Abstract

Lateral heterojunction (HJ) of two-dimensional transition metal dichalcogenides has various optoelectronic applications that utilize in-plane charge separation. However, it has been difficult to identify charge transfer characteristics at HJ due to the limited spatial resolution of optical spectroscopy. In this study, near-field scanning optical microscopy is used to directly image the exciton separation occurring at the lateral MoSe2/WSe2 HJ, which was found to be ∼370 nm in spatial width. Efficient charge separation at HJ was confirmed by inspecting local variations of trion and exciton emissions of MoSe2 and WSe2.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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2018 (5)

K. W. Lau, Calvin, Z. Gong, H. Yu, and W. Yao, “Interface excitons at lateral heterojunctions in monolayer semiconductors,” Phys. Rev. B 98(11), 115427 (2018).
[Crossref]

Y. Kim, Y. Lee, H. Kim, S. Roy, and J. Kim, “Near-field exciton imaging of chemically treated MoS2 monolayers,” Nanoscale 10(18), 8851–8858 (2018).
[Crossref]

K.-D. Park, T. Jiang, G. Clark, X. Xu, and M. B. Raschke, “Radiative control of dark excitons at room temperature by nano-optical antenna-tip Purcell effect,” Nat. Nanotechnol. 13(1), 59–64 (2018).
[Crossref]

W. Xue, P. K. Sahoo, J. Liu, H. Zong, X. Lai, S. Ambardar, and D. V. Voronine, “Nano-optical imaging of monolayer MoSe2-WSe2 lateral heterostructure with subwavelength domains,” J. Vac. Sci. Technol., A 36(5), 05G502 (2018).
[Crossref]

C. Tang, Z. He, W. Chen, S. Jia, J. Lou, and D. V. Voronine, “Quantum plasmonic hot-electron injection in lateral WSe2/MoSe2 heterostructures,” Phys. Rev. B 98(4), 041402 (2018).
[Crossref]

2017 (5)

H. Kim, G. H. Han, S. J. Yun, J. Zhao, D. H. Keum, H. Y. Jeong, T. H. Ly, Y. Jin, J.-H. Park, B. H. Moon, S.-W. Kim, and Y. H. Lee, “Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides,” Nanotechnology 28(36), 36LT01 (2017).
[Crossref]

Y. Lee, S. J. Yun, Y. Kim, M. S. Kim, G. H. Han, A. K. Sood, and J. Kim, “Near-field spectral mapping of individual exciton complexes of monolayer WS2 correlated with local defects and charge population,” Nanoscale 9(6), 2272–2278 (2017).
[Crossref]

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref]

F. Ullah, Y. Sim, C. T. Le, M.-J. Seong, J. I. Jang, S. H. Rhim, B. C. Tran Khac, K.-H. Chung, K. Park, Y. Lee, K. Kim, H. Y. Jeong, and Y. S. Kim, “Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure,” ACS Nano 11(9), 8822–8829 (2017).
[Crossref]

W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li, and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2,” Nat. Commun. 8(1), 929 (2017).
[Crossref]

2016 (8)

K.-D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid Tip-Enhanced Nanospectroscopy and Nanoimaging of Monolayer WSe2 with Local Strain Control,” Nano Lett. 16(4), 2621–2627 (2016).
[Crossref]

M. S. Kim, C. Seo, H. Kim, J. Lee, D. H. Luong, J.-H. Park, G. H. Han, and J. Kim, “Simultaneous Hosting of Positive and Negative Trions and the Enhanced Direct Band Emission in MoSe2/MoS2 Heterostacked Multilayers,” ACS Nano 10(6), 6211–6219 (2016).
[Crossref]

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
[Crossref]

H.-V. Han, A.-Y. Lu, L.-S. Lu, J.-K. Huang, H. Li, C.-L. Hsu, Y.-C. Lin, M.-H. Chiu, K. Suenaga, C.-W. Chu, H.-C. Kuo, W.-H. Chang, L.-J. Li, and Y. Shi, “Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment,” ACS Nano 10(1), 1454–1461 (2016).
[Crossref]

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref]

M. S. Kim, S. J. Yun, Y. Lee, C. Seo, G. H. Han, K. K. Kim, Y. H. Lee, and J. Kim, “Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers,” ACS Nano 10(2), 2399–2405 (2016).
[Crossref]

J. Huang, T. B. Hoang, and M. H. Mikkelsen, “Probing the origin of excitonic states in monolayer WSe2,” Sci. Rep. 6(1), 22414 (2016).
[Crossref]

S. Park, H. Kim, M. S. Kim, G. H. Han, and J. Kim, “Dependence of Raman and absorption spectra of stacked bilayer MoS2 on the stacking orientation,” Opt. Express 24(19), 21551–21559 (2016).
[Crossref]

2015 (4)

Y. Lee, S. Park, H. Kim, G. H. Han, Y. H. Lee, and J. Kim, “Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging,” Nanoscale 7(28), 11909–11914 (2015).
[Crossref]

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref]

M.-Y. Li, Y. Shi, C.-C. Cheng, L.-S. Lu, Y.-C. Lin, H.-L. Tang, M.-L. Tsai, C.-W. Chu, K.-H. Wei, J.-H. He, W.-H. Chang, K. Suenaga, and L.-J. Li, “Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface,” Science 349(6247), 524–528 (2015).
[Crossref]

J. Yuan, S. Najmaei, Z. Zhang, J. Zhang, S. Lei, P. M. Ajayan, B. I. Yakobson, and J. Lou, “Photoluminescence Quenching and Charge Transfer in Artificial Heterostacks of Monolayer Transition Metal Dichalcogenides and Few-Layer Black Phosphorus,” ACS Nano 9(1), 555–563 (2015).
[Crossref]

2014 (10)

Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J. Beng, S. T. Lou, Z. Pantelides, W. Liu, P. M. Zhou, and Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” Nat. Mater. 13(12), 1135–1142 (2014).
[Crossref]

C. Huang, S. Wu, A. M. Sanchez, J. J. P. Peters, R. Beanland, J. S. Ross, P. Rivera, W. Yao, D. H. Cobden, and X. Xu, “Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors,” Nat. Mater. 13(12), 1096–1101 (2014).
[Crossref]

G. W. Shim, K. Yoo, S.-B. Seo, J. Shin, D. Y. Jung, I.-S. Kang, C. W. Ahn, B. J. Cho, and S.-Y. Choi, “Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures,” ACS Nano 8(7), 6655–6662 (2014).
[Crossref]

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2,” Phys. Rev. Lett. 113(7), 076802 (2014).
[Crossref]

H. Nan, Z. Wang, W. Wang, Z. Liang, Y. Lu, Q. Chen, D. He, P. Tan, F. Miao, X. Wang, J. Wang, and Z. Ni, “Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding,” ACS Nano 8(6), 5738–5745 (2014).
[Crossref]

N. Peimyoo, W. Yang, J. Shang, X. Shen, Y. Wang, and T. Yu, “Chemically Driven Tunable Light Emission of Charged and Neutral Excitons in Monolayer WS2,” ACS Nano 8(11), 11320–11329 (2014).
[Crossref]

K. P. Dhakal, D. L. Duong, J. Lee, H. Nam, M. Kim, M. Kan, Y. H. Lee, and J. Kim, “Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2,” Nanoscale 6(21), 13028–13035 (2014).
[Crossref]

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref]

F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast Charge Separation and Indirect Exciton Formation in a MoS2–MoSe2 van der Waals Heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref]

T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photoluminescence properties and exciton dynamics in monolayer WSe2,” Appl. Phys. Lett. 105(10), 101901 (2014).
[Crossref]

2013 (8)

W. Zhao, Z. Ghorannevis, K. K. Amara, J. R. Pang, M. Toh, X. Zhang, C. Kloc, P. H. Tan, and G. Eda, “Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2,” Nanoscale 5(20), 9677–9683 (2013).
[Crossref]

