Abstract

p-type Sb-doped ZnO/i-CdZnO/n-type Ga-doped ZnO was grown by dual ion beam sputtering deposition system. Current-voltage characteristics of the heterojunction showed a diode-like rectifying behavior with a turn-on voltage of ~5 V. The diode yielded blue electroluminescence emissions at around 446 nm in forward biased condition at room temperature. The emission intensity increased with the increase of the injection current. A red shifting of the emission peak position was observed with the increment of ambient temperature, indicating a change of band gap of the CdZnO active layer with temperature in low-temperature measurement.

© 2014 Optical Society of America

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  1. S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
    [Crossref]
  2. B. J. Jin, S. Im, and S. Y. Lee, “Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition,” Thin Solid Films 366(1-2), 107–110 (2000).
    [Crossref]
  3. Z. Yang, L. Li, Z. Zuo, and J. L. Liu, “Temperature-dependent photoluminescence of CdZnO thin films grown by molecular-beam epitaxy,” J. Cryst. Growth 312(1), 68–72 (2009).
    [Crossref]
  4. S. Shigemori, A. Nakamura, J. Ishihara, T. Aoki, and J. Temmyo, “Zn1-xCdxO film growth using remote plasma-enhanced metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 43(Part 2), L1088–L1090 (2004).
    [Crossref]
  5. S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, and F. Henneberger, “Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 89(20), 201907 (2006).
    [Crossref]
  6. S.-Y. Ting, H.-S. Chen, and C.-C. Yang, et al., “MBE-Grown CdZnO/ZnO Multiple Quantum-Well Light-Emitting Diode on MOCVD-Grown p-Type GaN,” IEEE Photon. Technol. Lett. 24(11), 11 (2012).
    [Crossref]
  7. J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
    [Crossref]
  8. A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, and H. Gotoh, “Full-color electroluminescence from ZnO-based heterojunction diodes,” Appl. Phys. Lett. 90(9), 093512 (2007).
    [Crossref]
  9. X. L. Guo, H. Tabata, and T. Kawai, “Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source,” J. Cryst. Growth 223(1-2), 135–139 (2001).
    [Crossref]
  10. J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 83(2), 1830 (2003).
    [Crossref]
  11. D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, “As-doped p-type ZnO produced by an evaporation/sputtering process,” Appl. Phys. Lett. 85(22), 5269 (2004).
    [Crossref]
  12. K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, “UV Electroluminescence Emission from ZnO Light‐Emitting Diodes Grown by High‐Temperature Radiofrequency Sputtering,” Appl. Phys. Lett. 83, 63 (2003).
    [Crossref]
  13. Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, “Dopant source choice for formation of p-type ZnO: Li acceptor,” Appl. Phys. Lett. 88(6), 062107 (2006).
    [Crossref]
  14. S. K. Pandey, S. Kumar Pandey, V. Awasthi, M. Gupta, U. P. Deshpande, and S. Mukherjee, “Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films,” Appl. Phys. Lett. 103(7), 072109 (2013).
    [Crossref]
  15. J. Y. Kong, S. Chu, M. Olmedo, L. Li, Z. Yang, and J. L. Liu, “Electrically pumped ultraviolet ZnO diode lasers on Si,” Appl. Phys. Lett. 93, 132113 (2008).
    [Crossref]
  16. L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu, “p-type behavior from Sb-doped ZnO heterojunction photodiodes,” Appl. Phys. Lett. 88, 092103 (2006).
    [Crossref]
  17. S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
    [Crossref]
  18. S. Verma, S. K. Pandey, M. Gupta, and S. Mukherjee, “Influence of Ion Beam Sputtering Deposition Parameters on Highly Photosensitive and Transparent CdZnO Thin Films,” J. Mater. Sci. 49(20), 6917–6929 (2014).
    [Crossref]
  19. S. S. Shinde, P. S. Shinde, Y. W. Oh, D. Haranath, C. H. Bhosale, and K. Y. Rajpure, “Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films,” Appl. Surf. Sci. 258(24), 9969–9976 (2012).
    [Crossref]
  20. B. L. Zhu, C. S. Xie, D. W. Zeng, W. L. Song, and A. H. Wang, “Investigation of gas sensitivity of Sb-doped ZnO nanoparticles,” Mater. Chem. Phys. 89(1), 148–153 (2005).
    [Crossref]
  21. T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 85, 759 (2004).
    [Crossref]
  22. Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements,” J. Appl. Phys. 94(8), 4807 (2003).
    [Crossref]
  23. X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285 (2001).
    [Crossref]
  24. R. Ferro and J. A. Rodríguez, “Influence of F-doping on the transmittance and electron affinity of CdO thin films suitable for solar cells technology,” Sol. Energy Mater. Sol. Cells 64(4), 363–370 (2000).
    [Crossref]
  25. P. Chen, X. Ma, and D. Yang, “Ultraviolet electroluminescence from ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 101, 053103 (2007).
  26. L. Li, Z. Yang, J. Y. Kong, and J. L. Liu, “Blue electroluminescence from ZnO based heterojunction diodes with CdZnO active layers,” Appl. Phys. Lett. 95(23), 232117 (2009).
    [Crossref]
  27. T. Shimomura, D. Kim, and M. Nakayama, “Optical properties of high-quality ZnO thin films grown by a sputtering method,” J. Lumin. 112(1-4), 191–195 (2005).
    [Crossref]
  28. J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, “Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures,” J. Appl. Phys. 102(11), 114903 (2007).
    [Crossref]

