Abstract

High-quality InxGa1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (−201)-oriented β-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (−201)-oriented β-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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2018 (1)

X. Wang, J. Yang, D. Zhao, D. Jiang, Z. Liu, W. Liu, F. Liang, S. Liu, Y. Xing, W. Wang, and M. Li, “Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells,” Mater. Res. Express 5(2), 025906 (2018).
[Crossref]

2017 (1)

M. M. Muhammed, N. Alwadai, S. Lopatin, A. Kuramata, and I. S. Roqan, “High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate,” ACS Appl. Mater. Interfaces 9(39), 34057–34063 (2017).
[Crossref] [PubMed]

2016 (2)

Y. C. Yao, J. M. Hwang, Z. P. Yang, J. Y. Haung, C. C. Lin, W. C. Shen, C. Y. Chou, M. T. Wang, C. Y. Huang, C. Y. Chen, M. T. Tsai, T. N. Lin, J. L. Shen, and Y. J. Lee, “Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons,” Sci. Rep. 6(1), 22659 (2016).
[Crossref] [PubMed]

M. M. Muhammed, M. A. Roldan, Y. Yamashita, S. L. Sahonta, I. A. Ajia, K. Iizuka, A. Kuramata, C. J. Humphreys, and I. S. Roqan, “High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer,” Sci. Rep. 6(1), 29747 (2016).
[Crossref] [PubMed]

2015 (2)

2014 (2)

E. G. Víllora, S. Arjoca, K. Shimamura, D. Inomata, and K. Aoki, “β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs & LDs, and β-Ga2O3 potential for next generation of power devices,” Proc. SPIE 8987, 89871U (2014).
[Crossref]

M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, and I. S. Roqan, “High optical and structural quality of GaN epilayers grown on (−201) β-Ga2O3,” Appl. Phys. Lett. 105(4), 042112 (2014).
[Crossref]

2012 (1)

S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Growth of GaN and AlGaN on (100) β-Ga2O3 substrates,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3–4), 519–522 (2012).
[Crossref]

2011 (1)

G. Sun, G. Xu, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

2010 (1)

H. Kim, D.-S. Shin, H.-Y. Ryu, and J.-I. Shim, “Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation,” Jpn. J. Appl. Phys. 49(1111R), 112402 (2010).
[Crossref]

2008 (2)

J. Abell and T. D. Moustakas, “The role of dislocations as nonradiative recombination centers in InGaN quantum wells,” Appl. Phys. Lett. 92(9), 091901 (2008).
[Crossref]

H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, and Y. Yaguchi, “Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method,” Jpn. J. Appl. Phys. 47(11), 8506–8509 (2008).
[Crossref]

2007 (4)

E. G. Víllora, K. Shimamura, K. Kitamura, K. Aoki, and T. Ujiie, “Epitaxial relationship between wurtzite GaN and β-Ga2O3,” Appl. Phys. Lett. 90(23), 234102 (2007).
[Crossref]

H. Kim, K. K. Kim, K. K. Choi, H. Kim, J. O. Song, J. Cho, K. H. Baik, C. Sone, Y. Park, and S. Y. Seong, “Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry,” Appl. Phys. Lett. 91(2), 023510 (2007).
[Crossref]

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

2006 (2)

E. Schmitt, T. Straubinger, M. Rasp, and A.-D. Weber, “Defect reduction in sublimation grown SiC bulk crystals,” Superlattices Microstruct. 40(4–6), 320–327 (2006).
[Crossref]

A. Dadgar, C. Hums, A. Diez, J. Bläsing, and A. Krost, “Growth of blue GaN LED structures on 150-mm Si(111),” J. Cryst. Growth 297(2), 279–282 (2006).
[Crossref]

2005 (1)

K. Shimamura, E. G. Víllora, K. Domen, K. Yui, K. Aoki, and N. Ichinose, “Epitaxial Growth of GaN on (100) β-Ga2O3 Substrates by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 44(1), L7–L8 (2005).
[Crossref]

2003 (2)

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, and C. F. Yang, “InGaN/GaN MQW high brightness LED grown by MOCVD,” Opt. Mater. 23(1–2), 183–186 (2003).
[Crossref]

S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

2002 (1)

S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, Y. S. Lin, C. Hsu, K. J. Ma, and J. I. Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” J. Appl. Phys. 92(8), 4441–4448 (2002).
[Crossref]

2001 (2)

S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura, “Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells,” Appl. Phys. Lett. 79(26), 4319–4321 (2001).
[Crossref]

