Abstract

PL dynamics of InGaN/GaN multiple quantum well (MQW) LEDs grown on SixC1-x/SiO2/Si substrates were measured in order to explore the real carrier recombination mechanism related to existing strain in polar MQWs, which took advantage of well strain control on GaN/ SixC1-x interfaces by varying x value. Contrary to earlier reports, the exciton localization model was found to be better at describing the non-exponential decay of PL than the bi-molecular recombination model, which indicated that the correlation between the electron and the hole could not be ignored in polar MQWs. Progressive strain surprisingly accelerated the radiative recombination in MQWs accompanied by accelerating nonradiative recombination. This was attributed to the enhanced formations of fast localized recombination centers associated with well thickness variations.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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  1. M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
    [Crossref]
  2. S. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
    [Crossref]
  3. Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
    [Crossref] [PubMed]
  4. T. J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R. A. Oliver, and A. J. Shields, “Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures,” Appl. Phys. Lett. 109(15), 151110 (2016).
    [Crossref]
  5. H. Jeong, H. J. Jeong, H. M. Oh, C.-H. Hong, E.-K. Suh, G. Lerondel, and M. S. Jeong, “Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes,” Sci. Rep. 5(1), 9373 (2015).
    [Crossref] [PubMed]
  6. M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
    [Crossref] [PubMed]
  7. T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
    [Crossref]
  8. P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
    [Crossref]
  9. J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization,” Appl. Phys. Lett. 97(20), 201112 (2010).
    [Crossref]
  10. H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6(6), 065013 (2016).
    [Crossref]
  11. A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
    [Crossref]
  12. Y. Iwata, R. G. Banal, S. Ichikawa, M. Funato, and Y. Kawakami, “Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy,” J. Appl. Phys. 117(7), 075701 (2015).
    [Crossref]
  13. D. C. Johnston, “Stretched exponential relaxation arising from a continuous sum of exponential decays,” Phys. Rev. B 74(18), 184430 (2006).
    [Crossref]
  14. S. Karpov, “ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review,” Opt. Quantum Electron. 47(6), 1293–1303 (2015).
    [Crossref]
  15. T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter, “Room temperature excitonic recombination in GaInN/GaN quantum wells,” Appl. Phys. Lett. 103(20), 202106 (2013).
    [Crossref]
  16. C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
    [Crossref] [PubMed]
  17. D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
    [Crossref]
  18. Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
    [Crossref]

2017 (1)

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

2016 (4)

T. J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R. A. Oliver, and A. J. Shields, “Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures,” Appl. Phys. Lett. 109(15), 151110 (2016).
[Crossref]

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6(6), 065013 (2016).
[Crossref]

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

2015 (5)

S. Karpov, “ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review,” Opt. Quantum Electron. 47(6), 1293–1303 (2015).
[Crossref]

Y. Iwata, R. G. Banal, S. Ichikawa, M. Funato, and Y. Kawakami, “Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy,” J. Appl. Phys. 117(7), 075701 (2015).
[Crossref]

H. Jeong, H. J. Jeong, H. M. Oh, C.-H. Hong, E.-K. Suh, G. Lerondel, and M. S. Jeong, “Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes,” Sci. Rep. 5(1), 9373 (2015).
[Crossref] [PubMed]

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

2014 (1)

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

2013 (1)

T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter, “Room temperature excitonic recombination in GaInN/GaN quantum wells,” Appl. Phys. Lett. 103(20), 202106 (2013).
[Crossref]

2010 (1)

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization,” Appl. Phys. Lett. 97(20), 201112 (2010).
[Crossref]

2006 (1)

D. C. Johnston, “Stretched exponential relaxation arising from a continuous sum of exponential decays,” Phys. Rev. B 74(18), 184430 (2006).
[Crossref]

2005 (1)

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
[Crossref]

2003 (2)

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

S. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

2002 (1)

M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
[Crossref]

Ali, M.

