Abstract

Laser annealing is a usual step in the process to improve the performance of amorphous InGaZnO4 (a-IGZO) thin film transistors (TFTs). However, a high energy laser will induce damage to a-IGZO thin films during annealing. Knowing laser induced damage thresholds (LIDT) and the mechanisms of a-IGZO thin films helps to use appropriate laser energy density during annealing to avoid damage to the thin films and to achieve the best TFTs’ properties. In this article, the ultraviolet laser with a wavelength of 355 nm and a pulse width of 7.7 ns LIDT and damage mechanisms of a-IGZO thin films are reported. The damage morphologies are characterized with optical microscopy and scanning electron microscope and Raman spectra. The electrical and optical properties of a-IGZO thin films are studied. The a-IGZO thin films have LIDT increased from 0.12 J/cm2, 0.16 J/cm2, and 0.23 J/cm2 to 0.24 J/cm2 with absorbance decreased from 22.4%, 18.1%, and 17.3% to 12.3%. The concentrations of oxygen and free carrier (Ne) and thermal conductivity and optical band gap (Eg) and electrical effective mass (m*) are important factors affecting the LIDT of thin films. The thermal conductivity influences the surface temperature and LIDT of thin films. The increased Eg and m* with the decreased Ne in thin films are other important reasons for the increased LIDT. The laser mainly induces thermal damage of thin films with intrinsic processes including avalanche ionization and multi-photon absorption. No apparent phase transformation and lattice expansion exists during laser irradiation for the stable amorphous structures of a-IGZO thin films.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
  3. J. Bermundo, Y. Ishikawa, M. Fujii, H. Ikenoue, and Y. Uraoka, “H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing,” Appl. Phys. Lett. 110(13), 133503 (2017).
    [Crossref]
  4. M. Nakata, K. Takechi, K. Azuma, E. Tokumitsu, H. Yamaguchi, and S. Kaneko, “Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing,” Appl. Phys. Express 2, 021102 (2009).
    [Crossref]
  5. M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
    [Crossref]
  6. M. Fujii, Y. Ishikawa, R. Ishihara, J. Cingel, M. Mofrad, M. Horita, and Y. Uraoka, “Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing,” Appl. Phys. Lett. 102(12), 122107 (2013).
    [Crossref]
  7. C. Wu, H. Huang, S. Wang, and K. Chang, “High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing,” IEEE Electron Device Lett. 35(10), 1031–1033 (2014).
    [Crossref]
  8. J. Bermundo, Y. Ishikawa, M. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, “Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution processed hybrid passivation layers,” J. Phys. D: Appl. Phys. 49(3), 035102 (2016).
    [Crossref]
  9. C. Tsakonas, V. Kuznetsov, W. Cranton, N. Kalfagiannis, K. Abusabee, D. Koutsogeorgis, N. Abeywickrama, and P. Edwards, “Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post processing,” J. Phys. D: Appl. Phys. 50(48), 485306 (2017).
    [Crossref]
  10. Y. Yang, S. Yang, and K. Chou, “Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing,” IEEE Electron Device Lett. 31(9), 969–971 (2010).
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  21. J. K. Yao, J. M. Lin, F. Ye, and P. Fan, “Optical and electrical properties of transparent conductive air-stable C-axis aligned crystalline InGaZnON thin films,” Opt. Mater. Express 8(10), 2991–2999 (2018).
    [Crossref]
  22. J. K. Yao, F. Ye, and P. Fan, “Substrate temperature and N2 partial pressure dependent optical and electrical properties of InGaZnON thin films,” Mater. Res. Bull., to be published (2019).
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    [Crossref]
  24. G. Korotcenkov, V. Brinzari, and M. Ham, “In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion,” Crystals 8(1), 14 (2018).
    [Crossref]
  25. H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
    [Crossref]
  26. T. Walker, A. Guenther, and P. Nielsen, “Pulsed Laser-Induced Damage To Thin-Film Optical Coatings .2. Theory,” IEEE J. Quantum Electron. 17(10), 2053–2065 (1981).
    [Crossref]
  27. Y. Kim, T. Kim, C. Avis, S. Lee, and J. Jang, “Stable And High-Performance Indium Oxide Thin-Film Transistor By Ga Doping,” IEEE Trans. Electron Devices 63(3), 1078–1084 (2016).
    [Crossref]
  28. I. Hamberg and C. Granqvist, “Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy efficient windows,” J. Appl. Phys. 60(11), R123–R160 (1986).
    [Crossref]