2014 (1)

S. Verma, S. K. Pandey, M. Gupta, and S. Mukherjee, “Influence of Ion Beam Sputtering Deposition Parameters on Highly Photosensitive and Transparent CdZnO Thin Films,” J. Mater. Sci. 49(20), 6917–6929 (2014).
[Crossref]

2013 (2)

S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
[Crossref]

S. K. Pandey, S. Kumar Pandey, V. Awasthi, M. Gupta, U. P. Deshpande, and S. Mukherjee, “Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films,” Appl. Phys. Lett. 103(7), 072109 (2013).
[Crossref]

2012 (2)

S.-Y. Ting, H.-S. Chen, and C.-C. Yang, et al., “MBE-Grown CdZnO/ZnO Multiple Quantum-Well Light-Emitting Diode on MOCVD-Grown p-Type GaN,” IEEE Photon. Technol. Lett. 24(11), 11 (2012).
[Crossref]

S. S. Shinde, P. S. Shinde, Y. W. Oh, D. Haranath, C. H. Bhosale, and K. Y. Rajpure, “Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films,” Appl. Surf. Sci. 258(24), 9969–9976 (2012).
[Crossref]

2009 (2)

L. Li, Z. Yang, J. Y. Kong, and J. L. Liu, “Blue electroluminescence from ZnO based heterojunction diodes with CdZnO active layers,” Appl. Phys. Lett. 95(23), 232117 (2009).
[Crossref]

Z. Yang, L. Li, Z. Zuo, and J. L. Liu, “Temperature-dependent photoluminescence of CdZnO thin films grown by molecular-beam epitaxy,” J. Cryst. Growth 312(1), 68–72 (2009).
[Crossref]

2008 (3)

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

J. Y. Kong, S. Chu, M. Olmedo, L. Li, Z. Yang, and J. L. Liu, “Electrically pumped ultraviolet ZnO diode lasers on Si,” Appl. Phys. Lett. 93, 132113 (2008).
[Crossref]

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[Crossref]

2007 (3)

A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, and H. Gotoh, “Full-color electroluminescence from ZnO-based heterojunction diodes,” Appl. Phys. Lett. 90(9), 093512 (2007).
[Crossref]

P. Chen, X. Ma, and D. Yang, “Ultraviolet electroluminescence from ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 101, 053103 (2007).

J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, “Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures,” J. Appl. Phys. 102(11), 114903 (2007).
[Crossref]

2006 (3)

Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, “Dopant source choice for formation of p-type ZnO: Li acceptor,” Appl. Phys. Lett. 88(6), 062107 (2006).
[Crossref]

L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu, “p-type behavior from Sb-doped ZnO heterojunction photodiodes,” Appl. Phys. Lett. 88, 092103 (2006).
[Crossref]

S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, and F. Henneberger, “Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 89(20), 201907 (2006).
[Crossref]

2005 (2)

T. Shimomura, D. Kim, and M. Nakayama, “Optical properties of high-quality ZnO thin films grown by a sputtering method,” J. Lumin. 112(1-4), 191–195 (2005).
[Crossref]

B. L. Zhu, C. S. Xie, D. W. Zeng, W. L. Song, and A. H. Wang, “Investigation of gas sensitivity of Sb-doped ZnO nanoparticles,” Mater. Chem. Phys. 89(1), 148–153 (2005).
[Crossref]

2004 (3)

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 85, 759 (2004).
[Crossref]

D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, “As-doped p-type ZnO produced by an evaporation/sputtering process,” Appl. Phys. Lett. 85(22), 5269 (2004).
[Crossref]

S. Shigemori, A. Nakamura, J. Ishihara, T. Aoki, and J. Temmyo, “Zn1-xCdxO film growth using remote plasma-enhanced metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 43(Part 2), L1088–L1090 (2004).
[Crossref]

2003 (3)

K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, “UV Electroluminescence Emission from ZnO Light‐Emitting Diodes Grown by High‐Temperature Radiofrequency Sputtering,” Appl. Phys. Lett. 83, 63 (2003).
[Crossref]

J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 83(2), 1830 (2003).
[Crossref]

Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements,” J. Appl. Phys. 94(8), 4807 (2003).
[Crossref]

2001 (2)

X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285 (2001).
[Crossref]

X. L. Guo, H. Tabata, and T. Kawai, “Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source,” J. Cryst. Growth 223(1-2), 135–139 (2001).
[Crossref]

2000 (2)

B. J. Jin, S. Im, and S. Y. Lee, “Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition,” Thin Solid Films 366(1-2), 107–110 (2000).
[Crossref]

R. Ferro and J. A. Rodríguez, “Influence of F-doping on the transmittance and electron affinity of CdO thin films suitable for solar cells technology,” Sol. Energy Mater. Sol. Cells 64(4), 363–370 (2000).
[Crossref]

Aoki, T.

