Abstract

We report on ultrafast detection of radiation between 100 GHz and 22 THz by field-effect transistors in a large area configuration. With the exception of the Reststrahlenband of GaAs, the spectral coverage of the GaAs-based detectors is more than two orders of magnitude, covering the entire THz range (100 GHz − 10 THz). The temporal resolution of the robust devices is yet limited by the 30 GHz oscilloscope used for read out. The responsivity roll-off towards higher frequencies is weaker than expected from an RC-roll-off model. Terahertz pulses with peak powers of up to 65kW have been recorded without damaging the devices.

© 2015 Optical Society of America

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References

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  1. B. Zaks, R. Liu, and M. S. Sherwin, “Experimental observation of electron-hole recollisions,” Nature (London) 483, 580–583 (2012).
    [Crossref]
  2. M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
    [Crossref]
  3. M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
    [Crossref]
  4. H. W. Hübers, G. W. Schwaab, and H. P. Röser, “Video detection and mixing performance of GaAs Schottky-barrier diodes at 30 THz and comparison with metal-insulator-metal diodes,” J. Appl. Phys. 75, 4443 (1994).
    [Crossref]
  5. J. L. Hesler and T. W. Crowe, “Responsivity and noise measurements of zero-bias Schottky diode detectors,” in Proceedings of 18th International Symposium on Space Terahertz Technology, A. Karpov, ed. (ISSTT, 2007), p. 89.
  6. M. Hoefle, K. Haehnsen, I. Oprea, O. Cojocari, A. Penirschke, and R. Jakoby, “Compact and sensitive millimetre wave detectors based on low barrier Schottky diodes on impedance matched planar antennas,” J. Infrared Milli. Terahz. Waves 35, 891–908 (2014).
    [Crossref]
  7. A. Semenov, O. Cojocari, W. H. Song, A. Klushin, and A.-S. Müller, “Application of zero-bias quasi-optical Schottky-diode detectors for monitoring short-pulse and weak terahertz radiation,” IEEE Electron Device Lett. 31, 674–676 (2010).
    [Crossref]
  8. H. Sherry, J. Grzyb, Y. Zhao, R. A. Hadi, A. Cathelin, A. Kaiser, and U. Pfeiffer, “A 1kpixel CMOS camera chip for 25 fps real-time terahertz imaging applications,” in Proceedings of Solid-State Circuits Conference Digest of Technical Papers (IEEE, 2012), pp. 252–253.
  9. A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
    [Crossref]
  10. V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94, 3556 (2003).
    [Crossref]
  11. A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
    [Crossref]
  12. V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, and S. Yu. Shapoval, “High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array,” Appl. Phys. Lett. 98, 153504 (2011).
    [Crossref]
  13. S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
    [Crossref]
  14. S. Preu, M. Mittendorff, S. Winnerl, H. Lu, A. Gossard, and H. B. Weber, “Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals,” Opt. Express 21, 17941–17950 (2013).
    [Crossref] [PubMed]
  15. A. Mahi, H. Marinchio, C. Palermo, A. Belghachi, and L. Varani, “Enhanced THz detection through phase-controlled current response in field-effect transistors,” IEEE Electron Device Lett. 34, 795–797 (2013).
    [Crossref]
  16. S. Preu, P. G. Burke, M. S. Sherwin, and A. C. Gossard, “An improved theory for non-resonant THz detection in field effect transistors,” J. Appl. Phys. 111, 024502 (2012).
    [Crossref]
  17. D. Veksler, F. Teppe, A. P. Dmitriev, V. Y. Kachorovskii, W. Knap, and M. S. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73, 125328 (2006).
    [Crossref]
  18. A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolivar, D. Glaab, and H. G. Roskos, “Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors,” J. Appl. Phys. 105, 114511 (2009).
    [Crossref]
  19. M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71, 2465–2468 (1993).
    [Crossref] [PubMed]
  20. S. Preu, H. Lu, M. S. Sherwin, and A. C. Gossard, “Detection of nanosecond-scale, high power THz pulses with a field effect transistor,” Rev. Sci. Instrum. 83, 053101 (2012).
    [Crossref] [PubMed]
  21. D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
    [Crossref]
  22. S. Preu, G. H. Döhler, S. Malzer, L. Wang, and A. C. Gossard, “Tunable, continuous-wave terahertz photomixer sources and applications,” J. Appl. Phys. 109, 061301 (2011).
    [Crossref]
  23. M. Sakhno, A. Goenkov, and F. Sizov, “Uncooled detector challenges: millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors,” J. Appl. Phys. 114, 164503 (2013).
    [Crossref]
  24. F. Schuster, D. Coquillat, H. Videlier, M. Sakowicz, F. Teppe, L. Dussopt, B. Giffard, T. Skotnicki, and W. Knap, “Broadband terahertz imaging with highly sensitive silicon CMOS detectors,” Opt. Express 19, 7827–7832 (2011).
    [Crossref] [PubMed]
  25. G. R. Aizin and G. Dyer, “Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: finite plasmonic crystals and Tamm states,” Phys. Rev. B 86, 235316 (2012).
    [Crossref]
  26. W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).
  27. W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 2331–2333 (2004).
    [Crossref]

