Abstract

High quality semi-polar  (112¯2) plane AlGaN-based multiple quantum wells (MQWs) were successfully grown on  (101¯0) m-plane sapphire substrates with metal-organic chemical vapor deposition (MOCVD) technology and the effects of indium (In) surfactant on the structural and optical properties of the AlGaN-based MQWs were investigated intensively. The characterization results revealed that the surface morphology as well as the crystalline quality for the semi-polar  (112¯2) plane AlGaN MQWs could be improved remarkably by adopting In as surfactant during the MOCVD growth process. Furthermore, the integrated MQWs-related excition emission peak intensity and the radiative recombination probabilities in MQWs could be increased as well with the help of In-surfactant, resulting an enhanced internal quantum efficiency.

© 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article
OSA Recommended Articles
Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser

Yingdong Tian, Jianchang Yan, Yun Zhang, Xiang Chen, Yanan Guo, Peipei Cong, Lili Sun, Qinjin Wang, Enqing Guo, Xuecheng Wei, Junxi Wang, and Jinmin Li
Opt. Express 23(9) 11334-11340 (2015)

Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD

Hanling Long, Shuai Wang, Jiangnan Dai, Feng Wu, Jun Zhang, Jingwen Chen, Renli Liang, Zhe Chuan Feng, and Changqing Chen
Opt. Express 26(2) 680-686 (2018)

Enhanced light emission from AlGaN/GaN multiple quantum wells using the localized surface plasmon effect by aluminum nanoring patterns

Kyung Rock Son, Byeong Ryong Lee, Min Ho Jang, Hyun Chul Park, Yong Hoon Cho, and Tae Geun Kim
Photon. Res. 6(1) 30-36 (2018)

References

  • View by:
  • |
  • |
  • |

  1. M. S. Shur and R. Gaska, “Deep-Ultraviolet Light-Emitting Diodes,” IEEE Trans. Electron Dev. 57(1), 12–25 (2010).
  2. C.-Y. Cho, J.-J. Kim, S.-J. Lee, S.-H. Hong, K. J. Lee, S.-Y. Yim, and S.-J. Park, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 10, 045503 (2017).
  3. N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).
  4. N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies, “Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells,” J. Appl. Phys. 86(7), 3714–3720 (1999).
  5. B. A. Haskell, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Progress in the growth of nonpolar gallium nitride,” Phys. Status Solidi, B Basic Res. 244(8), 2847–2858 (2007).
  6. M. Funato and Y. Kawakami, “Semi/non-polar nitride quantum wells for high-efficient light emitters,” Proc. SPIE 9363, 93631T (2015).
  7. K. Balakrishnan, V. Adivarahan, Q. Fareed, M. Lachab, B. Zhang, and A. Khan, “First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells,” Jpn. J. Appl. Phys. 49, 040206 (2010).
  8. C.-P. Wang and Y.-R. Wu, “Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode,” J. Appl. Phys. 112, 033104 (2012).
  9. S. Ichikawa, M. Funato, and Y. Kawakami, “Approaches to highly efficient UV emitters based on AlGaN quantum wells,” Proc. SPIE 9748, 97480U (2016).
  10. S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).
  11. H. Sun, E. F. Pecora, J. Woodward, D. J. Smith, L. Dal Negro, and T. D. Moustakas, “Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH),” Status Solidi A 213(5), 1165–1169 (2016).
  12. Q. Dai, X. Zhang, J. Zhao, H. Luan, Z. Liang, and Y. Cui, “Effects of Si-doping on characteristics of semi-polar (1122) plane Al0.45Ga0.55N epi-layers,” Mater. Sci. Semicond. Process. 58, 30–33 (2017).
  13. Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).
  14. J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).
  15. B. Deveaud, J. Y. Emery, A. Chomette, B. Lambert, and M. Baudet, “Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlattice,” Appl. Phys. Lett. 45(10), 1078–1080 (1984).
  16. M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, “Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys. 42, L235–L238 (2003).
  17. D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).
  18. D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).
  19. F. Wu, J. Zhang, S. Wang, H. Long, J. Dai, Z. C. Feng, Z. Gong, and C. Chen, “Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence,” Opt. Mater. Express 5(11), 2608–2614 (2015).
  20. Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).
  21. H.-M. Huang, C.-Y. Chang, Y. Lan, T.-C. Lu, H.-C. Kuo, and Sh.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100, 261901 (2012).
  22. S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, and Y. Kawakami, “High quality semipolar (1-102) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities,” Appl. Phys. Lett. 104, 252102 (2014).

