Abstract

Two-dimensional (2-D) hexagonal boron nitride (h-BN) has attracted considerable attention for deep ultraviolet optoelectronics and visible single photon sources, however, realization of an electrically-driven light emitter remains challenging due to its wide bandgap nature. Here, we report electrically-driven visible light emission with a red-shift under increasing electric field from a few layer h-BN by employing a five-period Al2O3/h-BN multiple heterostructure and a graphene top electrode. Investigation of electrical properties reveals that the Al2O3 layers act as potential barriers confining injected carriers within the h-BN wells, while suppressing the electrostatic breakdown by trap-assisted tunneling, to increase the probability of radiative recombination. The result highlights a promising potential of such multiple heterostructure as a practical and efficient platform for electrically-driven light emitters based on wide bandgap two-dimensional materials.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article
OSA Recommended Articles
Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector

Zhiqian Wu, Xiaoqiang Li, Huikai Zhong, Shengjiao Zhang, Peng Wang, Tae-ho Kim, Sung Soo Kwak, Cheng Liu, Hongsheng Chen, Sang-Woo Kim, and Shisheng Lin
Opt. Express 23(15) 18864-18871 (2015)

Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction

H. Y. Yang, S. F. Yu, H. K. Liang, T. P. Chen, J. Gao, and T. Wu
Opt. Express 18(15) 15585-15590 (2010)

References

  • View by:
  • |
  • |
  • |

  1. G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
    [Crossref] [PubMed]
  2. F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
    [Crossref] [PubMed]
  3. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
    [Crossref] [PubMed]
  4. Y. Li, Y.-L. Li, B. Sa, and R. Ahuja, “Review of two-dimensional materials for photocatalytic water splitting from a theoretical perspective,” Catal. Sci. Technol. 7(3), 545–559 (2017).
    [Crossref]
  5. C. N. Rao, K. Gopalakrishnan, and U. Maitra, “Comparative study of potential applications of graphene, MoS2, and other two-dimensional materials in energy devices, sensors, and related areas,” ACS Appl. Mater. Interfaces 7(15), 7809–7832 (2015).
    [Crossref] [PubMed]
  6. S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
    [Crossref] [PubMed]
  7. K. Watanabe, T. Taniguchi, and H. Kanda, “Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal,” Nat. Mater. 3(6), 404–409 (2004).
    [Crossref] [PubMed]
  8. Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, “Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure,” Science 317(5840), 932–934 (2007).
    [Crossref] [PubMed]
  9. H. X. Jiang and J. Y. Lin, “Hexagonal boron nitride for deep ultraviolet photonic devices,” Semicond. Sci. Technol. 29(8), 084003 (2014).
    [Crossref]
  10. G. Cassabois, P. Valvin, and B. Gil, “Hexagonal boron nitride is an indirect bandgap semiconductor,” Nat. Photonics 10(4), 262–266 (2016).
    [Crossref]
  11. K. Watanabe, T. Taniguchi, T. Kuroda, and H. Kanda, “Effects of deformation on band-edge luminescence of hexagonal boron nitride single crystals,” Appl. Phys. Lett. 89(14), 141902 (2006).
    [Crossref]
  12. L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
    [Crossref] [PubMed]
  13. X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origin of deep-level impurity transitions in hexagonal boron nitride,” Appl. Phys. Lett. 106(2), 021110 (2015).
    [Crossref]
  14. X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origins of near band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 108(5), 052106 (2016).
    [Crossref]
  15. T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nat. Nanotechnol. 11(1), 37–41 (2016).
    [Crossref] [PubMed]
  16. T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
    [Crossref] [PubMed]
  17. S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
    [Crossref] [PubMed]
  18. G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
    [Crossref] [PubMed]
  19. M. Koperski, K. Nogajewski, and M. Potemski, “Single photon emitters in boron nitride: More than a supplementary material,” Opt. Commun. 411, 158–165 (2018).
    [Crossref]
  20. S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
    [Crossref] [PubMed]
  21. K. Watanabe, T. Taniguchi, T. Niiyama, K. Miya, and M. Taniguchi, “Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride,” Nat. Photonics 3(10), 591–594 (2009).
    [Crossref]
  22. D. Lee and S. H. Song, “Ultra-thin ultraviolet cathodoluminescent device based on exfoliated hexagonal boron nitride,” RSC Advances 7(13), 7831–7835 (2017).
    [Crossref]
  23. F. Giubileo, A. D. Bartolomeo, L. Iemmo, G. Luongo, and F. Urban, “Field emission from carbon nanostructures,” Appl. Sci. (Basel) 8(4), 526 (2018).
    [Crossref]
  24. C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
    [Crossref]
  25. M. Bokdam, G. Brocks, M. I. Katsnelson, and P. J. Kelly, “Schottky barriers at hexagonal boron nitride/metal interfaces: A first-principles study,” Phys. Rev. B Condens. Matter Mater. Phys. 90(8), 085415 (2014).
    [Crossref]
  26. R. Dahal, K. Ahmed, J. W. Wu, A. Weltz, J. J.-Q. Lu, Y. Danon, and I. B. Bhat, “Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films,” Appl. Phys. Express 9(6), 065801 (2016).
    [Crossref]
  27. Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
    [Crossref] [PubMed]
  28. H. X. Jiang and J. Y. Lin, “Review—hexagonal boron nitride epilayers: growth, optical properties and device applications,” ECS J. Solid State Sci. Technol. 6(2), Q3012–Q3021 (2017).
    [Crossref]
  29. M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
    [Crossref] [PubMed]
  30. Z. Q. Liu, W. K. Chim, S. Y. Chiam, J. S. Pan, and C. M. Ng, “An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point,” J. Mater. Chem. 22(34), 17887–17892 (2012).
    [Crossref]
  31. A. Laturia, M. L. Van de Put, and W. G. Vandenberghe, “Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk,” NPJ 2D Mater. Appl. 2(1), 6 (2018).
    [Crossref]
  32. C. Krag and I. J. R. Baumvol, Handbook of Thin Films (Academic, 2002), Chap. 3.
  33. X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride,” Appl. Phys. Lett. 111(13), 132106 (2017).
    [Crossref]
  34. L. Q. Zhu, Y. H. Liu, H. L. Zhang, H. Xiao, and L. Q. Guo, “Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications,” Appl. Surf. Sci. 288, 430–434 (2014).
    [Crossref]
  35. A. Segura, L. Artús, R. Cuscó, T. Taniguchi, G. Cassabois, and B. Gil, “Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range,” Phys. Rev. Mater. 2(2), 024001 (2018).
    [Crossref]
  36. Y. Kanemitsu, “Efficient light emission from crystalline and amorphous silicon nanostructures,” J. Lumin. 100(1-4), 209–217 (2002).
    [Crossref]
  37. G. Longo, M.-G. La-Placa, M. Sessolo, and H. J. Bolink, “High photoluminescence quantum yields in organic semiconductor–perovskite composite thin films,” ChemSusChem 10(19), 3788–3793 (2017).
    [Crossref] [PubMed]
  38. N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
    [Crossref] [PubMed]
  39. Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride,” Appl. Phys. Lett. 109(25), 253111 (2016).
    [Crossref]
  40. Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal boron nitride,” ACS Nano 9(1), 916–921 (2015).
    [Crossref] [PubMed]
  41. Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride,” ACS Appl. Mater. Interfaces 8(41), 27877–27884 (2016).
    [Crossref] [PubMed]
  42. G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, “Electron tunneling through atomically flat and ultrathin hexagonal boron nitride,” Appl. Phys. Lett. 99(24), 243114 (2011).
    [Crossref]
  43. R. Y. Khosa, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan, and E. Ö. Sveinbjörnsson, “Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC,” AIP Adv. 8(2), 025304 (2018).
    [Crossref]
  44. L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
    [Crossref] [PubMed]
  45. A. Ranjan, N. Raghavan, S. J. O’Shea, S. Mei, M. Bosman, K. Shubhakar, and K. L. Pey, “Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics,” 2018 IEEE International Reliability Physics Symposium (IRPS) (2018).
    [Crossref]
  46. X. Z. Du, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Layer number dependent optical properties of multilayer hexagonal BN epilayers,” Appl. Phys. Lett. 110(9), 092102 (2017).
    [Crossref]
  47. C. Chakraborty, K. M. Goodfellow, S. Dhara, A. Yoshimura, V. Meunier, and A. N. Vamivakas, “Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure,” Nano Lett. 17(4), 2253–2258 (2017).
    [Crossref] [PubMed]
  48. G. Noh, D. Choi, J.-H. Kim, D.-G. Im, Y.-H. Kim, H. Seo, and J. Lee, “Stark tuning of single-photon emitters in hexagonal boron nitride,” Nano Lett. 18(8), 4710–4715 (2018).
    [Crossref] [PubMed]
  49. L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
    [Crossref] [PubMed]
  50. D. W. Hamby, D. A. Lucca, M. J. Klopfstein, and G. Cantwell, “Temperature dependent exciton photoluminescence of bulk ZnO,” J. Appl. Phys. 93(6), 3214–3217 (2003).
    [Crossref]
  51. A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium‐assisted p‐type doping for ZnO homojunction light-emitting devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
    [Crossref]
  52. J.-H. Lim, C.-K. Kang, K.-K. Kim, I.-K. Park, D.-K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high‐temperature radiofrequency sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
    [Crossref]

