Abstract

We report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensile-strained InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7–10 kA/cm2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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2017 (3)

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, and N. A. Cherkashin, “(In,Ga,Al)P–GaP laser diodes grown on high–index GaAs surfaces emitting in the green, yellow and bright red spectral range,” Semicond. Sci. Technol. 32(2), 025016 (2017).
[Crossref]

H. Hamada, “Characterization of gallium indium phosphide and progress of aluminum gallium indium phosphide system quantum–well laser diode,” Materials (Basel) 10(8), 875 (2017).
[Crossref] [PubMed]

N. Cherkashin, T. Denneulin, and M. J. Hÿtch, “Electron microscopy by specimen design: application to strain measurements,” Sci. Rep. 7(1), 12394 (2017).
[Crossref] [PubMed]

2016 (3)

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

N. N. Ledentsov, V. A. Shchukin, M. V. Maximov, N. Yu. Gordeev, N. A. Kaluzhniy, S. A. Mintairov, A. S. Payusov, and Yu. M. Shernyakov, “Optical Mode Engineering and High Power Density per Facet Length (>8.4 kW/cm2) in Tilted Wave Laser Diodes,” Proc. SPIE 9733, 97330P (2016).
[Crossref]

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

2015 (1)

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

2014 (1)

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

2013 (3)

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Chaldyshev, “Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy,” Appl. Phys. Lett. 102(17), 173115 (2013).
[Crossref]

P. Avci, A. Gupta, M. Sadasivam, D. Vecchio, Z. Pam, N. Pam, and M. R. Hamblin, “Low-level laser (light) therapy (LLLT) in skin: stimulating, healing, restoring,” Semin. Cutan. Med. Surg. 32(1), 41–52 (2013).
[PubMed]

K. A. Fedorova, G. S. Sokolovskii, D. I. Nikitichev, P. R. Battle, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange-to-red tunable picosecond pulses by frequency doubling in a diode-pumped PPKTP waveguide,” Opt. Lett. 38(15), 2835–2837 (2013).
[Crossref] [PubMed]

2011 (2)

K. A. Fedorova, M. A. Cataluna, P. R. Battle, C. M. Kaleva, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange light generation from a PPKTP waveguide end pumped by a cw quantum–dot tunable laser diode,” Appl. Phys. B 103(1), 41–43 (2011).
[Crossref]

W. G. Telford, “Lasers in flow cytometry,” Methods Cell Biol. 102, 375–409 (2011).
[Crossref] [PubMed]

2009 (1)

S. Choudhary, K. Nouri, and M. L. Elsaie, “Photodynamic therapy in dermatology: a review,” Lasers Med. Sci. 24(6), 971–980 (2009).
[Crossref] [PubMed]

2005 (1)

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

2002 (1)

N. N. Ledentsov and V. A. Shchukin, “Novel concepts for injection lasers,” SPIE Opt. Eng. 41(12), 3193–3203 (2002).
[Crossref]

1999 (1)

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

1994 (3)

P. D. Bour, D. W. Treat, K. J. Beernink, B. S. Krusor, R. S. Geels, and D. F. Welch, “610–nm band AlGaInP single quantum well laser diode,” IEEE Photonics Technol. Lett. 6(2), 128–131 (1994).

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, and R. D. Dupuis, “Growth of high–quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition,” J. Cryst. Growth 145(1–4), 179–186 (1994).
[Crossref]

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

1993 (1)

T. Tanaka, H. Yanagisawa, M. Takimoto, and S. Minagawa, “Tensile–strained AlGaInP single quantum well LDs emitting at 615 nm,” Electron. Lett. 29(21), 1864–1866 (1993).
[Crossref]

1992 (2)

S. Tiwari and D. J. Frank, “Empirical fit to band discontinuities and barrier heights in III–V alloy systems,” Appl. Phys. Lett. 60(5), 630–632 (1992).
[Crossref]

H. Hamada, K. Tominaga, M. Shono, S. Honda, K. Yodoshi, and T. Yamaguchi, “Room temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier,” Electron. Lett. 28, 1834–1836 (1992).

1991 (1)

R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, “Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces,” Phys. Rev. Lett. 67(27), 3812–3815 (1991).
[Crossref] [PubMed]

1989 (1)

Ch. G. Van de Walle, “Band lineups and deformation potentials in the model-solid theory,” Phys. Rev. B Condens. Matter 39(3), 1871–1883 (1989).
[Crossref] [PubMed]

1988 (1)

M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford, “Short–wavelength (≤6400 Å) room‐temperature continuous operation of p–n In0.5(AlxGa1−x)0.5P quantum well lasers,” Appl. Phys. Lett. 53(19), 1826–1828 (1988).
[Crossref]

1986 (1)

H. Tanaka, Yu. Kawamura, and H. Asahi, “Refractive indices of In0.49Ga0.51–xAlxP lattice matched to GaAs,” J. Appl. Phys. 59(3), 985–986 (1986).
[Crossref]

1984 (1)

M. Ikeda, M. Honda, Y. Mori, K. Kaneko, and N. Watanabe, “Yellow–emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition,” Appl. Phys. Lett. 45(9), 964–965 (1984).
[Crossref]

1975 (1)

W. R. Hitchens, N. Holonyak, P. D. Wright, and J. J. Coleman, “Low–threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′ yellow double–heterojunction laser diodes (J<104 A/cm2, λ~5850 Å, 77°K),” Appl. Phys. Lett. 27(4), 245–247 (1975).
[Crossref]

Alferov, Zh. I.

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Alias, M. S.

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

Al-Jabr, A. A.

