Abstract

Uncommon photoluminescence (PL) with fine structure from amorphous indium zinc oxide (IZO) without and with silver (Ag) nano-particles embedment is observed. Significant enhancement in light emission is found for the sample when the embedded Ag nominal layer thickness is increased to 2 nm. The amorphous IZO (a-IZO) samples with and without Ag layer embedment exhibit two-peak PL at ~398nm (~3.12eV, violet light) and ~450nm (~2.76 eV, deep blue light), originating from the optical gap emission and the radiative recombination at the defect level. Interestingly, the intensity of the peak at ~398nm does not show any obvious change while the intensity of the deep blue light emission at ~450nm is significantly increased first and then decreased with the increment of Ag embedment. The unexpectedly enhanced PL at 450nm from IZO with a small amount of Ag embedment is attributed to the coupling between excited electron-hole pairs in IZO films and the surface plasmon of Ag particles. A careful analysis and discussion reveals an interesting mechanism of a-IZO and Ag interaction.

© 2015 Optical Society of America

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  1. F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
    [Crossref]
  2. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
    [Crossref] [PubMed]
  3. W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
    [Crossref]
  4. L. Wang, M. H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, “High-performance transparent inorganic-organic hybrid thin-film n-type transistors,” Nat. Mater. 5(11), 893–900 (2006).
    [Crossref] [PubMed]
  5. H. S. Choi and S. Jeon, “Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination,” Appl. Phys. Lett. 104(2), 023505 (2014).
    [Crossref]
  6. D. H. Shin, H. T. Oh, S. H. Choi, J. W. Park, and H. Lee, “Surface-plasmon-mediated Enhancement of Photoluminescence from Hybrid Structures of Indium Zinc Oxide/Ag/Indium Zinc Oxide,” J. Korean Phys. Soc. 56(4), 1164 (2010).
    [Crossref]
  7. K. Ramamoorthy, K. Kumar, R. Chandramohan, K. Sankaranarayanan, R. Saravanan, I. V. Kityk, and P. Ramasamy, “High optical quality IZO (In2Zn2O5) thin films by PLD - A novel development for III-V opto-electronic devices,” Opt. Commun. 262(1), 91–96 (2006).
    [Crossref]
  8. J. Sun, W. Yang, Y. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, “Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,” J. Appl. Phys. 112(8), 083709 (2012).
    [Crossref]
  9. J. Sun, W. S. Lai, and H. Gong, “Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide,” J. Appl. Phys. 111(8), 083712 (2012).
    [Crossref]
  10. I. Kosacki, V. Petrovsky, and H. U. Anderson, “Band gap energy in nanocrystalline ZrO2: 16%Y thin films,” Appl. Phys. Lett. 74(3), 341 (1999).
    [Crossref]
  11. A. J. Leenheer, J. D. Perkins, M. F. A. M. van Hest, J. J. Berry, R. P. O’Hayre, and D. S. Ginley, “General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films,” Phys. Rev. B 77(11), 115215 (2008).
    [Crossref]
  12. N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, “Electrical and optical properties of amorphous indium zinc oxide films,” Thin Solid Films 496(1), 99–103 (2006).
    [Crossref]
  13. H. C. Pan, M. H. Shiao, C. Y. Su, and C. N. Hsiao, “Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films,” J. Vac. Sci. Technol. A 23(4), 1187 (2005).
    [Crossref]
  14. R. Martins, P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferriera, and E. Fortunato, “Electron transport and optical characteristics in amorphous indium zinc oxide films,” J. Non-Cryst. Solids 352(9-20), 1471–1474 (2006).
    [Crossref]
  15. S. Kasap, Principles of Electronic Materials and Devices (McGraw-Hill, 2006).
  16. C. Marcel, N. Naghavi, G. Couturier, J. Salardenne, and J. M. Tarascon, “Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films,” J. Appl. Phys. 91(7), 4291 (2002).
    [Crossref]
  17. I. Pelant and J. Valenta, Luminescence Spectroscopy of Semiconductors (Oxford University Press Inc., 2012).
  18. X. Gu, T. Qiu, W. Zhang, and P. K. Chu, “Light-emitting diodes enhanced by localized surface plasmon resonance,” Nanoscale Res. Lett. 6(1), 199 (2011).
    [Crossref] [PubMed]
  19. S. L. Smitha, K. M. Nissamudeen, D. Philip, and K. G. Gopchandran, “Studies on surface plasmon resonance and photoluminescence of silver nanoparticles,” Spectrochim. Acta A Mol. Biomol. Spectrosc. 71(1), 186–190 (2008).
    [Crossref] [PubMed]
  20. W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
    [Crossref]
  21. W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
    [Crossref] [PubMed]
  22. X. Tang, W. B. A. Ho, and J. M. Xue, “Synthesis of Zn-Doped AgInS2 Nanocrystals and Their Fluorescence Properties,” J. Phys. Chem. C 116(17), 9769–9773 (2012).
    [Crossref]