2019 (1)

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

2018 (6)

M. Koperski, K. Nogajewski, and M. Potemski, “Single photon emitters in boron nitride: More than a supplementary material,” Opt. Commun. 411, 158–165 (2018).
[Crossref]

F. Giubileo, A. D. Bartolomeo, L. Iemmo, G. Luongo, and F. Urban, “Field emission from carbon nanostructures,” Appl. Sci. (Basel) 8(4), 526 (2018).
[Crossref]

A. Laturia, M. L. Van de Put, and W. G. Vandenberghe, “Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk,” NPJ 2D Mater. Appl. 2(1), 6 (2018).
[Crossref]

A. Segura, L. Artús, R. Cuscó, T. Taniguchi, G. Cassabois, and B. Gil, “Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range,” Phys. Rev. Mater. 2(2), 024001 (2018).
[Crossref]

R. Y. Khosa, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan, and E. Ö. Sveinbjörnsson, “Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC,” AIP Adv. 8(2), 025304 (2018).
[Crossref]

G. Noh, D. Choi, J.-H. Kim, D.-G. Im, Y.-H. Kim, H. Seo, and J. Lee, “Stark tuning of single-photon emitters in hexagonal boron nitride,” Nano Lett. 18(8), 4710–4715 (2018).
[Crossref] [PubMed]

2017 (11)

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

X. Z. Du, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Layer number dependent optical properties of multilayer hexagonal BN epilayers,” Appl. Phys. Lett. 110(9), 092102 (2017).
[Crossref]

C. Chakraborty, K. M. Goodfellow, S. Dhara, A. Yoshimura, V. Meunier, and A. N. Vamivakas, “Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure,” Nano Lett. 17(4), 2253–2258 (2017).
[Crossref] [PubMed]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride,” Appl. Phys. Lett. 111(13), 132106 (2017).
[Crossref]

H. X. Jiang and J. Y. Lin, “Review—hexagonal boron nitride epilayers: growth, optical properties and device applications,” ECS J. Solid State Sci. Technol. 6(2), Q3012–Q3021 (2017).
[Crossref]

G. Longo, M.-G. La-Placa, M. Sessolo, and H. J. Bolink, “High photoluminescence quantum yields in organic semiconductor–perovskite composite thin films,” ChemSusChem 10(19), 3788–3793 (2017).
[Crossref] [PubMed]

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

D. Lee and S. H. Song, “Ultra-thin ultraviolet cathodoluminescent device based on exfoliated hexagonal boron nitride,” RSC Advances 7(13), 7831–7835 (2017).
[Crossref]

Y. Li, Y.-L. Li, B. Sa, and R. Ahuja, “Review of two-dimensional materials for photocatalytic water splitting from a theoretical perspective,” Catal. Sci. Technol. 7(3), 545–559 (2017).
[Crossref]

2016 (10)

G. Cassabois, P. Valvin, and B. Gil, “Hexagonal boron nitride is an indirect bandgap semiconductor,” Nat. Photonics 10(4), 262–266 (2016).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origins of near band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 108(5), 052106 (2016).
[Crossref]

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nat. Nanotechnol. 11(1), 37–41 (2016).
[Crossref] [PubMed]

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

R. Dahal, K. Ahmed, J. W. Wu, A. Weltz, J. J.-Q. Lu, Y. Danon, and I. B. Bhat, “Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films,” Appl. Phys. Express 9(6), 065801 (2016).
[Crossref]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride,” Appl. Phys. Lett. 109(25), 253111 (2016).
[Crossref]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride,” ACS Appl. Mater. Interfaces 8(41), 27877–27884 (2016).
[Crossref] [PubMed]

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium‐assisted p‐type doping for ZnO homojunction light-emitting devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

2015 (3)

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal boron nitride,” ACS Nano 9(1), 916–921 (2015).
[Crossref] [PubMed]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origin of deep-level impurity transitions in hexagonal boron nitride,” Appl. Phys. Lett. 106(2), 021110 (2015).
[Crossref]

C. N. Rao, K. Gopalakrishnan, and U. Maitra, “Comparative study of potential applications of graphene, MoS2, and other two-dimensional materials in energy devices, sensors, and related areas,” ACS Appl. Mater. Interfaces 7(15), 7809–7832 (2015).
[Crossref] [PubMed]

2014 (5)

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref] [PubMed]

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

H. X. Jiang and J. Y. Lin, “Hexagonal boron nitride for deep ultraviolet photonic devices,” Semicond. Sci. Technol. 29(8), 084003 (2014).
[Crossref]

L. Q. Zhu, Y. H. Liu, H. L. Zhang, H. Xiao, and L. Q. Guo, “Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications,” Appl. Surf. Sci. 288, 430–434 (2014).
[Crossref]

M. Bokdam, G. Brocks, M. I. Katsnelson, and P. J. Kelly, “Schottky barriers at hexagonal boron nitride/metal interfaces: A first-principles study,” Phys. Rev. B Condens. Matter Mater. Phys. 90(8), 085415 (2014).
[Crossref]

2013 (3)

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
[Crossref] [PubMed]

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

2012 (3)

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Z. Q. Liu, W. K. Chim, S. Y. Chiam, J. S. Pan, and C. M. Ng, “An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point,” J. Mater. Chem. 22(34), 17887–17892 (2012).
[Crossref]

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

2011 (1)

G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, “Electron tunneling through atomically flat and ultrathin hexagonal boron nitride,” Appl. Phys. Lett. 99(24), 243114 (2011).
[Crossref]

2009 (1)

K. Watanabe, T. Taniguchi, T. Niiyama, K. Miya, and M. Taniguchi, “Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride,” Nat. Photonics 3(10), 591–594 (2009).
[Crossref]

2007 (1)

Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, “Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure,” Science 317(5840), 932–934 (2007).
[Crossref] [PubMed]

2006 (2)

K. Watanabe, T. Taniguchi, T. Kuroda, and H. Kanda, “Effects of deformation on band-edge luminescence of hexagonal boron nitride single crystals,” Appl. Phys. Lett. 89(14), 141902 (2006).
[Crossref]

J.-H. Lim, C.-K. Kang, K.-K. Kim, I.-K. Park, D.-K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high‐temperature radiofrequency sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[Crossref]

2004 (1)

K. Watanabe, T. Taniguchi, and H. Kanda, “Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal,” Nat. Mater. 3(6), 404–409 (2004).
[Crossref] [PubMed]

2003 (1)

D. W. Hamby, D. A. Lucca, M. J. Klopfstein, and G. Cantwell, “Temperature dependent exciton photoluminescence of bulk ZnO,” J. Appl. Phys. 93(6), 3214–3217 (2003).
[Crossref]

2002 (1)

Y. Kanemitsu, “Efficient light emission from crystalline and amorphous silicon nanostructures,” J. Lumin. 100(1-4), 209–217 (2002).
[Crossref]

Aharonovich, I.

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nat. Nanotechnol. 11(1), 37–41 (2016).
[Crossref] [PubMed]

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

Ahmed, K.

R. Dahal, K. Ahmed, J. W. Wu, A. Weltz, J. J.-Q. Lu, Y. Danon, and I. B. Bhat, “Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films,” Appl. Phys. Express 9(6), 065801 (2016).
[Crossref]

Ahuja, R.