2014 (3)

M. Hoefle, K. Haehnsen, I. Oprea, O. Cojocari, A. Penirschke, and R. Jakoby, “Compact and sensitive millimetre wave detectors based on low barrier Schottky diodes on impedance matched planar antennas,” J. Infrared Milli. Terahz. Waves 35, 891–908 (2014).
[Crossref]

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

2013 (3)

S. Preu, M. Mittendorff, S. Winnerl, H. Lu, A. Gossard, and H. B. Weber, “Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals,” Opt. Express 21, 17941–17950 (2013).
[Crossref] [PubMed]

M. Sakhno, A. Goenkov, and F. Sizov, “Uncooled detector challenges: millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors,” J. Appl. Phys. 114, 164503 (2013).
[Crossref]

A. Mahi, H. Marinchio, C. Palermo, A. Belghachi, and L. Varani, “Enhanced THz detection through phase-controlled current response in field-effect transistors,” IEEE Electron Device Lett. 34, 795–797 (2013).
[Crossref]

2012 (5)

S. Preu, P. G. Burke, M. S. Sherwin, and A. C. Gossard, “An improved theory for non-resonant THz detection in field effect transistors,” J. Appl. Phys. 111, 024502 (2012).
[Crossref]

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
[Crossref]

S. Preu, H. Lu, M. S. Sherwin, and A. C. Gossard, “Detection of nanosecond-scale, high power THz pulses with a field effect transistor,” Rev. Sci. Instrum. 83, 053101 (2012).
[Crossref] [PubMed]

B. Zaks, R. Liu, and M. S. Sherwin, “Experimental observation of electron-hole recollisions,” Nature (London) 483, 580–583 (2012).
[Crossref]

G. R. Aizin and G. Dyer, “Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: finite plasmonic crystals and Tamm states,” Phys. Rev. B 86, 235316 (2012).
[Crossref]

2011 (3)

F. Schuster, D. Coquillat, H. Videlier, M. Sakowicz, F. Teppe, L. Dussopt, B. Giffard, T. Skotnicki, and W. Knap, “Broadband terahertz imaging with highly sensitive silicon CMOS detectors,” Opt. Express 19, 7827–7832 (2011).
[Crossref] [PubMed]

S. Preu, G. H. Döhler, S. Malzer, L. Wang, and A. C. Gossard, “Tunable, continuous-wave terahertz photomixer sources and applications,” J. Appl. Phys. 109, 061301 (2011).
[Crossref]

V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, and S. Yu. Shapoval, “High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array,” Appl. Phys. Lett. 98, 153504 (2011).
[Crossref]

2010 (3)

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
[Crossref]

A. Semenov, O. Cojocari, W. H. Song, A. Klushin, and A.-S. Müller, “Application of zero-bias quasi-optical Schottky-diode detectors for monitoring short-pulse and weak terahertz radiation,” IEEE Electron Device Lett. 31, 674–676 (2010).
[Crossref]

2009 (3)

M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
[Crossref]

A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolivar, D. Glaab, and H. G. Roskos, “Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors,” J. Appl. Phys. 105, 114511 (2009).
[Crossref]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

2006 (1)

D. Veksler, F. Teppe, A. P. Dmitriev, V. Y. Kachorovskii, W. Knap, and M. S. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73, 125328 (2006).
[Crossref]

2004 (1)

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 2331–2333 (2004).
[Crossref]

2003 (1)

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94, 3556 (2003).
[Crossref]

1994 (1)

H. W. Hübers, G. W. Schwaab, and H. P. Röser, “Video detection and mixing performance of GaAs Schottky-barrier diodes at 30 THz and comparison with metal-insulator-metal diodes,” J. Appl. Phys. 75, 4443 (1994).
[Crossref]

1993 (1)

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71, 2465–2468 (1993).
[Crossref] [PubMed]

Aizin, G. R.

G. R. Aizin and G. Dyer, “Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: finite plasmonic crystals and Tamm states,” Phys. Rev. B 86, 235316 (2012).
[Crossref]

Allen, S. J.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94, 3556 (2003).
[Crossref]

Andrews, A.

M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
[Crossref]

M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
[Crossref]

Bauer, M.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

Belghachi, A.

A. Mahi, H. Marinchio, C. Palermo, A. Belghachi, and L. Varani, “Enhanced THz detection through phase-controlled current response in field-effect transistors,” IEEE Electron Device Lett. 34, 795–797 (2013).
[Crossref]

Bolivar, P. H.

A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolivar, D. Glaab, and H. G. Roskos, “Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors,” J. Appl. Phys. 105, 114511 (2009).
[Crossref]

Bollaert, S.