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

Alnahhas, B. A.

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

Anjum, D. H.

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

Asahi, H.

H. Tanaka, Yu. Kawamura, and H. Asahi, “Refractive indices of In0.49Ga0.51–xAlxP lattice matched to GaAs,” J. Appl. Phys. 59(3), 985–986 (1986).
[Crossref]

Avci, P.

P. Avci, A. Gupta, M. Sadasivam, D. Vecchio, Z. Pam, N. Pam, and M. R. Hamblin, “Low-level laser (light) therapy (LLLT) in skin: stimulating, healing, restoring,” Semin. Cutan. Med. Surg. 32(1), 41–52 (2013).
[PubMed]

Battle, P. R.

K. A. Fedorova, G. S. Sokolovskii, D. I. Nikitichev, P. R. Battle, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange-to-red tunable picosecond pulses by frequency doubling in a diode-pumped PPKTP waveguide,” Opt. Lett. 38(15), 2835–2837 (2013).
[Crossref] [PubMed]

K. A. Fedorova, M. A. Cataluna, P. R. Battle, C. M. Kaleva, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange light generation from a PPKTP waveguide end pumped by a cw quantum–dot tunable laser diode,” Appl. Phys. B 103(1), 41–43 (2011).
[Crossref]

Beernink, K. J.

P. D. Bour, D. W. Treat, K. J. Beernink, B. S. Krusor, R. S. Geels, and D. F. Welch, “610–nm band AlGaInP single quantum well laser diode,” IEEE Photonics Technol. Lett. 6(2), 128–131 (1994).

Bimberg, D.

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Bour, P. D.

P. D. Bour, D. W. Treat, K. J. Beernink, B. S. Krusor, R. S. Geels, and D. F. Welch, “610–nm band AlGaInP single quantum well laser diode,” IEEE Photonics Technol. Lett. 6(2), 128–131 (1994).

Caesar, M.

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Cataluna, M. A.

K. A. Fedorova, M. A. Cataluna, P. R. Battle, C. M. Kaleva, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange light generation from a PPKTP waveguide end pumped by a cw quantum–dot tunable laser diode,” Appl. Phys. B 103(1), 41–43 (2011).
[Crossref]

Chaldyshev, V. V.

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Chaldyshev, “Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy,” Appl. Phys. Lett. 102(17), 173115 (2013).
[Crossref]

Chelakara, R. V.

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, and R. D. Dupuis, “Growth of high–quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition,” J. Cryst. Growth 145(1–4), 179–186 (1994).
[Crossref]

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

Cherkashin, N.

N. Cherkashin, T. Denneulin, and M. J. Hÿtch, “Electron microscopy by specimen design: application to strain measurements,” Sci. Rep. 7(1), 12394 (2017).
[Crossref] [PubMed]

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Chaldyshev, “Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy,” Appl. Phys. Lett. 102(17), 173115 (2013).
[Crossref]

Cherkashin, N. A.

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, and N. A. Cherkashin, “(In,Ga,Al)P–GaP laser diodes grown on high–index GaAs surfaces emitting in the green, yellow and bright red spectral range,” Semicond. Sci. Technol. 32(2), 025016 (2017).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

Choudhary, S.

S. Choudhary, K. Nouri, and M. L. Elsaie, “Photodynamic therapy in dermatology: a review,” Lasers Med. Sci. 24(6), 971–980 (2009).
[Crossref] [PubMed]

Ciuba, F. J.

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, and R. D. Dupuis, “Growth of high–quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition,” J. Cryst. Growth 145(1–4), 179–186 (1994).
[Crossref]

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

Claverie, A.

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Chaldyshev, “Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy,” Appl. Phys. Lett. 102(17), 173115 (2013).
[Crossref]

Coleman, J. J.

W. R. Hitchens, N. Holonyak, P. D. Wright, and J. J. Coleman, “Low–threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′ yellow double–heterojunction laser diodes (J<104 A/cm2, λ~5850 Å, 77°K),” Appl. Phys. Lett. 27(4), 245–247 (1975).
[Crossref]

Craford, M. G.

M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford, “Short–wavelength (≤6400 Å) room‐temperature continuous operation of p–n In0.5(AlxGa1−x)0.5P quantum well lasers,” Appl. Phys. Lett. 53(19), 1826–1828 (1988).
[Crossref]

Dallesasse, M.

M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford, “Short–wavelength (≤6400 Å) room‐temperature continuous operation of p–n In0.5(AlxGa1−x)0.5P quantum well lasers,” Appl. Phys. Lett. 53(19), 1826–1828 (1988).
[Crossref]

Däweritz, L.

R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, “Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces,” Phys. Rev. Lett. 67(27), 3812–3815 (1991).
[Crossref] [PubMed]

Deng, Zh.

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

Denneulin, T.

N. Cherkashin, T. Denneulin, and M. J. Hÿtch, “Electron microscopy by specimen design: application to strain measurements,” Sci. Rep. 7(1), 12394 (2017).
[Crossref] [PubMed]

Deppe, D. G.

M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford, “Short–wavelength (≤6400 Å) room‐temperature continuous operation of p–n In0.5(AlxGa1−x)0.5P quantum well lasers,” Appl. Phys. Lett. 53(19), 1826–1828 (1988).
[Crossref]

Dong, J.

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

Dupuis, R. D.

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, and R. D. Dupuis, “Growth of high–quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition,” J. Cryst. Growth 145(1–4), 179–186 (1994).
[Crossref]

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

Elafandy, R. T.

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

Elsaie, M. L.