P. Tonndorf, R. Schmidt, P. Böttger, X. Zhang, J. Börner, A. Liebig, M. Albrecht, C. Kloc, O. Gordan, D. R. T. Zahn, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2,” Opt. Express 21(4), 4908–4916 (2013).
[Crossref]

J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, “Band offsets and heterostructures of two-dimensional semiconductors,” Appl. Phys. Lett. 102(1), 012111 (2013).
[Crossref]

S. Mouri, Y. Miyauchi, and K. Matsuda, “Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping,” Nano Lett. 13(12), 5944–5948 (2013).
[Crossref]

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref]

K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and J. Shan, “Tightly bound trions in monolayer MoS2,” Nat. Mater. 12(3), 207–211 (2013).
[Crossref]

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
[Crossref]

D. A. Vithanage, A. Devižis, V. Abramavičius, Y. Infahsaeng, D. Abramavičius, R. C. I. MacKenzie, P. E. Keivanidis, A. Yartsev, D. Hertel, J. Nelson, V. Sundström, and V. Gulbinas, “Visualizing charge separation in bulk heterojunction organic solar cells,” Nat. Commun. 4(1), 2334 (2013).
[Crossref]

2012 (2)

M. P. Levendorf, C.-J. Kim, L. Brown, P. Y. Huang, R. W. Havener, D. A. Muller, and J. Park, “Graphene and boron nitride lateral heterostructures for atomically thin circuitry,” Nature 488(7413), 627–632 (2012).
[Crossref]

W. S. Yun, S. W. Han, S. C. Hong, I. G. Kim, and J. D. Lee, “Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te),” Phys. Rev. B 85(3), 033305 (2012).
[Crossref]

2011 (1)

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref]

2010 (2)

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging Photoluminescence in Monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref]

Abramavicius, D.

D. A. Vithanage, A. Devižis, V. Abramavičius, Y. Infahsaeng, D. Abramavičius, R. C. I. MacKenzie, P. E. Keivanidis, A. Yartsev, D. Hertel, J. Nelson, V. Sundström, and V. Gulbinas, “Visualizing charge separation in bulk heterojunction organic solar cells,” Nat. Commun. 4(1), 2334 (2013).
[Crossref]

Abramavicius, V.

D. A. Vithanage, A. Devižis, V. Abramavičius, Y. Infahsaeng, D. Abramavičius, R. C. I. MacKenzie, P. E. Keivanidis, A. Yartsev, D. Hertel, J. Nelson, V. Sundström, and V. Gulbinas, “Visualizing charge separation in bulk heterojunction organic solar cells,” Nat. Commun. 4(1), 2334 (2013).
[Crossref]

Addou, R.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref]

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref]

Ager, J. W.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref]

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref]

Ahn, C. W.

G. W. Shim, K. Yoo, S.-B. Seo, J. Shin, D. Y. Jung, I.-S. Kang, C. W. Ahn, B. J. Cho, and S.-Y. Choi, “Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures,” ACS Nano 8(7), 6655–6662 (2014).
[Crossref]

Ahn, G. H.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref]

Aivazian, G.

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
[Crossref]

Ajayan,

Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J. Beng, S. T. Lou, Z. Pantelides, W. Liu, P. M. Zhou, and Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” Nat. Mater. 13(12), 1135–1142 (2014).
[Crossref]

Ajayan, P. M.

J. Yuan, S. Najmaei, Z. Zhang, J. Zhang, S. Lei, P. M. Ajayan, B. I. Yakobson, and J. Lou, “Photoluminescence Quenching and Charge Transfer in Artificial Heterostacks of Monolayer Transition Metal Dichalcogenides and Few-Layer Black Phosphorus,” ACS Nano 9(1), 555–563 (2015).
[Crossref]

Albrecht, M.

Amani, M.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref]

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref]

Amara, K. K.

W. Zhao, Z. Ghorannevis, K. K. Amara, J. R. Pang, M. Toh, X. Zhang, C. Kloc, P. H. Tan, and G. Eda, “Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2,” Nanoscale 5(20), 9677–9683 (2013).
[Crossref]

Ambardar, S.

W. Xue, P. K. Sahoo, J. Liu, H. Zong, X. Lai, S. Ambardar, and D. V. Voronine, “Nano-optical imaging of monolayer MoSe2-WSe2 lateral heterostructure with subwavelength domains,” J. Vac. Sci. Technol., A 36(5), 05G502 (2018).
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Aslan, O. B.

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2,” Phys. Rev. Lett. 113(7), 076802 (2014).
[Crossref]

Ataca, C.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref]

Azcatl, A.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref]

Beanland, R.

C. Huang, S. Wu, A. M. Sanchez, J. J. P. Peters, R. Beanland, J. S. Ross, P. Rivera, W. Yao, D. H. Cobden, and X. Xu, “Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors,” Nat. Mater. 13(12), 1096–1101 (2014).
[Crossref]

Bellus, M. Z.

F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast Charge Separation and Indirect Exciton Formation in a MoS2–MoSe2 van der Waals Heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref]

Beng, J.

Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J. Beng, S. T. Lou, Z. Pantelides, W. Liu, P. M. Zhou, and Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” Nat. Mater. 13(12), 1135–1142 (2014).
[Crossref]

Berkelbach, T. C.

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2,” Phys. Rev. Lett. 113(7), 076802 (2014).
[Crossref]

Börner, J.

Böttger, P.

Bratschitsch, R.

Brivio, J.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref]

Brown, L.

M. P. Levendorf, C.-J. Kim, L. Brown, P. Y. Huang, R. W. Havener, D. A. Muller, and J. Park, “Graphene and boron nitride lateral heterostructures for atomically thin circuitry,” Nature 488(7413), 627–632 (2012).
[Crossref]

Calvin,

K. W. Lau, Calvin, Z. Gong, H. Yu, and W. Yao, “Interface excitons at lateral heterojunctions in monolayer semiconductors,” Phys. Rev. B 98(11), 115427 (2018).
[Crossref]

Ceballos, F.

F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast Charge Separation and Indirect Exciton Formation in a MoS2–MoSe2 van der Waals Heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref]

Chang, T.-R.

W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li, and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2,” Nat. Commun. 8(1), 929 (2017).
[Crossref]

Chang, W.-H.

W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li, and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2,” Nat. Commun. 8(1), 929 (2017).
[Crossref]

H.-V. Han, A.-Y. Lu, L.-S. Lu, J.-K. Huang, H. Li, C.-L. Hsu, Y.-C. Lin, M.-H. Chiu, K. Suenaga, C.-W. Chu, H.-C. Kuo, W.-H. Chang, L.-J. Li, and Y. Shi, “Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment,” ACS Nano 10(1), 1454–1461 (2016).
[Crossref]

M.-Y. Li, Y. Shi, C.-C. Cheng, L.-S. Lu, Y.-C. Lin, H.-L. Tang, M.-L. Tsai, C.-W. Chu, K.-H. Wei, J.-H. He, W.-H. Chang, K. Suenaga, and L.-J. Li, “Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface,” Science 349(6247), 524–528 (2015).
[Crossref]

Chen, Q.

H. Nan, Z. Wang, W. Wang, Z. Liang, Y. Lu, Q. Chen, D. He, P. Tan, F. Miao, X. Wang, J. Wang, and Z. Ni, “Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding,” ACS Nano 8(6), 5738–5745 (2014).
[Crossref]

Chen, W.

C. Tang, Z. He, W. Chen, S. Jia, J. Lou, and D. V. Voronine, “Quantum plasmonic hot-electron injection in lateral WSe2/MoSe2 heterostructures,” Phys. Rev. B 98(4), 041402 (2018).
[Crossref]

Cheng, C.-C.

