Abstract

Direct epitaxial growth of O-band InAs/GaAs quantum-dot laser on Si substrates has been rapidly developing over the past few years. But most of current methodologies are not fully compatible with silicon-on-insulator (SOI) technology, which is the essential platform for silicon photonic devices. By implementing an in situ III-V/Si hybrid growth technique with (111)-faceted Si hollow structures, we demonstrate the first optically pumped InAs/GaAs quantum-dot microdisk laser on SOI substrates grown by molecular beam epitaxy (MBE). The microdisk laser on SOI is characterized with threshold pump power as low as 0.39 mW and a Q factor of 3900 at room temperature. Additionally, the compared device performance of InAs quantum-dot microdisk lasers on GaAs, Si (001) and SOI are simultaneously studied with identical epi-structures.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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2019 (2)

Q. Feng, W. Wei, B. Zhang, H. Wang, J. Wang, H. Cong, T. Wang, and J. J. Zhang, “O-band and C/L-band III-V quantum dot lasers monolithically grown on Ge and Si substrate,” Appl. Sci. (Basel) 9(3), 385 (2019).
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[Crossref]

2018 (3)

2017 (2)

K. M. Lau, B. Shi, Y. T. Wan, A. Y. Liu, Q. Li, S. Zhu, A. C. Gossard, J. E. Bowers, and E. L. Hu, “InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths,” Proc. SPIE 10123, 101230J (2017).

A. Y. Liu, J. Peters, X. Huang, D. Jung, J. Norman, M. L. Lee, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si,” Opt. Lett. 42(2), 338–341 (2017).
[Crossref] [PubMed]

2016 (8)

S. M. Chen, W. Li, J. Wu, Q. Jiang, M. C. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Y. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Y. H. Jhang, R. Mochida, K. Tanabe, K. Takemasa, M. Sugawara, S. Iwamoto, and Y. Arakawa, “Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C,” Opt. Express 24(16), 18428–18435 (2016).
[Crossref] [PubMed]

D. Thomson, A. Zilkie, J. E. Bowers, T. Komljenovic, G. T. Reed, L. Vivien, D. Marris-Morini, E. Cassan, L. Virot, J.-M. Fédéli, J.-M. Hartmann, J. H. Schmid, D. X. Xu, F. Boeuf, P. O’Brien, G. Z. Mashanovich, and M. Nedeljkovic, “Roadmap on silicon photonics,” J. Opt. 18(7), 073003 (2016).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

T. Wang, H. Liu, and J. J. Zhang, “Temperature-dependent photoluminescence characteristics of InAs/GaAs quantum dots directly grown on Si substrates,” Chin. Phys. Lett. 33(4), 044207 (2016).
[Crossref]

Q. Li, Y. T. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot microdisk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
[Crossref]

Y. T. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot microdisk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

Y. T. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot microdisk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

2015 (4)

G. F. R. Chen, T. Wang, K. J. A. Ooi, A. K. L. Chee, L. K. Ang, and D. T. H. Tan, “Wavelength selective mode division multiplexing on a silicon chip,” Opt. Express 23(6), 8095–8103 (2015).
[Crossref] [PubMed]

C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
[Crossref]

Q. Li, K. W. Ng, and K. M. Lau, “Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon,” Appl. Phys. Lett. 106(7), 072105 (2015).
[Crossref]

T. Wang, J. J. Zhang, and H. Liu, “Quantum dot lasers on silicon substrate for silicon photonic integration and their prospect,” Wuli Xuebao 64, 204209 (2015).

2014 (3)

S. M. Chen, M. C. Tang, J. Wu, Q. Jiang, V. G. Dorogan, M. Benamara, Y. I. Mazur, G. J. Salamo, A. J. Seeds, and H. Liu, “1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 °C,” Electron. Lett. 50(20), 1467–1468 (2014).
[Crossref]

A. Rickman, “The commercialization of silicon photonics,” Nat. Photonics 8(8), 579–582 (2014).
[Crossref]

P. Orlandi, F. Morichetti, M. J. Strain, M. Sorel, P. Bassi, and A. Melloni, “Photonic integrated filter with widely tunable bandwidth,” J. Lightwave Technol. 32(5), 897–907 (2014).
[Crossref]

2012 (4)

2011 (2)

2010 (1)

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[Crossref]

2007 (1)

2004 (2)

