Abstract

We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.

© 2017 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

Christian Kuhn, Luca Sulmoni, Martin Guttmann, Johannes Glaab, Norman Susilo, Tim Wernicke, Markus Weyers, and Michael Kneissl
Photon. Res. 7(5) B7-B11 (2019)

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

Yuji Zhao, Houqiang Fu, George T. Wang, and Shuji Nakamura
Adv. Opt. Photon. 10(1) 246-308 (2018)

Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array

Charng-Gan Tu, Che-Hao Liao, Yu-Feng Yao, Horng-Shyang Chen, Chun-Han Lin, Chia-Ying Su, Pei-Ying Shih, Wei-Han Chen, Erwin Zhu, Yean-Woei Kiang, and C. C. Yang
Opt. Express 22(S7) A1799-A1809 (2014)

References

  • View by:
  • |
  • |
  • |

  1. A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
    [Crossref]
  2. Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
    [Crossref]
  3. S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
    [Crossref]
  4. S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, S. P. DenBaars, and S. Nakamura, “Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission,” J. Appl. Phys. 120(3), 033102 (2016).
    [Crossref]
  5. E. Kioupakis, Q. Yan, and C. G. Van de Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
    [Crossref]
  6. B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
    [Crossref]
  7. B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, and J. Massies, “Blue-green and white color tuning of monolithic light emitting diodes,” J. Appl. Phys. 108(7), 073115 (2010).
    [Crossref]
  8. B. Van Daele, G. Van Tendeloo, K. Jacobs, I. Moerman, and M. R. Leys, “Formation of metallic in in InGaN/GaN multiquantum wells,” Appl. Phys. Lett. 85(19), 4379–4381 (2004).
    [Crossref]
  9. M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
    [Crossref]
  10. A. H. Reading, J. J. Richardson, C.-C. Pan, S. Nakamura, and S. P. DenBaars, “High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy,” Opt. Express 20(1), A13–A19 (2012).
    [Crossref] [PubMed]
  11. S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
    [Crossref]
  12. X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
    [Crossref]
  13. X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
    [Crossref]
  14. X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A 18(4), 1144–1148 (2000).
    [Crossref]
  15. S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-Type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
    [Crossref]
  16. A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, “High doping level in Mg-doped GaN layers grown at low temperature,” J. Appl. Phys. 103(1), 013110 (2008).
    [Crossref]
  17. C. A. Hurni, J. R. Lang, P. G. Burke, and J. S. Speck, “Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy,” Appl. Phys. Lett. 101(10), 102106 (2012).
    [Crossref]
  18. M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
    [Crossref]
  19. E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III–nitride light-emitting diodes,” Appl. Phys. Express 9(2), 022102 (2016).
    [Crossref]
  20. B. P. Yonkee, E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact,” Opt. Express 24(7), 7816–7822 (2016).
    [Crossref] [PubMed]
  21. J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
    [Crossref]
  22. J. Neugebauer and C. G. Van de Walle, “Role of hydrogen in doping of GaN,” Appl. Phys. Lett. 68(13), 1829–1831 (1996).
    [Crossref]
  23. L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
    [Crossref]
  24. E. C. H. Kyle, S. W. Kaun, P. G. Burke, F. Wu, Y.-R. Wu, and J. S. Speck, “High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy,” J. Appl. Phys. 115(19), 193702 (2014).
    [Crossref]
  25. S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
    [Crossref]
  26. Y. Kawaguchi, C. Huang, Y. Wu, Y. Zhao, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage,” Jpn. J. Appl. Phys. 52(8S), 08JC08 (2013).
    [Crossref]
  27. S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
    [Crossref]
  28. Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
    [Crossref]
  29. F. Wu, Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar (20-2-1) single InGaN quantum wells for long wavelength emission,” Appl. Phys. Lett. 104(15), 151901 (2014).
    [Crossref]
  30. A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
    [Crossref]
  31. H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
    [Crossref]
  32. Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
    [Crossref]
  33. R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
    [Crossref]
  34. T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
    [Crossref]
  35. E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
    [Crossref]

2016 (3)

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, S. P. DenBaars, and S. Nakamura, “Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission,” J. Appl. Phys. 120(3), 033102 (2016).
[Crossref]

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III–nitride light-emitting diodes,” Appl. Phys. Express 9(2), 022102 (2016).
[Crossref]

B. P. Yonkee, E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact,” Opt. Express 24(7), 7816–7822 (2016).
[Crossref] [PubMed]

2015 (4)

