J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, U. Hommerich, J. T. Seo, R. G. Wilson, and J. M. Zavada, “Er doping of GaN during growth by metalorganic molecular beam epitaxy,” Appl. Phys. Lett. 72(21), 2710–2712 (1998).
[Crossref]
X. Wu, U. Hommerich, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, R. Schwartz, R. G. Wilson, and J. M. Zavada, “Direct and indirect excitation of Er3+ ions in Er: AIN,” Appl. Phys. Lett. 70(16), 2126 (1997).
[Crossref]
R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]
K. Iida, T. Kawashima, A. Miyake, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE,” J. Cryst. Growth 272(1-4), 270–273 (2004).
[Crossref]
T. M. Al tahtamouni, M. Stachowicz, J. Li, J. Y. Lin, and H. X. Jiang, “Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures,” Appl. Phys. Lett. 106(12), 121106 (2015).
[Crossref]
T. M. Al tahtamouni, X. Du, J. Li, J. Lin, and H. Jiang, “Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition,” Opt. Mater. Express 5(2), 274 (2015).
[Crossref]
T. M. Al tahtamouni, X. Du, J. Lin, and H. Jiang, “Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition,” Opt. Mater. Express 5(3), 648 (2015).
[Crossref]
K. Iida, T. Kawashima, A. Miyake, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE,” J. Cryst. Growth 272(1-4), 270–273 (2004).
[Crossref]
T. Arai, D. Timmerman, R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara, “Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy,” J. Lumin. 158, 70–74 (2015).
[Crossref]
H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
[Crossref]
A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compd. Semicond. 6(1), 48–52 (2000).
M. Garter, J. Scofield, R. Birkhahn, and A. J. Steckl, “Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si,” Appl. Phys. Lett. 74(2), 182 (1999).
[Crossref]
A. J. Steckl, M. Garter, R. Birkhahn, and J. Scofield, “Green electroluminescence from Er-doped GaN Schottky barrier diodes,” Appl. Phys. Lett. 73(17), 2450 (1998).
[Crossref]
R. H. Birkhahn, R. Hudgins, D. S. Lee, B. K. Lee, A. J. Steckl, A. Saleh, R. G. Wilson, and J. M. Zavada, “Optical and structural properties of Er3+-doped GaN grown by MBE,” MRS Internet J. Nitride Semicond. Res. 4S1, 537, 80 (1999).
S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, S. G. Bishop, and P. B. Klein, “Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN,” Appl. Phys. Lett. 71(18), 2662–2664 (1997).
[Crossref]
D. M. Hansen, R. Zhang, N. R. Perkins, S. Safvi, L. Zhang, K. L. Bray, and T. F. Kuech, “Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er,” Appl. Phys. Lett. 72(10), 1244 (1998).
[Crossref]
H. J. Lozykowski, W. M. Jadwisienczak, and I. Brown, “Photoluminescence and cathodoluminescence of GaN doped with Pr,” J. Appl. Phys. 88(1), 210 (2000).
[Crossref]
S. Son, S. Kim, Y. H. Kim, I. K. Han, Y. T. Kim, A. Wakahara, I. H. Choi, and H. C. Lopez, “Photoluminescence of Er-implanted GaN,” J. Korean Phys. Soc. 45, 955 (2004).
J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061–1063 (2004).
[Crossref]
S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, S. G. Bishop, and P. B. Klein, “Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN,” Appl. Phys. Lett. 71(18), 2662–2664 (1997).
[Crossref]
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “1.54 μm emitters based on erbium doped InGaN p-i-n junctions,” Appl. Phys. Lett. 97(14), 141109 (2010).
[Crossref]
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN optical amplifiers operating at 1.54 μm,” Appl. Phys. Lett. 95(11), 111109 (2009).
[Crossref]
T. Ishiyama, S. Yoneyama, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, and K. Okuno, “Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe,” Physica B 376-377, 122–125 (2006).
