Abstract

The crystal quality of a 4H-silicon carbide (4H-SiC) epitaxial layer is crucial to the development of high-performance 4H-SiC-based electronic power devices. However, the quality assessment of 4H-SiC homoepitaxial thin film is problematic because the same bulk material interferes with the probe of the epilayer. In this paper, we propose a simple and straightforward strategy to assess the quality of a homoepilayer using ultraviolet (UV) Raman spectroscopy (RS). Rather than focusing on the normally allowed modes, we shift our attention to the forbidden modes instead. We demonstrate that forbidden modes, which were usually ignored, are more sensitive to the crystalline imperfection and can be an effective quality probe. Our approach analyzes the crystal quality swiftly, without the need for the data fitting involved in the conventional method, and therefore makes the quality assessment much more efficient. The new method may also be applied to the other thin film materials.

© 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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    [Crossref]
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    [Crossref]
  27. Z. C. Feng, “Micro-Raman scattering and micro-photoluminescence of GaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Opt. Eng. 41(8), 2022–2031 (2002).
    [Crossref]
  28. M. Havel, D. Baron, and P. Colomban, “‘Smart’ Raman/Rayleigh imaging of nanosized SiC materials using the spatial correlation model,” J. Mater. Sci. 39(20), 6183–6190 (2004).
    [Crossref]

2017 (3)

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

C. Wells, J.-Y. Jiang, T.-F. Chang, C.-F. Huang, J. Ke, W. Luo, G. Xia, K. Y. Cheong, and F. Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Mater. Lett. 191, 196–199 (2017).
[Crossref]

S. Chen, L. Wan, D. Xie, Z. R. Qiu, X. Jiang, C.-C. Tin, and Z. C. Feng, “Adducing crystalline features from Raman scattering studies of cubic SiC using different excitation wavelengths,” J. Phys. D Appl. Phys. 50(11), 115102 (2017).
[Crossref]

2016 (3)

J. Hu, R. Jia, B. Xin, B. Peng, Y. Wang, and Y. Zhang, “Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers,” Materials (Basel) 9(9), 743 (2016).
[Crossref] [PubMed]

T. Kimoto, “Bulk and epitaxial growth of silicon carbide,” Prog. Cryst. Growth Charact. Mater. 62(2), 329–351 (2016).
[Crossref]

Y. Peng, X. Hu, X. Xu, X. Chen, J. Peng, J. Han, and A. S. Dimitrijev, “Temperature and doping dependence of the Raman scattering in 4H-SiC,” Opt. Mater. Express 6(9), 2725 (2016).
[Crossref]

2015 (2)

G. Lioliou, M. C. Mazzillo, A. Sciuto, and A. M. Barnett, “Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes,” Opt. Express 23(17), 21657–21670 (2015).
[Crossref] [PubMed]

R. J. Kuhudzai, J. B. Malherbe, N. G. van der Berg, T. T. Hlatshwayo, O. Odutemowo, L. C. Prinshloo, A. V. Buys, R. Erasmus, and E. Wendler, “Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region,” Nucl. Instrum. Meth. B 365(3), 342–346 (2015).
[Crossref]

2011 (1)

2009 (1)

C. R. Eddy and D. K. Gaskill, “Materials science. Silicon carbide as a platform for power electronics,” Science 324(5933), 1398–1400 (2009).
[Crossref] [PubMed]

2008 (1)

S. Nakashima, T. Kitamura, T. Kato, K. Kojima, R. Kosugi, H. Okumura, H. Tsuchida, and M. Ito, “Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering,” Appl. Phys. Lett. 93(12), 121913 (2008).
[Crossref]

2007 (1)

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, and H. Harima, “Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy,” Phys. Rev. B 75(11), 115321 (2007).
[Crossref]

2005 (2)

T. Tomita, S. Matsuo, T. Okada, T. Kimoto, H. Matsunami, T. Mitani, and S.-I. Nakashima, “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepipaxially grown film,” Appl. Phys. Lett. 87(24), 241906 (2005).
[Crossref]

S. Nakashima, T. Mitani, J. Senzaki, H. Okumura, and T. Yamamoto, “Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals,” J. Appl. Phys. 97(12), 123507 (2005).
[Crossref]

2004 (3)

M. Okamoto, R. Kosugi, S. Nakashima, K. Fukuda, and K. Arai, “Deep UV excitation Raman spectroscopy of homoepitaxial 4H-SiC films grown by microwave plasma chemical capor deposition,” Mater. Sci. Forum 457–460, 629–632 (2004).
[Crossref]