X. Guo and E. F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
[Crossref]

2000 (2)

G. Pozina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, and I. Akasaki, “Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 88(5), 2677–2681 (2000).
[Crossref]

C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, “Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells,” Phys. Rev. B 62(20), R13302 (2000).
[Crossref]

1999 (3)

I. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, Y. Shapira, U. Tisch, and J. Salzman, “Yellow luminescence and related deep levels in unintentionally doped GaN films,” Phys. Rev. B 59(15), 9748–9751 (1999).
[Crossref]

I. Eliashevich, Y. Li, A. Osinsky, C. A. Tran, M. G. Brown, and R. F. Karlicek., “InGaN blue light-emitting diodes with optimized n-GaN layer,” Proc. SPIE 3621, 28–36 (1999).
[Crossref]

B. Monemar, “III-V nitrides—important future electronic materials,” J. Mater. Sci. Mater. Electron. 10(4), 227–254 (1999).
[Crossref]

1998 (3)

Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]

O. Brandt, J. Ringling, K. H. Ploog, H.-J. Wünsche, and F. Henneberger, “Temperature dependence of the radiative lifetime in GaN,” Phys. Rev. B 58(24), R15977 (1998).
[Crossref]

1997 (2)

S. A. Safvi, N. R. Perkins, M. N. Horton, R. Matyi, and T. F. Kuech, “Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN sapphire grown by hydride vapor-phase epitaxy,” J. Cryst. Growth 182(3–4), 233–240 (1997).
[Crossref]

K. P. O’Donnell, T. Breitkopf, H. Kalt, W. Van der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, “Optical linewidths of InGaN light emitting diodes and epilayers,” Appl. Phys. Lett. 70(14), 1843–1845 (1997).
[Crossref]

1996 (1)

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[Crossref]

Abare, A. C.

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]

Abell, J.

J. Abell and T. D. Moustakas, “The role of dislocations as nonradiative recombination centers in InGaN quantum wells,” Appl. Phys. Lett. 92(9), 091901 (2008).
[Crossref]

Aida, H.

H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, and Y. Yaguchi, “Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method,” Jpn. J. Appl. Phys. 47(11), 8506–8509 (2008).
[Crossref]

Ajia, I. A.

M. M. Muhammed, M. A. Roldan, Y. Yamashita, S. L. Sahonta, I. A. Ajia, K. Iizuka, A. Kuramata, C. J. Humphreys, and I. S. Roqan, “High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer,” Sci. Rep. 6(1), 29747 (2016).
[Crossref] [PubMed]

Akasaki, I.

S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Growth of GaN and AlGaN on (100) β-Ga2O3 substrates,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3–4), 519–522 (2012).
[Crossref]

C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, “Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells,” Phys. Rev. B 62(20), R13302 (2000).
[Crossref]

G. Pozina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, and I. Akasaki, “Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 88(5), 2677–2681 (2000).
[Crossref]

Alwadai, N.

M. M. Muhammed, N. Alwadai, S. Lopatin, A. Kuramata, and I. S. Roqan, “High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate,” ACS Appl. Mater. Interfaces 9(39), 34057–34063 (2017).
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Amano, H.

S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Growth of GaN and AlGaN on (100) β-Ga2O3 substrates,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3–4), 519–522 (2012).
[Crossref]

G. Pozina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, and I. Akasaki, “Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 88(5), 2677–2681 (2000).
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C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, “Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells,” Phys. Rev. B 62(20), R13302 (2000).
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Aoki, K.

E. G. Víllora, S. Arjoca, K. Shimamura, D. Inomata, and K. Aoki, “β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs & LDs, and β-Ga2O3 potential for next generation of power devices,” Proc. SPIE 8987, 89871U (2014).
[Crossref]

E. G. Víllora, K. Shimamura, K. Kitamura, K. Aoki, and T. Ujiie, “Epitaxial relationship between wurtzite GaN and β-Ga2O3,” Appl. Phys. Lett. 90(23), 234102 (2007).
[Crossref]

K. Shimamura, E. G. Víllora, K. Domen, K. Yui, K. Aoki, and N. Ichinose, “Epitaxial Growth of GaN on (100) β-Ga2O3 Substrates by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 44(1), L7–L8 (2005).
[Crossref]

Aoshima, H.

S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Growth of GaN and AlGaN on (100) β-Ga2O3 substrates,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3–4), 519–522 (2012).
[Crossref]

Aota, N.

H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, and Y. Yaguchi, “Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method,” Jpn. J. Appl. Phys. 47(11), 8506–8509 (2008).
[Crossref]

Arjoca, S.