[Crossref]
T. M. Al tahtamouni, X. Du, J. Lin, and H. Jiang, “Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition,” Opt. Mater. Express 5(3), 648 (2015).
[Crossref]
T. M. Al tahtamouni, X. Du, J. Li, J. Lin, and H. Jiang, “Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition,” Opt. Mater. Express 5(2), 274 (2015).
[Crossref]
H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
[Crossref]
P. N. Favennec, H. L’Haridon, D. Moutonnet, M. Salvi, and M. Gauneau, “Optical Activation of Er3+ Implanted in Silicon by Oxygen Impurities,” Jpn. J. Appl. Phys. 29(Part 2), L524–L526 (1990).
[Crossref]
P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]
I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. Zavada, “Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers,” Appl. Phys. Lett. 96(3), 031908 (2010).
[Crossref]
J. T. Torvik, C. H. Qiu, R. J. Feurstein, J. I. Pankove, and F. Namavar, “Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN,” J. Appl. Phys. 81(9), 6343 (1997).
[Crossref]
C. H. Qiu, M. W. Leksono, J. I. Pankove, J. T. Torvik, R. J. Feurstein, and F. Namavar, “Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates,” Appl. Phys. Lett. 66(5), 562 (1995).
[Crossref]
R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]
T. Arai, D. Timmerman, R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara, “Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy,” J. Lumin. 158, 70–74 (2015).
[Crossref]
A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compd. Semicond. 6(1), 48–52 (2000).
M. Garter, J. Scofield, R. Birkhahn, and A. J. Steckl, “Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si,” Appl. Phys. Lett. 74(2), 182 (1999).
[Crossref]
A. J. Steckl, M. Garter, R. Birkhahn, and J. Scofield, “Green electroluminescence from Er-doped GaN Schottky barrier diodes,” Appl. Phys. Lett. 73(17), 2450 (1998).
[Crossref]
P. N. Favennec, H. L’Haridon, D. Moutonnet, M. Salvi, and M. Gauneau, “Optical Activation of Er3+ Implanted in Silicon by Oxygen Impurities,” Jpn. J. Appl. Phys. 29(Part 2), L524–L526 (1990).
[Crossref]
S. Son, S. Kim, Y. H. Kim, I. K. Han, Y. T. Kim, A. Wakahara, I. H. Choi, and H. C. Lopez, “Photoluminescence of Er-implanted GaN,” J. Korean Phys. Soc. 45, 955 (2004).
D. M. Hansen, R. Zhang, N. R. Perkins, S. Safvi, L. Zhang, K. L. Bray, and T. F. Kuech, “Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er,” Appl. Phys. Lett. 72(10), 1244 (1998).
[Crossref]
T. Ishiyama, S. Yoneyama, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, and K. Okuno, “Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe,” Physica B 376-377, 122–125 (2006).
[Crossref]
A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compd. Semicond. 6(1), 48–52 (2000).
J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061–1063 (2004).
[Crossref]
J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, U. Hommerich, J. T. Seo, R. G. Wilson, and J. M. Zavada, “Er doping of GaN during growth by metalorganic molecular beam epitaxy,” Appl. Phys. Lett. 72(21), 2710–2712 (1998).
[Crossref]
X. Wu, U. Hommerich, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, R. Schwartz, R. G. Wilson, and J. M. Zavada, “Direct and indirect excitation of Er3+ ions in Er: AIN,” Appl. Phys. Lett. 70(16), 2126 (1997).
[Crossref]
R. H. Birkhahn, R. Hudgins, D. S. Lee, B. K. Lee, A. J. Steckl, A. Saleh, R. G. Wilson, and J. M. Zavada, “Optical and structural properties of Er3+-doped GaN grown by MBE,” MRS Internet J. Nitride Semicond. Res. 4S1, 537, 80 (1999).
K. Iida, T. Kawashima, A. Miyake, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE,” J. Cryst. Growth 272(1-4), 270–273 (2004).
[Crossref]
T. Ishiyama, S. Yoneyama, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, and K. Okuno, “Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe,” Physica B 376-377, 122–125 (2006).
