Abstract

A novel CGG-type laser crystal of Nd3+:CNGS is characterized, including crystal growth, structure, refractive index, spectroscopic and laser performance. For Nd3+:CNGS crystal, the unit-cell parameters are a = 0.88897 ( ± 8.89 × 10−5) nm, c = 0.497998 ( ± 4.85 × 10−5) nm and V = 0.28219 nm3. The refractive index no and ne of Nd3+:CNGS were calculated to be 1.772 and 1.854 respectively at 1065 nm. The transmittance spectra of Nd3+:CNGS were measured, four main absorption peaks were located at 586 nm, 748 nm, 804 nm and 804 nm respectively. The absorption cross-section in z-axis is 6.08 × 10−20 cm2 around 804nm. The strongest emission peak of the fluorescence spectra was located at 1064 nm with the emission cross-section of 6.81 × 10−20 cm2 for E//x polarization and the fluorescence lifetime was 255.6 μs. Moreover, the continuous-wave laser at 1065 nm was obtained with the maximum output power of 1.43 W in the z-cut sample for the first time to the best of our knowledge, the optical conversion efficiency was 29.3% and the slope efficiency was 31.0%, which indicated that Nd3+:CNGS crystal should be a promising gain material.

© 2015 Optical Society of America

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    [Crossref]
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    [Crossref]
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2013 (1)

2012 (2)

S. Q. Sun, H. J. Zhang, H. H. Yu, H. H. Xu, H. J. Cong, and J. Y. Wang, “Growth and optical properties of Nd:LaVO4 monoclinic crystal,” J. Mater. Res. 27(19), 2528–2534 (2012).
[Crossref]

K. Wu, L. Z. Hao, H. J. Zhang, H. H. Yu, Y. C. Wang, J. Y. Wang, X. P. Tian, Z. C. Zhou, J. H. Liu, and R. I. Boughton, “Lu3Ga5O12 crystal: exploration of new laser host material for the ytterbium ion,” J. Opt. Soc. Am. B 29(9), 2320–2328 (2012).
[Crossref]

2009 (1)

2006 (1)

X. Z. Shi, D. R. Yuan, X. F. Cheng, S. Y. Guo, G. W. Yu, and Z. F. Li, “Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal,” J. Rare Earths 24(z1), 197–199 (2006).

2005 (2)

X. Z. Shi, D. R. Yuan, S. Y. Guo, X. F. Cheng, H. Q. Sun, Z. F. Li, and J. A. Song, “Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal,” J. Cryst. Growth 277(1–4), 406–409 (2005).
[Crossref]

Y. Sato and T. Taira, “Comparative study on the spectroscopic properties of Nd:GdVO4 and Nd:YVO4 with hybrid process,” IEEE J. Sel. Top. Quantum Electron. 11(3), 613–620 (2005).
[Crossref]

2003 (1)

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

1999 (1)

I. H. Jung and K. H. Auh, “Crystal growth and piezoelectric properties of langasite (La3Ga5SiO14) crystals,” Mater. Lett. 41(5), 241–246 (1999).
[Crossref]

1998 (2)

H. Kawanaka, H. Tekeda, K. Shimamura, and T. Fukuda, “Growth and characterization of La3Ta0.5Ga5.5O14 single crystals,” J. Cryst. Growth 183(1–2), 274–277 (1998).
[Crossref]

B. V. Mill, E. L. Belokoneva, and T. Fukuda, “New compounds with Ca3Ga2Ge4O14-type structure: A3XY3Z2O14 (A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge),” Russ. J. Inorg. Chem. 43(8), 1168–1175 (1998).

1996 (2)

H. Takeda, K. Shimamura, T. Kohno, and T. Fukuda, “Growth and characterization of La3Nb0.5Ga5.5O14 single crystals,” J. Cryst. Growth 169(3), 503–508 (1996).
[Crossref]

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

Auh, K. H.

I. H. Jung and K. H. Auh, “Crystal growth and piezoelectric properties of langasite (La3Ga5SiO14) crystals,” Mater. Lett. 41(5), 241–246 (1999).
[Crossref]

Belokoneva, E. L.

B. V. Mill, E. L. Belokoneva, and T. Fukuda, “New compounds with Ca3Ga2Ge4O14-type structure: A3XY3Z2O14 (A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge),” Russ. J. Inorg. Chem. 43(8), 1168–1175 (1998).