M. Havel, D. Baron, and P. Colomban, “‘Smart’ Raman/Rayleigh imaging of nanosized SiC materials using the spatial correlation model,” J. Mater. Sci. 39(20), 6183–6190 (2004).
[Crossref]

S. Nakashima, H. Okumura, T. Yamamoto, and R. Shimidzu, “Deep-Ultraviolet Raman Microspectroscopy: Characterization of Wide-Gap Semiconductors,” Appl. Spectrosc. 58(2), 224–229 (2004).
[Crossref] [PubMed]

2002 (1)

Z. C. Feng, “Micro-Raman scattering and micro-photoluminescence of GaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Opt. Eng. 41(8), 2022–2031 (2002).
[Crossref]

1999 (1)

S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, “Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 85(12), 8353–8361 (1999).
[Crossref]

1998 (1)

A. T. S. Wee, K. Li, and C. C. Tin, “Surface chemical states on LPCVD-grown 4H-SiC epilayers,” Appl. Surf. Sci. 126(1–2), 34–42 (1998).
[Crossref]

1996 (1)

C. C. Tin, R. Hu, J. Liu, Y. Vohra, and Z. C. Feng, “Raman microprobe assessment of low-pressure chemical vapor deposition-grown 4H-SiC epilayers,” J. Cryst. Growth 158(4), 509–513 (1996).
[Crossref]

1978 (1)

G. Abstreiter, E. Bauser, A. Fischer, and K. Ploog, “Raman Spectroscopy-A Versatile Tool for Characterization of Thin Films and Heterostructures of GaAs and AlxGa1-xAs,” Appl. Phys. (Berl.) 16(4), 345–352 (1978).
[Crossref]

1964 (1)

R. Loudon, “The Raman effect in crystals,” Adv. Phys. 52, 423–482 (1964).
[Crossref]

Abstreiter, G.

G. Abstreiter, E. Bauser, A. Fischer, and K. Ploog, “Raman Spectroscopy-A Versatile Tool for Characterization of Thin Films and Heterostructures of GaAs and AlxGa1-xAs,” Appl. Phys. (Berl.) 16(4), 345–352 (1978).
[Crossref]

Arai, K.

M. Okamoto, R. Kosugi, S. Nakashima, K. Fukuda, and K. Arai, “Deep UV excitation Raman spectroscopy of homoepitaxial 4H-SiC films grown by microwave plasma chemical capor deposition,” Mater. Sci. Forum 457–460, 629–632 (2004).
[Crossref]

Barnett, A. M.

Baron, D.

M. Havel, D. Baron, and P. Colomban, “‘Smart’ Raman/Rayleigh imaging of nanosized SiC materials using the spatial correlation model,” J. Mater. Sci. 39(20), 6183–6190 (2004).
[Crossref]

Bauser, E.

G. Abstreiter, E. Bauser, A. Fischer, and K. Ploog, “Raman Spectroscopy-A Versatile Tool for Characterization of Thin Films and Heterostructures of GaAs and AlxGa1-xAs,” Appl. Phys. (Berl.) 16(4), 345–352 (1978).
[Crossref]

Berg, R.

Bouhafs, C.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Buys, A. V.

R. J. Kuhudzai, J. B. Malherbe, N. G. van der Berg, T. T. Hlatshwayo, O. Odutemowo, L. C. Prinshloo, A. V. Buys, R. Erasmus, and E. Wendler, “Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region,” Nucl. Instrum. Meth. B 365(3), 342–346 (2015).
[Crossref]

Chang, T.-F.

C. Wells, J.-Y. Jiang, T.-F. Chang, C.-F. Huang, J. Ke, W. Luo, G. Xia, K. Y. Cheong, and F. Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Mater. Lett. 191, 196–199 (2017).
[Crossref]

Chen, J. G.

S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, “Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 85(12), 8353–8361 (1999).
[Crossref]

Chen, S.

S. Chen, L. Wan, D. Xie, Z. R. Qiu, X. Jiang, C.-C. Tin, and Z. C. Feng, “Adducing crystalline features from Raman scattering studies of cubic SiC using different excitation wavelengths,” J. Phys. D Appl. Phys. 50(11), 115102 (2017).
[Crossref]

Chen, X.

Cheong, K. Y.

C. Wells, J.-Y. Jiang, T.-F. Chang, C.-F. Huang, J. Ke, W. Luo, G. Xia, K. Y. Cheong, and F. Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Mater. Lett. 191, 196–199 (2017).
[Crossref]

Colomban, P.