M.-Y. Li, Y. Shi, C.-C. Cheng, L.-S. Lu, Y.-C. Lin, H.-L. Tang, M.-L. Tsai, C.-W. Chu, K.-H. Wei, J.-H. He, W.-H. Chang, K. Suenaga, and L.-J. Li, “Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface,” Science 349(6247), 524–528 (2015).
[Crossref]

Chernikov, A.

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2,” Phys. Rev. Lett. 113(7), 076802 (2014).
[Crossref]

Chim, C.-Y.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging Photoluminescence in Monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref]

Chiu, H.-Y.

F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast Charge Separation and Indirect Exciton Formation in a MoS2–MoSe2 van der Waals Heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref]

Chiu, M.-H.

H.-V. Han, A.-Y. Lu, L.-S. Lu, J.-K. Huang, H. Li, C.-L. Hsu, Y.-C. Lin, M.-H. Chiu, K. Suenaga, C.-W. Chu, H.-C. Kuo, W.-H. Chang, L.-J. Li, and Y. Shi, “Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment,” ACS Nano 10(1), 1454–1461 (2016).
[Crossref]

Cho, B. J.

G. W. Shim, K. Yoo, S.-B. Seo, J. Shin, D. Y. Jung, I.-S. Kang, C. W. Ahn, B. J. Cho, and S.-Y. Choi, “Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures,” ACS Nano 8(7), 6655–6662 (2014).
[Crossref]

Cho, K.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref]

Choi, S.-Y.

G. W. Shim, K. Yoo, S.-B. Seo, J. Shin, D. Y. Jung, I.-S. Kang, C. W. Ahn, B. J. Cho, and S.-Y. Choi, “Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures,” ACS Nano 8(7), 6655–6662 (2014).
[Crossref]

Chou, Y.-C.

W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li, and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2,” Nat. Commun. 8(1), 929 (2017).
[Crossref]

Chu, C.-W.

H.-V. Han, A.-Y. Lu, L.-S. Lu, J.-K. Huang, H. Li, C.-L. Hsu, Y.-C. Lin, M.-H. Chiu, K. Suenaga, C.-W. Chu, H.-C. Kuo, W.-H. Chang, L.-J. Li, and Y. Shi, “Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment,” ACS Nano 10(1), 1454–1461 (2016).
[Crossref]

M.-Y. Li, Y. Shi, C.-C. Cheng, L.-S. Lu, Y.-C. Lin, H.-L. Tang, M.-L. Tsai, C.-W. Chu, K.-H. Wei, J.-H. He, W.-H. Chang, K. Suenaga, and L.-J. Li, “Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface,” Science 349(6247), 524–528 (2015).
[Crossref]

Chung, K.-H.

F. Ullah, Y. Sim, C. T. Le, M.-J. Seong, J. I. Jang, S. H. Rhim, B. C. Tran Khac, K.-H. Chung, K. Park, Y. Lee, K. Kim, H. Y. Jeong, and Y. S. Kim, “Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure,” ACS Nano 11(9), 8822–8829 (2017).
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Clark, G.

K.-D. Park, T. Jiang, G. Clark, X. Xu, and M. B. Raschke, “Radiative control of dark excitons at room temperature by nano-optical antenna-tip Purcell effect,” Nat. Nanotechnol. 13(1), 59–64 (2018).
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K.-D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid Tip-Enhanced Nanospectroscopy and Nanoimaging of Monolayer WSe2 with Local Strain Control,” Nano Lett. 16(4), 2621–2627 (2016).
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Cobden, D. H.

C. Huang, S. Wu, A. M. Sanchez, J. J. P. Peters, R. Beanland, J. S. Ross, P. Rivera, W. Yao, D. H. Cobden, and X. Xu, “Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors,” Nat. Mater. 13(12), 1096–1101 (2014).
[Crossref]

Devižis, A.

D. A. Vithanage, A. Devižis, V. Abramavičius, Y. Infahsaeng, D. Abramavičius, R. C. I. MacKenzie, P. E. Keivanidis, A. Yartsev, D. Hertel, J. Nelson, V. Sundström, and V. Gulbinas, “Visualizing charge separation in bulk heterojunction organic solar cells,” Nat. Commun. 4(1), 2334 (2013).
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Dhakal, K. P.

K. P. Dhakal, D. L. Duong, J. Lee, H. Nam, M. Kim, M. Kan, Y. H. Lee, and J. Kim, “Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2,” Nanoscale 6(21), 13028–13035 (2014).
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Dubey, M.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref]

Duong, D. L.

K. P. Dhakal, D. L. Duong, J. Lee, H. Nam, M. Kim, M. Kan, Y. H. Lee, and J. Kim, “Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2,” Nanoscale 6(21), 13028–13035 (2014).
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Eda, G.

W. Zhao, Z. Ghorannevis, K. K. Amara, J. R. Pang, M. Toh, X. Zhang, C. Kloc, P. H. Tan, and G. Eda, “Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2,” Nanoscale 5(20), 9677–9683 (2013).
[Crossref]

Flynn, G. W.

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
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Galli, G.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging Photoluminescence in Monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref]

Ghimire, N. J.

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
[Crossref]

Ghorannevis, Z.

W. Zhao, Z. Ghorannevis, K. K. Amara, J. R. Pang, M. Toh, X. Zhang, C. Kloc, P. H. Tan, and G. Eda, “Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2,” Nanoscale 5(20), 9677–9683 (2013).
[Crossref]

Giacometti, V.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref]

Gong, Y.

Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J. Beng, S. T. Lou, Z. Pantelides, W. Liu, P. M. Zhou, and Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” Nat. Mater. 13(12), 1135–1142 (2014).
[Crossref]

Gong, Z.

K. W. Lau, Calvin, Z. Gong, H. Yu, and W. Yao, “Interface excitons at lateral heterojunctions in monolayer semiconductors,” Phys. Rev. B 98(11), 115427 (2018).
[Crossref]

Gordan, O.

Grossman, J. C.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref]

Gulbinas, V.

D. A. Vithanage, A. Devižis, V. Abramavičius, Y. Infahsaeng, D. Abramavičius, R. C. I. MacKenzie, P. E. Keivanidis, A. Yartsev, D. Hertel, J. Nelson, V. Sundström, and V. Gulbinas, “Visualizing charge separation in bulk heterojunction organic solar cells,” Nat. Commun. 4(1), 2334 (2013).
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Han, G. H.

Y. Lee, S. J. Yun, Y. Kim, M. S. Kim, G. H. Han, A. K. Sood, and J. Kim, “Near-field spectral mapping of individual exciton complexes of monolayer WS2 correlated with local defects and charge population,” Nanoscale 9(6), 2272–2278 (2017).
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H. Kim, G. H. Han, S. J. Yun, J. Zhao, D. H. Keum, H. Y. Jeong, T. H. Ly, Y. Jin, J.-H. Park, B. H. Moon, S.-W. Kim, and Y. H. Lee, “Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides,” Nanotechnology 28(36), 36LT01 (2017).
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S. Park, H. Kim, M. S. Kim, G. H. Han, and J. Kim, “Dependence of Raman and absorption spectra of stacked bilayer MoS2 on the stacking orientation,” Opt. Express 24(19), 21551–21559 (2016).
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M. S. Kim, S. J. Yun, Y. Lee, C. Seo, G. H. Han, K. K. Kim, Y. H. Lee, and J. Kim, “Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers,” ACS Nano 10(2), 2399–2405 (2016).
[Crossref]

M. S. Kim, C. Seo, H. Kim, J. Lee, D. H. Luong, J.-H. Park, G. H. Han, and J. Kim, “Simultaneous Hosting of Positive and Negative Trions and the Enhanced Direct Band Emission in MoSe2/MoS2 Heterostacked Multilayers,” ACS Nano 10(6), 6211–6219 (2016).
[Crossref]

Y. Lee, S. Park, H. Kim, G. H. Han, Y. H. Lee, and J. Kim, “Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging,” Nanoscale 7(28), 11909–11914 (2015).
[Crossref]

Han, H.-V.

