Abstract

Erbium doped AlN epilayers (AlN:Er) have been grown by metal organic chemical vapor deposition. The 1.54 µm emission properties were probed by photoluminescence (PL) emission spectroscopy and compared with those of GaN:Er. Optimum intensity of the 1.54 µm emission from AlN:Er was obtained for growth temperature at 1050 °C. It was found that the emission intensity from AlN:Er is higher than that from GaN:Er for above and below energy gap, as well as resonant excitation. A significant narrowing of the infrared Er3+ PL lines was observed when pumping resonantly into an intra-4f transition. The integrated intensity of the 1.54 µm emission shows a decrease by a factor of only 1.2 between 10 K and 300 K.

© 2015 Optical Society of America

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  1. J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061 (2004).
    [Crossref]
  2. M. R. Brown, A. F. J. Cox, W. A. Shand, and J. M. Williams, “The spectroscopy of rare earth doped chalcogenides,” Advances in Quantum Electronics 2, 69–155 (1974).
    [Crossref]
  3. A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compound Semiconductor 6(1), 48 (2000).
  4. H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
    [Crossref]
  5. M. Thaik, U. Hommerich, R. N. Schwartz, R. G. Wilson, and J. M. Zavada, “Photoluminescence spectroscopy of erbium implanted gallium nitride,” Appl. Phys. Lett. 71(18), 2641 (1997).
    [Crossref]
  6. J. T. Torvik, R. J. Feuerstein, J. I. Pankove, C. H. Qiu, and F. Namavar, “Electroluminescence from erbium and oxygen coimplanted GaN,” Appl. Phys. Lett. 69(14), 2098 (1996).
    [Crossref]
  7. P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
    [Crossref]
  8. J. M. Zavada and D. Zhang, “Luminescence properties of erbium in III–V compound semiconductors,” Solid-State Electron. 38(7), 1285–1293 (1995).
    [Crossref]
  9. R. Birkhahn, M. Garter, and A. J. Steckl, “Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates,” Appl. Phys. Lett. 74(15), 2161 (1999).
    [Crossref]
  10. A. J. Neuhalfen and B. W. Wessels, “Thermal quenching of Er3+‐related luminescence in In1−xGaxP,” Appl. Phys. Lett. 60(21), 2657 (1992).
    [Crossref]
  11. C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
    [Crossref]
  12. C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 90(5), 051110 (2007).
    [Crossref]
  13. S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
    [Crossref]
  14. B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91(12), 121117 (2007).
    [Crossref]
  15. R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
    [Crossref]
  16. X. Wu, U. Hommerich, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schawartz, and J. M. Zavada, “Photoluminescence study of Er-doped AlN,” J. Lumin. 72, 284–286 (1997).
    [Crossref]
  17. F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
    [Crossref]
  18. Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
    [Crossref] [PubMed]
  19. T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors,” Appl. Phys. Lett. 101(19), 192106 (2012).
    [Crossref]
  20. T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes,” J. Appl. Phys. 113(12), 123501 (2013).
    [Crossref]
  21. C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Formation energy of optically active Er3+ centers in Er doped GaN,” Appl. Phys. Lett. 101(5), 051114 (2012).
    [Crossref]
  22. R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping,” Appl. Phys. Lett. 105(5), 051106 (2014).
    [Crossref]
  23. H. Rinnert, S. S. Hussain, V. Brien, J. Legrand, and P. Pigeat, “Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering,” J. Lumin. 132(9), 2367–2370 (2012).
    [Crossref]
  24. A. R. Zanatta, C. T. M. Ribeiro, and U. Jahn, “Optoelectronic and structural characteristics of Er-doped amorphous AlN films,” J. Appl. Phys. 98(9), 093514 (2005).
    [Crossref]
  25. U. Hommerich, J. T. Seo, C. R. Abernathy, A. J. Steckl, and J. M. Zavada, “Spectroscopic studies of the visible and infrared luminescence from Er doped GaN,” Mater. Sci. Eng. B 81(1-3), 116–120 (2001).
    [Crossref]

2014 (1)

R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping,” Appl. Phys. Lett. 105(5), 051106 (2014).
[Crossref]

2013 (1)

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes,” J. Appl. Phys. 113(12), 123501 (2013).
[Crossref]

2012 (3)

C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Formation energy of optically active Er3+ centers in Er doped GaN,” Appl. Phys. Lett. 101(5), 051114 (2012).
[Crossref]

