Abstract

Recently, transition metal dichalcogenides have been extensively studied as new functional materials for electronic and optoelectronic applications. Most initial efforts have been focused on several members of this material family with 2H lattice structure. ReSe2 as a less-study transition metal dichalcogenide has gained significant momentum due to its 1T lattice structure and in-plane anisotropic electronic and optical properties. Extensive efforts have shown its promising future as a novel material for optoelectronics. However, little was known about the photocarrier dynamics in this material. Here we report the first transient absorption measurement of photocarrier dynamics in ReSe2 bulk and monolayer sample in reflection geometry. We observed ultrafast thermalization and relaxation of hot carriers in bulk ReSe2, and obtained a photocarrier lifetime on the order of 80 ps and decreases slightly with increasing the carrier density. Pronounced anisotropic response of differential reflection was observed. We also studied monolayer ReSe2 samples obtained by chemical vapor deposition and deduced a photocarrier lifetime on the order of 10 ps. These results provide fundamental information for using this material in various optoelectronic devices.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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2018 (1)

S. Jiang, M. Hong, W. Wei, L. Zhao, N. Zhang, Z. Zhang, P. Yang, N. Gao, X. Zhou, C. Xie, J. Shi, Y. Huan, L. Tong, J. Zhao, Q. Zhang, Q. Fu, and Y. Zhang, “Direct synthesis and in situ characterization of monolayer parallelogrammic rhenium diselenide on gold foil,” Chem. Commun. 1, 17 (2018).
[Crossref]

2017 (5)

A. J. Cho, S. D. Namgung, H. Kim, and J. Y. Kwon, “Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure,” APL Mater. 5, 076101 (2017).
[Crossref]

F. Ceballos and H. Zhao, “Ultrafast laser spectroscopy of two-dimensional materials beyond graphene,” Adv. Funct. Mater. 27, 1604509 (2017).
[Crossref]

H. F. Wang, E. F. Liu, Y. Wang, B. Wan, C. H. Ho, F. Miao, and X. G. Wan, “Cleavage tendency of anisotropic two-dimensional materials: ReX2 (X = S, Se) and WTe2,” Phys. Rev. B 96, 165418 (2017).
[Crossref]

A. Arora, J. Noky, M. Druppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. D. Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Kruger, S. M. de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T-ReSe2,” Nano Lett. 17, 3202–3207 (2017).
[Crossref] [PubMed]

F. F. Cui, X. B. Li, Q. L. Feng, J. B. Yin, L. Zhou, D. Y. Liu, K. Q. Liu, X. X. He, X. Liang, S. Z. Liu, Z. B. Lei, Z. H. Liu, H. L. Peng, J. Zhang, J. Kong, and H. Xu, “Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer,” Nano Res. 10, 2732–2742 (2017).
[Crossref]

2016 (7)

M. Hafeez, L. Gan, H. Q. Li, Y. Ma, and T. Y. Zhai, “Chemical vapor deposition synthesis of ultrathin hexagonal ReSe2 flakes for anisotropic raman property and optoelectronic application,” Adv. Mater. 28, 8296–8301 (2016).
[Crossref] [PubMed]

S. H. Jo, H. Y. Park, D. H. Kang, J. Shim, J. Jeon, S. Choi, M. Kim, Y. Park, J. Lee, Y. J. Song, S. Lee, and J. H. Park, “Broad detection range rhenium diselenide photodetector enhanced by (3-aminopropyl)triethoxysilane and triphenylphosphine treatment,” Adv. Mater. 28, 6711 (2016).
[Crossref] [PubMed]

E. Lorchat, G. Froehlicher, and S. Berciaud, “Splitting of interlayer shear modes and photon energy dependent anisotropic raman response in n-layer ReSe21 and ReS2,” ACS Nano 10, 2752–2760 (2016).
[Crossref] [PubMed]

E. Z. Zhang, P. Wang, Z. Li, H. F. Wang, C. Y. Song, C. Huang, Z. G. Chen, L. Yang, K. T. Zhang, S. H. Lu, W. Y. Wang, S. S. Liu, H. H. Fang, X. H. Zhou, H. G. Yang, J. Zou, X. G. Wan, P. Zhou, W. D. Hu, and F. X. Xiu, “Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets,” ACS Nano 10, 8067–8077 (2016).
[Crossref] [PubMed]

X. T. Wang, L. Huang, Y. T. Peng, N. J. Huo, K. D. Wu, C. X. Xia, Z. M. Wei, S. Tongay, and J. B. Li, “Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p-n heterojunctions,” Nano Res. 9, 507–516 (2016).
[Crossref]