S. Choudhary, K. Nouri, and M. L. Elsaie, “Photodynamic therapy in dermatology: a review,” Lasers Med. Sci. 24(6), 971–980 (2009).
[Crossref] [PubMed]

Fedorova, K. A.

K. A. Fedorova, G. S. Sokolovskii, D. I. Nikitichev, P. R. Battle, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange-to-red tunable picosecond pulses by frequency doubling in a diode-pumped PPKTP waveguide,” Opt. Lett. 38(15), 2835–2837 (2013).
[Crossref] [PubMed]

K. A. Fedorova, M. A. Cataluna, P. R. Battle, C. M. Kaleva, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange light generation from a PPKTP waveguide end pumped by a cw quantum–dot tunable laser diode,” Appl. Phys. B 103(1), 41–43 (2011).
[Crossref]

Fertitta, K. G.

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, and R. D. Dupuis, “Growth of high–quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition,” J. Cryst. Growth 145(1–4), 179–186 (1994).
[Crossref]

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

Fletcher, R. M.

M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford, “Short–wavelength (≤6400 Å) room‐temperature continuous operation of p–n In0.5(AlxGa1−x)0.5P quantum well lasers,” Appl. Phys. Lett. 53(19), 1826–1828 (1988).
[Crossref]

Frank, D. J.

S. Tiwari and D. J. Frank, “Empirical fit to band discontinuities and barrier heights in III–V alloy systems,” Appl. Phys. Lett. 60(5), 630–632 (1992).
[Crossref]

Geels, R. S.

P. D. Bour, D. W. Treat, K. J. Beernink, B. S. Krusor, R. S. Geels, and D. F. Welch, “610–nm band AlGaInP single quantum well laser diode,” IEEE Photonics Technol. Lett. 6(2), 128–131 (1994).

Gerthsen, D.

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Gordeev, N. Yu.

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, and N. A. Cherkashin, “(In,Ga,Al)P–GaP laser diodes grown on high–index GaAs surfaces emitting in the green, yellow and bright red spectral range,” Semicond. Sci. Technol. 32(2), 025016 (2017).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, M. V. Maximov, N. Yu. Gordeev, N. A. Kaluzhniy, S. A. Mintairov, A. S. Payusov, and Yu. M. Shernyakov, “Optical Mode Engineering and High Power Density per Facet Length (>8.4 kW/cm2) in Tilted Wave Laser Diodes,” Proc. SPIE 9733, 97330P (2016).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

Gupta, A.

P. Avci, A. Gupta, M. Sadasivam, D. Vecchio, Z. Pam, N. Pam, and M. R. Hamblin, “Low-level laser (light) therapy (LLLT) in skin: stimulating, healing, restoring,” Semin. Cutan. Med. Surg. 32(1), 41–52 (2013).
[PubMed]

Hamada, H.

H. Hamada, “Characterization of gallium indium phosphide and progress of aluminum gallium indium phosphide system quantum–well laser diode,” Materials (Basel) 10(8), 875 (2017).
[Crossref] [PubMed]

H. Hamada, K. Tominaga, M. Shono, S. Honda, K. Yodoshi, and T. Yamaguchi, “Room temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier,” Electron. Lett. 28, 1834–1836 (1992).

Hamblin, M. R.

P. Avci, A. Gupta, M. Sadasivam, D. Vecchio, Z. Pam, N. Pam, and M. R. Hamblin, “Low-level laser (light) therapy (LLLT) in skin: stimulating, healing, restoring,” Semin. Cutan. Med. Surg. 32(1), 41–52 (2013).
[PubMed]

Hitchens, W. R.

W. R. Hitchens, N. Holonyak, P. D. Wright, and J. J. Coleman, “Low–threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′ yellow double–heterojunction laser diodes (J<104 A/cm2, λ~5850 Å, 77°K),” Appl. Phys. Lett. 27(4), 245–247 (1975).
[Crossref]

Hoffmann, A.

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Hohenstein, M.

R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, “Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces,” Phys. Rev. Lett. 67(27), 3812–3815 (1991).
[Crossref] [PubMed]

Holmes, A. L.

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, and R. D. Dupuis, “Growth of high–quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition,” J. Cryst. Growth 145(1–4), 179–186 (1994).
[Crossref]

Holonyak, N.

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford, “Short–wavelength (≤6400 Å) room‐temperature continuous operation of p–n In0.5(AlxGa1−x)0.5P quantum well lasers,” Appl. Phys. Lett. 53(19), 1826–1828 (1988).
[Crossref]

W. R. Hitchens, N. Holonyak, P. D. Wright, and J. J. Coleman, “Low–threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′ yellow double–heterojunction laser diodes (J<104 A/cm2, λ~5850 Å, 77°K),” Appl. Phys. Lett. 27(4), 245–247 (1975).
[Crossref]

Honda, M.

M. Ikeda, M. Honda, Y. Mori, K. Kaneko, and N. Watanabe, “Yellow–emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition,” Appl. Phys. Lett. 45(9), 964–965 (1984).
[Crossref]

Honda, S.

H. Hamada, K. Tominaga, M. Shono, S. Honda, K. Yodoshi, and T. Yamaguchi, “Room temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier,” Electron. Lett. 28, 1834–1836 (1992).

Hsieh, K. C.

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

Hÿtch, M. J.

N. Cherkashin, T. Denneulin, and M. J. Hÿtch, “Electron microscopy by specimen design: application to strain measurements,” Sci. Rep. 7(1), 12394 (2017).
[Crossref] [PubMed]

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Chaldyshev, “Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy,” Appl. Phys. Lett. 102(17), 173115 (2013).
[Crossref]

Ikeda, M.