2017 (4)

C.-Y. Cho, J.-J. Kim, S.-J. Lee, S.-H. Hong, K. J. Lee, S.-Y. Yim, and S.-J. Park, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 10, 045503 (2017).

Q. Dai, X. Zhang, J. Zhao, H. Luan, Z. Liang, and Y. Cui, “Effects of Si-doping on characteristics of semi-polar (1122) plane Al0.45Ga0.55N epi-layers,” Mater. Sci. Semicond. Process. 58, 30–33 (2017).

Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

2016 (3)

H. Sun, E. F. Pecora, J. Woodward, D. J. Smith, L. Dal Negro, and T. D. Moustakas, “Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH),” Status Solidi A 213(5), 1165–1169 (2016).

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

S. Ichikawa, M. Funato, and Y. Kawakami, “Approaches to highly efficient UV emitters based on AlGaN quantum wells,” Proc. SPIE 9748, 97480U (2016).

2015 (2)

2014 (3)

S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, and Y. Kawakami, “High quality semipolar (1-102) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities,” Appl. Phys. Lett. 104, 252102 (2014).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

2012 (3)

C.-P. Wang and Y.-R. Wu, “Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode,” J. Appl. Phys. 112, 033104 (2012).

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

H.-M. Huang, C.-Y. Chang, Y. Lan, T.-C. Lu, H.-C. Kuo, and Sh.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100, 261901 (2012).

2010 (2)

M. S. Shur and R. Gaska, “Deep-Ultraviolet Light-Emitting Diodes,” IEEE Trans. Electron Dev. 57(1), 12–25 (2010).

K. Balakrishnan, V. Adivarahan, Q. Fareed, M. Lachab, B. Zhang, and A. Khan, “First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells,” Jpn. J. Appl. Phys. 49, 040206 (2010).

2007 (1)

B. A. Haskell, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Progress in the growth of nonpolar gallium nitride,” Phys. Status Solidi, B Basic Res. 244(8), 2847–2858 (2007).

2006 (1)

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

2003 (1)

M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, “Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys. 42, L235–L238 (2003).

1999 (1)

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies, “Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells,” J. Appl. Phys. 86(7), 3714–3720 (1999).

1984 (1)

B. Deveaud, J. Y. Emery, A. Chomette, B. Lambert, and M. Baudet, “Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlattice,” Appl. Phys. Lett. 45(10), 1078–1080 (1984).

Adivarahan, V.

K. Balakrishnan, V. Adivarahan, Q. Fareed, M. Lachab, B. Zhang, and A. Khan, “First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells,” Jpn. J. Appl. Phys. 49, 040206 (2010).

Avrutin, V.

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Bai, J.

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

Balakrishnan, K.

K. Balakrishnan, V. Adivarahan, Q. Fareed, M. Lachab, B. Zhang, and A. Khan, “First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells,” Jpn. J. Appl. Phys. 49, 040206 (2010).

Baudet, M.

B. Deveaud, J. Y. Emery, A. Chomette, B. Lambert, and M. Baudet, “Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlattice,” Appl. Phys. Lett. 45(10), 1078–1080 (1984).

Bretagnon, T.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Bruckbauer, J.

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

Carlin, J. F.

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

Chang, C.-Y.

H.-M. Huang, C.-Y. Chang, Y. Lan, T.-C. Lu, H.-C. Kuo, and Sh.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100, 261901 (2012).

Chen, C.

F. Wu, J. Zhang, S. Wang, H. Long, J. Dai, Z. C. Feng, Z. Gong, and C. Chen, “Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence,” Opt. Mater. Express 5(11), 2608–2614 (2015).

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Chen, S.

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Chen, Y.

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Cho, C.-Y.

C.-Y. Cho, J.-J. Kim, S.-J. Lee, S.-H. Hong, K. J. Lee, S.-Y. Yim, and S.-J. Park, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 10, 045503 (2017).

Chomette, A.

B. Deveaud, J. Y. Emery, A. Chomette, B. Lambert, and M. Baudet, “Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlattice,” Appl. Phys. Lett. 45(10), 1078–1080 (1984).

Craven, M. D.

M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, “Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys. 42, L235–L238 (2003).

Cui, Y.

