Abstract

β-Ga2O3 films grown on Al2O3 by a metalorganic chemical vapor deposition technique were used to fabricate a solar-blind photodetector with a planar photoconductor structure. The crystal structure and quality of the β-Ga2O3 films were analyzed using X-ray diffraction and micro-Raman spectroscopy. Si ions were introduced into the β-Ga2O3 thin films by ion implantation method and activated by an annealing process to form an Ohmic contact between the Ti/Au electrode and the β-Ga2O3 film. The electrical conductivity of the β-Ga2O3 films was greatly improved by the implantation and subsequent activation of the Si ions. The photoresponse properties of the photodetectors were investigated by analyzing the current–voltage characteristics and the time-dependent photoresponse curves. The fabricated solar-blind photodetectors exhibited photoresponse to 254 nm wavelength, and blindness to 365 nm light, with a high spectral selectivity.

© 2015 Optical Society of America

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References

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]

2015 (3)

2014 (4)

D. Guo, Z. Wu, P. Li, Y. An, H. Liu, X. Guo, H. Yan, G. Wang, C. Sun, L. Li, and W. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067 (2014).
[Crossref]

S. Kumar, G. Sarau, C. Tessarek, M. Y. Bashouti, A. Hähnel, S. Christiansen, and R. Singh, “Study of iron-catalysed growth of β-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques,” J. Phys. D Appl. Phys. 47(43), 435101 (2014).
[Crossref]

S. Kim, S. J. Kim, K. H. Kim, H. Kim, and T. Kim, “Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 211(11), 2569–2573 (2014).
[Crossref]

W. Feng, X. Wang, J. Zhang, L. Wang, W. Zheng, P. Hu, W. Caob, and B. Yang, “Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(17), 3254–3259 (2014).
[Crossref]

2013 (6)

S. Nakagomi, T. Momo, S. Takahashi, and Y. Kokubun, “Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction,” Appl. Phys. Lett. 103(7), 072105 (2013).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

K. H. Kim, H. M. An, H. D. Kim, and T. G. Kim, “Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes,” Nanoscale Res. Lett. 8(1), 507 (2013).
[Crossref] [PubMed]

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

L. Peng, L. Hu, and X. Fang, “Low-Dimensional Nanostructure Ultraviolet Photodetectors,” Adv. Mater. 25(37), 5321–5328 (2013).
[Crossref] [PubMed]

L. Sang, M. Liao, and M. Sumiya, “A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures,” Sensors (Basel) 13(8), 10482–10518 (2013).
[Crossref] [PubMed]

2012 (1)

K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, and C. Claeys, “Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si,” Physica B 407(15), 2900–2902 (2012).
[Crossref]

2011 (3)

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

M. Chen, L. Hu, J. Xu, M. Liao, L. Wu, and X. Fang, “ZnO Hollow-Sphere Nanofilm-Based High-Performance and Low-Cost Photodetector,” Small 7(17), 2449–2453 (2011).
[PubMed]

S. Bai, W. Wu, Y. Qin, N. Cui, D. J. Bayerl, and X. Wang, “High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates,” Adv. Funct. Mater. 21(23), 4464–4469 (2011).
[Crossref]

2010 (2)

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

C.-H. Ho, C.-Y. Tseng, and L.-C. Tien, “Thermoreflectance characterization of β-Ga2O3 thin-film nanostrips,” Opt. Express 18(16), 16360–16369 (2010).
[Crossref] [PubMed]

2009 (2)

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

2008 (1)

E. G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, and K. Aoki, “Electrical conductivity and carrier concentration control in β - Ga2O3 by Si doping,” Appl. Phys. Lett. 92(20), 202120 (2008).
[Crossref]

2007 (2)

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

2006 (2)

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

J. H. Kim, B. D. Ahn, C. H. Lee, K. A. Jeon, H. S. Kang, and S. Y. Lee, “Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature,” J. Appl. Phys. 100(11), 113515 (2006).
[Crossref]

2005 (1)

F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, “Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition,” J. Appl. Phys. 98(2), 023504 (2005).
[Crossref]

2003 (1)

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet Photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

2002 (1)

M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, “Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures,” Thin Solid Films 411(1), 134–139 (2002).
[Crossref]

2001 (2)

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

M. Kadleíková, J. Breza, and M. Veselý, “Raman spectra of synthetic sapphire,” Microelectronics J. 32(12), 955–958 (2001).
[Crossref]

1999 (1)

E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Si-doped AlxGa1-xN photoconductive detectors,” Semicond. Sci. Technol. 14(8), 685–689 (1999).
[Crossref]

1964 (1)

M. DiDomenic and O. Svelto, “Solid-state photodetection: A comparison between photodiodes and photoconductors,” Proc. IEEE 52(2), 136–144 (1964).
[Crossref]

Ahn, B. D.

