Abstract

Light emission characteristics of ultraviolet (UV) BxAlyGa1−xyN/AlN quantum well (QW) structures were using the multiband effective-mass theory. The TE-polarized spontaneous emission is found to be significantly improved owing to the decrease in the lattice-mismatch between the well and the substrate with the inclusion of boron. However, the spontaneous emission peak begins to decrease when the boron composition exceeds a critical value (x = 0.08 for y = 0.2), which is mainly due to an increase in the heavy-hole effective mass. In addition, in the case of QW structures with higher Al composition (y > 0.5), the light emission is shown to decrease with increasing the boron composition because the characteristic of the topmost valence subband is changed to the crystal-field splitoff hole band. Hence, we expect that BxAlyGa1−xyN/AlN QW structures with y < 0.5 can be used as a TE-polarized light source with a high efficiency.

© 2015 Optical Society of America

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References

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  1. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
    [Crossref]
  2. H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep- ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
    [Crossref]
  3. T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1−xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
    [Crossref]
  4. S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett. 102(22), 221109 (2013).
    [Crossref]
  5. M. Hou, Z. Qin, C. He, J. Cai, X. Wang, and B. Shen, “Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes,” Opt. Express 22(16), 19589 (2014).
    [Crossref] [PubMed]
  6. Y.-H. Lu, Y.-K. Fu, S.-J. Huang, Y.-K. Su, K. L. Wang, M. H. Pilkuhn, and M.- Tao Chu, “Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes,” J. Appl. Phys. 115(11), 113102 (2014).
    [Crossref]
  7. A. Atsushi Yamaguchi, “Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations,” Appl. Phys. Lett. 96(15), 151911 (2010).
    [Crossref]
  8. J. E. Northrup, C. L. Chu, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
    [Crossref]
  9. T. Takano, M. Kurimoto, J. Yamamoto, and H. Kawanishi, “Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6HSiC substrate by LP-MOVPE for deep-UV emission,” J. Cryst. Growth 237, 972–977 (2002).
    [Crossref]
  10. S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
    [Crossref]
  11. M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
    [Crossref]
  12. X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030
  13. T. Honda, M. Tsubamoto, Y. Kuga, and H. Kawanishi, “Optical Gain in BGaN Lattice-Matched to (0001) 6H-SiC,” Mater. Res. Soc. Symp. Proc. 482, 1125–1129 (1997).
    [Crossref]
  14. S. L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995), Chap. 4.
  15. S.-H. Park and S. L. Chuang, “Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers,” Appl. Phys. Lett. 72, 3103–3105 (1998).
    [Crossref]
  16. D. Ahn, “Theory of non-Markovian optical gain in quantum-well lasers,” Prog. Quantum Electron. 21, 249–287 (1997).
    [Crossref]
  17. S.-H. Park, S. L. Chuang, J. Minch, and D. Ahn, “Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment,” Semicond. Sci. Technol. 15, 203–208 (2000).
    [Crossref]
  18. K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
    [Crossref]
  19. O. Madelung, Semiconductors: Basic Data,2nd revised ed. (Springer, Berlin1996).
  20. S.-H. Park, “Optical gain characteristics of non-polar Al-rich AlGaN/AlN quantum well structures,” J. Appl. Phys. 110, 063105 (2011).
    [Crossref]
  21. S.-H. Park, Y.-T. Moon, D.-S. Han, J. S. Park, M.-S. Oh, and D. Ahn, “Light emission enhancement in blue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett. 99, 181101 (2011).
    [Crossref]

2014 (2)

M. Hou, Z. Qin, C. He, J. Cai, X. Wang, and B. Shen, “Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes,” Opt. Express 22(16), 19589 (2014).
[Crossref] [PubMed]

Y.-H. Lu, Y.-K. Fu, S.-J. Huang, Y.-K. Su, K. L. Wang, M. H. Pilkuhn, and M.- Tao Chu, “Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes,” J. Appl. Phys. 115(11), 113102 (2014).
[Crossref]