Bezdelkin, V. V.

A. N. Gotalskaja, D. I. Dresin, S. N. Schegolkova, N. I. Saveleva, V. V. Bezdelkin, and G. N. Cherpoukhina, “Langasite crystal quality improvement aimed at high-Q resonator fabrication,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 657–666.
[Crossref]

Boughton, R. I.

Bustamante, A. N. P.

B. H. T. Chai, A. N. P. Bustamante, and M. C. Chou, “A new class of ordered langasite structure compounds,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 2000), pp. 163–168.
[Crossref]

Cai, H. Q.

Capelle, B.

B. Capelle, A. Zarka, J. Detaint, J. Schwartzel, A. Ibanez, E. Philippot, and J. P. Denis, “Study of gallium phosphate and langasite crystals and resonators by X ray topography,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1994), pp. 48–57.
[Crossref]

Chai, B. H. T.

M. M. C. Chou, S. Jen, and B. H. T. Chai, “Investigation of crystal growth and material constants of ordered langasite structure compounds,” in Proceedings of IEEE International Frequency Control Symposium and PDA Exhibition (IEEE, 2001), pp. 250–254.
[Crossref]

M. M. C. Chou, S. Jen, and B. H. T. Chai, “New Ordered Langasite Structure Compounds - Crystal Growth and Preliminary Investigation of the Material Properties,” IEEE Ultrasonics Symposium. 1, 225–230 (2001).
[Crossref]

B. H. T. Chai, A. N. P. Bustamante, and M. C. Chou, “A new class of ordered langasite structure compounds,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 2000), pp. 163–168.
[Crossref]

Cheng, X. F.

X. Z. Shi, D. R. Yuan, X. F. Cheng, S. Y. Guo, G. W. Yu, and Z. F. Li, “Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal,” J. Rare Earths 24(z1), 197–199 (2006).

X. Z. Shi, D. R. Yuan, S. Y. Guo, X. F. Cheng, H. Q. Sun, Z. F. Li, and J. A. Song, “Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal,” J. Cryst. Growth 277(1–4), 406–409 (2005).
[Crossref]

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Cherpoukhina, G. N.

A. N. Gotalskaja, D. I. Dresin, S. N. Schegolkova, N. I. Saveleva, V. V. Bezdelkin, and G. N. Cherpoukhina, “Langasite crystal quality improvement aimed at high-Q resonator fabrication,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 657–666.
[Crossref]

Chou, M. C.

B. H. T. Chai, A. N. P. Bustamante, and M. C. Chou, “A new class of ordered langasite structure compounds,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 2000), pp. 163–168.
[Crossref]

Chou, M. M. C.

M. M. C. Chou, S. Jen, and B. H. T. Chai, “Investigation of crystal growth and material constants of ordered langasite structure compounds,” in Proceedings of IEEE International Frequency Control Symposium and PDA Exhibition (IEEE, 2001), pp. 250–254.
[Crossref]

M. M. C. Chou, S. Jen, and B. H. T. Chai, “New Ordered Langasite Structure Compounds - Crystal Growth and Preliminary Investigation of the Material Properties,” IEEE Ultrasonics Symposium. 1, 225–230 (2001).
[Crossref]

Cong, H. J.

Denis, J. P.

B. Capelle, A. Zarka, J. Detaint, J. Schwartzel, A. Ibanez, E. Philippot, and J. P. Denis, “Study of gallium phosphate and langasite crystals and resonators by X ray topography,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1994), pp. 48–57.
[Crossref]

Detaint, J.

B. Capelle, A. Zarka, J. Detaint, J. Schwartzel, A. Ibanez, E. Philippot, and J. P. Denis, “Study of gallium phosphate and langasite crystals and resonators by X ray topography,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1994), pp. 48–57.
[Crossref]

Dresin, D. I.

A. N. Gotalskaja, D. I. Dresin, S. N. Schegolkova, N. I. Saveleva, V. V. Bezdelkin, and G. N. Cherpoukhina, “Langasite crystal quality improvement aimed at high-Q resonator fabrication,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 657–666.
[Crossref]

Fukuda, T.

B. V. Mill, E. L. Belokoneva, and T. Fukuda, “New compounds with Ca3Ga2Ge4O14-type structure: A3XY3Z2O14 (A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge),” Russ. J. Inorg. Chem. 43(8), 1168–1175 (1998).

