spectra and (b) PL peak-wavelength shifts for mask patterns with different values of Wo.
Fig. 3
Fig. 3 (a) RIn and RGa profiles along the x-axis at Wo = 100 μm and (b) their values at the center of the opened area (x = 250 μm) as a function of Wo.
Fig. 4
Fig. 4 Calculated bandgap wavelength shifts (lines) as a function of Wo for different values of (a) (D/ks)In at (D/ks)Ga = 190 μm and (b) (D/ks)Ga at (D/ks)In = 35 μm. In both figures, the crosses with error bars denote the measured PL peak-wavelength shifts shown in Fig. 2(b).
Fig. 5
Fig. 5 Calculated growth rate enhancement of SAG MQW structure RMQW at x = 250 μm under the conditions of (D/ks)In = 35 μm and (D/ks)Ga = 190 μm.
Fig. 6
Fig. 6 Dimensional and compositional wavelength shifts (Δλdim (solid) and Δλcom (dashed lines)) as functions of Wo for different values of (a) (D/ks)In at (D/ks)Ga = 190 μm and (b) (D/ks)Ga at (D/ks)In = 35 μm.
Fig. 7
Fig. 7 Dimensional and compositional energy level difference shifts (i.e., ΔEdim (solid) and ΔEcom (dashed lines)) as a function of Wo for different values of (a) (D/ks)In at (D/ks)Ga = 190 μm and (b) (D/ks)Ga at (D/ks)In = 35 μm.
Fig. 8
Fig. 8 Measured C-V curves for ten-channel SAG MQW LD array.
Fig. 9
Fig. 9 Ri,0 as a function of Wo for SAG MQW LD array (crosses with error bars) and the calculated RMQW for different values of x interval under the conditions of (D/ks)In = 35 μm and (D/ks)Ga = 190 μm (lines).
Fig. 10
Fig. 10 Measured I-V curves for ten-channel SAG MQW LD array.
Fig. 11
Fig. 11 Measured channel voltage at a current of 0.2 mA (crosses) as a function of Wo and the calculated results ΔEcom (red dashed) and ΔEg, MQW (blue solid line).

Equations (2)

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R I n G a A s P = x R I n + ( 1 x ) R G a
x = x R I n / R I n G a A s P

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