E. G. Víllora, S. Arjoca, K. Shimamura, D. Inomata, and K. Aoki, “β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs & LDs, and β-Ga2O3 potential for next generation of power devices,” Proc. SPIE 8987, 89871U (2014).
[Crossref]

Azuhata, T.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[Crossref]

Baik, K. H.

H. Kim, K. K. Kim, K. K. Choi, H. Kim, J. O. Song, J. Cho, K. H. Baik, C. Sone, Y. Park, and S. Y. Seong, “Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry,” Appl. Phys. Lett. 91(2), 023510 (2007).
[Crossref]

Bergman, J. P.

G. Pozina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, and I. Akasaki, “Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 88(5), 2677–2681 (2000).
[Crossref]

Bläsing, J.

A. Dadgar, C. Hums, A. Diez, J. Bläsing, and A. Krost, “Growth of blue GaN LED structures on 150-mm Si(111),” J. Cryst. Growth 297(2), 279–282 (2006).
[Crossref]

Bowers, J. E.

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]

Brandt, O.

O. Brandt, J. Ringling, K. H. Ploog, H.-J. Wünsche, and F. Henneberger, “Temperature dependence of the radiative lifetime in GaN,” Phys. Rev. B 58(24), R15977 (1998).
[Crossref]

Breitkopf, T.

K. P. O’Donnell, T. Breitkopf, H. Kalt, W. Van der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, “Optical linewidths of InGaN light emitting diodes and epilayers,” Appl. Phys. Lett. 70(14), 1843–1845 (1997).
[Crossref]

Brown, M. G.

I. Eliashevich, Y. Li, A. Osinsky, C. A. Tran, M. G. Brown, and R. F. Karlicek., “InGaN blue light-emitting diodes with optimized n-GaN layer,” Proc. SPIE 3621, 28–36 (1999).
[Crossref]

Chen, C. Y.

Y. C. Yao, J. M. Hwang, Z. P. Yang, J. Y. Haung, C. C. Lin, W. C. Shen, C. Y. Chou, M. T. Wang, C. Y. Huang, C. Y. Chen, M. T. Tsai, T. N. Lin, J. L. Shen, and Y. J. Lee, “Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons,” Sci. Rep. 6(1), 22659 (2016).
[Crossref] [PubMed]

Chen, H.

T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, and H. Chen, “Temperature-dependent photoluminescence in light-emitting diodes,” Sci. Rep. 4(1), 6131 (2015).
[Crossref] [PubMed]

Chen, P.

Chen, Z. Z.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, and C. F. Yang, “InGaN/GaN MQW high brightness LED grown by MOCVD,” Opt. Mater. 23(1–2), 183–186 (2003).
[Crossref]

Cheng, Y. C.

S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, Y. S. Lin, C. Hsu, K. J. Ma, and J. I. Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” J. Appl. Phys. 92(8), 4441–4448 (2002).
[Crossref]

Chichibu, S.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[Crossref]

Chichibu, S. F.

S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura, “Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells,” Appl. Phys. Lett. 79(26), 4319–4321 (2001).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]

Cho, J.

H. Kim, K. K. Kim, K. K. Choi, H. Kim, J. O. Song, J. Cho, K. H. Baik, C. Sone, Y. Park, and S. Y. Seong, “Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry,” Appl. Phys. Lett. 91(2), 023510 (2007).
[Crossref]

Cho, Y. H.

Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998).
[Crossref]

Choi, K. K.

H. Kim, K. K. Kim, K. K. Choi, H. Kim, J. O. Song, J. Cho, K. H. Baik, C. Sone, Y. Park, and S. Y. Seong, “Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry,” Appl. Phys. Lett. 91(2), 023510 (2007).
[Crossref]

Chou, C. Y.

Y. C. Yao, J. M. Hwang, Z. P. Yang, J. Y. Haung, C. C. Lin, W. C. Shen, C. Y. Chou, M. T. Wang, C. Y. Huang, C. Y. Chen, M. T. Tsai, T. N. Lin, J. L. Shen, and Y. J. Lee, “Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons,” Sci. Rep. 6(1), 22659 (2016).
[Crossref] [PubMed]

Christen, J.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Chung, Y. Y.

S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, Y. S. Lin, C. Hsu, K. J. Ma, and J. I. Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” J. Appl. Phys. 92(8), 4441–4448 (2002).
[Crossref]

Chyi, J. I.

S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, Y. S. Lin, C. Hsu, K. J. Ma, and J. I. Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” J. Appl. Phys. 92(8), 4441–4448 (2002).
[Crossref]

Coldren, L. A.