Z. Lin, A. McCreary, N. Briggs, S. Subramanian, K. H. Zhang, Y. F. Sun, X. F. Li, N. J. Borys, H. T. Yuan, S. K. Fullerton-Shirey, A. Chernikov, H. Zhao, S. McDonnell, A. M. Lindenberg, K. Xiao, B. J. LeRoy, M. Drndic, J. C. M. Hwang, J. Park, M. Chhowalla, R. E. Schaak, A. Javey, M. C. Hersam, J. Robinson, and M. Terrones, “2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications,” 2D Mater. 3, 042001 (2016).
[Crossref]

L. Hart, S. Dale, S. Hoye, J. L. Webb, and D. Wolverson, “Rhenium dichalcogenides: Layered semiconductors with two vertical orientations,” Nano Lett. 16, 1381–1386 (2016).
[Crossref] [PubMed]

2015 (5)

J. He, D. He, Y. Wang, Q. Cui, F. Ceballos, and H. Zhao, “Spatiotemporal dynamics of excitons in monolayer and bulk WS2,” Nanoscale 7, 9526 (2015).
[Crossref] [PubMed]

E. Gibney, “The super materials that could trump graphene,” Nature 522, 274–276 (2015).
[Crossref] [PubMed]

H. X. Zhong, S. Y. Gao, J. J. Shi, and L. Yang, “Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted 1T diamond-chain structures ReS2 and ReSe2,” Phys. Rev. B 92, 115438 (2015).
[Crossref]

S. X. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. B. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15, 1660–1666 (2015).
[Crossref] [PubMed]

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8, 3651–3661 (2015).
[Crossref]

2014 (12)

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9, 262–267 (2014).
[Crossref] [PubMed]

Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, and Y. Iwasa, “Electrically switchable chiral light-emitting transistor,” Science 344, 725–728 (2014).
[Crossref] [PubMed]

J. S. Ross, P. Klement, A. M. Jones, N. J. Ghimire, J. Yan, D. G. Mandrus, T. Taniguchi, K. Watanabe, K. Kitamura, W. Yao, D. H. Cobden, and X. Xu, “Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions,” Nat. Nanotechnol. 9, 268–274 (2014).
[Crossref] [PubMed]

A. Pospischil, M. M. Furchi, and T. Mueller, “Solar-energy conversion and light emission in an atomic monolayer p-n diode,” Nat. Nanotechnol. 9, 257–261 (2014).
[Crossref] [PubMed]

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6, 7226–7231 (2014).
[Crossref] [PubMed]

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe2: An anisotropic layered semiconductor,” ACS Nano 8, 11154–11164 (2014).
[Crossref] [PubMed]

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. L. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS2,” Phys. Rev. Lett. 113, 076802 (2014).
[Crossref]

K. He, N. Kumar, L. Zhao, Z. Wang, K. F. Mak, H. Zhao, and J. Shan, “Tightly bound excitons in monolayer WSe2,” Phys. Rev. Lett. 113, 026803 (2014).
[Crossref]

H.-L. Liu, C.-C. Shen, S.-H. Su, C.-L. Hsu, M.-Y. Li, and L.-J. Li, “Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry,” Appl. Phys. Lett. 105, 201905 (2014).
[Crossref]

N. Kumar, Q. Cui, F. Ceballos, D. He, Y. Wang, and H. Zhao, “Exciton-exciton annihilation in MoSe2 monolayers,” Phys. Rev. B 89, 125427 (2014).
[Crossref]

N. Kumar, Q. Cui, F. Ceballos, D. He, Y. Wang, and H. Zhao, “Exciton diffusion in monolayer and bulk MoSe2,” Nanoscale 6, 4915–4919 (2014).
[Crossref] [PubMed]

Q. Cui, F. Ceballos, N. Kumar, and H. Zhao, “Transient absorption microscopy of monolayer and bulk WSe2,” ACS Nano 8, 2970–2976 (2014).
[Crossref] [PubMed]

2013 (5)

N. Kumar, J. He, D. He, Y. Wang, and H. Zhao, “Charge carrier dynamics in bulk MoS2 crystal studied by transient absorption microscopy,” J. of Appl. Phys. 113, 133702 (2013).
[Crossref]

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y.-J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. C. Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref] [PubMed]

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87, 161403 (2013).
[Crossref]

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13, 3329–3333 (2013).
[Crossref] [PubMed]

B. Radisavljevic and A. Kis, “Mobility engineering and a metal-insulator transition in monolayer MoS2,” Nat. Mater. 12, 815–820 (2013).
[Crossref] [PubMed]

2012 (3)