2013 (1)

S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett. 102(22), 221109 (2013).
[Crossref]

2012 (2)

J. E. Northrup, C. L. Chu, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1−xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[Crossref]

2011 (3)

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
[Crossref]

S.-H. Park, “Optical gain characteristics of non-polar Al-rich AlGaN/AlN quantum well structures,” J. Appl. Phys. 110, 063105 (2011).
[Crossref]

S.-H. Park, Y.-T. Moon, D.-S. Han, J. S. Park, M.-S. Oh, and D. Ahn, “Light emission enhancement in blue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett. 99, 181101 (2011).
[Crossref]

2010 (3)

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep- ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

A. Atsushi Yamaguchi, “Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations,” Appl. Phys. Lett. 96(15), 151911 (2010).
[Crossref]

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

2002 (1)

T. Takano, M. Kurimoto, J. Yamamoto, and H. Kawanishi, “Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6HSiC substrate by LP-MOVPE for deep-UV emission,” J. Cryst. Growth 237, 972–977 (2002).
[Crossref]

2000 (1)

S.-H. Park, S. L. Chuang, J. Minch, and D. Ahn, “Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment,” Semicond. Sci. Technol. 15, 203–208 (2000).
[Crossref]

1998 (2)

K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
[Crossref]

S.-H. Park and S. L. Chuang, “Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers,” Appl. Phys. Lett. 72, 3103–3105 (1998).
[Crossref]

1997 (2)

D. Ahn, “Theory of non-Markovian optical gain in quantum-well lasers,” Prog. Quantum Electron. 21, 249–287 (1997).
[Crossref]

T. Honda, M. Tsubamoto, Y. Kuga, and H. Kawanishi, “Optical Gain in BGaN Lattice-Matched to (0001) 6H-SiC,” Mater. Res. Soc. Symp. Proc. 482, 1125–1129 (1997).
[Crossref]

Abid, M.

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
[Crossref]

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Ahn, D.

S.-H. Park, Y.-T. Moon, D.-S. Han, J. S. Park, M.-S. Oh, and D. Ahn, “Light emission enhancement in blue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett. 99, 181101 (2011).
[Crossref]

S.-H. Park, S. L. Chuang, J. Minch, and D. Ahn, “Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment,” Semicond. Sci. Technol. 15, 203–208 (2000).
[Crossref]

D. Ahn, “Theory of non-Markovian optical gain in quantum-well lasers,” Prog. Quantum Electron. 21, 249–287 (1997).
[Crossref]

Alnot, M.

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Altahtamouni, T. M.

T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1−xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[Crossref]

Atsushi Yamaguchi, A.

A. Atsushi Yamaguchi, “Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations,” Appl. Phys. Lett. 96(15), 151911 (2010).
[Crossref]

Bouchoule, S.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Cai, J.

Chu, C. L.

J. E. Northrup, C. L. Chu, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

Chuang, S. L.

S.-H. Park, S. L. Chuang, J. Minch, and D. Ahn, “Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment,” Semicond. Sci. Technol. 15, 203–208 (2000).
[Crossref]

S.-H. Park and S. L. Chuang, “Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers,” Appl. Phys. Lett. 72, 3103–3105 (1998).
[Crossref]

S. L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995), Chap. 4.

Disseix, P.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Djebbour, Z.

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
[Crossref]

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Dupuis, R. D.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

ElGmili, Y.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

En Naciri, A.

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
[Crossref]

Fasol, G.

S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
[Crossref]

Ferguson, I. T.

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Fu, Y.-K.

Y.-H. Lu, Y.-K. Fu, S.-J. Huang, Y.-K. Su, K. L. Wang, M. H. Pilkuhn, and M.- Tao Chu, “Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes,” J. Appl. Phys. 115(11), 113102 (2014).
[Crossref]

Gautier, S.

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
[Crossref]

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Genty, F.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Han, D.-S.