M. Ikeda, M. Honda, Y. Mori, K. Kaneko, and N. Watanabe, “Yellow–emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition,” Appl. Phys. Lett. 45(9), 964–965 (1984).
[Crossref]

Islam, M. R.

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, and R. D. Dupuis, “Growth of high–quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition,” J. Cryst. Growth 145(1–4), 179–186 (1994).
[Crossref]

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

Kaleva, C. M.

K. A. Fedorova, M. A. Cataluna, P. R. Battle, C. M. Kaleva, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange light generation from a PPKTP waveguide end pumped by a cw quantum–dot tunable laser diode,” Appl. Phys. B 103(1), 41–43 (2011).
[Crossref]

Kalosha, V. P.

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

Kaluzhniy, N. A.

N. N. Ledentsov, V. A. Shchukin, M. V. Maximov, N. Yu. Gordeev, N. A. Kaluzhniy, S. A. Mintairov, A. S. Payusov, and Yu. M. Shernyakov, “Optical Mode Engineering and High Power Density per Facet Length (>8.4 kW/cm2) in Tilted Wave Laser Diodes,” Proc. SPIE 9733, 97330P (2016).
[Crossref]

Kaneko, K.

M. Ikeda, M. Honda, Y. Mori, K. Kaneko, and N. Watanabe, “Yellow–emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition,” Appl. Phys. Lett. 45(9), 964–965 (1984).
[Crossref]

Karachinsky, L. Ya.

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

Kawamura, Yu.

H. Tanaka, Yu. Kawamura, and H. Asahi, “Refractive indices of In0.49Ga0.51–xAlxP lattice matched to GaAs,” J. Appl. Phys. 59(3), 985–986 (1986).
[Crossref]

Kop’ev, P. S.

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Krestnikov, I. L.

K. A. Fedorova, G. S. Sokolovskii, D. I. Nikitichev, P. R. Battle, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange-to-red tunable picosecond pulses by frequency doubling in a diode-pumped PPKTP waveguide,” Opt. Lett. 38(15), 2835–2837 (2013).
[Crossref] [PubMed]

K. A. Fedorova, M. A. Cataluna, P. R. Battle, C. M. Kaleva, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange light generation from a PPKTP waveguide end pumped by a cw quantum–dot tunable laser diode,” Appl. Phys. B 103(1), 41–43 (2011).
[Crossref]

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Krusor, B. S.

P. D. Bour, D. W. Treat, K. J. Beernink, B. S. Krusor, R. S. Geels, and D. F. Welch, “610–nm band AlGaInP single quantum well laser diode,” IEEE Photonics Technol. Lett. 6(2), 128–131 (1994).

Kulagina, M. M.

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, and N. A. Cherkashin, “(In,Ga,Al)P–GaP laser diodes grown on high–index GaAs surfaces emitting in the green, yellow and bright red spectral range,” Semicond. Sci. Technol. 32(2), 025016 (2017).
[Crossref]

Kuo, C. P.

M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford, “Short–wavelength (≤6400 Å) room‐temperature continuous operation of p–n In0.5(AlxGa1−x)0.5P quantum well lasers,” Appl. Phys. Lett. 53(19), 1826–1828 (1988).
[Crossref]

Kuznetsov, S. M.

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

Ledentsov, N. N.

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, and N. A. Cherkashin, “(In,Ga,Al)P–GaP laser diodes grown on high–index GaAs surfaces emitting in the green, yellow and bright red spectral range,” Semicond. Sci. Technol. 32(2), 025016 (2017).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, M. V. Maximov, N. Yu. Gordeev, N. A. Kaluzhniy, S. A. Mintairov, A. S. Payusov, and Yu. M. Shernyakov, “Optical Mode Engineering and High Power Density per Facet Length (>8.4 kW/cm2) in Tilted Wave Laser Diodes,” Proc. SPIE 9733, 97330P (2016).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

N. N. Ledentsov and V. A. Shchukin, “Novel concepts for injection lasers,” SPIE Opt. Eng. 41(12), 3193–3203 (2002).
[Crossref]

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, “Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces,” Phys. Rev. Lett. 67(27), 3812–3815 (1991).
[Crossref] [PubMed]

Litvinov, D.

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Livshits, D. A.

K. A. Fedorova, G. S. Sokolovskii, D. I. Nikitichev, P. R. Battle, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange-to-red tunable picosecond pulses by frequency doubling in a diode-pumped PPKTP waveguide,” Opt. Lett. 38(15), 2835–2837 (2013).
[Crossref] [PubMed]

K. A. Fedorova, M. A. Cataluna, P. R. Battle, C. M. Kaleva, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange light generation from a PPKTP waveguide end pumped by a cw quantum–dot tunable laser diode,” Appl. Phys. B 103(1), 41–43 (2011).
[Crossref]

Lu, Sh.

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

Lyytikäinen, J.

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

Majid, M. A.

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

Maximov, M. V.

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, and N. A. Cherkashin, “(In,Ga,Al)P–GaP laser diodes grown on high–index GaAs surfaces emitting in the green, yellow and bright red spectral range,” Semicond. Sci. Technol. 32(2), 025016 (2017).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, M. V. Maximov, N. Yu. Gordeev, N. A. Kaluzhniy, S. A. Mintairov, A. S. Payusov, and Yu. M. Shernyakov, “Optical Mode Engineering and High Power Density per Facet Length (>8.4 kW/cm2) in Tilted Wave Laser Diodes,” Proc. SPIE 9733, 97330P (2016).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

Minagawa, S.