H. Wang, L. L. Yu, Y. H. Lee, Y. M. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS2 transistors,” Nano Lett. 12, 4674–4680 (2012).
[Crossref] [PubMed]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref] [PubMed]

R. Wang, B. A. Ruzicka, N. Kumar, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide,” Phys. Rev. B 86, 045406 (2012).
[Crossref]

2011 (1)

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref] [PubMed]

2010 (2)

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref] [PubMed]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: A new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

1999 (2)

C. H. Ho, Y. S. Huang, J. L. Chen, T. E. Dann, and K. K. Tiong, “Electronic structure of ReS2 and ReSe2 from first-principles calculations, photoelectron spectroscopy, and electrolyte electroreflectance,” Phys. Rev. B 60, 15766–15771 (1999).
[Crossref]

K. K. Tiong, C. H. Ho, and Y. S. Huang, “The electrical transport properties of ReS2 and ReSe2 layered crystals,” Solid State Commun. 111, 635–640 (1999).
[Crossref]

1998 (1)

C. H. Ho, Y. S. Huang, K. K. Tiong, and P. C. Liao, “Absorption-edge anisotropy in ReS2 and ReSe2 layered semiconductors,” Phys. Rev. B 58, 16130–16135 (1998).
[Crossref]

1997 (3)

C. H. Ho, P. C. Liao, Y. S. Huang, and K. K. Tiong, “Temperature dependence of energies and broadening parameters of the band-edge excitons of ReS2 and ReSe2,” Phys. Rev. B 55, 15608–15613 (1997).
[Crossref]

C. H. Ho, P. C. Liao, Y. S. Huang, T. R. Yang, and K. K. Tiong, “Optical absorption of ReS2 and ReSe2 single crystals,” J. Appl. Phys. 81, 6380–6383 (1997).
[Crossref]

C. M. Fang, G. A. Wiegers, C. Haas, and R. A. de Groot, “Electronic structures of ReS2, ReSe2 and TcS2 in the real and the hypothetical undistorted structures,” J. Phys.: Condens. Matter 9, 4411–4424 (1997).

1987 (1)

G. Leicht, H. Berger, and F. Levy, “The growth of n-type and p-type ReS2 and ReSe2 single-crystals and their electrical pproperties,” Solid State Commun. 61, 531–534 (1987).
[Crossref]

1984 (1)

J. V. Marzik, R. Kershaw, K. Dwight, and A. Wold, “Photoelectronic properties of ReS2 and ReSe2 single crystals,” J. Solid. State. Chem. 51, 170–175 (1984).
[Crossref]

Ajayan, P. M.

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87, 161403 (2013).
[Crossref]

Arora, A.

A. Arora, J. Noky, M. Druppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. D. Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Kruger, S. M. de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T-ReSe2,” Nano Lett. 17, 3202–3207 (2017).
[Crossref] [PubMed]

Aslan, O. B.

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. L. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS2,” Phys. Rev. Lett. 113, 076802 (2014).
[Crossref]

Baugher, B. W. H.

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9, 262–267 (2014).
[Crossref] [PubMed]

Belle, B. D.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y.-J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. C. Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref] [PubMed]

Bellus, M. Z.

R. Wang, B. A. Ruzicka, N. Kumar, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide,” Phys. Rev. B 86, 045406 (2012).
[Crossref]

Bending, S. J.

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe2: An anisotropic layered semiconductor,” ACS Nano 8, 11154–11164 (2014).
[Crossref] [PubMed]

Berciaud, S.

E. Lorchat, G. Froehlicher, and S. Berciaud, “Splitting of interlayer shear modes and photon energy dependent anisotropic raman response in n-layer ReSe21 and ReS2,” ACS Nano 10, 2752–2760 (2016).
[Crossref] [PubMed]

Berger, H.

G. Leicht, H. Berger, and F. Levy, “The growth of n-type and p-type ReS2 and ReSe2 single-crystals and their electrical pproperties,” Solid State Commun. 61, 531–534 (1987).
[Crossref]

Berkelbach, T. C.

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. L. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS2,” Phys. Rev. Lett. 113, 076802 (2014).
[Crossref]

Bhattacharya, A.

A. Arora, J. Noky, M. Druppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. D. Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Kruger, S. M. de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T-ReSe2,” Nano Lett. 17, 3202–3207 (2017).
[Crossref] [PubMed]

Borys, N. J.

