Abstract

Silicon carbide (SiC) is promising as a key material for power electronics devices owing to its wide bandgap property. Meanwhile, by the convention wire-saw technique, it is difficult to slice off a thin wafer from bulk SiC crystal without reserving space for cutting. In this study, we have achieved exfoliation of 4H-SiC single crystal by the femtosecond laser induced slicing method. By using this technique, the exfoliated surface with the root-mean-square roughness of 5 μm and the cutting-loss thickness smaller than 24 μm was successfully achieved. We have also observed the nanostructure on the exfoliated surface in SiC crystal.

© 2017 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  34. J. Liu and Y. K. Vohra, “Raman modes of 6H polytype of silicon carbide to ultrahigh pressures: A comparison with silicon and diamond,” Phys. Rev. Lett. 72(26), 4105–4108 (1994).
    [Crossref] [PubMed]

2017 (1)

F. De Leonardis, R. A. Soref, and V. M. N. Passaro, “Dispersion of nonresonant third-order nonlinearities in Silicon Carbide,” Sci. Rep. 7, 40924 (2017).
[Crossref] [PubMed]

2016 (2)

S. Nakashima, T. Mitani, M. Tomobe, T. Kato, and H. Okumura, “Raman characterization of damaged layers of 4H-SiC induced by scratching,” AIP Adv. 6(1), 015207 (2016).
[Crossref]

E. Kim, Y. Shimotsuma, M. Sakakura, and K. Miura, “Ultrashort pulse laser slicing of semiconductor crystal,” Proc. SPIE 9983, 99831B (2016).
[Crossref]

2015 (1)

M. Mori, Y. Shimotsuma, T. Sei, M. Sakakura, K. Miura, and H. Udono, “Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing,” Phys. Status Solidi., A Appl. Mater. Sci. 212(4), 715–721 (2015).
[Crossref]

2014 (1)

V. P. Amarasinghe, L. Wielunski, A. Barcz, L. C. Feldman, and G. K. Celler, “Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films,” ECS J. Solid State Sci. Technol. 3(3), 37–42 (2014).
[Crossref]

2012 (1)

J. H. Lee, I. Bargatin, J. Park, K. M. Milaninia, L. S. Theogarajan, R. Sinclair, and R. T. Howe, “Smart-cut layer transfer of single-crystal SiC using spin-on-glass,” J. Vac. Sci. Technol. B 30(4), 042001 (2012).
[Crossref]

2011 (1)

2010 (1)

P. Ščajev, V. Gudelis, K. Jarašiūnas, and P. B. Klein, “Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature,” J. Appl. Phys. 108(2), 023705 (2010).
[Crossref]

2009 (2)

M. Shimizu, Y. Shimotsuma, M. Sakakura, T. Yuasa, H. Homma, Y. Minowa, K. Tanaka, K. Miura, and K. Hirao, “Periodic metallo-dielectric structure in diamond,” Opt. Express 17(1), 46–54 (2009).
[Crossref] [PubMed]

T. Okada, T. Tomita, S. Matsuo, S. Hashimoto, Y. Ishida, S. Kiyama, and T. Takahashi, “Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation,” J. Appl. Phys. 106(5), 054307 (2009).
[Crossref]

2007 (1)

S. Nakashima, T. Kitamura, T. Mitani, H. Okumura, M. Katsuno, and N. Ohtani, “Raman scattering study of carrier-transport and phonon properties of 4H−SiC crystals with graded doping,” Phys. Rev. B 76(24), 245208 (2007).
[Crossref]

2006 (1)

E. Ohmura, F. Fukuyo, K. Fukumitsu, and H. Morita, “Internal modified-layer formation mechanism into silicon with nanosecond laser,” JAMME 17(1), 381–384 (2006).

2005 (1)

S. B. Lee, Y. Tani, T. Enomoto, and H. Sato, “Development of a dicing blade with photopolymerizable resins for improving machinability,” Ann. CIRP 54(1), 293–296 (2005).
[Crossref]

2004 (1)

T. Tomita, S. Saito, T. Suemoto, H. Harima, and S. Nakashima, “Structure dependent ultrafast relaxation time of photo-excited carriers in SiC,” J. Phys. Soc. Jpn. 73(9), 2554–2561 (2004).
[Crossref]

2003 (1)

Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-organized nanogratings in glass irradiated by ultrashort light pulses,” Phys. Rev. Lett. 91(24), 247405 (2003).
[Crossref] [PubMed]

2002 (2)

W. Peng, X. F. Xu, and L. F. Zhang, “Improvement of a dicing blade using a whisker direction-controlled by an electric field,” J. Mater. Process. Technol. 129(1), 377–379 (2002).
[Crossref]

J. Faure, V. Malka, J. R. Marqués, P. G. David, F. Amiranoff, K. Ta Phuoc, and A. Rousse, “Effects of pulse duration on self-focusing of ultra-short lasers in underdense plasmas,” Phys. Plasmas 9(3), 756–759 (2002).
[Crossref]

2001 (1)

I. H. Cho, S. C. Jeong, J. M. Park, and H. D. Jeong, “The application of micro-groove machining for the model of PDP barrier ribs,” J. Mater. Process. Technol. 113(1), 355–359 (2001).
[Crossref]

2000 (2)

S. Nakashima, Y. Nakatake, H. Harima, M. Katsuo, and N. Ohtani, “Detection of stacking faults in 6H-SiC by Raman scattering,” Appl. Phys. Lett. 77(22), 3612–3614 (2000).
[Crossref]

A. C. Ferrari and J. Robertson, “Interpretation of Raman spectra of disordered and amorphous carbon,” Phys. Rev. B 61(20), 14095–14107 (2000).
[Crossref]

1999 (1)

J. C. Burton, L. Sun, F. H. Long, Z. C. Feng, and I. T. Ferguson, “First- and second-order Raman scattering from semi-insulating 4H−SiC,” Phys. Rev. B 59(11), 7282–7284 (1999).
[Crossref]