Q. Dai, X. Zhang, J. Zhao, H. Luan, Z. Liang, and Y. Cui, “Effects of Si-doping on characteristics of semi-polar (1122) plane Al0.45Ga0.55N epi-layers,” Mater. Sci. Semicond. Process. 58, 30–33 (2017).

Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

Dai, J.

F. Wu, J. Zhang, S. Wang, H. Long, J. Dai, Z. C. Feng, Z. Gong, and C. Chen, “Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence,” Opt. Mater. Express 5(11), 2608–2614 (2015).

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Dai, Q.

Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).

Q. Dai, X. Zhang, J. Zhao, H. Luan, Z. Liang, and Y. Cui, “Effects of Si-doping on characteristics of semi-polar (1122) plane Al0.45Ga0.55N epi-layers,” Mater. Sci. Semicond. Process. 58, 30–33 (2017).

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

Dal Negro, L.

H. Sun, E. F. Pecora, J. Woodward, D. J. Smith, L. Dal Negro, and T. D. Moustakas, “Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH),” Status Solidi A 213(5), 1165–1169 (2016).

Dalmasso, S.

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies, “Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells,” J. Appl. Phys. 86(7), 3714–3720 (1999).

Damilano, B.

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies, “Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells,” J. Appl. Phys. 86(7), 3714–3720 (1999).

DenBaars, S. P.

B. A. Haskell, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Progress in the growth of nonpolar gallium nitride,” Phys. Status Solidi, B Basic Res. 244(8), 2847–2858 (2007).

M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, “Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys. 42, L235–L238 (2003).

Deveaud, B.

B. Deveaud, J. Y. Emery, A. Chomette, B. Lambert, and M. Baudet, “Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlattice,” Appl. Phys. Lett. 45(10), 1078–1080 (1984).

Emery, J. Y.

B. Deveaud, J. Y. Emery, A. Chomette, B. Lambert, and M. Baudet, “Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlattice,” Appl. Phys. Lett. 45(10), 1078–1080 (1984).

Fang, Y.

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Fareed, Q.

K. Balakrishnan, V. Adivarahan, Q. Fareed, M. Lachab, B. Zhang, and A. Khan, “First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells,” Jpn. J. Appl. Phys. 49, 040206 (2010).

Feltin, E.

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

Feng, Z. C.

Funato, M.

S. Ichikawa, M. Funato, and Y. Kawakami, “Approaches to highly efficient UV emitters based on AlGaN quantum wells,” Proc. SPIE 9748, 97480U (2016).

M. Funato and Y. Kawakami, “Semi/non-polar nitride quantum wells for high-efficient light emitters,” Proc. SPIE 9363, 93631T (2015).

S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, and Y. Kawakami, “High quality semipolar (1-102) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities,” Appl. Phys. Lett. 104, 252102 (2014).

Gaska, R.

M. S. Shur and R. Gaska, “Deep-Ultraviolet Light-Emitting Diodes,” IEEE Trans. Electron Dev. 57(1), 12–25 (2010).

Gil, B.

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Gong, Y.

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

Gong, Z.

Grandjean, N.

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies, “Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells,” J. Appl. Phys. 86(7), 3714–3720 (1999).

Guizal, B.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Haskell, B. A.

B. A. Haskell, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Progress in the growth of nonpolar gallium nitride,” Phys. Status Solidi, B Basic Res. 244(8), 2847–2858 (2007).

Hong, S.-H.

C.-Y. Cho, J.-J. Kim, S.-J. Lee, S.-H. Hong, K. J. Lee, S.-Y. Yim, and S.-J. Park, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 10, 045503 (2017).

Hu, G.

Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

Huang, H.-M.

H.-M. Huang, C.-Y. Chang, Y. Lan, T.-C. Lu, H.-C. Kuo, and Sh.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100, 261901 (2012).

Ichikawa, S.

S. Ichikawa, M. Funato, and Y. Kawakami, “Approaches to highly efficient UV emitters based on AlGaN quantum wells,” Proc. SPIE 9748, 97480U (2016).

S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, and Y. Kawakami, “High quality semipolar (1-102) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities,” Appl. Phys. Lett. 104, 252102 (2014).

Ilegems, M.

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

Iwata, Y.

S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, and Y. Kawakami, “High quality semipolar (1-102) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities,” Appl. Phys. Lett. 104, 252102 (2014).

Izyumskaya, N.

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Jin, P.

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Jiu, L.