H. Kawanaka, H. Tekeda, K. Shimamura, and T. Fukuda, “Growth and characterization of La3Ta0.5Ga5.5O14 single crystals,” J. Cryst. Growth 183(1–2), 274–277 (1998).
[Crossref]

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

H. Takeda, K. Shimamura, T. Kohno, and T. Fukuda, “Growth and characterization of La3Nb0.5Ga5.5O14 single crystals,” J. Cryst. Growth 169(3), 503–508 (1996).
[Crossref]

Gotalskaja, A. N.

A. N. Gotalskaja, D. I. Dresin, S. N. Schegolkova, N. I. Saveleva, V. V. Bezdelkin, and G. N. Cherpoukhina, “Langasite crystal quality improvement aimed at high-Q resonator fabrication,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 657–666.
[Crossref]

Guo, S. Y.

X. Z. Shi, D. R. Yuan, X. F. Cheng, S. Y. Guo, G. W. Yu, and Z. F. Li, “Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal,” J. Rare Earths 24(z1), 197–199 (2006).

X. Z. Shi, D. R. Yuan, S. Y. Guo, X. F. Cheng, H. Q. Sun, Z. F. Li, and J. A. Song, “Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal,” J. Cryst. Growth 277(1–4), 406–409 (2005).
[Crossref]

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Hao, L. Z.

Huang, H.

Ibanez, A.

B. Capelle, A. Zarka, J. Detaint, J. Schwartzel, A. Ibanez, E. Philippot, and J. P. Denis, “Study of gallium phosphate and langasite crystals and resonators by X ray topography,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1994), pp. 48–57.
[Crossref]

Jen, S.

M. M. C. Chou, S. Jen, and B. H. T. Chai, “Investigation of crystal growth and material constants of ordered langasite structure compounds,” in Proceedings of IEEE International Frequency Control Symposium and PDA Exhibition (IEEE, 2001), pp. 250–254.
[Crossref]

M. M. C. Chou, S. Jen, and B. H. T. Chai, “New Ordered Langasite Structure Compounds - Crystal Growth and Preliminary Investigation of the Material Properties,” IEEE Ultrasonics Symposium. 1, 225–230 (2001).
[Crossref]

Jiang, M. H.

Jung, I. H.

I. H. Jung and K. H. Auh, “Crystal growth and piezoelectric properties of langasite (La3Ga5SiO14) crystals,” Mater. Lett. 41(5), 241–246 (1999).
[Crossref]

Kawanaka, H.

H. Kawanaka, H. Tekeda, K. Shimamura, and T. Fukuda, “Growth and characterization of La3Ta0.5Ga5.5O14 single crystals,” J. Cryst. Growth 183(1–2), 274–277 (1998).
[Crossref]

Kohno, T.

H. Takeda, K. Shimamura, T. Kohno, and T. Fukuda, “Growth and characterization of La3Nb0.5Ga5.5O14 single crystals,” J. Cryst. Growth 169(3), 503–508 (1996).
[Crossref]

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

Li, Z. F.

X. Z. Shi, D. R. Yuan, X. F. Cheng, S. Y. Guo, G. W. Yu, and Z. F. Li, “Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal,” J. Rare Earths 24(z1), 197–199 (2006).

X. Z. Shi, D. R. Yuan, S. Y. Guo, X. F. Cheng, H. Q. Sun, Z. F. Li, and J. A. Song, “Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal,” J. Cryst. Growth 277(1–4), 406–409 (2005).
[Crossref]

Liu, J. H.

Lv, M. K.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Mill, B. V.

B. V. Mill, E. L. Belokoneva, and T. Fukuda, “New compounds with Ca3Ga2Ge4O14-type structure: A3XY3Z2O14 (A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge),” Russ. J. Inorg. Chem. 43(8), 1168–1175 (1998).

Yu. V. Pisarevsky, P. A. Senyushenkov, B. V. Mill, and N. A. Moiseeva, “Elastic piezoelectric, dielectric properties of La3Ga5.5Ta0.5O14 single crystals,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1998), pp. 742–747.

Yu. V. Pisarevsky, P. A. Senushencov, P. A. Popov, and B. V. Mill, “New strong piezoelectric La3Ga5.5Nb0.5O14 with temperature compensation cuts,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 653–656.

Moiseeva, N. A.

Yu. V. Pisarevsky, P. A. Senyushenkov, B. V. Mill, and N. A. Moiseeva, “Elastic piezoelectric, dielectric properties of La3Ga5.5Ta0.5O14 single crystals,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1998), pp. 742–747.