1998 (1)

J. C. Burton, L. Sun, M. Pophristic, S. J. Lukacs, F. H. Long, Z. C. Feng, and I. T. Ferguson, “Spatial characterization of doped SiC wafers by Raman spectroscopy,” J. Appl. Phys. 84(11), 6268–6273 (1998).
[Crossref]

1997 (1)

L. Di Cioccio, F. Letertre, Y. Le Tiec, A. M. Papon, C. Jaussaud, and M. Bruel, “Silicon carbide on insulator formation by the Smart-Cut®process,” Mater. Sci. Eng. B 46(1), 349–356 (1997).
[Crossref]

1996 (2)

K. M. Davis, K. Miura, N. Sugimoto, and K. Hirao, “Writing waveguides in glass with a femtosecond laser,” Opt. Lett. 21(21), 1729–1731 (1996).
[Crossref] [PubMed]

J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt, and S. R. P. Silva, “Raman spectroscopy on amorphous carbon films,” J. Appl. Phys. 80(1), 440–447 (1996).
[Crossref]

1994 (1)

J. Liu and Y. K. Vohra, “Raman modes of 6H polytype of silicon carbide to ultrahigh pressures: A comparison with silicon and diamond,” Phys. Rev. Lett. 72(26), 4105–4108 (1994).
[Crossref] [PubMed]

1991 (1)

J. Ikeno, Y. Tani, A. Fukutani, and H. Sato, “Development of chipping-free dicing technology applying electrophoretic deposition of ultrafine abrasives,” Ann. CIRP 40(1), 351–354 (1991).
[Crossref]

1975 (1)

J. H. Marburger, “Self-focusing: Theory,” Prog. Quantum Electron. 4(1), 35–110 (1975).
[Crossref]

1968 (1)

D. W. Feldman, J. H. Parker, W. J. Choyke, and L. Patrick, “Phonon dispersion curves by Raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R,” Phys. Rev. 173(3), 787–793 (1968).
[Crossref]

1965 (1)

E. Biedermann, “The optical absorption bands and their anisotropy in the various modifications of SiC,” Solid State Commun. 3(10), 343–346 (1965).
[Crossref]

1952 (2)

R. N. Hall, “Electron-hole recombination in germanium,” Phys. Rev. 87(2), 387 (1952).
[Crossref]

W. Shockley and W. T. Read., “Statistics of the recombinations of holes and electrons,” Phys. Rev. 87(5), 835–842 (1952).
[Crossref]

Amarasinghe, V. P.

V. P. Amarasinghe, L. Wielunski, A. Barcz, L. C. Feldman, and G. K. Celler, “Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films,” ECS J. Solid State Sci. Technol. 3(3), 37–42 (2014).
[Crossref]

Amiranoff, F.

J. Faure, V. Malka, J. R. Marqués, P. G. David, F. Amiranoff, K. Ta Phuoc, and A. Rousse, “Effects of pulse duration on self-focusing of ultra-short lasers in underdense plasmas,” Phys. Plasmas 9(3), 756–759 (2002).
[Crossref]

Barcz, A.

V. P. Amarasinghe, L. Wielunski, A. Barcz, L. C. Feldman, and G. K. Celler, “Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films,” ECS J. Solid State Sci. Technol. 3(3), 37–42 (2014).
[Crossref]

Bargatin, I.

J. H. Lee, I. Bargatin, J. Park, K. M. Milaninia, L. S. Theogarajan, R. Sinclair, and R. T. Howe, “Smart-cut layer transfer of single-crystal SiC using spin-on-glass,” J. Vac. Sci. Technol. B 30(4), 042001 (2012).
[Crossref]

Batori, V.

J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt, and S. R. P. Silva, “Raman spectroscopy on amorphous carbon films,” J. Appl. Phys. 80(1), 440–447 (1996).
[Crossref]

Biedermann, E.

E. Biedermann, “The optical absorption bands and their anisotropy in the various modifications of SiC,” Solid State Commun. 3(10), 343–346 (1965).
[Crossref]

Bruel, M.

L. Di Cioccio, F. Letertre, Y. Le Tiec, A. M. Papon, C. Jaussaud, and M. Bruel, “Silicon carbide on insulator formation by the Smart-Cut®process,” Mater. Sci. Eng. B 46(1), 349–356 (1997).
[Crossref]

Burton, J. C.

J. C. Burton, L. Sun, F. H. Long, Z. C. Feng, and I. T. Ferguson, “First- and second-order Raman scattering from semi-insulating 4H−SiC,” Phys. Rev. B 59(11), 7282–7284 (1999).
[Crossref]

J. C. Burton, L. Sun, M. Pophristic, S. J. Lukacs, F. H. Long, Z. C. Feng, and I. T. Ferguson, “Spatial characterization of doped SiC wafers by Raman spectroscopy,” J. Appl. Phys. 84(11), 6268–6273 (1998).
[Crossref]

Celler, G. K.

V. P. Amarasinghe, L. Wielunski, A. Barcz, L. C. Feldman, and G. K. Celler, “Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films,” ECS J. Solid State Sci. Technol. 3(3), 37–42 (2014).
[Crossref]

Cho, I. H.

I. H. Cho, S. C. Jeong, J. M. Park, and H. D. Jeong, “The application of micro-groove machining for the model of PDP barrier ribs,” J. Mater. Process. Technol. 113(1), 355–359 (2001).
[Crossref]

Choyke, W. J.

D. W. Feldman, J. H. Parker, W. J. Choyke, and L. Patrick, “Phonon dispersion curves by Raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R,” Phys. Rev. 173(3), 787–793 (1968).
[Crossref]

David, P. G.