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

Julien, F. H.

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

Kang, J.

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Kawakami, Y.

S. Ichikawa, M. Funato, and Y. Kawakami, “Approaches to highly efficient UV emitters based on AlGaN quantum wells,” Proc. SPIE 9748, 97480U (2016).

M. Funato and Y. Kawakami, “Semi/non-polar nitride quantum wells for high-efficient light emitters,” Proc. SPIE 9363, 93631T (2015).

S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, and Y. Kawakami, “High quality semipolar (1-102) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities,” Appl. Phys. Lett. 104, 252102 (2014).

Khan, A.

K. Balakrishnan, V. Adivarahan, Q. Fareed, M. Lachab, B. Zhang, and A. Khan, “First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells,” Jpn. J. Appl. Phys. 49, 040206 (2010).

Kim, J.-J.

C.-Y. Cho, J.-J. Kim, S.-J. Lee, S.-H. Hong, K. J. Lee, S.-Y. Yim, and S.-J. Park, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 10, 045503 (2017).

Kuo, H.-C.

H.-M. Huang, C.-Y. Chang, Y. Lan, T.-C. Lu, H.-C. Kuo, and Sh.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100, 261901 (2012).

Lachab, M.

K. Balakrishnan, V. Adivarahan, Q. Fareed, M. Lachab, B. Zhang, and A. Khan, “First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells,” Jpn. J. Appl. Phys. 49, 040206 (2010).

Lambert, B.

B. Deveaud, J. Y. Emery, A. Chomette, B. Lambert, and M. Baudet, “Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlattice,” Appl. Phys. Lett. 45(10), 1078–1080 (1984).

Lan, Y.

H.-M. Huang, C.-Y. Chang, Y. Lan, T.-C. Lu, H.-C. Kuo, and Sh.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100, 261901 (2012).

Laügt, M.

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies, “Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells,” J. Appl. Phys. 86(7), 3714–3720 (1999).

Leach, J. H.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Lee, K. J.

C.-Y. Cho, J.-J. Kim, S.-J. Lee, S.-H. Hong, K. J. Lee, S.-Y. Yim, and S.-J. Park, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 10, 045503 (2017).

Lee, S.-J.

C.-Y. Cho, J.-J. Kim, S.-J. Lee, S.-H. Hong, K. J. Lee, S.-Y. Yim, and S.-J. Park, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 10, 045503 (2017).

Leroux, M.

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies, “Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells,” J. Appl. Phys. 86(7), 3714–3720 (1999).

Li, J.

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Li, W.

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Li, Y.

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Li, Z.

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

Liang, Z.

Q. Dai, X. Zhang, J. Zhao, H. Luan, Z. Liang, and Y. Cui, “Effects of Si-doping on characteristics of semi-polar (1122) plane Al0.45Ga0.55N epi-layers,” Mater. Sci. Semicond. Process. 58, 30–33 (2017).

Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).

Long, H.

Lu, T.-C.

H.-M. Huang, C.-Y. Chang, Y. Lan, T.-C. Lu, H.-C. Kuo, and Sh.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100, 261901 (2012).

Luan, H.

Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).

Q. Dai, X. Zhang, J. Zhao, H. Luan, Z. Liang, and Y. Cui, “Effects of Si-doping on characteristics of semi-polar (1122) plane Al0.45Ga0.55N epi-layers,” Mater. Sci. Semicond. Process. 58, 30–33 (2017).

Martin, R. W.

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

Massies, J.

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies, “Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells,” J. Appl. Phys. 86(7), 3714–3720 (1999).

Monavarian, M.

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Morkoç, H.

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Mosca, M.

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

Moustakas, T. D.

H. Sun, E. F. Pecora, J. Woodward, D. J. Smith, L. Dal Negro, and T. D. Moustakas, “Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH),” Status Solidi A 213(5), 1165–1169 (2016).

Nagata, S.

S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, and Y. Kawakami, “High quality semipolar (1-102) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities,” Appl. Phys. Lett. 104, 252102 (2014).

Nakamura, S.

B. A. Haskell, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Progress in the growth of nonpolar gallium nitride,” Phys. Status Solidi, B Basic Res. 244(8), 2847–2858 (2007).

Nevou, L.

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

Nicolay, S.

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

Okur, S.

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Özgür, Ü.

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Park, S.-J.