[Crossref]
T. Ishiyama, S. Yoneyama, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, and K. Okuno, “Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe,” Physica B 376-377, 122–125 (2006).
[Crossref]
K. Iida, T. Kawashima, A. Miyake, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE,” J. Cryst. Growth 272(1-4), 270–273 (2004).
[Crossref]
H. J. Lozykowski, W. M. Jadwisienczak, and I. Brown, “Photoluminescence and cathodoluminescence of GaN doped with Pr,” J. Appl. Phys. 88(1), 210 (2000).
[Crossref]
T. M. Al tahtamouni, X. Du, J. Li, J. Lin, and H. Jiang, “Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition,” Opt. Mater. Express 5(2), 274 (2015).
[Crossref]
T. M. Al tahtamouni, X. Du, J. Lin, and H. Jiang, “Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition,” Opt. Mater. Express 5(3), 648 (2015).
[Crossref]
T. M. Al tahtamouni, M. Stachowicz, J. Li, J. Y. Lin, and H. X. Jiang, “Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures,” Appl. Phys. Lett. 106(12), 121106 (2015).
[Crossref]
I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. Zavada, “Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers,” Appl. Phys. Lett. 96(3), 031908 (2010).
[Crossref]
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “1.54 μm emitters based on erbium doped InGaN p-i-n junctions,” Appl. Phys. Lett. 97(14), 141109 (2010).
[Crossref]
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN optical amplifiers operating at 1.54 μm,” Appl. Phys. Lett. 95(11), 111109 (2009).
[Crossref]
C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]
J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061–1063 (2004).
[Crossref]
J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061–1063 (2004).
[Crossref]
T. Ishiyama, S. Yoneyama, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, and K. Okuno, “Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe,” Physica B 376-377, 122–125 (2006).
[Crossref]
K. Iida, T. Kawashima, A. Miyake, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE,” J. Cryst. Growth 272(1-4), 270–273 (2004).
[Crossref]
K. Iida, T. Kawashima, A. Miyake, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE,” J. Cryst. Growth 272(1-4), 270–273 (2004).
[Crossref]
P. G. Kik and A. Polman, “Erbium-Doped Optical-Waveguide Amplifiers on Silicon,” MRS Bull. 23(04), 48–54 (1998).
[Crossref]
S. Son, S. Kim, Y. H. Kim, I. K. Han, Y. T. Kim, A. Wakahara, I. H. Choi, and H. C. Lopez, “Photoluminescence of Er-implanted GaN,” J. Korean Phys. Soc. 45, 955 (2004).
S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, S. G. Bishop, and P. B. Klein, “Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN,” Appl. Phys. Lett. 71(18), 2662–2664 (1997).
[Crossref]
S. Son, S. Kim, Y. H. Kim, I. K. Han, Y. T. Kim, A. Wakahara, I. H. Choi, and H. C. Lopez, “Photoluminescence of Er-implanted GaN,” J. Korean Phys. Soc. 45, 955 (2004).
S. Son, S. Kim, Y. H. Kim, I. K. Han, Y. T. Kim, A. Wakahara, I. H. Choi, and H. C. Lopez, “Photoluminescence of Er-implanted GaN,” J. Korean Phys. Soc. 45, 955 (2004).
S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, S. G. Bishop, and P. B. Klein, “Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN,” Appl. Phys. Lett. 71(18), 2662–2664 (1997).
[Crossref]
T. Arai, D. Timmerman, R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara, “Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy,” J. Lumin. 158, 70–74 (2015).
[Crossref]
D. M. Hansen, R. Zhang, N. R. Perkins, S. Safvi, L. Zhang, K. L. Bray, and T. F. Kuech, “Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er,” Appl. Phys. Lett. 72(10), 1244 (1998).
[Crossref]
P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]
P. N. Favennec, H. L’Haridon, D. Moutonnet, M. Salvi, and M. Gauneau, “Optical Activation of Er3+ Implanted in Silicon by Oxygen Impurities,” Jpn. J. Appl. Phys. 29(Part 2), L524–L526 (1990).