J. H. Kim, B. D. Ahn, C. H. Lee, K. A. Jeon, H. S. Kang, and S. Y. Lee, “Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature,” J. Appl. Phys. 100(11), 113515 (2006).
[Crossref]

An, H. M.

K. H. Kim, H. M. An, H. D. Kim, and T. G. Kim, “Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes,” Nanoscale Res. Lett. 8(1), 507 (2013).
[Crossref] [PubMed]

An, Y.

Aoki, K.

E. G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, and K. Aoki, “Electrical conductivity and carrier concentration control in β - Ga2O3 by Si doping,” Appl. Phys. Lett. 92(20), 202120 (2008).
[Crossref]

Bai, S.

S. Bai, W. Wu, Y. Qin, N. Cui, D. J. Bayerl, and X. Wang, “High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates,” Adv. Funct. Mater. 21(23), 4464–4469 (2011).
[Crossref]

Bashouti, M. Y.

S. Kumar, G. Sarau, C. Tessarek, M. Y. Bashouti, A. Hähnel, S. Christiansen, and R. Singh, “Study of iron-catalysed growth of β-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques,” J. Phys. D Appl. Phys. 47(43), 435101 (2014).
[Crossref]

Bayerl, D. J.

S. Bai, W. Wu, Y. Qin, N. Cui, D. J. Bayerl, and X. Wang, “High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates,” Adv. Funct. Mater. 21(23), 4464–4469 (2011).
[Crossref]

Beaumont, B.

E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Si-doped AlxGa1-xN photoconductive detectors,” Semicond. Sci. Technol. 14(8), 685–689 (1999).
[Crossref]

Breza, J.

M. Kadleíková, J. Breza, and M. Veselý, “Raman spectra of synthetic sapphire,” Microelectronics J. 32(12), 955–958 (2001).
[Crossref]

Calle, F.

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet Photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Si-doped AlxGa1-xN photoconductive detectors,” Semicond. Sci. Technol. 14(8), 685–689 (1999).
[Crossref]

Caob, W.

W. Feng, X. Wang, J. Zhang, L. Wang, W. Zheng, P. Hu, W. Caob, and B. Yang, “Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(17), 3254–3259 (2014).
[Crossref]

Chen, K. M.

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

Chen, M.

M. Chen, L. Hu, J. Xu, M. Liao, L. Wu, and X. Fang, “ZnO Hollow-Sphere Nanofilm-Based High-Performance and Low-Cost Photodetector,” Small 7(17), 2449–2453 (2011).
[PubMed]

Christiansen, S.

S. Kumar, G. Sarau, C. Tessarek, M. Y. Bashouti, A. Hähnel, S. Christiansen, and R. Singh, “Study of iron-catalysed growth of β-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques,” J. Phys. D Appl. Phys. 47(43), 435101 (2014).
[Crossref]

Claeys, C.

K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, and C. Claeys, “Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si,” Physica B 407(15), 2900–2902 (2012).
[Crossref]

Cui, N.

S. Bai, W. Wu, Y. Qin, N. Cui, D. J. Bayerl, and X. Wang, “High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates,” Adv. Funct. Mater. 21(23), 4464–4469 (2011).
[Crossref]

Delaunay, J.-J.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

DiDomenic, M.

M. DiDomenic and O. Svelto, “Solid-state photodetection: A comparison between photodiodes and photoconductors,” Proc. IEEE 52(2), 136–144 (1964).
[Crossref]

Du, J.

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

Du, X.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Endo, F.

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Fan, J.

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

Fang, X.

L. Peng, L. Hu, and X. Fang, “Low-Dimensional Nanostructure Ultraviolet Photodetectors,” Adv. Mater. 25(37), 5321–5328 (2013).
[Crossref] [PubMed]

M. Chen, L. Hu, J. Xu, M. Liao, L. Wu, and X. Fang, “ZnO Hollow-Sphere Nanofilm-Based High-Performance and Low-Cost Photodetector,” Small 7(17), 2449–2453 (2011).
[PubMed]

Feng, W.