T. J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R. A. Oliver, and A. J. Shields, “Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures,” Appl. Phys. Lett. 109(15), 151110 (2016).
[Crossref]

Alves, E.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Badcock, T. J.

T. J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R. A. Oliver, and A. J. Shields, “Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures,” Appl. Phys. Lett. 109(15), 151110 (2016).
[Crossref]

Banal, R. G.

Y. Iwata, R. G. Banal, S. Ichikawa, M. Funato, and Y. Kawakami, “Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy,” J. Appl. Phys. 117(7), 075701 (2015).
[Crossref]

Barnard, J. S.

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
[Crossref]

Bockowski, M.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Bremers, H.

T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter, “Room temperature excitonic recombination in GaInN/GaN quantum wells,” Appl. Phys. Lett. 103(20), 202106 (2013).
[Crossref]

Bretagnon, T.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Chang, C.-Y.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Chang, J.-H.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Cheng, C.-H.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Chernikov, A.

T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter, “Room temperature excitonic recombination in GaInN/GaN quantum wells,” Appl. Phys. Lett. 103(20), 202106 (2013).
[Crossref]

Chi, Y.-C.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Chichibu, S.

S. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

Correia, M. R.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Damilano, B.

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

Dawson, P.

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
[Crossref]

DenBaars, S. P.

S. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

Esteves, T. C.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Feng, Z. C.

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

Fu, H.

H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6(6), 065013 (2016).
[Crossref]

Funato, M.

Y. Iwata, R. G. Banal, S. Ichikawa, M. Funato, and Y. Kawakami, “Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy,” J. Appl. Phys. 117(7), 075701 (2015).
[Crossref]

Gerhard, M.

T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter, “Room temperature excitonic recombination in GaInN/GaN quantum wells,” Appl. Phys. Lett. 103(20), 202106 (2013).
[Crossref]

Gil, B.

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Godfrey, M. J.

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
[Crossref]

Graham, D. M.

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
[Crossref]

Han, Y.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

Hangleiter, A.

T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter, “Room temperature excitonic recombination in GaInN/GaN quantum wells,” Appl. Phys. Lett. 103(20), 202106 (2013).
[Crossref]

Hao, Z.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization,” Appl. Phys. Lett. 97(20), 201112 (2010).
[Crossref]

Hong, C.-H.

H. Jeong, H. J. Jeong, H. M. Oh, C.-H. Hong, E.-K. Suh, G. Lerondel, and M. S. Jeong, “Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes,” Sci. Rep. 5(1), 9373 (2015).
[Crossref] [PubMed]

Humphreys, C. J.

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
[Crossref]

Ichikawa, S.

Y. Iwata, R. G. Banal, S. Ichikawa, M. Funato, and Y. Kawakami, “Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy,” J. Appl. Phys. 117(7), 075701 (2015).
[Crossref]

Ishida, Y.

S. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

Iwata, Y.

Y. Iwata, R. G. Banal, S. Ichikawa, M. Funato, and Y. Kawakami, “Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy,” J. Appl. Phys. 117(7), 075701 (2015).
[Crossref]

Jeong, H.

H. Jeong, H. J. Jeong, H. M. Oh, C.-H. Hong, E.-K. Suh, G. Lerondel, and M. S. Jeong, “Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes,” Sci. Rep. 5(1), 9373 (2015).
[Crossref] [PubMed]

Jeong, H. J.

H. Jeong, H. J. Jeong, H. M. Oh, C.-H. Hong, E.-K. Suh, G. Lerondel, and M. S. Jeong, “Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes,” Sci. Rep. 5(1), 9373 (2015).
[Crossref] [PubMed]

Jeong, M. S.

H. Jeong, H. J. Jeong, H. M. Oh, C.-H. Hong, E.-K. Suh, G. Lerondel, and M. S. Jeong, “Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes,” Sci. Rep. 5(1), 9373 (2015).
[Crossref] [PubMed]

Johnston, D. C.

D. C. Johnston, “Stretched exponential relaxation arising from a continuous sum of exponential decays,” Phys. Rev. B 74(18), 184430 (2006).
[Crossref]

Kalincev, D.

