Abstract

We report a possible way to extend the emission wavelength of InyGa1-yN/InxGa1-xN quantum-well (QW) light-emitting diodes (LEDs) to the yellow-red spectral range with little degradation of the radiative efficiency. The InyGa1-yN well with high indium (In) content (HI-InyGa1-yN) was realized by periodic Ga-flow interruption (Ga-FI). The In contents of the HI-InyGa1-yN well and the InxGa1-xN barrier were changed to manipulate the emission wavelength of the LEDs. An In0.34Ga0.66N/In0.1Ga0.9N-QW LED, grown by continuous growth mode (C-LED), was prepared as a reference. The photoluminescence (PL) wavelengths of the HI-InyGa1-yN/InxGa1-xN QW LEDs were changed from 556 to 597 nm. The PL intensity of the HI-InyGa1-yN/InxGa1-xN LED with a peak wavelength of 563 nm was 2.7 times stronger than that of the C-LED (λ = 565 nm). The luminescence intensity for the HI-InyGa1-yN/InxGa1-xN QW LED emitting at 597 nm was stronger than those of the other LED samples with shorter wavelengths. Considering the previous works on degradation in crystal quality and increase in the quantum-confined Stark effect with increasing In content in InGaN, the approach in this work is very promising for yellow-red InGaN LEDs.

© 2017 Optical Society of America

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References

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    [Crossref]
  3. C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90(15), 151122 (2007).
    [Crossref]
  4. S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
    [Crossref]
  5. H. S. Chen, C. F. Lu, D. M. Yeh, C. F. Huang, J. J. Huang, and C. C. Yang, “Orange–red light-emitting diodes based on a prestrained InGaN–GaN quantum-well epitaxy structure,” IEEE Photonics Technol. Lett. 18(21), 2269–2271 (2006).
    [Crossref]
  6. A. Yamamoto, K. Sugita, and A. Hashimoto, “Elucidation of factors obstructing quality improvement of MOVPE-grown InN,” J. Cryst. Growth 311(22), 4636–4640 (2009).
    [Crossref]
  7. D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  16. C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  20. Z. Lin, H. Wang, W. Wang, Y. Lin, M. Yang, S. Chen, and G. Li, “Employing low-temperature barriers to achieve strain-relaxed and high-performance GaN-based LEDs,” Opt. Express 24(11), 11885–11896 (2016).
    [Crossref] [PubMed]
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    [Crossref]
  22. Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
    [Crossref]
  23. M. V. Klymenko, O. Shulika, and I. A. Sukhoivanov, “Theoretical study of optical transition matrix elements in InGaN/GaN SQW subject to indium surface segregation,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1374–1380 (2011).
    [Crossref]
  24. H. Y. Liu, X. D. Wang, B. Xu, D. Ding, W. H. Jiang, J. Wu, and Z. G. Wang, “Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots,” J. Cryst. Growth 213(1–2), 193–197 (2000).
    [Crossref]
  25. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
    [Crossref]
  26. E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–979 (2002).
    [Crossref]
  27. T. Mukai, M. Yamada, and S. Nakamura, “Characteristics of InGaN-based uv/blue/green/amber/red light-emitting diodes,” Jpn. J. Appl. Phys. 38(7), 3976–3981 (1999).
    [Crossref]
  28. T. H. Ngo, B. Gil, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency and auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction,” Superlattices Microstruct. 103, 245–251 (2017).
    [Crossref]

2017 (1)

T. H. Ngo, B. Gil, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency and auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction,” Superlattices Microstruct. 103, 245–251 (2017).
[Crossref]

2016 (1)

2015 (3)

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong carrier localization effect in carrier dynamics of 585nm InGaN amber light-emitting diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

B. Damilano and B. Gil, “Yellow-red emission from (Ga,In)N heterostructures,” J. Phys. D Appl. Phys. 48(40), 403111 (2015).
[Crossref]

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

2013 (2)

K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Y. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov, and A. A. Toropov, “Phase separation in InxGa1‐xN (0.10< x< 0.40),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(3), 527–531 (2013).
[Crossref]