A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, and H. Gotoh, “Full-color electroluminescence from ZnO-based heterojunction diodes,” Appl. Phys. Lett. 90(9), 093512 (2007).
[Crossref]

S. Shigemori, A. Nakamura, J. Ishihara, T. Aoki, and J. Temmyo, “Zn1-xCdxO film growth using remote plasma-enhanced metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 43(Part 2), L1088–L1090 (2004).
[Crossref]

Awasthi, V.

S. K. Pandey, S. Kumar Pandey, V. Awasthi, M. Gupta, U. P. Deshpande, and S. Mukherjee, “Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films,” Appl. Phys. Lett. 103(7), 072109 (2013).
[Crossref]

Barman, S. R.

S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
[Crossref]

Bhosale, C. H.

S. S. Shinde, P. S. Shinde, Y. W. Oh, D. Haranath, C. H. Bhosale, and K. Y. Rajpure, “Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films,” Appl. Surf. Sci. 258(24), 9969–9976 (2012).
[Crossref]

Blumstengel, S.

S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, and F. Henneberger, “Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 89(20), 201907 (2006).
[Crossref]

Burgener, R. H.

D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, “As-doped p-type ZnO produced by an evaporation/sputtering process,” Appl. Phys. Lett. 85(22), 5269 (2004).
[Crossref]

Chen, H.-S.

S.-Y. Ting, H.-S. Chen, and C.-C. Yang, et al., “MBE-Grown CdZnO/ZnO Multiple Quantum-Well Light-Emitting Diode on MOCVD-Grown p-Type GaN,” IEEE Photon. Technol. Lett. 24(11), 11 (2012).
[Crossref]

Chen, P.

P. Chen, X. Ma, and D. Yang, “Ultraviolet electroluminescence from ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 101, 053103 (2007).

Chen, Z. Q.

Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements,” J. Appl. Phys. 94(8), 4807 (2003).
[Crossref]

Chow, P. P.

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Chu, S.

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[Crossref]

J. Y. Kong, S. Chu, M. Olmedo, L. Li, Z. Yang, and J. L. Liu, “Electrically pumped ultraviolet ZnO diode lasers on Si,” Appl. Phys. Lett. 93, 132113 (2008).
[Crossref]

Cui, J.

S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, and F. Henneberger, “Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 89(20), 201907 (2006).
[Crossref]

D’Souza, S. W.

S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
[Crossref]

Dabiran, A.

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Deshpande, U. P.

S. K. Pandey, S. Kumar Pandey, V. Awasthi, M. Gupta, U. P. Deshpande, and S. Mukherjee, “Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films,” Appl. Phys. Lett. 103(7), 072109 (2013).
[Crossref]

Falanga, M.

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Ferro, R.

R. Ferro and J. A. Rodríguez, “Influence of F-doping on the transmittance and electron affinity of CdO thin films suitable for solar cells technology,” Sol. Energy Mater. Sol. Cells 64(4), 363–370 (2000).
[Crossref]

Fu, C. L.

X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285 (2001).
[Crossref]

Gotoh, H.

A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, and H. Gotoh, “Full-color electroluminescence from ZnO-based heterojunction diodes,” Appl. Phys. Lett. 90(9), 093512 (2007).
[Crossref]

Guo, X. L.

X. L. Guo, H. Tabata, and T. Kawai, “Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source,” J. Cryst. Growth 223(1-2), 135–139 (2001).
[Crossref]

Gupta, M.

S. Verma, S. K. Pandey, M. Gupta, and S. Mukherjee, “Influence of Ion Beam Sputtering Deposition Parameters on Highly Photosensitive and Transparent CdZnO Thin Films,” J. Mater. Sci. 49(20), 6917–6929 (2014).
[Crossref]

S. K. Pandey, S. Kumar Pandey, V. Awasthi, M. Gupta, U. P. Deshpande, and S. Mukherjee, “Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films,” Appl. Phys. Lett. 103(7), 072109 (2013).
[Crossref]

S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
[Crossref]

Haranath, D.

S. S. Shinde, P. S. Shinde, Y. W. Oh, D. Haranath, C. H. Bhosale, and K. Y. Rajpure, “Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films,” Appl. Surf. Sci. 258(24), 9969–9976 (2012).
[Crossref]

He, G.

J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, “Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures,” J. Appl. Phys. 102(11), 114903 (2007).
[Crossref]

Henneberger, F.

S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, and F. Henneberger, “Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 89(20), 201907 (2006).
[Crossref]

Hertog, B.

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Hwang, D. K.

K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, “UV Electroluminescence Emission from ZnO Light‐Emitting Diodes Grown by High‐Temperature Radiofrequency Sputtering,” Appl. Phys. Lett. 83, 63 (2003).
[Crossref]

Im, S.

B. J. Jin, S. Im, and S. Y. Lee, “Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition,” Thin Solid Films 366(1-2), 107–110 (2000).
[Crossref]

Ishihara, J.

A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, and H. Gotoh, “Full-color electroluminescence from ZnO-based heterojunction diodes,” Appl. Phys. Lett. 90(9), 093512 (2007).
[Crossref]

S. Shigemori, A. Nakamura, J. Ishihara, T. Aoki, and J. Temmyo, “Zn1-xCdxO film growth using remote plasma-enhanced metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 43(Part 2), L1088–L1090 (2004).
[Crossref]

Jin, B. J.