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

2014 (5)

M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
[Crossref]

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
[Crossref]

E. C. H. Kyle, S. W. Kaun, P. G. Burke, F. Wu, Y.-R. Wu, and J. S. Speck, “High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy,” J. Appl. Phys. 115(19), 193702 (2014).
[Crossref]

F. Wu, Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar (20-2-1) single InGaN quantum wells for long wavelength emission,” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

2013 (1)

Y. Kawaguchi, C. Huang, Y. Wu, Y. Zhao, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage,” Jpn. J. Appl. Phys. 52(8S), 08JC08 (2013).
[Crossref]

2012 (5)

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
[Crossref]

E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
[Crossref]

A. H. Reading, J. J. Richardson, C.-C. Pan, S. Nakamura, and S. P. DenBaars, “High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy,” Opt. Express 20(1), A13–A19 (2012).
[Crossref] [PubMed]

E. Kioupakis, Q. Yan, and C. G. Van de Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

C. A. Hurni, J. R. Lang, P. G. Burke, and J. S. Speck, “Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy,” Appl. Phys. Lett. 101(10), 102106 (2012).
[Crossref]

2011 (2)

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

2010 (4)

R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, and J. Massies, “Blue-green and white color tuning of monolithic light emitting diodes,” J. Appl. Phys. 108(7), 073115 (2010).
[Crossref]

2009 (2)

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

2008 (2)

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
[Crossref]

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, “High doping level in Mg-doped GaN layers grown at low temperature,” J. Appl. Phys. 103(1), 013110 (2008).
[Crossref]

2006 (1)

A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

2004 (1)

B. Van Daele, G. Van Tendeloo, K. Jacobs, I. Moerman, and M. R. Leys, “Formation of metallic in in InGaN/GaN multiquantum wells,” Appl. Phys. Lett. 85(19), 4379–4381 (2004).
[Crossref]

2000 (2)

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A 18(4), 1144–1148 (2000).
[Crossref]

1999 (1)

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

1996 (1)

J. Neugebauer and C. G. Van de Walle, “Role of hydrogen in doping of GaN,” Appl. Phys. Lett. 68(13), 1829–1831 (1996).
[Crossref]

1992 (1)

S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-Type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

Adachi, M.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Akita, K.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Amano, H.

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

Baker, T. J.

A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

Biebersdorf, A.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Bläsing, J.

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
[Crossref]

Bolognesi, C. R.

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
[Crossref]

Brault, J.

B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, and J. Massies, “Blue-green and white color tuning of monolithic light emitting diodes,” J. Appl. Phys. 108(7), 073115 (2010).
[Crossref]

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, “High doping level in Mg-doped GaN layers grown at low temperature,” J. Appl. Phys. 103(1), 013110 (2008).
[Crossref]

Brinkley, S.

E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
[Crossref]

Bügler, M.

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
[Crossref]

Burke, P. G.

E. C. H. Kyle, S. W. Kaun, P. G. Burke, F. Wu, Y.-R. Wu, and J. S. Speck, “High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy,” J. Appl. Phys. 115(19), 193702 (2014).
[Crossref]

C. A. Hurni, J. R. Lang, P. G. Burke, and J. S. Speck, “Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy,” Appl. Phys. Lett. 101(10), 102106 (2012).
[Crossref]

Cao, X. A.

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A 18(4), 1144–1148 (2000).
[Crossref]

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

Carlin, J.-F.

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
[Crossref]

Chung, R. B.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Cohen, D.

J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Dadgar, A.

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
[Crossref]

Damilano, B.

B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, and J. Massies, “Blue-green and white color tuning of monolithic light emitting diodes,” J. Appl. Phys. 108(7), 073115 (2010).
[Crossref]

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, “High doping level in Mg-doped GaN layers grown at low temperature,” J. Appl. Phys. 103(1), 013110 (2008).
[Crossref]

Dang, G. T.

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A 18(4), 1144–1148 (2000).
[Crossref]

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

Demolon, P.

B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, and J. Massies, “Blue-green and white color tuning of monolithic light emitting diodes,” J. Appl. Phys. 108(7), 073115 (2010).
[Crossref]

DenBaars, S.

E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
[Crossref]

DenBaars, S. P.

