Abstract

We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm.

© 2015 Optical Society of America

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References

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  22. S. W. Corzine, R. S. Geels, J. W. Scott, R.-H. Yan, and L. A. Coldren, “Design of Fabry-Perot surface-emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25(6), 1513–1524 (1989).
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    [Crossref]
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    [Crossref]
  27. D. Eimerl, L. Davis, S. Velsko, E. K. Graham, and A. Zalkin, “Optical, mechanical, and thermal properties of barium borate,” J. Appl. Phys. 62(5), 1968–1983 (1987).
    [Crossref]
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    [Crossref]
  30. C. N. Böttge, J. Hader, I. Kilen, J. V. Moloney, and S. W. Koch, “Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers,” Appl. Phys. Lett. 105(26), 261105 (2014).
    [Crossref]

2015 (1)

S. Baumgärtner, H. Kahle, R. Bek, T. Schwarzbäck, M. Jetter, and P. Michler, “Comparison of AlGaInP-VECSEL gain structures,” J. Cryst. Growth 414, 219–222 (2015).
[Crossref]

2014 (5)

J. Hader, J. V. Moloney, and S. W. Koch, “Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium,” Appl. Phys. Lett. 104(15), 151111 (2014).
[Crossref]

C. N. Böttge, J. Hader, I. Kilen, J. V. Moloney, and S. W. Koch, “Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers,” Appl. Phys. Lett. 105(26), 261105 (2014).
[Crossref]

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, and M. Guina, “High-efficiency 20 W yellow VECSEL,” Opt. Express 22(6), 6372–6380 (2014).
[Crossref] [PubMed]

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

R. Bek, G. Kersteen, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “All quantum dot mode-locked semi-conductor disk laser emitting at 655nm,” Appl. Phys. Lett. 105(8), 082107 (2014).
[Crossref]

2013 (3)

R. Bek, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses,” Appl. Phys. Lett. 103(24), 242101 (2013).
[Crossref]

S. Ranta, A. Härkönen, T. Leinonen, L. Orsila, J. Lyytikäinen, G. Steinmeyer, and M. Guina, “Mode-locked VECSEL emitting 5 ps pulses at 675 nm,” Opt. Lett. 38(13), 2289–2291 (2013).
[Crossref] [PubMed]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W,” Appl. Phys. Lett. 102(9), 092101 (2013).
[Crossref]

2012 (2)

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
[Crossref]

2011 (3)

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, A. Strittmatter, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 99(20), 201109 (2011).
[Crossref]

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Robach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power,” Appl. Phys. B 102(4), 789 (2011).
[Crossref]

C. Homann, N. Krebs, and E. Riedle, “Convenient pulse length measurement of sub-20-fs pulses down to the deep UV via two-photon absorption in bulk material,” Appl. Phys. B 104(4), 783–791 (2011)
[Crossref]

2010 (1)

R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl, “InGaNGaN disk laser for blue-violet emission wavelengths,” IEEE Photonics Technol. Lett. 22(9), 652–654 (2010).
[Crossref]

2009 (2)

V. I. Kozlovskii, B. M. Lavrushin, Y. K. Skasyrsky, and M. D. Tiberi, “Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror,” Quantum Electron. 39(8), 731–734 (2009).
[Crossref]

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

2008 (1)

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]

2006 (2)

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[Crossref]

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
[Crossref]

2005 (1)

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

2004 (1)

2002 (1)

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
[Crossref]

2000 (1)

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett 77(5), 651–653 (2000).
[Crossref]

1999 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 16(2), 267–269 (1999).

1989 (2)

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500 (1989).
[Crossref]

S. W. Corzine, R. S. Geels, J. W. Scott, R.-H. Yan, and L. A. Coldren, “Design of Fabry-Perot surface-emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25(6), 1513–1524 (1989).
[Crossref]

1987 (1)

D. Eimerl, L. Davis, S. Velsko, E. K. Graham, and A. Zalkin, “Optical, mechanical, and thermal properties of barium borate,” J. Appl. Phys. 62(5), 1968–1983 (1987).
[Crossref]

1968 (1)

G. D. Boyd and D. A. Kleinman, “Parametric interaction of focused Gaussian light beams,” J. Appl. Phys. 39(8), 3597–3639 (1968).
[Crossref]

Anthon, D. W.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
[Crossref]

Baum, P.

Baumgärtner, S.