[Crossref]
P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]
R. H. Birkhahn, R. Hudgins, D. S. Lee, B. K. Lee, A. J. Steckl, A. Saleh, R. G. Wilson, and J. M. Zavada, “Optical and structural properties of Er3+-doped GaN grown by MBE,” MRS Internet J. Nitride Semicond. Res. 4S1, 537, 80 (1999).
T. Arai, D. Timmerman, R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara, “Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy,” J. Lumin. 158, 70–74 (2015).
[Crossref]
A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compd. Semicond. 6(1), 48–52 (2000).
R. H. Birkhahn, R. Hudgins, D. S. Lee, B. K. Lee, A. J. Steckl, A. Saleh, R. G. Wilson, and J. M. Zavada, “Optical and structural properties of Er3+-doped GaN grown by MBE,” MRS Internet J. Nitride Semicond. Res. 4S1, 537, 80 (1999).
C. H. Qiu, M. W. Leksono, J. I. Pankove, J. T. Torvik, R. J. Feurstein, and F. Namavar, “Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates,” Appl. Phys. Lett. 66(5), 562 (1995).
[Crossref]
T. M. Al tahtamouni, M. Stachowicz, J. Li, J. Y. Lin, and H. X. Jiang, “Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures,” Appl. Phys. Lett. 106(12), 121106 (2015).
[Crossref]
T. M. Al tahtamouni, X. Du, J. Li, J. Lin, and H. Jiang, “Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition,” Opt. Mater. Express 5(2), 274 (2015).
[Crossref]
I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. Zavada, “Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers,” Appl. Phys. Lett. 96(3), 031908 (2010).
[Crossref]
S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, S. G. Bishop, and P. B. Klein, “Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN,” Appl. Phys. Lett. 71(18), 2662–2664 (1997).
[Crossref]
T. M. Al tahtamouni, X. Du, J. Li, J. Lin, and H. Jiang, “Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition,” Opt. Mater. Express 5(2), 274 (2015).
[Crossref]
T. M. Al tahtamouni, X. Du, J. Lin, and H. Jiang, “Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition,” Opt. Mater. Express 5(3), 648 (2015).
[Crossref]
T. M. Al tahtamouni, M. Stachowicz, J. Li, J. Y. Lin, and H. X. Jiang, “Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures,” Appl. Phys. Lett. 106(12), 121106 (2015).
[Crossref]
I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. Zavada, “Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers,” Appl. Phys. Lett. 96(3), 031908 (2010).
[Crossref]
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “1.54 μm emitters based on erbium doped InGaN p-i-n junctions,” Appl. Phys. Lett. 97(14), 141109 (2010).
[Crossref]
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN optical amplifiers operating at 1.54 μm,” Appl. Phys. Lett. 95(11), 111109 (2009).
[Crossref]
C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]
J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061–1063 (2004).
[Crossref]
S. Son, S. Kim, Y. H. Kim, I. K. Han, Y. T. Kim, A. Wakahara, I. H. Choi, and H. C. Lopez, “Photoluminescence of Er-implanted GaN,” J. Korean Phys. Soc. 45, 955 (2004).
H. J. Lozykowski, W. M. Jadwisienczak, and I. Brown, “Photoluminescence and cathodoluminescence of GaN doped with Pr,” J. Appl. Phys. 88(1), 210 (2000).
[Crossref]
J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, U. Hommerich, J. T. Seo, R. G. Wilson, and J. M. Zavada, “Er doping of GaN during growth by metalorganic molecular beam epitaxy,” Appl. Phys. Lett. 72(21), 2710–2712 (1998).
[Crossref]
X. Wu, U. Hommerich, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, R. Schwartz, R. G. Wilson, and J. M. Zavada, “Direct and indirect excitation of Er3+ ions in Er: AIN,” Appl. Phys. Lett. 70(16), 2126 (1997).