S.-H. Park, Y.-T. Moon, D.-S. Han, J. S. Park, M.-S. Oh, and D. Ahn, “Light emission enhancement in blue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett. 99, 181101 (2011).
[Crossref]

He, C.

Hirayama, H.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep- ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Honda, T.

T. Honda, M. Tsubamoto, Y. Kuga, and H. Kawanishi, “Optical Gain in BGaN Lattice-Matched to (0001) 6H-SiC,” Mater. Res. Soc. Symp. Proc. 482, 1125–1129 (1997).
[Crossref]

Hou, M.

Huang, S.-J.

Y.-H. Lu, Y.-K. Fu, S.-J. Huang, Y.-K. Su, K. L. Wang, M. H. Pilkuhn, and M.- Tao Chu, “Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes,” J. Appl. Phys. 115(11), 113102 (2014).
[Crossref]

Jiang, H. X.

T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1−xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[Crossref]

Johnson, N. M.

J. E. Northrup, C. L. Chu, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

Jomard, F.

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Kamata, N.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep- ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Kawanishi, H.

T. Takano, M. Kurimoto, J. Yamamoto, and H. Kawanishi, “Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6HSiC substrate by LP-MOVPE for deep-UV emission,” J. Cryst. Growth 237, 972–977 (2002).
[Crossref]

T. Honda, M. Tsubamoto, Y. Kuga, and H. Kawanishi, “Optical Gain in BGaN Lattice-Matched to (0001) 6H-SiC,” Mater. Res. Soc. Symp. Proc. 482, 1125–1129 (1997).
[Crossref]

Kneissl, M.

J. E. Northrup, C. L. Chu, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

Kolbe, T.

J. E. Northrup, C. L. Chu, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

Kuga, Y.

T. Honda, M. Tsubamoto, Y. Kuga, and H. Kawanishi, “Optical Gain in BGaN Lattice-Matched to (0001) 6H-SiC,” Mater. Res. Soc. Symp. Proc. 482, 1125–1129 (1997).
[Crossref]

Kurimoto, M.

T. Takano, M. Kurimoto, J. Yamamoto, and H. Kawanishi, “Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6HSiC substrate by LP-MOVPE for deep-UV emission,” J. Cryst. Growth 237, 972–977 (2002).
[Crossref]

Leymarie, J.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Li, X.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Lin, J. Y.

T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1−xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[Crossref]

Lu, Y.-H.

Y.-H. Lu, Y.-K. Fu, S.-J. Huang, Y.-K. Su, K. L. Wang, M. H. Pilkuhn, and M.- Tao Chu, “Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes,” J. Appl. Phys. 115(11), 113102 (2014).
[Crossref]

Madelung, O.

O. Madelung, Semiconductors: Basic Data,2nd revised ed. (Springer, Berlin1996).

Maeda, T.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep- ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Maloufi, N.

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Migan-Dubois, A.

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
[Crossref]

Minch, J.

S.-H. Park, S. L. Chuang, J. Minch, and D. Ahn, “Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment,” Semicond. Sci. Technol. 15, 203–208 (2000).
[Crossref]

Moon, Y.-T.

S.-H. Park, Y.-T. Moon, D.-S. Han, J. S. Park, M.-S. Oh, and D. Ahn, “Light emission enhancement in blue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett. 99, 181101 (2011).
[Crossref]

Moudakir, T.

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
[Crossref]

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Nakamura, S.

S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
[Crossref]

Northrup, J. E.

J. E. Northrup, C. L. Chu, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

Oh, M.-S.

S.-H. Park, Y.-T. Moon, D.-S. Han, J. S. Park, M.-S. Oh, and D. Ahn, “Light emission enhancement in blue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett. 99, 181101 (2011).
[Crossref]

Orsal, G.

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
[Crossref]

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Ougazzaden, A.

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
[Crossref]

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Pantzas, K.

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Park, J. S.

