Abstract

This paper demonstrates a very compact wavelength meter for on-chip laser monitoring in the shortwave infrared wavelength range based on an optimized arrayed waveguide grating (AWG) filter with an integrated photodiode array. The AWG response is designed to obtain large nearest neighbor crosstalk (i.e. large overlap) between output channels, which allows accurately measuring the wavelength of a laser under test using the centroid detection technique. The passive AWG is fabricated on a 220 nm silicon-on-insulator (SOI) platform and is combined with GaInAsSb-based photodiodes. The photodiodes are heterogeneously integrated on the output grating couplers of the AWG using DVS-BCB adhesive bonding. The complete device with AWG and detectors has a footprint of only 2 mm2 while the measured accuracy and resolution of the detected wavelength is better than 20pm.

© 2014 Optical Society of America

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References

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  1. E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
    [Crossref] [PubMed]
  2. R. N. John, I. Read, and W. N. MacPherson, “Design considerations for a fibre Bragg grating interrogation system utilizing an arrayed waveguide grating for dynamic strain measurement,” Meas. Sci. Technol. 24(7), 075203 (2013).
    [Crossref]
  3. R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photon. Technol. Lett. 24(1), 70–72 (2012).
    [Crossref]
  4. G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
    [Crossref]
  5. M. K. Smit and C. Van Dam, “PHASAR-based WDM-devices: principles, design and applications,” IEEE J. Sel. Top. Quantum Electron. 2(2), 236–250 (1996).
    [Crossref]
  6. W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
    [Crossref]
  7. http://www.epixfab.eu/
  8. Shamsul Aarafin, “Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers,” Ph.D. dissertation, faculty of Electronics and Information Technology, Tech. Univ. Munich, Munich, Germany (2012).

2014 (1)

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

2013 (2)

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

R. N. John, I. Read, and W. N. MacPherson, “Design considerations for a fibre Bragg grating interrogation system utilizing an arrayed waveguide grating for dynamic strain measurement,” Meas. Sci. Technol. 24(7), 075203 (2013).
[Crossref]

2012 (1)

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photon. Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

2006 (1)

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

1996 (1)

M. K. Smit and C. Van Dam, “PHASAR-based WDM-devices: principles, design and applications,” IEEE J. Sel. Top. Quantum Electron. 2(2), 236–250 (1996).
[Crossref]

Baets, R.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

Beckx, S.

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

Bogaerts, W.

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

Campenhout, J. V.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Cerutti, L.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Chen, X.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Dave, U. D.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Dumon, P.

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

Gassenq, A.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Gencarelli, F.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Guan, B.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photon. Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

Hattasan, N.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Hens, Z.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Hu, C.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Jaenen, P.

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

John, R. N.

R. N. John, I. Read, and W. N. MacPherson, “Design considerations for a fibre Bragg grating interrogation system utilizing an arrayed waveguide grating for dynamic strain measurement,” Meas. Sci. Technol. 24(7), 075203 (2013).
[Crossref]

Karalar, A.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photon. Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

Kurumida, J.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photon. Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

Kuyken, B.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Leo, F.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Loo, R.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

MacPherson, W. N.

R. N. John, I. Read, and W. N. MacPherson, “Design considerations for a fibre Bragg grating interrogation system utilizing an arrayed waveguide grating for dynamic strain measurement,” Meas. Sci. Technol. 24(7), 075203 (2013).
[Crossref]

Malik, A.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Muneeb, M.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Nedeljkovic, M.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Pathak, S.

Proietti, R.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photon. Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

Read, I.

R. N. John, I. Read, and W. N. MacPherson, “Design considerations for a fibre Bragg grating interrogation system utilizing an arrayed waveguide grating for dynamic strain measurement,” Meas. Sci. Technol. 24(7), 075203 (2013).
[Crossref]

Rodriguez, J. B.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Roelkens, G.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Ryckeboer, E.

Ryckeboer, E. M. P.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Sanchez, D.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Shimura, Y.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Smit, M. K.

M. K. Smit and C. Van Dam, “PHASAR-based WDM-devices: principles, design and applications,” IEEE J. Sel. Top. Quantum Electron. 2(2), 236–250 (1996).
[Crossref]

Taillaert, D.

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

Thourhout, D. V.

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

Tournié, E.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Uvin, S.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Van Dam, C.

M. K. Smit and C. Van Dam, “PHASAR-based WDM-devices: principles, design and applications,” IEEE J. Sel. Top. Quantum Electron. 2(2), 236–250 (1996).
[Crossref]

Vincent, B.

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

Wiaux, V.

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

Wouters, J.

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

Yoo, S. J. B.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photon. Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

Yu, R.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photon. Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (3)

G. Roelkens, U. D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. M. P. Ryckeboer, D. Sanchez, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. V. Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournié, X. Chen, and M. Nedeljkovic, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8201511 (2014).
[Crossref]

M. K. Smit and C. Van Dam, “PHASAR-based WDM-devices: principles, design and applications,” IEEE J. Sel. Top. Quantum Electron. 2(2), 236–250 (1996).
[Crossref]

W. Bogaerts, P. Dumon, D. V. Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006).
[Crossref]

IEEE Photon. Technol. Lett. (1)

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photon. Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

Meas. Sci. Technol. (1)

R. N. John, I. Read, and W. N. MacPherson, “Design considerations for a fibre Bragg grating interrogation system utilizing an arrayed waveguide grating for dynamic strain measurement,” Meas. Sci. Technol. 24(7), 075203 (2013).
[Crossref]

Opt. Express (1)

Other (2)

http://www.epixfab.eu/

Shamsul Aarafin, “Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers,” Ph.D. dissertation, faculty of Electronics and Information Technology, Tech. Univ. Munich, Munich, Germany (2012).

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Figures (10)

Fig. 1
Fig. 1 Working principle of a wavelength meter where an input laser line produces measurable outputs over few channels and the laser wavelength is estimated by using the center of gravity Eq. (1).
Fig. 2
Fig. 2 Effect of NXT on the linearity of the CoG curve. The inset shows the norm of the residuals for a linear fit.
Fig. 3
Fig. 3 Schematic view of the designed AWG with layout parameter values. It is also schematically shown that the image formed on the image focal plane overlaps with a number of output apertures, which allows the accurate detection of the center of gravity of the image (and hence its wavelength).
Fig. 4
Fig. 4 Microscope image of the complete fabricated device with a zoom-in on the integrated photodiode.
Fig. 5
Fig. 5 (a) Schematic cross-section view of the photodiode showing the III-V layer stack used. (b) SEM cross-section of the fabricated photodiode.
Fig. 6
Fig. 6 Schematic of measurement setup used for characterization.
Fig. 7
Fig. 7 Response of the AWG with integrated photodiodes.
Fig. 8
Fig. 8 Calibration curve with ‘x’ marks showing the tested wavelengths and standard deviation of their detection error.
Fig. 9
Fig. 9 Detection error for a test wavelength of 2200.20nm based on 50 measurements.
Fig. 10
Fig. 10 Detection of two nearby wavelengths (2200.22nm and 2200.24nm).

Equations (1)

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CoG= i P CH_i i i P CH_i

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