Abstract

By utilizing a CO2 laser centered at ~10.6 μm as an optical stimulus, we demonstrated bidirectional laser triggering in a two-terminal planar device based on a highly resistive vanadium dioxide (VO2) thin film. The break-over voltage of the VO2-based device was measured as large as ~294.8 V, which resulted from the high resistivity of insulating VO2 grains comprising the thin film and the large electrode separation of the device. The bidirectional current switching of up to 20 mA was achieved by harnessing the dramatic resistance variation of the device photo-thermally induced by the laser illumination. The transient responses of laser-triggered currents were also analyzed when laser pulses excited the device at a variety of pulse widths and repetition rates. In the transient responses, a maximum switching contrast between off- and on-state currents was measured as ~7067 with an off-state current of ~2.83 μA, and rising and falling times were measured as ~30 and ~16 ms, respectively, for 100 ms laser pulses.

© 2015 Optical Society of America

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    [Crossref] [PubMed]
  4. E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
    [Crossref] [PubMed]
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    [Crossref] [PubMed]
  6. S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
    [Crossref]
  7. M. Rini, A. Cavalleri, R. W. Schoenlein, R. López, L. C. Feldman, R. F. Haglund, L. A. Boatner, and T. E. Haynes, “Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance,” Opt. Lett. 30(5), 558–560 (2005).
    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  11. S. Chen, H. Ma, X. Yi, T. Xiong, H. Wang, and C. Ke, “Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation,” Sens. Actuators, A 115(1), 28–31 (2004).
    [Crossref]
  12. H. Wang, X. Yi, S. Chen, and X. Fu, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators, A 122(1), 108–112 (2005).
    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
  23. G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, and H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
    [Crossref]
  24. H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh, and D. H. Kim, “Mid-infrared properties of a VO2 film near the metal-insulator transition,” Phys. Rev. B Condens. Matter 54(7), 4621–4628 (1996).
    [Crossref] [PubMed]
  25. Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
    [Crossref]
  26. S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 063501 (2013).
    [Crossref]
  27. D. Ruzmetov, K. T. Zawilski, S. D. Senanayake, V. Narayanamurti, and S. Ramanathan, “Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide,” J. Phys. Condens. Matter 20(46), 465204 (2008).
    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
  30. B. S. Yilbas and S. Z. Shuja, “Heat transfer analysis of laser heated surfaces – conduction limited case,” Appl. Surf. Sci. 108(1), 167–175 (1997).
    [Crossref]
  31. D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87(5), 051910 (2005).
    [Crossref]
  32. H.-M. Jung and S. Um, “Thermo-electrical properties of composite semiconductor thin films composed of nanocrystalline graphene-vanadium oxides,” J. Nanosci. Nanotechnol. 14(12), 9051–9059 (2014).
    [Crossref] [PubMed]

2014 (4)

M. G. Hur, T. Masaki, and D. H. Yoon, “Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition,” J. Nanosci. Nanotechnol. 14(12), 8941–8945 (2014).
[Crossref] [PubMed]

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

H.-M. Jung and S. Um, “Thermo-electrical properties of composite semiconductor thin films composed of nanocrystalline graphene-vanadium oxides,” J. Nanosci. Nanotechnol. 14(12), 9051–9059 (2014).
[Crossref] [PubMed]

B.-J. Kim, G. Seo, and Y. W. Lee, “Bidirectional laser triggering of planar device based on vanadium dioxide thin film,” Opt. Express 22(8), 9016–9023 (2014).
[Crossref] [PubMed]

2013 (3)

J. D. Ryckman, K. A. Hallman, R. E. Marvel, R. F. Haglund, and S. M. Weiss, “Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition,” Opt. Express 21(9), 10753–10763 (2013).
[Crossref] [PubMed]

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 063501 (2013).
[Crossref]

2012 (3)