T. Tanaka, H. Yanagisawa, M. Takimoto, and S. Minagawa, “Tensile–strained AlGaInP single quantum well LDs emitting at 615 nm,” Electron. Lett. 29(21), 1864–1866 (1993).
[Crossref]

Mintairov, S. A.

N. N. Ledentsov, V. A. Shchukin, M. V. Maximov, N. Yu. Gordeev, N. A. Kaluzhniy, S. A. Mintairov, A. S. Payusov, and Yu. M. Shernyakov, “Optical Mode Engineering and High Power Density per Facet Length (>8.4 kW/cm2) in Tilted Wave Laser Diodes,” Proc. SPIE 9733, 97330P (2016).
[Crossref]

Mori, Y.

M. Ikeda, M. Honda, Y. Mori, K. Kaneko, and N. Watanabe, “Yellow–emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition,” Appl. Phys. Lett. 45(9), 964–965 (1984).
[Crossref]

Nam, D. W.

M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford, “Short–wavelength (≤6400 Å) room‐temperature continuous operation of p–n In0.5(AlxGa1−x)0.5P quantum well lasers,” Appl. Phys. Lett. 53(19), 1826–1828 (1988).
[Crossref]

Neff, J. G.

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, and R. D. Dupuis, “Growth of high–quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition,” J. Cryst. Growth 145(1–4), 179–186 (1994).
[Crossref]

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

Ng, T. Kh.

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

Nikitichev, D. I.

Ning, J.

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

Nippert, F.

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

Nötzel, R.

R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, “Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces,” Phys. Rev. Lett. 67(27), 3812–3815 (1991).
[Crossref] [PubMed]

Nouri, K.

S. Choudhary, K. Nouri, and M. L. Elsaie, “Photodynamic therapy in dermatology: a review,” Lasers Med. Sci. 24(6), 971–980 (2009).
[Crossref] [PubMed]

Novikov, I. I.

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

Okhotnikov, O.

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

Ooi, B. S.

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

Osentowski, T. D.

M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford, “Short–wavelength (≤6400 Å) room‐temperature continuous operation of p–n In0.5(AlxGa1−x)0.5P quantum well lasers,” Appl. Phys. Lett. 53(19), 1826–1828 (1988).
[Crossref]

Oubei, H. M.

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

Pam, N.

P. Avci, A. Gupta, M. Sadasivam, D. Vecchio, Z. Pam, N. Pam, and M. R. Hamblin, “Low-level laser (light) therapy (LLLT) in skin: stimulating, healing, restoring,” Semin. Cutan. Med. Surg. 32(1), 41–52 (2013).
[PubMed]

Pam, Z.

P. Avci, A. Gupta, M. Sadasivam, D. Vecchio, Z. Pam, N. Pam, and M. R. Hamblin, “Low-level laser (light) therapy (LLLT) in skin: stimulating, healing, restoring,” Semin. Cutan. Med. Surg. 32(1), 41–52 (2013).
[PubMed]

Payusov, A. S.

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, and N. A. Cherkashin, “(In,Ga,Al)P–GaP laser diodes grown on high–index GaAs surfaces emitting in the green, yellow and bright red spectral range,” Semicond. Sci. Technol. 32(2), 025016 (2017).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, M. V. Maximov, N. Yu. Gordeev, N. A. Kaluzhniy, S. A. Mintairov, A. S. Payusov, and Yu. M. Shernyakov, “Optical Mode Engineering and High Power Density per Facet Length (>8.4 kW/cm2) in Tilted Wave Laser Diodes,” Proc. SPIE 9733, 97330P (2016).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

Ploog, K.

R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, “Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces,” Phys. Rev. Lett. 67(27), 3812–3815 (1991).
[Crossref] [PubMed]

Pohl, U. W.

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Preobrazhenskii, V. V.

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Chaldyshev, “Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy,” Appl. Phys. Lett. 102(17), 173115 (2013).
[Crossref]

Putyato, M. A.

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Chaldyshev, “Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy,” Appl. Phys. Lett. 102(17), 173115 (2013).
[Crossref]

Rafailov, E. U.

K. A. Fedorova, G. S. Sokolovskii, D. I. Nikitichev, P. R. Battle, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange-to-red tunable picosecond pulses by frequency doubling in a diode-pumped PPKTP waveguide,” Opt. Lett. 38(15), 2835–2837 (2013).
[Crossref] [PubMed]

K. A. Fedorova, M. A. Cataluna, P. R. Battle, C. M. Kaleva, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange light generation from a PPKTP waveguide end pumped by a cw quantum–dot tunable laser diode,” Appl. Phys. B 103(1), 41–43 (2011).
[Crossref]

Reboh, S.

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Chaldyshev, “Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy,” Appl. Phys. Lett. 102(17), 173115 (2013).
[Crossref]

Richard, T. A.

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

Rosenauer, A.

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Sadasivam, M.

P. Avci, A. Gupta, M. Sadasivam, D. Vecchio, Z. Pam, N. Pam, and M. R. Hamblin, “Low-level laser (light) therapy (LLLT) in skin: stimulating, healing, restoring,” Semin. Cutan. Med. Surg. 32(1), 41–52 (2013).
[PubMed]

Schlichting, S.

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

Semyagin, B. R.

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Chaldyshev, “Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy,” Appl. Phys. Lett. 102(17), 173115 (2013).
[Crossref]

Shchukin, V. A.