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 2331–2333 (2004).
[Crossref]

Boppel, S.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
[Crossref]

Burke, P. G.

S. Preu, P. G. Burke, M. S. Sherwin, and A. C. Gossard, “An improved theory for non-resonant THz detection in field effect transistors,” J. Appl. Phys. 111, 024502 (2012).
[Crossref]

But, D. B.

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

Cappy, A.

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 2331–2333 (2004).
[Crossref]

Cathelin, A.

H. Sherry, J. Grzyb, Y. Zhao, R. A. Hadi, A. Cathelin, A. Kaiser, and U. Pfeiffer, “A 1kpixel CMOS camera chip for 25 fps real-time terahertz imaging applications,” in Proceedings of Solid-State Circuits Conference Digest of Technical Papers (IEEE, 2012), pp. 252–253.

Cojocari, O.

M. Hoefle, K. Haehnsen, I. Oprea, O. Cojocari, A. Penirschke, and R. Jakoby, “Compact and sensitive millimetre wave detectors based on low barrier Schottky diodes on impedance matched planar antennas,” J. Infrared Milli. Terahz. Waves 35, 891–908 (2014).
[Crossref]

A. Semenov, O. Cojocari, W. H. Song, A. Klushin, and A.-S. Müller, “Application of zero-bias quasi-optical Schottky-diode detectors for monitoring short-pulse and weak terahertz radiation,” IEEE Electron Device Lett. 31, 674–676 (2010).
[Crossref]

Coquillat, D.

F. Schuster, D. Coquillat, H. Videlier, M. Sakowicz, F. Teppe, L. Dussopt, B. Giffard, T. Skotnicki, and W. Knap, “Broadband terahertz imaging with highly sensitive silicon CMOS detectors,” Opt. Express 19, 7827–7832 (2011).
[Crossref] [PubMed]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

Crowe, T. W.

J. L. Hesler and T. W. Crowe, “Responsivity and noise measurements of zero-bias Schottky diode detectors,” in Proceedings of 18th International Symposium on Space Terahertz Technology, A. Karpov, ed. (ISSTT, 2007), p. 89.

Dmitriev, A. P.

D. Veksler, F. Teppe, A. P. Dmitriev, V. Y. Kachorovskii, W. Knap, and M. S. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73, 125328 (2006).
[Crossref]

Döhler, G. H.

S. Preu, G. H. Döhler, S. Malzer, L. Wang, and A. C. Gossard, “Tunable, continuous-wave terahertz photomixer sources and applications,” J. Appl. Phys. 109, 061301 (2011).
[Crossref]

Drachenko, O.

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

Drexler, C.

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

Dussopt, L.

Dyakonov, M.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71, 2465–2468 (1993).
[Crossref] [PubMed]

Dyakonova, N.

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

Dyer, G.

G. R. Aizin and G. Dyer, “Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: finite plasmonic crystals and Tamm states,” Phys. Rev. B 86, 235316 (2012).
[Crossref]

Ermolaev, D. M.

V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, and S. Yu. Shapoval, “High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array,” Appl. Phys. Lett. 98, 153504 (2011).
[Crossref]

Fatimy, A. E.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

Ganichev, S. D.

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

Gaska, R.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

Gavrilenko, V. I.

V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, and S. Yu. Shapoval, “High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array,” Appl. Phys. Lett. 98, 153504 (2011).
[Crossref]

Giffard, B.

Glaab, D.

A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolivar, D. Glaab, and H. G. Roskos, “Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors,” J. Appl. Phys. 105, 114511 (2009).
[Crossref]

Goenkov, A.

M. Sakhno, A. Goenkov, and F. Sizov, “Uncooled detector challenges: millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors,” J. Appl. Phys. 114, 164503 (2013).
[Crossref]

Gossard, A.

Gossard, A. C.

S. Preu, H. Lu, M. S. Sherwin, and A. C. Gossard, “Detection of nanosecond-scale, high power THz pulses with a field effect transistor,” Rev. Sci. Instrum. 83, 053101 (2012).
[Crossref] [PubMed]

S. Preu, P. G. Burke, M. S. Sherwin, and A. C. Gossard, “An improved theory for non-resonant THz detection in field effect transistors,” J. Appl. Phys. 111, 024502 (2012).
[Crossref]

S. Preu, G. H. Döhler, S. Malzer, L. Wang, and A. C. Gossard, “Tunable, continuous-wave terahertz photomixer sources and applications,” J. Appl. Phys. 109, 061301 (2011).
[Crossref]

Grzyb, J.

H. Sherry, J. Grzyb, Y. Zhao, R. A. Hadi, A. Cathelin, A. Kaiser, and U. Pfeiffer, “A 1kpixel CMOS camera chip for 25 fps real-time terahertz imaging applications,” in Proceedings of Solid-State Circuits Conference Digest of Technical Papers (IEEE, 2012), pp. 252–253.