C.-Y. Cho, J.-J. Kim, S.-J. Lee, S.-H. Hong, K. J. Lee, S.-Y. Yim, and S.-J. Park, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 10, 045503 (2017).

Pecora, E. F.

H. Sun, E. F. Pecora, J. Woodward, D. J. Smith, L. Dal Negro, and T. D. Moustakas, “Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH),” Status Solidi A 213(5), 1165–1169 (2016).

Rosales, D.

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Shur, M. S.

M. S. Shur and R. Gaska, “Deep-Ultraviolet Light-Emitting Diodes,” IEEE Trans. Electron Dev. 57(1), 12–25 (2010).

Smith, D. J.

H. Sun, E. F. Pecora, J. Woodward, D. J. Smith, L. Dal Negro, and T. D. Moustakas, “Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH),” Status Solidi A 213(5), 1165–1169 (2016).

Speck, J. S.

B. A. Haskell, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Progress in the growth of nonpolar gallium nitride,” Phys. Status Solidi, B Basic Res. 244(8), 2847–2858 (2007).

M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, “Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys. 42, L235–L238 (2003).

Sun, H.

H. Sun, E. F. Pecora, J. Woodward, D. J. Smith, L. Dal Negro, and T. D. Moustakas, “Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH),” Status Solidi A 213(5), 1165–1169 (2016).

Tchernycheva, M.

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

Waltereit, P.

M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, “Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys. 42, L235–L238 (2003).

Wang, C.-P.

C.-P. Wang and Y.-R. Wu, “Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode,” J. Appl. Phys. 112, 033104 (2012).

Wang, L.

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

Wang, N.

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

Wang, S.

F. Wu, J. Zhang, S. Wang, H. Long, J. Dai, Z. C. Feng, Z. Gong, and C. Chen, “Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence,” Opt. Mater. Express 5(11), 2608–2614 (2015).

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

Wang, Sh.-C.

H.-M. Huang, C.-Y. Chang, Y. Lan, T.-C. Lu, H.-C. Kuo, and Sh.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100, 261901 (2012).

Wang, T.

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

Woodward, J.

H. Sun, E. F. Pecora, J. Woodward, D. J. Smith, L. Dal Negro, and T. D. Moustakas, “Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH),” Status Solidi A 213(5), 1165–1169 (2016).

Wu, F.

F. Wu, J. Zhang, S. Wang, H. Long, J. Dai, Z. C. Feng, Z. Gong, and C. Chen, “Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence,” Opt. Mater. Express 5(11), 2608–2614 (2015).

M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, “Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys. 42, L235–L238 (2003).

Wu, Y.-R.

C.-P. Wang and Y.-R. Wu, “Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode,” J. Appl. Phys. 112, 033104 (2012).

Wu, Z.

Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

Yim, S.-Y.

C.-Y. Cho, J.-J. Kim, S.-J. Lee, S.-H. Hong, K. J. Lee, S.-Y. Yim, and S.-J. Park, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 10, 045503 (2017).

Yin, J.

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Zhang, B.

K. Balakrishnan, V. Adivarahan, Q. Fareed, M. Lachab, B. Zhang, and A. Khan, “First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells,” Jpn. J. Appl. Phys. 49, 040206 (2010).

Zhang, F.

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

Zhang, H.

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

Zhang, J.

Zhang, X.

Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).

Q. Dai, X. Zhang, J. Zhao, H. Luan, Z. Liang, and Y. Cui, “Effects of Si-doping on characteristics of semi-polar (1122) plane Al0.45Ga0.55N epi-layers,” Mater. Sci. Semicond. Process. 58, 30–33 (2017).

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

Zhang, Y.

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

Zhao, J.

Q. Dai, X. Zhang, J. Zhao, H. Luan, Z. Liang, and Y. Cui, “Effects of Si-doping on characteristics of semi-polar (1122) plane Al0.45Ga0.55N epi-layers,” Mater. Sci. Semicond. Process. 58, 30–33 (2017).

Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

Adv. Optical Mater. (1)

J. Yin, Y. Li, S. Chen, J. Li, J. Kang, W. Li, P. Jin, Y. Chen, Z. Wu, J. Dai, Y. Fang, and C. Chen, “Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells,” Adv. Optical Mater. 2, 451–458 (2014).

Appl. Phys. Express (2)

C.-Y. Cho, J.-J. Kim, S.-J. Lee, S.-H. Hong, K. J. Lee, S.-Y. Yim, and S.-J. Park, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 10, 045503 (2017).