I. Toshihide and B. Toshihiko, “Lasing characteristics of InAs quantum-dot microdisk from 3 K to room temperature,” Appl. Phys. Lett. 85(8), 1326–1328 (2004).
[Crossref]

E. D. Haberera, R. Sharma, C. Meier, A. R. Stonas, S. Nakamura, S. P. DenBaars, and E. L. Hu, “Free-standing, optically pumped GaN/InGaN microdisk lasers fabricated by photo-electrochemical etching,” Appl. Phys. Lett. 85(22), 5179–5181 (2004).
[Crossref]

1998 (1)

S. M. K. Thiyagarajan, A. F. J. Levi, C. K. Lin, I. Kim, P. D. Dapkus, and S. J. Pearton, “Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers,” Electron. Lett. 34(24), 2333–2334 (1998).
[Crossref]

1992 (1)

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60(3), 289–291 (1992).
[Crossref]

Aitchison, J. S.

Alam, M. Z.

Ang, L. K.

Arakawa, Y.

Asghari, M.

M. Asghari and A. V. Krishnamoorthy, “Silicon photonics: Energy-efficient communication,” Nat. Photonics 5(5), 268–270 (2011).
[Crossref]

Assefa, S.

Baeuerle, B.

C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
[Crossref]

Barwicz, T.

Bassi, P.

Benamara, M.

S. M. Chen, M. C. Tang, J. Wu, Q. Jiang, V. G. Dorogan, M. Benamara, Y. I. Mazur, G. J. Salamo, A. J. Seeds, and H. Liu, “1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 °C,” Electron. Lett. 50(20), 1467–1468 (2014).
[Crossref]

Boeuf, F.

D. Thomson, A. Zilkie, J. E. Bowers, T. Komljenovic, G. T. Reed, L. Vivien, D. Marris-Morini, E. Cassan, L. Virot, J.-M. Fédéli, J.-M. Hartmann, J. H. Schmid, D. X. Xu, F. Boeuf, P. O’Brien, G. Z. Mashanovich, and M. Nedeljkovic, “Roadmap on silicon photonics,” J. Opt. 18(7), 073003 (2016).
[Crossref]

Bowers, J. E.

K. M. Lau, B. Shi, Y. T. Wan, A. Y. Liu, Q. Li, S. Zhu, A. C. Gossard, J. E. Bowers, and E. L. Hu, “InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths,” Proc. SPIE 10123, 101230J (2017).

A. Y. Liu, J. Peters, X. Huang, D. Jung, J. Norman, M. L. Lee, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si,” Opt. Lett. 42(2), 338–341 (2017).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

D. Thomson, A. Zilkie, J. E. Bowers, T. Komljenovic, G. T. Reed, L. Vivien, D. Marris-Morini, E. Cassan, L. Virot, J.-M. Fédéli, J.-M. Hartmann, J. H. Schmid, D. X. Xu, F. Boeuf, P. O’Brien, G. Z. Mashanovich, and M. Nedeljkovic, “Roadmap on silicon photonics,” J. Opt. 18(7), 073003 (2016).
[Crossref]

Y. T. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot microdisk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

Q. Li, Y. T. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot microdisk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
[Crossref]

Y. T. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot microdisk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[Crossref]

Cassan, E.

D. Thomson, A. Zilkie, J. E. Bowers, T. Komljenovic, G. T. Reed, L. Vivien, D. Marris-Morini, E. Cassan, L. Virot, J.-M. Fédéli, J.-M. Hartmann, J. H. Schmid, D. X. Xu, F. Boeuf, P. O’Brien, G. Z. Mashanovich, and M. Nedeljkovic, “Roadmap on silicon photonics,” J. Opt. 18(7), 073003 (2016).
[Crossref]

L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. Fédéli, “Zero-bias 40Gbit/s germanium waveguide photodetector on silicon,” Opt. Express 20(2), 1096–1101 (2012).
[Crossref] [PubMed]

Chee, A. K. L.

Chen, G. F. R.

Chen, S. M.

Y. Wang, S. M. Chen, Y. Yu, L. D. Zhou, L. Liu, C. C. Yang, M. Y. Liao, M. C. Tang, Z. Z. Liu, J. Wu, W. Li, I. Ross, A. J. Seeds, H. Liu, and S. Y. Yu, “Monolithic quantum-dot distributed feedback laser array on silicon,” Optica 5(5), 528–533 (2018).
[Crossref]

S. M. Chen, W. Li, J. Wu, Q. Jiang, M. C. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Y. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

S. M. Chen, M. C. Tang, J. Wu, Q. Jiang, V. G. Dorogan, M. Benamara, Y. I. Mazur, G. J. Salamo, A. J. Seeds, and H. Liu, “1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 °C,” Electron. Lett. 50(20), 1467–1468 (2014).
[Crossref]

Chetrit, Y.