S. Jahangir, M. Mandl, M. Strassburg, and P. Bhattacharya, “Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon,” Appl. Phys. Lett. 102(7), 071101 (2013).
[Crossref]

2011 (2)

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

M. V. Klymenko, O. Shulika, and I. A. Sukhoivanov, “Theoretical study of optical transition matrix elements in InGaN/GaN SQW subject to indium surface segregation,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1374–1380 (2011).
[Crossref]

2010 (3)

L. Zhang, K. Cheng, S. Degroote, M. Leys, M. Germain, and G. Borghs, “Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy,” J. Appl. Phys. 108(7), 073522 (2010).
[Crossref]

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010).
[Crossref]

2009 (2)

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

A. Yamamoto, K. Sugita, and A. Hashimoto, “Elucidation of factors obstructing quality improvement of MOVPE-grown InN,” J. Cryst. Growth 311(22), 4636–4640 (2009).
[Crossref]

2008 (1)

H. C. Lin, R. S. Lin, and J. I. Chyi, “Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment,” Appl. Phys. Lett. 92(16), 161113 (2008).
[Crossref]

2007 (1)

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90(15), 151122 (2007).
[Crossref]

2006 (2)

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

H. S. Chen, C. F. Lu, D. M. Yeh, C. F. Huang, J. J. Huang, and C. C. Yang, “Orange–red light-emitting diodes based on a prestrained InGaN–GaN quantum-well epitaxy structure,” IEEE Photonics Technol. Lett. 18(21), 2269–2271 (2006).
[Crossref]

2003 (1)

C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
[Crossref]

2002 (4)

R. W. Martin, P. R. Edwards, R. Pecharroman-Gallego, C. Liu, C. J. Deatcher, I. M. Watson, and K. P. O’Donnell, “Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells,” J. Phys. D Appl. Phys. 35(7), 604–608 (2002).
[Crossref]

H. K. Cho, J. Y. Lee, C. S. Kim, and G. M. Yang, “Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1166–1170 (2002).
[Crossref]

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–979 (2002).
[Crossref]

2001 (2)

M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, “Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 90(11), 5642–5646 (2001).
[Crossref]

S. J. Leem, M. H. Kim, J. Shin, Y. Choi, and J. Jeong, “The effects of In flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 40(2), L371–L373 (2001).
[Crossref]

2000 (2)

H. Y. Liu, X. D. Wang, B. Xu, D. Ding, W. H. Jiang, J. Wu, and Z. G. Wang, “Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots,” J. Cryst. Growth 213(1–2), 193–197 (2000).
[Crossref]

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

1999 (1)

T. Mukai, M. Yamada, and S. Nakamura, “Characteristics of InGaN-based uv/blue/green/amber/red light-emitting diodes,” Jpn. J. Appl. Phys. 38(7), 3976–3981 (1999).
[Crossref]

Akasaki, I.

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

Amano, H.

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

Bandoh, A.

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

Belyaev, K. G.

K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Y. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov, and A. A. Toropov, “Phase separation in InxGa1‐xN (0.10< x< 0.40),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(3), 527–531 (2013).
[Crossref]

Bhattacharya, P.

S. Jahangir, M. Mandl, M. Strassburg, and P. Bhattacharya, “Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon,” Appl. Phys. Lett. 102(7), 071101 (2013).
[Crossref]

Borghs, G.

L. Zhang, K. Cheng, S. Degroote, M. Leys, M. Germain, and G. Borghs, “Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy,” J. Appl. Phys. 108(7), 073522 (2010).
[Crossref]

Brandt, O.

C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
[Crossref]

Bremers, H.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Chang, S. J.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Chen, C. H.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Chen, H. S.

H. S. Chen, C. F. Lu, D. M. Yeh, C. F. Huang, J. J. Huang, and C. C. Yang, “Orange–red light-emitting diodes based on a prestrained InGaN–GaN quantum-well epitaxy structure,” IEEE Photonics Technol. Lett. 18(21), 2269–2271 (2006).
[Crossref]

Chen, J. F.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Chen, S.