Pan, L. H.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Pan, Z. B.

Philippot, E.

B. Capelle, A. Zarka, J. Detaint, J. Schwartzel, A. Ibanez, E. Philippot, and J. P. Denis, “Study of gallium phosphate and langasite crystals and resonators by X ray topography,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1994), pp. 48–57.
[Crossref]

Pisarevsky, Yu. V.

Yu. V. Pisarevsky, P. A. Senyushenkov, B. V. Mill, and N. A. Moiseeva, “Elastic piezoelectric, dielectric properties of La3Ga5.5Ta0.5O14 single crystals,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1998), pp. 742–747.

Yu. V. Pisarevsky, P. A. Senushencov, P. A. Popov, and B. V. Mill, “New strong piezoelectric La3Ga5.5Nb0.5O14 with temperature compensation cuts,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 653–656.

Popov, P. A.

Yu. V. Pisarevsky, P. A. Senushencov, P. A. Popov, and B. V. Mill, “New strong piezoelectric La3Ga5.5Nb0.5O14 with temperature compensation cuts,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 653–656.

Sato, Y.

Y. Sato and T. Taira, “Comparative study on the spectroscopic properties of Nd:GdVO4 and Nd:YVO4 with hybrid process,” IEEE J. Sel. Top. Quantum Electron. 11(3), 613–620 (2005).
[Crossref]

Saveleva, N. I.

A. N. Gotalskaja, D. I. Dresin, S. N. Schegolkova, N. I. Saveleva, V. V. Bezdelkin, and G. N. Cherpoukhina, “Langasite crystal quality improvement aimed at high-Q resonator fabrication,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 657–666.
[Crossref]

Schegolkova, S. N.

A. N. Gotalskaja, D. I. Dresin, S. N. Schegolkova, N. I. Saveleva, V. V. Bezdelkin, and G. N. Cherpoukhina, “Langasite crystal quality improvement aimed at high-Q resonator fabrication,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 657–666.
[Crossref]

Schwartzel, J.

B. Capelle, A. Zarka, J. Detaint, J. Schwartzel, A. Ibanez, E. Philippot, and J. P. Denis, “Study of gallium phosphate and langasite crystals and resonators by X ray topography,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1994), pp. 48–57.
[Crossref]

Senushencov, P. A.

Yu. V. Pisarevsky, P. A. Senushencov, P. A. Popov, and B. V. Mill, “New strong piezoelectric La3Ga5.5Nb0.5O14 with temperature compensation cuts,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 653–656.

Senyushenkov, P. A.

Yu. V. Pisarevsky, P. A. Senyushenkov, B. V. Mill, and N. A. Moiseeva, “Elastic piezoelectric, dielectric properties of La3Ga5.5Ta0.5O14 single crystals,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1998), pp. 742–747.

Shi, X. Z.

X. Z. Shi, D. R. Yuan, X. F. Cheng, S. Y. Guo, G. W. Yu, and Z. F. Li, “Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal,” J. Rare Earths 24(z1), 197–199 (2006).

X. Z. Shi, D. R. Yuan, S. Y. Guo, X. F. Cheng, H. Q. Sun, Z. F. Li, and J. A. Song, “Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal,” J. Cryst. Growth 277(1–4), 406–409 (2005).
[Crossref]

Shimamura, K.

H. Kawanaka, H. Tekeda, K. Shimamura, and T. Fukuda, “Growth and characterization of La3Ta0.5Ga5.5O14 single crystals,” J. Cryst. Growth 183(1–2), 274–277 (1998).
[Crossref]

H. Takeda, K. Shimamura, T. Kohno, and T. Fukuda, “Growth and characterization of La3Nb0.5Ga5.5O14 single crystals,” J. Cryst. Growth 169(3), 503–508 (1996).
[Crossref]

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

Song, J. A.

X. Z. Shi, D. R. Yuan, S. Y. Guo, X. F. Cheng, H. Q. Sun, Z. F. Li, and J. A. Song, “Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal,” J. Cryst. Growth 277(1–4), 406–409 (2005).
[Crossref]

Sun, H. Q.

X. Z. Shi, D. R. Yuan, S. Y. Guo, X. F. Cheng, H. Q. Sun, Z. F. Li, and J. A. Song, “Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal,” J. Cryst. Growth 277(1–4), 406–409 (2005).
[Crossref]

Sun, S. Q.