M. Havel, D. Baron, and P. Colomban, “‘Smart’ Raman/Rayleigh imaging of nanosized SiC materials using the spatial correlation model,” J. Mater. Sci. 39(20), 6183–6190 (2004).
[Crossref]

Darakchiev, V.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Dimitrijev, A. S.

Duda, E.

S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, “Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 85(12), 8353–8361 (1999).
[Crossref]

Eddy, C. R.

C. R. Eddy and D. K. Gaskill, “Materials science. Silicon carbide as a platform for power electronics,” Science 324(5933), 1398–1400 (2009).
[Crossref] [PubMed]

Erasmus, R.

R. J. Kuhudzai, J. B. Malherbe, N. G. van der Berg, T. T. Hlatshwayo, O. Odutemowo, L. C. Prinshloo, A. V. Buys, R. Erasmus, and E. Wendler, “Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region,” Nucl. Instrum. Meth. B 365(3), 342–346 (2015).
[Crossref]

Eriksson, J.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Feng, Z. C.

S. Chen, L. Wan, D. Xie, Z. R. Qiu, X. Jiang, C.-C. Tin, and Z. C. Feng, “Adducing crystalline features from Raman scattering studies of cubic SiC using different excitation wavelengths,” J. Phys. D Appl. Phys. 50(11), 115102 (2017).
[Crossref]

Z. C. Feng, “Micro-Raman scattering and micro-photoluminescence of GaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Opt. Eng. 41(8), 2022–2031 (2002).
[Crossref]

C. C. Tin, R. Hu, J. Liu, Y. Vohra, and Z. C. Feng, “Raman microprobe assessment of low-pressure chemical vapor deposition-grown 4H-SiC epilayers,” J. Cryst. Growth 158(4), 509–513 (1996).
[Crossref]

Fischer, A.

G. Abstreiter, E. Bauser, A. Fischer, and K. Ploog, “Raman Spectroscopy-A Versatile Tool for Characterization of Thin Films and Heterostructures of GaAs and AlxGa1-xAs,” Appl. Phys. (Berl.) 16(4), 345–352 (1978).
[Crossref]

Fukuda, K.

M. Okamoto, R. Kosugi, S. Nakashima, K. Fukuda, and K. Arai, “Deep UV excitation Raman spectroscopy of homoepitaxial 4H-SiC films grown by microwave plasma chemical capor deposition,” Mater. Sci. Forum 457–460, 629–632 (2004).
[Crossref]

Furuta, K.

T. Kitamura, S. Nakashima, T. Mitani, N. Nakamura, K. Furuta, and H. Okumura, “Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy,” Phys. Status Solidi4(7), 2375–2378 (2007) (c).
[Crossref]

Gaskill, D. K.

C. R. Eddy and D. K. Gaskill, “Materials science. Silicon carbide as a platform for power electronics,” Science 324(5933), 1398–1400 (2009).
[Crossref] [PubMed]

Giannazzo, F.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Han, J.

Harima, H.

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, and H. Harima, “Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy,” Phys. Rev. B 75(11), 115321 (2007).
[Crossref]

Havel, M.

M. Havel, D. Baron, and P. Colomban, “‘Smart’ Raman/Rayleigh imaging of nanosized SiC materials using the spatial correlation model,” J. Mater. Sci. 39(20), 6183–6190 (2004).
[Crossref]

Hilfiker, J. N.

S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, “Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 85(12), 8353–8361 (1999).
[Crossref]

Hlatshwayo, T. T.

R. J. Kuhudzai, J. B. Malherbe, N. G. van der Berg, T. T. Hlatshwayo, O. Odutemowo, L. C. Prinshloo, A. V. Buys, R. Erasmus, and E. Wendler, “Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region,” Nucl. Instrum. Meth. B 365(3), 342–346 (2015).
[Crossref]

Hofmann, T.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Hu, J.

J. Hu, R. Jia, B. Xin, B. Peng, Y. Wang, and Y. Zhang, “Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers,” Materials (Basel) 9(9), 743 (2016).
[Crossref] [PubMed]

Hu, R.

C. C. Tin, R. Hu, J. Liu, Y. Vohra, and Z. C. Feng, “Raman microprobe assessment of low-pressure chemical vapor deposition-grown 4H-SiC epilayers,” J. Cryst. Growth 158(4), 509–513 (1996).
[Crossref]

Hu, X.

Huang, C.-F.