Cheng, K.

L. Zhang, K. Cheng, S. Degroote, M. Leys, M. Germain, and G. Borghs, “Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy,” J. Appl. Phys. 108(7), 073522 (2010).
[Crossref]

Cheng, Y. C.

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

Cheong, M. G.

M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, “Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 90(11), 5642–5646 (2001).
[Crossref]

Cho, H. K.

H. K. Cho, J. Y. Lee, C. S. Kim, and G. M. Yang, “Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1166–1170 (2002).
[Crossref]

Choi, R. J.

M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, “Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 90(11), 5642–5646 (2001).
[Crossref]

Choi, Y.

S. J. Leem, M. H. Kim, J. Shin, Y. Choi, and J. Jeong, “The effects of In flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 40(2), L371–L373 (2001).
[Crossref]

Chou, C. C.

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

Chyi, J. I.

H. C. Lin, R. S. Lin, and J. I. Chyi, “Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment,” Appl. Phys. Lett. 92(16), 161113 (2008).
[Crossref]

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

Crawford, M. H.

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

Cullis, A. G.

C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
[Crossref]

Damilano, B.

T. H. Ngo, B. Gil, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency and auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction,” Superlattices Microstruct. 103, 245–251 (2017).
[Crossref]

B. Damilano and B. Gil, “Yellow-red emission from (Ga,In)N heterostructures,” J. Phys. D Appl. Phys. 48(40), 403111 (2015).
[Crossref]

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

Deatcher, C. J.

C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
[Crossref]

R. W. Martin, P. R. Edwards, R. Pecharroman-Gallego, C. Liu, C. J. Deatcher, I. M. Watson, and K. P. O’Donnell, “Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells,” J. Phys. D Appl. Phys. 35(7), 604–608 (2002).
[Crossref]

Degroote, S.

L. Zhang, K. Cheng, S. Degroote, M. Leys, M. Germain, and G. Borghs, “Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy,” J. Appl. Phys. 108(7), 073522 (2010).
[Crossref]

Ding, D.

H. Y. Liu, X. D. Wang, B. Xu, D. Ding, W. H. Jiang, J. Wu, and Z. G. Wang, “Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots,” J. Cryst. Growth 213(1–2), 193–197 (2000).
[Crossref]

Edwards, P. R.

R. W. Martin, P. R. Edwards, R. Pecharroman-Gallego, C. Liu, C. J. Deatcher, I. M. Watson, and K. P. O’Donnell, “Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells,” J. Phys. D Appl. Phys. 35(7), 604–608 (2002).
[Crossref]

Feng, S. W.

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

Gaska, R.

E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–979 (2002).
[Crossref]

Germain, M.

L. Zhang, K. Cheng, S. Degroote, M. Leys, M. Germain, and G. Borghs, “Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy,” J. Appl. Phys. 108(7), 073522 (2010).
[Crossref]

Gil, B.

T. H. Ngo, B. Gil, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency and auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction,” Superlattices Microstruct. 103, 245–251 (2017).
[Crossref]

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

B. Damilano and B. Gil, “Yellow-red emission from (Ga,In)N heterostructures,” J. Phys. D Appl. Phys. 48(40), 403111 (2015).
[Crossref]

Hangleiter, A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Hashimoto, A.

A. Yamamoto, K. Sugita, and A. Hashimoto, “Elucidation of factors obstructing quality improvement of MOVPE-grown InN,” J. Cryst. Growth 311(22), 4636–4640 (2009).
[Crossref]

Hoffmann, L.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Hong, C. H.

M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, “Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 90(11), 5642–5646 (2001).
[Crossref]

Hsu, C.

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

Huang, C. F.

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90(15), 151122 (2007).
[Crossref]

H. S. Chen, C. F. Lu, D. M. Yeh, C. F. Huang, J. J. Huang, and C. C. Yang, “Orange–red light-emitting diodes based on a prestrained InGaN–GaN quantum-well epitaxy structure,” IEEE Photonics Technol. Lett. 18(21), 2269–2271 (2006).
[Crossref]

Huang, J. J.