B. J. Jin, S. Im, and S. Y. Lee, “Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition,” Thin Solid Films 366(1-2), 107–110 (2000).
[Crossref]

Jomard, F.

J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 83(2), 1830 (2003).
[Crossref]

Karpov, S.

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Kawai, T.

X. L. Guo, H. Tabata, and T. Kawai, “Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source,” J. Cryst. Growth 223(1-2), 135–139 (2001).
[Crossref]

Kawasaki, M.

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 85, 759 (2004).
[Crossref]

Kawasuso, A.

Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements,” J. Appl. Phys. 94(8), 4807 (2003).
[Crossref]

Kim, D.

T. Shimomura, D. Kim, and M. Nakayama, “Optical properties of high-quality ZnO thin films grown by a sputtering method,” J. Lumin. 112(1-4), 191–195 (2005).
[Crossref]

Kim, H. S.

K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, “UV Electroluminescence Emission from ZnO Light‐Emitting Diodes Grown by High‐Temperature Radiofrequency Sputtering,” Appl. Phys. Lett. 83, 63 (2003).
[Crossref]

Kim, K. K.

K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, “UV Electroluminescence Emission from ZnO Light‐Emitting Diodes Grown by High‐Temperature Radiofrequency Sputtering,” Appl. Phys. Lett. 83, 63 (2003).
[Crossref]

Kong, J. Y.

L. Li, Z. Yang, J. Y. Kong, and J. L. Liu, “Blue electroluminescence from ZnO based heterojunction diodes with CdZnO active layers,” Appl. Phys. Lett. 95(23), 232117 (2009).
[Crossref]

J. Y. Kong, S. Chu, M. Olmedo, L. Li, Z. Yang, and J. L. Liu, “Electrically pumped ultraviolet ZnO diode lasers on Si,” Appl. Phys. Lett. 93, 132113 (2008).
[Crossref]

Kumar Pandey, S.

S. K. Pandey, S. Kumar Pandey, V. Awasthi, M. Gupta, U. P. Deshpande, and S. Mukherjee, “Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films,” Appl. Phys. Lett. 103(7), 072109 (2013).
[Crossref]

Lee, S. Y.

B. J. Jin, S. Im, and S. Y. Lee, “Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition,” Thin Solid Films 366(1-2), 107–110 (2000).
[Crossref]

Li, D. Y.

Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, “Dopant source choice for formation of p-type ZnO: Li acceptor,” Appl. Phys. Lett. 88(6), 062107 (2006).
[Crossref]

Li, L.

Z. Yang, L. Li, Z. Zuo, and J. L. Liu, “Temperature-dependent photoluminescence of CdZnO thin films grown by molecular-beam epitaxy,” J. Cryst. Growth 312(1), 68–72 (2009).
[Crossref]

L. Li, Z. Yang, J. Y. Kong, and J. L. Liu, “Blue electroluminescence from ZnO based heterojunction diodes with CdZnO active layers,” Appl. Phys. Lett. 95(23), 232117 (2009).
[Crossref]

J. Y. Kong, S. Chu, M. Olmedo, L. Li, Z. Yang, and J. L. Liu, “Electrically pumped ultraviolet ZnO diode lasers on Si,” Appl. Phys. Lett. 93, 132113 (2008).
[Crossref]

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[Crossref]

Lim, J. H.

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[Crossref]

K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, “UV Electroluminescence Emission from ZnO Light‐Emitting Diodes Grown by High‐Temperature Radiofrequency Sputtering,” Appl. Phys. Lett. 83, 63 (2003).
[Crossref]

Liu, J. L.

Z. Yang, L. Li, Z. Zuo, and J. L. Liu, “Temperature-dependent photoluminescence of CdZnO thin films grown by molecular-beam epitaxy,” J. Cryst. Growth 312(1), 68–72 (2009).
[Crossref]

L. Li, Z. Yang, J. Y. Kong, and J. L. Liu, “Blue electroluminescence from ZnO based heterojunction diodes with CdZnO active layers,” Appl. Phys. Lett. 95(23), 232117 (2009).
[Crossref]

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[Crossref]

J. Y. Kong, S. Chu, M. Olmedo, L. Li, Z. Yang, and J. L. Liu, “Electrically pumped ultraviolet ZnO diode lasers on Si,” Appl. Phys. Lett. 93, 132113 (2008).
[Crossref]

L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu, “p-type behavior from Sb-doped ZnO heterojunction photodiodes,” Appl. Phys. Lett. 88, 092103 (2006).
[Crossref]

Liu, M.

J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, “Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures,” J. Appl. Phys. 102(11), 114903 (2007).
[Crossref]

Look, D. C.

D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, “As-doped p-type ZnO produced by an evaporation/sputtering process,” Appl. Phys. Lett. 85(22), 5269 (2004).
[Crossref]

Lu, J. G.

Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, “Dopant source choice for formation of p-type ZnO: Li acceptor,” Appl. Phys. Lett. 88(6), 062107 (2006).
[Crossref]

Lusson, A.

J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 83(2), 1830 (2003).
[Crossref]

Ma, X.