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

J. D. Ryckman, V. Diez-Blanco, J. Nag, R. E. Marvel, B. K. Choi, R. F. Haglund, and S. M. Weiss, “Photothermal optical modulation of ultra-compact hybrid Si-VO₂ ring resonators,” Opt. Express 20(12), 13215–13225 (2012).
[Crossref] [PubMed]

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, and H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[Crossref]

2010 (1)

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

2009 (3)

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

D. Ruzmetov, G. Gopalakrishnan, J. D. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 083702 (2009).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

2008 (3)

D. Ruzmetov, K. T. Zawilski, S. D. Senanayake, V. Narayanamurti, and S. Ramanathan, “Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide,” J. Phys. Condens. Matter 20(46), 465204 (2008).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

C. Ko and S. Ramanathan, “Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide,” J. Appl. Phys. 103(10), 106104 (2008).
[Crossref]

2007 (3)

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

2005 (3)

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87(5), 051910 (2005).
[Crossref]

M. Rini, A. Cavalleri, R. W. Schoenlein, R. López, L. C. Feldman, R. F. Haglund, L. A. Boatner, and T. E. Haynes, “Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance,” Opt. Lett. 30(5), 558–560 (2005).
[Crossref] [PubMed]

H. Wang, X. Yi, S. Chen, and X. Fu, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators, A 122(1), 108–112 (2005).
[Crossref]

2004 (1)

S. Chen, H. Ma, X. Yi, T. Xiong, H. Wang, and C. Ke, “Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation,” Sens. Actuators, A 115(1), 28–31 (2004).
[Crossref]

2001 (1)

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

2000 (1)

G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” J. Phys. Condens. Matter 12(41), 8837–8845 (2000).
[Crossref]

1997 (1)

B. S. Yilbas and S. Z. Shuja, “Heat transfer analysis of laser heated surfaces – conduction limited case,” Appl. Surf. Sci. 108(1), 167–175 (1997).
[Crossref]

1996 (1)

H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh, and D. H. Kim, “Mid-infrared properties of a VO2 film near the metal-insulator transition,” Phys. Rev. B Condens. Matter 54(7), 4621–4628 (1996).
[Crossref] [PubMed]

1993 (1)

S. Lu, L. Hou, and F. Gan, “Preparation and optical properties of phase-change VO2 thin films,” J. Mater. Sci. 28(8), 2169–2177 (1993).
[Crossref]

1974 (1)

N. F. Mott and L. Friedman, “Metal-insulator transitions in VO2, Ti2O3 and Ti2-xVxO3,” Philos. Mag. 30(2), 389–402 (1974).
[Crossref]

1961 (1)

B. K. Ridley and T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. Lond. 78(2), 293–304 (1961).
[Crossref]

1959 (1)

F. J. Morin, “Oxides which show a metal–insulator transition at the Neel temperature,” Phys. Rev. Lett. 3(1), 34–36 (1959).
[Crossref]

Ahn, J. S.

H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh, and D. H. Kim, “Mid-infrared properties of a VO2 film near the metal-insulator transition,” Phys. Rev. B Condens. Matter 54(7), 4621–4628 (1996).
[Crossref] [PubMed]

Andreev, G. O.

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Arcangeletti, E.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Balatsky, A. V.

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Baldassarre, L.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Basov, D. N.

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Blanchard, R.

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

Boatner, L. A.

Brassard, D.

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87(5), 051910 (2005).
[Crossref]

Brehm, M.

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Capasso, F.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

Cavalleri, A.

M. Rini, A. Cavalleri, R. W. Schoenlein, R. López, L. C. Feldman, R. F. Haglund, L. A. Boatner, and T. E. Haynes, “Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance,” Opt. Lett. 30(5), 558–560 (2005).
[Crossref] [PubMed]

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Chae, B.-G.

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Chen, S.