B. P. Yonkee, E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact,” Opt. Express 24(7), 7816–7822 (2016).
[Crossref] [PubMed]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, S. P. DenBaars, and S. Nakamura, “Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission,” J. Appl. Phys. 120(3), 033102 (2016).
[Crossref]

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III–nitride light-emitting diodes,” Appl. Phys. Express 9(2), 022102 (2016).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
[Crossref]

F. Wu, Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar (20-2-1) single InGaN quantum wells for long wavelength emission,” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

Y. Kawaguchi, C. Huang, Y. Wu, Y. Zhao, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage,” Jpn. J. Appl. Phys. 52(8S), 08JC08 (2013).
[Crossref]

A. H. Reading, J. J. Richardson, C.-C. Pan, S. Nakamura, and S. P. DenBaars, “High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy,” Opt. Express 20(1), A13–A19 (2012).
[Crossref] [PubMed]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
[Crossref]

Dussaigne, A.

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, “High doping level in Mg-doped GaN layers grown at low temperature,” J. Appl. Phys. 103(1), 013110 (2008).
[Crossref]

Enya, Y.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Farrell, R. M.

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, S. P. DenBaars, and S. Nakamura, “Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission,” J. Appl. Phys. 120(3), 033102 (2016).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

Feezell, D.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Feezell, D. F.

M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
[Crossref]

Fellows, N. N.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
[Crossref]

Feltin, E.

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, “High doping level in Mg-doped GaN layers grown at low temperature,” J. Appl. Phys. 103(1), 013110 (2008).
[Crossref]

Fischer, A. M.

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

Fritze, S.

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
[Crossref]

Fujito, K.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Galler, B.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Giraud, E.

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
[Crossref]

Grandjean, N.

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
[Crossref]

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
[Crossref]

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, “High doping level in Mg-doped GaN layers grown at low temperature,” J. Appl. Phys. 103(1), 013110 (2008).
[Crossref]

Ha, J.

R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

Hahn, B.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Hardy, M. T.

M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
[Crossref]

Hickman, R.

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

Hickman, R. A.

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

Hirasawa, H.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
[Crossref]

Hoeppel, L.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Hoffmann, A.

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
[Crossref]

Hu, Y.-L.

E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
[Crossref]

Huang, C.

Y. Kawaguchi, C. Huang, Y. Wu, Y. Zhao, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage,” Jpn. J. Appl. Phys. 52(8S), 08JC08 (2013).
[Crossref]

Huang, C.-Y.

M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Huang, Y.

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

Huault, T.

B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, and J. Massies, “Blue-green and white color tuning of monolithic light emitting diodes,” J. Appl. Phys. 108(7), 073115 (2010).
[Crossref]

Hurni, C. A.

C. A. Hurni, J. R. Lang, P. G. Burke, and J. S. Speck, “Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy,” Appl. Phys. Lett. 101(10), 102106 (2012).
[Crossref]

Iida, D.

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

Ikegami, T.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Imade, M.

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Iso, K.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
[Crossref]

Iwasa, N.

S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-Type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

Iwaya, M.

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

Jacobs, K.

B. Van Daele, G. Van Tendeloo, K. Jacobs, I. Moerman, and M. R. Leys, “Formation of metallic in in InGaN/GaN multiquantum wells,” Appl. Phys. Lett. 85(19), 4379–4381 (2004).
[Crossref]

Katayama, K.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Kaun, S. W.

E. C. H. Kyle, S. W. Kaun, P. G. Burke, F. Wu, Y.-R. Wu, and J. S. Speck, “High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy,” J. Appl. Phys. 115(19), 193702 (2014).
[Crossref]

Kawaguchi, Y.

Y. Kawaguchi, C. Huang, Y. Wu, Y. Zhao, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage,” Jpn. J. Appl. Phys. 52(8S), 08JC08 (2013).
[Crossref]

Kelchner, K. M.

E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
[Crossref]

Kioupakis, E.

E. Kioupakis, Q. Yan, and C. G. Van de Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

Koslow, I.

R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

Kowsz, S. J.

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, S. P. DenBaars, and S. Nakamura, “Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission,” J. Appl. Phys. 120(3), 033102 (2016).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Kraeuter, G.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Krost, A.

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
[Crossref]

Kyle, E. C. H.

E. C. H. Kyle, S. W. Kaun, P. G. Burke, F. Wu, Y.-R. Wu, and J. S. Speck, “High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy,” J. Appl. Phys. 115(19), 193702 (2014).
[Crossref]

Kyono, T.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Lang, J. R.

C. A. Hurni, J. R. Lang, P. G. Burke, and J. S. Speck, “Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy,” Appl. Phys. Lett. 101(10), 102106 (2012).
[Crossref]

Laubsch, A.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Lee, C.