[Crossref]
K. Iida, T. Kawashima, A. Miyake, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, “Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE,” J. Cryst. Growth 272(1-4), 270–273 (2004).
[Crossref]
P. N. Favennec, H. L’Haridon, D. Moutonnet, M. Salvi, and M. Gauneau, “Optical Activation of Er3+ Implanted in Silicon by Oxygen Impurities,” Jpn. J. Appl. Phys. 29(Part 2), L524–L526 (1990).
[Crossref]
P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]
J. T. Torvik, C. H. Qiu, R. J. Feurstein, J. I. Pankove, and F. Namavar, “Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN,” J. Appl. Phys. 81(9), 6343 (1997).
[Crossref]
C. H. Qiu, M. W. Leksono, J. I. Pankove, J. T. Torvik, R. J. Feurstein, and F. Namavar, “Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates,” Appl. Phys. Lett. 66(5), 562 (1995).
[Crossref]
C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]
J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061–1063 (2004).
[Crossref]
R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]
T. Ishiyama, S. Yoneyama, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, and K. Okuno, “Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe,” Physica B 376-377, 122–125 (2006).
[Crossref]
J. T. Torvik, C. H. Qiu, R. J. Feurstein, J. I. Pankove, and F. Namavar, “Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN,” J. Appl. Phys. 81(9), 6343 (1997).
[Crossref]
C. H. Qiu, M. W. Leksono, J. I. Pankove, J. T. Torvik, R. J. Feurstein, and F. Namavar, “Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates,” Appl. Phys. Lett. 66(5), 562 (1995).
[Crossref]
J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, U. Hommerich, J. T. Seo, R. G. Wilson, and J. M. Zavada, “Er doping of GaN during growth by metalorganic molecular beam epitaxy,” Appl. Phys. Lett. 72(21), 2710–2712 (1998).
[Crossref]
X. Wu, U. Hommerich, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, R. Schwartz, R. G. Wilson, and J. M. Zavada, “Direct and indirect excitation of Er3+ ions in Er: AIN,” Appl. Phys. Lett. 70(16), 2126 (1997).
[Crossref]
R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]
D. M. Hansen, R. Zhang, N. R. Perkins, S. Safvi, L. Zhang, K. L. Bray, and T. F. Kuech, “Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er,” Appl. Phys. Lett. 72(10), 1244 (1998).
[Crossref]
P. G. Kik and A. Polman, “Erbium-Doped Optical-Waveguide Amplifiers on Silicon,” MRS Bull. 23(04), 48–54 (1998).
[Crossref]
H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
[Crossref]
J. T. Torvik, C. H. Qiu, R. J. Feurstein, J. I. Pankove, and F. Namavar, “Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN,” J. Appl. Phys. 81(9), 6343 (1997).
[Crossref]
C. H. Qiu, M. W. Leksono, J. I. Pankove, J. T. Torvik, R. J. Feurstein, and F. Namavar, “Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates,” Appl. Phys. Lett. 66(5), 562 (1995).
[Crossref]
S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, S. G. Bishop, and P. B. Klein, “Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN,” Appl. Phys. Lett. 71(18), 2662–2664 (1997).
[Crossref]
R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]
D. M. Hansen, R. Zhang, N. R. Perkins, S. Safvi, L. Zhang, K. L. Bray, and T. F. Kuech, “Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er,” Appl. Phys. Lett. 72(10), 1244 (1998).
[Crossref]
R. H. Birkhahn, R. Hudgins, D. S. Lee, B. K. Lee, A. J. Steckl, A. Saleh, R. G. Wilson, and J. M. Zavada, “Optical and structural properties of Er3+-doped GaN grown by MBE,” MRS Internet J. Nitride Semicond. Res. 4S1, 537, 80 (1999).
P. N. Favennec, H. L’Haridon, D. Moutonnet, M. Salvi, and M. Gauneau, “Optical Activation of Er3+ Implanted in Silicon by Oxygen Impurities,” Jpn. J. Appl. Phys. 29(Part 2), L524–L526 (1990).