S. Baumgärtner, H. Kahle, R. Bek, T. Schwarzbäck, M. Jetter, and P. Michler, “Comparison of AlGaInP-VECSEL gain structures,” J. Cryst. Growth 414, 219–222 (2015).
[Crossref]

Bek, R.

S. Baumgärtner, H. Kahle, R. Bek, T. Schwarzbäck, M. Jetter, and P. Michler, “Comparison of AlGaInP-VECSEL gain structures,” J. Cryst. Growth 414, 219–222 (2015).
[Crossref]

R. Bek, G. Kersteen, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “All quantum dot mode-locked semi-conductor disk laser emitting at 655nm,” Appl. Phys. Lett. 105(8), 082107 (2014).
[Crossref]

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

R. Bek, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses,” Appl. Phys. Lett. 103(24), 242101 (2013).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W,” Appl. Phys. Lett. 102(9), 092101 (2013).
[Crossref]

Berger, J. D.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
[Crossref]

Beyertt, S.-S.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
[Crossref]

Böttge, C. N.

C. N. Böttge, J. Hader, I. Kilen, J. V. Moloney, and S. W. Koch, “Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers,” Appl. Phys. Lett. 105(26), 261105 (2014).
[Crossref]

Boyd, G. D.

G. D. Boyd and D. A. Kleinman, “Parametric interaction of focused Gaussian light beams,” J. Appl. Phys. 39(8), 3597–3639 (1968).
[Crossref]

Brauch, U.

R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl, “InGaNGaN disk laser for blue-violet emission wavelengths,” IEEE Photonics Technol. Lett. 22(9), 652–654 (2010).
[Crossref]

Brennan, T. M.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500 (1989).
[Crossref]

Brueck, S. R. J.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500 (1989).
[Crossref]

Burns, D.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]

Calvez, S.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

Caprara, A.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
[Crossref]

Casel, O.

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

Chilla, J. L.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
[Crossref]

Coldren, L. A.

S. W. Corzine, R. S. Geels, J. W. Scott, R.-H. Yan, and L. A. Coldren, “Design of Fabry-Perot surface-emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25(6), 1513–1524 (1989).
[Crossref]

Corzine, S. W.

S. W. Corzine, R. S. Geels, J. W. Scott, R.-H. Yan, and L. A. Coldren, “Design of Fabry-Perot surface-emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25(6), 1513–1524 (1989).
[Crossref]

Davis, L.

D. Eimerl, L. Davis, S. Velsko, E. K. Graham, and A. Zalkin, “Optical, mechanical, and thermal properties of barium borate,” J. Appl. Phys. 62(5), 1968–1983 (1987).
[Crossref]

Dawson, M. D.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[Crossref]

Debusmann, R.

R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl, “InGaNGaN disk laser for blue-violet emission wavelengths,” IEEE Photonics Technol. Lett. 22(9), 652–654 (2010).
[Crossref]

Dhidah, N.

R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl, “InGaNGaN disk laser for blue-violet emission wavelengths,” IEEE Photonics Technol. Lett. 22(9), 652–654 (2010).
[Crossref]

Doehler, G. H.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
[Crossref]

Eichfelder, M.

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Robach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power,” Appl. Phys. B 102(4), 789 (2011).
[Crossref]

Eimerl, D.

D. Eimerl, L. Davis, S. Velsko, E. K. Graham, and A. Zalkin, “Optical, mechanical, and thermal properties of barium borate,” J. Appl. Phys. 62(5), 1968–1983 (1987).
[Crossref]

Fuchs, H.

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

Geels, R. S.

S. W. Corzine, R. S. Geels, J. W. Scott, R.-H. Yan, and L. A. Coldren, “Design of Fabry-Perot surface-emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25(6), 1513–1524 (1989).
[Crossref]

Gerster, E.

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

Giesen, A.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
[Crossref]

Govorkov, S. V.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
[Crossref]

Graf, T.

R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl, “InGaNGaN disk laser for blue-violet emission wavelengths,” IEEE Photonics Technol. Lett. 22(9), 652–654 (2010).
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Graham, E. K.

D. Eimerl, L. Davis, S. Velsko, E. K. Graham, and A. Zalkin, “Optical, mechanical, and thermal properties of barium borate,” J. Appl. Phys. 62(5), 1968–1983 (1987).
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Guina, M.

Hader, J.