T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter, “Room temperature excitonic recombination in GaInN/GaN quantum wells,” Appl. Phys. Lett. 103(20), 202106 (2013).
[Crossref]

Kalliakos, S.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Kang, J.

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

Kappers, M. J.

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
[Crossref]

Karpov, S.

S. Karpov, “ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review,” Opt. Quantum Electron. 47(6), 1293–1303 (2015).
[Crossref]

Kawakami, Y.

Y. Iwata, R. G. Banal, S. Ichikawa, M. Funato, and Y. Kawakami, “Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy,” J. Appl. Phys. 117(7), 075701 (2015).
[Crossref]

Kitamura, T.

S. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

Koch, M.

T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter, “Room temperature excitonic recombination in GaInN/GaN quantum wells,” Appl. Phys. Lett. 103(20), 202106 (2013).
[Crossref]

Kuo, H.-C.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Langer, T.

T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter, “Room temperature excitonic recombination in GaInN/GaN quantum wells,” Appl. Phys. Lett. 103(20), 202106 (2013).
[Crossref]

Lee, C.-K.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Lee, Y.-C.

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

Lefebvre, P.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Lekhal, K.

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

Lerondel, G.

H. Jeong, H. J. Jeong, H. M. Oh, C.-H. Hong, E.-K. Suh, G. Lerondel, and M. S. Jeong, “Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes,” Sci. Rep. 5(1), 9373 (2015).
[Crossref] [PubMed]

Li, H.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

Li, Z.

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

Lin, G.-R.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Lin, Y.-H.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Liu, Z.

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

Lorenz, K.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Lourenço, M. B.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Lu, Z.

H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6(6), 065013 (2016).
[Crossref]

Luo, Y.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization,” Appl. Phys. Lett. 97(20), 201112 (2010).
[Crossref]

Mierry, P. D.

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

Minsky, M. S.

M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
[Crossref]

Monteiro, T.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Morel, A.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Nakamura, S.

S. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

Ngo, T. H.

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

O’Donnell, K. P.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Oh, H. M.

H. Jeong, H. J. Jeong, H. M. Oh, C.-H. Hong, E.-K. Suh, G. Lerondel, and M. S. Jeong, “Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes,” Sci. Rep. 5(1), 9373 (2015).
[Crossref] [PubMed]

Okumura, H.

S. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

Oliver, R. A.

T. J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R. A. Oliver, and A. J. Shields, “Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures,” Appl. Phys. Lett. 109(15), 151110 (2016).
[Crossref]

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

Onuma, T.

S. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

Pristovsek, M.

T. J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R. A. Oliver, and A. J. Shields, “Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures,” Appl. Phys. Lett. 109(15), 151110 (2016).
[Crossref]

Redondo-Cubero, A.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Rodrigues, J.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Rossow, U.

T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter, “Room temperature excitonic recombination in GaInN/GaN quantum wells,” Appl. Phys. Lett. 103(20), 202106 (2013).
[Crossref]

Schulz, S.

P. Dawson, S. Schulz, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells,” J. Appl. Phys. 119(18), 181505 (2016).
[Crossref]

Sedrine, N. B.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Shields, A. J.

T. J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R. A. Oliver, and A. J. Shields, “Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures,” Appl. Phys. Lett. 109(15), 151110 (2016).
[Crossref]

Shih, M.-H.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Smeeton, T. M.

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
[Crossref]

Soltani-Vala, A.

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
[Crossref]

Sota, T.

S. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells,” J. Appl. Phys. 93(4), 2051–2054 (2003).
[Crossref]

Sousa, M. A.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Suh, E.-K.

H. Jeong, H. J. Jeong, H. M. Oh, C.-H. Hong, E.-K. Suh, G. Lerondel, and M. S. Jeong, “Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes,” Sci. Rep. 5(1), 9373 (2015).
[Crossref] [PubMed]

Sun, C.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

Taliercio, T.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Thrush, E. J.