Gutin, A.

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

Hadi, R. A.

H. Sherry, J. Grzyb, Y. Zhao, R. A. Hadi, A. Cathelin, A. Kaiser, and U. Pfeiffer, “A 1kpixel CMOS camera chip for 25 fps real-time terahertz imaging applications,” in Proceedings of Solid-State Circuits Conference Digest of Technical Papers (IEEE, 2012), pp. 252–253.

Haehnsen, K.

M. Hoefle, K. Haehnsen, I. Oprea, O. Cojocari, A. Penirschke, and R. Jakoby, “Compact and sensitive millimetre wave detectors based on low barrier Schottky diodes on impedance matched planar antennas,” J. Infrared Milli. Terahz. Waves 35, 891–908 (2014).
[Crossref]

Helm, M.

M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
[Crossref]

M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
[Crossref]

Hesler, J. L.

J. L. Hesler and T. W. Crowe, “Responsivity and noise measurements of zero-bias Schottky diode detectors,” in Proceedings of 18th International Symposium on Space Terahertz Technology, A. Karpov, ed. (ISSTT, 2007), p. 89.

Hoefle, M.

M. Hoefle, K. Haehnsen, I. Oprea, O. Cojocari, A. Penirschke, and R. Jakoby, “Compact and sensitive millimetre wave detectors based on low barrier Schottky diodes on impedance matched planar antennas,” J. Infrared Milli. Terahz. Waves 35, 891–908 (2014).
[Crossref]

Horing, N. J. M.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94, 3556 (2003).
[Crossref]

Hu, X.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

Hübers, H. W.

H. W. Hübers, G. W. Schwaab, and H. P. Röser, “Video detection and mixing performance of GaAs Schottky-barrier diodes at 30 THz and comparison with metal-insulator-metal diodes,” J. Appl. Phys. 75, 4443 (1994).
[Crossref]

Jakoby, R.

M. Hoefle, K. Haehnsen, I. Oprea, O. Cojocari, A. Penirschke, and R. Jakoby, “Compact and sensitive millimetre wave detectors based on low barrier Schottky diodes on impedance matched planar antennas,” J. Infrared Milli. Terahz. Waves 35, 891–908 (2014).
[Crossref]

Kachorovskii, V. Y.

D. Veksler, F. Teppe, A. P. Dmitriev, V. Y. Kachorovskii, W. Knap, and M. S. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73, 125328 (2006).
[Crossref]

Kaiser, A.

H. Sherry, J. Grzyb, Y. Zhao, R. A. Hadi, A. Cathelin, A. Kaiser, and U. Pfeiffer, “A 1kpixel CMOS camera chip for 25 fps real-time terahertz imaging applications,” in Proceedings of Solid-State Circuits Conference Digest of Technical Papers (IEEE, 2012), pp. 252–253.

Karpierz, K.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

Kasalynas, I.

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
[Crossref]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

Kašalynas, I.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

Khamaisi, B.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

Klushin, A.

A. Semenov, O. Cojocari, W. H. Song, A. Klushin, and A.-S. Müller, “Application of zero-bias quasi-optical Schottky-diode detectors for monitoring short-pulse and weak terahertz radiation,” IEEE Electron Device Lett. 31, 674–676 (2010).
[Crossref]

Knap, W.

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

F. Schuster, D. Coquillat, H. Videlier, M. Sakowicz, F. Teppe, L. Dussopt, B. Giffard, T. Skotnicki, and W. Knap, “Broadband terahertz imaging with highly sensitive silicon CMOS detectors,” Opt. Express 19, 7827–7832 (2011).
[Crossref] [PubMed]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

D. Veksler, F. Teppe, A. P. Dmitriev, V. Y. Kachorovskii, W. Knap, and M. S. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73, 125328 (2006).
[Crossref]

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 2331–2333 (2004).
[Crossref]

Krozer, V.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
[Crossref]

Lisauskas, A.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
[Crossref]

A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolivar, D. Glaab, and H. G. Roskos, “Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors,” J. Appl. Phys. 105, 114511 (2009).
[Crossref]

Liu, R.

B. Zaks, R. Liu, and M. S. Sherwin, “Experimental observation of electron-hole recollisions,” Nature (London) 483, 580–583 (2012).
[Crossref]

Lu, H.

S. Preu, M. Mittendorff, S. Winnerl, H. Lu, A. Gossard, and H. B. Weber, “Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals,” Opt. Express 21, 17941–17950 (2013).
[Crossref] [PubMed]

S. Preu, H. Lu, M. S. Sherwin, and A. C. Gossard, “Detection of nanosecond-scale, high power THz pulses with a field effect transistor,” Rev. Sci. Instrum. 83, 053101 (2012).
[Crossref] [PubMed]

Lusakowski, J.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 2331–2333 (2004).
[Crossref]

Mahi, A.