H.-V. Han, A.-Y. Lu, L.-S. Lu, J.-K. Huang, H. Li, C.-L. Hsu, Y.-C. Lin, M.-H. Chiu, K. Suenaga, C.-W. Chu, H.-C. Kuo, W.-H. Chang, L.-J. Li, and Y. Shi, “Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment,” ACS Nano 10(1), 1454–1461 (2016).
[Crossref]

Han, S. W.

W. S. Yun, S. W. Han, S. C. Hong, I. G. Kim, and J. D. Lee, “Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te),” Phys. Rev. B 85(3), 033305 (2012).
[Crossref]

Havener, R. W.

M. P. Levendorf, C.-J. Kim, L. Brown, P. Y. Huang, R. W. Havener, D. A. Muller, and J. Park, “Graphene and boron nitride lateral heterostructures for atomically thin circuitry,” Nature 488(7413), 627–632 (2012).
[Crossref]

He, D.

H. Nan, Z. Wang, W. Wang, Z. Liang, Y. Lu, Q. Chen, D. He, P. Tan, F. Miao, X. Wang, J. Wang, and Z. Ni, “Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding,” ACS Nano 8(6), 5738–5745 (2014).
[Crossref]

He, J.-H.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref]

M.-Y. Li, Y. Shi, C.-C. Cheng, L.-S. Lu, Y.-C. Lin, H.-L. Tang, M.-L. Tsai, C.-W. Chu, K.-H. Wei, J.-H. He, W.-H. Chang, K. Suenaga, and L.-J. Li, “Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface,” Science 349(6247), 524–528 (2015).
[Crossref]

He, K.

K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and J. Shan, “Tightly bound trions in monolayer MoS2,” Nat. Mater. 12(3), 207–211 (2013).
[Crossref]

He, Z.

C. Tang, Z. He, W. Chen, S. Jia, J. Lou, and D. V. Voronine, “Quantum plasmonic hot-electron injection in lateral WSe2/MoSe2 heterostructures,” Phys. Rev. B 98(4), 041402 (2018).
[Crossref]

Heinz, T. F.

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
[Crossref]

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2,” Phys. Rev. Lett. 113(7), 076802 (2014).
[Crossref]

K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and J. Shan, “Tightly bound trions in monolayer MoS2,” Nat. Mater. 12(3), 207–211 (2013).
[Crossref]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref]

Hertel, D.

D. A. Vithanage, A. Devižis, V. Abramavičius, Y. Infahsaeng, D. Abramavičius, R. C. I. MacKenzie, P. E. Keivanidis, A. Yartsev, D. Hertel, J. Nelson, V. Sundström, and V. Gulbinas, “Visualizing charge separation in bulk heterojunction organic solar cells,” Nat. Commun. 4(1), 2334 (2013).
[Crossref]

Hill, H. M.

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
[Crossref]

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2,” Phys. Rev. Lett. 113(7), 076802 (2014).
[Crossref]

Hoang, T. B.

J. Huang, T. B. Hoang, and M. H. Mikkelsen, “Probing the origin of excitonic states in monolayer WSe2,” Sci. Rep. 6(1), 22414 (2016).
[Crossref]

Holleitner, A.

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref]

Hone, J.

K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and J. Shan, “Tightly bound trions in monolayer MoS2,” Nat. Mater. 12(3), 207–211 (2013).
[Crossref]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref]

Hong, S. C.

W. S. Yun, S. W. Han, S. C. Hong, I. G. Kim, and J. D. Lee, “Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te),” Phys. Rev. B 85(3), 033305 (2012).
[Crossref]

Hong, X.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref]

Hsu, C.-L.

H.-V. Han, A.-Y. Lu, L.-S. Lu, J.-K. Huang, H. Li, C.-L. Hsu, Y.-C. Lin, M.-H. Chiu, K. Suenaga, C.-W. Chu, H.-C. Kuo, W.-H. Chang, L.-J. Li, and Y. Shi, “Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment,” ACS Nano 10(1), 1454–1461 (2016).
[Crossref]

Hsu, W.-T.

W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li, and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2,” Nat. Commun. 8(1), 929 (2017).
[Crossref]

Huang, C.

C. Huang, S. Wu, A. M. Sanchez, J. J. P. Peters, R. Beanland, J. S. Ross, P. Rivera, W. Yao, D. H. Cobden, and X. Xu, “Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors,” Nat. Mater. 13(12), 1096–1101 (2014).
[Crossref]

Huang, J.

J. Huang, T. B. Hoang, and M. H. Mikkelsen, “Probing the origin of excitonic states in monolayer WSe2,” Sci. Rep. 6(1), 22414 (2016).
[Crossref]

Huang, J.-K.

W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li, and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2,” Nat. Commun. 8(1), 929 (2017).
[Crossref]

H.-V. Han, A.-Y. Lu, L.-S. Lu, J.-K. Huang, H. Li, C.-L. Hsu, Y.-C. Lin, M.-H. Chiu, K. Suenaga, C.-W. Chu, H.-C. Kuo, W.-H. Chang, L.-J. Li, and Y. Shi, “Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment,” ACS Nano 10(1), 1454–1461 (2016).
[Crossref]

Huang, P. Y.

M. P. Levendorf, C.-J. Kim, L. Brown, P. Y. Huang, R. W. Havener, D. A. Muller, and J. Park, “Graphene and boron nitride lateral heterostructures for atomically thin circuitry,” Nature 488(7413), 627–632 (2012).
[Crossref]

Hybertsen, M. S.

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2,” Phys. Rev. Lett. 113(7), 076802 (2014).
[Crossref]

Infahsaeng, Y.

D. A. Vithanage, A. Devižis, V. Abramavičius, Y. Infahsaeng, D. Abramavičius, R. C. I. MacKenzie, P. E. Keivanidis, A. Yartsev, D. Hertel, J. Nelson, V. Sundström, and V. Gulbinas, “Visualizing charge separation in bulk heterojunction organic solar cells,” Nat. Commun. 4(1), 2334 (2013).
[Crossref]

Jahnke, F.

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref]

Jang, J. I.

F. Ullah, Y. Sim, C. T. Le, M.-J. Seong, J. I. Jang, S. H. Rhim, B. C. Tran Khac, K.-H. Chung, K. Park, Y. Lee, K. Kim, H. Y. Jeong, and Y. S. Kim, “Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure,” ACS Nano 11(9), 8822–8829 (2017).
[Crossref]

Javey, A.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref]

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref]

Jeng, H.-T.

W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li, and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2,” Nat. Commun. 8(1), 929 (2017).
[Crossref]

Jeong, H. Y.

F. Ullah, Y. Sim, C. T. Le, M.-J. Seong, J. I. Jang, S. H. Rhim, B. C. Tran Khac, K.-H. Chung, K. Park, Y. Lee, K. Kim, H. Y. Jeong, and Y. S. Kim, “Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure,” ACS Nano 11(9), 8822–8829 (2017).
[Crossref]

H. Kim, G. H. Han, S. J. Yun, J. Zhao, D. H. Keum, H. Y. Jeong, T. H. Ly, Y. Jin, J.-H. Park, B. H. Moon, S.-W. Kim, and Y. H. Lee, “Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides,” Nanotechnology 28(36), 36LT01 (2017).
[Crossref]

Jia, S.

C. Tang, Z. He, W. Chen, S. Jia, J. Lou, and D. V. Voronine, “Quantum plasmonic hot-electron injection in lateral WSe2/MoSe2 heterostructures,” Phys. Rev. B 98(4), 041402 (2018).
[Crossref]

Jiang, T.