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90(15), 151122 (2007).
[Crossref]

H. S. Chen, C. F. Lu, D. M. Yeh, C. F. Huang, J. J. Huang, and C. C. Yang, “Orange–red light-emitting diodes based on a prestrained InGaN–GaN quantum-well epitaxy structure,” IEEE Photonics Technol. Lett. 18(21), 2269–2271 (2006).
[Crossref]

Iida, D.

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

Ivanov, S. V.

K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Y. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov, and A. A. Toropov, “Phase separation in InxGa1‐xN (0.10< x< 0.40),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(3), 527–531 (2013).
[Crossref]

Iwaya, M.

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

Jahangir, S.

S. Jahangir, M. Mandl, M. Strassburg, and P. Bhattacharya, “Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon,” Appl. Phys. Lett. 102(7), 071101 (2013).
[Crossref]

Jeong, J.

S. J. Leem, M. H. Kim, J. Shin, Y. Choi, and J. Jeong, “The effects of In flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 40(2), L371–L373 (2001).
[Crossref]

Jiang, W. H.

H. Y. Liu, X. D. Wang, B. Xu, D. Ding, W. H. Jiang, J. Wu, and Z. G. Wang, “Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots,” J. Cryst. Growth 213(1–2), 193–197 (2000).
[Crossref]

Jmerik, V. N.

K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Y. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov, and A. A. Toropov, “Phase separation in InxGa1‐xN (0.10< x< 0.40),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(3), 527–531 (2013).
[Crossref]

Jönen, H.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Kamiyama, S.

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

Kang, J.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong carrier localization effect in carrier dynamics of 585nm InGaN amber light-emitting diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

Ketzer, F. A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Khan, M. A.

E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–979 (2002).
[Crossref]

Kikuchi, A.

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010).
[Crossref]

Kim, C. S.

H. K. Cho, J. Y. Lee, C. S. Kim, and G. M. Yang, “Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1166–1170 (2002).
[Crossref]

M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, “Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 90(11), 5642–5646 (2001).
[Crossref]

Kim, H. J.

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

Kim, M. H.

S. J. Leem, M. H. Kim, J. Shin, Y. Choi, and J. Jeong, “The effects of In flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 40(2), L371–L373 (2001).
[Crossref]

Kim, Y. W.

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

Kishino, K.

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010).
[Crossref]

Klymenko, M. V.

M. V. Klymenko, O. Shulika, and I. A. Sukhoivanov, “Theoretical study of optical transition matrix elements in InGaN/GaN SQW subject to indium surface segregation,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1374–1380 (2011).
[Crossref]

Kruse, A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Kuo, C. H.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Kuokstis, E.

E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–979 (2002).
[Crossref]

Kuznetsova, Y. V.

K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Y. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov, and A. A. Toropov, “Phase separation in InxGa1‐xN (0.10< x< 0.40),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(3), 527–531 (2013).
[Crossref]

Kwon, S. Y.

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

Lada, M.

C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
[Crossref]

Lai, W. C.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Langer, T.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Lee, C. M.

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

Lee, H. J.

M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, “Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 90(11), 5642–5646 (2001).
[Crossref]

Lee, J. Y.

H. K. Cho, J. Y. Lee, C. S. Kim, and G. M. Yang, “Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1166–1170 (2002).
[Crossref]

Leem, S. J.

S. J. Leem, M. H. Kim, J. Shin, Y. Choi, and J. Jeong, “The effects of In flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 40(2), L371–L373 (2001).
[Crossref]

Lekhal, K.

T. H. Ngo, B. Gil, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency and auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction,” Superlattices Microstruct. 103, 245–251 (2017).
[Crossref]

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

Leys, M.

L. Zhang, K. Cheng, S. Degroote, M. Leys, M. Germain, and G. Borghs, “Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy,” J. Appl. Phys. 108(7), 073522 (2010).
[Crossref]

Li, G.