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and microstructural studies of InGaN/GaN single-quantum-well structures,” J. Appl. Phys. 97(10), 103508 (2005).
[Crossref]

Tzou, A.-J.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Valvin, P.

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. D. Mierry, “Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures,” Appl. Phys. Lett. 107(12), 122103 (2015).
[Crossref]

Wang, B. W.

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

Wang, G.

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

Wang, J.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization,” Appl. Phys. Lett. 97(20), 201112 (2010).
[Crossref]

Wang, L.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization,” Appl. Phys. Lett. 97(20), 201112 (2010).
[Crossref]

Wang, Z.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

Watanabe, S.

M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
[Crossref]

Weng, Y. H.

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

Wetzel, C.

M. A. Sousa, T. C. Esteves, N. B. Sedrine, J. Rodrigues, M. B. Lourenço, A. Redondo-Cubero, E. Alves, K. P. O’Donnell, M. Bockowski, C. Wetzel, M. R. Correia, K. Lorenz, and T. Monteiro, “Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen,” Sci. Rep. 5(1), 9703 (2015).
[Crossref] [PubMed]

Wu, C.-I.

C.-H. Cheng, A.-J. Tzou, J.-H. Chang, Y.-C. Chi, Y.-H. Lin, M.-H. Shih, C.-K. Lee, C.-I. Wu, H.-C. Kuo, C.-Y. Chang, and G.-R. Lin, “Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions,” Sci. Rep. 6(1), 19757 (2016).
[Crossref] [PubMed]

Xing, Y.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

Xiong, B.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

Yamada, N.

M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
[Crossref]

Yang, D.

Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, and H. Li, “A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures,” Sci. Rep. 7, 45082 (2017).
[Crossref] [PubMed]

Yi, X.

Z. Li, J. Kang, B. W. Wang, H. Li, Y. H. Weng, Y.-C. Lee, Z. Liu, X. Yi, Z. C. Feng, and G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” J. Appl. Phys. 115(8), 083112 (2014).
[Crossref]

Zhao, W.

J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, “Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization,” Appl. Phys. Lett. 97(20), 201112 (2010).
[Crossref]

Zhao, Y.

H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6(6), 065013 (2016).
[Crossref]

Zhu, T.

T. J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R. A. Oliver, and A. J. Shields, “Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures,” Appl. Phys. Lett. 109(15), 151110 (2016).
[Crossref]

AIP Adv. (1)

H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6(6), 065013 (2016).
[Crossref]

Appl. Phys. Lett. (4)

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Figures (3)

Fig. 1
Fig. 1 (a) SSPL spectra for InGaN/GaN MQW LEDs on SixC1-x/SiO2/Si with different C/Si ratio excited by a 375-nm laser and tested at 13 K. (b). Evolution of SSPL spectrum with temperature for InGaN/GaN MQW LEDs on stoichiometric SiC buffer. (c). Evolution of TRPL spectrum with temperature for InGaN/GaN MQW LEDs on stoichiometric SiC buffer. The detected photon energy was kept at each maximum that shown in (b). (d) Single-exponential decay fitting for Stoichiometric SiC sample at 13K and 300K.
Fig. 2
Fig. 2 (a) Average PL lifetimes τ, (b) total recombination rates, and (c) relative PL efficiencies for InGaN/GaN MQW LEDs on SixC1-x/SiO2/Si with different C/Si ratio, in which τ was defined as the time period during which the PL intensity reduced from beginning to 1/e of initial, k=1/τ and  η=I(T)/ I 0 obtained from SSPL. (d) Demonstration of total recombination rate k, radiative recombination k r and nonradiative recombination k nr for MQW sample on C-rich SiC buffer, in which k=  k r + k nr .
Fig. 3
Fig. 3 (a) Radiative recombination k r and (b) nonradiative recombination k nr for InGaN/GaN MQW LEDs on SixC1-x/SiO2/Si with different C/Si ratio.

Equations (1)

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η= k r /( k r + k nr )= k r /k.

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