2018 (4)

J. K. Yao, F. Ye, and P. Fan, “Optical and electrical properties of In2MgO4 thin film for transistor,” Opt. Mater. Express 8(11), 3438–3446 (2018).
[Crossref]

Z. Tao, X. Liu, W. Lei, and J. Chen, “High sensitive solar blind phototransistor based on ZnO nanorods/IGZO heterostructure annealed by laser”,” Mater. Lett. 228, 451–455 (2018).
[Crossref]

J. K. Yao, J. M. Lin, F. Ye, and P. Fan, “Optical and electrical properties of transparent conductive air-stable C-axis aligned crystalline InGaZnON thin films,” Opt. Mater. Express 8(10), 2991–2999 (2018).
[Crossref]

G. Korotcenkov, V. Brinzari, and M. Ham, “In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion,” Crystals 8(1), 14 (2018).
[Crossref]

2017 (3)

J. Yoo, A. Lange, J. Bude, and S. Elhadj, “Optical and electrical properties of indium tin oxide films near their laser damage threshold,” Opt. Mater. Express 7(3), 817–826 (2017).
[Crossref]

J. Bermundo, Y. Ishikawa, M. Fujii, H. Ikenoue, and Y. Uraoka, “H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing,” Appl. Phys. Lett. 110(13), 133503 (2017).
[Crossref]

C. Tsakonas, V. Kuznetsov, W. Cranton, N. Kalfagiannis, K. Abusabee, D. Koutsogeorgis, N. Abeywickrama, and P. Edwards, “Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post processing,” J. Phys. D: Appl. Phys. 50(48), 485306 (2017).
[Crossref]

2016 (5)

D. Scorticati, G. Romer, A. Veld, and D. Lange, “Modeling of Temperature Cycles Induced by Pico and Nanosecond Laser Pulses in Zinc Oxide and Molybdenum Thin Films,” J. Heat Transfer 138(3), 031301 (2016).
[Crossref]

N. Lameche, S. Bouzid, M. Hamici, M. Boudissa, S. Messaci, and K. Yahiaoui, “Effect of indium doping on the optical properties and laser damage resistance of ZnO thin films,” Optik 127(20), 9663–9672 (2016).
[Crossref]

J. Yoo, M. Menor, J. Adams, R. Raman, J. Lee, T. Olson, N. Shen, J. Suh, S. Demos, J. Bude, and S. Elhadj, “Laser damage mechanisms in conductive wide gap semiconductor films,” Opt. Express 24(16), 17616–17634 (2016).
[Crossref]

J. Bermundo, Y. Ishikawa, M. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, “Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution processed hybrid passivation layers,” J. Phys. D: Appl. Phys. 49(3), 035102 (2016).
[Crossref]

Y. Kim, T. Kim, C. Avis, S. Lee, and J. Jang, “Stable And High-Performance Indium Oxide Thin-Film Transistor By Ga Doping,” IEEE Trans. Electron Devices 63(3), 1078–1084 (2016).
[Crossref]

2015 (1)

T. Park and D. Kim, “Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrate,” Thin Solid Films 578, 76–82 (2015).
[Crossref]

2014 (2)

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
[Crossref]

C. Wu, H. Huang, S. Wang, and K. Chang, “High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing,” IEEE Electron Device Lett. 35(10), 1031–1033 (2014).
[Crossref]

2013 (2)

M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
[Crossref]

M. Fujii, Y. Ishikawa, R. Ishihara, J. Cingel, M. Mofrad, M. Horita, and Y. Uraoka, “Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing,” Appl. Phys. Lett. 102(12), 122107 (2013).
[Crossref]

2011 (3)

J. K. Yao, N. S. Xu, S. Z. Deng, J. Chen, J. She, H. P. Shieh, P. T. Liu, and Y. P. Huang, “Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy,” IEEE Trans. Electron Devices 58(4), 1121–1126 (2011).
[Crossref]

H. Wang, D. Zhang, Y. Luo, X. Zhao, F. Luo, L. Huang, Y. Li, and W. Wang, “Fabrication and study of laser-damage-resistant transparent conductive W-doped In2O3 films,” J. Phys. D: Appl. Phys. 44(21), 215101 (2011).
[Crossref]

H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]

2010 (2)

Y. Yang, S. Yang, and K. Chou, “Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing,” IEEE Electron Device Lett. 31(9), 969–971 (2010).
[Crossref]