J. Faure, V. Malka, J. R. Marqués, P. G. David, F. Amiranoff, K. Ta Phuoc, and A. Rousse, “Effects of pulse duration on self-focusing of ultra-short lasers in underdense plasmas,” Phys. Plasmas 9(3), 756–759 (2002).
[Crossref]

Davis, K. M.

De Leonardis, F.

F. De Leonardis, R. A. Soref, and V. M. N. Passaro, “Dispersion of nonresonant third-order nonlinearities in Silicon Carbide,” Sci. Rep. 7, 40924 (2017).
[Crossref] [PubMed]

Di Cioccio, L.

L. Di Cioccio, F. Letertre, Y. Le Tiec, A. M. Papon, C. Jaussaud, and M. Bruel, “Silicon carbide on insulator formation by the Smart-Cut®process,” Mater. Sci. Eng. B 46(1), 349–356 (1997).
[Crossref]

Ehrhardt, H.

J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt, and S. R. P. Silva, “Raman spectroscopy on amorphous carbon films,” J. Appl. Phys. 80(1), 440–447 (1996).
[Crossref]

Enomoto, T.

S. B. Lee, Y. Tani, T. Enomoto, and H. Sato, “Development of a dicing blade with photopolymerizable resins for improving machinability,” Ann. CIRP 54(1), 293–296 (2005).
[Crossref]

Faure, J.

J. Faure, V. Malka, J. R. Marqués, P. G. David, F. Amiranoff, K. Ta Phuoc, and A. Rousse, “Effects of pulse duration on self-focusing of ultra-short lasers in underdense plasmas,” Phys. Plasmas 9(3), 756–759 (2002).
[Crossref]

Feldman, D. W.

D. W. Feldman, J. H. Parker, W. J. Choyke, and L. Patrick, “Phonon dispersion curves by Raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R,” Phys. Rev. 173(3), 787–793 (1968).
[Crossref]

Feldman, L. C.

V. P. Amarasinghe, L. Wielunski, A. Barcz, L. C. Feldman, and G. K. Celler, “Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films,” ECS J. Solid State Sci. Technol. 3(3), 37–42 (2014).
[Crossref]

Feng, Z. C.

J. C. Burton, L. Sun, F. H. Long, Z. C. Feng, and I. T. Ferguson, “First- and second-order Raman scattering from semi-insulating 4H−SiC,” Phys. Rev. B 59(11), 7282–7284 (1999).
[Crossref]

J. C. Burton, L. Sun, M. Pophristic, S. J. Lukacs, F. H. Long, Z. C. Feng, and I. T. Ferguson, “Spatial characterization of doped SiC wafers by Raman spectroscopy,” J. Appl. Phys. 84(11), 6268–6273 (1998).
[Crossref]

Ferguson, I. T.

J. C. Burton, L. Sun, F. H. Long, Z. C. Feng, and I. T. Ferguson, “First- and second-order Raman scattering from semi-insulating 4H−SiC,” Phys. Rev. B 59(11), 7282–7284 (1999).
[Crossref]

J. C. Burton, L. Sun, M. Pophristic, S. J. Lukacs, F. H. Long, Z. C. Feng, and I. T. Ferguson, “Spatial characterization of doped SiC wafers by Raman spectroscopy,” J. Appl. Phys. 84(11), 6268–6273 (1998).
[Crossref]

Ferrari, A. C.

A. C. Ferrari and J. Robertson, “Interpretation of Raman spectra of disordered and amorphous carbon,” Phys. Rev. B 61(20), 14095–14107 (2000).
[Crossref]

Fukumitsu, K.

E. Ohmura, F. Fukuyo, K. Fukumitsu, and H. Morita, “Internal modified-layer formation mechanism into silicon with nanosecond laser,” JAMME 17(1), 381–384 (2006).

Fukutani, A.

J. Ikeno, Y. Tani, A. Fukutani, and H. Sato, “Development of chipping-free dicing technology applying electrophoretic deposition of ultrafine abrasives,” Ann. CIRP 40(1), 351–354 (1991).
[Crossref]

Fukuyo, F.

E. Ohmura, F. Fukuyo, K. Fukumitsu, and H. Morita, “Internal modified-layer formation mechanism into silicon with nanosecond laser,” JAMME 17(1), 381–384 (2006).

Gudelis, V.

P. Ščajev, V. Gudelis, K. Jarašiūnas, and P. B. Klein, “Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature,” J. Appl. Phys. 108(2), 023705 (2010).
[Crossref]

Hall, R. N.

R. N. Hall, “Electron-hole recombination in germanium,” Phys. Rev. 87(2), 387 (1952).
[Crossref]

Harima, H.

T. Tomita, S. Saito, T. Suemoto, H. Harima, and S. Nakashima, “Structure dependent ultrafast relaxation time of photo-excited carriers in SiC,” J. Phys. Soc. Jpn. 73(9), 2554–2561 (2004).
[Crossref]

S. Nakashima, Y. Nakatake, H. Harima, M. Katsuo, and N. Ohtani, “Detection of stacking faults in 6H-SiC by Raman scattering,” Appl. Phys. Lett. 77(22), 3612–3614 (2000).
[Crossref]

Hashimoto, S.

T. Okada, T. Tomita, S. Matsuo, S. Hashimoto, Y. Ishida, S. Kiyama, and T. Takahashi, “Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation,” J. Appl. Phys. 106(5), 054307 (2009).
[Crossref]

Hirao, K.

Homma, H.

Howe, R. T.

J. H. Lee, I. Bargatin, J. Park, K. M. Milaninia, L. S. Theogarajan, R. Sinclair, and R. T. Howe, “Smart-cut layer transfer of single-crystal SiC using spin-on-glass,” J. Vac. Sci. Technol. B 30(4), 042001 (2012).
[Crossref]

Iida, M.

Ikeno, J.

J. Ikeno, Y. Tani, A. Fukutani, and H. Sato, “Development of chipping-free dicing technology applying electrophoretic deposition of ultrafine abrasives,” Ann. CIRP 40(1), 351–354 (1991).
[Crossref]

Ishida, Y.