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, and N. A. Cherkashin, “(In,Ga,Al)P–GaP laser diodes grown on high–index GaAs surfaces emitting in the green, yellow and bright red spectral range,” Semicond. Sci. Technol. 32(2), 025016 (2017).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, M. V. Maximov, N. Yu. Gordeev, N. A. Kaluzhniy, S. A. Mintairov, A. S. Payusov, and Yu. M. Shernyakov, “Optical Mode Engineering and High Power Density per Facet Length (>8.4 kW/cm2) in Tilted Wave Laser Diodes,” Proc. SPIE 9733, 97330P (2016).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

N. N. Ledentsov and V. A. Shchukin, “Novel concepts for injection lasers,” SPIE Opt. Eng. 41(12), 3193–3203 (2002).
[Crossref]

Shehata, M.

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

Shernyakov, Yu. M.

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, and N. A. Cherkashin, “(In,Ga,Al)P–GaP laser diodes grown on high–index GaAs surfaces emitting in the green, yellow and bright red spectral range,” Semicond. Sci. Technol. 32(2), 025016 (2017).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, M. V. Maximov, N. Yu. Gordeev, N. A. Kaluzhniy, S. A. Mintairov, A. S. Payusov, and Yu. M. Shernyakov, “Optical Mode Engineering and High Power Density per Facet Length (>8.4 kW/cm2) in Tilted Wave Laser Diodes,” Proc. SPIE 9733, 97330P (2016).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

Shono, M.

H. Hamada, K. Tominaga, M. Shono, S. Honda, K. Yodoshi, and T. Yamaguchi, “Room temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier,” Electron. Lett. 28, 1834–1836 (1992).

Sokolovskii, G. S.

Strassburg, M.

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Su, Zh.

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

Takimoto, M.

T. Tanaka, H. Yanagisawa, M. Takimoto, and S. Minagawa, “Tensile–strained AlGaInP single quantum well LDs emitting at 615 nm,” Electron. Lett. 29(21), 1864–1866 (1993).
[Crossref]

Tanaka, H.

H. Tanaka, Yu. Kawamura, and H. Asahi, “Refractive indices of In0.49Ga0.51–xAlxP lattice matched to GaAs,” J. Appl. Phys. 59(3), 985–986 (1986).
[Crossref]

Tanaka, T.

T. Tanaka, H. Yanagisawa, M. Takimoto, and S. Minagawa, “Tensile–strained AlGaInP single quantum well LDs emitting at 615 nm,” Electron. Lett. 29(21), 1864–1866 (1993).
[Crossref]

Telford, W. G.

W. G. Telford, “Lasers in flow cytometry,” Methods Cell Biol. 102, 375–409 (2011).
[Crossref] [PubMed]

Tiwari, S.

S. Tiwari and D. J. Frank, “Empirical fit to band discontinuities and barrier heights in III–V alloy systems,” Appl. Phys. Lett. 60(5), 630–632 (1992).
[Crossref]

Tominaga, K.

H. Hamada, K. Tominaga, M. Shono, S. Honda, K. Yodoshi, and T. Yamaguchi, “Room temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier,” Electron. Lett. 28, 1834–1836 (1992).

Treat, D. W.

P. D. Bour, D. W. Treat, K. J. Beernink, B. S. Krusor, R. S. Geels, and D. F. Welch, “610–nm band AlGaInP single quantum well laser diode,” IEEE Photonics Technol. Lett. 6(2), 128–131 (1994).

Van de Walle, Ch. G.

Ch. G. Van de Walle, “Band lineups and deformation potentials in the model-solid theory,” Phys. Rev. B Condens. Matter 39(3), 1871–1883 (1989).
[Crossref] [PubMed]

Vecchio, D.

P. Avci, A. Gupta, M. Sadasivam, D. Vecchio, Z. Pam, N. Pam, and M. R. Hamblin, “Low-level laser (light) therapy (LLLT) in skin: stimulating, healing, restoring,” Semin. Cutan. Med. Surg. 32(1), 41–52 (2013).
[PubMed]

Wang, R.

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

Watanabe, N.

M. Ikeda, M. Honda, Y. Mori, K. Kaneko, and N. Watanabe, “Yellow–emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition,” Appl. Phys. Lett. 45(9), 964–965 (1984).
[Crossref]

Welch, D. F.

P. D. Bour, D. W. Treat, K. J. Beernink, B. S. Krusor, R. S. Geels, and D. F. Welch, “610–nm band AlGaInP single quantum well laser diode,” IEEE Photonics Technol. Lett. 6(2), 128–131 (1994).

Wright, P. D.

W. R. Hitchens, N. Holonyak, P. D. Wright, and J. J. Coleman, “Low–threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′ yellow double–heterojunction laser diodes (J<104 A/cm2, λ~5850 Å, 77°K),” Appl. Phys. Lett. 27(4), 245–247 (1975).
[Crossref]

Xing, Zh.

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

Xu, Sh.

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

Yamaguchi, T.

H. Hamada, K. Tominaga, M. Shono, S. Honda, K. Yodoshi, and T. Yamaguchi, “Room temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier,” Electron. Lett. 28, 1834–1836 (1992).

Yanagisawa, H.

T. Tanaka, H. Yanagisawa, M. Takimoto, and S. Minagawa, “Tensile–strained AlGaInP single quantum well LDs emitting at 615 nm,” Electron. Lett. 29(21), 1864–1866 (1993).
[Crossref]

Yang, H.

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

Yodoshi, K.

H. Hamada, K. Tominaga, M. Shono, S. Honda, K. Yodoshi, and T. Yamaguchi, “Room temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier,” Electron. Lett. 28, 1834–1836 (1992).