P. Chen, X. Ma, and D. Yang, “Ultraviolet electroluminescence from ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 101, 053103 (2007).

Maekawa, M.

Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements,” J. Appl. Phys. 94(8), 4807 (2003).
[Crossref]

Makino, T.

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 85, 759 (2004).
[Crossref]

Mandalapu, L. J.

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[Crossref]

L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu, “p-type behavior from Sb-doped ZnO heterojunction photodiodes,” Appl. Phys. Lett. 88, 092103 (2006).
[Crossref]

Mares, J. W.

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Marfaing, Y.

J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 83(2), 1830 (2003).
[Crossref]

Mimila-Arroyo, J.

J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 83(2), 1830 (2003).
[Crossref]

Mishra, P.

S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
[Crossref]

Mukherjee, C.

S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
[Crossref]

Mukherjee, S.

S. Verma, S. K. Pandey, M. Gupta, and S. Mukherjee, “Influence of Ion Beam Sputtering Deposition Parameters on Highly Photosensitive and Transparent CdZnO Thin Films,” J. Mater. Sci. 49(20), 6917–6929 (2014).
[Crossref]

S. K. Pandey, S. Kumar Pandey, V. Awasthi, M. Gupta, U. P. Deshpande, and S. Mukherjee, “Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films,” Appl. Phys. Lett. 103(7), 072109 (2013).
[Crossref]

S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
[Crossref]

Nakamura, A.

A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, and H. Gotoh, “Full-color electroluminescence from ZnO-based heterojunction diodes,” Appl. Phys. Lett. 90(9), 093512 (2007).
[Crossref]

S. Shigemori, A. Nakamura, J. Ishihara, T. Aoki, and J. Temmyo, “Zn1-xCdxO film growth using remote plasma-enhanced metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 43(Part 2), L1088–L1090 (2004).
[Crossref]

Nakayama, M.

T. Shimomura, D. Kim, and M. Nakayama, “Optical properties of high-quality ZnO thin films grown by a sputtering method,” J. Lumin. 112(1-4), 191–195 (2005).
[Crossref]

Oh, Y. W.

S. S. Shinde, P. S. Shinde, Y. W. Oh, D. Haranath, C. H. Bhosale, and K. Y. Rajpure, “Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films,” Appl. Surf. Sci. 258(24), 9969–9976 (2012).
[Crossref]

Ohashi, T.

A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, and H. Gotoh, “Full-color electroluminescence from ZnO-based heterojunction diodes,” Appl. Phys. Lett. 90(9), 093512 (2007).
[Crossref]

Ohtomo, A.

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 85, 759 (2004).
[Crossref]

Olmedo, M.

J. Y. Kong, S. Chu, M. Olmedo, L. Li, Z. Yang, and J. L. Liu, “Electrically pumped ultraviolet ZnO diode lasers on Si,” Appl. Phys. Lett. 93, 132113 (2008).
[Crossref]

Ong, H. C.

X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285 (2001).
[Crossref]

Osinsky, A.

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Pandey, S. K.

S. Verma, S. K. Pandey, M. Gupta, and S. Mukherjee, “Influence of Ion Beam Sputtering Deposition Parameters on Highly Photosensitive and Transparent CdZnO Thin Films,” J. Mater. Sci. 49(20), 6917–6929 (2014).
[Crossref]

S. K. Pandey, S. Kumar Pandey, V. Awasthi, M. Gupta, U. P. Deshpande, and S. Mukherjee, “Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films,” Appl. Phys. Lett. 103(7), 072109 (2013).
[Crossref]

S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
[Crossref]

S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
[Crossref]

Park, S. J.

K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, “UV Electroluminescence Emission from ZnO Light‐Emitting Diodes Grown by High‐Temperature Radiofrequency Sputtering,” Appl. Phys. Lett. 83, 63 (2003).
[Crossref]

Puls, J.

S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, and F. Henneberger, “Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 89(20), 201907 (2006).
[Crossref]

Rajpure, K. Y.

S. S. Shinde, P. S. Shinde, Y. W. Oh, D. Haranath, C. H. Bhosale, and K. Y. Rajpure, “Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films,” Appl. Surf. Sci. 258(24), 9969–9976 (2012).
[Crossref]

Renlund, G. M.

D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, “As-doped p-type ZnO produced by an evaporation/sputtering process,” Appl. Phys. Lett. 85(22), 5269 (2004).
[Crossref]

Rodríguez, J. A.

R. Ferro and J. A. Rodríguez, “Influence of F-doping on the transmittance and electron affinity of CdO thin films suitable for solar cells technology,” Sol. Energy Mater. Sol. Cells 64(4), 363–370 (2000).
[Crossref]

Rogaschewski, S.

S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, and F. Henneberger, “Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 89(20), 201907 (2006).
[Crossref]

Rommeluere, J. F.

J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 83(2), 1830 (2003).
[Crossref]

Sadofev, S.

S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, and F. Henneberger, “Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 89(20), 201907 (2006).
[Crossref]

Sallet, V.

J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 83(2), 1830 (2003).
[Crossref]

Schafer, P.

S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, and F. Henneberger, “Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 89(20), 201907 (2006).
[Crossref]

Schoenfeld, W. V.