Y. Li, Y.-L. Li, B. Sa, and R. Ahuja, “Review of two-dimensional materials for photocatalytic water splitting from a theoretical perspective,” Catal. Sci. Technol. 7(3), 545–559 (2017).
[Crossref]

Ali, S.

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

Artús, L.

A. Segura, L. Artús, R. Cuscó, T. Taniguchi, G. Cassabois, and B. Gil, “Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range,” Phys. Rev. Mater. 2(2), 024001 (2018).
[Crossref]

Avouris, P.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Banerjee, S. K.

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref] [PubMed]

Barjon, J.

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

Bartolomeo, A. D.

F. Giubileo, A. D. Bartolomeo, L. Iemmo, G. Luongo, and F. Urban, “Field emission from carbon nanostructures,” Appl. Sci. (Basel) 8(4), 526 (2018).
[Crossref]

Belle, B. D.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Bensalah, H.

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

Bentham, C.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Bhat, I. B.

R. Dahal, K. Ahmed, J. W. Wu, A. Weltz, J. J.-Q. Lu, Y. Danon, and I. B. Bhat, “Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films,” Appl. Phys. Express 9(6), 065801 (2016).
[Crossref]

Bokdam, M.

M. Bokdam, G. Brocks, M. I. Katsnelson, and P. J. Kelly, “Schottky barriers at hexagonal boron nitride/metal interfaces: A first-principles study,” Phys. Rev. B Condens. Matter Mater. Phys. 90(8), 085415 (2014).
[Crossref]

Bolink, H. J.

G. Longo, M.-G. La-Placa, M. Sessolo, and H. J. Bolink, “High photoluminescence quantum yields in organic semiconductor–perovskite composite thin films,” ChemSusChem 10(19), 3788–3793 (2017).
[Crossref] [PubMed]

Bonaccorso, F.

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref] [PubMed]

Bosman, M.

A. Ranjan, N. Raghavan, S. J. O’Shea, S. Mei, M. Bosman, K. Shubhakar, and K. L. Pey, “Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics,” 2018 IEEE International Reliability Physics Symposium (IRPS) (2018).
[Crossref]

Bray, K.

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nat. Nanotechnol. 11(1), 37–41 (2016).
[Crossref] [PubMed]

Britnell, L.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Brocks, G.

M. Bokdam, G. Brocks, M. I. Katsnelson, and P. J. Kelly, “Schottky barriers at hexagonal boron nitride/metal interfaces: A first-principles study,” Phys. Rev. B Condens. Matter Mater. Phys. 90(8), 085415 (2014).
[Crossref]

Butler, S. Z.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Cantwell, G.

D. W. Hamby, D. A. Lucca, M. J. Klopfstein, and G. Cantwell, “Temperature dependent exciton photoluminescence of bulk ZnO,” J. Appl. Phys. 93(6), 3214–3217 (2003).
[Crossref]

Cao, L.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Cassabois, G.

A. Segura, L. Artús, R. Cuscó, T. Taniguchi, G. Cassabois, and B. Gil, “Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range,” Phys. Rev. Mater. 2(2), 024001 (2018).
[Crossref]

G. Cassabois, P. Valvin, and B. Gil, “Hexagonal boron nitride is an indirect bandgap semiconductor,” Nat. Photonics 10(4), 262–266 (2016).
[Crossref]

Chakraborty, C.

C. Chakraborty, K. M. Goodfellow, S. Dhara, A. Yoshimura, V. Meunier, and A. N. Vamivakas, “Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure,” Nano Lett. 17(4), 2253–2258 (2017).
[Crossref] [PubMed]

Chejanovsky, N.

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Chen, A.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium‐assisted p‐type doping for ZnO homojunction light-emitting devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Chen, M.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium‐assisted p‐type doping for ZnO homojunction light-emitting devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Cheng, H.-M.

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

Chiam, S. Y.

Z. Q. Liu, W. K. Chim, S. Y. Chiam, J. S. Pan, and C. M. Ng, “An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point,” J. Mater. Chem. 22(34), 17887–17892 (2012).
[Crossref]

Chim, W. K.

Z. Q. Liu, W. K. Chim, S. Y. Chiam, J. S. Pan, and C. M. Ng, “An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point,” J. Mater. Chem. 22(34), 17887–17892 (2012).
[Crossref]

Choi, D.

G. Noh, D. Choi, J.-H. Kim, D.-G. Im, Y.-H. Kim, H. Seo, and J. Lee, “Stark tuning of single-photon emitters in hexagonal boron nitride,” Nano Lett. 18(8), 4710–4715 (2018).
[Crossref] [PubMed]

Choi, M. S.

M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
[Crossref] [PubMed]

Choi, S.

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

Clarke, E.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Coleman, J. N.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Coles, R. J.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Colombo, L.

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref] [PubMed]

Cui, Y.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Cuscó, R.

A. Segura, L. Artús, R. Cuscó, T. Taniguchi, G. Cassabois, and B. Gil, “Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range,” Phys. Rev. Mater. 2(2), 024001 (2018).
[Crossref]

Dahal, R.

R. Dahal, K. Ahmed, J. W. Wu, A. Weltz, J. J.-Q. Lu, Y. Danon, and I. B. Bhat, “Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films,” Appl. Phys. Express 9(6), 065801 (2016).
[Crossref]

Danon, Y.

R. Dahal, K. Ahmed, J. W. Wu, A. Weltz, J. J.-Q. Lu, Y. Danon, and I. B. Bhat, “Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films,” Appl. Phys. Express 9(6), 065801 (2016).
[Crossref]

Dasari, D.

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Dean, C.

G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, “Electron tunneling through atomically flat and ultrathin hexagonal boron nitride,” Appl. Phys. Lett. 99(24), 243114 (2011).
[Crossref]

Dhara, S.

C. Chakraborty, K. M. Goodfellow, S. Dhara, A. Yoshimura, V. Meunier, and A. N. Vamivakas, “Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure,” Nano Lett. 17(4), 2253–2258 (2017).
[Crossref] [PubMed]

Du, X. Z.

X. Z. Du, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Layer number dependent optical properties of multilayer hexagonal BN epilayers,” Appl. Phys. Lett. 110(9), 092102 (2017).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride,” Appl. Phys. Lett. 111(13), 132106 (2017).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origins of near band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 108(5), 052106 (2016).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origin of deep-level impurity transitions in hexagonal boron nitride,” Appl. Phys. Lett. 106(2), 021110 (2015).
[Crossref]

Ducastelle, F.

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

Eaves, L.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Efetov, D. K.

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

Elbadawi, C.

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

Englund, D.

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

Englund, D. R.

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

Ferrari, A. C.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Finkler, A.

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Fiori, G.

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref] [PubMed]

Ford, M. J.

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nat. Nanotechnol. 11(1), 37–41 (2016).
[Crossref] [PubMed]

Fox, A. M.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Fronzi, M.

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

Furchi, M. M.

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

Gao, Y.

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

Geim, A. K.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Gil, B.

A. Segura, L. Artús, R. Cuscó, T. Taniguchi, G. Cassabois, and B. Gil, “Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range,” Phys. Rev. Mater. 2(2), 024001 (2018).
[Crossref]

G. Cassabois, P. Valvin, and B. Gil, “Hexagonal boron nitride is an indirect bandgap semiconductor,” Nat. Photonics 10(4), 262–266 (2016).
[Crossref]

Giubileo, F.

F. Giubileo, A. D. Bartolomeo, L. Iemmo, G. Luongo, and F. Urban, “Field emission from carbon nanostructures,” Appl. Sci. (Basel) 8(4), 526 (2018).
[Crossref]

Goldberger, J. E.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Goodfellow, K. M.

C. Chakraborty, K. M. Goodfellow, S. Dhara, A. Yoshimura, V. Meunier, and A. N. Vamivakas, “Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure,” Nano Lett. 17(4), 2253–2258 (2017).
[Crossref] [PubMed]

Gopalakrishnan, K.

C. N. Rao, K. Gopalakrishnan, and U. Maitra, “Comparative study of potential applications of graphene, MoS2, and other two-dimensional materials in energy devices, sensors, and related areas,” ACS Appl. Mater. Interfaces 7(15), 7809–7832 (2015).
[Crossref] [PubMed]

Gorbachev, R. V.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Grosso, G.