C. Wells, J.-Y. Jiang, T.-F. Chang, C.-F. Huang, J. Ke, W. Luo, G. Xia, K. Y. Cheong, and F. Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Mater. Lett. 191, 196–199 (2017).
[Crossref]

Iakimov, T.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Ito, M.

S. Nakashima, T. Kitamura, T. Kato, K. Kojima, R. Kosugi, H. Okumura, H. Tsuchida, and M. Ito, “Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering,” Appl. Phys. Lett. 93(12), 121913 (2008).
[Crossref]

Ivanov, I. G.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Jia, R.

J. Hu, R. Jia, B. Xin, B. Peng, Y. Wang, and Y. Zhang, “Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers,” Materials (Basel) 9(9), 743 (2016).
[Crossref] [PubMed]

Jiang, J.-Y.

C. Wells, J.-Y. Jiang, T.-F. Chang, C.-F. Huang, J. Ke, W. Luo, G. Xia, K. Y. Cheong, and F. Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Mater. Lett. 191, 196–199 (2017).
[Crossref]

Jiang, X.

S. Chen, L. Wan, D. Xie, Z. R. Qiu, X. Jiang, C.-C. Tin, and Z. C. Feng, “Adducing crystalline features from Raman scattering studies of cubic SiC using different excitation wavelengths,” J. Phys. D Appl. Phys. 50(11), 115102 (2017).
[Crossref]

Jokubavicius, V.

Kamiyama, S.

Kato, T.

S. Nakashima, T. Kitamura, T. Kato, K. Kojima, R. Kosugi, H. Okumura, H. Tsuchida, and M. Ito, “Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering,” Appl. Phys. Lett. 93(12), 121913 (2008).
[Crossref]

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, and H. Harima, “Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy,” Phys. Rev. B 75(11), 115321 (2007).
[Crossref]

Ke, J.

C. Wells, J.-Y. Jiang, T.-F. Chang, C.-F. Huang, J. Ke, W. Luo, G. Xia, K. Y. Cheong, and F. Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Mater. Lett. 191, 196–199 (2017).
[Crossref]

Kimoto, T.

T. Kimoto, “Bulk and epitaxial growth of silicon carbide,” Prog. Cryst. Growth Charact. Mater. 62(2), 329–351 (2016).
[Crossref]

T. Tomita, S. Matsuo, T. Okada, T. Kimoto, H. Matsunami, T. Mitani, and S.-I. Nakashima, “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepipaxially grown film,” Appl. Phys. Lett. 87(24), 241906 (2005).
[Crossref]

Kitamura, T.

S. Nakashima, T. Kitamura, T. Kato, K. Kojima, R. Kosugi, H. Okumura, H. Tsuchida, and M. Ito, “Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering,” Appl. Phys. Lett. 93(12), 121913 (2008).
[Crossref]

T. Kitamura, S. Nakashima, T. Mitani, N. Nakamura, K. Furuta, and H. Okumura, “Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy,” Phys. Status Solidi4(7), 2375–2378 (2007) (c).
[Crossref]

Kojima, K.

S. Nakashima, T. Kitamura, T. Kato, K. Kojima, R. Kosugi, H. Okumura, H. Tsuchida, and M. Ito, “Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering,” Appl. Phys. Lett. 93(12), 121913 (2008).
[Crossref]

Kosugi, R.

S. Nakashima, T. Kitamura, T. Kato, K. Kojima, R. Kosugi, H. Okumura, H. Tsuchida, and M. Ito, “Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering,” Appl. Phys. Lett. 93(12), 121913 (2008).
[Crossref]

M. Okamoto, R. Kosugi, S. Nakashima, K. Fukuda, and K. Arai, “Deep UV excitation Raman spectroscopy of homoepitaxial 4H-SiC films grown by microwave plasma chemical capor deposition,” Mater. Sci. Forum 457–460, 629–632 (2004).
[Crossref]

Kühne, P.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Kuhudzai, R. J.

R. J. Kuhudzai, J. B. Malherbe, N. G. van der Berg, T. T. Hlatshwayo, O. Odutemowo, L. C. Prinshloo, A. V. Buys, R. Erasmus, and E. Wendler, “Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region,” Nucl. Instrum. Meth. B 365(3), 342–346 (2015).
[Crossref]

Li, K.

A. T. S. Wee, K. Li, and C. C. Tin, “Surface chemical states on LPCVD-grown 4H-SiC epilayers,” Appl. Surf. Sci. 126(1–2), 34–42 (1998).
[Crossref]

Linnarsson, M.

Lioliou, G.

Liu, C.

Liu, J.