K.-D. Park, T. Jiang, G. Clark, X. Xu, and M. B. Raschke, “Radiative control of dark excitons at room temperature by nano-optical antenna-tip Purcell effect,” Nat. Nanotechnol. 13(1), 59–64 (2018).
[Crossref]

Jin, C.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref]

Jin, Y.

H. Kim, G. H. Han, S. J. Yun, J. Zhao, D. H. Keum, H. Y. Jeong, T. H. Ly, Y. Jin, J.-H. Park, B. H. Moon, S.-W. Kim, and Y. H. Lee, “Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides,” Nanotechnology 28(36), 36LT01 (2017).
[Crossref]

Jones, A. M.

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
[Crossref]

Juang, Z.-Y.

W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li, and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2,” Nat. Commun. 8(1), 929 (2017).
[Crossref]

Jung, D. Y.

G. W. Shim, K. Yoo, S.-B. Seo, J. Shin, D. Y. Jung, I.-S. Kang, C. W. Ahn, B. J. Cho, and S.-Y. Choi, “Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures,” ACS Nano 8(7), 6655–6662 (2014).
[Crossref]

Kan, M.

K. P. Dhakal, D. L. Duong, J. Lee, H. Nam, M. Kim, M. Kan, Y. H. Lee, and J. Kim, “Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2,” Nanoscale 6(21), 13028–13035 (2014).
[Crossref]

Kang, I.-S.

G. W. Shim, K. Yoo, S.-B. Seo, J. Shin, D. Y. Jung, I.-S. Kang, C. W. Ahn, B. J. Cho, and S.-Y. Choi, “Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures,” ACS Nano 8(7), 6655–6662 (2014).
[Crossref]

Kang, J.

J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, “Band offsets and heterostructures of two-dimensional semiconductors,” Appl. Phys. Lett. 102(1), 012111 (2013).
[Crossref]

Kang, J. S.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref]

KC, S.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref]

Keivanidis, P. E.

D. A. Vithanage, A. Devižis, V. Abramavičius, Y. Infahsaeng, D. Abramavičius, R. C. I. MacKenzie, P. E. Keivanidis, A. Yartsev, D. Hertel, J. Nelson, V. Sundström, and V. Gulbinas, “Visualizing charge separation in bulk heterojunction organic solar cells,” Nat. Commun. 4(1), 2334 (2013).
[Crossref]

Keum, D. H.

H. Kim, G. H. Han, S. J. Yun, J. Zhao, D. H. Keum, H. Y. Jeong, T. H. Ly, Y. Jin, J.-H. Park, B. H. Moon, S.-W. Kim, and Y. H. Lee, “Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides,” Nanotechnology 28(36), 36LT01 (2017).
[Crossref]

Khatib, O.

K.-D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid Tip-Enhanced Nanospectroscopy and Nanoimaging of Monolayer WSe2 with Local Strain Control,” Nano Lett. 16(4), 2621–2627 (2016).
[Crossref]

Kim, C.-J.

M. P. Levendorf, C.-J. Kim, L. Brown, P. Y. Huang, R. W. Havener, D. A. Muller, and J. Park, “Graphene and boron nitride lateral heterostructures for atomically thin circuitry,” Nature 488(7413), 627–632 (2012).
[Crossref]

Kim, H.

Y. Kim, Y. Lee, H. Kim, S. Roy, and J. Kim, “Near-field exciton imaging of chemically treated MoS2 monolayers,” Nanoscale 10(18), 8851–8858 (2018).
[Crossref]

H. Kim, G. H. Han, S. J. Yun, J. Zhao, D. H. Keum, H. Y. Jeong, T. H. Ly, Y. Jin, J.-H. Park, B. H. Moon, S.-W. Kim, and Y. H. Lee, “Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides,” Nanotechnology 28(36), 36LT01 (2017).
[Crossref]

S. Park, H. Kim, M. S. Kim, G. H. Han, and J. Kim, “Dependence of Raman and absorption spectra of stacked bilayer MoS2 on the stacking orientation,” Opt. Express 24(19), 21551–21559 (2016).
[Crossref]

M. S. Kim, C. Seo, H. Kim, J. Lee, D. H. Luong, J.-H. Park, G. H. Han, and J. Kim, “Simultaneous Hosting of Positive and Negative Trions and the Enhanced Direct Band Emission in MoSe2/MoS2 Heterostacked Multilayers,” ACS Nano 10(6), 6211–6219 (2016).
[Crossref]

Y. Lee, S. Park, H. Kim, G. H. Han, Y. H. Lee, and J. Kim, “Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging,” Nanoscale 7(28), 11909–11914 (2015).
[Crossref]

Kim, I. G.

W. S. Yun, S. W. Han, S. C. Hong, I. G. Kim, and J. D. Lee, “Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te),” Phys. Rev. B 85(3), 033305 (2012).
[Crossref]

Kim, J.

Y. Kim, Y. Lee, H. Kim, S. Roy, and J. Kim, “Near-field exciton imaging of chemically treated MoS2 monolayers,” Nanoscale 10(18), 8851–8858 (2018).
[Crossref]

Y. Lee, S. J. Yun, Y. Kim, M. S. Kim, G. H. Han, A. K. Sood, and J. Kim, “Near-field spectral mapping of individual exciton complexes of monolayer WS2 correlated with local defects and charge population,” Nanoscale 9(6), 2272–2278 (2017).
[Crossref]

M. S. Kim, S. J. Yun, Y. Lee, C. Seo, G. H. Han, K. K. Kim, Y. H. Lee, and J. Kim, “Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers,” ACS Nano 10(2), 2399–2405 (2016).
[Crossref]

M. S. Kim, C. Seo, H. Kim, J. Lee, D. H. Luong, J.-H. Park, G. H. Han, and J. Kim, “Simultaneous Hosting of Positive and Negative Trions and the Enhanced Direct Band Emission in MoSe2/MoS2 Heterostacked Multilayers,” ACS Nano 10(6), 6211–6219 (2016).
[Crossref]

S. Park, H. Kim, M. S. Kim, G. H. Han, and J. Kim, “Dependence of Raman and absorption spectra of stacked bilayer MoS2 on the stacking orientation,” Opt. Express 24(19), 21551–21559 (2016).
[Crossref]

Y. Lee, S. Park, H. Kim, G. H. Han, Y. H. Lee, and J. Kim, “Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging,” Nanoscale 7(28), 11909–11914 (2015).
[Crossref]

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref]

K. P. Dhakal, D. L. Duong, J. Lee, H. Nam, M. Kim, M. Kan, Y. H. Lee, and J. Kim, “Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2,” Nanoscale 6(21), 13028–13035 (2014).
[Crossref]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging Photoluminescence in Monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref]

Kim, K.

F. Ullah, Y. Sim, C. T. Le, M.-J. Seong, J. I. Jang, S. H. Rhim, B. C. Tran Khac, K.-H. Chung, K. Park, Y. Lee, K. Kim, H. Y. Jeong, and Y. S. Kim, “Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure,” ACS Nano 11(9), 8822–8829 (2017).
[Crossref]

Kim, K. K.

M. S. Kim, S. J. Yun, Y. Lee, C. Seo, G. H. Han, K. K. Kim, Y. H. Lee, and J. Kim, “Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers,” ACS Nano 10(2), 2399–2405 (2016).
[Crossref]

Kim, M.

K. P. Dhakal, D. L. Duong, J. Lee, H. Nam, M. Kim, M. Kan, Y. H. Lee, and J. Kim, “Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2,” Nanoscale 6(21), 13028–13035 (2014).
[Crossref]

Kim, M. S.