Appl. Phys. B (1)

K. A. Fedorova, M. A. Cataluna, P. R. Battle, C. M. Kaleva, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Orange light generation from a PPKTP waveguide end pumped by a cw quantum–dot tunable laser diode,” Appl. Phys. B 103(1), 41–43 (2011).
[Crossref]

Appl. Phys. Lett. (7)

M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford, “Short–wavelength (≤6400 Å) room‐temperature continuous operation of p–n In0.5(AlxGa1−x)0.5P quantum well lasers,” Appl. Phys. Lett. 53(19), 1826–1828 (1988).
[Crossref]

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh, “Short–wavelength room–temperature continuous–wave laser operation of InAlP–InGaP superlattices grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 65(7), 854–856 (1994).
[Crossref]

W. R. Hitchens, N. Holonyak, P. D. Wright, and J. J. Coleman, “Low–threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′ yellow double–heterojunction laser diodes (J<104 A/cm2, λ~5850 Å, 77°K),” Appl. Phys. Lett. 27(4), 245–247 (1975).
[Crossref]

M. Ikeda, M. Honda, Y. Mori, K. Kaneko, and N. Watanabe, “Yellow–emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition,” Appl. Phys. Lett. 45(9), 964–965 (1984).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP light– emitting diodes grown on high–index GaAs surfaces,” Appl. Phys. Lett. 105(18), 181902 (2014).
[Crossref]

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Chaldyshev, “Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy,” Appl. Phys. Lett. 102(17), 173115 (2013).
[Crossref]

S. Tiwari and D. J. Frank, “Empirical fit to band discontinuities and barrier heights in III–V alloy systems,” Appl. Phys. Lett. 60(5), 630–632 (1992).
[Crossref]

Electron. Lett. (2)

H. Hamada, K. Tominaga, M. Shono, S. Honda, K. Yodoshi, and T. Yamaguchi, “Room temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier,” Electron. Lett. 28, 1834–1836 (1992).

T. Tanaka, H. Yanagisawa, M. Takimoto, and S. Minagawa, “Tensile–strained AlGaInP single quantum well LDs emitting at 615 nm,” Electron. Lett. 29(21), 1864–1866 (1993).
[Crossref]

Front. Optoelectron. (1)

Zh. Deng, J. Ning, R. Wang, Zh. Su, Sh. Xu, Zh. Xing, Sh. Lu, J. Dong, and H. Yang, “Influence of temperature and reverse bias on photocurrent spectrum and supra–bandgap spectral response of monolithic GaInP/GaAs double–junction solar cell,” Front. Optoelectron. 9(2), 306–311 (2016).
[Crossref]

IEEE J. Quantum Electron. (1)

M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, “High–Performance 640–nm–Range GaInP–AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal with Narrow Vertical Beam Divergence,” IEEE J. Quantum Electron. 41(11), 1341–1348 (2005).
[Crossref]

IEEE Photonics Technol. Lett. (1)

P. D. Bour, D. W. Treat, K. J. Beernink, B. S. Krusor, R. S. Geels, and D. F. Welch, “610–nm band AlGaInP single quantum well laser diode,” IEEE Photonics Technol. Lett. 6(2), 128–131 (1994).

J. Appl. Phys. (1)

H. Tanaka, Yu. Kawamura, and H. Asahi, “Refractive indices of In0.49Ga0.51–xAlxP lattice matched to GaAs,” J. Appl. Phys. 59(3), 985–986 (1986).
[Crossref]

J. Cryst. Growth (1)

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, and R. D. Dupuis, “Growth of high–quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition,” J. Cryst. Growth 145(1–4), 179–186 (1994).
[Crossref]

Lasers Med. Sci. (1)

S. Choudhary, K. Nouri, and M. L. Elsaie, “Photodynamic therapy in dermatology: a review,” Lasers Med. Sci. 24(6), 971–980 (2009).
[Crossref] [PubMed]

Materials (Basel) (1)

H. Hamada, “Characterization of gallium indium phosphide and progress of aluminum gallium indium phosphide system quantum–well laser diode,” Materials (Basel) 10(8), 875 (2017).
[Crossref] [PubMed]

Methods Cell Biol. (1)

W. G. Telford, “Lasers in flow cytometry,” Methods Cell Biol. 102, 375–409 (2011).
[Crossref] [PubMed]

Opt. Lett. (1)

Phys. Rev. B (1)

I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, “Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots,” Phys. Rev. B 60(12), 8695–8703 (1999).
[Crossref]

Phys. Rev. B Condens. Matter (1)

Ch. G. Van de Walle, “Band lineups and deformation potentials in the model-solid theory,” Phys. Rev. B Condens. Matter 39(3), 1871–1883 (1989).
[Crossref] [PubMed]

Phys. Rev. Lett. (1)

R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, “Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces,” Phys. Rev. Lett. 67(27), 3812–3815 (1991).
[Crossref] [PubMed]

Proc. SPIE (3)

M. A. Majid, A. A. Al-Jabr, R. T. Elafandy, H. M. Oubei, M. S. Alias, B. A. Alnahhas, D. H. Anjum, T. Kh. Ng, M. Shehata, and B. S. Ooi, “First demonstration of orange–yellow light emitter devices in InGaP/InAlGaP laser structure using strain–induced quantum well intermixing technique,” Proc. SPIE 9767, 97670A (2016).