Leonard, J. T.

B. P. Yonkee, E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact,” Opt. Express 24(7), 7816–7822 (2016).
[Crossref] [PubMed]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Leys, M. R.

B. Van Daele, G. Van Tendeloo, K. Jacobs, I. Moerman, and M. R. Leys, “Formation of metallic in in InGaN/GaN multiquantum wells,” Appl. Phys. Lett. 85(19), 4379–4381 (2004).
[Crossref]

Lin, Y.-D.

R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

Lugani, L.

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
[Crossref]

Lugauer, H.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Malinverni, M.

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
[Crossref]

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
[Crossref]

Margalith, T.

J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Marti, D.

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
[Crossref]

Martin, D.

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
[Crossref]

Massies, J.

B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, and J. Massies, “Blue-green and white color tuning of monolithic light emitting diodes,” J. Appl. Phys. 108(7), 073115 (2010).
[Crossref]

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, “High doping level in Mg-doped GaN layers grown at low temperature,” J. Appl. Phys. 103(1), 013110 (2008).
[Crossref]

Masui, H.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
[Crossref]

Matioli, E.

E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
[Crossref]

Meyer, T.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Moerman, I.

B. Van Daele, G. Van Tendeloo, K. Jacobs, I. Moerman, and M. R. Leys, “Formation of metallic in in InGaN/GaN multiquantum wells,” Appl. Phys. Lett. 85(19), 4379–4381 (2004).
[Crossref]

Mori, Y.

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Mukai, T.

S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-Type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

Nakamura, S.

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III–nitride light-emitting diodes,” Appl. Phys. Express 9(2), 022102 (2016).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, S. P. DenBaars, and S. Nakamura, “Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission,” J. Appl. Phys. 120(3), 033102 (2016).
[Crossref]

B. P. Yonkee, E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact,” Opt. Express 24(7), 7816–7822 (2016).
[Crossref] [PubMed]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
[Crossref]

F. Wu, Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar (20-2-1) single InGaN quantum wells for long wavelength emission,” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

Y. Kawaguchi, C. Huang, Y. Wu, Y. Zhao, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage,” Jpn. J. Appl. Phys. 52(8S), 08JC08 (2013).
[Crossref]

A. H. Reading, J. J. Richardson, C.-C. Pan, S. Nakamura, and S. P. DenBaars, “High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy,” Opt. Express 20(1), A13–A19 (2012).
[Crossref] [PubMed]

E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
[Crossref]

A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-Type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

Nakamura, T.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Natali, F.

B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, and J. Massies, “Blue-green and white color tuning of monolithic light emitting diodes,” J. Appl. Phys. 108(7), 073115 (2010).
[Crossref]

Neugebauer, J.

J. Neugebauer and C. G. Van de Walle, “Role of hydrogen in doping of GaN,” Appl. Phys. Lett. 68(13), 1829–1831 (1996).
[Crossref]

Oh, S. H.

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III–nitride light-emitting diodes,” Appl. Phys. Express 9(2), 022102 (2016).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, S. P. DenBaars, and S. Nakamura, “Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission,” J. Appl. Phys. 120(3), 033102 (2016).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Ohta, H.

R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

Pan, C.-C.

A. H. Reading, J. J. Richardson, C.-C. Pan, S. Nakamura, and S. P. DenBaars, “High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy,” Opt. Express 20(1), A13–A19 (2012).
[Crossref] [PubMed]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Pearton, S. J.

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A 18(4), 1144–1148 (2000).
[Crossref]

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

Peter, M.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Pfaff, N.

R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

Pimputkar, S.

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Ponce, F. A.

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

Pynn, C. D.

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, S. P. DenBaars, and S. Nakamura, “Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission,” J. Appl. Phys. 120(3), 033102 (2016).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Reading, A. H.

Ren, F.

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A 18(4), 1144–1148 (2000).
[Crossref]

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

Richardson, J. J.

Rohrbeck, A.

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
[Crossref]

Romanov, A.

F. Wu, Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar (20-2-1) single InGaN quantum wells for long wavelength emission,” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

Romanov, A. E.

A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

Sabathil, M.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Senda, R.

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

Senoh, M.

S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-Type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

Shul, R. J.

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A 18(4), 1144–1148 (2000).
[Crossref]

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

Sonoda, J.

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Speck, J.

E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
[Crossref]

Speck, J. S.