Z. Lin, A. McCreary, N. Briggs, S. Subramanian, K. H. Zhang, Y. F. Sun, X. F. Li, N. J. Borys, H. T. Yuan, S. K. Fullerton-Shirey, A. Chernikov, H. Zhao, S. McDonnell, A. M. Lindenberg, K. Xiao, B. J. LeRoy, M. Drndic, J. C. M. Hwang, J. Park, M. Chhowalla, R. E. Schaak, A. Javey, M. C. Hersam, J. Robinson, and M. Terrones, “2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications,” 2D Mater. 3, 042001 (2016).
[Crossref]

Bratschitsch, R.

A. Arora, J. Noky, M. Druppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. D. Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Kruger, S. M. de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T-ReSe2,” Nano Lett. 17, 3202–3207 (2017).
[Crossref] [PubMed]

Briggs, N.

Z. Lin, A. McCreary, N. Briggs, S. Subramanian, K. H. Zhang, Y. F. Sun, X. F. Li, N. J. Borys, H. T. Yuan, S. K. Fullerton-Shirey, A. Chernikov, H. Zhao, S. McDonnell, A. M. Lindenberg, K. Xiao, B. J. LeRoy, M. Drndic, J. C. M. Hwang, J. Park, M. Chhowalla, R. E. Schaak, A. Javey, M. C. Hersam, J. Robinson, and M. Terrones, “2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications,” 2D Mater. 3, 042001 (2016).
[Crossref]

Britnell, L.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y.-J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. C. Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref] [PubMed]

Brivio, J.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref] [PubMed]

Casiraghi, C.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y.-J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. C. Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref] [PubMed]

Ceballos, F.

F. Ceballos and H. Zhao, “Ultrafast laser spectroscopy of two-dimensional materials beyond graphene,” Adv. Funct. Mater. 27, 1604509 (2017).
[Crossref]

J. He, D. He, Y. Wang, Q. Cui, F. Ceballos, and H. Zhao, “Spatiotemporal dynamics of excitons in monolayer and bulk WS2,” Nanoscale 7, 9526 (2015).
[Crossref] [PubMed]

N. Kumar, Q. Cui, F. Ceballos, D. He, Y. Wang, and H. Zhao, “Exciton-exciton annihilation in MoSe2 monolayers,” Phys. Rev. B 89, 125427 (2014).
[Crossref]

N. Kumar, Q. Cui, F. Ceballos, D. He, Y. Wang, and H. Zhao, “Exciton diffusion in monolayer and bulk MoSe2,” Nanoscale 6, 4915–4919 (2014).
[Crossref] [PubMed]

Q. Cui, F. Ceballos, N. Kumar, and H. Zhao, “Transient absorption microscopy of monolayer and bulk WSe2,” ACS Nano 8, 2970–2976 (2014).
[Crossref] [PubMed]

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87, 161403 (2013).
[Crossref]

Chen, H.

S. X. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. B. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15, 1660–1666 (2015).
[Crossref] [PubMed]

Chen, J. L.

C. H. Ho, Y. S. Huang, J. L. Chen, T. E. Dann, and K. K. Tiong, “Electronic structure of ReS2 and ReSe2 from first-principles calculations, photoelectron spectroscopy, and electrolyte electroreflectance,” Phys. Rev. B 60, 15766–15771 (1999).
[Crossref]

Chen, Z. G.

E. Z. Zhang, P. Wang, Z. Li, H. F. Wang, C. Y. Song, C. Huang, Z. G. Chen, L. Yang, K. T. Zhang, S. H. Lu, W. Y. Wang, S. S. Liu, H. H. Fang, X. H. Zhou, H. G. Yang, J. Zou, X. G. Wan, P. Zhou, W. D. Hu, and F. X. Xiu, “Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets,” ACS Nano 10, 8067–8077 (2016).
[Crossref] [PubMed]

Chernikov, A.

Z. Lin, A. McCreary, N. Briggs, S. Subramanian, K. H. Zhang, Y. F. Sun, X. F. Li, N. J. Borys, H. T. Yuan, S. K. Fullerton-Shirey, A. Chernikov, H. Zhao, S. McDonnell, A. M. Lindenberg, K. Xiao, B. J. LeRoy, M. Drndic, J. C. M. Hwang, J. Park, M. Chhowalla, R. E. Schaak, A. Javey, M. C. Hersam, J. Robinson, and M. Terrones, “2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications,” 2D Mater. 3, 042001 (2016).
[Crossref]

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. L. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS2,” Phys. Rev. Lett. 113, 076802 (2014).
[Crossref]

Chhowalla, M.

