Abstract

In-plane anisotropic two dimensional (2D) layered materials, such as ReS2, offer one more degree of freedom than isotropic 2D materials to deliver various physical properties. Optical properties of ReS2 flakes are dependent on the layer number (N) from monolayer to multilayer. Here, taking ReS2 flakes with an anisotropic-like (AI) stacking order as an example, we probed their optical properties by optical contrast (OC) measurements. The N-dependent and angular-dependent characteristics of ReS2 flakes were demonstrated respectively by unpolarized and polarized OC curves. The results facilitate further study on out-of-plane and in-plane complex refraction index properties of ReS2 flakes.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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  21. X. L. Li, W. P. Han, J. B. Wu, X. F. Qiao, J. Zhang, and P. H. Tan, “Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination,” Adv. Funct. Mater. 27(19), 1604468 (2017).
    [Crossref]
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2017 (4)

M. Rahman, K. Davey, and S. Z. Qiao, “Advent of 2D Rhenium Disulfide (ReS2): Fundamentals to Applications,” Adv. Funct. Mater. 27(10), 1606129 (2017).
[Crossref]

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

H. Yang, H. Jussila, A. Autere, H. P. Komsa, G. J. Ye, X. H. Chen, T. Hasan, and Z. P. Sun, “Optical Waveplates Based on Birefringence of Anisotropic Two-Dimensional Layered Materials,” ACS Photonics 4(12), 3023–3030 (2017).
[Crossref]

X. L. Li, W. P. Han, J. B. Wu, X. F. Qiao, J. Zhang, and P. H. Tan, “Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination,” Adv. Funct. Mater. 27(19), 1604468 (2017).
[Crossref]

2016 (3)

X. F. Qiao, J. B. Wu, L. Zhou, J. Qiao, W. Shi, T. Chen, X. Zhang, J. Zhang, W. Ji, and P. H. Tan, “Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.,” Nanoscale 8(15), 8324–8332 (2016).
[Crossref] [PubMed]

E. Lorchat, G. Froehlicher, and S. Berciaud, “Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2,” ACS Nano 10(2), 2752–2760 (2016).
[Crossref] [PubMed]

R. He, J. A. Yan, Z. Yin, Z. Ye, G. Ye, J. Cheng, J. Li, and C. H. Lui, “Coupling and Stacking Order of ReS2 Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy,” Nano Lett. 16(2), 1404–1409 (2016).
[Crossref] [PubMed]

2015 (3)

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

H. Zeng and X. Cui, “An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides,” Chem. Soc. Rev. 44(9), 2629–2642 (2015).
[Crossref] [PubMed]

D. A. Chenet, O. B. Aslan, P. Y. Huang, C. Fan, A. M. van der Zande, T. F. Heinz, and J. C. Hone, “In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy,” Nano Lett. 15(9), 5667–5672 (2015).
[Crossref] [PubMed]

2014 (1)

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

2013 (3)

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P. H. Tan, and G. Eda, “Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5(4), 263–275 (2013).
[Crossref] [PubMed]

W. P. Han, Y. M. Shi, X. L. Li, S. Q. Luo, Y. Lu, and P. H. Tan, “The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of two-dimensional atomic crystals: A case of graphene multilayers,” Wuli Xuebao 62(11), 110702 (2013).

2012 (2)

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

P. H. Tan, W. P. Han, W. J. Zhao, Z. H. Wu, K. Chang, H. Wang, Y. F. Wang, N. Bonini, N. Marzari, N. Pugno, G. Savini, A. Lombardo, and A. C. Ferrari, “The shear mode of multilayer graphene,” Nat. Mater. 11(4), 294–300 (2012).
[Crossref] [PubMed]

2011 (1)

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref] [PubMed]

2010 (1)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

2009 (1)

X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, “Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes,” Nano Lett. 9(12), 4359–4363 (2009).
[Crossref] [PubMed]

2007 (2)

Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
[Crossref] [PubMed]

C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref] [PubMed]

Aloni, S.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Arora, A.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Aslan, O. B.