T. Okada, T. Tomita, S. Matsuo, S. Hashimoto, Y. Ishida, S. Kiyama, and T. Takahashi, “Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation,” J. Appl. Phys. 106(5), 054307 (2009).
[Crossref]

Jarašiunas, K.

P. Ščajev, V. Gudelis, K. Jarašiūnas, and P. B. Klein, “Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature,” J. Appl. Phys. 108(2), 023705 (2010).
[Crossref]

Jaussaud, C.

L. Di Cioccio, F. Letertre, Y. Le Tiec, A. M. Papon, C. Jaussaud, and M. Bruel, “Silicon carbide on insulator formation by the Smart-Cut®process,” Mater. Sci. Eng. B 46(1), 349–356 (1997).
[Crossref]

Jeong, H. D.

I. H. Cho, S. C. Jeong, J. M. Park, and H. D. Jeong, “The application of micro-groove machining for the model of PDP barrier ribs,” J. Mater. Process. Technol. 113(1), 355–359 (2001).
[Crossref]

Jeong, S. C.

I. H. Cho, S. C. Jeong, J. M. Park, and H. D. Jeong, “The application of micro-groove machining for the model of PDP barrier ribs,” J. Mater. Process. Technol. 113(1), 355–359 (2001).
[Crossref]

Kato, T.

S. Nakashima, T. Mitani, M. Tomobe, T. Kato, and H. Okumura, “Raman characterization of damaged layers of 4H-SiC induced by scratching,” AIP Adv. 6(1), 015207 (2016).
[Crossref]

Katsuno, M.

S. Nakashima, T. Kitamura, T. Mitani, H. Okumura, M. Katsuno, and N. Ohtani, “Raman scattering study of carrier-transport and phonon properties of 4H−SiC crystals with graded doping,” Phys. Rev. B 76(24), 245208 (2007).
[Crossref]

Katsuo, M.

S. Nakashima, Y. Nakatake, H. Harima, M. Katsuo, and N. Ohtani, “Detection of stacking faults in 6H-SiC by Raman scattering,” Appl. Phys. Lett. 77(22), 3612–3614 (2000).
[Crossref]

Kazansky, P. G.

Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-organized nanogratings in glass irradiated by ultrashort light pulses,” Phys. Rev. Lett. 91(24), 247405 (2003).
[Crossref] [PubMed]

Kim, E.

E. Kim, Y. Shimotsuma, M. Sakakura, and K. Miura, “Ultrashort pulse laser slicing of semiconductor crystal,” Proc. SPIE 9983, 99831B (2016).
[Crossref]

Kitamura, T.

S. Nakashima, T. Kitamura, T. Mitani, H. Okumura, M. Katsuno, and N. Ohtani, “Raman scattering study of carrier-transport and phonon properties of 4H−SiC crystals with graded doping,” Phys. Rev. B 76(24), 245208 (2007).
[Crossref]

Kiyama, S.

T. Okada, T. Tomita, S. Matsuo, S. Hashimoto, Y. Ishida, S. Kiyama, and T. Takahashi, “Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation,” J. Appl. Phys. 106(5), 054307 (2009).
[Crossref]

Klein, P. B.

P. Ščajev, V. Gudelis, K. Jarašiūnas, and P. B. Klein, “Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature,” J. Appl. Phys. 108(2), 023705 (2010).
[Crossref]

Le Tiec, Y.

L. Di Cioccio, F. Letertre, Y. Le Tiec, A. M. Papon, C. Jaussaud, and M. Bruel, “Silicon carbide on insulator formation by the Smart-Cut®process,” Mater. Sci. Eng. B 46(1), 349–356 (1997).
[Crossref]

Lee, J. H.

J. H. Lee, I. Bargatin, J. Park, K. M. Milaninia, L. S. Theogarajan, R. Sinclair, and R. T. Howe, “Smart-cut layer transfer of single-crystal SiC using spin-on-glass,” J. Vac. Sci. Technol. B 30(4), 042001 (2012).
[Crossref]

Lee, S. B.

S. B. Lee, Y. Tani, T. Enomoto, and H. Sato, “Development of a dicing blade with photopolymerizable resins for improving machinability,” Ann. CIRP 54(1), 293–296 (2005).
[Crossref]

Letertre, F.

L. Di Cioccio, F. Letertre, Y. Le Tiec, A. M. Papon, C. Jaussaud, and M. Bruel, “Silicon carbide on insulator formation by the Smart-Cut®process,” Mater. Sci. Eng. B 46(1), 349–356 (1997).
[Crossref]

Liu, J.

J. Liu and Y. K. Vohra, “Raman modes of 6H polytype of silicon carbide to ultrahigh pressures: A comparison with silicon and diamond,” Phys. Rev. Lett. 72(26), 4105–4108 (1994).
[Crossref] [PubMed]

Long, F. H.

J. C. Burton, L. Sun, F. H. Long, Z. C. Feng, and I. T. Ferguson, “First- and second-order Raman scattering from semi-insulating 4H−SiC,” Phys. Rev. B 59(11), 7282–7284 (1999).
[Crossref]

J. C. Burton, L. Sun, M. Pophristic, S. J. Lukacs, F. H. Long, Z. C. Feng, and I. T. Ferguson, “Spatial characterization of doped SiC wafers by Raman spectroscopy,” J. Appl. Phys. 84(11), 6268–6273 (1998).
[Crossref]

Lukacs, S. J.

J. C. Burton, L. Sun, M. Pophristic, S. J. Lukacs, F. H. Long, Z. C. Feng, and I. T. Ferguson, “Spatial characterization of doped SiC wafers by Raman spectroscopy,” J. Appl. Phys. 84(11), 6268–6273 (1998).
[Crossref]

Malka, V.