2014 (1)

H. S. Choi and S. Jeon, “Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination,” Appl. Phys. Lett. 104(2), 023505 (2014).
[Crossref]

2012 (5)

J. Sun, W. Yang, Y. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, “Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,” J. Appl. Phys. 112(8), 083709 (2012).
[Crossref]

J. Sun, W. S. Lai, and H. Gong, “Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide,” J. Appl. Phys. 111(8), 083712 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
[Crossref] [PubMed]

X. Tang, W. B. A. Ho, and J. M. Xue, “Synthesis of Zn-Doped AgInS2 Nanocrystals and Their Fluorescence Properties,” J. Phys. Chem. C 116(17), 9769–9773 (2012).
[Crossref]

2011 (1)

X. Gu, T. Qiu, W. Zhang, and P. K. Chu, “Light-emitting diodes enhanced by localized surface plasmon resonance,” Nanoscale Res. Lett. 6(1), 199 (2011).
[Crossref] [PubMed]

2010 (2)

D. H. Shin, H. T. Oh, S. H. Choi, J. W. Park, and H. Lee, “Surface-plasmon-mediated Enhancement of Photoluminescence from Hybrid Structures of Indium Zinc Oxide/Ag/Indium Zinc Oxide,” J. Korean Phys. Soc. 56(4), 1164 (2010).
[Crossref]

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

2008 (2)

S. L. Smitha, K. M. Nissamudeen, D. Philip, and K. G. Gopchandran, “Studies on surface plasmon resonance and photoluminescence of silver nanoparticles,” Spectrochim. Acta A Mol. Biomol. Spectrosc. 71(1), 186–190 (2008).
[Crossref] [PubMed]

A. J. Leenheer, J. D. Perkins, M. F. A. M. van Hest, J. J. Berry, R. P. O’Hayre, and D. S. Ginley, “General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films,” Phys. Rev. B 77(11), 115215 (2008).
[Crossref]

2006 (4)

N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, “Electrical and optical properties of amorphous indium zinc oxide films,” Thin Solid Films 496(1), 99–103 (2006).
[Crossref]

R. Martins, P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferriera, and E. Fortunato, “Electron transport and optical characteristics in amorphous indium zinc oxide films,” J. Non-Cryst. Solids 352(9-20), 1471–1474 (2006).
[Crossref]

L. Wang, M. H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, “High-performance transparent inorganic-organic hybrid thin-film n-type transistors,” Nat. Mater. 5(11), 893–900 (2006).
[Crossref] [PubMed]

K. Ramamoorthy, K. Kumar, R. Chandramohan, K. Sankaranarayanan, R. Saravanan, I. V. Kityk, and P. Ramasamy, “High optical quality IZO (In2Zn2O5) thin films by PLD - A novel development for III-V opto-electronic devices,” Opt. Commun. 262(1), 91–96 (2006).
[Crossref]

2005 (1)

H. C. Pan, M. H. Shiao, C. Y. Su, and C. N. Hsiao, “Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films,” J. Vac. Sci. Technol. A 23(4), 1187 (2005).
[Crossref]

2004 (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

2003 (1)

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

2002 (1)

C. Marcel, N. Naghavi, G. Couturier, J. Salardenne, and J. M. Tarascon, “Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films,” J. Appl. Phys. 91(7), 4291 (2002).
[Crossref]

1999 (1)

I. Kosacki, V. Petrovsky, and H. U. Anderson, “Band gap energy in nanocrystalline ZrO2: 16%Y thin films,” Appl. Phys. Lett. 74(3), 341 (1999).
[Crossref]

Ahn, B. D.

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

Almeida, P.