C. C. Tin, R. Hu, J. Liu, Y. Vohra, and Z. C. Feng, “Raman microprobe assessment of low-pressure chemical vapor deposition-grown 4H-SiC epilayers,” J. Cryst. Growth 158(4), 509–513 (1996).
[Crossref]

Loudon, R.

R. Loudon, “The Raman effect in crystals,” Adv. Phys. 52, 423–482 (1964).
[Crossref]

Luo, W.

C. Wells, J.-Y. Jiang, T.-F. Chang, C.-F. Huang, J. Ke, W. Luo, G. Xia, K. Y. Cheong, and F. Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Mater. Lett. 191, 196–199 (2017).
[Crossref]

Malherbe, J. B.

R. J. Kuhudzai, J. B. Malherbe, N. G. van der Berg, T. T. Hlatshwayo, O. Odutemowo, L. C. Prinshloo, A. V. Buys, R. Erasmus, and E. Wendler, “Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region,” Nucl. Instrum. Meth. B 365(3), 342–346 (2015).
[Crossref]

Matsunami, H.

T. Tomita, S. Matsuo, T. Okada, T. Kimoto, H. Matsunami, T. Mitani, and S.-I. Nakashima, “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepipaxially grown film,” Appl. Phys. Lett. 87(24), 241906 (2005).
[Crossref]

Matsuo, S.

T. Tomita, S. Matsuo, T. Okada, T. Kimoto, H. Matsunami, T. Mitani, and S.-I. Nakashima, “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepipaxially grown film,” Appl. Phys. Lett. 87(24), 241906 (2005).
[Crossref]

Mazzillo, M. C.

Mitani, T.

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, and H. Harima, “Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy,” Phys. Rev. B 75(11), 115321 (2007).
[Crossref]

S. Nakashima, T. Mitani, J. Senzaki, H. Okumura, and T. Yamamoto, “Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals,” J. Appl. Phys. 97(12), 123507 (2005).
[Crossref]

T. Tomita, S. Matsuo, T. Okada, T. Kimoto, H. Matsunami, T. Mitani, and S.-I. Nakashima, “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepipaxially grown film,” Appl. Phys. Lett. 87(24), 241906 (2005).
[Crossref]

T. Kitamura, S. Nakashima, T. Mitani, N. Nakamura, K. Furuta, and H. Okumura, “Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy,” Phys. Status Solidi4(7), 2375–2378 (2007) (c).
[Crossref]

Nakamura, N.

T. Kitamura, S. Nakashima, T. Mitani, N. Nakamura, K. Furuta, and H. Okumura, “Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy,” Phys. Status Solidi4(7), 2375–2378 (2007) (c).
[Crossref]

Nakashima, S.

S. Nakashima, T. Kitamura, T. Kato, K. Kojima, R. Kosugi, H. Okumura, H. Tsuchida, and M. Ito, “Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering,” Appl. Phys. Lett. 93(12), 121913 (2008).
[Crossref]

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, and H. Harima, “Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy,” Phys. Rev. B 75(11), 115321 (2007).
[Crossref]

S. Nakashima, T. Mitani, J. Senzaki, H. Okumura, and T. Yamamoto, “Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals,” J. Appl. Phys. 97(12), 123507 (2005).
[Crossref]

S. Nakashima, H. Okumura, T. Yamamoto, and R. Shimidzu, “Deep-Ultraviolet Raman Microspectroscopy: Characterization of Wide-Gap Semiconductors,” Appl. Spectrosc. 58(2), 224–229 (2004).
[Crossref] [PubMed]

M. Okamoto, R. Kosugi, S. Nakashima, K. Fukuda, and K. Arai, “Deep UV excitation Raman spectroscopy of homoepitaxial 4H-SiC films grown by microwave plasma chemical capor deposition,” Mater. Sci. Forum 457–460, 629–632 (2004).
[Crossref]

T. Kitamura, S. Nakashima, T. Mitani, N. Nakamura, K. Furuta, and H. Okumura, “Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy,” Phys. Status Solidi4(7), 2375–2378 (2007) (c).
[Crossref]

Nakashima, S.-I.

T. Tomita, S. Matsuo, T. Okada, T. Kimoto, H. Matsunami, T. Mitani, and S.-I. Nakashima, “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepipaxially grown film,” Appl. Phys. Lett. 87(24), 241906 (2005).
[Crossref]

Nishizawa, S.

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, and H. Harima, “Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy,” Phys. Rev. B 75(11), 115321 (2007).
[Crossref]

Odutemowo, O.