S. Q. Sun, H. J. Zhang, H. H. Yu, H. H. Xu, H. J. Cong, and J. Y. Wang, “Growth and optical properties of Nd:LaVO4 monoclinic crystal,” J. Mater. Res. 27(19), 2528–2534 (2012).
[Crossref]

Taira, T.

Y. Sato and T. Taira, “Comparative study on the spectroscopic properties of Nd:GdVO4 and Nd:YVO4 with hybrid process,” IEEE J. Sel. Top. Quantum Electron. 11(3), 613–620 (2005).
[Crossref]

Takeda, H.

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

H. Takeda, K. Shimamura, T. Kohno, and T. Fukuda, “Growth and characterization of La3Nb0.5Ga5.5O14 single crystals,” J. Cryst. Growth 169(3), 503–508 (1996).
[Crossref]

Tekeda, H.

H. Kawanaka, H. Tekeda, K. Shimamura, and T. Fukuda, “Growth and characterization of La3Ta0.5Ga5.5O14 single crystals,” J. Cryst. Growth 183(1–2), 274–277 (1998).
[Crossref]

Tian, L.

Tian, X. P.

Wang, J. Y.

Wang, Q.

Wang, Y. C.

Wang, Z. M.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Wang, Z. P.

Wei, Z. Y.

Wu, K.

Xu, D.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Xu, H. H.

S. Q. Sun, H. J. Zhang, H. H. Yu, H. H. Xu, H. J. Cong, and J. Y. Wang, “Growth and optical properties of Nd:LaVO4 monoclinic crystal,” J. Mater. Res. 27(19), 2528–2534 (2012).
[Crossref]

Yu, G. W.

X. Z. Shi, D. R. Yuan, X. F. Cheng, S. Y. Guo, G. W. Yu, and Z. F. Li, “Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal,” J. Rare Earths 24(z1), 197–199 (2006).

Yu, H. H.

Yu, Y. G.

Yuan, D. R.

X. Z. Shi, D. R. Yuan, X. F. Cheng, S. Y. Guo, G. W. Yu, and Z. F. Li, “Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal,” J. Rare Earths 24(z1), 197–199 (2006).

X. Z. Shi, D. R. Yuan, S. Y. Guo, X. F. Cheng, H. Q. Sun, Z. F. Li, and J. A. Song, “Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal,” J. Cryst. Growth 277(1–4), 406–409 (2005).
[Crossref]

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Yuan, H.

Zarka, A.

B. Capelle, A. Zarka, J. Detaint, J. Schwartzel, A. Ibanez, E. Philippot, and J. P. Denis, “Study of gallium phosphate and langasite crystals and resonators by X ray topography,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1994), pp. 48–57.
[Crossref]

Zhang, H. J.

Zhang, Z. G.

Zhou, Z. C.

IEEE J. Sel. Top. Quantum Electron. (1)

Y. Sato and T. Taira, “Comparative study on the spectroscopic properties of Nd:GdVO4 and Nd:YVO4 with hybrid process,” IEEE J. Sel. Top. Quantum Electron. 11(3), 613–620 (2005).
[Crossref]

J. Cryst. Growth (5)

X. Z. Shi, D. R. Yuan, S. Y. Guo, X. F. Cheng, H. Q. Sun, Z. F. Li, and J. A. Song, “Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal,” J. Cryst. Growth 277(1–4), 406–409 (2005).
[Crossref]

H. Takeda, K. Shimamura, T. Kohno, and T. Fukuda, “Growth and characterization of La3Nb0.5Ga5.5O14 single crystals,” J. Cryst. Growth 169(3), 503–508 (1996).
[Crossref]

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

H. Kawanaka, H. Tekeda, K. Shimamura, and T. Fukuda, “Growth and characterization of La3Ta0.5Ga5.5O14 single crystals,” J. Cryst. Growth 183(1–2), 274–277 (1998).
[Crossref]

J. Mater. Res. (1)

S. Q. Sun, H. J. Zhang, H. H. Yu, H. H. Xu, H. J. Cong, and J. Y. Wang, “Growth and optical properties of Nd:LaVO4 monoclinic crystal,” J. Mater. Res. 27(19), 2528–2534 (2012).
[Crossref]

J. Opt. Soc. Am. B (1)

J. Rare Earths (1)

X. Z. Shi, D. R. Yuan, X. F. Cheng, S. Y. Guo, G. W. Yu, and Z. F. Li, “Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal,” J. Rare Earths 24(z1), 197–199 (2006).