W. Feng, X. Wang, J. Zhang, L. Wang, W. Zheng, P. Hu, W. Caob, and B. Yang, “Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(17), 3254–3259 (2014).
[Crossref]

Fujita, S.

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

Funasaki, S.

K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, and C. Claeys, “Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si,” Physica B 407(15), 2900–2902 (2012).
[Crossref]

Garrido, J. A.

E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Si-doped AlxGa1-xN photoconductive detectors,” Semicond. Sci. Technol. 14(8), 685–689 (1999).
[Crossref]

Gibart, P.

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Si-doped AlxGa1-xN photoconductive detectors,” Semicond. Sci. Technol. 14(8), 685–689 (1999).
[Crossref]

Guo, D.

Guo, X.

Guo, Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Guo, Z.

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

Hähnel, A.

S. Kumar, G. Sarau, C. Tessarek, M. Y. Bashouti, A. Hähnel, S. Christiansen, and R. Singh, “Study of iron-catalysed growth of β-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques,” J. Phys. D Appl. Phys. 47(43), 435101 (2014).
[Crossref]

He, H.

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

Hickman, A.

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

Higashiwaki, M.

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

Hiramatsu, H.

M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, “Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures,” Thin Solid Films 411(1), 134–139 (2002).
[Crossref]

Hirano, M.

M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, “Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures,” Thin Solid Films 411(1), 134–139 (2002).
[Crossref]

Ho, C.-H.

Hosono, H.

M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, “Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures,” Thin Solid Films 411(1), 134–139 (2002).
[Crossref]

Hou, Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Hu, G. C.

Hu, L.

L. Peng, L. Hu, and X. Fang, “Low-Dimensional Nanostructure Ultraviolet Photodetectors,” Adv. Mater. 25(37), 5321–5328 (2013).
[Crossref] [PubMed]

M. Chen, L. Hu, J. Xu, M. Liao, L. Wu, and X. Fang, “ZnO Hollow-Sphere Nanofilm-Based High-Performance and Low-Cost Photodetector,” Small 7(17), 2449–2453 (2011).
[PubMed]

Hu, P.

W. Feng, X. Wang, J. Zhang, L. Wang, W. Zheng, P. Hu, W. Caob, and B. Yang, “Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(17), 3254–3259 (2014).
[Crossref]

Jena, D.

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

Jeon, K. A.

J. H. Kim, B. D. Ahn, C. H. Lee, K. A. Jeon, H. S. Kang, and S. Y. Lee, “Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature,” J. Appl. Phys. 100(11), 113515 (2006).
[Crossref]

Ji, Z.

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

Jiang, M. M.

Ju, Z. G.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Kadleíková, M.

M. Kadleíková, J. Breza, and M. Veselý, “Raman spectra of synthetic sapphire,” Microelectronics J. 32(12), 955–958 (2001).
[Crossref]

Kang, H. S.

J. H. Kim, B. D. Ahn, C. H. Lee, K. A. Jeon, H. S. Kang, and S. Y. Lee, “Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature,” J. Appl. Phys. 100(11), 113515 (2006).
[Crossref]

Kim, H.

S. Kim, S. J. Kim, K. H. Kim, H. Kim, and T. Kim, “Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 211(11), 2569–2573 (2014).
[Crossref]

Kim, H. D.

K. H. Kim, H. M. An, H. D. Kim, and T. G. Kim, “Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes,” Nanoscale Res. Lett. 8(1), 507 (2013).
[Crossref] [PubMed]

Kim, I. S.

F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, “Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition,” J. Appl. Phys. 98(2), 023504 (2005).
[Crossref]

Kim, J. H.

J. H. Kim, B. D. Ahn, C. H. Lee, K. A. Jeon, H. S. Kang, and S. Y. Lee, “Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature,” J. Appl. Phys. 100(11), 113515 (2006).
[Crossref]

Kim, K. H.

S. Kim, S. J. Kim, K. H. Kim, H. Kim, and T. Kim, “Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 211(11), 2569–2573 (2014).
[Crossref]

K. H. Kim, H. M. An, H. D. Kim, and T. G. Kim, “Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes,” Nanoscale Res. Lett. 8(1), 507 (2013).
[Crossref] [PubMed]

Kim, S.