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Segawa, Y.

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 85, 759 (2004).
[Crossref]

Sekiguchi, T.

Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements,” J. Appl. Phys. 94(8), 4807 (2003).
[Crossref]

Shigemori, S.

S. Shigemori, A. Nakamura, J. Ishihara, T. Aoki, and J. Temmyo, “Zn1-xCdxO film growth using remote plasma-enhanced metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 43(Part 2), L1088–L1090 (2004).
[Crossref]

Shimomura, T.

T. Shimomura, D. Kim, and M. Nakayama, “Optical properties of high-quality ZnO thin films grown by a sputtering method,” J. Lumin. 112(1-4), 191–195 (2005).
[Crossref]

Shinde, P. S.

S. S. Shinde, P. S. Shinde, Y. W. Oh, D. Haranath, C. H. Bhosale, and K. Y. Rajpure, “Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films,” Appl. Surf. Sci. 258(24), 9969–9976 (2012).
[Crossref]

Shinde, S. S.

S. S. Shinde, P. S. Shinde, Y. W. Oh, D. Haranath, C. H. Bhosale, and K. Y. Rajpure, “Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films,” Appl. Surf. Sci. 258(24), 9969–9976 (2012).
[Crossref]

Siu, G. G.

X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285 (2001).
[Crossref]

Sizelove, J. R.

D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, “As-doped p-type ZnO produced by an evaporation/sputtering process,” Appl. Phys. Lett. 85(22), 5269 (2004).
[Crossref]

Song, W. L.

B. L. Zhu, C. S. Xie, D. W. Zeng, W. L. Song, and A. H. Wang, “Investigation of gas sensitivity of Sb-doped ZnO nanoparticles,” Mater. Chem. Phys. 89(1), 148–153 (2005).
[Crossref]

Svob, L.

J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 83(2), 1830 (2003).
[Crossref]

Tabata, H.

X. L. Guo, H. Tabata, and T. Kawai, “Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source,” J. Cryst. Growth 223(1-2), 135–139 (2001).
[Crossref]

Temmyo, J.

A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, and H. Gotoh, “Full-color electroluminescence from ZnO-based heterojunction diodes,” Appl. Phys. Lett. 90(9), 093512 (2007).
[Crossref]

S. Shigemori, A. Nakamura, J. Ishihara, T. Aoki, and J. Temmyo, “Zn1-xCdxO film growth using remote plasma-enhanced metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 43(Part 2), L1088–L1090 (2004).
[Crossref]

Thompson, A. V.

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Ting, S.-Y.

S.-Y. Ting, H.-S. Chen, and C.-C. Yang, et al., “MBE-Grown CdZnO/ZnO Multiple Quantum-Well Light-Emitting Diode on MOCVD-Grown p-Type GaN,” IEEE Photon. Technol. Lett. 24(11), 11 (2012).
[Crossref]

Tsukazaki, A.

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 85, 759 (2004).
[Crossref]

Verma, S.

S. Verma, S. K. Pandey, M. Gupta, and S. Mukherjee, “Influence of Ion Beam Sputtering Deposition Parameters on Highly Photosensitive and Transparent CdZnO Thin Films,” J. Mater. Sci. 49(20), 6917–6929 (2014).
[Crossref]

Wang, A. H.

B. L. Zhu, C. S. Xie, D. W. Zeng, W. L. Song, and A. H. Wang, “Investigation of gas sensitivity of Sb-doped ZnO nanoparticles,” Mater. Chem. Phys. 89(1), 148–153 (2005).
[Crossref]

Wang, X. J.

J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, “Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures,” J. Appl. Phys. 102(11), 114903 (2007).
[Crossref]

Wu, X. L.

X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285 (2001).
[Crossref]

Xie, C. S.

B. L. Zhu, C. S. Xie, D. W. Zeng, W. L. Song, and A. H. Wang, “Investigation of gas sensitivity of Sb-doped ZnO nanoparticles,” Mater. Chem. Phys. 89(1), 148–153 (2005).
[Crossref]

Xie, J. Q.

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Xiu, F. X.

L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu, “p-type behavior from Sb-doped ZnO heterojunction photodiodes,” Appl. Phys. Lett. 88, 092103 (2006).
[Crossref]

Xu, W. Z.

Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, “Dopant source choice for formation of p-type ZnO: Li acceptor,” Appl. Phys. Lett. 88(6), 062107 (2006).
[Crossref]

Yamamoto, K.

A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, and H. Gotoh, “Full-color electroluminescence from ZnO-based heterojunction diodes,” Appl. Phys. Lett. 90(9), 093512 (2007).
[Crossref]

Yamamoto, S.

Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements,” J. Appl. Phys. 94(8), 4807 (2003).
[Crossref]

Yang, C.-C.

S.-Y. Ting, H.-S. Chen, and C.-C. Yang, et al., “MBE-Grown CdZnO/ZnO Multiple Quantum-Well Light-Emitting Diode on MOCVD-Grown p-Type GaN,” IEEE Photon. Technol. Lett. 24(11), 11 (2012).
[Crossref]

Yang, D.

P. Chen, X. Ma, and D. Yang, “Ultraviolet electroluminescence from ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 101, 053103 (2007).