Mater. Lett. (1)

I. H. Jung and K. H. Auh, “Crystal growth and piezoelectric properties of langasite (La3Ga5SiO14) crystals,” Mater. Lett. 41(5), 241–246 (1999).
[Crossref]

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Opt. Lett. (1)

Russ. J. Inorg. Chem. (1)

B. V. Mill, E. L. Belokoneva, and T. Fukuda, “New compounds with Ca3Ga2Ge4O14-type structure: A3XY3Z2O14 (A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge),” Russ. J. Inorg. Chem. 43(8), 1168–1175 (1998).

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[Crossref]

M. M. C. Chou, S. Jen, and B. H. T. Chai, “Investigation of crystal growth and material constants of ordered langasite structure compounds,” in Proceedings of IEEE International Frequency Control Symposium and PDA Exhibition (IEEE, 2001), pp. 250–254.
[Crossref]

M. M. C. Chou, S. Jen, and B. H. T. Chai, “New Ordered Langasite Structure Compounds - Crystal Growth and Preliminary Investigation of the Material Properties,” IEEE Ultrasonics Symposium. 1, 225–230 (2001).
[Crossref]

Yu. V. Pisarevsky, P. A. Senushencov, P. A. Popov, and B. V. Mill, “New strong piezoelectric La3Ga5.5Nb0.5O14 with temperature compensation cuts,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 653–656.

B. Capelle, A. Zarka, J. Detaint, J. Schwartzel, A. Ibanez, E. Philippot, and J. P. Denis, “Study of gallium phosphate and langasite crystals and resonators by X ray topography,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1994), pp. 48–57.
[Crossref]

A. N. Gotalskaja, D. I. Dresin, S. N. Schegolkova, N. I. Saveleva, V. V. Bezdelkin, and G. N. Cherpoukhina, “Langasite crystal quality improvement aimed at high-Q resonator fabrication,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1995), pp. 657–666.
[Crossref]

L. G. Deshazer and R. J. St. Piorro, “Novel neodymtam hosts,” in Conference on Lasers and Electro-Optics, Vol. 12 of 1992 OSA Technical Digest (Optical Society of America, 1992), paper CTuG1.

Yu. V. Pisarevsky, P. A. Senyushenkov, B. V. Mill, and N. A. Moiseeva, “Elastic piezoelectric, dielectric properties of La3Ga5.5Ta0.5O14 single crystals,” in Proceedings of IEEE International Frequency Control Symposium (IEEE, 1998), pp. 742–747.

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Figures (11)

Fig. 1
Fig. 1 The as-grown single crystals: (a) CNGS; (b) Nd3+:CNGS.
Fig. 2
Fig. 2 XRPD of CNGS and Nd3+:CNGS crystals.
Fig. 3
Fig. 3 Schematic diagram of the experimental setup of the CW Nd3+:CNGS laser.
Fig. 4
Fig. 4 Refractive index of CNGS and Nd3+:CNGS.
Fig. 5
Fig. 5 Transmission spectra in three directions: (a) CNGS; (b) Nd3+:CNGS.
Fig. 6
Fig. 6 (a) Absorption spectrum of Nd3+:CNGS crystal in three directions between 300 nm to 1000 nm; (b) Absorption cross-sections of Nd3+:CNGS over the range of 760-850 nm.
Fig. 7
Fig. 7 Fluorescence spectra of Nd3+:CNGS crystal: (a) normal emission spectrum; (b) polarized emission spectrum (polarized direction paralleled to x, y and z).
Fig. 8
Fig. 8 Fluorescence decay curve of Nd3+:CNGS crystal
Fig. 9
Fig. 9 Polarized emission cross-sections of Nd3+:CNGS
Fig. 10
Fig. 10 Average output power versus absorbed pump power in the x-, y- and z-cut for T = 5%.
Fig. 11
Fig. 11 Spectrum of the CW laser in z direction at the absorbed pump power of 4.89W

Tables (1)

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Table 1 Sellmeier coefficients of CNGS and Nd3+:CNGS

Equations (2)

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n 2 = A + B λ 2 C + D λ 2
σ e = λ 4 I ( λ ) 8 π c n 2 τ r I ( λ ) d λ

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