[Crossref]
P. N. Favennec, H. L’Halidon, M. Salvi, D. Moutonnet, and Y. Le Guillou, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Electron. Lett. 25(11), 718–719 (1989).
[Crossref]
H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, “1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon,” Appl. Phys. Lett. 43(10), 943 (1983).
[Crossref]
X. Wu, U. Hommerich, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, R. Schwartz, R. G. Wilson, and J. M. Zavada, “Direct and indirect excitation of Er3+ ions in Er: AIN,” Appl. Phys. Lett. 70(16), 2126 (1997).
[Crossref]
R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]
M. Garter, J. Scofield, R. Birkhahn, and A. J. Steckl, “Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si,” Appl. Phys. Lett. 74(2), 182 (1999).
[Crossref]
A. J. Steckl, M. Garter, R. Birkhahn, and J. Scofield, “Green electroluminescence from Er-doped GaN Schottky barrier diodes,” Appl. Phys. Lett. 73(17), 2450 (1998).
[Crossref]
I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. Zavada, “Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers,” Appl. Phys. Lett. 96(3), 031908 (2010).
[Crossref]
J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, U. Hommerich, J. T. Seo, R. G. Wilson, and J. M. Zavada, “Er doping of GaN during growth by metalorganic molecular beam epitaxy,” Appl. Phys. Lett. 72(21), 2710–2712 (1998).
[Crossref]
S. Son, S. Kim, Y. H. Kim, I. K. Han, Y. T. Kim, A. Wakahara, I. H. Choi, and H. C. Lopez, “Photoluminescence of Er-implanted GaN,” J. Korean Phys. Soc. 45, 955 (2004).
T. M. Al tahtamouni, M. Stachowicz, J. Li, J. Y. Lin, and H. X. Jiang, “Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures,” Appl. Phys. Lett. 106(12), 121106 (2015).
[Crossref]
A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn, and D. S. Lee, “Rare earth doped gallium nitride — light emission from ultraviolet to infrared,” Compd. Semicond. 6(1), 48–52 (2000).
M. Garter, J. Scofield, R. Birkhahn, and A. J. Steckl, “Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si,” Appl. Phys. Lett. 74(2), 182 (1999).
[Crossref]
R. H. Birkhahn, R. Hudgins, D. S. Lee, B. K. Lee, A. J. Steckl, A. Saleh, R. G. Wilson, and J. M. Zavada, “Optical and structural properties of Er3+-doped GaN grown by MBE,” MRS Internet J. Nitride Semicond. Res. 4S1, 537, 80 (1999).
A. J. Steckl, M. Garter, R. Birkhahn, and J. Scofield, “Green electroluminescence from Er-doped GaN Schottky barrier diodes,” Appl. Phys. Lett. 73(17), 2450 (1998).
[Crossref]
T. Arai, D. Timmerman, R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara, “Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy,” J. Lumin. 158, 70–74 (2015).
[Crossref]
J. T. Torvik, C. H. Qiu, R. J. Feurstein, J. I. Pankove, and F. Namavar, “Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN,” J. Appl. Phys. 81(9), 6343 (1997).
[Crossref]
C. H. Qiu, M. W. Leksono, J. I. Pankove, J. T. Torvik, R. J. Feurstein, and F. Namavar, “Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates,” Appl. Phys. Lett. 66(5), 562 (1995).
[Crossref]
S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, S. G. Bishop, and P. B. Klein, “Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN,” Appl. Phys. Lett. 71(18), 2662–2664 (1997).
[Crossref]
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “1.54 μm emitters based on erbium doped InGaN p-i-n junctions,” Appl. Phys. Lett. 97(14), 141109 (2010).
[Crossref]
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN optical amplifiers operating at 1.54 μm,” Appl. Phys. Lett. 95(11), 111109 (2009).
[Crossref]
C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]
S. Son, S. Kim, Y. H. Kim, I. K. Han, Y. T. Kim, A. Wakahara, I. H. Choi, and H. C. Lopez, “Photoluminescence of Er-implanted GaN,” J. Korean Phys. Soc. 45, 955 (2004).