Li, H.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong carrier localization effect in carrier dynamics of 585nm InGaN amber light-emitting diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

Li, J.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong carrier localization effect in carrier dynamics of 585nm InGaN amber light-emitting diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

Li, P.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong carrier localization effect in carrier dynamics of 585nm InGaN amber light-emitting diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

Li, Z.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong carrier localization effect in carrier dynamics of 585nm InGaN amber light-emitting diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

Liao, C. C.

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

Lin, H. C.

H. C. Lin, R. S. Lin, and J. I. Chyi, “Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment,” Appl. Phys. Lett. 92(16), 161113 (2008).
[Crossref]

Lin, R. S.

H. C. Lin, R. S. Lin, and J. I. Chyi, “Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment,” Appl. Phys. Lett. 92(16), 161113 (2008).
[Crossref]

Lin, Y.

Lin, Y. S.

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

Lin, Z.

Liu, C.

C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
[Crossref]

R. W. Martin, P. R. Edwards, R. Pecharroman-Gallego, C. Liu, C. J. Deatcher, I. M. Watson, and K. P. O’Donnell, “Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells,” J. Phys. D Appl. Phys. 35(7), 604–608 (2002).
[Crossref]

Liu, H. Y.

H. Y. Liu, X. D. Wang, B. Xu, D. Ding, W. H. Jiang, J. Wu, and Z. G. Wang, “Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots,” J. Cryst. Growth 213(1–2), 193–197 (2000).
[Crossref]

Lu, C. F.

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90(15), 151122 (2007).
[Crossref]

H. S. Chen, C. F. Lu, D. M. Yeh, C. F. Huang, J. J. Huang, and C. C. Yang, “Orange–red light-emitting diodes based on a prestrained InGaN–GaN quantum-well epitaxy structure,” IEEE Photonics Technol. Lett. 18(21), 2269–2271 (2006).
[Crossref]

Ma, K. J.

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

Makino, T.

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

Mandl, M.

S. Jahangir, M. Mandl, M. Strassburg, and P. Bhattacharya, “Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon,” Appl. Phys. Lett. 102(7), 071101 (2013).
[Crossref]

Martin, R. W.

R. W. Martin, P. R. Edwards, R. Pecharroman-Gallego, C. Liu, C. J. Deatcher, I. M. Watson, and K. P. O’Donnell, “Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells,” J. Phys. D Appl. Phys. 35(7), 604–608 (2002).
[Crossref]

Mierry, P. D.

T. H. Ngo, B. Gil, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency and auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction,” Superlattices Microstruct. 103, 245–251 (2017).
[Crossref]

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

Mizerov, A. M.

K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Y. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov, and A. A. Toropov, “Phase separation in InxGa1‐xN (0.10< x< 0.40),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(3), 527–531 (2013).
[Crossref]

Mukai, T.

T. Mukai, M. Yamada, and S. Nakamura, “Characteristics of InGaN-based uv/blue/green/amber/red light-emitting diodes,” Jpn. J. Appl. Phys. 38(7), 3976–3981 (1999).
[Crossref]

Na, H.

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

Nagata, K.

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

Nakamura, S.

T. Mukai, M. Yamada, and S. Nakamura, “Characteristics of InGaN-based uv/blue/green/amber/red light-emitting diodes,” Jpn. J. Appl. Phys. 38(7), 3976–3981 (1999).
[Crossref]

Ngo, T. H.

T. H. Ngo, B. Gil, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency and auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction,” Superlattices Microstruct. 103, 245–251 (2017).
[Crossref]

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

O’Donnell, K. P.

R. W. Martin, P. R. Edwards, R. Pecharroman-Gallego, C. Liu, C. J. Deatcher, I. M. Watson, and K. P. O’Donnell, “Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells,” J. Phys. D Appl. Phys. 35(7), 604–608 (2002).
[Crossref]

Park, Y. S.

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

Pecharroman-Gallego, R.