J. Faure, V. Malka, J. R. Marqués, P. G. David, F. Amiranoff, K. Ta Phuoc, and A. Rousse, “Effects of pulse duration on self-focusing of ultra-short lasers in underdense plasmas,” Phys. Plasmas 9(3), 756–759 (2002).
[Crossref]

Marburger, J. H.

J. H. Marburger, “Self-focusing: Theory,” Prog. Quantum Electron. 4(1), 35–110 (1975).
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Marqués, J. R.

J. Faure, V. Malka, J. R. Marqués, P. G. David, F. Amiranoff, K. Ta Phuoc, and A. Rousse, “Effects of pulse duration on self-focusing of ultra-short lasers in underdense plasmas,” Phys. Plasmas 9(3), 756–759 (2002).
[Crossref]

Matsuo, S.

T. Okada, T. Tomita, S. Matsuo, S. Hashimoto, Y. Ishida, S. Kiyama, and T. Takahashi, “Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation,” J. Appl. Phys. 106(5), 054307 (2009).
[Crossref]

Micorikawa, K.

Milaninia, K. M.

J. H. Lee, I. Bargatin, J. Park, K. M. Milaninia, L. S. Theogarajan, R. Sinclair, and R. T. Howe, “Smart-cut layer transfer of single-crystal SiC using spin-on-glass,” J. Vac. Sci. Technol. B 30(4), 042001 (2012).
[Crossref]

Minowa, Y.

Mitani, T.

S. Nakashima, T. Mitani, M. Tomobe, T. Kato, and H. Okumura, “Raman characterization of damaged layers of 4H-SiC induced by scratching,” AIP Adv. 6(1), 015207 (2016).
[Crossref]

S. Nakashima, T. Kitamura, T. Mitani, H. Okumura, M. Katsuno, and N. Ohtani, “Raman scattering study of carrier-transport and phonon properties of 4H−SiC crystals with graded doping,” Phys. Rev. B 76(24), 245208 (2007).
[Crossref]

Miura, K.

E. Kim, Y. Shimotsuma, M. Sakakura, and K. Miura, “Ultrashort pulse laser slicing of semiconductor crystal,” Proc. SPIE 9983, 99831B (2016).
[Crossref]

M. Mori, Y. Shimotsuma, T. Sei, M. Sakakura, K. Miura, and H. Udono, “Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing,” Phys. Status Solidi., A Appl. Mater. Sci. 212(4), 715–721 (2015).
[Crossref]

M. Shimizu, Y. Shimotsuma, M. Sakakura, T. Yuasa, H. Homma, Y. Minowa, K. Tanaka, K. Miura, and K. Hirao, “Periodic metallo-dielectric structure in diamond,” Opt. Express 17(1), 46–54 (2009).
[Crossref] [PubMed]

K. M. Davis, K. Miura, N. Sugimoto, and K. Hirao, “Writing waveguides in glass with a femtosecond laser,” Opt. Lett. 21(21), 1729–1731 (1996).
[Crossref] [PubMed]

Mori, M.

M. Mori, Y. Shimotsuma, T. Sei, M. Sakakura, K. Miura, and H. Udono, “Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing,” Phys. Status Solidi., A Appl. Mater. Sci. 212(4), 715–721 (2015).
[Crossref]

Morita, H.

E. Ohmura, F. Fukuyo, K. Fukumitsu, and H. Morita, “Internal modified-layer formation mechanism into silicon with nanosecond laser,” JAMME 17(1), 381–384 (2006).

Nakashima, S.

S. Nakashima, T. Mitani, M. Tomobe, T. Kato, and H. Okumura, “Raman characterization of damaged layers of 4H-SiC induced by scratching,” AIP Adv. 6(1), 015207 (2016).
[Crossref]

S. Nakashima, T. Kitamura, T. Mitani, H. Okumura, M. Katsuno, and N. Ohtani, “Raman scattering study of carrier-transport and phonon properties of 4H−SiC crystals with graded doping,” Phys. Rev. B 76(24), 245208 (2007).
[Crossref]

T. Tomita, S. Saito, T. Suemoto, H. Harima, and S. Nakashima, “Structure dependent ultrafast relaxation time of photo-excited carriers in SiC,” J. Phys. Soc. Jpn. 73(9), 2554–2561 (2004).
[Crossref]

S. Nakashima, Y. Nakatake, H. Harima, M. Katsuo, and N. Ohtani, “Detection of stacking faults in 6H-SiC by Raman scattering,” Appl. Phys. Lett. 77(22), 3612–3614 (2000).
[Crossref]

Nakatake, Y.

S. Nakashima, Y. Nakatake, H. Harima, M. Katsuo, and N. Ohtani, “Detection of stacking faults in 6H-SiC by Raman scattering,” Appl. Phys. Lett. 77(22), 3612–3614 (2000).
[Crossref]

Ohmura, E.

E. Ohmura, F. Fukuyo, K. Fukumitsu, and H. Morita, “Internal modified-layer formation mechanism into silicon with nanosecond laser,” JAMME 17(1), 381–384 (2006).

Ohtani, N.

S. Nakashima, T. Kitamura, T. Mitani, H. Okumura, M. Katsuno, and N. Ohtani, “Raman scattering study of carrier-transport and phonon properties of 4H−SiC crystals with graded doping,” Phys. Rev. B 76(24), 245208 (2007).
[Crossref]

S. Nakashima, Y. Nakatake, H. Harima, M. Katsuo, and N. Ohtani, “Detection of stacking faults in 6H-SiC by Raman scattering,” Appl. Phys. Lett. 77(22), 3612–3614 (2000).
[Crossref]

Okada, T.

T. Okada, T. Tomita, S. Matsuo, S. Hashimoto, Y. Ishida, S. Kiyama, and T. Takahashi, “Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation,” J. Appl. Phys. 106(5), 054307 (2009).
[Crossref]

Okumura, H.