D. A. Chenet, O. B. Aslan, P. Y. Huang, C. Fan, A. M. van der Zande, T. F. Heinz, and J. C. Hone, “In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy,” Nano Lett. 15(9), 5667–5672 (2015).
[Crossref] [PubMed]

Autere, A.

H. Yang, H. Jussila, A. Autere, H. P. Komsa, G. J. Ye, X. H. Chen, T. Hasan, and Z. P. Sun, “Optical Waveplates Based on Birefringence of Anisotropic Two-Dimensional Layered Materials,” ACS Photonics 4(12), 3023–3030 (2017).
[Crossref]

Berciaud, S.

E. Lorchat, G. Froehlicher, and S. Berciaud, “Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2,” ACS Nano 10(2), 2752–2760 (2016).
[Crossref] [PubMed]

Bhattacharya, A.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Bonini, N.

P. H. Tan, W. P. Han, W. J. Zhao, Z. H. Wu, K. Chang, H. Wang, Y. F. Wang, N. Bonini, N. Marzari, N. Pugno, G. Savini, A. Lombardo, and A. C. Ferrari, “The shear mode of multilayer graphene,” Nat. Mater. 11(4), 294–300 (2012).
[Crossref] [PubMed]

Borysiak, M.

X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, “Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes,” Nano Lett. 9(12), 4359–4363 (2009).
[Crossref] [PubMed]

Bratschitsch, R.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Brivio, J.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref] [PubMed]

Cai, W.

X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, “Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes,” Nano Lett. 9(12), 4359–4363 (2009).
[Crossref] [PubMed]

Cao, Z.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

Casiraghi, C.

C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref] [PubMed]

Chang, K.

P. H. Tan, W. P. Han, W. J. Zhao, Z. H. Wu, K. Chang, H. Wang, Y. F. Wang, N. Bonini, N. Marzari, N. Pugno, G. Savini, A. Lombardo, and A. C. Ferrari, “The shear mode of multilayer graphene,” Nat. Mater. 11(4), 294–300 (2012).
[Crossref] [PubMed]

Chen, D.

X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, “Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes,” Nano Lett. 9(12), 4359–4363 (2009).
[Crossref] [PubMed]

Chen, T.

X. F. Qiao, J. B. Wu, L. Zhou, J. Qiao, W. Shi, T. Chen, X. Zhang, J. Zhang, W. Ji, and P. H. Tan, “Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.,” Nanoscale 8(15), 8324–8332 (2016).
[Crossref] [PubMed]

Chen, X. H.

H. Yang, H. Jussila, A. Autere, H. P. Komsa, G. J. Ye, X. H. Chen, T. Hasan, and Z. P. Sun, “Optical Waveplates Based on Birefringence of Anisotropic Two-Dimensional Layered Materials,” ACS Photonics 4(12), 3023–3030 (2017).
[Crossref]

Chenet, D. A.

D. A. Chenet, O. B. Aslan, P. Y. Huang, C. Fan, A. M. van der Zande, T. F. Heinz, and J. C. Hone, “In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy,” Nano Lett. 15(9), 5667–5672 (2015).
[Crossref] [PubMed]

Cheng, J.

R. He, J. A. Yan, Z. Yin, Z. Ye, G. Ye, J. Cheng, J. Li, and C. H. Lui, “Coupling and Stacking Order of ReS2 Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy,” Nano Lett. 16(2), 1404–1409 (2016).
[Crossref] [PubMed]

Chhowalla, M.

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5(4), 263–275 (2013).
[Crossref] [PubMed]

Chu, L.

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P. H. Tan, and G. Eda, “Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

Coleman, J. N.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Colombo, L.

X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, “Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes,” Nano Lett. 9(12), 4359–4363 (2009).
[Crossref] [PubMed]

Cui, X.

H. Zeng and X. Cui, “An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides,” Chem. Soc. Rev. 44(9), 2629–2642 (2015).
[Crossref] [PubMed]

Cui, Y.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

Davey, K.