B. P. Yonkee, E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact,” Opt. Express 24(7), 7816–7822 (2016).
[Crossref] [PubMed]

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III–nitride light-emitting diodes,” Appl. Phys. Express 9(2), 022102 (2016).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
[Crossref]

E. C. H. Kyle, S. W. Kaun, P. G. Burke, F. Wu, Y.-R. Wu, and J. S. Speck, “High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy,” J. Appl. Phys. 115(19), 193702 (2014).
[Crossref]

F. Wu, Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar (20-2-1) single InGaN quantum wells for long wavelength emission,” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

C. A. Hurni, J. R. Lang, P. G. Burke, and J. S. Speck, “Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy,” Appl. Phys. Lett. 101(10), 102106 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
[Crossref]

A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

Steegmueller, U.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Strassburg, M.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

Suihkonen, S.

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Sumitomo, T.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Sun, K.

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

Tanaka, S.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Tirelli, S.

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
[Crossref]

Tokuyama, S.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Ueno, M.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Van Daele, B.

B. Van Daele, G. Van Tendeloo, K. Jacobs, I. Moerman, and M. R. Leys, “Formation of metallic in in InGaN/GaN multiquantum wells,” Appl. Phys. Lett. 85(19), 4379–4381 (2004).
[Crossref]

Van de Walle, C. G.

E. Kioupakis, Q. Yan, and C. G. Van de Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

J. Neugebauer and C. G. Van de Walle, “Role of hydrogen in doping of GaN,” Appl. Phys. Lett. 68(13), 1829–1831 (1996).
[Crossref]

van Hove, J. M.

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

Van Tendeloo, G.

B. Van Daele, G. Van Tendeloo, K. Jacobs, I. Moerman, and M. R. Leys, “Formation of metallic in in InGaN/GaN multiquantum wells,” Appl. Phys. Lett. 85(19), 4379–4381 (2004).
[Crossref]

Wei, Q.

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

Weisbuch, C.

E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
[Crossref]

Witte, H.

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
[Crossref]

Wu, F.

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III–nitride light-emitting diodes,” Appl. Phys. Express 9(2), 022102 (2016).
[Crossref]

E. C. H. Kyle, S. W. Kaun, P. G. Burke, F. Wu, Y.-R. Wu, and J. S. Speck, “High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy,” J. Appl. Phys. 115(19), 193702 (2014).
[Crossref]

M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
[Crossref]

F. Wu, Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar (20-2-1) single InGaN quantum wells for long wavelength emission,” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

Wu, Y.

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

Y. Kawaguchi, C. Huang, Y. Wu, Y. Zhao, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage,” Jpn. J. Appl. Phys. 52(8S), 08JC08 (2013).
[Crossref]

Wu, Y.-R.

E. C. H. Kyle, S. W. Kaun, P. G. Burke, F. Wu, Y.-R. Wu, and J. S. Speck, “High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy,” J. Appl. Phys. 115(19), 193702 (2014).
[Crossref]

Wu, Z.

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

Yamada, H.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
[Crossref]

Yamamoto, S.

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Yan, Q.

E. Kioupakis, Q. Yan, and C. G. Van de Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Yonkee, B. P.

B. P. Yonkee, E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact,” Opt. Express 24(7), 7816–7822 (2016).
[Crossref] [PubMed]

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III–nitride light-emitting diodes,” Appl. Phys. Express 9(2), 022102 (2016).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Yoshizumi, Y.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Young, E. C.

B. P. Yonkee, E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact,” Opt. Express 24(7), 7816–7822 (2016).
[Crossref] [PubMed]

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III–nitride light-emitting diodes,” Appl. Phys. Express 9(2), 022102 (2016).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Zhang, A. P.

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A 18(4), 1144–1148 (2000).
[Crossref]

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

Zhang, L.

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A 18(4), 1144–1148 (2000).
[Crossref]

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

Zhao, Y.

M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
[Crossref]

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

F. Wu, Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar (20-2-1) single InGaN quantum wells for long wavelength emission,” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

Y. Kawaguchi, C. Huang, Y. Wu, Y. Zhao, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage,” Jpn. J. Appl. Phys. 52(8S), 08JC08 (2013).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Appl. Phys. Express (5)

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III–nitride light-emitting diodes,” Appl. Phys. Express 9(2), 022102 (2016).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {20-21} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m -Plane GaN,” Appl. Phys. Express 2, 041002 (2009).
[Crossref]

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar (20-21) GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Appl. Phys. Lett. (12)