Y. Lee, S. J. Yun, Y. Kim, M. S. Kim, G. H. Han, A. K. Sood, and J. Kim, “Near-field spectral mapping of individual exciton complexes of monolayer WS2 correlated with local defects and charge population,” Nanoscale 9(6), 2272–2278 (2017).
[Crossref]

S. Park, H. Kim, M. S. Kim, G. H. Han, and J. Kim, “Dependence of Raman and absorption spectra of stacked bilayer MoS2 on the stacking orientation,” Opt. Express 24(19), 21551–21559 (2016).
[Crossref]

M. S. Kim, C. Seo, H. Kim, J. Lee, D. H. Luong, J.-H. Park, G. H. Han, and J. Kim, “Simultaneous Hosting of Positive and Negative Trions and the Enhanced Direct Band Emission in MoSe2/MoS2 Heterostacked Multilayers,” ACS Nano 10(6), 6211–6219 (2016).
[Crossref]

M. S. Kim, S. J. Yun, Y. Lee, C. Seo, G. H. Han, K. K. Kim, Y. H. Lee, and J. Kim, “Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers,” ACS Nano 10(2), 2399–2405 (2016).
[Crossref]

Kim, S.-W.

H. Kim, G. H. Han, S. J. Yun, J. Zhao, D. H. Keum, H. Y. Jeong, T. H. Ly, Y. Jin, J.-H. Park, B. H. Moon, S.-W. Kim, and Y. H. Lee, “Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides,” Nanotechnology 28(36), 36LT01 (2017).
[Crossref]

Kim, Y.

Y. Kim, Y. Lee, H. Kim, S. Roy, and J. Kim, “Near-field exciton imaging of chemically treated MoS2 monolayers,” Nanoscale 10(18), 8851–8858 (2018).
[Crossref]

Y. Lee, S. J. Yun, Y. Kim, M. S. Kim, G. H. Han, A. K. Sood, and J. Kim, “Near-field spectral mapping of individual exciton complexes of monolayer WS2 correlated with local defects and charge population,” Nanoscale 9(6), 2272–2278 (2017).
[Crossref]

Kim, Y. S.

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M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
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M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li, and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2,” Nat. Commun. 8(1), 929 (2017).
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A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging Photoluminescence in Monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
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H. Nan, Z. Wang, W. Wang, Z. Liang, Y. Lu, Q. Chen, D. He, P. Tan, F. Miao, X. Wang, J. Wang, and Z. Ni, “Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding,” ACS Nano 8(6), 5738–5745 (2014).
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H. Nan, Z. Wang, W. Wang, Z. Liang, Y. Lu, Q. Chen, D. He, P. Tan, F. Miao, X. Wang, J. Wang, and Z. Ni, “Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding,” ACS Nano 8(6), 5738–5745 (2014).
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H. Nan, Z. Wang, W. Wang, Z. Liang, Y. Lu, Q. Chen, D. He, P. Tan, F. Miao, X. Wang, J. Wang, and Z. Ni, “Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding,” ACS Nano 8(6), 5738–5745 (2014).
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Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J. Beng, S. T. Lou, Z. Pantelides, W. Liu, P. M. Zhou, and Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” Nat. Mater. 13(12), 1135–1142 (2014).
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Wang, Y.

N. Peimyoo, W. Yang, J. Shang, X. Shen, Y. Wang, and T. Yu, “Chemically Driven Tunable Light Emission of Charged and Neutral Excitons in Monolayer WS2,” ACS Nano 8(11), 11320–11329 (2014).
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H. Nan, Z. Wang, W. Wang, Z. Liang, Y. Lu, Q. Chen, D. He, P. Tan, F. Miao, X. Wang, J. Wang, and Z. Ni, “Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding,” ACS Nano 8(6), 5738–5745 (2014).
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X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
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S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating,” Nano Lett. 13(6), 2831–2836 (2013).
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J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, “Band offsets and heterostructures of two-dimensional semiconductors,” Appl. Phys. Lett. 102(1), 012111 (2013).
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C. Huang, S. Wu, A. M. Sanchez, J. J. P. Peters, R. Beanland, J. S. Ross, P. Rivera, W. Yao, D. H. Cobden, and X. Xu, “Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors,” Nat. Mater. 13(12), 1096–1101 (2014).
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J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
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B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
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J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
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M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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Xu, X.

K.-D. Park, T. Jiang, G. Clark, X. Xu, and M. B. Raschke, “Radiative control of dark excitons at room temperature by nano-optical antenna-tip Purcell effect,” Nat. Nanotechnol. 13(1), 59–64 (2018).
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K.-D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid Tip-Enhanced Nanospectroscopy and Nanoimaging of Monolayer WSe2 with Local Strain Control,” Nano Lett. 16(4), 2621–2627 (2016).
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C. Huang, S. Wu, A. M. Sanchez, J. J. P. Peters, R. Beanland, J. S. Ross, P. Rivera, W. Yao, D. H. Cobden, and X. Xu, “Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors,” Nat. Mater. 13(12), 1096–1101 (2014).
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J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
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Xue, W.

W. Xue, P. K. Sahoo, J. Liu, H. Zong, X. Lai, S. Ambardar, and D. V. Voronine, “Nano-optical imaging of monolayer MoSe2-WSe2 lateral heterostructure with subwavelength domains,” J. Vac. Sci. Technol., A 36(5), 05G502 (2018).
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M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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Yakobson, B. I.

J. Yuan, S. Najmaei, Z. Zhang, J. Zhang, S. Lei, P. M. Ajayan, B. I. Yakobson, and J. Lou, “Photoluminescence Quenching and Charge Transfer in Artificial Heterostacks of Monolayer Transition Metal Dichalcogenides and Few-Layer Black Phosphorus,” ACS Nano 9(1), 555–563 (2015).
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Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J. Beng, S. T. Lou, Z. Pantelides, W. Liu, P. M. Zhou, and Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” Nat. Mater. 13(12), 1135–1142 (2014).
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Yan, J.

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
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Yan, T.

T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photoluminescence properties and exciton dynamics in monolayer WSe2,” Appl. Phys. Lett. 105(10), 101901 (2014).
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Yang, W.

N. Peimyoo, W. Yang, J. Shang, X. Shen, Y. Wang, and T. Yu, “Chemically Driven Tunable Light Emission of Charged and Neutral Excitons in Monolayer WS2,” ACS Nano 8(11), 11320–11329 (2014).
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Yao, W.

K. W. Lau, Calvin, Z. Gong, H. Yu, and W. Yao, “Interface excitons at lateral heterojunctions in monolayer semiconductors,” Phys. Rev. B 98(11), 115427 (2018).
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C. Huang, S. Wu, A. M. Sanchez, J. J. P. Peters, R. Beanland, J. S. Ross, P. Rivera, W. Yao, D. H. Cobden, and X. Xu, “Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors,” Nat. Mater. 13(12), 1096–1101 (2014).
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J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
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D. A. Vithanage, A. Devižis, V. Abramavičius, Y. Infahsaeng, D. Abramavičius, R. C. I. MacKenzie, P. E. Keivanidis, A. Yartsev, D. Hertel, J. Nelson, V. Sundström, and V. Gulbinas, “Visualizing charge separation in bulk heterojunction organic solar cells,” Nat. Commun. 4(1), 2334 (2013).
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Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J. Beng, S. T. Lou, Z. Pantelides, W. Liu, P. M. Zhou, and Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” Nat. Mater. 13(12), 1135–1142 (2014).
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G. W. Shim, K. Yoo, S.-B. Seo, J. Shin, D. Y. Jung, I.-S. Kang, C. W. Ahn, B. J. Cho, and S.-Y. Choi, “Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures,” ACS Nano 8(7), 6655–6662 (2014).
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You, L.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating,” Nano Lett. 13(6), 2831–2836 (2013).
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K. W. Lau, Calvin, Z. Gong, H. Yu, and W. Yao, “Interface excitons at lateral heterojunctions in monolayer semiconductors,” Phys. Rev. B 98(11), 115427 (2018).
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J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
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Yu, T.