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

Gui, X.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium‐assisted p‐type doping for ZnO homojunction light-emitting devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Guo, L. Q.

L. Q. Zhu, Y. H. Liu, H. L. Zhang, H. Xiao, and L. Q. Guo, “Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications,” Appl. Surf. Sci. 288, 430–434 (2014).
[Crossref]

Gupta, J. A.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Gutiérrez, H. R.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Hallett, D.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Hamby, D. W.

D. W. Hamby, D. A. Lucca, M. J. Klopfstein, and G. Cantwell, “Temperature dependent exciton photoluminescence of bulk ZnO,” J. Appl. Phys. 93(6), 3214–3217 (2003).
[Crossref]

Hassan, J.

R. Y. Khosa, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan, and E. Ö. Sveinbjörnsson, “Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC,” AIP Adv. 8(2), 025304 (2018).
[Crossref]

Hattori, Y.

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride,” Appl. Phys. Lett. 109(25), 253111 (2016).
[Crossref]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride,” ACS Appl. Mater. Interfaces 8(41), 27877–27884 (2016).
[Crossref] [PubMed]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal boron nitride,” ACS Nano 9(1), 916–921 (2015).
[Crossref] [PubMed]

Heinz, T. F.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Hollen, S. M.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Hone, J.

M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
[Crossref] [PubMed]

G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, “Electron tunneling through atomically flat and ultrathin hexagonal boron nitride,” Appl. Phys. Lett. 99(24), 243114 (2011).
[Crossref]

Hong, S. S.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Huang, J.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Hui, F.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Hwang, D.-K.

J.-H. Lim, C.-K. Kang, K.-K. Kim, I.-K. Park, D.-K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high‐temperature radiofrequency sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[Crossref]

Iannaccone, G.

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref] [PubMed]

Iemmo, L.

F. Giubileo, A. D. Bartolomeo, L. Iemmo, G. Luongo, and F. Urban, “Field emission from carbon nanostructures,” Appl. Sci. (Basel) 8(4), 526 (2018).
[Crossref]

Im, D.-G.

G. Noh, D. Choi, J.-H. Kim, D.-G. Im, Y.-H. Kim, H. Seo, and J. Lee, “Stark tuning of single-photon emitters in hexagonal boron nitride,” Nano Lett. 18(8), 4710–4715 (2018).
[Crossref] [PubMed]

Ismach, A. F.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Itskevich, I. E.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Jalil, R.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Jarillo-Herrero, P.

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

Jiang, H. X.

X. Z. Du, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Layer number dependent optical properties of multilayer hexagonal BN epilayers,” Appl. Phys. Lett. 110(9), 092102 (2017).
[Crossref]

H. X. Jiang and J. Y. Lin, “Review—hexagonal boron nitride epilayers: growth, optical properties and device applications,” ECS J. Solid State Sci. Technol. 6(2), Q3012–Q3021 (2017).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride,” Appl. Phys. Lett. 111(13), 132106 (2017).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origins of near band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 108(5), 052106 (2016).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origin of deep-level impurity transitions in hexagonal boron nitride,” Appl. Phys. Lett. 106(2), 021110 (2015).
[Crossref]

H. X. Jiang and J. Y. Lin, “Hexagonal boron nitride for deep ultraviolet photonic devices,” Semicond. Sci. Technol. 29(8), 084003 (2014).
[Crossref]

Jiang, L.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Jing, X.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Johnston-Halperin, E.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Juodkazis, S.

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

Kalantar-Zadeh, K.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Kanda, H.

K. Watanabe, T. Taniguchi, T. Kuroda, and H. Kanda, “Effects of deformation on band-edge luminescence of hexagonal boron nitride single crystals,” Appl. Phys. Lett. 89(14), 141902 (2006).
[Crossref]

K. Watanabe, T. Taniguchi, and H. Kanda, “Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal,” Nat. Mater. 3(6), 404–409 (2004).
[Crossref] [PubMed]

Kanemitsu, Y.

Y. Kanemitsu, “Efficient light emission from crystalline and amorphous silicon nanostructures,” J. Lumin. 100(1-4), 209–217 (2002).
[Crossref]

Kang, C.-K.

J.-H. Lim, C.-K. Kang, K.-K. Kim, I.-K. Park, D.-K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high‐temperature radiofrequency sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[Crossref]

Karhu, R.

R. Y. Khosa, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan, and E. Ö. Sveinbjörnsson, “Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC,” AIP Adv. 8(2), 025304 (2018).
[Crossref]

Katsnelson, M. I.

M. Bokdam, G. Brocks, M. I. Katsnelson, and P. J. Kelly, “Schottky barriers at hexagonal boron nitride/metal interfaces: A first-principles study,” Phys. Rev. B Condens. Matter Mater. Phys. 90(8), 085415 (2014).
[Crossref]

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Kelly, P. J.

M. Bokdam, G. Brocks, M. I. Katsnelson, and P. J. Kelly, “Schottky barriers at hexagonal boron nitride/metal interfaces: A first-principles study,” Phys. Rev. B Condens. Matter Mater. Phys. 90(8), 085415 (2014).
[Crossref]

Khosa, R. Y.

R. Y. Khosa, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan, and E. Ö. Sveinbjörnsson, “Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC,” AIP Adv. 8(2), 025304 (2018).
[Crossref]

Kianinia, M.

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

Kim, J.-H.

G. Noh, D. Choi, J.-H. Kim, D.-G. Im, Y.-H. Kim, H. Seo, and J. Lee, “Stark tuning of single-photon emitters in hexagonal boron nitride,” Nano Lett. 18(8), 4710–4715 (2018).
[Crossref] [PubMed]

Kim, K.-K.

J.-H. Lim, C.-K. Kang, K.-K. Kim, I.-K. Park, D.-K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high‐temperature radiofrequency sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[Crossref]

Kim, P.

M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
[Crossref] [PubMed]

G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, “Electron tunneling through atomically flat and ultrathin hexagonal boron nitride,” Appl. Phys. Lett. 99(24), 243114 (2011).
[Crossref]

Kim, Y.

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Kim, Y.-H.

G. Noh, D. Choi, J.-H. Kim, D.-G. Im, Y.-H. Kim, H. Seo, and J. Lee, “Stark tuning of single-photon emitters in hexagonal boron nitride,” Nano Lett. 18(8), 4710–4715 (2018).
[Crossref] [PubMed]

Kis, A.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Klopfstein, M. J.

D. W. Hamby, D. A. Lucca, M. J. Klopfstein, and G. Cantwell, “Temperature dependent exciton photoluminescence of bulk ZnO,” J. Appl. Phys. 93(6), 3214–3217 (2003).
[Crossref]

Koperski, M.

M. Koperski, K. Nogajewski, and M. Potemski, “Single photon emitters in boron nitride: More than a supplementary material,” Opt. Commun. 411, 158–165 (2018).
[Crossref]

Koppens, F. H. L.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Kubota, Y.

Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, “Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure,” Science 317(5840), 932–934 (2007).
[Crossref] [PubMed]

Kuno, M.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Kuroda, T.

K. Watanabe, T. Taniguchi, T. Kuroda, and H. Kanda, “Effects of deformation on band-edge luminescence of hexagonal boron nitride single crystals,” Appl. Phys. Lett. 89(14), 141902 (2006).
[Crossref]

Lanza, M.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

La-Placa, M.-G.

G. Longo, M.-G. La-Placa, M. Sessolo, and H. J. Bolink, “High photoluminescence quantum yields in organic semiconductor–perovskite composite thin films,” ChemSusChem 10(19), 3788–3793 (2017).
[Crossref] [PubMed]

Laturia, A.

A. Laturia, M. L. Van de Put, and W. G. Vandenberghe, “Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk,” NPJ 2D Mater. Appl. 2(1), 6 (2018).
[Crossref]

Lee, C.

G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, “Electron tunneling through atomically flat and ultrathin hexagonal boron nitride,” Appl. Phys. Lett. 99(24), 243114 (2011).
[Crossref]

Lee, D.

D. Lee and S. H. Song, “Ultra-thin ultraviolet cathodoluminescent device based on exfoliated hexagonal boron nitride,” RSC Advances 7(13), 7831–7835 (2017).
[Crossref]

Lee, D.-Y.

M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
[Crossref] [PubMed]

Lee, G.-H.