R. J. Kuhudzai, J. B. Malherbe, N. G. van der Berg, T. T. Hlatshwayo, O. Odutemowo, L. C. Prinshloo, A. V. Buys, R. Erasmus, and E. Wendler, “Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region,” Nucl. Instrum. Meth. B 365(3), 342–346 (2015).
[Crossref]

Okada, T.

T. Tomita, S. Matsuo, T. Okada, T. Kimoto, H. Matsunami, T. Mitani, and S.-I. Nakashima, “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepipaxially grown film,” Appl. Phys. Lett. 87(24), 241906 (2005).
[Crossref]

Okamoto, M.

M. Okamoto, R. Kosugi, S. Nakashima, K. Fukuda, and K. Arai, “Deep UV excitation Raman spectroscopy of homoepitaxial 4H-SiC films grown by microwave plasma chemical capor deposition,” Mater. Sci. Forum 457–460, 629–632 (2004).
[Crossref]

Okumura, H.

S. Nakashima, T. Kitamura, T. Kato, K. Kojima, R. Kosugi, H. Okumura, H. Tsuchida, and M. Ito, “Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering,” Appl. Phys. Lett. 93(12), 121913 (2008).
[Crossref]

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, and H. Harima, “Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy,” Phys. Rev. B 75(11), 115321 (2007).
[Crossref]

S. Nakashima, T. Mitani, J. Senzaki, H. Okumura, and T. Yamamoto, “Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals,” J. Appl. Phys. 97(12), 123507 (2005).
[Crossref]

S. Nakashima, H. Okumura, T. Yamamoto, and R. Shimidzu, “Deep-Ultraviolet Raman Microspectroscopy: Characterization of Wide-Gap Semiconductors,” Appl. Spectrosc. 58(2), 224–229 (2004).
[Crossref] [PubMed]

T. Kitamura, S. Nakashima, T. Mitani, N. Nakamura, K. Furuta, and H. Okumura, “Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy,” Phys. Status Solidi4(7), 2375–2378 (2007) (c).
[Crossref]

Ou, H.

Ou, Y.

Peng, B.

J. Hu, R. Jia, B. Xin, B. Peng, Y. Wang, and Y. Zhang, “Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers,” Materials (Basel) 9(9), 743 (2016).
[Crossref] [PubMed]

Peng, J.

Peng, Y.

Ploog, K.

G. Abstreiter, E. Bauser, A. Fischer, and K. Ploog, “Raman Spectroscopy-A Versatile Tool for Characterization of Thin Films and Heterostructures of GaAs and AlxGa1-xAs,” Appl. Phys. (Berl.) 16(4), 345–352 (1978).
[Crossref]

Prinshloo, L. C.

R. J. Kuhudzai, J. B. Malherbe, N. G. van der Berg, T. T. Hlatshwayo, O. Odutemowo, L. C. Prinshloo, A. V. Buys, R. Erasmus, and E. Wendler, “Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region,” Nucl. Instrum. Meth. B 365(3), 342–346 (2015).
[Crossref]

Qiu, Z. R.

S. Chen, L. Wan, D. Xie, Z. R. Qiu, X. Jiang, C.-C. Tin, and Z. C. Feng, “Adducing crystalline features from Raman scattering studies of cubic SiC using different excitation wavelengths,” J. Phys. D Appl. Phys. 50(11), 115102 (2017).
[Crossref]

Roccaforte, F.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Schubert, M.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Sciuto, A.

Senzaki, J.

S. Nakashima, T. Mitani, J. Senzaki, H. Okumura, and T. Yamamoto, “Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals,” J. Appl. Phys. 97(12), 123507 (2005).
[Crossref]

Shimidzu, R.

Stanishev, V.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Syvajarvi, M.

Tin, C. C.

A. T. S. Wee, K. Li, and C. C. Tin, “Surface chemical states on LPCVD-grown 4H-SiC epilayers,” Appl. Surf. Sci. 126(1–2), 34–42 (1998).
[Crossref]

C. C. Tin, R. Hu, J. Liu, Y. Vohra, and Z. C. Feng, “Raman microprobe assessment of low-pressure chemical vapor deposition-grown 4H-SiC epilayers,” J. Cryst. Growth 158(4), 509–513 (1996).
[Crossref]

Tin, C.-C.

S. Chen, L. Wan, D. Xie, Z. R. Qiu, X. Jiang, C.-C. Tin, and Z. C. Feng, “Adducing crystalline features from Raman scattering studies of cubic SiC using different excitation wavelengths,” J. Phys. D Appl. Phys. 50(11), 115102 (2017).
[Crossref]

Tomita, T.

