Abstract

We report high power distributed Bragg reflector (DBR)-free semiconductor disk lasers. With active regions lifted off and bonded to various transparent heatspreaders, the high thermal impedance and narrow bandwidth of DBRs are mitigated. For a strained InGaAs multi-quantum-well sample bonded to a single-crystalline chemical-vapor deposited diamond, a maximum CW output power of 2.5 W and a record 78 nm tuning range centered at λ≈1160 nm was achieved. Laser operation using a total internal reflection geometry is also demonstrated. Furthermore, analysis for power scaling, based on thermal management, is presented.

© 2015 Optical Society of America

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High power (>0.5-W CW) diode pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).
    [Crossref]
  2. W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
    [Crossref]
  3. M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
    [Crossref]
  4. B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
    [Crossref]
  5. J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
    [Crossref]
  6. E. Kantola, T. Leinonen, S. Ranta, M. Tavast, and M. Guina, “High-efficiency 20 W yellow VECSEL,” Opt. Express 22(6), 6372–6380 (2014).
    [Crossref] [PubMed]
  7. D. J. M. Stothard, J.-M. Hopkins, D. Burns, and M. H. Dunn, “Stable, continuous-wave, intracavity, optical parametric oscillator pumped by a semiconductor disk laser (VECSEL),” Opt. Express 17(13), 10648–10658 (2009).
    [Crossref] [PubMed]
  8. S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
    [Crossref]
  9. M. Ghasemkhani, A. R. Albrecht, S. D. Melgaard, D. V. Seletskiy, J. G. Cederberg, and M. Sheik-Bahae, “Intra-cavity cryogenic optical refrigeration using high power vertical external-cavity surface-emitting lasers (VECSELs),” Opt. Express 22(13), 16232–16240 (2014).
    [Crossref] [PubMed]
  10. J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
    [Crossref] [PubMed]
  11. S. T. Keller, A. Sirbu, V. Iakovlev, A. Caliman, A. Mereuta, and E. Kapon, “8.5 W VECSEL output at 1270 nm with conversion efficiency of 59%,” Opt. Express 23(13), 17437–17442 (2015).
    [Crossref] [PubMed]
  12. C. B. Roxlo, D. Bebelaar, and M. M. Salour, “Tunable cw bulk semiconductor platelet laser,” Appl. Phys. Lett. 38(7), 507–509 (1981).
    [Crossref]
  13. E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, “Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates,” Appl. Phys. Lett. 56(24), 2419–2421 (1990).
    [Crossref]
  14. C. G. Wang, C. Y. Li, M. P. Hasselbeck, B. Imangholi, and M. Sheik-Bahae, “Precision, all-optical measurement of external quantum efficiency in semiconductors,” J. Appl. Phys. 109(9), 093108 (2011).
    [Crossref]
  15. L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
    [Crossref]
  16. M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
    [Crossref]
  17. D. W. Hughes, J. R. M. Barr, and D. C. Hanna, “Mode locking of a diode-laser-pumped Nd:glass laser by frequency modulation,” Opt. Lett. 16(3), 147–149 (1991).
    [Crossref] [PubMed]
  18. Z. Yang, A. R. Albrecht, J. G. Cederberg, and M. Sheik-Bahae, “DBR-free optically pumped semiconductor disk lasers,” Proc. SPIE 9349, 934905 (2015).
    [Crossref]
  19. A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
    [Crossref]

2015 (2)

Z. Yang, A. R. Albrecht, J. G. Cederberg, and M. Sheik-Bahae, “DBR-free optically pumped semiconductor disk lasers,” Proc. SPIE 9349, 934905 (2015).
[Crossref]

S. T. Keller, A. Sirbu, V. Iakovlev, A. Caliman, A. Mereuta, and E. Kapon, “8.5 W VECSEL output at 1270 nm with conversion efficiency of 59%,” Opt. Express 23(13), 17437–17442 (2015).
[Crossref] [PubMed]

2014 (2)

2013 (1)

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

2012 (1)

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

2011 (2)

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

C. G. Wang, C. Y. Li, M. P. Hasselbeck, B. Imangholi, and M. Sheik-Bahae, “Precision, all-optical measurement of external quantum efficiency in semiconductors,” J. Appl. Phys. 109(9), 093108 (2011).
[Crossref]

2009 (1)

2008 (1)

2007 (1)

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

2005 (2)

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]

J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
[Crossref]

2000 (1)

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

1997 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High power (>0.5-W CW) diode pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

1991 (1)

1990 (1)

E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, “Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates,” Appl. Phys. Lett. 56(24), 2419–2421 (1990).
[Crossref]

1989 (1)

M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[Crossref]

1981 (1)

C. B. Roxlo, D. Bebelaar, and M. M. Salour, “Tunable cw bulk semiconductor platelet laser,” Appl. Phys. Lett. 38(7), 507–509 (1981).
[Crossref]

Albrecht, A. R.

Alford, W. J.

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Barr, J. R. M.

Bebelaar, D.