M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
[Crossref] [PubMed]

G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, “Electron tunneling through atomically flat and ultrathin hexagonal boron nitride,” Appl. Phys. Lett. 99(24), 243114 (2011).
[Crossref]

Lee, J.

G. Noh, D. Choi, J.-H. Kim, D.-G. Im, Y.-H. Kim, H. Seo, and J. Lee, “Stark tuning of single-photon emitters in hexagonal boron nitride,” Nano Lett. 18(8), 4710–4715 (2018).
[Crossref] [PubMed]

Lee, S. H.

M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
[Crossref] [PubMed]

Leist, J.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Li, J.

X. Z. Du, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Layer number dependent optical properties of multilayer hexagonal BN epilayers,” Appl. Phys. Lett. 110(9), 092102 (2017).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride,” Appl. Phys. Lett. 111(13), 132106 (2017).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origins of near band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 108(5), 052106 (2016).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origin of deep-level impurity transitions in hexagonal boron nitride,” Appl. Phys. Lett. 106(2), 021110 (2015).
[Crossref]

Li, Y.

Y. Li, Y.-L. Li, B. Sa, and R. Ahuja, “Review of two-dimensional materials for photocatalytic water splitting from a theoretical perspective,” Catal. Sci. Technol. 7(3), 545–559 (2017).
[Crossref]

Li, Y.-L.

Y. Li, Y.-L. Li, B. Sa, and R. Ahuja, “Review of two-dimensional materials for photocatalytic water splitting from a theoretical perspective,” Catal. Sci. Technol. 7(3), 545–559 (2017).
[Crossref]

Lienhard, B.

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

Lim, J.-H.

J.-H. Lim, C.-K. Kang, K.-K. Kim, I.-K. Park, D.-K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high‐temperature radiofrequency sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[Crossref]

Lin, J. Y.

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride,” Appl. Phys. Lett. 111(13), 132106 (2017).
[Crossref]

H. X. Jiang and J. Y. Lin, “Review—hexagonal boron nitride epilayers: growth, optical properties and device applications,” ECS J. Solid State Sci. Technol. 6(2), Q3012–Q3021 (2017).
[Crossref]

X. Z. Du, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Layer number dependent optical properties of multilayer hexagonal BN epilayers,” Appl. Phys. Lett. 110(9), 092102 (2017).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origins of near band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 108(5), 052106 (2016).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origin of deep-level impurity transitions in hexagonal boron nitride,” Appl. Phys. Lett. 106(2), 021110 (2015).
[Crossref]

H. X. Jiang and J. Y. Lin, “Hexagonal boron nitride for deep ultraviolet photonic devices,” Semicond. Sci. Technol. 29(8), 084003 (2014).
[Crossref]

Liu, W.-B.

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

Liu, Y. H.

L. Q. Zhu, Y. H. Liu, H. L. Zhang, H. Xiao, and L. Q. Guo, “Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications,” Appl. Surf. Sci. 288, 430–434 (2014).
[Crossref]

Liu, Z.

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

Liu, Z. Q.

Z. Q. Liu, W. K. Chim, S. Y. Chiam, J. S. Pan, and C. M. Ng, “An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point,” J. Mater. Chem. 22(34), 17887–17892 (2012).
[Crossref]

Lobo, C.

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

Lobo, C. J.

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

Loiseau, A.

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

Longo, G.

G. Longo, M.-G. La-Placa, M. Sessolo, and H. J. Bolink, “High photoluminescence quantum yields in organic semiconductor–perovskite composite thin films,” ChemSusChem 10(19), 3788–3793 (2017).
[Crossref] [PubMed]

Lu, G.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Lu, J. J.-Q.

R. Dahal, K. Ahmed, J. W. Wu, A. Weltz, J. J.-Q. Lu, Y. Danon, and I. B. Bhat, “Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films,” Appl. Phys. Express 9(6), 065801 (2016).
[Crossref]

Lucca, D. A.

D. W. Hamby, D. A. Lucca, M. J. Klopfstein, and G. Cantwell, “Temperature dependent exciton photoluminescence of bulk ZnO,” J. Appl. Phys. 93(6), 3214–3217 (2003).
[Crossref]

Luongo, G.

F. Giubileo, A. D. Bartolomeo, L. Iemmo, G. Luongo, and F. Urban, “Field emission from carbon nanostructures,” Appl. Sci. (Basel) 8(4), 526 (2018).
[Crossref]

Ma, L.-P.

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

Ma, T.

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

Ma, X.

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

Maitra, U.

C. N. Rao, K. Gopalakrishnan, and U. Maitra, “Comparative study of potential applications of graphene, MoS2, and other two-dimensional materials in energy devices, sensors, and related areas,” ACS Appl. Mater. Interfaces 7(15), 7809–7832 (2015).
[Crossref] [PubMed]

Mayorov, A. S.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

McIntyre, P. C.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Mei, S.

A. Ranjan, N. Raghavan, S. J. O’Shea, S. Mei, M. Bosman, K. Shubhakar, and K. L. Pey, “Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics,” 2018 IEEE International Reliability Physics Symposium (IRPS) (2018).
[Crossref]

Meunier, V.

C. Chakraborty, K. M. Goodfellow, S. Dhara, A. Yoshimura, V. Meunier, and A. N. Vamivakas, “Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure,” Nano Lett. 17(4), 2253–2258 (2017).
[Crossref] [PubMed]

Miya, K.

K. Watanabe, T. Taniguchi, T. Niiyama, K. Miya, and M. Taniguchi, “Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride,” Nat. Photonics 3(10), 591–594 (2009).
[Crossref]

Moon, H.

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

Morozov, S. V.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Mueller, T.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Nagashio, K.

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride,” ACS Appl. Mater. Interfaces 8(41), 27877–27884 (2016).
[Crossref] [PubMed]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride,” Appl. Phys. Lett. 109(25), 253111 (2016).
[Crossref]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal boron nitride,” ACS Nano 9(1), 916–921 (2015).
[Crossref] [PubMed]

Neto, A. H. C.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Neumaier, D.

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref] [PubMed]

Ng, C. M.

Z. Q. Liu, W. K. Chim, S. Y. Chiam, J. S. Pan, and C. M. Ng, “An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point,” J. Mater. Chem. 22(34), 17887–17892 (2012).
[Crossref]

Niiyama, T.

K. Watanabe, T. Taniguchi, T. Niiyama, K. Miya, and M. Taniguchi, “Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride,” Nat. Photonics 3(10), 591–594 (2009).
[Crossref]

Nogajewski, K.

M. Koperski, K. Nogajewski, and M. Potemski, “Single photon emitters in boron nitride: More than a supplementary material,” Opt. Commun. 411, 158–165 (2018).
[Crossref]

Noh, G.

G. Noh, D. Choi, J.-H. Kim, D.-G. Im, Y.-H. Kim, H. Seo, and J. Lee, “Stark tuning of single-photon emitters in hexagonal boron nitride,” Nano Lett. 18(8), 4710–4715 (2018).
[Crossref] [PubMed]

Novoselov, K. S.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

O’Shea, S. J.

A. Ranjan, N. Raghavan, S. J. O’Shea, S. Mei, M. Bosman, K. Shubhakar, and K. L. Pey, “Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics,” 2018 IEEE International Reliability Physics Symposium (IRPS) (2018).
[Crossref]

Palacios, T.

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref] [PubMed]

Palumbo, F.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Pan, C.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Pan, J. S.

Z. Q. Liu, W. K. Chim, S. Y. Chiam, J. S. Pan, and C. M. Ng, “An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point,” J. Mater. Chem. 22(34), 17887–17892 (2012).
[Crossref]

Park, I.-K.

J.-H. Lim, C.-K. Kang, K.-K. Kim, I.-K. Park, D.-K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high‐temperature radiofrequency sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[Crossref]

Park, S. J.

J.-H. Lim, C.-K. Kang, K.-K. Kim, I.-K. Park, D.-K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high‐temperature radiofrequency sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[Crossref]

Peres, N. M. R.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Pey, K. L.

A. Ranjan, N. Raghavan, S. J. O’Shea, S. Mei, M. Bosman, K. Shubhakar, and K. L. Pey, “Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics,” 2018 IEEE International Reliability Physics Symposium (IRPS) (2018).
[Crossref]

Plashnitsa, V. V.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Plaud, A.

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

Polini, M.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Ponomarenko, L. A.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Potemski, M.