Z. Lin, A. McCreary, N. Briggs, S. Subramanian, K. H. Zhang, Y. F. Sun, X. F. Li, N. J. Borys, H. T. Yuan, S. K. Fullerton-Shirey, A. Chernikov, H. Zhao, S. McDonnell, A. M. Lindenberg, K. Xiao, B. J. LeRoy, M. Drndic, J. C. M. Hwang, J. Park, M. Chhowalla, R. E. Schaak, A. Javey, M. C. Hersam, J. Robinson, and M. Terrones, “2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications,” 2D Mater. 3, 042001 (2016).
[Crossref]

Chim, C. Y.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref] [PubMed]

Chin, M. L.

H. Wang, L. L. Yu, Y. H. Lee, Y. M. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS2 transistors,” Nano Lett. 12, 4674–4680 (2012).
[Crossref] [PubMed]

Chiu, H.-Y.

R. Wang, B. A. Ruzicka, N. Kumar, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide,” Phys. Rev. B 86, 045406 (2012).
[Crossref]

Cho, A. J.

A. J. Cho, S. D. Namgung, H. Kim, and J. Y. Kwon, “Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure,” APL Mater. 5, 076101 (2017).
[Crossref]

Choi, S.

S. H. Jo, H. Y. Park, D. H. Kang, J. Shim, J. Jeon, S. Choi, M. Kim, Y. Park, J. Lee, Y. J. Song, S. Lee, and J. H. Park, “Broad detection range rhenium diselenide photodetector enhanced by (3-aminopropyl)triethoxysilane and triphenylphosphine treatment,” Adv. Mater. 28, 6711 (2016).
[Crossref] [PubMed]

Churchill, H. O. H.

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9, 262–267 (2014).
[Crossref] [PubMed]

Cobden, D. H.

J. S. Ross, P. Klement, A. M. Jones, N. J. Ghimire, J. Yan, D. G. Mandrus, T. Taniguchi, K. Watanabe, K. Kitamura, W. Yao, D. H. Cobden, and X. Xu, “Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions,” Nat. Nanotechnol. 9, 268–274 (2014).
[Crossref] [PubMed]

Coleman, J. N.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref] [PubMed]

Crampin, S.

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe2: An anisotropic layered semiconductor,” ACS Nano 8, 11154–11164 (2014).
[Crossref] [PubMed]

Cui, F. F.

F. F. Cui, X. B. Li, Q. L. Feng, J. B. Yin, L. Zhou, D. Y. Liu, K. Q. Liu, X. X. He, X. Liang, S. Z. Liu, Z. B. Lei, Z. H. Liu, H. L. Peng, J. Zhang, J. Kong, and H. Xu, “Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer,” Nano Res. 10, 2732–2742 (2017).
[Crossref]

Cui, Q.

J. He, D. He, Y. Wang, Q. Cui, F. Ceballos, and H. Zhao, “Spatiotemporal dynamics of excitons in monolayer and bulk WS2,” Nanoscale 7, 9526 (2015).
[Crossref] [PubMed]

N. Kumar, Q. Cui, F. Ceballos, D. He, Y. Wang, and H. Zhao, “Exciton diffusion in monolayer and bulk MoSe2,” Nanoscale 6, 4915–4919 (2014).
[Crossref] [PubMed]

N. Kumar, Q. Cui, F. Ceballos, D. He, Y. Wang, and H. Zhao, “Exciton-exciton annihilation in MoSe2 monolayers,” Phys. Rev. B 89, 125427 (2014).
[Crossref]

Q. Cui, F. Ceballos, N. Kumar, and H. Zhao, “Transient absorption microscopy of monolayer and bulk WSe2,” ACS Nano 8, 2970–2976 (2014).
[Crossref] [PubMed]

N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87, 161403 (2013).
[Crossref]

Dale, S.

L. Hart, S. Dale, S. Hoye, J. L. Webb, and D. Wolverson, “Rhenium dichalcogenides: Layered semiconductors with two vertical orientations,” Nano Lett. 16, 1381–1386 (2016).
[Crossref] [PubMed]

Dann, T. E.

C. H. Ho, Y. S. Huang, J. L. Chen, T. E. Dann, and K. K. Tiong, “Electronic structure of ReS2 and ReSe2 from first-principles calculations, photoelectron spectroscopy, and electrolyte electroreflectance,” Phys. Rev. B 60, 15766–15771 (1999).
[Crossref]

de Groot, R. A.

C. M. Fang, G. A. Wiegers, C. Haas, and R. A. de Groot, “Electronic structures of ReS2, ReSe2 and TcS2 in the real and the hypothetical undistorted structures,” J. Phys.: Condens. Matter 9, 4411–4424 (1997).

de Vasconcellos, S. M.