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

F. Wu, Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar (20-2-1) single InGaN quantum wells for long wavelength emission,” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, “High Si and Ge n-type doping of GaN doping - Limits and impact on stress,” Appl. Phys. Lett. 100(12), 122104 (2012).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

J. Neugebauer and C. G. Van de Walle, “Role of hydrogen in doping of GaN,” Appl. Phys. Lett. 68(13), 1829–1831 (1996).
[Crossref]

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, and N. Grandjean, “n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts,” Appl. Phys. Lett. 105(20), 202113 (2014).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

E. Kioupakis, Q. Yan, and C. G. Van de Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

B. Van Daele, G. Van Tendeloo, K. Jacobs, I. Moerman, and M. R. Leys, “Formation of metallic in in InGaN/GaN multiquantum wells,” Appl. Phys. Lett. 85(19), 4379–4381 (2004).
[Crossref]

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569–2571 (1999).
[Crossref]

C. A. Hurni, J. R. Lang, P. G. Burke, and J. S. Speck, “Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy,” Appl. Phys. Lett. 101(10), 102106 (2012).
[Crossref]

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
[Crossref]

IEEE Photonics Technol. Lett. (1)

M. T. Hardy, F. Wu, C.-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes,” IEEE Photonics Technol. Lett. 26(1), 43–46 (2014).
[Crossref]

J. Appl. Phys. (5)

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, S. P. DenBaars, and S. Nakamura, “Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission,” J. Appl. Phys. 120(3), 033102 (2016).
[Crossref]

A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, and J. Massies, “Blue-green and white color tuning of monolithic light emitting diodes,” J. Appl. Phys. 108(7), 073115 (2010).
[Crossref]

E. C. H. Kyle, S. W. Kaun, P. G. Burke, F. Wu, Y.-R. Wu, and J. S. Speck, “High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy,” J. Appl. Phys. 115(19), 193702 (2014).
[Crossref]

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, “High doping level in Mg-doped GaN layers grown at low temperature,” J. Appl. Phys. 103(1), 013110 (2008).
[Crossref]

J. Cryst. Growth (1)

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

J. Electron. Mater. (1)

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, J. M. van Hove, R. A. Hickman, R. J. Shul, and L. Zhang, “Plasma damage in p-GaN,” J. Electron. Mater. 29(3), 256–261 (2000).
[Crossref]

J. Vac. Sci. Technol. A (1)

X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, “Schottky diode measurements of dry etch damage in n- and p-type GaN,” J. Vac. Sci. Technol. A 18(4), 1144–1148 (2000).
[Crossref]

Jpn. J. Appl. Phys. (4)

S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-Type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

Y. Kawaguchi, C. Huang, Y. Wu, Y. Zhao, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage,” Jpn. J. Appl. Phys. 52(8S), 08JC08 (2013).
[Crossref]

R. B. Chung, Y.-D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

Light Sci. Appl. (1)

E. Matioli, S. Brinkley, K. M. Kelchner, Y.-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “High-brightness polarized light-emitting diodes,” Light Sci. Appl. 1(8), e22 (2012).
[Crossref]

Opt. Express (2)

Phys. Status Solidi (2)

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi 8(7-8), 2369–2371 (2011).
[Crossref]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi 205(5), 1203–1206 (2008).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1
Fig. 1 Cross-sectional schematic of a ( 20 2 ¯ 1 ) device that used a TJ to grow optically pumped QWs on top of electrically injected QWs. The TJ was grown by MBE and the remaining layers were grown by MOCVD.
Fig. 2
Fig. 2 Current−voltage characteristic of the device in Fig. 1.
Fig. 3
Fig. 3 EL emission spectrum for the device shown in Fig. 1 without a polarizer in the optical path. The peak at 450 nm is from the electrically injected LED and a peak at 560 nm is from the optically pumped QWs.
Fig. 4
Fig. 4 EL emission spectra with the polarizer aligned along [ 1 2 ¯ 10 ] ( x -direction) and with the polarizer aligned along [ 10 1 ¯ 4 ¯ ] ( y -direction).
Fig. 5
Fig. 5 Optical polarization ratios reported in the literature as a function of the peak emission wavelength for electrically injected ( 20 2 ¯ 1 ) InGaN QWs. The red diamond points indicate the polarization ratios of the optically pumped yellow QWs and electrically injected blue QWs from the ( 20 2 ¯ 1 ) TJ device measured in Fig. 4.
Fig. 6
Fig. 6 CIE x, y chromaticity diagram indicating the chromaticity coordinates corresponding to the spectrum in Fig. 3.

Metrics