R. Martins, P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferriera, and E. Fortunato, “Electron transport and optical characteristics in amorphous indium zinc oxide films,” J. Non-Cryst. Solids 352(9-20), 1471–1474 (2006).
[Crossref]

Anderson, H. U.

I. Kosacki, V. Petrovsky, and H. U. Anderson, “Band gap energy in nanocrystalline ZrO2: 16%Y thin films,” Appl. Phys. Lett. 74(3), 341 (1999).
[Crossref]

Barquinha, P.

R. Martins, P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferriera, and E. Fortunato, “Electron transport and optical characteristics in amorphous indium zinc oxide films,” J. Non-Cryst. Solids 352(9-20), 1471–1474 (2006).
[Crossref]

Berry, J. J.

A. J. Leenheer, J. D. Perkins, M. F. A. M. van Hest, J. J. Berry, R. P. O’Hayre, and D. S. Ginley, “General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films,” Phys. Rev. B 77(11), 115215 (2008).
[Crossref]

Campos, C. E. M.

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Chandramohan, R.

K. Ramamoorthy, K. Kumar, R. Chandramohan, K. Sankaranarayanan, R. Saravanan, I. V. Kityk, and P. Ramasamy, “High optical quality IZO (In2Zn2O5) thin films by PLD - A novel development for III-V opto-electronic devices,” Opt. Commun. 262(1), 91–96 (2006).
[Crossref]

Choi, H. S.

H. S. Choi and S. Jeon, “Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination,” Appl. Phys. Lett. 104(2), 023505 (2014).
[Crossref]

Choi, S. H.

D. H. Shin, H. T. Oh, S. H. Choi, J. W. Park, and H. Lee, “Surface-plasmon-mediated Enhancement of Photoluminescence from Hybrid Structures of Indium Zinc Oxide/Ag/Indium Zinc Oxide,” J. Korean Phys. Soc. 56(4), 1164 (2010).
[Crossref]

Chu, P. K.

X. Gu, T. Qiu, W. Zhang, and P. K. Chu, “Light-emitting diodes enhanced by localized surface plasmon resonance,” Nanoscale Res. Lett. 6(1), 199 (2011).
[Crossref] [PubMed]

Couturier, G.

C. Marcel, N. Naghavi, G. Couturier, J. Salardenne, and J. M. Tarascon, “Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films,” J. Appl. Phys. 91(7), 4291 (2002).
[Crossref]

Facchetti, A.

L. Wang, M. H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, “High-performance transparent inorganic-organic hybrid thin-film n-type transistors,” Nat. Mater. 5(11), 893–900 (2006).
[Crossref] [PubMed]

Ferriera, I.

R. Martins, P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferriera, and E. Fortunato, “Electron transport and optical characteristics in amorphous indium zinc oxide films,” J. Non-Cryst. Solids 352(9-20), 1471–1474 (2006).
[Crossref]

Fortunato, E.

R. Martins, P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferriera, and E. Fortunato, “Electron transport and optical characteristics in amorphous indium zinc oxide films,” J. Non-Cryst. Solids 352(9-20), 1471–1474 (2006).
[Crossref]

Ginley, D. S.

A. J. Leenheer, J. D. Perkins, M. F. A. M. van Hest, J. J. Berry, R. P. O’Hayre, and D. S. Ginley, “General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films,” Phys. Rev. B 77(11), 115215 (2008).
[Crossref]

Gong, H.

J. Sun, W. S. Lai, and H. Gong, “Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide,” J. Appl. Phys. 111(8), 083712 (2012).
[Crossref]

J. Sun, W. Yang, Y. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, “Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,” J. Appl. Phys. 112(8), 083709 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
[Crossref] [PubMed]

Gopchandran, K. G.

S. L. Smitha, K. M. Nissamudeen, D. Philip, and K. G. Gopchandran, “Studies on surface plasmon resonance and photoluminescence of silver nanoparticles,” Spectrochim. Acta A Mol. Biomol. Spectrosc. 71(1), 186–190 (2008).
[Crossref] [PubMed]

Gu, X.

X. Gu, T. Qiu, W. Zhang, and P. K. Chu, “Light-emitting diodes enhanced by localized surface plasmon resonance,” Nanoscale Res. Lett. 6(1), 199 (2011).
[Crossref] [PubMed]

Hirano, M.

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Ho, W. B. A.