A. Arora, J. Noky, M. Druppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. D. Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Kruger, S. M. de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T-ReSe2,” Nano Lett. 17, 3202–3207 (2017).
[Crossref] [PubMed]

Dean, C. R.

Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation,” Nano Lett. 13, 3329–3333 (2013).
[Crossref] [PubMed]

Deilmann, T.

A. Arora, J. Noky, M. Druppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. D. Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Kruger, S. M. de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T-ReSe2,” Nano Lett. 17, 3202–3207 (2017).
[Crossref] [PubMed]

Drndic, M.

Z. Lin, A. McCreary, N. Briggs, S. Subramanian, K. H. Zhang, Y. F. Sun, X. F. Li, N. J. Borys, H. T. Yuan, S. K. Fullerton-Shirey, A. Chernikov, H. Zhao, S. McDonnell, A. M. Lindenberg, K. Xiao, B. J. LeRoy, M. Drndic, J. C. M. Hwang, J. Park, M. Chhowalla, R. E. Schaak, A. Javey, M. C. Hersam, J. Robinson, and M. Terrones, “2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications,” 2D Mater. 3, 042001 (2016).
[Crossref]

Druppel, M.

A. Arora, J. Noky, M. Druppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. D. Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Kruger, S. M. de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T-ReSe2,” Nano Lett. 17, 3202–3207 (2017).
[Crossref] [PubMed]

Dubey, M.

H. Wang, L. L. Yu, Y. H. Lee, Y. M. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated circuits based on bilayer MoS2 transistors,” Nano Lett. 12, 4674–4680 (2012).
[Crossref] [PubMed]

Dwight, K.

J. V. Marzik, R. Kershaw, K. Dwight, and A. Wold, “Photoelectronic properties of ReS2 and ReSe2 single crystals,” J. Solid. State. Chem. 51, 170–175 (1984).
[Crossref]

Eckmann, A.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y.-J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. C. Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref] [PubMed]

Fang, C. M.

C. M. Fang, G. A. Wiegers, C. Haas, and R. A. de Groot, “Electronic structures of ReS2, ReSe2 and TcS2 in the real and the hypothetical undistorted structures,” J. Phys.: Condens. Matter 9, 4411–4424 (1997).

Fang, H. H.

E. Z. Zhang, P. Wang, Z. Li, H. F. Wang, C. Y. Song, C. Huang, Z. G. Chen, L. Yang, K. T. Zhang, S. H. Lu, W. Y. Wang, S. S. Liu, H. H. Fang, X. H. Zhou, H. G. Yang, J. Zou, X. G. Wan, P. Zhou, W. D. Hu, and F. X. Xiu, “Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets,” ACS Nano 10, 8067–8077 (2016).
[Crossref] [PubMed]

Feng, Q. L.

F. F. Cui, X. B. Li, Q. L. Feng, J. B. Yin, L. Zhou, D. Y. Liu, K. Q. Liu, X. X. He, X. Liang, S. Z. Liu, Z. B. Lei, Z. H. Liu, H. L. Peng, J. Zhang, J. Kong, and H. Xu, “Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer,” Nano Res. 10, 2732–2742 (2017).
[Crossref]

Froehlicher, G.

E. Lorchat, G. Froehlicher, and S. Berciaud, “Splitting of interlayer shear modes and photon energy dependent anisotropic raman response in n-layer ReSe21 and ReS2,” ACS Nano 10, 2752–2760 (2016).
[Crossref] [PubMed]

Fu, Q.

S. Jiang, M. Hong, W. Wei, L. Zhao, N. Zhang, Z. Zhang, P. Yang, N. Gao, X. Zhou, C. Xie, J. Shi, Y. Huan, L. Tong, J. Zhao, Q. Zhang, Q. Fu, and Y. Zhang, “Direct synthesis and in situ characterization of monolayer parallelogrammic rhenium diselenide on gold foil,” Chem. Commun. 1, 17 (2018).
[Crossref]

Fullerton-Shirey, S. K.

Z. Lin, A. McCreary, N. Briggs, S. Subramanian, K. H. Zhang, Y. F. Sun, X. F. Li, N. J. Borys, H. T. Yuan, S. K. Fullerton-Shirey, A. Chernikov, H. Zhao, S. McDonnell, A. M. Lindenberg, K. Xiao, B. J. LeRoy, M. Drndic, J. C. M. Hwang, J. Park, M. Chhowalla, R. E. Schaak, A. Javey, M. C. Hersam, J. Robinson, and M. Terrones, “2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications,” 2D Mater. 3, 042001 (2016).
[Crossref]

Furchi, M. M.