S. Nakashima, T. Mitani, M. Tomobe, T. Kato, and H. Okumura, “Raman characterization of damaged layers of 4H-SiC induced by scratching,” AIP Adv. 6(1), 015207 (2016).
[Crossref]

S. Nakashima, T. Kitamura, T. Mitani, H. Okumura, M. Katsuno, and N. Ohtani, “Raman scattering study of carrier-transport and phonon properties of 4H−SiC crystals with graded doping,” Phys. Rev. B 76(24), 245208 (2007).
[Crossref]

Papon, A. M.

L. Di Cioccio, F. Letertre, Y. Le Tiec, A. M. Papon, C. Jaussaud, and M. Bruel, “Silicon carbide on insulator formation by the Smart-Cut®process,” Mater. Sci. Eng. B 46(1), 349–356 (1997).
[Crossref]

Park, J.

J. H. Lee, I. Bargatin, J. Park, K. M. Milaninia, L. S. Theogarajan, R. Sinclair, and R. T. Howe, “Smart-cut layer transfer of single-crystal SiC using spin-on-glass,” J. Vac. Sci. Technol. B 30(4), 042001 (2012).
[Crossref]

Park, J. M.

I. H. Cho, S. C. Jeong, J. M. Park, and H. D. Jeong, “The application of micro-groove machining for the model of PDP barrier ribs,” J. Mater. Process. Technol. 113(1), 355–359 (2001).
[Crossref]

Parker, J. H.

D. W. Feldman, J. H. Parker, W. J. Choyke, and L. Patrick, “Phonon dispersion curves by Raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R,” Phys. Rev. 173(3), 787–793 (1968).
[Crossref]

Passaro, V. M. N.

F. De Leonardis, R. A. Soref, and V. M. N. Passaro, “Dispersion of nonresonant third-order nonlinearities in Silicon Carbide,” Sci. Rep. 7, 40924 (2017).
[Crossref] [PubMed]

Patrick, L.

D. W. Feldman, J. H. Parker, W. J. Choyke, and L. Patrick, “Phonon dispersion curves by Raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R,” Phys. Rev. 173(3), 787–793 (1968).
[Crossref]

Peng, W.

W. Peng, X. F. Xu, and L. F. Zhang, “Improvement of a dicing blade using a whisker direction-controlled by an electric field,” J. Mater. Process. Technol. 129(1), 377–379 (2002).
[Crossref]

Pophristic, M.

J. C. Burton, L. Sun, M. Pophristic, S. J. Lukacs, F. H. Long, Z. C. Feng, and I. T. Ferguson, “Spatial characterization of doped SiC wafers by Raman spectroscopy,” J. Appl. Phys. 84(11), 6268–6273 (1998).
[Crossref]

Qiu, J.

Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-organized nanogratings in glass irradiated by ultrashort light pulses,” Phys. Rev. Lett. 91(24), 247405 (2003).
[Crossref] [PubMed]

Read, W. T.

W. Shockley and W. T. Read., “Statistics of the recombinations of holes and electrons,” Phys. Rev. 87(5), 835–842 (1952).
[Crossref]

Robertson, J.

A. C. Ferrari and J. Robertson, “Interpretation of Raman spectra of disordered and amorphous carbon,” Phys. Rev. B 61(20), 14095–14107 (2000).
[Crossref]

Rousse, A.

J. Faure, V. Malka, J. R. Marqués, P. G. David, F. Amiranoff, K. Ta Phuoc, and A. Rousse, “Effects of pulse duration on self-focusing of ultra-short lasers in underdense plasmas,” Phys. Plasmas 9(3), 756–759 (2002).
[Crossref]

Saito, S.

T. Tomita, S. Saito, T. Suemoto, H. Harima, and S. Nakashima, “Structure dependent ultrafast relaxation time of photo-excited carriers in SiC,” J. Phys. Soc. Jpn. 73(9), 2554–2561 (2004).
[Crossref]

Sakakura, M.

E. Kim, Y. Shimotsuma, M. Sakakura, and K. Miura, “Ultrashort pulse laser slicing of semiconductor crystal,” Proc. SPIE 9983, 99831B (2016).
[Crossref]

M. Mori, Y. Shimotsuma, T. Sei, M. Sakakura, K. Miura, and H. Udono, “Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing,” Phys. Status Solidi., A Appl. Mater. Sci. 212(4), 715–721 (2015).
[Crossref]

M. Shimizu, Y. Shimotsuma, M. Sakakura, T. Yuasa, H. Homma, Y. Minowa, K. Tanaka, K. Miura, and K. Hirao, “Periodic metallo-dielectric structure in diamond,” Opt. Express 17(1), 46–54 (2009).
[Crossref] [PubMed]

Sato, H.

S. B. Lee, Y. Tani, T. Enomoto, and H. Sato, “Development of a dicing blade with photopolymerizable resins for improving machinability,” Ann. CIRP 54(1), 293–296 (2005).
[Crossref]

J. Ikeno, Y. Tani, A. Fukutani, and H. Sato, “Development of chipping-free dicing technology applying electrophoretic deposition of ultrafine abrasives,” Ann. CIRP 40(1), 351–354 (1991).
[Crossref]

Šcajev, P.

P. Ščajev, V. Gudelis, K. Jarašiūnas, and P. B. Klein, “Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature,” J. Appl. Phys. 108(2), 023705 (2010).
[Crossref]

Schwan, J.

J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt, and S. R. P. Silva, “Raman spectroscopy on amorphous carbon films,” J. Appl. Phys. 80(1), 440–447 (1996).
[Crossref]

Sei, T.

M. Mori, Y. Shimotsuma, T. Sei, M. Sakakura, K. Miura, and H. Udono, “Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing,” Phys. Status Solidi., A Appl. Mater. Sci. 212(4), 715–721 (2015).
[Crossref]

Shimizu, M.

Shimotsuma, Y.