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, and H. Harima, “Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy,” Phys. Rev. B 75(11), 115321 (2007).
[Crossref]

T. Tomita, S. Matsuo, T. Okada, T. Kimoto, H. Matsunami, T. Mitani, and S.-I. Nakashima, “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepipaxially grown film,” Appl. Phys. Lett. 87(24), 241906 (2005).
[Crossref]

Tsuchida, H.

S. Nakashima, T. Kitamura, T. Kato, K. Kojima, R. Kosugi, H. Okumura, H. Tsuchida, and M. Ito, “Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering,” Appl. Phys. Lett. 93(12), 121913 (2008).
[Crossref]

van der Berg, N. G.

R. J. Kuhudzai, J. B. Malherbe, N. G. van der Berg, T. T. Hlatshwayo, O. Odutemowo, L. C. Prinshloo, A. V. Buys, R. Erasmus, and E. Wendler, “Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region,” Nucl. Instrum. Meth. B 365(3), 342–346 (2015).
[Crossref]

Vohra, Y.

C. C. Tin, R. Hu, J. Liu, Y. Vohra, and Z. C. Feng, “Raman microprobe assessment of low-pressure chemical vapor deposition-grown 4H-SiC epilayers,” J. Cryst. Growth 158(4), 509–513 (1996).
[Crossref]

Wan, L.

S. Chen, L. Wan, D. Xie, Z. R. Qiu, X. Jiang, C.-C. Tin, and Z. C. Feng, “Adducing crystalline features from Raman scattering studies of cubic SiC using different excitation wavelengths,” J. Phys. D Appl. Phys. 50(11), 115102 (2017).
[Crossref]

Wang, Y.

J. Hu, R. Jia, B. Xin, B. Peng, Y. Wang, and Y. Zhang, “Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers,” Materials (Basel) 9(9), 743 (2016).
[Crossref] [PubMed]

Wee, A. T. S.

A. T. S. Wee, K. Li, and C. C. Tin, “Surface chemical states on LPCVD-grown 4H-SiC epilayers,” Appl. Surf. Sci. 126(1–2), 34–42 (1998).
[Crossref]

Wells, C.

C. Wells, J.-Y. Jiang, T.-F. Chang, C.-F. Huang, J. Ke, W. Luo, G. Xia, K. Y. Cheong, and F. Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Mater. Lett. 191, 196–199 (2017).
[Crossref]

Wendler, E.

R. J. Kuhudzai, J. B. Malherbe, N. G. van der Berg, T. T. Hlatshwayo, O. Odutemowo, L. C. Prinshloo, A. V. Buys, R. Erasmus, and E. Wendler, “Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region,” Nucl. Instrum. Meth. B 365(3), 342–346 (2015).
[Crossref]

Wetteroth, T.

S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, “Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 85(12), 8353–8361 (1999).
[Crossref]

Wilson, S. R.

S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, “Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 85(12), 8353–8361 (1999).
[Crossref]

Xia, G.

C. Wells, J.-Y. Jiang, T.-F. Chang, C.-F. Huang, J. Ke, W. Luo, G. Xia, K. Y. Cheong, and F. Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Mater. Lett. 191, 196–199 (2017).
[Crossref]

Xie, D.

S. Chen, L. Wan, D. Xie, Z. R. Qiu, X. Jiang, C.-C. Tin, and Z. C. Feng, “Adducing crystalline features from Raman scattering studies of cubic SiC using different excitation wavelengths,” J. Phys. D Appl. Phys. 50(11), 115102 (2017).
[Crossref]

Xin, B.

J. Hu, R. Jia, B. Xin, B. Peng, Y. Wang, and Y. Zhang, “Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers,” Materials (Basel) 9(9), 743 (2016).
[Crossref] [PubMed]

Xu, X.

Yakimova, R.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Y. Ou, V. Jokubavicius, and S. Kamiyama,3C. Liu, R. Berg, M. Linnarsson, R. Yakimova, M. Syvajarvi, and H. Ou, “Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC,” Opt. Mater. Express 1(8), 1439–1446 (2011).

Yamamoto, T.

S. Nakashima, T. Mitani, J. Senzaki, H. Okumura, and T. Yamamoto, “Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals,” J. Appl. Phys. 97(12), 123507 (2005).
[Crossref]

S. Nakashima, H. Okumura, T. Yamamoto, and R. Shimidzu, “Deep-Ultraviolet Raman Microspectroscopy: Characterization of Wide-Gap Semiconductors,” Appl. Spectrosc. 58(2), 224–229 (2004).
[Crossref] [PubMed]

Zakharov, A. A.