M. Rahman, K. Davey, and S. Z. Qiao, “Advent of 2D Rhenium Disulfide (ReS2): Fundamentals to Applications,” Adv. Funct. Mater. 27(10), 1606129 (2017).
[Crossref]

Deilmann, T.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Del Pozo-Zamudio, O.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Drüppel, M.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Eda, G.

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5(4), 263–275 (2013).
[Crossref] [PubMed]

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P. H. Tan, and G. Eda, “Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

Fan, C.

D. A. Chenet, O. B. Aslan, P. Y. Huang, C. Fan, A. M. van der Zande, T. F. Heinz, and J. C. Hone, “In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy,” Nano Lett. 15(9), 5667–5672 (2015).
[Crossref] [PubMed]

Fan, H. M.

Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
[Crossref] [PubMed]

Fan, W.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Feng, Y.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

Feng, Y. P.

Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
[Crossref] [PubMed]

Ferrari, A. C.

P. H. Tan, W. P. Han, W. J. Zhao, Z. H. Wu, K. Chang, H. Wang, Y. F. Wang, N. Bonini, N. Marzari, N. Pugno, G. Savini, A. Lombardo, and A. C. Ferrari, “The shear mode of multilayer graphene,” Nat. Mater. 11(4), 294–300 (2012).
[Crossref] [PubMed]

C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref] [PubMed]

Froehlicher, G.

E. Lorchat, G. Froehlicher, and S. Berciaud, “Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2,” ACS Nano 10(2), 2752–2760 (2016).
[Crossref] [PubMed]

Fu, Y.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

Ghorannevis, Z.

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P. H. Tan, and G. Eda, “Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

Giacometti, V.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref] [PubMed]

Gokus, T.

C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref] [PubMed]

Han, B.

X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, “Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes,” Nano Lett. 9(12), 4359–4363 (2009).
[Crossref] [PubMed]

Han, W. P.

X. L. Li, W. P. Han, J. B. Wu, X. F. Qiao, J. Zhang, and P. H. Tan, “Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination,” Adv. Funct. Mater. 27(19), 1604468 (2017).
[Crossref]

W. P. Han, Y. M. Shi, X. L. Li, S. Q. Luo, Y. Lu, and P. H. Tan, “The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of two-dimensional atomic crystals: A case of graphene multilayers,” Wuli Xuebao 62(11), 110702 (2013).

P. H. Tan, W. P. Han, W. J. Zhao, Z. H. Wu, K. Chang, H. Wang, Y. F. Wang, N. Bonini, N. Marzari, N. Pugno, G. Savini, A. Lombardo, and A. C. Ferrari, “The shear mode of multilayer graphene,” Nat. Mater. 11(4), 294–300 (2012).
[Crossref] [PubMed]

Hartschuh, A.

C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref] [PubMed]

Harutyunyan, H.

C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref] [PubMed]

Hasan, T.

H. Yang, H. Jussila, A. Autere, H. P. Komsa, G. J. Ye, X. H. Chen, T. Hasan, and Z. P. Sun, “Optical Waveplates Based on Birefringence of Anisotropic Two-Dimensional Layered Materials,” ACS Photonics 4(12), 3023–3030 (2017).
[Crossref]

He, R.

R. He, J. A. Yan, Z. Yin, Z. Ye, G. Ye, J. Cheng, J. Li, and C. H. Lui, “Coupling and Stacking Order of ReS2 Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy,” Nano Lett. 16(2), 1404–1409 (2016).
[Crossref] [PubMed]

Heinz, T. F.

D. A. Chenet, O. B. Aslan, P. Y. Huang, C. Fan, A. M. van der Zande, T. F. Heinz, and J. C. Hone, “In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy,” Nano Lett. 15(9), 5667–5672 (2015).
[Crossref] [PubMed]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Ho, C. H.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Hone, J.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Hone, J. C.