C. N. Böttge, J. Hader, I. Kilen, J. V. Moloney, and S. W. Koch, “Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers,” Appl. Phys. Lett. 105(26), 261105 (2014).
[Crossref]

J. Hader, J. V. Moloney, and S. W. Koch, “Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium,” Appl. Phys. Lett. 104(15), 151111 (2014).
[Crossref]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 16(2), 267–269 (1999).

Hammons, B. E.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500 (1989).
[Crossref]

Hargart, F.

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W,” Appl. Phys. Lett. 102(9), 092101 (2013).
[Crossref]

Härkönen, A.

Hastie, J. E.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[Crossref]

Heinen, B.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Heldmaier, M.

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

Hoffmann, V.

R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl, “InGaNGaN disk laser for blue-violet emission wavelengths,” IEEE Photonics Technol. Lett. 22(9), 652–654 (2010).
[Crossref]

Homann, C.

C. Homann, N. Krebs, and E. Riedle, “Convenient pulse length measurement of sub-20-fs pulses down to the deep UV via two-photon absorption in bulk material,” Appl. Phys. B 104(4), 783–791 (2011)
[Crossref]

Hopkins, J.-M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]

Jetter, M.

S. Baumgärtner, H. Kahle, R. Bek, T. Schwarzbäck, M. Jetter, and P. Michler, “Comparison of AlGaInP-VECSEL gain structures,” J. Cryst. Growth 414, 219–222 (2015).
[Crossref]

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

R. Bek, G. Kersteen, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “All quantum dot mode-locked semi-conductor disk laser emitting at 655nm,” Appl. Phys. Lett. 105(8), 082107 (2014).
[Crossref]

R. Bek, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses,” Appl. Phys. Lett. 103(24), 242101 (2013).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W,” Appl. Phys. Lett. 102(9), 092101 (2013).
[Crossref]

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Robach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power,” Appl. Phys. B 102(4), 789 (2011).
[Crossref]

Johnson, N. M.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, A. Strittmatter, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 99(20), 201109 (2011).
[Crossref]

Kahle, H.

S. Baumgärtner, H. Kahle, R. Bek, T. Schwarzbäck, M. Jetter, and P. Michler, “Comparison of AlGaInP-VECSEL gain structures,” J. Cryst. Growth 414, 219–222 (2015).
[Crossref]

R. Bek, G. Kersteen, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “All quantum dot mode-locked semi-conductor disk laser emitting at 655nm,” Appl. Phys. Lett. 105(8), 082107 (2014).
[Crossref]

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W,” Appl. Phys. Lett. 102(9), 092101 (2013).
[Crossref]

R. Bek, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses,” Appl. Phys. Lett. 103(24), 242101 (2013).
[Crossref]

Kantola, E.

Karnutsch, C.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
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Keller, U.

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
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Kemp, A. J.

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[Crossref]

Kersteen, G.

R. Bek, G. Kersteen, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “All quantum dot mode-locked semi-conductor disk laser emitting at 655nm,” Appl. Phys. Lett. 105(8), 082107 (2014).
[Crossref]

Kessler, C. A.

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W,” Appl. Phys. Lett. 102(9), 092101 (2013).
[Crossref]

Kilen, I.

C. N. Böttge, J. Hader, I. Kilen, J. V. Moloney, and S. W. Koch, “Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers,” Appl. Phys. Lett. 105(26), 261105 (2014).
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Kleinman, D. A.

G. D. Boyd and D. A. Kleinman, “Parametric interaction of focused Gaussian light beams,” J. Appl. Phys. 39(8), 3597–3639 (1968).
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Kneissl, M.

R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl, “InGaNGaN disk laser for blue-violet emission wavelengths,” IEEE Photonics Technol. Lett. 22(9), 652–654 (2010).
[Crossref]

Koch, M.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Koch, S.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Koch, S. W.

J. Hader, J. V. Moloney, and S. W. Koch, “Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium,” Appl. Phys. Lett. 104(15), 151111 (2014).
[Crossref]

C. N. Böttge, J. Hader, I. Kilen, J. V. Moloney, and S. W. Koch, “Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers,” Appl. Phys. Lett. 105(26), 261105 (2014).
[Crossref]

Koroknay, E.

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W,” Appl. Phys. Lett. 102(9), 092101 (2013).
[Crossref]

Kozlovskii, V. I.