N. N. Ledentsov, V. A. Shchukin, M. V. Maximov, N. Yu. Gordeev, N. A. Kaluzhniy, S. A. Mintairov, A. S. Payusov, and Yu. M. Shernyakov, “Optical Mode Engineering and High Power Density per Facet Length (>8.4 kW/cm2) in Tilted Wave Laser Diodes,” Proc. SPIE 9733, 97330P (2016).
[Crossref]

N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann, “Green (In,Ga,Al)P–GaP Light–Emitting Diodes grown in high–index GaAs surfaces,” Proc. SPIE 9383, 93830E (2015).
[Crossref]

Sci. Rep. (1)

N. Cherkashin, T. Denneulin, and M. J. Hÿtch, “Electron microscopy by specimen design: application to strain measurements,” Sci. Rep. 7(1), 12394 (2017).
[Crossref] [PubMed]

Semicond. Sci. Technol. (1)

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, and N. A. Cherkashin, “(In,Ga,Al)P–GaP laser diodes grown on high–index GaAs surfaces emitting in the green, yellow and bright red spectral range,” Semicond. Sci. Technol. 32(2), 025016 (2017).
[Crossref]

Semin. Cutan. Med. Surg. (1)

P. Avci, A. Gupta, M. Sadasivam, D. Vecchio, Z. Pam, N. Pam, and M. R. Hamblin, “Low-level laser (light) therapy (LLLT) in skin: stimulating, healing, restoring,” Semin. Cutan. Med. Surg. 32(1), 41–52 (2013).
[PubMed]

SPIE Opt. Eng. (1)

N. N. Ledentsov and V. A. Shchukin, “Novel concepts for injection lasers,” SPIE Opt. Eng. 41(12), 3193–3203 (2002).
[Crossref]

Other (7)

J. A. Lott and K. J. Malloy, “Orange vertical cavity surface emitting lasers,” in CLEO/Pacific Rim '95, Pacific Rim Conference on Lasers and Electro–Optics (OSA, 1995), pp. 258–259.
[Crossref]

H. Jorke and M. Fritz, “Stereo Projection Using Interference Filters,” Proceedings of SPIE–IS&T Electronic Imaging, SPIE Vol. 6055, 60550G (2006).

D. Bohn, “Intel made smart glasses that look normal,” The Verge 2, Feb. 5 (2018), https://www.theverge.com/2018/2/5/16966530/intel-vaunt-smart-glasses-announced-ar-video

N. Ledentsov and V. Shchukin, “Laser system for generation of colored three–dimensional images,” US Patent Application Publication US20170332071A1 (2017).

M. Mueller, “Introduction to Confocal Fluorescence Microscopy, Tutorial Texts in Optical Engineering,” SPIE Proceedings, Vol. TT69 (2006).

X. A. Valster, M. N. Finke, M. J. B. Boermans, J. M. M. V. D. Heijden, C. J. G. R. Spreuwenberg, and C. T. H. F. Liedenbaum, “Green (555 nm) Continuous Wave Lasing Emission (77 K) of GaInP/AlGaInP Multiple Quantum Well Laser Diodes,” 12th Int. Semiconductor Laser Conf. (Davos, Switzerland), Post–deadline paper vol. PD–12, p. 25 (1990).

W. J. Choi and P. D. Dapkus, “Low threshold 630 nm band AlGaInP diode laser with AlAs native oxide current aperture,” IEEE LEOS Annual Meeting Conference Proceedings 2, 533–534 (1999).
[Crossref]

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Figures (7)

Fig. 1
Fig. 1 (a), (b) Out–of–plane εzz and (c), (d) in–plane εxx strain distributions in four nominally 2 nm–thick Ga0.6Al0.15In0.25P barrier insertions in the structure grown on (112) GaAs substrate. Strain was extracted by dark–field electron holography in high–resolution mode with respect to Ga0.21Al0.30In0.49P lattice with a 1 nm (a), (b) and 2 nm (c), (d) spatial resolution in two orthogonal cross–sections: (a), (c) (1–10); (b), (d) (11–1). Note column–like εxx strain variation in both cross–sections.

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Fig. 2
Fig. 2 (a) Out–of–plane εzz and (c) in–plane εxx strain distributions in the gain medium of the (112) structure which contains four tensile strained nominally 4–nm thick In0.4Ga0.6P layers. Strain was extracted with respect to Ga0.21Al0.30In0.49P lattice with a 4–nm spatial resolution by applying moiré by specimen design technique in cross–section (1–10). (b) Out–of–plane εzz and (d) in–plane εxx strain distributions obtained by finite element method modelling. Note column–like εxx strain variation both in (c) and (d).

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Fig. 3
Fig. 3 Room temperature electroluminescence (EL) spectra at different drive currents for laser diodes grown on (a) (211) substrate and (b) (322) substrate.

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Fig. 4
Fig. 4 Room–temperature vertical (a) and lateral (b) far field pattern of the (211)–grown laser.

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Fig. 5
Fig. 5 Light–current characteristics of laser diodes grown on (322) and (211) substrates. (322) structure was not explored at power levels close to catastrophic optical mirror damage (COMD).

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Fig. 6
Fig. 6 EL spectrum of (211) laser at different current densities. A strong superlinear growth of the intensity is observed at current densities above 400 A/cm2. The band of stimulated emission and lasing is Stokes–shifted from the bandgap feature resolved at low excitation densities. The insert shows the deconvoluted EL spectrum at 40 A/cm2 in linear scale revealing a bandedge emission with the maximum at 603.5 nm (dashed line) and emission at a shorter wavelength with the maximum at 594 nm (dash–dotted line). Lasing spectrum is not to scale.

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Fig. 7
Fig. 7 Temperature dependence of (a) the photon energy of the emitted light for the bandedge EL and of the bandgap energy and (b) of the threshold current density for laser diode grown on (211) substrate.

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