E. Kim, Y. Shimotsuma, M. Sakakura, and K. Miura, “Ultrashort pulse laser slicing of semiconductor crystal,” Proc. SPIE 9983, 99831B (2016).
[Crossref]

M. Mori, Y. Shimotsuma, T. Sei, M. Sakakura, K. Miura, and H. Udono, “Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing,” Phys. Status Solidi., A Appl. Mater. Sci. 212(4), 715–721 (2015).
[Crossref]

M. Shimizu, Y. Shimotsuma, M. Sakakura, T. Yuasa, H. Homma, Y. Minowa, K. Tanaka, K. Miura, and K. Hirao, “Periodic metallo-dielectric structure in diamond,” Opt. Express 17(1), 46–54 (2009).
[Crossref] [PubMed]

Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-organized nanogratings in glass irradiated by ultrashort light pulses,” Phys. Rev. Lett. 91(24), 247405 (2003).
[Crossref] [PubMed]

Shockley, W.

W. Shockley and W. T. Read., “Statistics of the recombinations of holes and electrons,” Phys. Rev. 87(5), 835–842 (1952).
[Crossref]

Silva, S. R. P.

J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt, and S. R. P. Silva, “Raman spectroscopy on amorphous carbon films,” J. Appl. Phys. 80(1), 440–447 (1996).
[Crossref]

Sinclair, R.

J. H. Lee, I. Bargatin, J. Park, K. M. Milaninia, L. S. Theogarajan, R. Sinclair, and R. T. Howe, “Smart-cut layer transfer of single-crystal SiC using spin-on-glass,” J. Vac. Sci. Technol. B 30(4), 042001 (2012).
[Crossref]

Soref, R. A.

F. De Leonardis, R. A. Soref, and V. M. N. Passaro, “Dispersion of nonresonant third-order nonlinearities in Silicon Carbide,” Sci. Rep. 7, 40924 (2017).
[Crossref] [PubMed]

Suemoto, T.

T. Tomita, S. Saito, T. Suemoto, H. Harima, and S. Nakashima, “Structure dependent ultrafast relaxation time of photo-excited carriers in SiC,” J. Phys. Soc. Jpn. 73(9), 2554–2561 (2004).
[Crossref]

Sugimoto, N.

Sugioka, K.

Sun, L.

J. C. Burton, L. Sun, F. H. Long, Z. C. Feng, and I. T. Ferguson, “First- and second-order Raman scattering from semi-insulating 4H−SiC,” Phys. Rev. B 59(11), 7282–7284 (1999).
[Crossref]

J. C. Burton, L. Sun, M. Pophristic, S. J. Lukacs, F. H. Long, Z. C. Feng, and I. T. Ferguson, “Spatial characterization of doped SiC wafers by Raman spectroscopy,” J. Appl. Phys. 84(11), 6268–6273 (1998).
[Crossref]

Ta Phuoc, K.

J. Faure, V. Malka, J. R. Marqués, P. G. David, F. Amiranoff, K. Ta Phuoc, and A. Rousse, “Effects of pulse duration on self-focusing of ultra-short lasers in underdense plasmas,” Phys. Plasmas 9(3), 756–759 (2002).
[Crossref]

Takahashi, T.

T. Okada, T. Tomita, S. Matsuo, S. Hashimoto, Y. Ishida, S. Kiyama, and T. Takahashi, “Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation,” J. Appl. Phys. 106(5), 054307 (2009).
[Crossref]

Takai, H.

Tanaka, K.

Tani, Y.

S. B. Lee, Y. Tani, T. Enomoto, and H. Sato, “Development of a dicing blade with photopolymerizable resins for improving machinability,” Ann. CIRP 54(1), 293–296 (2005).
[Crossref]

J. Ikeno, Y. Tani, A. Fukutani, and H. Sato, “Development of chipping-free dicing technology applying electrophoretic deposition of ultrafine abrasives,” Ann. CIRP 40(1), 351–354 (1991).
[Crossref]

Theogarajan, L. S.

J. H. Lee, I. Bargatin, J. Park, K. M. Milaninia, L. S. Theogarajan, R. Sinclair, and R. T. Howe, “Smart-cut layer transfer of single-crystal SiC using spin-on-glass,” J. Vac. Sci. Technol. B 30(4), 042001 (2012).
[Crossref]

Tomita, T.

T. Okada, T. Tomita, S. Matsuo, S. Hashimoto, Y. Ishida, S. Kiyama, and T. Takahashi, “Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation,” J. Appl. Phys. 106(5), 054307 (2009).
[Crossref]

T. Tomita, S. Saito, T. Suemoto, H. Harima, and S. Nakashima, “Structure dependent ultrafast relaxation time of photo-excited carriers in SiC,” J. Phys. Soc. Jpn. 73(9), 2554–2561 (2004).
[Crossref]

Tomobe, M.

S. Nakashima, T. Mitani, M. Tomobe, T. Kato, and H. Okumura, “Raman characterization of damaged layers of 4H-SiC induced by scratching,” AIP Adv. 6(1), 015207 (2016).
[Crossref]

Udono, H.

M. Mori, Y. Shimotsuma, T. Sei, M. Sakakura, K. Miura, and H. Udono, “Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing,” Phys. Status Solidi., A Appl. Mater. Sci. 212(4), 715–721 (2015).
[Crossref]

Ulrich, S.

J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt, and S. R. P. Silva, “Raman spectroscopy on amorphous carbon films,” J. Appl. Phys. 80(1), 440–447 (1996).
[Crossref]

Vohra, Y. K.

J. Liu and Y. K. Vohra, “Raman modes of 6H polytype of silicon carbide to ultrahigh pressures: A comparison with silicon and diamond,” Phys. Rev. Lett. 72(26), 4105–4108 (1994).
[Crossref] [PubMed]

Wielunski, L.

V. P. Amarasinghe, L. Wielunski, A. Barcz, L. C. Feldman, and G. K. Celler, “Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films,” ECS J. Solid State Sci. Technol. 3(3), 37–42 (2014).
[Crossref]

Xu, X. F.