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors,” Appl. Phys. Lett. 101(19), 192106 (2012).
[Crossref]

H. Rinnert, S. S. Hussain, V. Brien, J. Legrand, and P. Pigeat, “Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering,” J. Lumin. 132(9), 2367–2370 (2012).
[Crossref]

2007 (2)

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 90(5), 051110 (2007).
[Crossref]

B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91(12), 121117 (2007).
[Crossref]

2006 (3)

F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
[Crossref]

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]

2005 (1)

A. R. Zanatta, C. T. M. Ribeiro, and U. Jahn, “Optoelectronic and structural characteristics of Er-doped amorphous AlN films,” J. Appl. Phys. 98(9), 093514 (2005).
[Crossref]

2004 (1)

J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061 (2004).
[Crossref]

2001 (1)

U. Hommerich, J. T. Seo, C. R. Abernathy, A. J. Steckl, and J. M. Zavada, “Spectroscopic studies of the visible and infrared luminescence from Er doped GaN,” Mater. Sci. Eng. B 81(1-3), 116–120 (2001).
[Crossref]

2000 (1)

A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compound Semiconductor 6(1), 48 (2000).

1999 (1)

R. Birkhahn, M. Garter, and A. J. Steckl, “Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates,” Appl. Phys. Lett. 74(15), 2161 (1999).
[Crossref]

1997 (3)

M. Thaik, U. Hommerich, R. N. Schwartz, R. G. Wilson, and J. M. Zavada, “Photoluminescence spectroscopy of erbium implanted gallium nitride,” Appl. Phys. Lett. 71(18), 2641 (1997).
[Crossref]

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

X. Wu, U. Hommerich, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schawartz, and J. M. Zavada, “Photoluminescence study of Er-doped AlN,” J. Lumin. 72, 284–286 (1997).
[Crossref]

1996 (1)

J. T. Torvik, R. J. Feuerstein, J. I. Pankove, C. H. Qiu, and F. Namavar, “Electroluminescence from erbium and oxygen coimplanted GaN,” Appl. Phys. Lett. 69(14), 2098 (1996).
[Crossref]

1995 (1)

J. M. Zavada and D. Zhang, “Luminescence properties of erbium in III–V compound semiconductors,” Solid-State Electron. 38(7), 1285–1293 (1995).
[Crossref]

1994 (1)

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]

1992 (1)

A. J. Neuhalfen and B. W. Wessels, “Thermal quenching of Er3+‐related luminescence in In1−xGaxP,” Appl. Phys. Lett. 60(21), 2657 (1992).
[Crossref]

1989 (1)

P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]

1983 (1)

H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
[Crossref]

1974 (1)

M. R. Brown, A. F. J. Cox, W. A. Shand, and J. M. Williams, “The spectroscopy of rare earth doped chalcogenides,” Advances in Quantum Electronics 2, 69–155 (1974).
[Crossref]

Abernathy, C. R.

U. Hommerich, J. T. Seo, C. R. Abernathy, A. J. Steckl, and J. M. Zavada, “Spectroscopic studies of the visible and infrared luminescence from Er doped GaN,” Mater. Sci. Eng. B 81(1-3), 116–120 (2001).
[Crossref]

X. Wu, U. Hommerich, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schawartz, and J. M. Zavada, “Photoluminescence study of Er-doped AlN,” J. Lumin. 72, 284–286 (1997).
[Crossref]

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]

Al tahtamouni, T. M.

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes,” J. Appl. Phys. 113(12), 123501 (2013).
[Crossref]

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors,” Appl. Phys. Lett. 101(19), 192106 (2012).
[Crossref]

B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91(12), 121117 (2007).
[Crossref]

Axmann, A.

H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
[Crossref]

Birkhahn, R.

A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compound Semiconductor 6(1), 48 (2000).

R. Birkhahn, M. Garter, and A. J. Steckl, “Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates,” Appl. Phys. Lett. 74(15), 2161 (1999).
[Crossref]

Brien, V.

H. Rinnert, S. S. Hussain, V. Brien, J. Legrand, and P. Pigeat, “Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering,” J. Lumin. 132(9), 2367–2370 (2012).
[Crossref]

Brown, M. R.

M. R. Brown, A. F. J. Cox, W. A. Shand, and J. M. Williams, “The spectroscopy of rare earth doped chalcogenides,” Advances in Quantum Electronics 2, 69–155 (1974).
[Crossref]

Chow, P.