M. Koperski, K. Nogajewski, and M. Potemski, “Single photon emitters in boron nitride: More than a supplementary material,” Opt. Commun. 411, 158–165 (2018).
[Crossref]

Prtljaga, N.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Raghavan, N.

A. Ranjan, N. Raghavan, S. J. O’Shea, S. Mei, M. Bosman, K. Shubhakar, and K. L. Pey, “Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics,” 2018 IEEE International Reliability Physics Symposium (IRPS) (2018).
[Crossref]

Ranjan, A.

A. Ranjan, N. Raghavan, S. J. O’Shea, S. Mei, M. Bosman, K. Shubhakar, and K. L. Pey, “Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics,” 2018 IEEE International Reliability Physics Symposium (IRPS) (2018).
[Crossref]

Rao, C. N.

C. N. Rao, K. Gopalakrishnan, and U. Maitra, “Comparative study of potential applications of graphene, MoS2, and other two-dimensional materials in energy devices, sensors, and related areas,” ACS Appl. Mater. Interfaces 7(15), 7809–7832 (2015).
[Crossref] [PubMed]

Ren, W.

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

Robinson, R. D.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Rorsman, N.

R. Y. Khosa, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan, and E. Ö. Sveinbjörnsson, “Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC,” AIP Adv. 8(2), 025304 (2018).
[Crossref]

Royall, B.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Ruoff, R. S.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Sa, B.

Y. Li, Y.-L. Li, B. Sa, and R. Ahuja, “Review of two-dimensional materials for photocatalytic water splitting from a theoretical perspective,” Catal. Sci. Technol. 7(3), 545–559 (2017).
[Crossref]

Salahuddin, S.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Schedin, F.

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Schué, L.

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

Seabaugh, A.

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref] [PubMed]

Segura, A.

A. Segura, L. Artús, R. Cuscó, T. Taniguchi, G. Cassabois, and B. Gil, “Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range,” Phys. Rev. Mater. 2(2), 024001 (2018).
[Crossref]

Seniutinas, G.

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

Seo, H.

G. Noh, D. Choi, J.-H. Kim, D.-G. Im, Y.-H. Kim, H. Seo, and J. Lee, “Stark tuning of single-photon emitters in hexagonal boron nitride,” Nano Lett. 18(8), 4710–4715 (2018).
[Crossref] [PubMed]

Sessolo, M.

G. Longo, M.-G. La-Placa, M. Sessolo, and H. J. Bolink, “High photoluminescence quantum yields in organic semiconductor–perovskite composite thin films,” ChemSusChem 10(19), 3788–3793 (2017).
[Crossref] [PubMed]

Shan, J.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Shepard, K. L.

G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, “Electron tunneling through atomically flat and ultrathin hexagonal boron nitride,” Appl. Phys. Lett. 99(24), 243114 (2011).
[Crossref]

Shi, L.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Shi, Y.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Shubhakar, K.

A. Ranjan, N. Raghavan, S. J. O’Shea, S. Mei, M. Bosman, K. Shubhakar, and K. L. Pey, “Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics,” 2018 IEEE International Reliability Physics Symposium (IRPS) (2018).
[Crossref]

Skolnick, M. S.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Smet, J. H.

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Song, S. H.

D. Lee and S. H. Song, “Ultra-thin ultraviolet cathodoluminescent device based on exfoliated hexagonal boron nitride,” RSC Advances 7(13), 7831–7835 (2017).
[Crossref]

Spencer, M. G.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Sponza, L.

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

Stampfl, C.

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

Strano, M. S.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Stuhlhofer, B.

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Sveinbjörnsson, E. Ö.

R. Y. Khosa, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan, and E. Ö. Sveinbjörnsson, “Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC,” AIP Adv. 8(2), 025304 (2018).
[Crossref]

Tang, K.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Tang, Z.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium‐assisted p‐type doping for ZnO homojunction light-emitting devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Taniguchi, M.

K. Watanabe, T. Taniguchi, T. Niiyama, K. Miya, and M. Taniguchi, “Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride,” Nat. Photonics 3(10), 591–594 (2009).
[Crossref]

Taniguchi, T.

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

A. Segura, L. Artús, R. Cuscó, T. Taniguchi, G. Cassabois, and B. Gil, “Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range,” Phys. Rev. Mater. 2(2), 024001 (2018).
[Crossref]

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride,” Appl. Phys. Lett. 109(25), 253111 (2016).
[Crossref]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride,” ACS Appl. Mater. Interfaces 8(41), 27877–27884 (2016).
[Crossref] [PubMed]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal boron nitride,” ACS Nano 9(1), 916–921 (2015).
[Crossref] [PubMed]

K. Watanabe, T. Taniguchi, T. Niiyama, K. Miya, and M. Taniguchi, “Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride,” Nat. Photonics 3(10), 591–594 (2009).
[Crossref]

Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, “Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure,” Science 317(5840), 932–934 (2007).
[Crossref] [PubMed]

K. Watanabe, T. Taniguchi, T. Kuroda, and H. Kanda, “Effects of deformation on band-edge luminescence of hexagonal boron nitride single crystals,” Appl. Phys. Lett. 89(14), 141902 (2006).
[Crossref]

K. Watanabe, T. Taniguchi, and H. Kanda, “Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal,” Nat. Mater. 3(6), 404–409 (2004).
[Crossref] [PubMed]

Tawfik, S. A.

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

Terrones, M.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Thorsteinsson, E. B.

R. Y. Khosa, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan, and E. Ö. Sveinbjörnsson, “Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC,” AIP Adv. 8(2), 025304 (2018).
[Crossref]

Toth, M.

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nat. Nanotechnol. 11(1), 37–41 (2016).
[Crossref] [PubMed]

Totonjian, D.

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

Tran, T. T.

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nat. Nanotechnol. 11(1), 37–41 (2016).
[Crossref] [PubMed]

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

Tsuda, O.

Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, “Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure,” Science 317(5840), 932–934 (2007).
[Crossref] [PubMed]

Uddin, M. R.

X. Z. Du, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Layer number dependent optical properties of multilayer hexagonal BN epilayers,” Appl. Phys. Lett. 110(9), 092102 (2017).
[Crossref]

Uppal, H.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Urban, F.

F. Giubileo, A. D. Bartolomeo, L. Iemmo, G. Luongo, and F. Urban, “Field emission from carbon nanostructures,” Appl. Sci. (Basel) 8(4), 526 (2018).
[Crossref]

Vaitiekus, D.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Valvin, P.

G. Cassabois, P. Valvin, and B. Gil, “Hexagonal boron nitride is an indirect bandgap semiconductor,” Nat. Photonics 10(4), 262–266 (2016).
[Crossref]

Vamivakas, A. N.

C. Chakraborty, K. M. Goodfellow, S. Dhara, A. Yoshimura, V. Meunier, and A. N. Vamivakas, “Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure,” Nano Lett. 17(4), 2253–2258 (2017).
[Crossref] [PubMed]

Van de Put, M. L.

A. Laturia, M. L. Van de Put, and W. G. Vandenberghe, “Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk,” NPJ 2D Mater. Appl. 2(1), 6 (2018).
[Crossref]

Vandenberghe, W. G.

A. Laturia, M. L. Van de Put, and W. G. Vandenberghe, “Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk,” NPJ 2D Mater. Appl. 2(1), 6 (2018).
[Crossref]

Villena, M. A.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Vitiello, M. S.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Wang, H.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Wang, Q. H.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Wang, X.

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

Watanabe, K.

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride,” ACS Appl. Mater. Interfaces 8(41), 27877–27884 (2016).
[Crossref] [PubMed]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride,” Appl. Phys. Lett. 109(25), 253111 (2016).
[Crossref]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal boron nitride,” ACS Nano 9(1), 916–921 (2015).
[Crossref] [PubMed]

K. Watanabe, T. Taniguchi, T. Niiyama, K. Miya, and M. Taniguchi, “Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride,” Nat. Photonics 3(10), 591–594 (2009).
[Crossref]

Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, “Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure,” Science 317(5840), 932–934 (2007).
[Crossref] [PubMed]

K. Watanabe, T. Taniguchi, T. Kuroda, and H. Kanda, “Effects of deformation on band-edge luminescence of hexagonal boron nitride single crystals,” Appl. Phys. Lett. 89(14), 141902 (2006).
[Crossref]

K. Watanabe, T. Taniguchi, and H. Kanda, “Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal,” Nat. Mater. 3(6), 404–409 (2004).
[Crossref] [PubMed]

Weltz, A.