A. Mahi, H. Marinchio, C. Palermo, A. Belghachi, and L. Varani, “Enhanced THz detection through phase-controlled current response in field-effect transistors,” IEEE Electron Device Lett. 34, 795–797 (2013).
[Crossref]

Maleev, N. A.

V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, and S. Yu. Shapoval, “High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array,” Appl. Phys. Lett. 98, 153504 (2011).
[Crossref]

Malzer, S.

S. Preu, G. H. Döhler, S. Malzer, L. Wang, and A. C. Gossard, “Tunable, continuous-wave terahertz photomixer sources and applications,” J. Appl. Phys. 109, 061301 (2011).
[Crossref]

Maremyanin, K. V.

V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, and S. Yu. Shapoval, “High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array,” Appl. Phys. Lett. 98, 153504 (2011).
[Crossref]

Marinchio, H.

A. Mahi, H. Marinchio, C. Palermo, A. Belghachi, and L. Varani, “Enhanced THz detection through phase-controlled current response in field-effect transistors,” IEEE Electron Device Lett. 34, 795–797 (2013).
[Crossref]

Meziani, Y.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

Minkevicius, L.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
[Crossref]

Mittendorff, M.

Müller, A.-S.

A. Semenov, O. Cojocari, W. H. Song, A. Klushin, and A.-S. Müller, “Application of zero-bias quasi-optical Schottky-diode detectors for monitoring short-pulse and weak terahertz radiation,” IEEE Electron Device Lett. 31, 674–676 (2010).
[Crossref]

Mundt, M.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

Muravjov, A. V.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

Öjefors, E.

A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolivar, D. Glaab, and H. G. Roskos, “Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors,” J. Appl. Phys. 105, 114511 (2009).
[Crossref]

Oprea, I.

M. Hoefle, K. Haehnsen, I. Oprea, O. Cojocari, A. Penirschke, and R. Jakoby, “Compact and sensitive millimetre wave detectors based on low barrier Schottky diodes on impedance matched planar antennas,” J. Infrared Milli. Terahz. Waves 35, 891–908 (2014).
[Crossref]

Otsuji, T.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

Pala, N.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

Palermo, C.

A. Mahi, H. Marinchio, C. Palermo, A. Belghachi, and L. Varani, “Enhanced THz detection through phase-controlled current response in field-effect transistors,” IEEE Electron Device Lett. 34, 795–797 (2013).
[Crossref]

Parenty, T.

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 2331–2333 (2004).
[Crossref]

Peale, R. E.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

Penirschke, A.

M. Hoefle, K. Haehnsen, I. Oprea, O. Cojocari, A. Penirschke, and R. Jakoby, “Compact and sensitive millimetre wave detectors based on low barrier Schottky diodes on impedance matched planar antennas,” J. Infrared Milli. Terahz. Waves 35, 891–908 (2014).
[Crossref]

Peralta, X. G.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94, 3556 (2003).
[Crossref]

Pfeiffer, U.

A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolivar, D. Glaab, and H. G. Roskos, “Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors,” J. Appl. Phys. 105, 114511 (2009).
[Crossref]

H. Sherry, J. Grzyb, Y. Zhao, R. A. Hadi, A. Cathelin, A. Kaiser, and U. Pfeiffer, “A 1kpixel CMOS camera chip for 25 fps real-time terahertz imaging applications,” in Proceedings of Solid-State Circuits Conference Digest of Technical Papers (IEEE, 2012), pp. 252–253.

Polischuk, O. V.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94, 3556 (2003).
[Crossref]

Popov, V.

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 2331–2333 (2004).
[Crossref]

Popov, V. V.

V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, and S. Yu. Shapoval, “High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array,” Appl. Phys. Lett. 98, 153504 (2011).
[Crossref]

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94, 3556 (2003).
[Crossref]

Preu, S.

S. Preu, M. Mittendorff, S. Winnerl, H. Lu, A. Gossard, and H. B. Weber, “Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals,” Opt. Express 21, 17941–17950 (2013).
[Crossref] [PubMed]

S. Preu, P. G. Burke, M. S. Sherwin, and A. C. Gossard, “An improved theory for non-resonant THz detection in field effect transistors,” J. Appl. Phys. 111, 024502 (2012).
[Crossref]

S. Preu, H. Lu, M. S. Sherwin, and A. C. Gossard, “Detection of nanosecond-scale, high power THz pulses with a field effect transistor,” Rev. Sci. Instrum. 83, 053101 (2012).
[Crossref] [PubMed]

S. Preu, G. H. Döhler, S. Malzer, L. Wang, and A. C. Gossard, “Tunable, continuous-wave terahertz photomixer sources and applications,” J. Appl. Phys. 109, 061301 (2011).
[Crossref]

Roch, T.

M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
[Crossref]

Röser, H. P.