X. Tang, W. B. A. Ho, and J. M. Xue, “Synthesis of Zn-Doped AgInS2 Nanocrystals and Their Fluorescence Properties,” J. Phys. Chem. C 116(17), 9769–9773 (2012).
[Crossref]

Hong, M. H.

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

Hosono, H.

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Hsiao, C. N.

H. C. Pan, M. H. Shiao, C. Y. Su, and C. N. Hsiao, “Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films,” J. Vac. Sci. Technol. A 23(4), 1187 (2005).
[Crossref]

Huang, Y.

J. Sun, W. Yang, Y. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, “Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,” J. Appl. Phys. 112(8), 083709 (2012).
[Crossref]

Inoue, K.

N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, “Electrical and optical properties of amorphous indium zinc oxide films,” Thin Solid Films 496(1), 99–103 (2006).
[Crossref]

Ito, N.

N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, “Electrical and optical properties of amorphous indium zinc oxide films,” Thin Solid Films 496(1), 99–103 (2006).
[Crossref]

Jeon, S.

H. S. Choi and S. Jeon, “Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination,” Appl. Phys. Lett. 104(2), 023505 (2014).
[Crossref]

Jeong, W. H.

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

Kaijio, A.

N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, “Electrical and optical properties of amorphous indium zinc oxide films,” Thin Solid Films 496(1), 99–103 (2006).
[Crossref]

Kamiya, T.

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Kim, G. H.

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

Kim, H. J.

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

Kityk, I. V.

K. Ramamoorthy, K. Kumar, R. Chandramohan, K. Sankaranarayanan, R. Saravanan, I. V. Kityk, and P. Ramasamy, “High optical quality IZO (In2Zn2O5) thin films by PLD - A novel development for III-V opto-electronic devices,” Opt. Commun. 262(1), 91–96 (2006).
[Crossref]

Kosacki, I.

I. Kosacki, V. Petrovsky, and H. U. Anderson, “Band gap energy in nanocrystalline ZrO2: 16%Y thin films,” Appl. Phys. Lett. 74(3), 341 (1999).
[Crossref]

Kumar, K.

K. Ramamoorthy, K. Kumar, R. Chandramohan, K. Sankaranarayanan, R. Saravanan, I. V. Kityk, and P. Ramasamy, “High optical quality IZO (In2Zn2O5) thin films by PLD - A novel development for III-V opto-electronic devices,” Opt. Commun. 262(1), 91–96 (2006).
[Crossref]

Lai, W. S.

J. Sun, W. S. Lai, and H. Gong, “Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide,” J. Appl. Phys. 111(8), 083712 (2012).
[Crossref]

J. Sun, W. Yang, Y. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, “Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,” J. Appl. Phys. 112(8), 083709 (2012).
[Crossref]

Lanciotti, F.

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Lee, A. Y. S.

J. Sun, W. Yang, Y. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, “Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,” J. Appl. Phys. 112(8), 083709 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
[Crossref] [PubMed]

Lee, E. J. H.

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Lee, H.

D. H. Shin, H. T. Oh, S. H. Choi, J. W. Park, and H. Lee, “Surface-plasmon-mediated Enhancement of Photoluminescence from Hybrid Structures of Indium Zinc Oxide/Ag/Indium Zinc Oxide,” J. Korean Phys. Soc. 56(4), 1164 (2010).
[Crossref]

Lee, S. Y.

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

Leenheer, A. J.

A. J. Leenheer, J. D. Perkins, M. F. A. M. van Hest, J. J. Berry, R. P. O’Hayre, and D. S. Ginley, “General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films,” Phys. Rev. B 77(11), 115215 (2008).
[Crossref]

Leite, E. R.

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Liao, R. Y.

Longo, E.

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Lu, G.

L. Wang, M. H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, “High-performance transparent inorganic-organic hybrid thin-film n-type transistors,” Nat. Mater. 5(11), 893–900 (2006).
[Crossref] [PubMed]

Marcel, C.

C. Marcel, N. Naghavi, G. Couturier, J. Salardenne, and J. M. Tarascon, “Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films,” J. Appl. Phys. 91(7), 4291 (2002).
[Crossref]

Marks, T. J.

L. Wang, M. H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, “High-performance transparent inorganic-organic hybrid thin-film n-type transistors,” Nat. Mater. 5(11), 893–900 (2006).
[Crossref] [PubMed]

Martins, R.