R. Dahal, K. Ahmed, J. W. Wu, A. Weltz, J. J.-Q. Lu, Y. Danon, and I. B. Bhat, “Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films,” Appl. Phys. Express 9(6), 065801 (2016).
[Crossref]

Wilson, L. R.

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

Windl, W.

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

Winters, M.

R. Y. Khosa, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan, and E. Ö. Sveinbjörnsson, “Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC,” AIP Adv. 8(2), 025304 (2018).
[Crossref]

Wrachtrup, J.

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Wu, J. W.

R. Dahal, K. Ahmed, J. W. Wu, A. Weltz, J. J.-Q. Lu, Y. Danon, and I. B. Bhat, “Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films,” Appl. Phys. Express 9(6), 065801 (2016).
[Crossref]

Wu, Q.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Wu, T.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Wu, Y.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium‐assisted p‐type doping for ZnO homojunction light-emitting devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Xiao, H.

L. Q. Zhu, Y. H. Liu, H. L. Zhang, H. Xiao, and L. Q. Guo, “Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications,” Appl. Surf. Sci. 288, 430–434 (2014).
[Crossref]

Xie, X.

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

Yoo, W. J.

M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
[Crossref] [PubMed]

Yoshimura, A.

C. Chakraborty, K. M. Goodfellow, S. Dhara, A. Yoshimura, V. Meunier, and A. N. Vamivakas, “Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure,” Nano Lett. 17(4), 2253–2258 (2017).
[Crossref] [PubMed]

Yu, Y.-J.

M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
[Crossref] [PubMed]

G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, “Electron tunneling through atomically flat and ultrathin hexagonal boron nitride,” Appl. Phys. Lett. 99(24), 243114 (2011).
[Crossref]

Zappe, A.

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Zhang, H. L.

L. Q. Zhu, Y. H. Liu, H. L. Zhang, H. Xiao, and L. Q. Guo, “Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications,” Appl. Surf. Sci. 288, 430–434 (2014).
[Crossref]

Zhang, Y.

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

Zhu, H.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium‐assisted p‐type doping for ZnO homojunction light-emitting devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Zhu, L. Q.

L. Q. Zhu, Y. H. Liu, H. L. Zhang, H. Xiao, and L. Q. Guo, “Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications,” Appl. Surf. Sci. 288, 430–434 (2014).
[Crossref]

Zhu, Y.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium‐assisted p‐type doping for ZnO homojunction light-emitting devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

ACS Appl. Mater. Interfaces (4)

C. N. Rao, K. Gopalakrishnan, and U. Maitra, “Comparative study of potential applications of graphene, MoS2, and other two-dimensional materials in energy devices, sensors, and related areas,” ACS Appl. Mater. Interfaces 7(15), 7809–7832 (2015).
[Crossref] [PubMed]

S. Choi, T. T. Tran, C. Elbadawi, C. Lobo, X. Wang, S. Juodkazis, G. Seniutinas, M. Toth, and I. Aharonovich, “Engineering and localization of quantum emitters in large hexagonal boron nitride layers,” ACS Appl. Mater. Interfaces 8(43), 29642–29648 (2016).
[Crossref] [PubMed]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride,” ACS Appl. Mater. Interfaces 8(41), 27877–27884 (2016).
[Crossref] [PubMed]

L. Jiang, Y. Shi, F. Hui, K. Tang, Q. Wu, C. Pan, X. Jing, H. Uppal, F. Palumbo, G. Lu, T. Wu, H. Wang, M. A. Villena, X. Xie, P. C. McIntyre, and M. Lanza, “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride,” ACS Appl. Mater. Interfaces 9(45), 39758–39770 (2017).
[Crossref] [PubMed]

ACS Nano (4)

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

T. T. Tran, C. Elbadawi, D. Totonjian, C. J. Lobo, G. Grosso, H. Moon, D. R. Englund, M. J. Ford, I. Aharonovich, and M. Toth, “Robust multicolor single photon emission from point defects in hexagonal boron nitride,” ACS Nano 10(8), 7331–7338 (2016).
[Crossref] [PubMed]

Y. Gao, W. Ren, T. Ma, Z. Liu, Y. Zhang, W.-B. Liu, L.-P. Ma, X. Ma, and H.-M. Cheng, “Repeated and controlled growth of monolayer, bilayer and few-layer hexagonal boron nitride on Pt foils,” ACS Nano 7(6), 5199–5206 (2013).
[Crossref] [PubMed]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Layer-by-layer dielectric breakdown of hexagonal boron nitride,” ACS Nano 9(1), 916–921 (2015).
[Crossref] [PubMed]

Adv. Funct. Mater. (1)

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium‐assisted p‐type doping for ZnO homojunction light-emitting devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Adv. Mater. (1)

J.-H. Lim, C.-K. Kang, K.-K. Kim, I.-K. Park, D.-K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high‐temperature radiofrequency sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[Crossref]

AIP Adv. (1)

R. Y. Khosa, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan, and E. Ö. Sveinbjörnsson, “Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC,” AIP Adv. 8(2), 025304 (2018).
[Crossref]

Appl. Phys. Express (1)

R. Dahal, K. Ahmed, J. W. Wu, A. Weltz, J. J.-Q. Lu, Y. Danon, and I. B. Bhat, “Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films,” Appl. Phys. Express 9(6), 065801 (2016).
[Crossref]

Appl. Phys. Lett. (8)

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride,” Appl. Phys. Lett. 111(13), 132106 (2017).
[Crossref]

Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, “Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride,” Appl. Phys. Lett. 109(25), 253111 (2016).
[Crossref]

C. Bentham, D. Hallett, N. Prtljaga, B. Royall, D. Vaitiekus, R. J. Coles, E. Clarke, A. M. Fox, M. S. Skolnick, I. E. Itskevich, and L. R. Wilson, “Single-photon electroluminescence for on-chip quantum networks,” Appl. Phys. Lett. 109(16), 161101 (2016).
[Crossref]

K. Watanabe, T. Taniguchi, T. Kuroda, and H. Kanda, “Effects of deformation on band-edge luminescence of hexagonal boron nitride single crystals,” Appl. Phys. Lett. 89(14), 141902 (2006).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origin of deep-level impurity transitions in hexagonal boron nitride,” Appl. Phys. Lett. 106(2), 021110 (2015).
[Crossref]

X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origins of near band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 108(5), 052106 (2016).
[Crossref]

G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, “Electron tunneling through atomically flat and ultrathin hexagonal boron nitride,” Appl. Phys. Lett. 99(24), 243114 (2011).
[Crossref]

X. Z. Du, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Layer number dependent optical properties of multilayer hexagonal BN epilayers,” Appl. Phys. Lett. 110(9), 092102 (2017).
[Crossref]

Appl. Sci. (Basel) (1)

F. Giubileo, A. D. Bartolomeo, L. Iemmo, G. Luongo, and F. Urban, “Field emission from carbon nanostructures,” Appl. Sci. (Basel) 8(4), 526 (2018).
[Crossref]

Appl. Surf. Sci. (1)

L. Q. Zhu, Y. H. Liu, H. L. Zhang, H. Xiao, and L. Q. Guo, “Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications,” Appl. Surf. Sci. 288, 430–434 (2014).
[Crossref]

Catal. Sci. Technol. (1)

Y. Li, Y.-L. Li, B. Sa, and R. Ahuja, “Review of two-dimensional materials for photocatalytic water splitting from a theoretical perspective,” Catal. Sci. Technol. 7(3), 545–559 (2017).
[Crossref]

ChemSusChem (1)

G. Longo, M.-G. La-Placa, M. Sessolo, and H. J. Bolink, “High photoluminescence quantum yields in organic semiconductor–perovskite composite thin films,” ChemSusChem 10(19), 3788–3793 (2017).
[Crossref] [PubMed]

ECS J. Solid State Sci. Technol. (1)

H. X. Jiang and J. Y. Lin, “Review—hexagonal boron nitride epilayers: growth, optical properties and device applications,” ECS J. Solid State Sci. Technol. 6(2), Q3012–Q3021 (2017).
[Crossref]