N. Peimyoo, W. Yang, J. Shang, X. Shen, Y. Wang, and T. Yu, “Chemically Driven Tunable Light Emission of Charged and Neutral Excitons in Monolayer WS2,” ACS Nano 8(11), 11320–11329 (2014).
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Yuan, J.

J. Yuan, S. Najmaei, Z. Zhang, J. Zhang, S. Lei, P. M. Ajayan, B. I. Yakobson, and J. Lou, “Photoluminescence Quenching and Charge Transfer in Artificial Heterostacks of Monolayer Transition Metal Dichalcogenides and Few-Layer Black Phosphorus,” ACS Nano 9(1), 555–563 (2015).
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H. Kim, G. H. Han, S. J. Yun, J. Zhao, D. H. Keum, H. Y. Jeong, T. H. Ly, Y. Jin, J.-H. Park, B. H. Moon, S.-W. Kim, and Y. H. Lee, “Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides,” Nanotechnology 28(36), 36LT01 (2017).
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M. S. Kim, S. J. Yun, Y. Lee, C. Seo, G. H. Han, K. K. Kim, Y. H. Lee, and J. Kim, “Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers,” ACS Nano 10(2), 2399–2405 (2016).
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Yun, W. S.

W. S. Yun, S. W. Han, S. C. Hong, I. G. Kim, and J. D. Lee, “Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te),” Phys. Rev. B 85(3), 033305 (2012).
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Zhang, J.

J. Yuan, S. Najmaei, Z. Zhang, J. Zhang, S. Lei, P. M. Ajayan, B. I. Yakobson, and J. Lou, “Photoluminescence Quenching and Charge Transfer in Artificial Heterostacks of Monolayer Transition Metal Dichalcogenides and Few-Layer Black Phosphorus,” ACS Nano 9(1), 555–563 (2015).
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Zhang, X.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photoluminescence properties and exciton dynamics in monolayer WSe2,” Appl. Phys. Lett. 105(10), 101901 (2014).
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P. Tonndorf, R. Schmidt, P. Böttger, X. Zhang, J. Börner, A. Liebig, M. Albrecht, C. Kloc, O. Gordan, D. R. T. Zahn, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2,” Opt. Express 21(4), 4908–4916 (2013).
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W. Zhao, Z. Ghorannevis, K. K. Amara, J. R. Pang, M. Toh, X. Zhang, C. Kloc, P. H. Tan, and G. Eda, “Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2,” Nanoscale 5(20), 9677–9683 (2013).
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Zhang, Y.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
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X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
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A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging Photoluminescence in Monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
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Zhang, Z.

J. Yuan, S. Najmaei, Z. Zhang, J. Zhang, S. Lei, P. M. Ajayan, B. I. Yakobson, and J. Lou, “Photoluminescence Quenching and Charge Transfer in Artificial Heterostacks of Monolayer Transition Metal Dichalcogenides and Few-Layer Black Phosphorus,” ACS Nano 9(1), 555–563 (2015).
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Zhao, H.

F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast Charge Separation and Indirect Exciton Formation in a MoS2–MoSe2 van der Waals Heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
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Zhao, J.

H. Kim, G. H. Han, S. J. Yun, J. Zhao, D. H. Keum, H. Y. Jeong, T. H. Ly, Y. Jin, J.-H. Park, B. H. Moon, S.-W. Kim, and Y. H. Lee, “Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides,” Nanotechnology 28(36), 36LT01 (2017).
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Zhao, W.

W. Zhao, Z. Ghorannevis, K. K. Amara, J. R. Pang, M. Toh, X. Zhang, C. Kloc, P. H. Tan, and G. Eda, “Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2,” Nanoscale 5(20), 9677–9683 (2013).
[Crossref]

Zhou, J.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating,” Nano Lett. 13(6), 2831–2836 (2013).
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J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, “Band offsets and heterostructures of two-dimensional semiconductors,” Appl. Phys. Lett. 102(1), 012111 (2013).
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Zhou, P. M.

Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J. Beng, S. T. Lou, Z. Pantelides, W. Liu, P. M. Zhou, and Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” Nat. Mater. 13(12), 1135–1142 (2014).
[Crossref]

Zong, H.

W. Xue, P. K. Sahoo, J. Liu, H. Zong, X. Lai, S. Ambardar, and D. V. Voronine, “Nano-optical imaging of monolayer MoSe2-WSe2 lateral heterostructure with subwavelength domains,” J. Vac. Sci. Technol., A 36(5), 05G502 (2018).
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Zou, X.

Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J. Beng, S. T. Lou, Z. Pantelides, W. Liu, P. M. Zhou, and Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” Nat. Mater. 13(12), 1135–1142 (2014).
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ACS Nano (9)

H. Nan, Z. Wang, W. Wang, Z. Liang, Y. Lu, Q. Chen, D. He, P. Tan, F. Miao, X. Wang, J. Wang, and Z. Ni, “Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding,” ACS Nano 8(6), 5738–5745 (2014).
[Crossref]

N. Peimyoo, W. Yang, J. Shang, X. Shen, Y. Wang, and T. Yu, “Chemically Driven Tunable Light Emission of Charged and Neutral Excitons in Monolayer WS2,” ACS Nano 8(11), 11320–11329 (2014).
[Crossref]

M. S. Kim, S. J. Yun, Y. Lee, C. Seo, G. H. Han, K. K. Kim, Y. H. Lee, and J. Kim, “Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers,” ACS Nano 10(2), 2399–2405 (2016).
[Crossref]

H.-V. Han, A.-Y. Lu, L.-S. Lu, J.-K. Huang, H. Li, C.-L. Hsu, Y.-C. Lin, M.-H. Chiu, K. Suenaga, C.-W. Chu, H.-C. Kuo, W.-H. Chang, L.-J. Li, and Y. Shi, “Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment,” ACS Nano 10(1), 1454–1461 (2016).
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M. S. Kim, C. Seo, H. Kim, J. Lee, D. H. Luong, J.-H. Park, G. H. Han, and J. Kim, “Simultaneous Hosting of Positive and Negative Trions and the Enhanced Direct Band Emission in MoSe2/MoS2 Heterostacked Multilayers,” ACS Nano 10(6), 6211–6219 (2016).
[Crossref]

F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast Charge Separation and Indirect Exciton Formation in a MoS2–MoSe2 van der Waals Heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref]

J. Yuan, S. Najmaei, Z. Zhang, J. Zhang, S. Lei, P. M. Ajayan, B. I. Yakobson, and J. Lou, “Photoluminescence Quenching and Charge Transfer in Artificial Heterostacks of Monolayer Transition Metal Dichalcogenides and Few-Layer Black Phosphorus,” ACS Nano 9(1), 555–563 (2015).
[Crossref]

F. Ullah, Y. Sim, C. T. Le, M.-J. Seong, J. I. Jang, S. H. Rhim, B. C. Tran Khac, K.-H. Chung, K. Park, Y. Lee, K. Kim, H. Y. Jeong, and Y. S. Kim, “Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure,” ACS Nano 11(9), 8822–8829 (2017).
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G. W. Shim, K. Yoo, S.-B. Seo, J. Shin, D. Y. Jung, I.-S. Kang, C. W. Ahn, B. J. Cho, and S.-Y. Choi, “Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures,” ACS Nano 8(7), 6655–6662 (2014).
[Crossref]

Appl. Phys. Lett. (2)

T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photoluminescence properties and exciton dynamics in monolayer WSe2,” Appl. Phys. Lett. 105(10), 101901 (2014).
[Crossref]

J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, “Band offsets and heterostructures of two-dimensional semiconductors,” Appl. Phys. Lett. 102(1), 012111 (2013).
[Crossref]