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]

Craford, M. G.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Dadgar, A.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

A. Dadgar, C. Hums, A. Diez, J. Bläsing, and A. Krost, “Growth of blue GaN LED structures on 150-mm Si(111),” J. Cryst. Growth 297(2), 279–282 (2006).
[Crossref]

Dai, L.

T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, and H. Chen, “Temperature-dependent photoluminescence in light-emitting diodes,” Sci. Rep. 4(1), 6131 (2015).
[Crossref] [PubMed]

Demeester, P.

K. P. O’Donnell, T. Breitkopf, H. Kalt, W. Van der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, “Optical linewidths of InGaN light emitting diodes and epilayers,” Appl. Phys. Lett. 70(14), 1843–1845 (1997).
[Crossref]

DenBaars, S. P.

S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]

Diez, A.

A. Dadgar, C. Hums, A. Diez, J. Bläsing, and A. Krost, “Growth of blue GaN LED structures on 150-mm Si(111),” J. Cryst. Growth 297(2), 279–282 (2006).
[Crossref]

Ding, X. M.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, and C. F. Yang, “InGaN/GaN MQW high brightness LED grown by MOCVD,” Opt. Mater. 23(1–2), 183–186 (2003).
[Crossref]

Ding, Y. J.

G. Sun, G. Xu, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

Domen, K.

K. Shimamura, E. G. Víllora, K. Domen, K. Yui, K. Aoki, and N. Ichinose, “Epitaxial Growth of GaN on (100) β-Ga2O3 Substrates by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 44(1), L7–L8 (2005).
[Crossref]

Du, C.

T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, and H. Chen, “Temperature-dependent photoluminescence in light-emitting diodes,” Sci. Rep. 4(1), 6131 (2015).
[Crossref] [PubMed]

Du, G. T.

Eliashevich, I.

I. Eliashevich, Y. Li, A. Osinsky, C. A. Tran, M. G. Brown, and R. F. Karlicek., “InGaN blue light-emitting diodes with optimized n-GaN layer,” Proc. SPIE 3621, 28–36 (1999).
[Crossref]

Fang, Y.

T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, and H. Chen, “Temperature-dependent photoluminescence in light-emitting diodes,” Sci. Rep. 4(1), 6131 (2015).
[Crossref] [PubMed]

Feng, S. W.

S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, Y. S. Lin, C. Hsu, K. J. Ma, and J. I. Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” J. Appl. Phys. 92(8), 4441–4448 (2002).
[Crossref]

Finger, T.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Fischer, A. J.

Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998).
[Crossref]

Fleischer, S. B.

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]

Franco, N.

M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, and I. S. Roqan, “High optical and structural quality of GaN epilayers grown on (−201) β-Ga2O3,” Appl. Phys. Lett. 105(4), 042112 (2014).
[Crossref]

Gainer, G. H.

Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998).
[Crossref]

Gan, Z. Z.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, and C. F. Yang, “InGaN/GaN MQW high brightness LED grown by MOCVD,” Opt. Mater. 23(1–2), 183–186 (2003).
[Crossref]

Guo, X.

X. Guo and E. F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
[Crossref]

Harbers, G.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Haung, J. Y.

Y. C. Yao, J. M. Hwang, Z. P. Yang, J. Y. Haung, C. C. Lin, W. C. Shen, C. Y. Chou, M. T. Wang, C. Y. Huang, C. Y. Chen, M. T. Tsai, T. N. Lin, J. L. Shen, and Y. J. Lee, “Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons,” Sci. Rep. 6(1), 22659 (2016).
[Crossref] [PubMed]

Hempel, T.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Henneberger, F.

O. Brandt, J. Ringling, K. H. Ploog, H.-J. Wünsche, and F. Henneberger, “Temperature dependence of the radiative lifetime in GaN,” Phys. Rev. B 58(24), R15977 (1998).
[Crossref]

Hoffmann, A.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Horton, M. N.

S. A. Safvi, N. R. Perkins, M. N. Horton, R. Matyi, and T. F. Kuech, “Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN sapphire grown by hydride vapor-phase epitaxy,” J. Cryst. Growth 182(3–4), 233–240 (1997).
[Crossref]

Hsu, C.

S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, Y. S. Lin, C. Hsu, K. J. Ma, and J. I. Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” J. Appl. Phys. 92(8), 4441–4448 (2002).
[Crossref]

Hu, E.