R. Martins, P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferriera, and E. Fortunato, “Electron transport and optical characteristics in amorphous indium zinc oxide films,” J. Non-Cryst. Solids 352(9-20), 1471–1474 (2006).
[Crossref]

Mastellaro, V.

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Naghavi, N.

C. Marcel, N. Naghavi, G. Couturier, J. Salardenne, and J. M. Tarascon, “Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films,” J. Appl. Phys. 91(7), 4291 (2002).
[Crossref]

Nissamudeen, K. M.

S. L. Smitha, K. M. Nissamudeen, D. Philip, and K. G. Gopchandran, “Studies on surface plasmon resonance and photoluminescence of silver nanoparticles,” Spectrochim. Acta A Mol. Biomol. Spectrosc. 71(1), 186–190 (2008).
[Crossref] [PubMed]

Nomura, K.

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

O’Hayre, R. P.

A. J. Leenheer, J. D. Perkins, M. F. A. M. van Hest, J. J. Berry, R. P. O’Hayre, and D. S. Ginley, “General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films,” Phys. Rev. B 77(11), 115215 (2008).
[Crossref]

Oh, H. T.

D. H. Shin, H. T. Oh, S. H. Choi, J. W. Park, and H. Lee, “Surface-plasmon-mediated Enhancement of Photoluminescence from Hybrid Structures of Indium Zinc Oxide/Ag/Indium Zinc Oxide,” J. Korean Phys. Soc. 56(4), 1164 (2010).
[Crossref]

Ohta, H.

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Pan, H. C.

H. C. Pan, M. H. Shiao, C. Y. Su, and C. N. Hsiao, “Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films,” J. Vac. Sci. Technol. A 23(4), 1187 (2005).
[Crossref]

Pan, Z. Y.

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

Park, J. W.

D. H. Shin, H. T. Oh, S. H. Choi, J. W. Park, and H. Lee, “Surface-plasmon-mediated Enhancement of Photoluminescence from Hybrid Structures of Indium Zinc Oxide/Ag/Indium Zinc Oxide,” J. Korean Phys. Soc. 56(4), 1164 (2010).
[Crossref]

Park, K. B.

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

Pereira, L.

R. Martins, P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferriera, and E. Fortunato, “Electron transport and optical characteristics in amorphous indium zinc oxide films,” J. Non-Cryst. Solids 352(9-20), 1471–1474 (2006).
[Crossref]

Perkins, J. D.

A. J. Leenheer, J. D. Perkins, M. F. A. M. van Hest, J. J. Berry, R. P. O’Hayre, and D. S. Ginley, “General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films,” Phys. Rev. B 77(11), 115215 (2008).
[Crossref]

Petrovsky, V.

I. Kosacki, V. Petrovsky, and H. U. Anderson, “Band gap energy in nanocrystalline ZrO2: 16%Y thin films,” Appl. Phys. Lett. 74(3), 341 (1999).
[Crossref]

Philip, D.

S. L. Smitha, K. M. Nissamudeen, D. Philip, and K. G. Gopchandran, “Studies on surface plasmon resonance and photoluminescence of silver nanoparticles,” Spectrochim. Acta A Mol. Biomol. Spectrosc. 71(1), 186–190 (2008).
[Crossref] [PubMed]

Pimentel, A.

R. Martins, P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferriera, and E. Fortunato, “Electron transport and optical characteristics in amorphous indium zinc oxide films,” J. Non-Cryst. Solids 352(9-20), 1471–1474 (2006).
[Crossref]

Pinheiro, C. D.

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Pizani, P. S.

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Pontes, F. M.

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Qiu, T.

X. Gu, T. Qiu, W. Zhang, and P. K. Chu, “Light-emitting diodes enhanced by localized surface plasmon resonance,” Nanoscale Res. Lett. 6(1), 199 (2011).
[Crossref] [PubMed]

Ramamoorthy, K.

K. Ramamoorthy, K. Kumar, R. Chandramohan, K. Sankaranarayanan, R. Saravanan, I. V. Kityk, and P. Ramasamy, “High optical quality IZO (In2Zn2O5) thin films by PLD - A novel development for III-V opto-electronic devices,” Opt. Commun. 262(1), 91–96 (2006).
[Crossref]

Ramasamy, P.