S. Kim, S. J. Kim, K. H. Kim, H. Kim, and T. Kim, “Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 211(11), 2569–2573 (2014).
[Crossref]

Kim, S. J.

S. Kim, S. J. Kim, K. H. Kim, H. Kim, and T. Kim, “Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 211(11), 2569–2573 (2014).
[Crossref]

Kim, T.

S. Kim, S. J. Kim, K. H. Kim, H. Kim, and T. Kim, “Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 211(11), 2569–2573 (2014).
[Crossref]

Kim, T. G.

K. H. Kim, H. M. An, H. D. Kim, and T. G. Kim, “Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes,” Nanoscale Res. Lett. 8(1), 507 (2013).
[Crossref] [PubMed]

Koide, Y.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Kokubun, Y.

S. Nakagomi, T. Momo, S. Takahashi, and Y. Kokubun, “Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction,” Appl. Phys. Lett. 103(7), 072105 (2013).
[Crossref]

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Kumar, S.

S. Kumar, G. Sarau, C. Tessarek, M. Y. Bashouti, A. Hähnel, S. Christiansen, and R. Singh, “Study of iron-catalysed growth of β-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques,” J. Phys. D Appl. Phys. 47(43), 435101 (2014).
[Crossref]

Kuramata, A.

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

Kuznetsov, A. Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Lee, C. H.

J. H. Kim, B. D. Ahn, C. H. Lee, K. A. Jeon, H. S. Kang, and S. Y. Lee, “Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature,” J. Appl. Phys. 100(11), 113515 (2006).
[Crossref]

Lee, G. H.

F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, “Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition,” J. Appl. Phys. 98(2), 023504 (2005).
[Crossref]

Lee, S. Y.

J. H. Kim, B. D. Ahn, C. H. Lee, K. A. Jeon, H. S. Kang, and S. Y. Lee, “Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature,” J. Appl. Phys. 100(11), 113515 (2006).
[Crossref]

Lee, W. J.

F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, “Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition,” J. Appl. Phys. 98(2), 023504 (2005).
[Crossref]

Li, B. H.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Li, L.

Li, P.

Li, Y.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Liao, M.

L. Sang, M. Liao, and M. Sumiya, “A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures,” Sensors (Basel) 13(8), 10482–10518 (2013).
[Crossref] [PubMed]

M. Chen, L. Hu, J. Xu, M. Liao, L. Wu, and X. Fang, “ZnO Hollow-Sphere Nanofilm-Based High-Performance and Low-Cost Photodetector,” Small 7(17), 2449–2453 (2011).
[PubMed]

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Lien, D. H.

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

Lien, W. C.

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

Liu, G. X.

F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, “Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition,” J. Appl. Phys. 98(2), 023504 (2005).
[Crossref]

Liu, H.

Liu, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Luo, T.

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

Masui, T.

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

Mei, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Miura, K.

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Momo, T.

S. Nakagomi, T. Momo, S. Takahashi, and Y. Kokubun, “Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction,” Appl. Phys. Lett. 103(7), 072105 (2013).
[Crossref]

Monroy, E.

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet Photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Si-doped AlxGa1-xN photoconductive detectors,” Semicond. Sci. Technol. 14(8), 685–689 (1999).
[Crossref]

Muñoz, E.

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Si-doped AlxGa1-xN photoconductive detectors,” Semicond. Sci. Technol. 14(8), 685–689 (1999).
[Crossref]

Nakagomi, S.

S. Nakagomi, T. Momo, S. Takahashi, and Y. Kokubun, “Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction,” Appl. Phys. Lett. 103(7), 072105 (2013).
[Crossref]

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Nakashima, T.

K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, and C. Claeys, “Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si,” Physica B 407(15), 2900–2902 (2012).
[Crossref]

Ohta, H.

M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, “Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures,” Thin Solid Films 411(1), 134–139 (2002).
[Crossref]

Ohyama, H.

K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, and C. Claeys, “Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si,” Physica B 407(15), 2900–2902 (2012).
[Crossref]

Okuno, T.

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

Omnès, F.

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet Photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Si-doped AlxGa1-xN photoconductive detectors,” Semicond. Sci. Technol. 14(8), 685–689 (1999).
[Crossref]

Orita, M.

M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, “Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures,” Thin Solid Films 411(1), 134–139 (2002).
[Crossref]

Oshima, T.

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

Ou, S.-L.

Pau, J. L.