A. Pospischil, M. M. Furchi, and T. Mueller, “Solar-energy conversion and light emission in an atomic monolayer p-n diode,” Nat. Nanotechnol. 9, 257–261 (2014).
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Galli, G.

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D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe2: An anisotropic layered semiconductor,” ACS Nano 8, 11154–11164 (2014).
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H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8, 3651–3661 (2015).
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Ye, J. T.

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Zhang, Y.

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Zhang, Z.

S. Jiang, M. Hong, W. Wei, L. Zhao, N. Zhang, Z. Zhang, P. Yang, N. Gao, X. Zhou, C. Xie, J. Shi, Y. Huan, L. Tong, J. Zhao, Q. Zhang, Q. Fu, and Y. Zhang, “Direct synthesis and in situ characterization of monolayer parallelogrammic rhenium diselenide on gold foil,” Chem. Commun. 1, 17 (2018).
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Zhao, H.

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Z. Lin, A. McCreary, N. Briggs, S. Subramanian, K. H. Zhang, Y. F. Sun, X. F. Li, N. J. Borys, H. T. Yuan, S. K. Fullerton-Shirey, A. Chernikov, H. Zhao, S. McDonnell, A. M. Lindenberg, K. Xiao, B. J. LeRoy, M. Drndic, J. C. M. Hwang, J. Park, M. Chhowalla, R. E. Schaak, A. Javey, M. C. Hersam, J. Robinson, and M. Terrones, “2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications,” 2D Mater. 3, 042001 (2016).
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H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8, 3651–3661 (2015).
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J. He, D. He, Y. Wang, Q. Cui, F. Ceballos, and H. Zhao, “Spatiotemporal dynamics of excitons in monolayer and bulk WS2,” Nanoscale 7, 9526 (2015).
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N. Kumar, Q. Cui, F. Ceballos, D. He, Y. Wang, and H. Zhao, “Exciton-exciton annihilation in MoSe2 monolayers,” Phys. Rev. B 89, 125427 (2014).
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N. Kumar, Q. Cui, F. Ceballos, D. He, Y. Wang, and H. Zhao, “Exciton diffusion in monolayer and bulk MoSe2,” Nanoscale 6, 4915–4919 (2014).
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Q. Cui, F. Ceballos, N. Kumar, and H. Zhao, “Transient absorption microscopy of monolayer and bulk WSe2,” ACS Nano 8, 2970–2976 (2014).
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K. He, N. Kumar, L. Zhao, Z. Wang, K. F. Mak, H. Zhao, and J. Shan, “Tightly bound excitons in monolayer WSe2,” Phys. Rev. Lett. 113, 026803 (2014).
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N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, “Second harmonic microscopy of monolayer MoS2,” Phys. Rev. B 87, 161403 (2013).
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N. Kumar, J. He, D. He, Y. Wang, and H. Zhao, “Charge carrier dynamics in bulk MoS2 crystal studied by transient absorption microscopy,” J. of Appl. Phys. 113, 133702 (2013).
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R. Wang, B. A. Ruzicka, N. Kumar, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide,” Phys. Rev. B 86, 045406 (2012).
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Zhao, J.

S. Jiang, M. Hong, W. Wei, L. Zhao, N. Zhang, Z. Zhang, P. Yang, N. Gao, X. Zhou, C. Xie, J. Shi, Y. Huan, L. Tong, J. Zhao, Q. Zhang, Q. Fu, and Y. Zhang, “Direct synthesis and in situ characterization of monolayer parallelogrammic rhenium diselenide on gold foil,” Chem. Commun. 1, 17 (2018).
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Zhao, L.

S. Jiang, M. Hong, W. Wei, L. Zhao, N. Zhang, Z. Zhang, P. Yang, N. Gao, X. Zhou, C. Xie, J. Shi, Y. Huan, L. Tong, J. Zhao, Q. Zhang, Q. Fu, and Y. Zhang, “Direct synthesis and in situ characterization of monolayer parallelogrammic rhenium diselenide on gold foil,” Chem. Commun. 1, 17 (2018).
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Zhong, H. X.

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8, 3651–3661 (2015).
[Crossref]

H. X. Zhong, S. Y. Gao, J. J. Shi, and L. Yang, “Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted 1T diamond-chain structures ReS2 and ReSe2,” Phys. Rev. B 92, 115438 (2015).
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Zhou, L.