C. B. Roxlo, D. Bebelaar, and M. M. Salour, “Tunable cw bulk semiconductor platelet laser,” Appl. Phys. Lett. 38(7), 507–509 (1981).
[Crossref]

Bedford, R.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Brennan, T. M.

M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[Crossref]

Brueck, S. R. J.

M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[Crossref]

Burns, D.

D. J. M. Stothard, J.-M. Hopkins, D. Burns, and M. H. Dunn, “Stable, continuous-wave, intracavity, optical parametric oscillator pumped by a semiconductor disk laser (VECSEL),” Opt. Express 17(13), 10648–10658 (2009).
[Crossref] [PubMed]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]

Butkua, M.

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Caliman, A.

Calvez, S.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]

Caprara, A. L.

J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
[Crossref]

Cederberg, J. G.

Chilla, J. L. A.

J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
[Crossref]

Dawson, M. D.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]

Dhanjal, S.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Dunn, M. H.

Epstein, R. J.

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Fallahi, M.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Fan, L.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Fetzer, G. J.

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Florez, L. T.

E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, “Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates,” Appl. Phys. Lett. 56(24), 2419–2421 (1990).
[Crossref]

Ghasemkhani, M.

Gmitter, T. J.

E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, “Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates,” Appl. Phys. Lett. 56(24), 2419–2421 (1990).
[Crossref]

Govorkov, S. V.

J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
[Crossref]

Guina, M.

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, and M. Guina, “High-efficiency 20 W yellow VECSEL,” Opt. Express 22(6), 6372–6380 (2014).
[Crossref] [PubMed]

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Hader, J.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High power (>0.5-W CW) diode pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

Hamilton, C. J.

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Hammons, B. E.

M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[Crossref]

Hanna, D. C.

Harbison, J. P.

E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, “Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates,” Appl. Phys. Lett. 56(24), 2419–2421 (1990).
[Crossref]

Häring, R.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Hasselbeck, M. P.

C. G. Wang, C. Y. Li, M. P. Hasselbeck, B. Imangholi, and M. Sheik-Bahae, “Precision, all-optical measurement of external quantum efficiency in semiconductors,” J. Appl. Phys. 109(9), 093108 (2011).
[Crossref]

Hastie, J. E.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]

Heinen, B.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Hessenius, C.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Hoogland, S.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Hopkins, J.-M.

D. J. M. Stothard, J.-M. Hopkins, D. Burns, and M. H. Dunn, “Stable, continuous-wave, intracavity, optical parametric oscillator pumped by a semiconductor disk laser (VECSEL),” Opt. Express 17(13), 10648–10658 (2009).
[Crossref] [PubMed]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]

Hughes, D. W.

Hwang, D. M.

E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, “Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates,” Appl. Phys. Lett. 56(24), 2419–2421 (1990).
[Crossref]

Iakovlev, V.

Imangholi, B.

C. G. Wang, C. Y. Li, M. P. Hasselbeck, B. Imangholi, and M. Sheik-Bahae, “Precision, all-optical measurement of external quantum efficiency in semiconductors,” J. Appl. Phys. 109(9), 093108 (2011).
[Crossref]

Kantola, E.

Kapon, E.

Keller, S. T.

Keller, U.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Kemp, A. J.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]

Koch, M.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Koch, S. W.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Krestnikov, I. L.

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Kunert, B.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High power (>0.5-W CW) diode pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

Leinonen, T.

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, and M. Guina, “High-efficiency 20 W yellow VECSEL,” Opt. Express 22(6), 6372–6380 (2014).
[Crossref] [PubMed]

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Li, C. Y.

C. G. Wang, C. Y. Li, M. P. Hasselbeck, B. Imangholi, and M. Sheik-Bahae, “Precision, all-optical measurement of external quantum efficiency in semiconductors,” J. Appl. Phys. 109(9), 093108 (2011).
[Crossref]

Li, H.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Livshits, D. A.

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Lyytikäinen, J.

Malcolm, G. P. A.

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

McInerney, J. G.

M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[Crossref]

Melgaard, S. D.

Mereuta, A.

Mikhrin, S. S.

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Moloney, J. V.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High power (>0.5-W CW) diode pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

Morier-Genoud, F.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Murray, J. T.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Okhotnikov, O. G.

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[Crossref] [PubMed]

Osinski, M.

M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[Crossref]

Paschotta, R.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Rafailov, E. U.

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

Raja, A.

M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[Crossref]

Ranta, S.

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, and M. Guina, “High-efficiency 20 W yellow VECSEL,” Opt. Express 22(6), 6372–6380 (2014).
[Crossref] [PubMed]

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Rautiainen, J.

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[Crossref] [PubMed]

Reed, M. K.

J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
[Crossref]

Roberts, J. S.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Roxlo, C. B.

C. B. Roxlo, D. Bebelaar, and M. M. Salour, “Tunable cw bulk semiconductor platelet laser,” Appl. Phys. Lett. 38(7), 507–509 (1981).
[Crossref]

Salour, M. M.

C. B. Roxlo, D. Bebelaar, and M. M. Salour, “Tunable cw bulk semiconductor platelet laser,” Appl. Phys. Lett. 38(7), 507–509 (1981).
[Crossref]

Sandalphon, N.