W. Peng, X. F. Xu, and L. F. Zhang, “Improvement of a dicing blade using a whisker direction-controlled by an electric field,” J. Mater. Process. Technol. 129(1), 377–379 (2002).
[Crossref]

Yuasa, T.

Zhang, L. F.

W. Peng, X. F. Xu, and L. F. Zhang, “Improvement of a dicing blade using a whisker direction-controlled by an electric field,” J. Mater. Process. Technol. 129(1), 377–379 (2002).
[Crossref]

AIP Adv. (1)

S. Nakashima, T. Mitani, M. Tomobe, T. Kato, and H. Okumura, “Raman characterization of damaged layers of 4H-SiC induced by scratching,” AIP Adv. 6(1), 015207 (2016).
[Crossref]

Ann. CIRP (2)

J. Ikeno, Y. Tani, A. Fukutani, and H. Sato, “Development of chipping-free dicing technology applying electrophoretic deposition of ultrafine abrasives,” Ann. CIRP 40(1), 351–354 (1991).
[Crossref]

S. B. Lee, Y. Tani, T. Enomoto, and H. Sato, “Development of a dicing blade with photopolymerizable resins for improving machinability,” Ann. CIRP 54(1), 293–296 (2005).
[Crossref]

Appl. Phys. Lett. (1)

S. Nakashima, Y. Nakatake, H. Harima, M. Katsuo, and N. Ohtani, “Detection of stacking faults in 6H-SiC by Raman scattering,” Appl. Phys. Lett. 77(22), 3612–3614 (2000).
[Crossref]

ECS J. Solid State Sci. Technol. (1)

V. P. Amarasinghe, L. Wielunski, A. Barcz, L. C. Feldman, and G. K. Celler, “Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films,” ECS J. Solid State Sci. Technol. 3(3), 37–42 (2014).
[Crossref]

J. Appl. Phys. (4)

T. Okada, T. Tomita, S. Matsuo, S. Hashimoto, Y. Ishida, S. Kiyama, and T. Takahashi, “Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation,” J. Appl. Phys. 106(5), 054307 (2009).
[Crossref]

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Figures (8)

Fig. 1
Fig. 1 (a) Schematic of the experimental procedure. (b) Optical microscope image of the laser writing region (yellow dotted area) viewed from the top surface. Optical microscope images of the exfoliated (c) upper and (d) lower surfaces viewed from the cross-sectional direction. The blue arrows show the exfoliated surfaces. The red Symbol of kw shows the laser propagation direction.
Fig. 2
Fig. 2 (a) Cross-sectional observations of the black-colored structural modifications inside 4H-SiC induced by the ultrashort pulse laser with the different pulse durations. Symbols of kw, and E show the laser propagation direction and polarization direction, respectively. (b) The size of the photoinduced structures in 4H-SiC as a function of the pulse duration. The Ep was fixed to be 10 μJ.
Fig. 3
Fig. 3 The size of widths, heights and the laser-induced damage probabilities of the photoinduced structures inside 4H-SiC as a function of the total pulse energy. The τdelay between femtosecond double pulse (τp = 220 fs) was 2 ps.
Fig. 4
Fig. 4 (a) Cross-sectional observations of the black-colored structural modifications inside 4H-SiC induced by the femtosecond double-pulses (τp = 220 fs). Yellow arrows point cracks. (b) The size of the photoinduced structures inside 4H-SiC as a function of the τdelay of double-pulse trains with the total pulse energy of 20 μJ.
Fig. 5
Fig. 5 (a) Typical micro-Raman spectra before and after laser irradiation. Raman maps of the FTO peak on the cross-sectional surface including the laser-written tracks by the single- (upper row) and the double- (lower row) pulse trains. (b, e) intensity, (c, f) FWHM, and (d, g) peak position. The laser writing conditions by the single-pulse trains (b-d): Ep = 10 μJ, τp = 1 ps. The laser writing conditions by the double-pulse trains: Ep = 10 + 10 μJ, τp = 220 fs, τdelay = 2 ps.
Fig. 6
Fig. 6 HR-TEM images of the laser-written tracks induced by the single- (a) and the double- (b) pulse trains. FFT images at the regions of A (c), B (d), C (e), and D (f) are also shown. The laser writing conditions by the single-pulse trains: Ep = 10 μJ, τp = 1 ps. The laser writing conditions by the double-pulse trains: Ep = 5 + 5 μJ, τp = 220 fs, τdelay = 2 ps.
Fig. 7
Fig. 7 (a) Plots of tensile stress as a function of strain. (b) A photograph of the exfoliated sample surfaces after laser slicing by double-pulse. (c) Optical microscope image of the exfoliated surface after the laser writing by double pulse configuration. The laser writing conditions by the single-pulse trains: Ep = 10 μJ, τp = 1 ps. The laser writing conditions by the double-pulse trains: Ep = 5 + 5 μJ, τp = 220 fs, and τdelay = 1 ps.
Fig. 8
Fig. 8 (a) The surface profiles on the exfoliated surfaces after the laser writing with the single- and double-pulse trains. Optical microscope images of the exfoliated surfaces viewed from the cross-sectional direction after the laser writing by (b) single- and (c) double-pulse trains are shown. The blue arrows show the exfoliated surfaces. The blue Symbol of kw shows the laser propagation direction. Optical microscope images of the exfoliated surfaces for (d) single- and (e) double-pulse trains are also shown. The laser writing conditions by the single-pulse trains: Ep = 10 μJ, τp = 1 ps. The laser writing conditions by the double-pulse trains: Ep = 5 + 5 μJ, τp = 220 fs, and τdelay = 1 ps.

Equations (2)

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P cr = 3.77 λ 2 8π n 0 n 2
n [cm -3 ]=1.25× 10 17 Δω

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