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

Zhang, Y.

J. Hu, R. Jia, B. Xin, B. Peng, Y. Wang, and Y. Zhang, “Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers,” Materials (Basel) 9(9), 743 (2016).
[Crossref] [PubMed]

Zhao, F.

C. Wells, J.-Y. Jiang, T.-F. Chang, C.-F. Huang, J. Ke, W. Luo, G. Xia, K. Y. Cheong, and F. Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Mater. Lett. 191, 196–199 (2017).
[Crossref]

Zollner, S.

S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, “Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 85(12), 8353–8361 (1999).
[Crossref]

Adv. Phys. (1)

R. Loudon, “The Raman effect in crystals,” Adv. Phys. 52, 423–482 (1964).
[Crossref]

Appl. Phys. (Berl.) (1)

G. Abstreiter, E. Bauser, A. Fischer, and K. Ploog, “Raman Spectroscopy-A Versatile Tool for Characterization of Thin Films and Heterostructures of GaAs and AlxGa1-xAs,” Appl. Phys. (Berl.) 16(4), 345–352 (1978).
[Crossref]

Appl. Phys. Lett. (2)

T. Tomita, S. Matsuo, T. Okada, T. Kimoto, H. Matsunami, T. Mitani, and S.-I. Nakashima, “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepipaxially grown film,” Appl. Phys. Lett. 87(24), 241906 (2005).
[Crossref]

S. Nakashima, T. Kitamura, T. Kato, K. Kojima, R. Kosugi, H. Okumura, H. Tsuchida, and M. Ito, “Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering,” Appl. Phys. Lett. 93(12), 121913 (2008).
[Crossref]

Appl. Spectrosc. (1)

Appl. Surf. Sci. (1)

A. T. S. Wee, K. Li, and C. C. Tin, “Surface chemical states on LPCVD-grown 4H-SiC epilayers,” Appl. Surf. Sci. 126(1–2), 34–42 (1998).
[Crossref]

Carbon (1)

C. Bouhafs, A. A. Zakharov, I. G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchiev, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC,” Carbon 116, 722–732 (2017).
[Crossref]

J. Appl. Phys. (2)

S. Nakashima, T. Mitani, J. Senzaki, H. Okumura, and T. Yamamoto, “Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals,” J. Appl. Phys. 97(12), 123507 (2005).
[Crossref]

S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, “Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 85(12), 8353–8361 (1999).
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Opt. Express (1)

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Phys. Rev. B (1)

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, and H. Harima, “Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy,” Phys. Rev. B 75(11), 115321 (2007).
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H. Ashraf, “Investigation of Symmetries of Phonons in 4H and 6H-SiC by Infrared Absorption and Raman Spectroscopy,” Ph, D. thesis, Linköping University, 2005.

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Figures (5)

Fig. 1
Fig. 1 Raman spectra of five undoped 4H-SiC/n+ 4H-SiC samples, excited by the 325 nm laser.
Fig. 2
Fig. 2 TO modes in RS spectra in different testing points from the center to the edge of sample H1 (distances between the measuring positions and the border of H1 are D1 = 20000 μm, D2 = 10000 μm, D3 = 5000 μm, D4 = 2000 μm, D5 = 500 μm, D6 = 100 μm).
Fig. 3
Fig. 3 The variation of intensity ratios E1(TO)/E2(TO) with probing positions from the center to the edge of five undoped 4H-SiC/n+ 4H-SiC samples.
Fig. 4
Fig. 4 Raman spectra of H1 sample, excited by the 266/ 325/360/514 nm laser.
Fig. 5
Fig. 5 The Raman E2(TO) modes and fitting for five 4H-SiC homo-epitaxial samples H1-H5, under excitation of 325nm laser.

Tables (3)

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Tabel 1 The properties of both E1(TO) and E2(TO) modes from five 4H-SiC homo-epitaxial samples

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Tabel 2 The line shape parameters of both E1(TO) and E2(TO) modes from the sample H1 with excited by 266/325/360/514 nm laser

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Table 3 Fitted parameters on E2(TO) modes for five samples H1-H5, excited by 325 nm laser

Equations (2)

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I( ω ) 0 1 exp( q 2 L 2 4 ) d 3 q [ ωω( q ) ] 2 + ( Γ 0 2 ) 2
ω( q )=AB q 2

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