V. I. Kozlovskii, B. M. Lavrushin, Y. K. Skasyrsky, and M. D. Tiberi, “Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror,” Quantum Electron. 39(8), 731–734 (2009).
[Crossref]

Krausz, F.

A. Zheltikov, A. L’Huillier, and F. Krausz, “Nonlinear Optics,” in Springer Handbook of Lasers and Optics, F. Träger, ed. (Springer, 2007).
[Crossref]

Krebs, N.

C. Homann, N. Krebs, and E. Riedle, “Convenient pulse length measurement of sub-20-fs pulses down to the deep UV via two-photon absorption in bulk material,” Appl. Phys. B 104(4), 783–791 (2011)
[Crossref]

Krysa, A. B.

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[Crossref]

Kunert, B.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 16(2), 267–269 (1999).

L’Huillier, A.

A. Zheltikov, A. L’Huillier, and F. Krausz, “Nonlinear Optics,” in Springer Handbook of Lasers and Optics, F. Träger, ed. (Springer, 2007).
[Crossref]

Lavrushin, B. M.

V. I. Kozlovskii, B. M. Lavrushin, Y. K. Skasyrsky, and M. D. Tiberi, “Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror,” Quantum Electron. 39(8), 731–734 (2009).
[Crossref]

Leinonen, T.

Lepert, A. Y.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
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Liau, Z. L.

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett 77(5), 651–653 (2000).
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Linder, N.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
[Crossref]

Lochbrunner, S.

Luft, J.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
[Crossref]

Lyytikäinen, J.

McInerney, J. G.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500 (1989).
[Crossref]

Mefferd, W.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
[Crossref]

Michler, P.

S. Baumgärtner, H. Kahle, R. Bek, T. Schwarzbäck, M. Jetter, and P. Michler, “Comparison of AlGaInP-VECSEL gain structures,” J. Cryst. Growth 414, 219–222 (2015).
[Crossref]

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

R. Bek, G. Kersteen, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “All quantum dot mode-locked semi-conductor disk laser emitting at 655nm,” Appl. Phys. Lett. 105(8), 082107 (2014).
[Crossref]

R. Bek, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses,” Appl. Phys. Lett. 103(24), 242101 (2013).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W,” Appl. Phys. Lett. 102(9), 092101 (2013).
[Crossref]

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Robach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power,” Appl. Phys. B 102(4), 789 (2011).
[Crossref]

Moloney, J.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Moloney, J. V.

J. Hader, J. V. Moloney, and S. W. Koch, “Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium,” Appl. Phys. Lett. 104(15), 151111 (2014).
[Crossref]

C. N. Böttge, J. Hader, I. Kilen, J. V. Moloney, and S. W. Koch, “Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers,” Appl. Phys. Lett. 105(26), 261105 (2014).
[Crossref]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 16(2), 267–269 (1999).

Morton, L. G.

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[Crossref]

Müller, M.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
[Crossref]

Northrup, J. E.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, A. Strittmatter, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 99(20), 201109 (2011).
[Crossref]

Okhotnikov, O. G.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

Orsila, L.

Osinski, M.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500 (1989).
[Crossref]

Raja, M. Y. A.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500 (1989).
[Crossref]

Ranta, S.

Rattunde, M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]

Riedle, E.

C. Homann, N. Krebs, and E. Riedle, “Convenient pulse length measurement of sub-20-fs pulses down to the deep UV via two-photon absorption in bulk material,” Appl. Phys. B 104(4), 783–791 (2011)
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P. Baum, S. Lochbrunner, and E. Riedle, “Zero-additional-phase SPIDER: full characterization of visible and sub-20-fs ultraviolet pulses,” Opt. Lett. 29(2), 210–212 (2004).
[Crossref] [PubMed]

Robach, R.

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Robach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power,” Appl. Phys. B 102(4), 789 (2011).
[Crossref]

Roberts, J. S.

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[Crossref]

Rotella, P.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, A. Strittmatter, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 99(20), 201109 (2011).
[Crossref]

Schaus, C. F.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500 (1989).
[Crossref]

Schmid, W.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
[Crossref]

Schulz, N.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]

Schulz, W.-M.

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Robach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power,” Appl. Phys. B 102(4), 789 (2011).
[Crossref]

Schwarzbäck, T.