J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061 (2004).
[Crossref]

Cox, A. F. J.

M. R. Brown, A. F. J. Cox, W. A. Shand, and J. M. Williams, “The spectroscopy of rare earth doped chalcogenides,” Advances in Quantum Electronics 2, 69–155 (1974).
[Crossref]

Ennen, H.

H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
[Crossref]

Favennec, P. N.

P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]

Feng, I. W.

R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping,” Appl. Phys. Lett. 105(5), 051106 (2014).
[Crossref]

C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Formation energy of optically active Er3+ centers in Er doped GaN,” Appl. Phys. Lett. 101(5), 051114 (2012).
[Crossref]

Feuerstein, R. J.

J. T. Torvik, R. J. Feuerstein, J. I. Pankove, C. H. Qiu, and F. Namavar, “Electroluminescence from erbium and oxygen coimplanted GaN,” Appl. Phys. Lett. 69(14), 2098 (1996).
[Crossref]

Fu, T.

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]

Garter, M.

A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compound Semiconductor 6(1), 48 (2000).

R. Birkhahn, M. Garter, and A. J. Steckl, “Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates,” Appl. Phys. Lett. 74(15), 2161 (1999).
[Crossref]

Heikenfeld, J.

A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compound Semiconductor 6(1), 48 (2000).

Hertog, B.

J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061 (2004).
[Crossref]

Hommerich, U.

U. Hommerich, J. T. Seo, C. R. Abernathy, A. J. Steckl, and J. M. Zavada, “Spectroscopic studies of the visible and infrared luminescence from Er doped GaN,” Mater. Sci. Eng. B 81(1-3), 116–120 (2001).
[Crossref]

X. Wu, U. Hommerich, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schawartz, and J. M. Zavada, “Photoluminescence study of Er-doped AlN,” J. Lumin. 72, 284–286 (1997).
[Crossref]

M. Thaik, U. Hommerich, R. N. Schwartz, R. G. Wilson, and J. M. Zavada, “Photoluminescence spectroscopy of erbium implanted gallium nitride,” Appl. Phys. Lett. 71(18), 2641 (1997).
[Crossref]

Hömmerich, U.

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

Hui, R.

R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping,” Appl. Phys. Lett. 105(5), 051106 (2014).
[Crossref]

Hussain, S. S.

H. Rinnert, S. S. Hussain, V. Brien, J. Legrand, and P. Pigeat, “Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering,” J. Lumin. 132(9), 2367–2370 (2012).
[Crossref]

Jahn, U.

A. R. Zanatta, C. T. M. Ribeiro, and U. Jahn, “Optoelectronic and structural characteristics of Er-doped amorphous AlN films,” J. Appl. Phys. 98(9), 093514 (2005).
[Crossref]

Jiang, H. X.

R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping,” Appl. Phys. Lett. 105(5), 051106 (2014).
[Crossref]

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes,” J. Appl. Phys. 113(12), 123501 (2013).
[Crossref]

C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Formation energy of optically active Er3+ centers in Er doped GaN,” Appl. Phys. Lett. 101(5), 051114 (2012).
[Crossref]

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors,” Appl. Phys. Lett. 101(19), 192106 (2012).
[Crossref]

B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91(12), 121117 (2007).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 90(5), 051110 (2007).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]

J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061 (2004).
[Crossref]

Jin, S. X.

J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061 (2004).
[Crossref]

Kasu, M.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

L’Halidon, H.

P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]

Le Guillou, Y.

P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]

Lee, D. S.

A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compound Semiconductor 6(1), 48 (2000).

Legrand, J.

H. Rinnert, S. S. Hussain, V. Brien, J. Legrand, and P. Pigeat, “Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering,” J. Lumin. 132(9), 2367–2370 (2012).
[Crossref]

Li, J.

B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91(12), 121117 (2007).
[Crossref]

Liang, J. K.

F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
[Crossref]

Lin, J. Y.

R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping,” Appl. Phys. Lett. 105(5), 051106 (2014).
[Crossref]

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes,” J. Appl. Phys. 113(12), 123501 (2013).
[Crossref]

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors,” Appl. Phys. Lett. 101(19), 192106 (2012).
[Crossref]

C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Formation energy of optically active Er3+ centers in Er doped GaN,” Appl. Phys. Lett. 101(5), 051114 (2012).
[Crossref]

B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91(12), 121117 (2007).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 90(5), 051110 (2007).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]

J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061 (2004).
[Crossref]

Liu, F. S.