H. W. Hübers, G. W. Schwaab, and H. P. Röser, “Video detection and mixing performance of GaAs Schottky-barrier diodes at 30 THz and comparison with metal-insulator-metal diodes,” J. Appl. Phys. 75, 4443 (1994).
[Crossref]

Roskos, H. G.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
[Crossref]

A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolivar, D. Glaab, and H. G. Roskos, “Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors,” J. Appl. Phys. 105, 114511 (2009).
[Crossref]

Sakhno, M.

M. Sakhno, A. Goenkov, and F. Sizov, “Uncooled detector challenges: millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors,” J. Appl. Phys. 114, 164503 (2013).
[Crossref]

Sakhno, M. V.

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

Sakowicz, M.

F. Schuster, D. Coquillat, H. Videlier, M. Sakowicz, F. Teppe, L. Dussopt, B. Giffard, T. Skotnicki, and W. Knap, “Broadband terahertz imaging with highly sensitive silicon CMOS detectors,” Opt. Express 19, 7827–7832 (2011).
[Crossref] [PubMed]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

Saxena, H.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

Scharter, S.

M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
[Crossref]

Schartner, S.

M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
[Crossref]

Schneider, H.

M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
[Crossref]

M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
[Crossref]

Schuster, F.

Schwaab, G. W.

H. W. Hübers, G. W. Schwaab, and H. P. Röser, “Video detection and mixing performance of GaAs Schottky-barrier diodes at 30 THz and comparison with metal-insulator-metal diodes,” J. Appl. Phys. 75, 4443 (1994).
[Crossref]

Seliuta, D.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
[Crossref]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

Semenov, A.

A. Semenov, O. Cojocari, W. H. Song, A. Klushin, and A.-S. Müller, “Application of zero-bias quasi-optical Schottky-diode detectors for monitoring short-pulse and weak terahertz radiation,” IEEE Electron Device Lett. 31, 674–676 (2010).
[Crossref]

Shapoval, S. Yu.

V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, and S. Yu. Shapoval, “High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array,” Appl. Phys. Lett. 98, 153504 (2011).
[Crossref]

Sherry, H.

H. Sherry, J. Grzyb, Y. Zhao, R. A. Hadi, A. Cathelin, A. Kaiser, and U. Pfeiffer, “A 1kpixel CMOS camera chip for 25 fps real-time terahertz imaging applications,” in Proceedings of Solid-State Circuits Conference Digest of Technical Papers (IEEE, 2012), pp. 252–253.

Sherwin, M. S.

B. Zaks, R. Liu, and M. S. Sherwin, “Experimental observation of electron-hole recollisions,” Nature (London) 483, 580–583 (2012).
[Crossref]

S. Preu, P. G. Burke, M. S. Sherwin, and A. C. Gossard, “An improved theory for non-resonant THz detection in field effect transistors,” J. Appl. Phys. 111, 024502 (2012).
[Crossref]

S. Preu, H. Lu, M. S. Sherwin, and A. C. Gossard, “Detection of nanosecond-scale, high power THz pulses with a field effect transistor,” Rev. Sci. Instrum. 83, 053101 (2012).
[Crossref] [PubMed]

Shur, M.

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 2331–2333 (2004).
[Crossref]

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71, 2465–2468 (1993).
[Crossref] [PubMed]

Shur, M. S.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

D. Veksler, F. Teppe, A. P. Dmitriev, V. Y. Kachorovskii, W. Knap, and M. S. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73, 125328 (2006).
[Crossref]

Sizov, F.

M. Sakhno, A. Goenkov, and F. Sizov, “Uncooled detector challenges: millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors,” J. Appl. Phys. 114, 164503 (2013).
[Crossref]

Sizov, F. F.

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

Skotnicki, T.

Socher, E.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

Song, W. H.

A. Semenov, O. Cojocari, W. H. Song, A. Klushin, and A.-S. Müller, “Application of zero-bias quasi-optical Schottky-diode detectors for monitoring short-pulse and weak terahertz radiation,” IEEE Electron Device Lett. 31, 674–676 (2010).
[Crossref]

Stehr, D.

M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
[Crossref]

Strasser, G.

M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
[Crossref]

M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
[Crossref]

Teperik, T. V.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94, 3556 (2003).
[Crossref]

Teppe, F.

F. Schuster, D. Coquillat, H. Videlier, M. Sakowicz, F. Teppe, L. Dussopt, B. Giffard, T. Skotnicki, and W. Knap, “Broadband terahertz imaging with highly sensitive silicon CMOS detectors,” Opt. Express 19, 7827–7832 (2011).
[Crossref] [PubMed]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

D. Veksler, F. Teppe, A. P. Dmitriev, V. Y. Kachorovskii, W. Knap, and M. S. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73, 125328 (2006).
[Crossref]

Valusis, G.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
[Crossref]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

Varani, L.