S. Baumgärtner, H. Kahle, R. Bek, T. Schwarzbäck, M. Jetter, and P. Michler, “Comparison of AlGaInP-VECSEL gain structures,” J. Cryst. Growth 414, 219–222 (2015).
[Crossref]

R. Bek, G. Kersteen, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “All quantum dot mode-locked semi-conductor disk laser emitting at 655nm,” Appl. Phys. Lett. 105(8), 082107 (2014).
[Crossref]

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

R. Bek, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses,” Appl. Phys. Lett. 103(24), 242101 (2013).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W,” Appl. Phys. Lett. 102(9), 092101 (2013).
[Crossref]

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Robach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power,” Appl. Phys. B 102(4), 789 (2011).
[Crossref]

Scott, J. W.

S. W. Corzine, R. S. Geels, J. W. Scott, R.-H. Yan, and L. A. Coldren, “Design of Fabry-Perot surface-emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25(6), 1513–1524 (1989).
[Crossref]

Shu, Q.-Z.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
[Crossref]

Skasyrsky, Y. K.

V. I. Kozlovskii, B. M. Lavrushin, Y. K. Skasyrsky, and M. D. Tiberi, “Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror,” Quantum Electron. 39(8), 731–734 (2009).
[Crossref]

Sparenberg, M.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Spinelli, L.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
[Crossref]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 16(2), 267–269 (1999).

Steinmeyer, G.

Stolz, W.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Streubel, K. P.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
[Crossref]

Strittmatter, A.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, A. Strittmatter, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 99(20), 201109 (2011).
[Crossref]

Tavast, M.

Teepe, M.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, A. Strittmatter, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 99(20), 201109 (2011).
[Crossref]

Tiberi, M. D.

V. I. Kozlovskii, B. M. Lavrushin, Y. K. Skasyrsky, and M. D. Tiberi, “Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror,” Quantum Electron. 39(8), 731–734 (2009).
[Crossref]

Tremont, M. A.

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

Tropper, A. C.

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
[Crossref]

Unger, P.

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

Velsko, S.

D. Eimerl, L. Davis, S. Velsko, E. K. Graham, and A. Zalkin, “Optical, mechanical, and thermal properties of barium borate,” J. Appl. Phys. 62(5), 1968–1983 (1987).
[Crossref]

Wagner, J.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]

Wallenstein, R.

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

Wang, T.-L.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Weber, A.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Weixelbaum, L.

R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl, “InGaNGaN disk laser for blue-violet emission wavelengths,” IEEE Photonics Technol. Lett. 22(9), 652–654 (2010).
[Crossref]

Weyers, M.

R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl, “InGaNGaN disk laser for blue-violet emission wavelengths,” IEEE Photonics Technol. Lett. 22(9), 652–654 (2010).
[Crossref]

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

Woll, D.

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

Wraback, M.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, A. Strittmatter, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 99(20), 201109 (2011).
[Crossref]

Wunderer, T.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, A. Strittmatter, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 99(20), 201109 (2011).
[Crossref]

Yan, R.-H.

S. W. Corzine, R. S. Geels, J. W. Scott, R.-H. Yan, and L. A. Coldren, “Design of Fabry-Perot surface-emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25(6), 1513–1524 (1989).
[Crossref]

Yang, Z.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, A. Strittmatter, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 99(20), 201109 (2011).
[Crossref]

Zalkin, A.

D. Eimerl, L. Davis, S. Velsko, E. K. Graham, and A. Zalkin, “Optical, mechanical, and thermal properties of barium borate,” J. Appl. Phys. 62(5), 1968–1983 (1987).
[Crossref]

Zheltikov, A.

A. Zheltikov, A. L’Huillier, and F. Krausz, “Nonlinear Optics,” in Springer Handbook of Lasers and Optics, F. Träger, ed. (Springer, 2007).
[Crossref]

Zorn, M.

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

Appl. Phys. B (3)

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Robach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power,” Appl. Phys. B 102(4), 789 (2011).
[Crossref]

O. Casel, D. Woll, M. A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn, and M. Weyers, “Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser,” Appl. Phys. B 81(4), 443–446 (2005).
[Crossref]

C. Homann, N. Krebs, and E. Riedle, “Convenient pulse length measurement of sub-20-fs pulses down to the deep UV via two-photon absorption in bulk material,” Appl. Phys. B 104(4), 783–791 (2011)
[Crossref]

Appl. Phys. Express (1)

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

Appl. Phys. Lett (1)

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett 77(5), 651–653 (2000).
[Crossref]