K. Ramamoorthy, K. Kumar, R. Chandramohan, K. Sankaranarayanan, R. Saravanan, I. V. Kityk, and P. Ramasamy, “High optical quality IZO (In2Zn2O5) thin films by PLD - A novel development for III-V opto-electronic devices,” Opt. Commun. 262(1), 91–96 (2006).
[Crossref]

Ryu, M. K.

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

Salardenne, J.

C. Marcel, N. Naghavi, G. Couturier, J. Salardenne, and J. M. Tarascon, “Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films,” J. Appl. Phys. 91(7), 4291 (2002).
[Crossref]

Sankaranarayanan, K.

K. Ramamoorthy, K. Kumar, R. Chandramohan, K. Sankaranarayanan, R. Saravanan, I. V. Kityk, and P. Ramasamy, “High optical quality IZO (In2Zn2O5) thin films by PLD - A novel development for III-V opto-electronic devices,” Opt. Commun. 262(1), 91–96 (2006).
[Crossref]

Saravanan, R.

K. Ramamoorthy, K. Kumar, R. Chandramohan, K. Sankaranarayanan, R. Saravanan, I. V. Kityk, and P. Ramasamy, “High optical quality IZO (In2Zn2O5) thin films by PLD - A novel development for III-V opto-electronic devices,” Opt. Commun. 262(1), 91–96 (2006).
[Crossref]

Sato, Y.

N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, “Electrical and optical properties of amorphous indium zinc oxide films,” Thin Solid Films 496(1), 99–103 (2006).
[Crossref]

Seon, J. B.

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

Shiao, M. H.

H. C. Pan, M. H. Shiao, C. Y. Su, and C. N. Hsiao, “Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films,” J. Vac. Sci. Technol. A 23(4), 1187 (2005).
[Crossref]

Shigesato, Y.

N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, “Electrical and optical properties of amorphous indium zinc oxide films,” Thin Solid Films 496(1), 99–103 (2006).
[Crossref]

Shin, D. H.

D. H. Shin, H. T. Oh, S. H. Choi, J. W. Park, and H. Lee, “Surface-plasmon-mediated Enhancement of Photoluminescence from Hybrid Structures of Indium Zinc Oxide/Ag/Indium Zinc Oxide,” J. Korean Phys. Soc. 56(4), 1164 (2010).
[Crossref]

Shin, H. S.

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

Smitha, S. L.

S. L. Smitha, K. M. Nissamudeen, D. Philip, and K. G. Gopchandran, “Studies on surface plasmon resonance and photoluminescence of silver nanoparticles,” Spectrochim. Acta A Mol. Biomol. Spectrosc. 71(1), 186–190 (2008).
[Crossref] [PubMed]

Song, P. K.

N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, “Electrical and optical properties of amorphous indium zinc oxide films,” Thin Solid Films 496(1), 99–103 (2006).
[Crossref]

Su, C. Y.

H. C. Pan, M. H. Shiao, C. Y. Su, and C. N. Hsiao, “Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films,” J. Vac. Sci. Technol. A 23(4), 1187 (2005).
[Crossref]

Sun, J.

J. Sun, W. Yang, Y. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, “Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,” J. Appl. Phys. 112(8), 083709 (2012).
[Crossref]

J. Sun, W. S. Lai, and H. Gong, “Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide,” J. Appl. Phys. 111(8), 083712 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
[Crossref] [PubMed]

Takagi, A.

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Tang, X.

X. Tang, W. B. A. Ho, and J. M. Xue, “Synthesis of Zn-Doped AgInS2 Nanocrystals and Their Fluorescence Properties,” J. Phys. Chem. C 116(17), 9769–9773 (2012).
[Crossref]

Tarascon, J. M.

C. Marcel, N. Naghavi, G. Couturier, J. Salardenne, and J. M. Tarascon, “Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films,” J. Appl. Phys. 91(7), 4291 (2002).
[Crossref]

van Hest, M. F. A. M.

A. J. Leenheer, J. D. Perkins, M. F. A. M. van Hest, J. J. Berry, R. P. O’Hayre, and D. S. Ginley, “General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films,” Phys. Rev. B 77(11), 115215 (2008).
[Crossref]

Varela, J. A.

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Wang, C. F.

J. Sun, W. Yang, Y. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, “Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,” J. Appl. Phys. 112(8), 083709 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
[Crossref] [PubMed]

Wang, L.