H. Wang, X. Yi, S. Chen, and X. Fu, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators, A 122(1), 108–112 (2005).
[Crossref]

S. Chen, H. Ma, X. Yi, T. Xiong, H. Wang, and C. Ke, “Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation,” Sens. Actuators, A 115(1), 28–31 (2004).
[Crossref]

Chen, X.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

Choi, B. K.

Choi, H. S.

H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh, and D. H. Kim, “Mid-infrared properties of a VO2 film near the metal-insulator transition,” Phys. Rev. B Condens. Matter 54(7), 4621–4628 (1996).
[Crossref] [PubMed]

Choi, J.

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, and H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[Crossref]

Choi, S.

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

Chun, C. H.

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

Cui, Y.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Deng, J. D.

D. Ruzmetov, G. Gopalakrishnan, J. D. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 083702 (2009).
[Crossref]

Di Castro, D.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Diez-Blanco, V.

El Khakani, M. A.

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87(5), 051910 (2005).
[Crossref]

Feldman, L. C.

Forget, P.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Fourmaux, S.

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87(5), 051910 (2005).
[Crossref]

Friedman, L.

N. F. Mott and L. Friedman, “Metal-insulator transitions in VO2, Ti2O3 and Ti2-xVxO3,” Philos. Mag. 30(2), 389–402 (1974).
[Crossref]

Fu, X.

H. Wang, X. Yi, S. Chen, and X. Fu, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators, A 122(1), 108–112 (2005).
[Crossref]

Gan, F.

S. Lu, L. Hou, and F. Gan, “Preparation and optical properties of phase-change VO2 thin films,” J. Mater. Sci. 28(8), 2169–2177 (1993).
[Crossref]

Genevet, P.

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

Gopalakrishnan, G.

D. Ruzmetov, G. Gopalakrishnan, J. D. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 083702 (2009).
[Crossref]

Haglund, R. F.

Hallman, K. A.

Han, C. S.

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

Han, S.

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

Haynes, T. E.

Ho, P.-C.

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Hou, L.

S. Lu, L. Hou, and F. Gan, “Preparation and optical properties of phase-change VO2 thin films,” J. Mater. Sci. 28(8), 2169–2177 (1993).
[Crossref]

Hur, M. G.

M. G. Hur, T. Masaki, and D. H. Yoon, “Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition,” J. Nanosci. Nanotechnol. 14(12), 8941–8945 (2014).
[Crossref] [PubMed]

Jean-Jacques, M.

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87(5), 051910 (2005).
[Crossref]

Jung, H.-M.

H.-M. Jung and S. Um, “Thermo-electrical properties of composite semiconductor thin films composed of nanocrystalline graphene-vanadium oxides,” J. Nanosci. Nanotechnol. 14(12), 9051–9059 (2014).
[Crossref] [PubMed]

Jung, J. H.

H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh, and D. H. Kim, “Mid-infrared properties of a VO2 film near the metal-insulator transition,” Phys. Rev. B Condens. Matter 54(7), 4621–4628 (1996).
[Crossref] [PubMed]

Kahng, B.

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 063501 (2013).
[Crossref]

Kats, M. A.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

Ke, C.

S. Chen, H. Ma, X. Yi, T. Xiong, H. Wang, and C. Ke, “Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation,” Sens. Actuators, A 115(1), 28–31 (2004).
[Crossref]

Keilmann, F.

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Kieffer, J. C.

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87(5), 051910 (2005).
[Crossref]

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Kim, B.-J.

B.-J. Kim, G. Seo, and Y. W. Lee, “Bidirectional laser triggering of planar device based on vanadium dioxide thin film,” Opt. Express 22(8), 9016–9023 (2014).
[Crossref] [PubMed]

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, and H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[Crossref]

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

Kim, D. H.

H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh, and D. H. Kim, “Mid-infrared properties of a VO2 film near the metal-insulator transition,” Phys. Rev. B Condens. Matter 54(7), 4621–4628 (1996).
[Crossref] [PubMed]

Kim, G.