Appl. Phys. Lett. (7)

J. Hader, J. V. Moloney, and S. W. Koch, “Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium,” Appl. Phys. Lett. 104(15), 151111 (2014).
[Crossref]

C. N. Böttge, J. Hader, I. Kilen, J. V. Moloney, and S. W. Koch, “Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers,” Appl. Phys. Lett. 105(26), 261105 (2014).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W,” Appl. Phys. Lett. 102(9), 092101 (2013).
[Crossref]

R. Bek, G. Kersteen, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “All quantum dot mode-locked semi-conductor disk laser emitting at 655nm,” Appl. Phys. Lett. 105(8), 082107 (2014).
[Crossref]

R. Bek, H. Kahle, T. Schwarzbäck, M. Jetter, and P. Michler, “Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses,” Appl. Phys. Lett. 103(24), 242101 (2013).
[Crossref]

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[Crossref]

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, A. Strittmatter, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 99(20), 201109 (2011).
[Crossref]

Electron. Lett. (1)

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

IEEE J. Quantum Electron. (2)

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500 (1989).
[Crossref]

S. W. Corzine, R. S. Geels, J. W. Scott, R.-H. Yan, and L. A. Coldren, “Design of Fabry-Perot surface-emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25(6), 1513–1524 (1989).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 16(2), 267–269 (1999).

IEEE Photonics Technol. Lett. (1)

R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl, “InGaNGaN disk laser for blue-violet emission wavelengths,” IEEE Photonics Technol. Lett. 22(9), 652–654 (2010).
[Crossref]

J. Appl. Phys. (2)

G. D. Boyd and D. A. Kleinman, “Parametric interaction of focused Gaussian light beams,” J. Appl. Phys. 39(8), 3597–3639 (1968).
[Crossref]

D. Eimerl, L. Davis, S. Velsko, E. K. Graham, and A. Zalkin, “Optical, mechanical, and thermal properties of barium borate,” J. Appl. Phys. 62(5), 1968–1983 (1987).
[Crossref]

J. Cryst. Growth (1)

S. Baumgärtner, H. Kahle, R. Bek, T. Schwarzbäck, M. Jetter, and P. Michler, “Comparison of AlGaInP-VECSEL gain structures,” J. Cryst. Growth 414, 219–222 (2015).
[Crossref]

Laser Photon. Rev. (2)

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]

Opt. Express (1)

Opt. Lett. (2)

Phys. Rep. (1)

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
[Crossref]

Proc. SPIE (2)

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649(1), 265–271 (2002).
[Crossref]

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).
[Crossref]

Quantum Electron. (1)

V. I. Kozlovskii, B. M. Lavrushin, Y. K. Skasyrsky, and M. D. Tiberi, “Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror,” Quantum Electron. 39(8), 731–734 (2009).
[Crossref]

Other (1)

A. Zheltikov, A. L’Huillier, and F. Krausz, “Nonlinear Optics,” in Springer Handbook of Lasers and Optics, F. Träger, ed. (Springer, 2007).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1 Index of refraction and electric field intensity in the SESAM simulated with the transfer matrix method. A 97nm SiO2 coating is used to increase the field enhancement at the QD layer position by a factor of ∼ 1.8 compared to the uncoated semiconductor structure.
Fig. 2
Fig. 2 Experimental setup (left) and photograph (right) of the mode-locked VECSEL. The v-shaped cavity is used for tight focussing of the laser mode onto the absorber. For second harmonic generation, a BBO crystal is placed in front of the SESAM. The emitted UV light becomes visible by the fluorescence on a sheet of paper.
Fig. 3
Fig. 3 Autocorrelation trace at the fundamental wavelength. The data are fitted by a sech2 showing a FWHM pulse duration of 1.22ps. Parts of the side pulses occuring due to the intra-cavity heat spreader can be observed.
Fig. 4
Fig. 4 Optical spectrum of the laser emission measured simultaneously with the AC trace plotted in Fig. 3 and sech2 fits showing FWHM values near the resolution limit. The intensities are not to scale, since an additional mirror was used to partly suppress the fundamental wavelength. Inset: Typical response function of the spectrometer measured with a helium-neon laser.
Fig. 5
Fig. 5 Extract from the laser emission measured with a 16GHz oscilloscope. The pulse train of the mode-locked laser is stable over the whole measurement range of 50μs with a clear zero level.

Equations (1)

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L g = τ GVM

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