Yang, Z.

L. Li, Z. Yang, J. Y. Kong, and J. L. Liu, “Blue electroluminescence from ZnO based heterojunction diodes with CdZnO active layers,” Appl. Phys. Lett. 95(23), 232117 (2009).
[Crossref]

Z. Yang, L. Li, Z. Zuo, and J. L. Liu, “Temperature-dependent photoluminescence of CdZnO thin films grown by molecular-beam epitaxy,” J. Cryst. Growth 312(1), 68–72 (2009).
[Crossref]

J. Y. Kong, S. Chu, M. Olmedo, L. Li, Z. Yang, and J. L. Liu, “Electrically pumped ultraviolet ZnO diode lasers on Si,” Appl. Phys. Lett. 93, 132113 (2008).
[Crossref]

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[Crossref]

L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu, “p-type behavior from Sb-doped ZnO heterojunction photodiodes,” Appl. Phys. Lett. 88, 092103 (2006).
[Crossref]

Ye, Z. Z.

Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, “Dopant source choice for formation of p-type ZnO: Li acceptor,” Appl. Phys. Lett. 88(6), 062107 (2006).
[Crossref]

Yoshida, S.

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 85, 759 (2004).
[Crossref]

Yuan, X. L.

Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements,” J. Appl. Phys. 94(8), 4807 (2003).
[Crossref]

Zeng, D. W.

B. L. Zhu, C. S. Xie, D. W. Zeng, W. L. Song, and A. H. Wang, “Investigation of gas sensitivity of Sb-doped ZnO nanoparticles,” Mater. Chem. Phys. 89(1), 148–153 (2005).
[Crossref]

Zeng, Y. J.

Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, “Dopant source choice for formation of p-type ZnO: Li acceptor,” Appl. Phys. Lett. 88(6), 062107 (2006).
[Crossref]

Zhang, J. P.

J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, “Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures,” J. Appl. Phys. 102(11), 114903 (2007).
[Crossref]

Zhang, L. D.

J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, “Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures,” J. Appl. Phys. 102(11), 114903 (2007).
[Crossref]

Zhang, Y.

J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, “Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures,” J. Appl. Phys. 102(11), 114903 (2007).
[Crossref]

Zhao, B. H.

Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, “Dopant source choice for formation of p-type ZnO: Li acceptor,” Appl. Phys. Lett. 88(6), 062107 (2006).
[Crossref]

Zhao, D. T.

L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu, “p-type behavior from Sb-doped ZnO heterojunction photodiodes,” Appl. Phys. Lett. 88, 092103 (2006).
[Crossref]

Zhu, B. L.

B. L. Zhu, C. S. Xie, D. W. Zeng, W. L. Song, and A. H. Wang, “Investigation of gas sensitivity of Sb-doped ZnO nanoparticles,” Mater. Chem. Phys. 89(1), 148–153 (2005).
[Crossref]

Zhu, L. P.

Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, “Dopant source choice for formation of p-type ZnO: Li acceptor,” Appl. Phys. Lett. 88(6), 062107 (2006).
[Crossref]

Zhu, L. Q.

J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, “Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures,” J. Appl. Phys. 102(11), 114903 (2007).
[Crossref]

Zuo, Z.

Z. Yang, L. Li, Z. Zuo, and J. L. Liu, “Temperature-dependent photoluminescence of CdZnO thin films grown by molecular-beam epitaxy,” J. Cryst. Growth 312(1), 68–72 (2009).
[Crossref]

Appl. Phys. Lett. (14)

S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, and F. Henneberger, “Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 89(20), 201907 (2006).
[Crossref]

A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, and H. Gotoh, “Full-color electroluminescence from ZnO-based heterojunction diodes,” Appl. Phys. Lett. 90(9), 093512 (2007).
[Crossref]

J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 83(2), 1830 (2003).
[Crossref]

D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, “As-doped p-type ZnO produced by an evaporation/sputtering process,” Appl. Phys. Lett. 85(22), 5269 (2004).
[Crossref]

K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, “UV Electroluminescence Emission from ZnO Light‐Emitting Diodes Grown by High‐Temperature Radiofrequency Sputtering,” Appl. Phys. Lett. 83, 63 (2003).
[Crossref]

Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, “Dopant source choice for formation of p-type ZnO: Li acceptor,” Appl. Phys. Lett. 88(6), 062107 (2006).
[Crossref]

S. K. Pandey, S. Kumar Pandey, V. Awasthi, M. Gupta, U. P. Deshpande, and S. Mukherjee, “Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films,” Appl. Phys. Lett. 103(7), 072109 (2013).
[Crossref]

J. Y. Kong, S. Chu, M. Olmedo, L. Li, Z. Yang, and J. L. Liu, “Electrically pumped ultraviolet ZnO diode lasers on Si,” Appl. Phys. Lett. 93, 132113 (2008).
[Crossref]

L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu, “p-type behavior from Sb-doped ZnO heterojunction photodiodes,” Appl. Phys. Lett. 88, 092103 (2006).
[Crossref]

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[Crossref]

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 85, 759 (2004).
[Crossref]

X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285 (2001).
[Crossref]

P. Chen, X. Ma, and D. Yang, “Ultraviolet electroluminescence from ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 101, 053103 (2007).