A. Mahi, H. Marinchio, C. Palermo, A. Belghachi, and L. Varani, “Enhanced THz detection through phase-controlled current response in field-effect transistors,” IEEE Electron Device Lett. 34, 795–797 (2013).
[Crossref]

Veksler, D.

D. Veksler, F. Teppe, A. P. Dmitriev, V. Y. Kachorovskii, W. Knap, and M. S. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73, 125328 (2006).
[Crossref]

Veksler, D. B.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

Venckevicius, R.

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

Videlier, H.

Wagner, M.

M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
[Crossref]

M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
[Crossref]

Wang, L.

S. Preu, G. H. Döhler, S. Malzer, L. Wang, and A. C. Gossard, “Tunable, continuous-wave terahertz photomixer sources and applications,” J. Appl. Phys. 109, 061301 (2011).
[Crossref]

Wanke, M. C.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94, 3556 (2003).
[Crossref]

Weber, H. B.

Winnerl, S.

S. Preu, M. Mittendorff, S. Winnerl, H. Lu, A. Gossard, and H. B. Weber, “Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals,” Opt. Express 21, 17941–17950 (2013).
[Crossref] [PubMed]

M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
[Crossref]

M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
[Crossref]

Zaks, B.

B. Zaks, R. Liu, and M. S. Sherwin, “Experimental observation of electron-hole recollisions,” Nature (London) 483, 580–583 (2012).
[Crossref]

Zemlyakov, V. E.

V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, and S. Yu. Shapoval, “High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array,” Appl. Phys. Lett. 98, 153504 (2011).
[Crossref]

Zhao, Y.

H. Sherry, J. Grzyb, Y. Zhao, R. A. Hadi, A. Cathelin, A. Kaiser, and U. Pfeiffer, “A 1kpixel CMOS camera chip for 25 fps real-time terahertz imaging applications,” in Proceedings of Solid-State Circuits Conference Digest of Technical Papers (IEEE, 2012), pp. 252–253.

Appl. Phys. Lett. (4)

M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. Andrews, S. Scharter, and G. Strasser, “Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett. 94, 241105 (2009).
[Crossref]

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96, 042105 (2010).
[Crossref]

V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, and S. Yu. Shapoval, “High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array,” Appl. Phys. Lett. 98, 153504 (2011).
[Crossref]

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 2331–2333 (2004).
[Crossref]

IEEE Electron Device Lett. (2)

A. Mahi, H. Marinchio, C. Palermo, A. Belghachi, and L. Varani, “Enhanced THz detection through phase-controlled current response in field-effect transistors,” IEEE Electron Device Lett. 34, 795–797 (2013).
[Crossref]

A. Semenov, O. Cojocari, W. H. Song, A. Klushin, and A.-S. Müller, “Application of zero-bias quasi-optical Schottky-diode detectors for monitoring short-pulse and weak terahertz radiation,” IEEE Electron Device Lett. 31, 674–676 (2010).
[Crossref]

IEEE Trans. Microwave Theory Tech. (1)

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevicius, I. Kasalynas, G. Valusis, V. Krozer, and H. G. Roskos, “CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz,” IEEE Trans. Microwave Theory Tech. 60, 3834–3843 (2012).
[Crossref]

J. Appl. Phys. (7)

S. Preu, P. G. Burke, M. S. Sherwin, and A. C. Gossard, “An improved theory for non-resonant THz detection in field effect transistors,” J. Appl. Phys. 111, 024502 (2012).
[Crossref]

A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolivar, D. Glaab, and H. G. Roskos, “Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors,” J. Appl. Phys. 105, 114511 (2009).
[Crossref]

H. W. Hübers, G. W. Schwaab, and H. P. Röser, “Video detection and mixing performance of GaAs Schottky-barrier diodes at 30 THz and comparison with metal-insulator-metal diodes,” J. Appl. Phys. 75, 4443 (1994).
[Crossref]

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94, 3556 (2003).
[Crossref]

D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova, O. Drachenko, A. Gutin, F. F. Sizov, S. D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities,” J. Appl. Phys. 115, 164514 (2014).
[Crossref]

S. Preu, G. H. Döhler, S. Malzer, L. Wang, and A. C. Gossard, “Tunable, continuous-wave terahertz photomixer sources and applications,” J. Appl. Phys. 109, 061301 (2011).
[Crossref]

M. Sakhno, A. Goenkov, and F. Sizov, “Uncooled detector challenges: millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors,” J. Appl. Phys. 114, 164503 (2013).
[Crossref]

J. Infrared Milli. Terahz. Waves (3)

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. E. Fatimy, Y. Meziani, and T. Otsuji, “Field effect transistors for ter-ahertz detection: Physics and first imaging applications,” J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009).