T. Arai, D. Timmerman, R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara, “Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy,” J. Lumin. 158, 70–74 (2015).
[Crossref]
R. H. Birkhahn, R. Hudgins, D. S. Lee, B. K. Lee, A. J. Steckl, A. Saleh, R. G. Wilson, and J. M. Zavada, “Optical and structural properties of Er3+-doped GaN grown by MBE,” MRS Internet J. Nitride Semicond. Res. 4S1, 537, 80 (1999).
J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, U. Hommerich, J. T. Seo, R. G. Wilson, and J. M. Zavada, “Er doping of GaN during growth by metalorganic molecular beam epitaxy,” Appl. Phys. Lett. 72(21), 2710–2712 (1998).
[Crossref]
X. Wu, U. Hommerich, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, R. Schwartz, R. G. Wilson, and J. M. Zavada, “Direct and indirect excitation of Er3+ ions in Er: AIN,” Appl. Phys. Lett. 70(16), 2126 (1997).
[Crossref]
R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]
X. Wu, U. Hommerich, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, R. Schwartz, R. G. Wilson, and J. M. Zavada, “Direct and indirect excitation of Er3+ ions in Er: AIN,” Appl. Phys. Lett. 70(16), 2126 (1997).
[Crossref]
T. Ishiyama, S. Yoneyama, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, and K. Okuno, “Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe,” Physica B 376-377, 122–125 (2006).
[Crossref]
T. Ishiyama, S. Yoneyama, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, and K. Okuno, “Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe,” Physica B 376-377, 122–125 (2006).
[Crossref]
I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. Zavada, “Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers,” Appl. Phys. Lett. 96(3), 031908 (2010).
[Crossref]
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “1.54 μm emitters based on erbium doped InGaN p-i-n junctions,” Appl. Phys. Lett. 97(14), 141109 (2010).
[Crossref]
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN optical amplifiers operating at 1.54 μm,” Appl. Phys. Lett. 95(11), 111109 (2009).
[Crossref]
C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89(15), 151903 (2006).
[Crossref]
J. M. Zavada, S. X. Jin, N. Nepal, H. X. Jiang, J. Y. Lin, P. Chow, and B. Hertog, “Electroluminescent properties of erbium-doped III–N light-emitting diodes,” Appl. Phys. Lett. 84(7), 1061–1063 (2004).
[Crossref]
R. H. Birkhahn, R. Hudgins, D. S. Lee, B. K. Lee, A. J. Steckl, A. Saleh, R. G. Wilson, and J. M. Zavada, “Optical and structural properties of Er3+-doped GaN grown by MBE,” MRS Internet J. Nitride Semicond. Res. 4S1, 537, 80 (1999).
J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, U. Hommerich, J. T. Seo, R. G. Wilson, and J. M. Zavada, “Er doping of GaN during growth by metalorganic molecular beam epitaxy,” Appl. Phys. Lett. 72(21), 2710–2712 (1998).
[Crossref]
X. Wu, U. Hommerich, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, R. Schwartz, R. G. Wilson, and J. M. Zavada, “Direct and indirect excitation of Er3+ ions in Er: AIN,” Appl. Phys. Lett. 70(16), 2126 (1997).
[Crossref]
R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54‐μm photoluminescence from Er‐implanted GaN and AlN,” Appl. Phys. Lett. 65(8), 992 (1994).
[Crossref]
D. M. Hansen, R. Zhang, N. R. Perkins, S. Safvi, L. Zhang, K. L. Bray, and T. F. Kuech, “Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er,” Appl. Phys. Lett. 72(10), 1244 (1998).
[Crossref]
D. M. Hansen, R. Zhang, N. R. Perkins, S. Safvi, L. Zhang, K. L. Bray, and T. F. Kuech, “Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er,” Appl. Phys. Lett. 72(10), 1244 (1998).
[Crossref]