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

Kim, H.-T.

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, and H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[Crossref]

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

Kim, K.

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 063501 (2013).
[Crossref]

Ko, C.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

C. Ko and S. Ramanathan, “Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide,” J. Appl. Phys. 103(10), 106104 (2008).
[Crossref]

Lee, J. S.

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 063501 (2013).
[Crossref]

Lee, S. B.

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 063501 (2013).
[Crossref]

Lee, Y. W.

B.-J. Kim, G. Seo, and Y. W. Lee, “Bidirectional laser triggering of planar device based on vanadium dioxide thin film,” Opt. Express 22(8), 9016–9023 (2014).
[Crossref] [PubMed]

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, and H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[Crossref]

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

Lim, J.-W.

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Lin, J.

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

López, R.

Lu, S.

S. Lu, L. Hou, and F. Gan, “Preparation and optical properties of phase-change VO2 thin films,” J. Mater. Sci. 28(8), 2169–2177 (1993).
[Crossref]

Lupi, S.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Ma, H.

S. Chen, H. Ma, X. Yi, T. Xiong, H. Wang, and C. Ke, “Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation,” Sens. Actuators, A 115(1), 28–31 (2004).
[Crossref]

Malavasi, L.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Maple, M. B.

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Marini, C.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Marvel, R. E.

Masaki, T.

M. G. Hur, T. Masaki, and D. H. Yoon, “Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition,” J. Nanosci. Nanotechnol. 14(12), 8941–8945 (2014).
[Crossref] [PubMed]

Morin, F. J.

F. J. Morin, “Oxides which show a metal–insulator transition at the Neel temperature,” Phys. Rev. Lett. 3(1), 34–36 (1959).
[Crossref]

Mott, N. F.

N. F. Mott and L. Friedman, “Metal-insulator transitions in VO2, Ti2O3 and Ti2-xVxO3,” Philos. Mag. 30(2), 389–402 (1974).
[Crossref]

Mouli, C.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

Nag, J.

Narayanamurti, V.

D. Ruzmetov, G. Gopalakrishnan, J. D. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 083702 (2009).
[Crossref]

D. Ruzmetov, K. T. Zawilski, S. D. Senanayake, V. Narayanamurti, and S. Ramanathan, “Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide,” J. Phys. Condens. Matter 20(46), 465204 (2008).
[Crossref] [PubMed]

Noh, T. W.

H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh, and D. H. Kim, “Mid-infrared properties of a VO2 film near the metal-insulator transition,” Phys. Rev. B Condens. Matter 54(7), 4621–4628 (1996).
[Crossref] [PubMed]

Oh, J. S.

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 063501 (2013).
[Crossref]

Park, S. M.

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

Pergament, A.

G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” J. Phys. Condens. Matter 12(41), 8837–8845 (2000).
[Crossref]

Perucchi, A.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Postorino, P.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Qazilbash, M. M.

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Ráksi, F.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Ramanathan, S.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

D. Ruzmetov, G. Gopalakrishnan, J. D. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 083702 (2009).
[Crossref]

C. Ko and S. Ramanathan, “Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide,” J. Appl. Phys. 103(10), 106104 (2008).
[Crossref]

D. Ruzmetov, K. T. Zawilski, S. D. Senanayake, V. Narayanamurti, and S. Ramanathan, “Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide,” J. Phys. Condens. Matter 20(46), 465204 (2008).
[Crossref] [PubMed]

Ridley, B. K.

B. K. Ridley and T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. Lond. 78(2), 293–304 (1961).
[Crossref]

Rini, M.

Ruzmetov, D.

D. Ruzmetov, G. Gopalakrishnan, J. D. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 083702 (2009).
[Crossref]

D. Ruzmetov, K. T. Zawilski, S. D. Senanayake, V. Narayanamurti, and S. Ramanathan, “Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide,” J. Phys. Condens. Matter 20(46), 465204 (2008).
[Crossref] [PubMed]

Ryckman, J. D.