R. W. Martin, P. R. Edwards, R. Pecharroman-Gallego, C. Liu, C. J. Deatcher, I. M. Watson, and K. P. O’Donnell, “Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells,” J. Phys. D Appl. Phys. 35(7), 604–608 (2002).
[Crossref]

Pereira, S.

C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
[Crossref]

Rakhlin, M. V.

K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Y. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov, and A. A. Toropov, “Phase separation in InxGa1‐xN (0.10< x< 0.40),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(3), 527–531 (2013).
[Crossref]

Rossow, U.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Schwiegel, A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Sekiguchi, H.

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010).
[Crossref]

Seo, H. C.

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

Sheu, J. K.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Shin, J.

S. J. Leem, M. H. Kim, J. Shin, Y. Choi, and J. Jeong, “The effects of In flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 40(2), L371–L373 (2001).
[Crossref]

Shin, Y.

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

Shulika, O.

M. V. Klymenko, O. Shulika, and I. A. Sukhoivanov, “Theoretical study of optical transition matrix elements in InGaN/GaN SQW subject to indium surface segregation,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1374–1380 (2011).
[Crossref]

Shur, M. S.

E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–979 (2002).
[Crossref]

Simin, G.

E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–979 (2002).
[Crossref]

Strassburg, M.

S. Jahangir, M. Mandl, M. Strassburg, and P. Bhattacharya, “Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon,” Appl. Phys. Lett. 102(7), 071101 (2013).
[Crossref]

Su, Y. K.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Sugita, K.

A. Yamamoto, K. Sugita, and A. Hashimoto, “Elucidation of factors obstructing quality improvement of MOVPE-grown InN,” J. Cryst. Growth 311(22), 4636–4640 (2009).
[Crossref]

Suh, E. K.

M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, “Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 90(11), 5642–5646 (2001).
[Crossref]

Sukhoivanov, I. A.

M. V. Klymenko, O. Shulika, and I. A. Sukhoivanov, “Theoretical study of optical transition matrix elements in InGaN/GaN SQW subject to indium surface segregation,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1374–1380 (2011).
[Crossref]

Sun, Y. J.

C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
[Crossref]

Tang, T. Y.

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90(15), 151122 (2007).
[Crossref]

Toropov, A. A.

K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Y. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov, and A. A. Toropov, “Phase separation in InxGa1‐xN (0.10< x< 0.40),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(3), 527–531 (2013).
[Crossref]

Udagawa, T.

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

Valvin, P.

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

Wang, G.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong carrier localization effect in carrier dynamics of 585nm InGaN amber light-emitting diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

Wang, H.

Wang, W.

Wang, X. D.

H. Y. Liu, X. D. Wang, B. Xu, D. Ding, W. H. Jiang, J. Wu, and Z. G. Wang, “Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots,” J. Cryst. Growth 213(1–2), 193–197 (2000).
[Crossref]

Wang, Z. G.

H. Y. Liu, X. D. Wang, B. Xu, D. Ding, W. H. Jiang, J. Wu, and Z. G. Wang, “Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots,” J. Cryst. Growth 213(1–2), 193–197 (2000).
[Crossref]

Watson, I. M.

C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
[Crossref]

R. W. Martin, P. R. Edwards, R. Pecharroman-Gallego, C. Liu, C. J. Deatcher, I. M. Watson, and K. P. O’Donnell, “Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells,” J. Phys. D Appl. Phys. 35(7), 604–608 (2002).
[Crossref]

Wen, T. C.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Wu, J.

H. Y. Liu, X. D. Wang, B. Xu, D. Ding, W. H. Jiang, J. Wu, and Z. G. Wang, “Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots,” J. Cryst. Growth 213(1–2), 193–197 (2000).
[Crossref]

Wu, L. W.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Xu, B.

H. Y. Liu, X. D. Wang, B. Xu, D. Ding, W. H. Jiang, J. Wu, and Z. G. Wang, “Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots,” J. Cryst. Growth 213(1–2), 193–197 (2000).
[Crossref]

Yamada, M.