L. Li, Z. Yang, J. Y. Kong, and J. L. Liu, “Blue electroluminescence from ZnO based heterojunction diodes with CdZnO active layers,” Appl. Phys. Lett. 95(23), 232117 (2009).
[Crossref]

Appl. Surf. Sci. (1)

S. S. Shinde, P. S. Shinde, Y. W. Oh, D. Haranath, C. H. Bhosale, and K. Y. Rajpure, “Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films,” Appl. Surf. Sci. 258(24), 9969–9976 (2012).
[Crossref]

IEEE Photon. Technol. Lett. (1)

S.-Y. Ting, H.-S. Chen, and C.-C. Yang, et al., “MBE-Grown CdZnO/ZnO Multiple Quantum-Well Light-Emitting Diode on MOCVD-Grown p-Type GaN,” IEEE Photon. Technol. Lett. 24(11), 11 (2012).
[Crossref]

J. Appl. Phys. (3)

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes,” J. Appl. Phys. 104(9), 093107 (2008).
[Crossref]

Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements,” J. Appl. Phys. 94(8), 4807 (2003).
[Crossref]

J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, “Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures,” J. Appl. Phys. 102(11), 114903 (2007).
[Crossref]

J. Cryst. Growth (2)

X. L. Guo, H. Tabata, and T. Kawai, “Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source,” J. Cryst. Growth 223(1-2), 135–139 (2001).
[Crossref]

Z. Yang, L. Li, Z. Zuo, and J. L. Liu, “Temperature-dependent photoluminescence of CdZnO thin films grown by molecular-beam epitaxy,” J. Cryst. Growth 312(1), 68–72 (2009).
[Crossref]

J. Lumin. (1)

T. Shimomura, D. Kim, and M. Nakayama, “Optical properties of high-quality ZnO thin films grown by a sputtering method,” J. Lumin. 112(1-4), 191–195 (2005).
[Crossref]

J. Mater. Sci. (1)

S. Verma, S. K. Pandey, M. Gupta, and S. Mukherjee, “Influence of Ion Beam Sputtering Deposition Parameters on Highly Photosensitive and Transparent CdZnO Thin Films,” J. Mater. Sci. 49(20), 6917–6929 (2014).
[Crossref]

J. Mater. Sci. Mater. Electron. (1)

S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D’Souza, and S. Mukherjee, “Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films,” J. Mater. Sci. Mater. Electron. 24(7), 2541–2547 (2013).
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Jpn. J. Appl. Phys. (1)

S. Shigemori, A. Nakamura, J. Ishihara, T. Aoki, and J. Temmyo, “Zn1-xCdxO film growth using remote plasma-enhanced metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 43(Part 2), L1088–L1090 (2004).
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Mater. Chem. Phys. (1)

B. L. Zhu, C. S. Xie, D. W. Zeng, W. L. Song, and A. H. Wang, “Investigation of gas sensitivity of Sb-doped ZnO nanoparticles,” Mater. Chem. Phys. 89(1), 148–153 (2005).
[Crossref]

Sol. Energy Mater. Sol. Cells (1)

R. Ferro and J. A. Rodríguez, “Influence of F-doping on the transmittance and electron affinity of CdO thin films suitable for solar cells technology,” Sol. Energy Mater. Sol. Cells 64(4), 363–370 (2000).
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Thin Solid Films (1)

B. J. Jin, S. Im, and S. Y. Lee, “Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition,” Thin Solid Films 366(1-2), 107–110 (2000).
[Crossref]

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Figures (4)

Fig. 1
Fig. 1 (a) Heterojunction device structure under forward bias, (b) XRD pattern of CdZnO, SZO and GZO thin films, each grown on Si(100) substrates.
Fig. 2
Fig. 2 Room-temperature PL spectra of separately grown (a) GZO, (b) CdZnO, and (c) SZO thin films grown on Si substrate.
Fig. 3
Fig. 3 I-V characteristic of p-i-n diode in (a) linear and (b) semi-logarithmic scale. The inset curve in linear I-V curve showed the ohmic contact formation with Indium contacts on SZO film and Si substrate. Energy band diagram of the heterojunction diode at (c) zero bias (d) forward bias.
Fig. 4
Fig. 4 (a) Room-temperature EL spectra at different injection current from 50 to 100 mA, (b) temperature dependent EL spectra of heterojunction diode from 80 to 300 K under injection current of 70 mA, (c) de-convoluted EL spectra of 80 K, and (c) Variation of NBE peak positions, as hollow red circles, against different temperatures and Varshni fitting is expressed as a solid blue line.

Equations (4)

Equations on this page are rendered with MathJax. Learn more.

Δ E C1 =  χ SZO χ CdZnO = ( 4.34.324 ) eV=0.024 eV
Δ E V1 =  E g,  SZO +Δ E C1 E g,  CdZnO = ( 3.230.0242.82 ) eV=0.386 eV
Δ E C3 =  χ GZO χ Si = ( 4.34.05 ) eV=0.25 eV
Δ E V3 =  E g,  GZO +Δ E C3 E g,  Si = ( 3.24+0.251.12 ) eV=2.37 eV

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