Schoenlein, R. W.

Senanayake, S. D.

D. Ruzmetov, K. T. Zawilski, S. D. Senanayake, V. Narayanamurti, and S. Ramanathan, “Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide,” J. Phys. Condens. Matter 20(46), 465204 (2008).
[Crossref] [PubMed]

Seo, G.

B.-J. Kim, G. Seo, and Y. W. Lee, “Bidirectional laser triggering of planar device based on vanadium dioxide thin film,” Opt. Express 22(8), 9016–9023 (2014).
[Crossref] [PubMed]

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, and H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[Crossref]

Sharma, D.

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

Shuja, S. Z.

B. S. Yilbas and S. Z. Shuja, “Heat transfer analysis of laser heated surfaces – conduction limited case,” Appl. Surf. Sci. 108(1), 167–175 (1997).
[Crossref]

Siders, C. W.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Squier, J. A.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Stefanovich, D.

G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” J. Phys. Condens. Matter 12(41), 8837–8845 (2000).
[Crossref]

Stefanovich, G.

G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” J. Phys. Condens. Matter 12(41), 8837–8845 (2000).
[Crossref]

Tóth, C.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Um, S.

H.-M. Jung and S. Um, “Thermo-electrical properties of composite semiconductor thin films composed of nanocrystalline graphene-vanadium oxides,” J. Nanosci. Nanotechnol. 14(12), 9051–9059 (2014).
[Crossref] [PubMed]

Wang, H.

H. Wang, X. Yi, S. Chen, and X. Fu, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators, A 122(1), 108–112 (2005).
[Crossref]

S. Chen, H. Ma, X. Yi, T. Xiong, H. Wang, and C. Ke, “Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation,” Sens. Actuators, A 115(1), 28–31 (2004).
[Crossref]

Watkins, T. B.

B. K. Ridley and T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. Lond. 78(2), 293–304 (1961).
[Crossref]

Weiss, S. M.

Xiong, T.

S. Chen, H. Ma, X. Yi, T. Xiong, H. Wang, and C. Ke, “Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation,” Sens. Actuators, A 115(1), 28–31 (2004).
[Crossref]

Yang, Z.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

Yao, Y.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Yi, X.

H. Wang, X. Yi, S. Chen, and X. Fu, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators, A 122(1), 108–112 (2005).
[Crossref]

S. Chen, H. Ma, X. Yi, T. Xiong, H. Wang, and C. Ke, “Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation,” Sens. Actuators, A 115(1), 28–31 (2004).
[Crossref]

Yilbas, B. S.

B. S. Yilbas and S. Z. Shuja, “Heat transfer analysis of laser heated surfaces – conduction limited case,” Appl. Surf. Sci. 108(1), 167–175 (1997).
[Crossref]

Yoon, D. H.

M. G. Hur, T. Masaki, and D. H. Yoon, “Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition,” J. Nanosci. Nanotechnol. 14(12), 8941–8945 (2014).
[Crossref] [PubMed]

Yun, S. J.

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
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M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Zawilski, K. T.

D. Ruzmetov, K. T. Zawilski, S. D. Senanayake, V. Narayanamurti, and S. Ramanathan, “Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide,” J. Phys. Condens. Matter 20(46), 465204 (2008).
[Crossref] [PubMed]

Zhang, S.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Zhou, Y.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

Appl. Phys. Express (1)

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, and H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[Crossref]

Appl. Phys. Lett. (5)

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 063501 (2013).
[Crossref]

M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Ultra-thin perfect absorber employing a tunable phase change material,” Appl. Phys. Lett. 101(22), 221101 (2012).
[Crossref]

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87(5), 051910 (2005).
[Crossref]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Appl. Surf. Sci. (1)