D. A. Chenet, O. B. Aslan, P. Y. Huang, C. Fan, A. M. van der Zande, T. F. Heinz, and J. C. Hone, “In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy,” Nano Lett. 15(9), 5667–5672 (2015).
[Crossref] [PubMed]

Huang, P. Y.

D. A. Chenet, O. B. Aslan, P. Y. Huang, C. Fan, A. M. van der Zande, T. F. Heinz, and J. C. Hone, “In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy,” Nano Lett. 15(9), 5667–5672 (2015).
[Crossref] [PubMed]

Huang, Y. S.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Hwang, H. Y.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

Jariwala, B.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Ji, J.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Ji, W.

X. F. Qiao, J. B. Wu, L. Zhou, J. Qiao, W. Shi, T. Chen, X. Zhang, J. Zhang, W. Ji, and P. H. Tan, “Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.,” Nanoscale 8(15), 8324–8332 (2016).
[Crossref] [PubMed]

Jussila, H.

H. Yang, H. Jussila, A. Autere, H. P. Komsa, G. J. Ye, X. H. Chen, T. Hasan, and Z. P. Sun, “Optical Waveplates Based on Birefringence of Anisotropic Two-Dimensional Layered Materials,” ACS Photonics 4(12), 3023–3030 (2017).
[Crossref]

Kalantar-Zadeh, K.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Kasim, J.

Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
[Crossref] [PubMed]

Kis, A.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref] [PubMed]

Kloc, C.

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P. H. Tan, and G. Eda, “Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

Ko, C.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Komsa, H. P.

H. Yang, H. Jussila, A. Autere, H. P. Komsa, G. J. Ye, X. H. Chen, T. Hasan, and Z. P. Sun, “Optical Waveplates Based on Birefringence of Anisotropic Two-Dimensional Layered Materials,” ACS Photonics 4(12), 3023–3030 (2017).
[Crossref]

Krüger, P.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Lee, C.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Li, A.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

Li, J.

R. He, J. A. Yan, Z. Yin, Z. Ye, G. Ye, J. Cheng, J. Li, and C. H. Lui, “Coupling and Stacking Order of ReS2 Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy,” Nano Lett. 16(2), 1404–1409 (2016).
[Crossref] [PubMed]

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Li, L. J.

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5(4), 263–275 (2013).
[Crossref] [PubMed]

Li, S.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Li, X.

X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, “Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes,” Nano Lett. 9(12), 4359–4363 (2009).
[Crossref] [PubMed]

Li, X. L.

X. L. Li, W. P. Han, J. B. Wu, X. F. Qiao, J. Zhang, and P. H. Tan, “Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination,” Adv. Funct. Mater. 27(19), 1604468 (2017).
[Crossref]

W. P. Han, Y. M. Shi, X. L. Li, S. Q. Luo, Y. Lu, and P. H. Tan, “The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of two-dimensional atomic crystals: A case of graphene multilayers,” Wuli Xuebao 62(11), 110702 (2013).

Lidorikis, E.

C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref] [PubMed]

Liu, E.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

Liu, H.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

Liu, K.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Loh, K. P.

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5(4), 263–275 (2013).
[Crossref] [PubMed]

Lombardo, A.

P. H. Tan, W. P. Han, W. J. Zhao, Z. H. Wu, K. Chang, H. Wang, Y. F. Wang, N. Bonini, N. Marzari, N. Pugno, G. Savini, A. Lombardo, and A. C. Ferrari, “The shear mode of multilayer graphene,” Nat. Mater. 11(4), 294–300 (2012).
[Crossref] [PubMed]

Lorchat, E.

E. Lorchat, G. Froehlicher, and S. Berciaud, “Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2,” ACS Nano 10(2), 2752–2760 (2016).
[Crossref] [PubMed]

Lu, Y.

W. P. Han, Y. M. Shi, X. L. Li, S. Q. Luo, Y. Lu, and P. H. Tan, “The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of two-dimensional atomic crystals: A case of graphene multilayers,” Wuli Xuebao 62(11), 110702 (2013).