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Schaus, C. F.

M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[Crossref]

Seletskiy, D. V.

Sheik-Bahae, M.

Z. Yang, A. R. Albrecht, J. G. Cederberg, and M. Sheik-Bahae, “DBR-free optically pumped semiconductor disk lasers,” Proc. SPIE 9349, 934905 (2015).
[Crossref]

M. Ghasemkhani, A. R. Albrecht, S. D. Melgaard, D. V. Seletskiy, J. G. Cederberg, and M. Sheik-Bahae, “Intra-cavity cryogenic optical refrigeration using high power vertical external-cavity surface-emitting lasers (VECSELs),” Opt. Express 22(13), 16232–16240 (2014).
[Crossref] [PubMed]

C. G. Wang, C. Y. Li, M. P. Hasselbeck, B. Imangholi, and M. Sheik-Bahae, “Precision, all-optical measurement of external quantum efficiency in semiconductors,” J. Appl. Phys. 109(9), 093108 (2011).
[Crossref]

Shou, Q.

J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
[Crossref]

Sirbu, A.

Smith, S. A.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]

Sparenberg, M.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Spinelli, L.

J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
[Crossref]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High power (>0.5-W CW) diode pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

Stolz, W.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Stothard, D. J. M.

Tavast, M.

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, and M. Guina, “High-efficiency 20 W yellow VECSEL,” Opt. Express 22(6), 6372–6380 (2014).
[Crossref] [PubMed]

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Tropper, A. C.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

Valentine, G. J.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]

Van Lieu, N.

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Wang, C. G.

C. G. Wang, C. Y. Li, M. P. Hasselbeck, B. Imangholi, and M. Sheik-Bahae, “Precision, all-optical measurement of external quantum efficiency in semiconductors,” J. Appl. Phys. 109(9), 093108 (2011).
[Crossref]

Wang, T.-L.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Weber, A.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

Weiss, E.

J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
[Crossref]

Yablonovitch, E.

E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, “Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates,” Appl. Phys. Lett. 56(24), 2419–2421 (1990).
[Crossref]

Yang, Z.

Z. Yang, A. R. Albrecht, J. G. Cederberg, and M. Sheik-Bahae, “DBR-free optically pumped semiconductor disk lasers,” Proc. SPIE 9349, 934905 (2015).
[Crossref]

Yasin, M.

M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[Crossref]

Zhou, H.

J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
[Crossref]

Appl. Phys. Lett. (3)

C. B. Roxlo, D. Bebelaar, and M. M. Salour, “Tunable cw bulk semiconductor platelet laser,” Appl. Phys. Lett. 38(7), 507–509 (1981).
[Crossref]

E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, “Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates,” Appl. Phys. Lett. 56(24), 2419–2421 (1990).
[Crossref]

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[Crossref]

Electron. Lett. (1)

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[Crossref]

IEEE J. Quantum Electron. (3)

W. J. Alford, G. J. Fetzer, R. J. Epstein, N. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

M. Yasin, A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[Crossref]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

M. Butkua, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 µm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[Crossref]

IEEE Photonics Technol. Lett. (2)

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).
[Crossref]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High power (>0.5-W CW) diode pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).
[Crossref]

J. Appl. Phys. (1)

C. G. Wang, C. Y. Li, M. P. Hasselbeck, B. Imangholi, and M. Sheik-Bahae, “Precision, all-optical measurement of external quantum efficiency in semiconductors,” J. Appl. Phys. 109(9), 093108 (2011).
[Crossref]

Opt. Express (5)

Opt. Lett. (1)

Proc. SPIE (2)

Z. Yang, A. R. Albrecht, J. G. Cederberg, and M. Sheik-Bahae, “DBR-free optically pumped semiconductor disk lasers,” Proc. SPIE 9349, 934905 (2015).
[Crossref]

J. L. A. Chilla, H. Zhou, E. Weiss, A. L. Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41–47 (2005).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1 (a) Sample design and (b) schematic diagram of the transmission SDL geometry.
Fig. 2
Fig. 2 Laser characterization. (a) Power conversion graph for the transmission geometry with a linear fit, showing a slope efficiency of 11% (CW). Inset is the beam profile characterized with a silicon CCD camera at 5 W pump power, showing horizontal and vertical profiles with overlaid Gaussian fits. (b) DBR-free SDL wavelength tuning at 10.5 W incident pump power with two HRs. The spectra were collected with a 0.2 nm resolution optical spectrum analyzer.
Fig. 3
Fig. 3 Schematic diagrams of pulsed TIR based SDL setup (a) and proposed monolithic ring cavity (b) and (c).
Fig. 4
Fig. 4 Power conversion graph for TIR geometry. The inset are spectra below and above threshold.
Fig. 5
Fig. 5 Maximum temperature raise for different geometries as a function of incident pump power with constant pump density (80 kW/cm2). The absorption coefficient for the pump at the gain region is 1000 mm−1 and pump at DBR region is 457 mm−1. For the simulation diagrams, the red lines denote where the fixed temperature boundary conditions are applied.

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