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]

Hu, X. D.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, and C. F. Yang, “InGaN/GaN MQW high brightness LED grown by MOCVD,” Opt. Mater. 23(1–2), 183–186 (2003).
[Crossref]

Huang, C. Y.

Y. C. Yao, J. M. Hwang, Z. P. Yang, J. Y. Haung, C. C. Lin, W. C. Shen, C. Y. Chou, M. T. Wang, C. Y. Huang, C. Y. Chen, M. T. Tsai, T. N. Lin, J. L. Shen, and Y. J. Lee, “Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons,” Sci. Rep. 6(1), 22659 (2016).
[Crossref] [PubMed]

Humphreys, C. J.

M. M. Muhammed, M. A. Roldan, Y. Yamashita, S. L. Sahonta, I. A. Ajia, K. Iizuka, A. Kuramata, C. J. Humphreys, and I. S. Roqan, “High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer,” Sci. Rep. 6(1), 29747 (2016).
[Crossref] [PubMed]

Hums, C.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

A. Dadgar, C. Hums, A. Diez, J. Bläsing, and A. Krost, “Growth of blue GaN LED structures on 150-mm Si(111),” J. Cryst. Growth 297(2), 279–282 (2006).
[Crossref]

Hwang, J. M.

Y. C. Yao, J. M. Hwang, Z. P. Yang, J. Y. Haung, C. C. Lin, W. C. Shen, C. Y. Chou, M. T. Wang, C. Y. Huang, C. Y. Chen, M. T. Tsai, T. N. Lin, J. L. Shen, and Y. J. Lee, “Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons,” Sci. Rep. 6(1), 22659 (2016).
[Crossref] [PubMed]

Ichinose, N.

K. Shimamura, E. G. Víllora, K. Domen, K. Yui, K. Aoki, and N. Ichinose, “Epitaxial Growth of GaN on (100) β-Ga2O3 Substrates by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 44(1), L7–L8 (2005).
[Crossref]

Iizuka, K.

M. M. Muhammed, M. A. Roldan, Y. Yamashita, S. L. Sahonta, I. A. Ajia, K. Iizuka, A. Kuramata, C. J. Humphreys, and I. S. Roqan, “High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer,” Sci. Rep. 6(1), 29747 (2016).
[Crossref] [PubMed]

Inomata, D.

E. G. Víllora, S. Arjoca, K. Shimamura, D. Inomata, and K. Aoki, “β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs & LDs, and β-Ga2O3 potential for next generation of power devices,” Proc. SPIE 8987, 89871U (2014).
[Crossref]

Ishida, Y.

S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura, “Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells,” Appl. Phys. Lett. 79(26), 4319–4321 (2001).
[Crossref]

Ito, S.

S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Growth of GaN and AlGaN on (100) β-Ga2O3 substrates,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3–4), 519–522 (2012).
[Crossref]

Iwaya, M.

S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Growth of GaN and AlGaN on (100) β-Ga2O3 substrates,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3–4), 519–522 (2012).
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T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, and H. Chen, “Temperature-dependent photoluminescence in light-emitting diodes,” Sci. Rep. 4(1), 6131 (2015).
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X. Wang, J. Yang, D. Zhao, D. Jiang, Z. Liu, W. Liu, F. Liang, S. Liu, Y. Xing, W. Wang, and M. Li, “Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells,” Mater. Res. Express 5(2), 025906 (2018).
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Jiang, D. S.

Jiang, Y.

T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, and H. Chen, “Temperature-dependent photoluminescence in light-emitting diodes,” Sci. Rep. 4(1), 6131 (2015).
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Kalt, H.

K. P. O’Donnell, T. Breitkopf, H. Kalt, W. Van der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, “Optical linewidths of InGaN light emitting diodes and epilayers,” Appl. Phys. Lett. 70(14), 1843–1845 (1997).
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Kamiyama, S.

S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Growth of GaN and AlGaN on (100) β-Ga2O3 substrates,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3–4), 519–522 (2012).
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I. Eliashevich, Y. Li, A. Osinsky, C. A. Tran, M. G. Brown, and R. F. Karlicek., “InGaN blue light-emitting diodes with optimized n-GaN layer,” Proc. SPIE 3621, 28–36 (1999).
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S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]

Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998).
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H. Kim, D.-S. Shin, H.-Y. Ryu, and J.-I. Shim, “Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation,” Jpn. J. Appl. Phys. 49(1111R), 112402 (2010).
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H. Kim, K. K. Kim, K. K. Choi, H. Kim, J. O. Song, J. Cho, K. H. Baik, C. Sone, Y. Park, and S. Y. Seong, “Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry,” Appl. Phys. Lett. 91(2), 023510 (2007).
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H. Kim, K. K. Kim, K. K. Choi, H. Kim, J. O. Song, J. Cho, K. H. Baik, C. Sone, Y. Park, and S. Y. Seong, “Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry,” Appl. Phys. Lett. 91(2), 023510 (2007).
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H. Kim, K. K. Kim, K. K. Choi, H. Kim, J. O. Song, J. Cho, K. H. Baik, C. Sone, Y. Park, and S. Y. Seong, “Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry,” Appl. Phys. Lett. 91(2), 023510 (2007).
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S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura, “Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells,” Appl. Phys. Lett. 79(26), 4319–4321 (2001).
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M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
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S. A. Safvi, N. R. Perkins, M. N. Horton, R. Matyi, and T. F. Kuech, “Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN sapphire grown by hydride vapor-phase epitaxy,” J. Cryst. Growth 182(3–4), 233–240 (1997).
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Kuramata, A.

M. M. Muhammed, N. Alwadai, S. Lopatin, A. Kuramata, and I. S. Roqan, “High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate,” ACS Appl. Mater. Interfaces 9(39), 34057–34063 (2017).
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M. M. Muhammed, M. A. Roldan, Y. Yamashita, S. L. Sahonta, I. A. Ajia, K. Iizuka, A. Kuramata, C. J. Humphreys, and I. S. Roqan, “High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer,” Sci. Rep. 6(1), 29747 (2016).
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M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, and I. S. Roqan, “High optical and structural quality of GaN epilayers grown on (−201) β-Ga2O3,” Appl. Phys. Lett. 105(4), 042112 (2014).
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S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura, “Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells,” Appl. Phys. Lett. 79(26), 4319–4321 (2001).
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Y. C. Yao, J. M. Hwang, Z. P. Yang, J. Y. Haung, C. C. Lin, W. C. Shen, C. Y. Chou, M. T. Wang, C. Y. Huang, C. Y. Chen, M. T. Tsai, T. N. Lin, J. L. Shen, and Y. J. Lee, “Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons,” Sci. Rep. 6(1), 22659 (2016).
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X. Wang, J. Yang, D. Zhao, D. Jiang, Z. Liu, W. Liu, F. Liang, S. Liu, Y. Xing, W. Wang, and M. Li, “Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells,” Mater. Res. Express 5(2), 025906 (2018).
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Li, X.

Li, Y.

I. Eliashevich, Y. Li, A. Osinsky, C. A. Tran, M. G. Brown, and R. F. Karlicek., “InGaN blue light-emitting diodes with optimized n-GaN layer,” Proc. SPIE 3621, 28–36 (1999).
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G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, and C. F. Yang, “InGaN/GaN MQW high brightness LED grown by MOCVD,” Opt. Mater. 23(1–2), 183–186 (2003).
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Liang, F.

X. Wang, J. Yang, D. Zhao, D. Jiang, Z. Liu, W. Liu, F. Liang, S. Liu, Y. Xing, W. Wang, and M. Li, “Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells,” Mater. Res. Express 5(2), 025906 (2018).
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Y. C. Yao, J. M. Hwang, Z. P. Yang, J. Y. Haung, C. C. Lin, W. C. Shen, C. Y. Chou, M. T. Wang, C. Y. Huang, C. Y. Chen, M. T. Tsai, T. N. Lin, J. L. Shen, and Y. J. Lee, “Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons,” Sci. Rep. 6(1), 22659 (2016).
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Lin, T. N.

Y. C. Yao, J. M. Hwang, Z. P. Yang, J. Y. Haung, C. C. Lin, W. C. Shen, C. Y. Chou, M. T. Wang, C. Y. Huang, C. Y. Chen, M. T. Tsai, T. N. Lin, J. L. Shen, and Y. J. Lee, “Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons,” Sci. Rep. 6(1), 22659 (2016).
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Lin, Y. S.

S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, Y. S. Lin, C. Hsu, K. J. Ma, and J. I. Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” J. Appl. Phys. 92(8), 4441–4448 (2002).
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Liu, G.

G. Sun, G. Xu, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
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Liu, J. P.

Liu, S.

X. Wang, J. Yang, D. Zhao, D. Jiang, Z. Liu, W. Liu, F. Liang, S. Liu, Y. Xing, W. Wang, and M. Li, “Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells,” Mater. Res. Express 5(2), 025906 (2018).
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Liu, W.