M. Hoefle, K. Haehnsen, I. Oprea, O. Cojocari, A. Penirschke, and R. Jakoby, “Compact and sensitive millimetre wave detectors based on low barrier Schottky diodes on impedance matched planar antennas,” J. Infrared Milli. Terahz. Waves 35, 891–908 (2014).
[Crossref]

A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckevičius, L. Minkevičius, I. Kašalynas, D. Seliuta, G. Valusis, V. Krozer, and H. G. Roskos, “Exploration of terahertz imaging with silicon MOSFETs,” J. Infrared Milli. Terahz. Waves 35, 63–80 (2014).
[Crossref]

Nature (London) (1)

B. Zaks, R. Liu, and M. S. Sherwin, “Experimental observation of electron-hole recollisions,” Nature (London) 483, 580–583 (2012).
[Crossref]

Opt. Express (2)

Phys. Rev. B (2)

G. R. Aizin and G. Dyer, “Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: finite plasmonic crystals and Tamm states,” Phys. Rev. B 86, 235316 (2012).
[Crossref]

D. Veksler, F. Teppe, A. P. Dmitriev, V. Y. Kachorovskii, W. Knap, and M. S. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73, 125328 (2006).
[Crossref]

Phys. Rev. Lett. (2)

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71, 2465–2468 (1993).
[Crossref] [PubMed]

M. Wagner, H. Schneider, D. Stehr, S. Winnerl, A. Andrews, S. Schartner, G. Strasser, and M. Helm, “Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells,” Phys. Rev. Lett. 105, 167401 (2010).
[Crossref]

Rev. Sci. Instrum. (1)

S. Preu, H. Lu, M. S. Sherwin, and A. C. Gossard, “Detection of nanosecond-scale, high power THz pulses with a field effect transistor,” Rev. Sci. Instrum. 83, 053101 (2012).
[Crossref] [PubMed]

Other (2)

J. L. Hesler and T. W. Crowe, “Responsivity and noise measurements of zero-bias Schottky diode detectors,” in Proceedings of 18th International Symposium on Space Terahertz Technology, A. Karpov, ed. (ISSTT, 2007), p. 89.

H. Sherry, J. Grzyb, Y. Zhao, R. A. Hadi, A. Cathelin, A. Kaiser, and U. Pfeiffer, “A 1kpixel CMOS camera chip for 25 fps real-time terahertz imaging applications,” in Proceedings of Solid-State Circuits Conference Digest of Technical Papers (IEEE, 2012), pp. 252–253.

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Figures (5)

Fig. 1
Fig. 1 a) Layout of the FET devices with the ohmic source (S) and drain (D) contacts as well as the Schottky gate (G) contact. The mesas are significantly longer compared to an antenna coupled device. At the same time, the individual mesas are all connected in parallel resulting in a very low overall access resistance. b) Packaged and silicon lens coupled LA-FET detector. c) Packaged LA-FET detector E with a horn antenna instead of a silicon lens.
Fig. 2
Fig. 2 Rectified THz Signal from LA-FET A at 2.87 THz. The 1dB compression point of the detector is 0.6kW (peak power) and 8.4mV, respectively, at this frequency. The responsivity is ℜ = 17 μV/W. The Inset shows the measured oscilloscope trace using FET E at 22.3 THz with a FWHM of 24 ps. The FWHM is limited by the temporal resolution of the oscilloscope.
Fig. 3
Fig. 3 Measured responsivity of the large area field-effect transistors from 0.1 to 22 THz. The data above 1.3 THz were measured with the pulsed free electron laser FELBE, the data at the low frequency end are taken in a continuous wave setup. The individual devices show slightly different roll-offs around the f−2 guide to the eye. The dashed line corresponds to a detector behavior corrected for the amplitude distortion from the oscilloscope. Error bars have been included exemplarily for device A, disappearing behind the markers except for the CW measurement at the low frequency end. The Inset shows the 1dB peak power compression for different LA-FET devices from 1.3 up to 22 THz. A f1 guide to the eye is included.
Fig. 4
Fig. 4 Maximum signal with gate bias plotted against THz frequency. The Maximum signal with gate bias is normalized to the signal without gate bias. The straight line is a f−0.3 fit to the data of device A. The Inset shows the measurements at the single frequencies of device A versus the gate bias. No sharp resonances can be seen.
Fig. 5
Fig. 5 Attenuation from connecting cables including connectors to the oscilloscope with the used cable for devices B,C and D in blue and a cable with high quality connectors for reference in red. The cables show an additional frequency dependent damping of the signal in addition to the low pass behavior of the oscilloscope. The standing waves in the blue graph are due to small fabrication errors in the SMA connectors.

Tables (1)

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Table 1 Parameters of the measured LA-FETs. All devices except E are silicon lens coupled.

Equations (2)

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V det ( P THz ) = U N + P THz 1 + 0.259 P THz / P 1 dB .
η ( τ FWHM , f 3 dB ) = τ FWHM 2 π ln 2 0 exp ( f 2 τ FWHM 2 16 ln 2 ) 1 1 + ( f / f 3 dB ) 2 d f

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