B. S. Yilbas and S. Z. Shuja, “Heat transfer analysis of laser heated surfaces – conduction limited case,” Appl. Surf. Sci. 108(1), 167–175 (1997).
[Crossref]

Electron. Mater. Lett. (1)

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

IEEE Electron Device Lett. (2)

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

J. Appl. Phys. (2)

C. Ko and S. Ramanathan, “Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide,” J. Appl. Phys. 103(10), 106104 (2008).
[Crossref]

D. Ruzmetov, G. Gopalakrishnan, J. D. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 083702 (2009).
[Crossref]

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[Crossref]

J. Nanosci. Nanotechnol. (2)

H.-M. Jung and S. Um, “Thermo-electrical properties of composite semiconductor thin films composed of nanocrystalline graphene-vanadium oxides,” J. Nanosci. Nanotechnol. 14(12), 9051–9059 (2014).
[Crossref] [PubMed]

M. G. Hur, T. Masaki, and D. H. Yoon, “Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition,” J. Nanosci. Nanotechnol. 14(12), 8941–8945 (2014).
[Crossref] [PubMed]

J. Phys. Condens. Matter (2)

D. Ruzmetov, K. T. Zawilski, S. D. Senanayake, V. Narayanamurti, and S. Ramanathan, “Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide,” J. Phys. Condens. Matter 20(46), 465204 (2008).
[Crossref] [PubMed]

G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” J. Phys. Condens. Matter 12(41), 8837–8845 (2000).
[Crossref]

Opt. Express (5)

Opt. Lett. (1)

Philos. Mag. (1)

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Phys. Rev. B Condens. Matter (1)

H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh, and D. H. Kim, “Mid-infrared properties of a VO2 film near the metal-insulator transition,” Phys. Rev. B Condens. Matter 54(7), 4621–4628 (1996).
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A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
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Proc. Phys. Soc. Lond. (1)

B. K. Ridley and T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. Lond. 78(2), 293–304 (1961).
[Crossref]

Science (1)

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318(5857), 1750–1753 (2007).
[Crossref] [PubMed]

Sens. Actuators, A (2)

S. Chen, H. Ma, X. Yi, T. Xiong, H. Wang, and C. Ke, “Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation,” Sens. Actuators, A 115(1), 28–31 (2004).
[Crossref]

H. Wang, X. Yi, S. Chen, and X. Fu, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators, A 122(1), 108–112 (2005).
[Crossref]

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Figures (4)

Fig. 1
Fig. 1 Experimental setup for bidirectional laser triggering in two-terminal planar VO2 device using CO2 laser. The inset at an upper right corner shows the optical microscope image of the fabricated VO2 device (L = 100 μm and W = 50 μm).
Fig. 2
Fig. 2 I-V characteristics of fabricated VO2 device, measured in V-mode with CO2 laser switched on (red triangles) or off (black circles). Blue solid lines show laser-regulated reversible current switching. The left inset shows the I-mode I-V property of the device, measured without laser excitation. A black dot indicates the device breakage point. The right inset shows a resistance versus temperature curve of the device. Red circles and blue diamonds indicate heating and cooling curves, respectively.
Fig. 3
Fig. 3 Transient responses of laser-triggered device, measured for various on-state pulse widths such as (a) 40, (b) 50, (c) 75, (d) 100, (e) 150, and (f) 200 ms at a repetition rate of 1 Hz. The transient responses of the bidirectional laser triggering were examined in the circuit shown in Fig. 1 with RE = 100 Ω and VS = ~4.8 V, and the compliance current was set as 20 mA.
Fig. 4
Fig. 4 Transient responses of laser-triggered device, measured for various repetition rates such as (a) 0.1, (b) 0.2, (c) 0.5, (d) 1.0, (e) 2.0, and (f) 3.0 Hz at a fixed pulse width of 100 ms. The same test circuit used in Fig. 3 was utilized for the measurement of the transient responses, and the compliance current was also set as 20 mA.

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