J. Appl. Phys. (1)

D. W. Hamby, D. A. Lucca, M. J. Klopfstein, and G. Cantwell, “Temperature dependent exciton photoluminescence of bulk ZnO,” J. Appl. Phys. 93(6), 3214–3217 (2003).
[Crossref]

J. Lumin. (1)

Y. Kanemitsu, “Efficient light emission from crystalline and amorphous silicon nanostructures,” J. Lumin. 100(1-4), 209–217 (2002).
[Crossref]

J. Mater. Chem. (1)

Z. Q. Liu, W. K. Chim, S. Y. Chiam, J. S. Pan, and C. M. Ng, “An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point,” J. Mater. Chem. 22(34), 17887–17892 (2012).
[Crossref]

Nano Lett. (3)

C. Chakraborty, K. M. Goodfellow, S. Dhara, A. Yoshimura, V. Meunier, and A. N. Vamivakas, “Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure,” Nano Lett. 17(4), 2253–2258 (2017).
[Crossref] [PubMed]

G. Noh, D. Choi, J.-H. Kim, D.-G. Im, Y.-H. Kim, H. Seo, and J. Lee, “Stark tuning of single-photon emitters in hexagonal boron nitride,” Nano Lett. 18(8), 4710–4715 (2018).
[Crossref] [PubMed]

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. C. Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, “Electron tunneling through ultrathin boron nitride crystalline barriers,” Nano Lett. 12(3), 1707–1710 (2012).
[Crossref] [PubMed]

Nanoscale (1)

S. A. Tawfik, S. Ali, M. Fronzi, M. Kianinia, T. T. Tran, C. Stampfl, I. Aharonovich, M. Toth, and M. J. Ford, “First-principles investigation of quantum emission from hBN defects,” Nanoscale 9(36), 13575–13582 (2017).
[Crossref] [PubMed]

Nat. Commun. (2)

G. Grosso, H. Moon, B. Lienhard, S. Ali, D. K. Efetov, M. M. Furchi, P. Jarillo-Herrero, M. J. Ford, I. Aharonovich, and D. Englund, “Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride,” Nat. Commun. 8(1), 705 (2017).
[Crossref] [PubMed]

M. S. Choi, G.-H. Lee, Y.-J. Yu, D.-Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, “Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices,” Nat. Commun. 4(1), 1624 (2013).
[Crossref] [PubMed]

Nat. Mater. (1)

K. Watanabe, T. Taniguchi, and H. Kanda, “Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal,” Nat. Mater. 3(6), 404–409 (2004).
[Crossref] [PubMed]

Nat. Nanotechnol. (4)

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref] [PubMed]

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nat. Nanotechnol. 11(1), 37–41 (2016).
[Crossref] [PubMed]

Nat. Photonics (2)

K. Watanabe, T. Taniguchi, T. Niiyama, K. Miya, and M. Taniguchi, “Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride,” Nat. Photonics 3(10), 591–594 (2009).
[Crossref]

G. Cassabois, P. Valvin, and B. Gil, “Hexagonal boron nitride is an indirect bandgap semiconductor,” Nat. Photonics 10(4), 262–266 (2016).
[Crossref]

NPJ 2D Mater. Appl. (1)

A. Laturia, M. L. Van de Put, and W. G. Vandenberghe, “Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk,” NPJ 2D Mater. Appl. 2(1), 6 (2018).
[Crossref]

Opt. Commun. (1)

M. Koperski, K. Nogajewski, and M. Potemski, “Single photon emitters in boron nitride: More than a supplementary material,” Opt. Commun. 411, 158–165 (2018).
[Crossref]

Phys. Rev. B Condens. Matter Mater. Phys. (1)

M. Bokdam, G. Brocks, M. I. Katsnelson, and P. J. Kelly, “Schottky barriers at hexagonal boron nitride/metal interfaces: A first-principles study,” Phys. Rev. B Condens. Matter Mater. Phys. 90(8), 085415 (2014).
[Crossref]

Phys. Rev. Lett. (1)

L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon, “Bright luminescence from indirect and strongly bound excitons in h-BN,” Phys. Rev. Lett. 122(6), 067401 (2019).
[Crossref] [PubMed]

Phys. Rev. Mater. (1)

A. Segura, L. Artús, R. Cuscó, T. Taniguchi, G. Cassabois, and B. Gil, “Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range,” Phys. Rev. Mater. 2(2), 024001 (2018).
[Crossref]

RSC Advances (1)

D. Lee and S. H. Song, “Ultra-thin ultraviolet cathodoluminescent device based on exfoliated hexagonal boron nitride,” RSC Advances 7(13), 7831–7835 (2017).
[Crossref]

Sci. Rep. (1)

N. Chejanovsky, Y. Kim, A. Zappe, B. Stuhlhofer, T. Taniguchi, K. Watanabe, D. Dasari, A. Finkler, J. H. Smet, and J. Wrachtrup, “Quantum light in curved low dimensional hexagonal boron nitride systems,” Sci. Rep. 7(1), 14758 (2017).
[Crossref] [PubMed]

Science (1)

Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, “Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure,” Science 317(5840), 932–934 (2007).
[Crossref] [PubMed]

Semicond. Sci. Technol. (1)

H. X. Jiang and J. Y. Lin, “Hexagonal boron nitride for deep ultraviolet photonic devices,” Semicond. Sci. Technol. 29(8), 084003 (2014).
[Crossref]

Other (2)

C. Krag and I. J. R. Baumvol, Handbook of Thin Films (Academic, 2002), Chap. 3.

A. Ranjan, N. Raghavan, S. J. O’Shea, S. Mei, M. Bosman, K. Shubhakar, and K. L. Pey, “Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics,” 2018 IEEE International Reliability Physics Symposium (IRPS) (2018).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1 Schematic illustration, structural characteristics and energy band diagrams of Al2O3/h-BN/Al2O3 heterostructure based light emitting device. (a) Schematic illustration of an electrically-driven EL device consisting of a 5-period Al2O3/h-BN multiple heterostructure and a Pt-bottom and a graphene-top electrodes. (b) Raman spectrum of the multilayer CVD-grown h-BN with FWHM of 26.1 cm−1. (c) A cross-sectional BF-STEM and (d) the corresponding HAADF-STEM image of the 5-period Al2O3/h-BN multiple heterostructure on a sapphire substrate. The ideal energy band diagrams (e) before making contacts between a Pt bottom electrode, Al2O3, h-BN, and a graphene top electrode and (f) after making Pt/Al2O3/hBN/Al2O3/Gr heterostructure under a high forward bias.
Fig. 2
Fig. 2 Photoluminescence spectra. Comparison of the PL spectra of the h-BN-only and the Al2O3/h-BN multiple heterostructure samples: (a) PL spectra in DUV wavelength range under 175 nm excitation source at 10K and (b) normalized PL spectra in visible wavelength range under 532 nm excitation source at 77 K. Note that total thickness of h-BN in the Al2O3/h-BN multiple heterostructure is identical to that in the h-BN-only sample.
Fig. 3
Fig. 3 Electroluminescence and electrical characterization. (a) EL spectra from the Al2O3/h-BN multiple heterostructure, the h-BN-only, and the Al2O3-only samples measured at maximum current densities of 2 × 10−4, 8, and 5.7 × 10−3 A cm−2, respectively. (b) J-E curves of the Al2O3-only, the h-BN-only and the Al2O3/h-BN multiple heterostructure based device in logarithmic scale. The inset shows Fowler-Nordheim (F-N) plots of the Al2O3-only sample at high electric field region. The extracted tunneling barrier height of 3.15 eV is close the difference between the CB edge and graphene Fermi-level. A cross-sectional TEM image shows the 18 nm-thick Al2O3 deposited by ALD on Pt. Scale bar is 2 nm. J-E curves of (c) the h-BN-only and (d) the heterostructure based devices in logarithmic scale. Each inset shows linear data fitting for trap assisted tunneling (TAT) and F-N tunneling, respectively.
Fig. 4
Fig. 4 (a) EL spectra showing a red-shift under increasing applied field from 11.91 to 12.54 MV cm−1. Smoothened white solid lines and square dots are drawn to guide the eyes for the peak position. (b) Plot of Stark shift versus local electric field for the spectra shown in (a). The inset image shows the device overlaid with the colored EL emission spots observed by a CCD. Scale bar is 40 μm.

Metrics