T. Mukai, M. Yamada, and S. Nakamura, “Characteristics of InGaN-based uv/blue/green/amber/red light-emitting diodes,” Jpn. J. Appl. Phys. 38(7), 3976–3981 (1999).
[Crossref]

Yamamoto, A.

A. Yamamoto, K. Sugita, and A. Hashimoto, “Elucidation of factors obstructing quality improvement of MOVPE-grown InN,” J. Cryst. Growth 311(22), 4636–4640 (2009).
[Crossref]

Yang, C. C.

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90(15), 151122 (2007).
[Crossref]

H. S. Chen, C. F. Lu, D. M. Yeh, C. F. Huang, J. J. Huang, and C. C. Yang, “Orange–red light-emitting diodes based on a prestrained InGaN–GaN quantum-well epitaxy structure,” IEEE Photonics Technol. Lett. 18(21), 2269–2271 (2006).
[Crossref]

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

Yang, G. M.

H. K. Cho, J. Y. Lee, C. S. Kim, and G. M. Yang, “Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1166–1170 (2002).
[Crossref]

Yang, J. W.

E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–979 (2002).
[Crossref]

Yang, M.

Yeh, D. M.

H. S. Chen, C. F. Lu, D. M. Yeh, C. F. Huang, J. J. Huang, and C. C. Yang, “Orange–red light-emitting diodes based on a prestrained InGaN–GaN quantum-well epitaxy structure,” IEEE Photonics Technol. Lett. 18(21), 2269–2271 (2006).
[Crossref]

Yi, X.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong carrier localization effect in carrier dynamics of 585nm InGaN amber light-emitting diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

Yoon, E.

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

Yoon, H. S.

M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, “Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 90(11), 5642–5646 (2001).
[Crossref]

Yu, S. W.

M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, “Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 90(11), 5642–5646 (2001).
[Crossref]

Zamoryanskaya, M. V.

K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Y. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov, and A. A. Toropov, “Phase separation in InxGa1‐xN (0.10< x< 0.40),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(3), 527–531 (2013).
[Crossref]

Zhang, L.

L. Zhang, K. Cheng, S. Degroote, M. Leys, M. Germain, and G. Borghs, “Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy,” J. Appl. Phys. 108(7), 073522 (2010).
[Crossref]

Appl. Phys. Express (1)

D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa, “Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Express 3(7), 075601 (2010).
[Crossref]

Appl. Phys. Lett. (7)

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90(15), 151122 (2007).
[Crossref]

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010).
[Crossref]

S. Jahangir, M. Mandl, M. Strassburg, and P. Bhattacharya, “Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon,” Appl. Phys. Lett. 102(7), 071101 (2013).
[Crossref]

H. C. Lin, R. S. Lin, and J. I. Chyi, “Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment,” Appl. Phys. Lett. 92(16), 161113 (2008).
[Crossref]

Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chou, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–979 (2002).
[Crossref]

IEEE J. Quantum Electron. (1)

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-Gan multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

M. V. Klymenko, O. Shulika, and I. A. Sukhoivanov, “Theoretical study of optical transition matrix elements in InGaN/GaN SQW subject to indium surface segregation,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1374–1380 (2011).
[Crossref]

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

IEEE Photonics Technol. Lett. (1)

H. S. Chen, C. F. Lu, D. M. Yeh, C. F. Huang, J. J. Huang, and C. C. Yang, “Orange–red light-emitting diodes based on a prestrained InGaN–GaN quantum-well epitaxy structure,” IEEE Photonics Technol. Lett. 18(21), 2269–2271 (2006).
[Crossref]

J. Appl. Phys. (5)

S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park, “In-rich InGaN GaN quantum wells grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044906 (2006).
[Crossref]

L. Zhang, K. Cheng, S. Degroote, M. Leys, M. Germain, and G. Borghs, “Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy,” J. Appl. Phys. 108(7), 073522 (2010).
[Crossref]

H. K. Cho, J. Y. Lee, C. S. Kim, and G. M. Yang, “Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1166–1170 (2002).
[Crossref]

M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, S. W. Yu, C. H. Hong, E. K. Suh, and H. J. Lee, “Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition,” J. Appl. Phys. 90(11), 5642–5646 (2001).
[Crossref]