F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
[Crossref]

Liu, Q. L.

F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
[Crossref]

Luo, J.

F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
[Crossref]

Mackenzie, J. D.

X. Wu, U. Hommerich, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schawartz, and J. M. Zavada, “Photoluminescence study of Er-doped AlN,” J. Lumin. 72, 284–286 (1997).
[Crossref]

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

Makimoto, T.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

Moutonnet, D.

P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]

Nakarmi, M. L.

B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91(12), 121117 (2007).
[Crossref]

Namavar, F.

J. T. Torvik, R. J. Feuerstein, J. I. Pankove, C. H. Qiu, and F. Namavar, “Electroluminescence from erbium and oxygen coimplanted GaN,” Appl. Phys. Lett. 69(14), 2098 (1996).
[Crossref]

Nepal, N.

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 90(5), 051110 (2007).
[Crossref]

B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91(12), 121117 (2007).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]

J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061 (2004).
[Crossref]

Neuhalfen, A. J.

A. J. Neuhalfen and B. W. Wessels, “Thermal quenching of Er3+‐related luminescence in In1−xGaxP,” Appl. Phys. Lett. 60(21), 2657 (1992).
[Crossref]

Newman, N.

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]

Pankove, J. I.

J. T. Torvik, R. J. Feuerstein, J. I. Pankove, C. H. Qiu, and F. Namavar, “Electroluminescence from erbium and oxygen coimplanted GaN,” Appl. Phys. Lett. 69(14), 2098 (1996).
[Crossref]

Pantha, B. N.

B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91(12), 121117 (2007).
[Crossref]

Pearton, S. J.

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

X. Wu, U. Hommerich, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schawartz, and J. M. Zavada, “Photoluminescence study of Er-doped AlN,” J. Lumin. 72, 284–286 (1997).
[Crossref]

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]

Pigeat, P.

H. Rinnert, S. S. Hussain, V. Brien, J. Legrand, and P. Pigeat, “Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering,” J. Lumin. 132(9), 2367–2370 (2012).
[Crossref]

Pomrenke, G.

H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
[Crossref]

Qiu, C. H.

J. T. Torvik, R. J. Feuerstein, J. I. Pankove, C. H. Qiu, and F. Namavar, “Electroluminescence from erbium and oxygen coimplanted GaN,” Appl. Phys. Lett. 69(14), 2098 (1996).
[Crossref]

Rao, G. H.

F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
[Crossref]

Ren, F.

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

Ribeiro, C. T. M.

A. R. Zanatta, C. T. M. Ribeiro, and U. Jahn, “Optoelectronic and structural characteristics of Er-doped amorphous AlN films,” J. Appl. Phys. 98(9), 093514 (2005).
[Crossref]

Rinnert, H.

H. Rinnert, S. S. Hussain, V. Brien, J. Legrand, and P. Pigeat, “Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering,” J. Lumin. 132(9), 2367–2370 (2012).
[Crossref]

Rubin, M.

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]

Salvi, M.

P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]

Schawartz, R. N.

X. Wu, U. Hommerich, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schawartz, and J. M. Zavada, “Photoluminescence study of Er-doped AlN,” J. Lumin. 72, 284–286 (1997).
[Crossref]

Schneider, J.

H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
[Crossref]

Schwartz, R. N.

M. Thaik, U. Hommerich, R. N. Schwartz, R. G. Wilson, and J. M. Zavada, “Photoluminescence spectroscopy of erbium implanted gallium nitride,” Appl. Phys. Lett. 71(18), 2641 (1997).
[Crossref]

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]

Sedhain, A.

C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Formation energy of optically active Er3+ centers in Er doped GaN,” Appl. Phys. Lett. 101(5), 051114 (2012).
[Crossref]

Seo, J. T.

U. Hommerich, J. T. Seo, C. R. Abernathy, A. J. Steckl, and J. M. Zavada, “Spectroscopic studies of the visible and infrared luminescence from Er doped GaN,” Mater. Sci. Eng. B 81(1-3), 116–120 (2001).
[Crossref]

Shand, W. A.

M. R. Brown, A. F. J. Cox, W. A. Shand, and J. M. Williams, “The spectroscopy of rare earth doped chalcogenides,” Advances in Quantum Electronics 2, 69–155 (1974).
[Crossref]

Steckl, A. J.