X. Wang, J. Yang, D. Zhao, D. Jiang, Z. Liu, W. Liu, F. Liang, S. Liu, Y. Xing, W. Wang, and M. Li, “Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells,” Mater. Res. Express 5(2), 025906 (2018).
[Crossref]

T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, and H. Chen, “Temperature-dependent photoluminescence in light-emitting diodes,” Sci. Rep. 4(1), 6131 (2015).
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W. Liu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, M. Shi, D. M. Zhao, X. Li, J. P. Liu, S. M. Zhang, H. Wang, H. Yang, Y. T. Zhang, and G. T. Du, “Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,” Opt. Express 23(12), 15935–15943 (2015).
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Liu, Z.

X. Wang, J. Yang, D. Zhao, D. Jiang, Z. Liu, W. Liu, F. Liang, S. Liu, Y. Xing, W. Wang, and M. Li, “Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells,” Mater. Res. Express 5(2), 025906 (2018).
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Liu, Z. S.

Lopatin, S.

M. M. Muhammed, N. Alwadai, S. Lopatin, A. Kuramata, and I. S. Roqan, “High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate,” ACS Appl. Mater. Interfaces 9(39), 34057–34063 (2017).
[Crossref] [PubMed]

Lorenz, K.

M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, and I. S. Roqan, “High optical and structural quality of GaN epilayers grown on (−201) β-Ga2O3,” Appl. Phys. Lett. 105(4), 042112 (2014).
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Lu, M.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, and C. F. Yang, “InGaN/GaN MQW high brightness LED grown by MOCVD,” Opt. Mater. 23(1–2), 183–186 (2003).
[Crossref]

Lu, T.

T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, and H. Chen, “Temperature-dependent photoluminescence in light-emitting diodes,” Sci. Rep. 4(1), 6131 (2015).
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Ma, K. J.

S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, Y. S. Lin, C. Hsu, K. J. Ma, and J. I. Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” J. Appl. Phys. 92(8), 4441–4448 (2002).
[Crossref]

Ma, Z.

T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, and H. Chen, “Temperature-dependent photoluminescence in light-emitting diodes,” Sci. Rep. 4(1), 6131 (2015).
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Matyi, R.

S. A. Safvi, N. R. Perkins, M. N. Horton, R. Matyi, and T. F. Kuech, “Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN sapphire grown by hydride vapor-phase epitaxy,” J. Cryst. Growth 182(3–4), 233–240 (1997).
[Crossref]

Middleton, P. G.

K. P. O’Donnell, T. Breitkopf, H. Kalt, W. Van der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, “Optical linewidths of InGaN light emitting diodes and epilayers,” Appl. Phys. Lett. 70(14), 1843–1845 (1997).
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Minsky, M. S.

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
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Mishra, U. K.

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
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Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998).
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Moerman, I.

K. P. O’Donnell, T. Breitkopf, H. Kalt, W. Van der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, “Optical linewidths of InGaN light emitting diodes and epilayers,” Appl. Phys. Lett. 70(14), 1843–1845 (1997).
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Monemar, B.

G. Pozina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, and I. Akasaki, “Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 88(5), 2677–2681 (2000).
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Morishima, Y.

M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, and I. S. Roqan, “High optical and structural quality of GaN epilayers grown on (−201) β-Ga2O3,” Appl. Phys. Lett. 105(4), 042112 (2014).
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J. Abell and T. D. Moustakas, “The role of dislocations as nonradiative recombination centers in InGaN quantum wells,” Appl. Phys. Lett. 92(9), 091901 (2008).
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Mueller, G. O.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
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Mueller-Mach, R.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Muhammed, M. M.

M. M. Muhammed, N. Alwadai, S. Lopatin, A. Kuramata, and I. S. Roqan, “High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate,” ACS Appl. Mater. Interfaces 9(39), 34057–34063 (2017).
[Crossref] [PubMed]

M. M. Muhammed, M. A. Roldan, Y. Yamashita, S. L. Sahonta, I. A. Ajia, K. Iizuka, A. Kuramata, C. J. Humphreys, and I. S. Roqan, “High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer,” Sci. Rep. 6(1), 29747 (2016).
[Crossref] [PubMed]

M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, and I. S. Roqan, “High optical and structural quality of GaN epilayers grown on (−201) β-Ga2O3,” Appl. Phys. Lett. 105(4), 042112 (2014).
[Crossref]

Nagata, K.

S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Growth of GaN and AlGaN on (100) β-Ga2O3 substrates,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3–4), 519–522 (2012).
[Crossref]

Nakamura, S.