N. Wang, X. Zhang, J. Zhao, H. Zhang, Z. Wu, Q. Dai, S. Wang, G. Hu, and Y. Cui, “Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers,” Appl. Phys. Express 5, 122103 (2012).

Appl. Phys. Lett. (5)

B. Deveaud, J. Y. Emery, A. Chomette, B. Lambert, and M. Baudet, “Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlattice,” Appl. Phys. Lett. 45(10), 1078–1080 (1984).

S. Nicolay, E. Feltin, J. F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, and N. Grandjean, “Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions,” Appl. Phys. Lett. 88, 151902 (2006).

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, and T. Wang, “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition,” Appl. Phys. Lett. 110, 091102 (2017).

H.-M. Huang, C.-Y. Chang, Y. Lan, T.-C. Lu, H.-C. Kuo, and Sh.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100, 261901 (2012).

S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, and Y. Kawakami, “High quality semipolar (1-102) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities,” Appl. Phys. Lett. 104, 252102 (2014).

IEEE Trans. Electron Dev. (1)

M. S. Shur and R. Gaska, “Deep-Ultraviolet Light-Emitting Diodes,” IEEE Trans. Electron Dev. 57(1), 12–25 (2010).

J. Appl. Phys. (3)

C.-P. Wang and Y.-R. Wu, “Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode,” J. Appl. Phys. 112, 033104 (2012).

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies, “Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells,” J. Appl. Phys. 86(7), 3714–3720 (1999).

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115, 073510 (2014).

J. Mater. Sci. Mater. Electron. (1)

Z. Liang, X. Zhang, Q. Dai, H. Luan, J. Zhao, Z. Wu, G. Hu, and Y. Cui, “Indium-surfactant-assisted epitaxial growth of semi-polar (11-22) plane Al0.42Ga0.58N films,” J. Mater. Sci. Mater. Electron. 28, 15217–15223 (2017).

Jpn. J. Appl. Phys. (2)

M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, “Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys. 42, L235–L238 (2003).

K. Balakrishnan, V. Adivarahan, Q. Fareed, M. Lachab, B. Zhang, and A. Khan, “First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells,” Jpn. J. Appl. Phys. 49, 040206 (2010).

Mater. Sci. Semicond. Process. (1)

Q. Dai, X. Zhang, J. Zhao, H. Luan, Z. Liang, and Y. Cui, “Effects of Si-doping on characteristics of semi-polar (1122) plane Al0.45Ga0.55N epi-layers,” Mater. Sci. Semicond. Process. 58, 30–33 (2017).

Opt. Mater. Express (1)

Phys. Status Solidi, B Basic Res. (1)

B. A. Haskell, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Progress in the growth of nonpolar gallium nitride,” Phys. Status Solidi, B Basic Res. 244(8), 2847–2858 (2007).

Proc. SPIE (3)

M. Funato and Y. Kawakami, “Semi/non-polar nitride quantum wells for high-efficient light emitters,” Proc. SPIE 9363, 93631T (2015).

S. Ichikawa, M. Funato, and Y. Kawakami, “Approaches to highly efficient UV emitters based on AlGaN quantum wells,” Proc. SPIE 9748, 97480U (2016).

D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs,” Proc. SPIE 9363, 93630J (2016).

Status Solidi A (1)

H. Sun, E. F. Pecora, J. Woodward, D. J. Smith, L. Dal Negro, and T. D. Moustakas, “Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH),” Status Solidi A 213(5), 1165–1169 (2016).

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1 The schematic layer structure for the two semi-polar  (11 2 ¯ 2) plane AlGaN-based MQW samples A and B.
Fig. 2
Fig. 2 The 2D-view AFM images for the semi-polar  (11 2 ¯ 2) plane AlGaN-based MQW samples A (a) and B (b) measured with a detection area of 5 × 5 µm2.
Fig. 3
Fig. 3 The HR-XRD 2θ–ω scanning curves for the semi-polar  (11 2 ¯ 2) plane AlGaN-based MQW samples A and B (a) and the cross-sectional SEM micrographs for sample B (b).
Fig. 4
Fig. 4 The normalized RT-PL spectra (a), the TD-PL spectra measured within the temperature range of 10-300 K (b, c), and the integrated PL intensity as a function of temperature (d) for the semi-polar  (11 2 ¯ 2) plane AlGaN-based MQW samples A and B.

Metrics