Luce, A.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Lui, C. H.

R. He, J. A. Yan, Z. Yin, Z. Ye, G. Ye, J. Cheng, J. Li, and C. H. Lui, “Coupling and Stacking Order of ReS2 Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy,” Nano Lett. 16(2), 1404–1409 (2016).
[Crossref] [PubMed]

Luo, S. Q.

W. P. Han, Y. M. Shi, X. L. Li, S. Q. Luo, Y. Lu, and P. H. Tan, “The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of two-dimensional atomic crystals: A case of graphene multilayers,” Wuli Xuebao 62(11), 110702 (2013).

Mak, K. F.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Marzari, N.

P. H. Tan, W. P. Han, W. J. Zhao, Z. H. Wu, K. Chang, H. Wang, Y. F. Wang, N. Bonini, N. Marzari, N. Pugno, G. Savini, A. Lombardo, and A. C. Ferrari, “The shear mode of multilayer graphene,” Nat. Mater. 11(4), 294–300 (2012).
[Crossref] [PubMed]

Miao, F.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

Michaelis de Vasconcellos, S.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Ni, Z. H.

Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
[Crossref] [PubMed]

Noky, J.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Novoselov, K. S.

C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref] [PubMed]

Ogletree, D. F.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Peeters, F. M.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Piner, R. D.

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X. F. Qiao, J. B. Wu, L. Zhou, J. Qiao, W. Shi, T. Chen, X. Zhang, J. Zhang, W. Ji, and P. H. Tan, “Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.,” Nanoscale 8(15), 8324–8332 (2016).
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W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P. H. Tan, and G. Eda, “Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2,” ACS Nano 7(1), 791–797 (2013).
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W. P. Han, Y. M. Shi, X. L. Li, S. Q. Luo, Y. Lu, and P. H. Tan, “The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of two-dimensional atomic crystals: A case of graphene multilayers,” Wuli Xuebao 62(11), 110702 (2013).

P. H. Tan, W. P. Han, W. J. Zhao, Z. H. Wu, K. Chang, H. Wang, Y. F. Wang, N. Bonini, N. Marzari, N. Pugno, G. Savini, A. Lombardo, and A. C. Ferrari, “The shear mode of multilayer graphene,” Nat. Mater. 11(4), 294–300 (2012).
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Toh, M.

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P. H. Tan, and G. Eda, “Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2,” ACS Nano 7(1), 791–797 (2013).
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Tongay, S.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
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Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
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S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
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X. L. Li, W. P. Han, J. B. Wu, X. F. Qiao, J. Zhang, and P. H. Tan, “Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination,” Adv. Funct. Mater. 27(19), 1604468 (2017).
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Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
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Yan, J.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
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H. Yang, H. Jussila, A. Autere, H. P. Komsa, G. J. Ye, X. H. Chen, T. Hasan, and Z. P. Sun, “Optical Waveplates Based on Birefringence of Anisotropic Two-Dimensional Layered Materials,” ACS Photonics 4(12), 3023–3030 (2017).
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Ye, G.

R. He, J. A. Yan, Z. Yin, Z. Ye, G. Ye, J. Cheng, J. Li, and C. H. Lui, “Coupling and Stacking Order of ReS2 Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy,” Nano Lett. 16(2), 1404–1409 (2016).
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H. Yang, H. Jussila, A. Autere, H. P. Komsa, G. J. Ye, X. H. Chen, T. Hasan, and Z. P. Sun, “Optical Waveplates Based on Birefringence of Anisotropic Two-Dimensional Layered Materials,” ACS Photonics 4(12), 3023–3030 (2017).
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R. He, J. A. Yan, Z. Yin, Z. Ye, G. Ye, J. Cheng, J. Li, and C. H. Lui, “Coupling and Stacking Order of ReS2 Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy,” Nano Lett. 16(2), 1404–1409 (2016).
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Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
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Zhang, H.

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5(4), 263–275 (2013).
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Zhang, J.