Chow, W. W.

Y. T. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot microdisk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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S. M. K. Thiyagarajan, A. F. J. Levi, C. K. Lin, I. Kim, P. D. Dapkus, and S. J. Pearton, “Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers,” Electron. Lett. 34(24), 2333–2334 (1998).
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DenBaars, S. P.

E. D. Haberera, R. Sharma, C. Meier, A. R. Stonas, S. Nakamura, S. P. DenBaars, and E. L. Hu, “Free-standing, optically pumped GaN/InGaN microdisk lasers fabricated by photo-electrochemical etching,” Appl. Phys. Lett. 85(22), 5179–5181 (2004).
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Dorogan, V. G.

S. M. Chen, M. C. Tang, J. Wu, Q. Jiang, V. G. Dorogan, M. Benamara, Y. I. Mazur, G. J. Salamo, A. J. Seeds, and H. Liu, “1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 °C,” Electron. Lett. 50(20), 1467–1468 (2014).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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B. Zhang, W. Q. Wei, J. H. Wang, H. L. Wang, Z. Zhao, L. Liu, H. Cong, Q. Feng, H. Liu, T. Wang, and J. J. Zhang, “O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy,” AIP Adv. 9(1), 015331 (2019).
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Q. Feng, W. Wei, B. Zhang, H. Wang, J. Wang, H. Cong, T. Wang, and J. J. Zhang, “O-band and C/L-band III-V quantum dot lasers monolithically grown on Ge and Si substrate,” Appl. Sci. (Basel) 9(3), 385 (2019).
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A. Y. Liu, J. Peters, X. Huang, D. Jung, J. Norman, M. L. Lee, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si,” Opt. Lett. 42(2), 338–341 (2017).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. T. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot microdisk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

Y. T. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot microdisk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

Q. Li, Y. T. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot microdisk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
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Haberera, E. D.

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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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Hartmann, J.-M.

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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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Hu, E. L.

K. M. Lau, B. Shi, Y. T. Wan, A. Y. Liu, Q. Li, S. Zhu, A. C. Gossard, J. E. Bowers, and E. L. Hu, “InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths,” Proc. SPIE 10123, 101230J (2017).

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. T. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot microdisk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

Y. T. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot microdisk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

Q. Li, Y. T. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot microdisk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
[Crossref]

E. D. Haberera, R. Sharma, C. Meier, A. R. Stonas, S. Nakamura, S. P. DenBaars, and E. L. Hu, “Free-standing, optically pumped GaN/InGaN microdisk lasers fabricated by photo-electrochemical etching,” Appl. Phys. Lett. 85(22), 5179–5181 (2004).
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Huang, X.

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Jiang, Q.

S. M. Chen, W. Li, J. Wu, Q. Jiang, M. C. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Y. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
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S. M. Chen, M. C. Tang, J. Wu, Q. Jiang, V. G. Dorogan, M. Benamara, Y. I. Mazur, G. J. Salamo, A. J. Seeds, and H. Liu, “1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 °C,” Electron. Lett. 50(20), 1467–1468 (2014).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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S. M. K. Thiyagarajan, A. F. J. Levi, C. K. Lin, I. Kim, P. D. Dapkus, and S. J. Pearton, “Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers,” Electron. Lett. 34(24), 2333–2334 (1998).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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D. Thomson, A. Zilkie, J. E. Bowers, T. Komljenovic, G. T. Reed, L. Vivien, D. Marris-Morini, E. Cassan, L. Virot, J.-M. Fédéli, J.-M. Hartmann, J. H. Schmid, D. X. Xu, F. Boeuf, P. O’Brien, G. Z. Mashanovich, and M. Nedeljkovic, “Roadmap on silicon photonics,” J. Opt. 18(7), 073003 (2016).
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K. M. Lau, B. Shi, Y. T. Wan, A. Y. Liu, Q. Li, S. Zhu, A. C. Gossard, J. E. Bowers, and E. L. Hu, “InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths,” Proc. SPIE 10123, 101230J (2017).

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. T. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot microdisk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
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Y. T. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot microdisk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
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Q. Li, Y. T. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot microdisk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
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Lee, M. L.