F. F. Cui, X. B. Li, Q. L. Feng, J. B. Yin, L. Zhou, D. Y. Liu, K. Q. Liu, X. X. He, X. Liang, S. Z. Liu, Z. B. Lei, Z. H. Liu, H. L. Peng, J. Zhang, J. Kong, and H. Xu, “Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer,” Nano Res. 10, 2732–2742 (2017).
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E. Z. Zhang, P. Wang, Z. Li, H. F. Wang, C. Y. Song, C. Huang, Z. G. Chen, L. Yang, K. T. Zhang, S. H. Lu, W. Y. Wang, S. S. Liu, H. H. Fang, X. H. Zhou, H. G. Yang, J. Zou, X. G. Wan, P. Zhou, W. D. Hu, and F. X. Xiu, “Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets,” ACS Nano 10, 8067–8077 (2016).
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Zhou, X.

S. Jiang, M. Hong, W. Wei, L. Zhao, N. Zhang, Z. Zhang, P. Yang, N. Gao, X. Zhou, C. Xie, J. Shi, Y. Huan, L. Tong, J. Zhao, Q. Zhang, Q. Fu, and Y. Zhang, “Direct synthesis and in situ characterization of monolayer parallelogrammic rhenium diselenide on gold foil,” Chem. Commun. 1, 17 (2018).
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E. Z. Zhang, P. Wang, Z. Li, H. F. Wang, C. Y. Song, C. Huang, Z. G. Chen, L. Yang, K. T. Zhang, S. H. Lu, W. Y. Wang, S. S. Liu, H. H. Fang, X. H. Zhou, H. G. Yang, J. Zou, X. G. Wan, P. Zhou, W. D. Hu, and F. X. Xiu, “Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets,” ACS Nano 10, 8067–8077 (2016).
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Zou, J.

E. Z. Zhang, P. Wang, Z. Li, H. F. Wang, C. Y. Song, C. Huang, Z. G. Chen, L. Yang, K. T. Zhang, S. H. Lu, W. Y. Wang, S. S. Liu, H. H. Fang, X. H. Zhou, H. G. Yang, J. Zou, X. G. Wan, P. Zhou, W. D. Hu, and F. X. Xiu, “Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets,” ACS Nano 10, 8067–8077 (2016).
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2D Mater. (1)

Z. Lin, A. McCreary, N. Briggs, S. Subramanian, K. H. Zhang, Y. F. Sun, X. F. Li, N. J. Borys, H. T. Yuan, S. K. Fullerton-Shirey, A. Chernikov, H. Zhao, S. McDonnell, A. M. Lindenberg, K. Xiao, B. J. LeRoy, M. Drndic, J. C. M. Hwang, J. Park, M. Chhowalla, R. E. Schaak, A. Javey, M. C. Hersam, J. Robinson, and M. Terrones, “2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications,” 2D Mater. 3, 042001 (2016).
[Crossref]

ACS Nano (4)

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe2: An anisotropic layered semiconductor,” ACS Nano 8, 11154–11164 (2014).
[Crossref] [PubMed]

E. Lorchat, G. Froehlicher, and S. Berciaud, “Splitting of interlayer shear modes and photon energy dependent anisotropic raman response in n-layer ReSe21 and ReS2,” ACS Nano 10, 2752–2760 (2016).
[Crossref] [PubMed]

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Figures (5)

Fig. 1
Fig. 1 (a) Top view of the lattice structure of monolayer ReSe2. (b) Side view of multilayer ReSe2. (c) Optical image of the ReSe2 monolayer sample.(d) Microscope image of the bulk ReSe2 sample studied. The horizontal (H) and vertical (V) directions in the laboratory coordinates are labeled. The angle θ is between H and the long edge of the flake. (e) Atomic force microscope (AFM) image of the ReSe2 monolayer sample. (f) A line scan of the AFM image shown by the white line in (e).
Fig. 2
Fig. 2 Schematics of the differential reflection setup. The inset showes energy diagram of ReSe2 and pump-probe scheme.
Fig. 3
Fig. 3 Differential reflection signal of bulk ReSe2 measured with a 620-nm pump and an 820-nm probe pulses for a short time range (a) and a long time range (b), respectively. Different symbols represent results with different values of the pump fluence, as labeled in (b). (c) shows the peak signal as a function of the pump fluence. (d) shows the two time constants deduced from fits.
Fig. 4
Fig. 4 (a) The peak differential reflection signal as a function of the angle θ. (b) Normalized differential reflection signal measured at different values of θ.
Fig. 5
Fig. 5 (a) Differential reflection signal measured from a ReSe2 monolayer sample with a 620-nm pump and an 820-nm probe. The solid lines are fits by single-exponential functions. (b) The peak differential reflection signal as a function of the pump fluence. (c) The exponential decay time constant obtained from the fits as a function of the pump fluence.

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