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong carrier localization effect in carrier dynamics of 585nm InGaN amber light-emitting diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

J. Cryst. Growth (2)

H. Y. Liu, X. D. Wang, B. Xu, D. Ding, W. H. Jiang, J. Wu, and Z. G. Wang, “Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots,” J. Cryst. Growth 213(1–2), 193–197 (2000).
[Crossref]

A. Yamamoto, K. Sugita, and A. Hashimoto, “Elucidation of factors obstructing quality improvement of MOVPE-grown InN,” J. Cryst. Growth 311(22), 4636–4640 (2009).
[Crossref]

J. Phys. D Appl. Phys. (2)

B. Damilano and B. Gil, “Yellow-red emission from (Ga,In)N heterostructures,” J. Phys. D Appl. Phys. 48(40), 403111 (2015).
[Crossref]

R. W. Martin, P. R. Edwards, R. Pecharroman-Gallego, C. Liu, C. J. Deatcher, I. M. Watson, and K. P. O’Donnell, “Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells,” J. Phys. D Appl. Phys. 35(7), 604–608 (2002).
[Crossref]

Jpn. J. Appl. Phys. (2)

S. J. Leem, M. H. Kim, J. Shin, Y. Choi, and J. Jeong, “The effects of In flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 40(2), L371–L373 (2001).
[Crossref]

T. Mukai, M. Yamada, and S. Nakamura, “Characteristics of InGaN-based uv/blue/green/amber/red light-emitting diodes,” Jpn. J. Appl. Phys. 38(7), 3976–3981 (1999).
[Crossref]

Opt. Express (1)

Phys. Status Solidi., C Curr. Top. Solid State Phys. (2)

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

K. G. Belyaev, M. V. Rakhlin, V. N. Jmerik, A. M. Mizerov, Y. V. Kuznetsova, M. V. Zamoryanskaya, S. V. Ivanov, and A. A. Toropov, “Phase separation in InxGa1‐xN (0.10< x< 0.40),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(3), 527–531 (2013).
[Crossref]

Semicond. Sci. Technol. (1)

C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, “In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi quantum well structures,” Semicond. Sci. Technol. 18(4), 212–218 (2003).
[Crossref]

Superlattices Microstruct. (1)

T. H. Ngo, B. Gil, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency and auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction,” Superlattices Microstruct. 103, 245–251 (2017).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1 Schematic diagrams for (a) the C-LED and (b) the HI-In y Ga1- y N/In x Ga1- x N LED with a conceptual illustration of the Ga-FI technique for the growth of a HI-In y Ga1- y N well.
Fig. 2
Fig. 2 Cross-sectional TEM images for (a) the C-LED, (b) the S1-LED, (c) the S2-LED, (d) the S3-LED, (e) the S4-LED, and (f) the S5-LED.
Fig. 3
Fig. 3 (a) HRXRD rocking curves and (b) PL spectra of the LED samples.
Fig. 4
Fig. 4 (a) HRXRD rocking curves and (b) PL spectra for the S1-LED (0), S2-LED (0.217), and S3-LED (0.434) with different In/Ga flow ratio for the In x Ga1- x N barrier. (c) Normalized EL spectra for the LED samples at injection current of 20 mA, where the insets are the emission images for the LED samples taken during the EL measurements.
Fig. 5
Fig. 5 (a) PL spectra of the S3-LED (905 °C), the S4-LED (915 °C), and the S5-LED (895 °C) with different growth temperature for In x Ga1- x N barrier measured at RT. (b) EL spectra for the LED samples measured at injection current of 20 mA, where the insets are the luminescence images of the LED chips. Summaries on the (c) output powers with the EQEs (inset) and (d) emission wavelengths for the LED samples depending on the injection current ranging from 4 to 120 mA.

Tables (2)

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Table 1 Summary on the growth conditions for the LED samples.

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Table 2 Structural properties of the HI-In y Ga1- y N well and the In x Ga1- x N barrier for the LED samples

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