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C. Haffner, W. Heni, Y. Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y. Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, and J. Leuthold, “All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale,” Nat. Photonics 9(8), 525–528 (2015).
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S. M. K. Thiyagarajan, A. F. J. Levi, C. K. Lin, I. Kim, P. D. Dapkus, and S. J. Pearton, “Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers,” Electron. Lett. 34(24), 2333–2334 (1998).
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Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. T. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot microdisk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
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Y. T. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot microdisk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
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K. M. Lau, B. Shi, Y. T. Wan, A. Y. Liu, Q. Li, S. Zhu, A. C. Gossard, J. E. Bowers, and E. L. Hu, “InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths,” Proc. SPIE 10123, 101230J (2017).

A. Y. Liu, J. Peters, X. Huang, D. Jung, J. Norman, M. L. Lee, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si,” Opt. Lett. 42(2), 338–341 (2017).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. T. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot microdisk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

Q. Li, Y. T. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot microdisk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
[Crossref]

Y. T. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot microdisk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
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S. M. Chen, W. Li, J. Wu, Q. Jiang, M. C. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Y. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
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Q. Feng, W. Wei, B. Zhang, H. Wang, J. Wang, H. Cong, T. Wang, and J. J. Zhang, “O-band and C/L-band III-V quantum dot lasers monolithically grown on Ge and Si substrate,” Appl. Sci. (Basel) 9(3), 385 (2019).
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B. Zhang, W. Q. Wei, J. H. Wang, H. L. Wang, Z. Zhao, L. Liu, H. Cong, Q. Feng, H. Liu, T. Wang, and J. J. Zhang, “O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy,” AIP Adv. 9(1), 015331 (2019).
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Figures (9)

Fig. 1
Fig. 1 Cross-sectional SEM images of GaAs buffer layers on (a) Si (001) and (b) SOI substrate.
Fig. 2
Fig. 2 (a) Cross-sectional schematic diagram of the InAs/GaAs QD microdisk laser on SOI, Si, or GaAs substrate. (b) Three-dimensional schematic diagram of the InAs/GaAs QD microdisk laser on SOI substrates. Inset shows the QD active layer.
Fig. 3
Fig. 3 Tilted and top-view SEM images of disk laser on GaAs substrate (a), Si substrate (b) and SOI substrate (c).
Fig. 4
Fig. 4 5 × 5 μm2 AFM image of the GaAs film deposited on patterned SOI (a) and standard SOI (b) substrates. Top-view SEM image of GaAs grown on patterned SOI substrate (c) and standard SOI substrate (d).
Fig. 5
Fig. 5 (a) XRD ω-2θ curve of III-V buffer layer on the SOI substrate. (b) (004) ω-rocking curves across the GaAs peak by the incident x-ray beam perpendicular and parallel to the trenches. (c) Cross-sectional bright field TEM image of GaAs on sawtooth-hollow-structured SOI substrate, taken along the [110] axis. (d) Zoomed-in cross-sectional TEM images of the interface between GaAs and Si.
Fig. 6
Fig. 6 Room-temperature photoluminescent spectra of InAs/GaAs QDs grown on GaAs, Si (001) and SOI substrates. Insets are the 1 × 1 μm2 AFM images of the surface InAs QDs on GaAs, Si (001) and SOI.
Fig. 7
Fig. 7 Integrated intensity of microdisk lasers as a function of wavelength (L-L curve) for devices on the (a) GaAs substrate and (b) Si substrate at room temperature. Inset: shows the log-log plot of the L-L curve, indicating an “S-shaped” transition. μPL spectra of the 4-μm-diameter microdisk laser at different pump powers for devices on the (c) GaAs substrate and (d) Si substrate.
Fig. 8
Fig. 8 (a) Lasing characteristics of a 4-μm-diameter microdisk on SOI. Photoluminescent spectra as a function of pump power. Inset: Zoom-in spectrum of the microdisk pumping in 0.64mw. (b) Linear plot of integrated output intensity versus effective input power (L-L curve). Inset: Double-logarithmic plot of the L-L curve. (c) FWHM evolution with the pump power.
Fig. 9
Fig. 9 Schematics of proposed on-chip integration design for InAs QD MDLs and electrically pumped fabry-perot laser.

Tables (1)

Tables Icon

Table 1 Comparison of various InAs QD microdisk lasers on GaAs, Si and SOI substrates

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