S.-H. Park, Y.-T. Moon, D.-S. Han, J. S. Park, M.-S. Oh, and D. Ahn, “Light emission enhancement in blue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett. 99, 181101 (2011).
[Crossref]

Park, S.-H.

S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett. 102(22), 221109 (2013).
[Crossref]

S.-H. Park, “Optical gain characteristics of non-polar Al-rich AlGaN/AlN quantum well structures,” J. Appl. Phys. 110, 063105 (2011).
[Crossref]

S.-H. Park, Y.-T. Moon, D.-S. Han, J. S. Park, M.-S. Oh, and D. Ahn, “Light emission enhancement in blue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett. 99, 181101 (2011).
[Crossref]

S.-H. Park, S. L. Chuang, J. Minch, and D. Ahn, “Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment,” Semicond. Sci. Technol. 15, 203–208 (2000).
[Crossref]

S.-H. Park and S. L. Chuang, “Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers,” Appl. Phys. Lett. 72, 3103–3105 (1998).
[Crossref]

Patriache, G.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Pilkuhn, M. H.

Y.-H. Lu, Y.-K. Fu, S.-J. Huang, Y.-K. Su, K. L. Wang, M. H. Pilkuhn, and M.- Tao Chu, “Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes,” J. Appl. Phys. 115(11), 113102 (2014).
[Crossref]

Qin, Z.

Rveret, F.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Salvestrini, J.-P.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Shen, B.

Shim, J.-I.

S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett. 102(22), 221109 (2013).
[Crossref]

Shimada, K.

K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
[Crossref]

Sirenko, A. A.

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Sota, T.

K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
[Crossref]

Su, Y.-K.

Y.-H. Lu, Y.-K. Fu, S.-J. Huang, Y.-K. Su, K. L. Wang, M. H. Pilkuhn, and M.- Tao Chu, “Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes,” J. Appl. Phys. 115(11), 113102 (2014).
[Crossref]

Sundaram, S.

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Suzuki, K.

K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
[Crossref]

Takano, T.

T. Takano, M. Kurimoto, J. Yamamoto, and H. Kawanishi, “Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6HSiC substrate by LP-MOVPE for deep-UV emission,” J. Cryst. Growth 237, 972–977 (2002).
[Crossref]

Tao Chu, M.-

Y.-H. Lu, Y.-K. Fu, S.-J. Huang, Y.-K. Su, K. L. Wang, M. H. Pilkuhn, and M.- Tao Chu, “Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes,” J. Appl. Phys. 115(11), 113102 (2014).
[Crossref]

Tsubamoto, M.

T. Honda, M. Tsubamoto, Y. Kuga, and H. Kawanishi, “Optical Gain in BGaN Lattice-Matched to (0001) 6H-SiC,” Mater. Res. Soc. Symp. Proc. 482, 1125–1129 (1997).
[Crossref]

Tsukada, Y.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep- ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Voss, P. L.

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

Wang, K. L.

Y.-H. Lu, Y.-K. Fu, S.-J. Huang, Y.-K. Su, K. L. Wang, M. H. Pilkuhn, and M.- Tao Chu, “Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes,” J. Appl. Phys. 115(11), 113102 (2014).
[Crossref]

Wang, X.

Wunderer, T.

J. E. Northrup, C. L. Chu, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

Yamamoto, J.

T. Takano, M. Kurimoto, J. Yamamoto, and H. Kawanishi, “Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6HSiC substrate by LP-MOVPE for deep-UV emission,” J. Cryst. Growth 237, 972–977 (2002).
[Crossref]

Yang, Z.