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Peng, L.

L. Peng, L. Hu, and X. Fang, “Low-Dimensional Nanostructure Ultraviolet Photodetectors,” Adv. Mater. 25(37), 5321–5328 (2013).
[Crossref] [PubMed]

Pisano, A. P.

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

Qin, Y.

S. Bai, W. Wu, Y. Qin, N. Cui, D. J. Bayerl, and X. Wang, “High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates,” Adv. Funct. Mater. 21(23), 4464–4469 (2011).
[Crossref]

Sang, L.

L. Sang, M. Liao, and M. Sumiya, “A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures,” Sensors (Basel) 13(8), 10482–10518 (2013).
[Crossref] [PubMed]

Sarau, G.

S. Kumar, G. Sarau, C. Tessarek, M. Y. Bashouti, A. Hähnel, S. Christiansen, and R. Singh, “Study of iron-catalysed growth of β-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques,” J. Phys. D Appl. Phys. 47(43), 435101 (2014).
[Crossref]

Sasaki, K.

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

Senesky, D. G.

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

Shan, C. X.

G. C. Hu, C. X. Shan, N. Zhang, M. M. Jiang, S. P. Wang, and D. Z. Shen, “High gain Ga₂O₃ solar-blind photodetectors realized via a carrier multiplication process,” Opt. Express 23(10), 13554–13561 (2015).
[Crossref] [PubMed]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Shan, F. K.

F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, “Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition,” J. Appl. Phys. 98(2), 023504 (2005).
[Crossref]

Shen, D. Z.

G. C. Hu, C. X. Shan, N. Zhang, M. M. Jiang, S. P. Wang, and D. Z. Shen, “High gain Ga₂O₃ solar-blind photodetectors realized via a carrier multiplication process,” Opt. Express 23(10), 13554–13561 (2015).
[Crossref] [PubMed]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Shimamura, K.

E. G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, and K. Aoki, “Electrical conductivity and carrier concentration control in β - Ga2O3 by Si doping,” Appl. Phys. Lett. 92(20), 202120 (2008).
[Crossref]

Shin, B. C.

F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, “Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition,” J. Appl. Phys. 98(2), 023504 (2005).
[Crossref]

Singh, R.

S. Kumar, G. Sarau, C. Tessarek, M. Y. Bashouti, A. Hähnel, S. Christiansen, and R. Singh, “Study of iron-catalysed growth of β-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques,” J. Phys. D Appl. Phys. 47(43), 435101 (2014).
[Crossref]

Sumiya, M.

L. Sang, M. Liao, and M. Sumiya, “A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures,” Sensors (Basel) 13(8), 10482–10518 (2013).
[Crossref] [PubMed]

Sun, C.

Sun, F.

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

Suzuki, R.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Svelto, O.

M. DiDomenic and O. Svelto, “Solid-state photodetection: A comparison between photodiodes and photoconductors,” Proc. IEEE 52(2), 136–144 (1964).
[Crossref]

Takahashi, S.

S. Nakagomi, T. Momo, S. Takahashi, and Y. Kokubun, “Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction,” Appl. Phys. Lett. 103(7), 072105 (2013).
[Crossref]

Takakura, K.

K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, and C. Claeys, “Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si,” Physica B 407(15), 2900–2902 (2012).
[Crossref]

Takeuchi, D.

K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, and C. Claeys, “Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si,” Physica B 407(15), 2900–2902 (2012).
[Crossref]

Tang, W.

Tessarek, C.

S. Kumar, G. Sarau, C. Tessarek, M. Y. Bashouti, A. Hähnel, S. Christiansen, and R. Singh, “Study of iron-catalysed growth of β-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques,” J. Phys. D Appl. Phys. 47(43), 435101 (2014).
[Crossref]

Tien, L.-C.

Tokizono, T.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Tsai, D. S.

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

Tsai, M. L.

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

Tseng, C.-Y.

Tsunoda, I.

K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, and C. Claeys, “Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si,” Physica B 407(15), 2900–2902 (2012).
[Crossref]

Ujiie, T.

E. G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, and K. Aoki, “Electrical conductivity and carrier concentration control in β - Ga2O3 by Si doping,” Appl. Phys. Lett. 92(20), 202120 (2008).
[Crossref]

Verma, A.

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

Veselý, M.