L. Wang, M. H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, “High-performance transparent inorganic-organic hybrid thin-film n-type transistors,” Nat. Mater. 5(11), 893–900 (2006).
[Crossref] [PubMed]

Wang, S. J.

W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
[Crossref] [PubMed]

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

Wong, L. M.

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
[Crossref] [PubMed]

Wu, Z. Y.

W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
[Crossref] [PubMed]

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

Xie, Y. N.

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
[Crossref] [PubMed]

Xue, J. M.

X. Tang, W. B. A. Ho, and J. M. Xue, “Synthesis of Zn-Doped AgInS2 Nanocrystals and Their Fluorescence Properties,” J. Phys. Chem. C 116(17), 9769–9773 (2012).
[Crossref]

Yang, W.

J. Sun, W. Yang, Y. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, “Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,” J. Appl. Phys. 112(8), 083709 (2012).
[Crossref]

Yang, W. F.

W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Enhancement of bandgap emission of Pt-capped MgZnO films: Important role of light extraction versus exciton-plasmon coupling,” Opt. Express 20(13), 14556–14563 (2012).
[Crossref] [PubMed]

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

Yang, Y.

L. Wang, M. H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, “High-performance transparent inorganic-organic hybrid thin-film n-type transistors,” Nat. Mater. 5(11), 893–900 (2006).
[Crossref] [PubMed]

Yoon, M. H.

L. Wang, M. H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, “High-performance transparent inorganic-organic hybrid thin-film n-type transistors,” Nat. Mater. 5(11), 893–900 (2006).
[Crossref] [PubMed]

Zhang, W.

X. Gu, T. Qiu, W. Zhang, and P. K. Chu, “Light-emitting diodes enhanced by localized surface plasmon resonance,” Nanoscale Res. Lett. 6(1), 199 (2011).
[Crossref] [PubMed]

Appl. Phys. Lett. (3)

W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, “Investigating addition effect of hafnium in InZnO thin film transistors using a solution process,” Appl. Phys. Lett. 96(9), 093503 (2010).
[Crossref]

H. S. Choi and S. Jeon, “Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination,” Appl. Phys. Lett. 104(2), 023505 (2014).
[Crossref]

I. Kosacki, V. Petrovsky, and H. U. Anderson, “Band gap energy in nanocrystalline ZrO2: 16%Y thin films,” Appl. Phys. Lett. 74(3), 341 (1999).
[Crossref]

Europhys. Lett. (1)

W. F. Yang, Y. N. Xie, Z. Y. Pan, M. H. Hong, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, A. Y. S. Lee, and H. Gong, “Temperature-dependent exciton luminescence from an Au-nanopattern-coated ZnCdO film,” Europhys. Lett. 99(2), 27003 (2012).
[Crossref]

J. Appl. Phys. (3)

C. Marcel, N. Naghavi, G. Couturier, J. Salardenne, and J. M. Tarascon, “Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films,” J. Appl. Phys. 91(7), 4291 (2002).
[Crossref]

J. Sun, W. Yang, Y. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, “Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,” J. Appl. Phys. 112(8), 083709 (2012).
[Crossref]

J. Sun, W. S. Lai, and H. Gong, “Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide,” J. Appl. Phys. 111(8), 083712 (2012).
[Crossref]

J. Korean Phys. Soc. (1)

D. H. Shin, H. T. Oh, S. H. Choi, J. W. Park, and H. Lee, “Surface-plasmon-mediated Enhancement of Photoluminescence from Hybrid Structures of Indium Zinc Oxide/Ag/Indium Zinc Oxide,” J. Korean Phys. Soc. 56(4), 1164 (2010).
[Crossref]

J. Non-Cryst. Solids (1)

R. Martins, P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferriera, and E. Fortunato, “Electron transport and optical characteristics in amorphous indium zinc oxide films,” J. Non-Cryst. Solids 352(9-20), 1471–1474 (2006).
[Crossref]

J. Phys. Chem. C (1)

X. Tang, W. B. A. Ho, and J. M. Xue, “Synthesis of Zn-Doped AgInS2 Nanocrystals and Their Fluorescence Properties,” J. Phys. Chem. C 116(17), 9769–9773 (2012).
[Crossref]

J. Vac. Sci. Technol. A (1)

H. C. Pan, M. H. Shiao, C. Y. Su, and C. N. Hsiao, “Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films,” J. Vac. Sci. Technol. A 23(4), 1187 (2005).
[Crossref]