U. Hommerich, J. T. Seo, C. R. Abernathy, A. J. Steckl, and J. M. Zavada, “Spectroscopic studies of the visible and infrared luminescence from Er doped GaN,” Mater. Sci. Eng. B 81(1-3), 116–120 (2001).
[Crossref]

A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compound Semiconductor 6(1), 48 (2000).

R. Birkhahn, M. Garter, and A. J. Steckl, “Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates,” Appl. Phys. Lett. 74(15), 2161 (1999).
[Crossref]

Sun, B. J.

F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
[Crossref]

Sun, Z. Y.

R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping,” Appl. Phys. Lett. 105(5), 051106 (2014).
[Crossref]

Taniyasu, Y.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

Thaik, M.

M. Thaik, U. Hommerich, R. N. Schwartz, R. G. Wilson, and J. M. Zavada, “Photoluminescence spectroscopy of erbium implanted gallium nitride,” Appl. Phys. Lett. 71(18), 2641 (1997).
[Crossref]

Torvik, J. T.

J. T. Torvik, R. J. Feuerstein, J. I. Pankove, C. H. Qiu, and F. Namavar, “Electroluminescence from erbium and oxygen coimplanted GaN,” Appl. Phys. Lett. 69(14), 2098 (1996).
[Crossref]

Ugolini, C.

C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Formation energy of optically active Er3+ centers in Er doped GaN,” Appl. Phys. Lett. 101(5), 051114 (2012).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 90(5), 051110 (2007).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]

Wessels, B. W.

A. J. Neuhalfen and B. W. Wessels, “Thermal quenching of Er3+‐related luminescence in In1−xGaxP,” Appl. Phys. Lett. 60(21), 2657 (1992).
[Crossref]

Williams, J. M.

M. R. Brown, A. F. J. Cox, W. A. Shand, and J. M. Williams, “The spectroscopy of rare earth doped chalcogenides,” Advances in Quantum Electronics 2, 69–155 (1974).
[Crossref]

Wilson, R. G.

M. Thaik, U. Hommerich, R. N. Schwartz, R. G. Wilson, and J. M. Zavada, “Photoluminescence spectroscopy of erbium implanted gallium nitride,” Appl. Phys. Lett. 71(18), 2641 (1997).
[Crossref]

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

X. Wu, U. Hommerich, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schawartz, and J. M. Zavada, “Photoluminescence study of Er-doped AlN,” J. Lumin. 72, 284–286 (1997).
[Crossref]

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]

Wu, X.

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

X. Wu, U. Hommerich, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schawartz, and J. M. Zavada, “Photoluminescence study of Er-doped AlN,” J. Lumin. 72, 284–286 (1997).
[Crossref]

Xie, R.

R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping,” Appl. Phys. Lett. 105(5), 051106 (2014).
[Crossref]

Zanatta, A. R.

A. R. Zanatta, C. T. M. Ribeiro, and U. Jahn, “Optoelectronic and structural characteristics of Er-doped amorphous AlN films,” J. Appl. Phys. 98(9), 093514 (2005).
[Crossref]

Zavada, J. M.

C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Formation energy of optically active Er3+ centers in Er doped GaN,” Appl. Phys. Lett. 101(5), 051114 (2012).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 90(5), 051110 (2007).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]

J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061 (2004).
[Crossref]

U. Hommerich, J. T. Seo, C. R. Abernathy, A. J. Steckl, and J. M. Zavada, “Spectroscopic studies of the visible and infrared luminescence from Er doped GaN,” Mater. Sci. Eng. B 81(1-3), 116–120 (2001).
[Crossref]

X. Wu, U. Hommerich, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schawartz, and J. M. Zavada, “Photoluminescence study of Er-doped AlN,” J. Lumin. 72, 284–286 (1997).
[Crossref]

M. Thaik, U. Hommerich, R. N. Schwartz, R. G. Wilson, and J. M. Zavada, “Photoluminescence spectroscopy of erbium implanted gallium nitride,” Appl. Phys. Lett. 71(18), 2641 (1997).
[Crossref]

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

J. M. Zavada and D. Zhang, “Luminescence properties of erbium in III–V compound semiconductors,” Solid-State Electron. 38(7), 1285–1293 (1995).
[Crossref]

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]

Zhang, D.

J. M. Zavada and D. Zhang, “Luminescence properties of erbium in III–V compound semiconductors,” Solid-State Electron. 38(7), 1285–1293 (1995).
[Crossref]

Zhang, H. R.