M. Kadleíková, J. Breza, and M. Veselý, “Raman spectra of synthetic sapphire,” Microelectronics J. 32(12), 955–958 (2001).
[Crossref]

Víllora, E. G.

E. G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, and K. Aoki, “Electrical conductivity and carrier concentration control in β - Ga2O3 by Si doping,” Appl. Phys. Lett. 92(20), 202120 (2008).
[Crossref]

Wang, G.

Wang, L.

W. Feng, X. Wang, J. Zhang, L. Wang, W. Zheng, P. Hu, W. Caob, and B. Yang, “Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(17), 3254–3259 (2014).
[Crossref]

Wang, L. K.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Wang, S. P.

Wang, W.

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

Wang, X.

W. Feng, X. Wang, J. Zhang, L. Wang, W. Zheng, P. Hu, W. Caob, and B. Yang, “Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(17), 3254–3259 (2014).
[Crossref]

S. Bai, W. Wu, Y. Qin, N. Cui, D. J. Bayerl, and X. Wang, “High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates,” Adv. Funct. Mater. 21(23), 4464–4469 (2011).
[Crossref]

Wu, L.

M. Chen, L. Hu, J. Xu, M. Liao, L. Wu, and X. Fang, “ZnO Hollow-Sphere Nanofilm-Based High-Performance and Low-Cost Photodetector,” Small 7(17), 2449–2453 (2011).
[PubMed]

Wu, W.

S. Bai, W. Wu, Y. Qin, N. Cui, D. J. Bayerl, and X. Wang, “High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates,” Adv. Funct. Mater. 21(23), 4464–4469 (2011).
[Crossref]

Wu, X.

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

Wu, Z.

Wuu, D.-S.

Xu, J.

M. Chen, L. Hu, J. Xu, M. Liao, L. Wu, and X. Fang, “ZnO Hollow-Sphere Nanofilm-Based High-Performance and Low-Cost Photodetector,” Small 7(17), 2449–2453 (2011).
[PubMed]

Xue, Q.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Yamada, I.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Yamakoshi, S.

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

Yan, H.

Yang, B.

W. Feng, X. Wang, J. Zhang, L. Wang, W. Zheng, P. Hu, W. Caob, and B. Yang, “Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(17), 3254–3259 (2014).
[Crossref]

Yao, B.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Yoshikawa, Y.

E. G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, and K. Aoki, “Electrical conductivity and carrier concentration control in β - Ga2O3 by Si doping,” Appl. Phys. Lett. 92(20), 202120 (2008).
[Crossref]

Youinou, P.

E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Si-doped AlxGa1-xN photoconductive detectors,” Semicond. Sci. Technol. 14(8), 685–689 (1999).
[Crossref]

Yu, F.-P.

Yu, Y. C.

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

Zhang, J.

W. Feng, X. Wang, J. Zhang, L. Wang, W. Zheng, P. Hu, W. Caob, and B. Yang, “Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(17), 3254–3259 (2014).
[Crossref]

Zhang, J. Y.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Zhang, N.

Zhang, T.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Zhang, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Zhang, Z. Z.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Zhao, D. X.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Zheng, J.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Zheng, W.

W. Feng, X. Wang, J. Zhang, L. Wang, W. Zheng, P. Hu, W. Caob, and B. Yang, “Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(17), 3254–3259 (2014).
[Crossref]

Zhong, M.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Adv. Funct. Mater. (2)

S. Bai, W. Wu, Y. Qin, N. Cui, D. J. Bayerl, and X. Wang, “High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates,” Adv. Funct. Mater. 21(23), 4464–4469 (2011).
[Crossref]

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Adv. Mater. (2)

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

L. Peng, L. Hu, and X. Fang, “Low-Dimensional Nanostructure Ultraviolet Photodetectors,” Adv. Mater. 25(37), 5321–5328 (2013).
[Crossref] [PubMed]

Appl. Phys. Express (1)

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, “Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts,” Appl. Phys. Express 6(8), 086502 (2013).
[Crossref]

Appl. Phys. Lett. (6)

Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, “Anisotropic thermal conductivity in single crystal β-gallium oxide,” Appl. Phys. Lett. 106(11), 111909 (2015).
[Crossref]

E. G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, and K. Aoki, “Electrical conductivity and carrier concentration control in β - Ga2O3 by Si doping,” Appl. Phys. Lett. 92(20), 202120 (2008).
[Crossref]