S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
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S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
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S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura, “Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells,” Appl. Phys. Lett. 79(26), 4319–4321 (2001).
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Nishiguchi, K.

H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, and Y. Yaguchi, “Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method,” Jpn. J. Appl. Phys. 47(11), 8506–8509 (2008).
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O’Donnell, K. P.

K. P. O’Donnell, T. Breitkopf, H. Kalt, W. Van der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, “Optical linewidths of InGaN light emitting diodes and epilayers,” Appl. Phys. Lett. 70(14), 1843–1845 (1997).
[Crossref]

Okumura, H.

S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura, “Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells,” Appl. Phys. Lett. 79(26), 4319–4321 (2001).
[Crossref]

Onuma, T.

S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura, “Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells,” Appl. Phys. Lett. 79(26), 4319–4321 (2001).
[Crossref]

Osinsky, A.

I. Eliashevich, Y. Li, A. Osinsky, C. A. Tran, M. G. Brown, and R. F. Karlicek., “InGaN blue light-emitting diodes with optimized n-GaN layer,” Proc. SPIE 3621, 28–36 (1999).
[Crossref]

Park, Y.

H. Kim, K. K. Kim, K. K. Choi, H. Kim, J. O. Song, J. Cho, K. H. Baik, C. Sone, Y. Park, and S. Y. Seong, “Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry,” Appl. Phys. Lett. 91(2), 023510 (2007).
[Crossref]

Peres, M.

M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, and I. S. Roqan, “High optical and structural quality of GaN epilayers grown on (−201) β-Ga2O3,” Appl. Phys. Lett. 105(4), 042112 (2014).
[Crossref]

Perkins, N. R.

S. A. Safvi, N. R. Perkins, M. N. Horton, R. Matyi, and T. F. Kuech, “Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN sapphire grown by hydride vapor-phase epitaxy,” J. Cryst. Growth 182(3–4), 233–240 (1997).
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Ploog, K. H.

O. Brandt, J. Ringling, K. H. Ploog, H.-J. Wünsche, and F. Henneberger, “Temperature dependence of the radiative lifetime in GaN,” Phys. Rev. B 58(24), R15977 (1998).
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Pozina, G.

G. Pozina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, and I. Akasaki, “Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 88(5), 2677–2681 (2000).
[Crossref]

Qin, Z. X.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, and C. F. Yang, “InGaN/GaN MQW high brightness LED grown by MOCVD,” Opt. Mater. 23(1–2), 183–186 (2003).
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M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
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M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
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Mater. Res. Express (1)

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Opt. Express (1)

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Figures (7)

Fig. 1
Fig. 1 HR-XRD patterns on InxGa1-xN/GaN MQW samples (a) for the (0002) reflection from the QWs with different x-values (0.05, 0.1 and 0.13). (b) SNMS depth profiling with x = 0.13 and x = 0.1.
Fig. 2
Fig. 2 (a) Cross-sectional STEM image of In0.13Ga0.87N/GaN MQW sample and (b) high resolution image with QW and QB dimensions.
Fig. 3
Fig. 3 A STEM cross-sectional image (a) at the interface between the β-Ga2O3 substrate and GaN epilayer, with electron diffraction patters at highlighted positions shown at the β-Ga2O3 substrate (bottom), interface (middle), and GaN epilayer (top) (beam stop is used to mask the central bright spot). (b) The zoomed image of the TD annihilation.
Fig. 4
Fig. 4 Normalized PL spectra of the samples at (a) 10 K and (b) RT obtained through 325 nm CW laser excitation. (c) A comparison of the PL intensity for similar In0.05Ga0.95N/GaN MQW structures grown on β-Ga2O3 and sapphire substrates.
Fig. 5
Fig. 5 PL peak energy (blue) and FWHM (black) as functions of temperature for the InxGa1-xN/GaN MQW samples with (a) x = 0.13, (b) x = 0.1 and (c) x = 0.05.
Fig. 6
Fig. 6 A comparison of PL spectra obtained at 10 K by excitation energies above (325 nm) and below (405 and 376 nm) the QB bandgap energy for the samples with x = (a) 0.13 (b) 0.1.
Fig. 7
Fig. 7 (a) TRPL spectra for MQW (with x = 0.13) obtained at 6 K and RT fitted by the bi-exponential decay (the blue lines correspond to the fit using Eq. (1)). (b) Temperature-dependent lifetime.

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

I(t)= A 1 exp( t τ PL1 )+ A 2 exp( t τ PL2 ),
τ R (T)= τ PL (T) η int (T) ,
τ NR (T)= τ PL (T) 1 η int (T) .

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