J. Vac. Sci. Technol., A (1)

W. Xue, P. K. Sahoo, J. Liu, H. Zong, X. Lai, S. Ambardar, and D. V. Voronine, “Nano-optical imaging of monolayer MoSe2-WSe2 lateral heterostructure with subwavelength domains,” J. Vac. Sci. Technol., A 36(5), 05G502 (2018).
[Crossref]

Nano Lett. (7)

K.-D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid Tip-Enhanced Nanospectroscopy and Nanoimaging of Monolayer WSe2 with Local Strain Control,” Nano Lett. 16(4), 2621–2627 (2016).
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B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
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H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
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M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
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S. Mouri, Y. Miyauchi, and K. Matsuda, “Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping,” Nano Lett. 13(12), 5944–5948 (2013).
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S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating,” Nano Lett. 13(6), 2831–2836 (2013).
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A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging Photoluminescence in Monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
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Nanoscale (5)

K. P. Dhakal, D. L. Duong, J. Lee, H. Nam, M. Kim, M. Kan, Y. H. Lee, and J. Kim, “Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2,” Nanoscale 6(21), 13028–13035 (2014).
[Crossref]

Y. Lee, S. Park, H. Kim, G. H. Han, Y. H. Lee, and J. Kim, “Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging,” Nanoscale 7(28), 11909–11914 (2015).
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Y. Lee, S. J. Yun, Y. Kim, M. S. Kim, G. H. Han, A. K. Sood, and J. Kim, “Near-field spectral mapping of individual exciton complexes of monolayer WS2 correlated with local defects and charge population,” Nanoscale 9(6), 2272–2278 (2017).
[Crossref]

Y. Kim, Y. Lee, H. Kim, S. Roy, and J. Kim, “Near-field exciton imaging of chemically treated MoS2 monolayers,” Nanoscale 10(18), 8851–8858 (2018).
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W. Zhao, Z. Ghorannevis, K. K. Amara, J. R. Pang, M. Toh, X. Zhang, C. Kloc, P. H. Tan, and G. Eda, “Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2,” Nanoscale 5(20), 9677–9683 (2013).
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Nanotechnology (1)

H. Kim, G. H. Han, S. J. Yun, J. Zhao, D. H. Keum, H. Y. Jeong, T. H. Ly, Y. Jin, J.-H. Park, B. H. Moon, S.-W. Kim, and Y. H. Lee, “Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides,” Nanotechnology 28(36), 36LT01 (2017).
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Nat. Commun. (3)

W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li, and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2,” Nat. Commun. 8(1), 929 (2017).
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D. A. Vithanage, A. Devižis, V. Abramavičius, Y. Infahsaeng, D. Abramavičius, R. C. I. MacKenzie, P. E. Keivanidis, A. Yartsev, D. Hertel, J. Nelson, V. Sundström, and V. Gulbinas, “Visualizing charge separation in bulk heterojunction organic solar cells,” Nat. Commun. 4(1), 2334 (2013).
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J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat. Commun. 4(1), 1474 (2013).
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Nat. Mater. (3)

Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J. Beng, S. T. Lou, Z. Pantelides, W. Liu, P. M. Zhou, and Ajayan, “Vertical and in-plane heterostructures from WS2/MoS2 monolayers,” Nat. Mater. 13(12), 1135–1142 (2014).
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C. Huang, S. Wu, A. M. Sanchez, J. J. P. Peters, R. Beanland, J. S. Ross, P. Rivera, W. Yao, D. H. Cobden, and X. Xu, “Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors,” Nat. Mater. 13(12), 1096–1101 (2014).
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K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and J. Shan, “Tightly bound trions in monolayer MoS2,” Nat. Mater. 12(3), 207–211 (2013).
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Nat. Nanotechnol. (3)

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
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K.-D. Park, T. Jiang, G. Clark, X. Xu, and M. B. Raschke, “Radiative control of dark excitons at room temperature by nano-optical antenna-tip Purcell effect,” Nat. Nanotechnol. 13(1), 59–64 (2018).
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X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
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Nature (1)

M. P. Levendorf, C.-J. Kim, L. Brown, P. Y. Huang, R. W. Havener, D. A. Muller, and J. Park, “Graphene and boron nitride lateral heterostructures for atomically thin circuitry,” Nature 488(7413), 627–632 (2012).
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Opt. Express (2)

Phys. Rev. B (3)

C. Tang, Z. He, W. Chen, S. Jia, J. Lou, and D. V. Voronine, “Quantum plasmonic hot-electron injection in lateral WSe2/MoSe2 heterostructures,” Phys. Rev. B 98(4), 041402 (2018).
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K. W. Lau, Calvin, Z. Gong, H. Yu, and W. Yao, “Interface excitons at lateral heterojunctions in monolayer semiconductors,” Phys. Rev. B 98(11), 115427 (2018).
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W. S. Yun, S. W. Han, S. C. Hong, I. G. Kim, and J. D. Lee, “Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te),” Phys. Rev. B 85(3), 033305 (2012).
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Phys. Rev. Lett. (2)

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2,” Phys. Rev. Lett. 113(7), 076802 (2014).
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Sci. Rep. (1)

J. Huang, T. B. Hoang, and M. H. Mikkelsen, “Probing the origin of excitonic states in monolayer WSe2,” Sci. Rep. 6(1), 22414 (2016).
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Science (2)

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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M.-Y. Li, Y. Shi, C.-C. Cheng, L.-S. Lu, Y.-C. Lin, H.-L. Tang, M.-L. Tsai, C.-W. Chu, K.-H. Wei, J.-H. He, W.-H. Chang, K. Suenaga, and L.-J. Li, “Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface,” Science 349(6247), 524–528 (2015).
[Crossref]

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Figures (4)

Fig. 1.
Fig. 1. (a) Optical image of MoSe2/WSe2 lateral HJ made between outer (WSe2) and inner (MoSe2) crystal domains. Blue dashed line indicates domain boundary. (b) Raman spectra of A1g modes of WSe2 (upper) and MoSe2 (lower), respectively. Insets: Raman mapping image of A1g modes of WSe2 (upper) and MoSe2 (lower), respectively. The contrast of MoSe2 Raman signal is not completely dark in the WSe2 region because of spectral overlap between the Raman A1g modes of MoSe2 and WSe2, and relatively higher Raman intensity of MoSe2. (c) PL spectra obtained from P1 through P4 positions shown in Fig. 1(a). Vertical lines are visual guides.
Fig. 2.
Fig. 2. Estimation of spatial resolution of the near-field (NF) PL and confocal PL imaging. (a) Confocal and (b) NF PL image of monolayer WSe2. (c) Line profiles of the same region obtained across the crack as indicated in (a, b) by dotted lines. The spatial resolutions of the NF PL and confocal PL images were estimated to be 140 nm and 600 nm, respectively.
Fig. 3.
Fig. 3. (a) NF PL image of MoSe2/WSe2 lateral heterojunction (HJ) (indicated by yellow arrow) composed of WSe2 (outer) and MoSe2 (inner) monolayer domains. Inset: line profile obtained across the HJ (black dash line). (b) Schematic of the sample structure and band alignment of MoSe2 and WSe2. CBM: conduction band minimum. VBM: valence band maximum.
Fig. 4.
Fig. 4. (a) NF PL image of MoSe2/WSe2 lateral HJ. (b) Representative seven PL spectra obtained from white dashed line in Fig. 3(a), red: fitting curve, pink: A of MoSe2, magenta: A0 of MoSe2, green: A of WSe2, blue: A0 of WSe2. (c) A plot of the A/A0 of WSe2 (upper) and MoSe2 (lower) calculated from the result shown in Fig. 3(b). The inset displays the band alignment of MoSe2/WSe2 lateral HJ.

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