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline Cubic MgZnO Films and their Application in Deep-Ultraviolet Optoelectronic Devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

S. Nakagomi, T. Momo, S. Takahashi, and Y. Kokubun, “Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction,” Appl. Phys. Lett. 103(7), 072105 (2013).
[Crossref]

J. Appl. Phys. (2)

F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, “Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition,” J. Appl. Phys. 98(2), 023504 (2005).
[Crossref]

J. H. Kim, B. D. Ahn, C. H. Lee, K. A. Jeon, H. S. Kang, and S. Y. Lee, “Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature,” J. Appl. Phys. 100(11), 113515 (2006).
[Crossref]

J. Mater. Chem. C Mater. Opt. Electron. Devices (1)

W. Feng, X. Wang, J. Zhang, L. Wang, W. Zheng, P. Hu, W. Caob, and B. Yang, “Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(17), 3254–3259 (2014).
[Crossref]

J. Phys. Condens. Matter (1)

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

J. Phys. D Appl. Phys. (1)

S. Kumar, G. Sarau, C. Tessarek, M. Y. Bashouti, A. Hähnel, S. Christiansen, and R. Singh, “Study of iron-catalysed growth of β-Ga2O3 nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques,” J. Phys. D Appl. Phys. 47(43), 435101 (2014).
[Crossref]

Jpn. J. Appl. Phys. (1)

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

Microelectronics J. (1)

M. Kadleíková, J. Breza, and M. Veselý, “Raman spectra of synthetic sapphire,” Microelectronics J. 32(12), 955–958 (2001).
[Crossref]

Nanoscale Res. Lett. (1)

K. H. Kim, H. M. An, H. D. Kim, and T. G. Kim, “Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes,” Nanoscale Res. Lett. 8(1), 507 (2013).
[Crossref] [PubMed]

Opt. Express (2)

Opt. Mater. (1)

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

Opt. Mater. Express (2)

Phys. Status Solidi., A Appl. Mater. Sci. (1)

S. Kim, S. J. Kim, K. H. Kim, H. Kim, and T. Kim, “Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 211(11), 2569–2573 (2014).
[Crossref]

Physica B (1)

K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, and C. Claeys, “Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si,” Physica B 407(15), 2900–2902 (2012).
[Crossref]

Proc. IEEE (1)

M. DiDomenic and O. Svelto, “Solid-state photodetection: A comparison between photodiodes and photoconductors,” Proc. IEEE 52(2), 136–144 (1964).
[Crossref]

Sci. Rep. (1)

D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, and H. He, “Solar-Blind Photodetectors for Harsh Electronics,” Sci. Rep. 4, 1 (2013).

Semicond. Sci. Technol. (2)

E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Si-doped AlxGa1-xN photoconductive detectors,” Semicond. Sci. Technol. 14(8), 685–689 (1999).
[Crossref]

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet Photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

Sensors (Basel) (1)

L. Sang, M. Liao, and M. Sumiya, “A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures,” Sensors (Basel) 13(8), 10482–10518 (2013).
[Crossref] [PubMed]

Small (1)

M. Chen, L. Hu, J. Xu, M. Liao, L. Wu, and X. Fang, “ZnO Hollow-Sphere Nanofilm-Based High-Performance and Low-Cost Photodetector,” Small 7(17), 2449–2453 (2011).
[PubMed]

Thin Solid Films (1)

M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, “Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures,” Thin Solid Films 411(1), 134–139 (2002).
[Crossref]

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Figures (3)

Fig. 1
Fig. 1 Schematic of the fabrication process: (a) β-Ga2O3 films grown by MOCVD technique on Al2O3, (b) Si-ion implantation process, (c) the fabricated photodetector device, and (d) Si-ion depth profile in β-Ga2O3 films by SRIM simulation.
Fig. 2
Fig. 2 (a) X-ray diffraction results and (b) Raman spectrum of Si-implanted β-Ga2O3 films grown on Al2O3 substrate. (c) Sheet resistance (RS) of Si-implanted β-Ga2O3 films after the RTA process and (d) optical microscope image of the fabricated device.
Fig. 3
Fig. 3 (a) I–V characteristics and (b) time-dependent photoresponse of the Ga2O3 solar-blind photodetectors under dark conditions and illumination with 254 nm and 365 nm UV light. Experimental data and fitted curve of the rise and decay process in response to (c) 254 nm and (d) 365 nm illumination, respectively.

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