Mater. Chem. Phys. (1)

F. M. Pontes, E. Longo, E. R. Leite, E. J. H. Lee, J. A. Varela, P. S. Pizani, C. E. M. Campos, F. Lanciotti, V. Mastellaro, and C. D. Pinheiro, “Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition,” Mater. Chem. Phys. 77(2), 598–602 (2003).
[Crossref]

Nanoscale Res. Lett. (1)

X. Gu, T. Qiu, W. Zhang, and P. K. Chu, “Light-emitting diodes enhanced by localized surface plasmon resonance,” Nanoscale Res. Lett. 6(1), 199 (2011).
[Crossref] [PubMed]

Nat. Mater. (1)

L. Wang, M. H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, “High-performance transparent inorganic-organic hybrid thin-film n-type transistors,” Nat. Mater. 5(11), 893–900 (2006).
[Crossref] [PubMed]

Nature (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Opt. Commun. (1)

K. Ramamoorthy, K. Kumar, R. Chandramohan, K. Sankaranarayanan, R. Saravanan, I. V. Kityk, and P. Ramasamy, “High optical quality IZO (In2Zn2O5) thin films by PLD - A novel development for III-V opto-electronic devices,” Opt. Commun. 262(1), 91–96 (2006).
[Crossref]

Opt. Express (1)

Phys. Rev. B (1)

A. J. Leenheer, J. D. Perkins, M. F. A. M. van Hest, J. J. Berry, R. P. O’Hayre, and D. S. Ginley, “General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films,” Phys. Rev. B 77(11), 115215 (2008).
[Crossref]

Spectrochim. Acta A Mol. Biomol. Spectrosc. (1)

S. L. Smitha, K. M. Nissamudeen, D. Philip, and K. G. Gopchandran, “Studies on surface plasmon resonance and photoluminescence of silver nanoparticles,” Spectrochim. Acta A Mol. Biomol. Spectrosc. 71(1), 186–190 (2008).
[Crossref] [PubMed]

Thin Solid Films (1)

N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, “Electrical and optical properties of amorphous indium zinc oxide films,” Thin Solid Films 496(1), 99–103 (2006).
[Crossref]

Other (2)

S. Kasap, Principles of Electronic Materials and Devices (McGraw-Hill, 2006).

I. Pelant and J. Valenta, Luminescence Spectroscopy of Semiconductors (Oxford University Press Inc., 2012).

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Figures (5)

Fig. 1
Fig. 1 (a) XRD patterns of the Ag embedded a-IZO samples in the 2θ range of 20°-80°; (b) A cross-sectional FESEM image of sample Ag8.
Fig. 2
Fig. 2 SIMS depth profile spectra for samples: Ag1, Ag2, Ag8 and Ag16, respectively.
Fig. 3
Fig. 3 (a) PL spectra of the Ag embedded a-IZO samples; (b) The variation of the PL peak intensity as a function of Ag nominal thickness; PL spectra of sample IZO (Ag0), Ag1, Ag2, Ag8 and Ag16 can be deconvoluted into two resolved peaks at ~398nm and ~450nm, shown in Figs. 3(c)–(g), respectively; (h) The peak intensity of the two resolved peaks at ~398nm and ~450nm as a function of Ag nominal thickness.
Fig. 4
Fig. 4 (a) Plot of the variation of (αhν)2 with photon energy for the bare IZO sample. The direct optical gap is obtained by extrapolating to the energy axis as shown. (b) Absorption spectrum of sample Ag1.
Fig. 5
Fig. 5 The PL relaxations of sample IZO, Ag2 and Ag8. The three solid lines denote the fitting of each decay curve.

Tables (1)

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Table 1 The fit parameters of the relaxation plots. The parameters are derived from the equation I(t) = A1exp(-t/τ1) + A2exp(-t/τ2).

Equations (5)

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( αhν )=B ( hν- E g ) 1/2
η ext = η int × η extraction
η int ( IZO ) = ( 1/ τ R )/[ ( 1/ τ R )+ ( 1/ τ NR ) ]
η int ( AgIZO ) = [ ( 1/ τ * R )+ ( 1/ τ LSP ) ]/[ ( 1/ τ * R )+ ( 1/ τ LSP ) +( 1/ τ * NR ) ],
I( t )= A 1 exp( t/ τ 1 )+ A 2 exp( t/ τ 2 )

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