F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
[Crossref]

Zhang, Y.

F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
[Crossref]

Advances in Quantum Electronics (1)

M. R. Brown, A. F. J. Cox, W. A. Shand, and J. M. Williams, “The spectroscopy of rare earth doped chalcogenides,” Advances in Quantum Electronics 2, 69–155 (1974).
[Crossref]

Appl. Phys. Lett. (14)

H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
[Crossref]

M. Thaik, U. Hommerich, R. N. Schwartz, R. G. Wilson, and J. M. Zavada, “Photoluminescence spectroscopy of erbium implanted gallium nitride,” Appl. Phys. Lett. 71(18), 2641 (1997).
[Crossref]

J. T. Torvik, R. J. Feuerstein, J. I. Pankove, C. H. Qiu, and F. Namavar, “Electroluminescence from erbium and oxygen coimplanted GaN,” Appl. Phys. Lett. 69(14), 2098 (1996).
[Crossref]

R. Birkhahn, M. Garter, and A. J. Steckl, “Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates,” Appl. Phys. Lett. 74(15), 2161 (1999).
[Crossref]

A. J. Neuhalfen and B. W. Wessels, “Thermal quenching of Er3+‐related luminescence in In1−xGaxP,” Appl. Phys. Lett. 60(21), 2657 (1992).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 90(5), 051110 (2007).
[Crossref]

S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, U. Hömmerich, X. Wu, R. G. Wilson, R. N. Schwartz, J. M. Zavada, and F. Ren, “Luminescence enhancement in AlN(Er) by hydrogenation,” Appl. Phys. Lett. 71(13), 1807 (1997).
[Crossref]

B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91(12), 121117 (2007).
[Crossref]

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors,” Appl. Phys. Lett. 101(19), 192106 (2012).
[Crossref]

C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Formation energy of optically active Er3+ centers in Er doped GaN,” Appl. Phys. Lett. 101(5), 051114 (2012).
[Crossref]

R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping,” Appl. Phys. Lett. 105(5), 051106 (2014).
[Crossref]

J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061 (2004).
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Compound Semiconductor (1)

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[Crossref]

J. Appl. Phys. (3)

F. S. Liu, Q. L. Liu, J. K. Liang, J. Luo, H. R. Zhang, Y. Zhang, B. J. Sun, and G. H. Rao, “Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering,” J. Appl. Phys. 99(5), 053515 (2006).
[Crossref]

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[Crossref]

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[Crossref]

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H. Rinnert, S. S. Hussain, V. Brien, J. Legrand, and P. Pigeat, “Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering,” J. Lumin. 132(9), 2367–2370 (2012).
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Mater. Sci. Eng. B (1)

U. Hommerich, J. T. Seo, C. R. Abernathy, A. J. Steckl, and J. M. Zavada, “Spectroscopic studies of the visible and infrared luminescence from Er doped GaN,” Mater. Sci. Eng. B 81(1-3), 116–120 (2001).
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Figures (5)

Fig. 1
Fig. 1 (a) Schematic layer structure and (b) in situ optical reflection curve of the optimized Er doped AlN epilayer (AlN:Er) grown on AlN/sapphire template.
Fig. 2
Fig. 2 (a) Room temperature (300 K) PL spectra near 1.54 µm of AlN:Er grown at different growth temperatures (975, 1000, 1025, 1050, 1075, 1100, and 1125 °C). The excitation wavelength used was 375 nm. (b) The PL intensity at 1.54 µm as a function of the growth temperature. (c) The full width at half maximum (FWHM) of the XRD (0002) rocking curve of AlN:Er as a function of the growth temperature.
Fig. 3
Fig. 3 (a) 300 K PL spectra near 1.54 µm of AlN:Er (above) and GaN:Er (below). The excitation wavelength used was 375 nm. (b) 300 K PL spectra near 1.54 µm of AlN:Er (top) and GaN:Er (bottom). The excitation wavelength used was 195 nm.
Fig. 4
Fig. 4 Comparison of room temperature Er-related PL spectra near 1.54 µm between AlN:Er and GaN:Er epilayers under resonant pump by a 980 nm laser diode..
Fig. 5
Fig. 5 PL spectra of the 1.54 µm emission of AlN:Er measured at different temperatures 300 K (top) and 10 K (bottom).The excitation wavelength used was 260 nm.

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