J. E. Northrup, C. L. Chu, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

Appl. Phys. Express (1)

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep- ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Appl. Phys. Lett. (6)

T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1−xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[Crossref]

S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett. 102(22), 221109 (2013).
[Crossref]

A. Atsushi Yamaguchi, “Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations,” Appl. Phys. Lett. 96(15), 151911 (2010).
[Crossref]

J. E. Northrup, C. L. Chu, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

S.-H. Park and S. L. Chuang, “Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers,” Appl. Phys. Lett. 72, 3103–3105 (1998).
[Crossref]

S.-H. Park, Y.-T. Moon, D.-S. Han, J. S. Park, M.-S. Oh, and D. Ahn, “Light emission enhancement in blue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett. 99, 181101 (2011).
[Crossref]

J. Appl. Phys. (3)

K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
[Crossref]

S.-H. Park, “Optical gain characteristics of non-polar Al-rich AlGaN/AlN quantum well structures,” J. Appl. Phys. 110, 063105 (2011).
[Crossref]

Y.-H. Lu, Y.-K. Fu, S.-J. Huang, Y.-K. Su, K. L. Wang, M. H. Pilkuhn, and M.- Tao Chu, “Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes,” J. Appl. Phys. 115(11), 113102 (2014).
[Crossref]

J. Cryst. Growth (3)

T. Takano, M. Kurimoto, J. Yamamoto, and H. Kawanishi, “Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6HSiC substrate by LP-MOVPE for deep-UV emission,” J. Cryst. Growth 237, 972–977 (2002).
[Crossref]

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, and A. Ougazzaden, “Blueviolet boron-based Distributed Bragg Reflectors for VCSEL application,” J. Cryst. Growth 315(1), 283–287 (2011).
[Crossref]

Mater. Res. Soc. Symp. Proc. (1)

T. Honda, M. Tsubamoto, Y. Kuga, and H. Kawanishi, “Optical Gain in BGaN Lattice-Matched to (0001) 6H-SiC,” Mater. Res. Soc. Symp. Proc. 482, 1125–1129 (1997).
[Crossref]

Opt. Express (1)

Prog. Quantum Electron. (1)

D. Ahn, “Theory of non-Markovian optical gain in quantum-well lasers,” Prog. Quantum Electron. 21, 249–287 (1997).
[Crossref]

Semicond. Sci. Technol. (1)

S.-H. Park, S. L. Chuang, J. Minch, and D. Ahn, “Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment,” Semicond. Sci. Technol. 15, 203–208 (2000).
[Crossref]

Other (4)

S. L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995), Chap. 4.

S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
[Crossref]

O. Madelung, Semiconductors: Basic Data,2nd revised ed. (Springer, Berlin1996).

X. Li, S. Sundaram, Y. ElGmili, F. Genty, S. Bouchoule, G. Patriache, P. Disseix, F. Rveret, J. Leymarie, J.-P. Salvestrini, R. D. Dupuis, P. L. Voss, and A. Ougazzaden, “MOVPE grown periodic AlN/BAlN heterostructure with high boron content,” J. Cryst. Growth (2014), http://dx.doi.org/10.1016/j.jcrysgro.2014.09.030

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Figures (4)

Fig. 1
Fig. 1 Valence band structures for BxAlyGa1−xyN/AlN QW structures (y=0.2, Lw=2.5 nm) with x=0.0, 0.06, and 0.12. The SC solutions are obtained at a sheet carrier density of N2D = 20 × 1012cm−2.
Fig. 2
Fig. 2 (a) Optical matrix element and (b) strain and internal field in the well as a function of the boron composition for BxAlyGa1−xyN/AlN QW structures (y=0.2, Lw=2.5 nm).
Fig. 3
Fig. 3 (a) Spontaneous emission coefficients for BxAlyGa1−xyN/AlN QW structures (y=0.2) with several x values and (b) peak intensities as a function of the boron composition for BxAlyGa1−xyN/AlN QW structures with several y values.
Fig. 4
Fig. 4 Potential profile and the wave functions (C1 and HH1) at zone center for cases with (a) x=0.0, (b) 0.06, and (c) 0.12 and (d) quasi-Fermi level separation as a function of the boron composition for BxAlyGa1−xyN/AlN QW structures (Lw=2.5 nm).

Tables (1)

Tables Icon

Table 1 Physical parameters for BN material used in the calculation.

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