X. L. Li, W. P. Han, J. B. Wu, X. F. Qiao, J. Zhang, and P. H. Tan, “Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination,” Adv. Funct. Mater. 27(19), 1604468 (2017).
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X. F. Qiao, J. B. Wu, L. Zhou, J. Qiao, W. Shi, T. Chen, X. Zhang, J. Zhang, W. Ji, and P. H. Tan, “Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.,” Nanoscale 8(15), 8324–8332 (2016).
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Zhang, X.

X. F. Qiao, J. B. Wu, L. Zhou, J. Qiao, W. Shi, T. Chen, X. Zhang, J. Zhang, W. Ji, and P. H. Tan, “Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.,” Nanoscale 8(15), 8324–8332 (2016).
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Zhao, W.

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P. H. Tan, and G. Eda, “Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

Zhao, W. J.

P. H. Tan, W. P. Han, W. J. Zhao, Z. H. Wu, K. Chang, H. Wang, Y. F. Wang, N. Bonini, N. Marzari, N. Pugno, G. Savini, A. Lombardo, and A. C. Ferrari, “The shear mode of multilayer graphene,” Nat. Mater. 11(4), 294–300 (2012).
[Crossref] [PubMed]

Zhou, J.

S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, and J. Wu, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling,” Nat. Commun. 5, 3252 (2014).
[Crossref] [PubMed]

Zhou, L.

X. F. Qiao, J. B. Wu, L. Zhou, J. Qiao, W. Shi, T. Chen, X. Zhang, J. Zhang, W. Ji, and P. H. Tan, “Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.,” Nanoscale 8(15), 8324–8332 (2016).
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Zhou, W.

E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing, “Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors,” Nat. Commun. 6(1), 6991 (2015).
[Crossref] [PubMed]

Zhu, Y.

X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, “Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes,” Nano Lett. 9(12), 4359–4363 (2009).
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ACS Nano (2)

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P. H. Tan, and G. Eda, “Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2,” ACS Nano 7(1), 791–797 (2013).
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ACS Photonics (1)

H. Yang, H. Jussila, A. Autere, H. P. Komsa, G. J. Ye, X. H. Chen, T. Hasan, and Z. P. Sun, “Optical Waveplates Based on Birefringence of Anisotropic Two-Dimensional Layered Materials,” ACS Photonics 4(12), 3023–3030 (2017).
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Figures (5)

Fig. 1
Fig. 1 (a) Optical image of AI-stacked ReS2 flakes contained 1L-7L on SiO2/Si substrates and (b) schematic diagram of the microscope system to measure reflection spectra.
Fig. 2
Fig. 2 (a) The unpolarized OC curves of 1L-7L ReS2 flakes supported on SiO2/Si substrate. The inset shows those of 1L-3L ReS2 flakes. (b) The peak and valley positions of the unpolarized OC curves are summarized by black triangles and blue circles, respectively.
Fig. 3
Fig. 3 (a) A series of polarized OC curves of the 2L-ReS2 flake supported on SiO2/Si substrate with varying polarization angles from 0° to 180°. The curves are offset for clarity. (b) The polar plots of the intensities at 610 nm and 438 nm of the polarized OC curves are shown by black and red dots, respectively. (c) Schematic diagram of polarization directions with the smallest and largest OC, in which the sample placement is marked.
Fig. 4
Fig. 4 (a) Schematic diagram of transmission process of electric field components in the Air/NL-ReS2/SiO2/Si structure. (b) The OC curves of 2L-ReS2 flake at the polarization angle of 40° and 130°. The inset shows schematic diagram of the s-polarization and p-polarization of electric field components.
Fig. 5
Fig. 5 (a) Low-frequency Raman spectra of the S and B modes for AI-stacked 1L-7L ReS2. (b) Frequencies of S and B modes as a function of N for AI-stacked 1L-7L ReS2. The lines are the theoretical data based on LCM [14]. The blue open squares, green open circles and red open circles are the experiment data.

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