H. Zan, W. Chen, C. Chou, C. Tsai, C. Huang, and H. Hsueh, “Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors,” Electrochem. Solid-State Lett. 13(5), H144–H146 (2010).
[Crossref]

2009 (1)

M. Nakata, K. Takechi, K. Azuma, E. Tokumitsu, H. Yamaguchi, and S. Kaneko, “Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing,” Appl. Phys. Express 2, 021102 (2009).
[Crossref]

2007 (1)

J. K. Yao, J. D. Shao, H. B. He, and Z. X. Fan, “Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors,” Appl. Surf. Sci. 253(22), 8911–8914 (2007).
[Crossref]

1986 (1)

I. Hamberg and C. Granqvist, “Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy efficient windows,” J. Appl. Phys. 60(11), R123–R160 (1986).
[Crossref]

1981 (2)

T. Walker, A. Guenther, and P. Nielsen, “Pulsed Laser-Induced Damage To Thin-Film Optical Coatings .2. Theory,” IEEE J. Quantum Electron. 17(10), 2053–2065 (1981).
[Crossref]

T. Walker, A. Guenther, and P. Nielsen, “Pulsed Laser-Induced Damage To Thin-Film Optical Coatings-Part I: Experimental,” IEEE J. Quantum Electron. 17(10), 2041–2052 (1981).
[Crossref]

Abeywickrama, N.

C. Tsakonas, V. Kuznetsov, W. Cranton, N. Kalfagiannis, K. Abusabee, D. Koutsogeorgis, N. Abeywickrama, and P. Edwards, “Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post processing,” J. Phys. D: Appl. Phys. 50(48), 485306 (2017).
[Crossref]

Abusabee, K.

C. Tsakonas, V. Kuznetsov, W. Cranton, N. Kalfagiannis, K. Abusabee, D. Koutsogeorgis, N. Abeywickrama, and P. Edwards, “Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post processing,” J. Phys. D: Appl. Phys. 50(48), 485306 (2017).
[Crossref]

Adams, J.

Avis, C.

Y. Kim, T. Kim, C. Avis, S. Lee, and J. Jang, “Stable And High-Performance Indium Oxide Thin-Film Transistor By Ga Doping,” IEEE Trans. Electron Devices 63(3), 1078–1084 (2016).
[Crossref]

Azuma, K.

M. Nakata, K. Takechi, K. Azuma, E. Tokumitsu, H. Yamaguchi, and S. Kaneko, “Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing,” Appl. Phys. Express 2, 021102 (2009).
[Crossref]

Bermundo, J.

J. Bermundo, Y. Ishikawa, M. Fujii, H. Ikenoue, and Y. Uraoka, “H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing,” Appl. Phys. Lett. 110(13), 133503 (2017).
[Crossref]

J. Bermundo, Y. Ishikawa, M. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, “Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution processed hybrid passivation layers,” J. Phys. D: Appl. Phys. 49(3), 035102 (2016).
[Crossref]

Boudissa, M.

N. Lameche, S. Bouzid, M. Hamici, M. Boudissa, S. Messaci, and K. Yahiaoui, “Effect of indium doping on the optical properties and laser damage resistance of ZnO thin films,” Optik 127(20), 9663–9672 (2016).
[Crossref]

Bouzid, S.

N. Lameche, S. Bouzid, M. Hamici, M. Boudissa, S. Messaci, and K. Yahiaoui, “Effect of indium doping on the optical properties and laser damage resistance of ZnO thin films,” Optik 127(20), 9663–9672 (2016).
[Crossref]

Brinzari, V.

G. Korotcenkov, V. Brinzari, and M. Ham, “In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion,” Crystals 8(1), 14 (2018).
[Crossref]

Bude, J.

Chang, K.

C. Wu, H. Huang, S. Wang, and K. Chang, “High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing,” IEEE Electron Device Lett. 35(10), 1031–1033 (2014).
[Crossref]

Chen, D.

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
[Crossref]

Chen, J.

Z. Tao, X. Liu, W. Lei, and J. Chen, “High sensitive solar blind phototransistor based on ZnO nanorods/IGZO heterostructure annealed by laser”,” Mater. Lett. 228, 451–455 (2018).
[Crossref]

J. K. Yao, N. S. Xu, S. Z. Deng, J. Chen, J. She, H. P. Shieh, P. T. Liu, and Y. P. Huang, “Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy,” IEEE Trans. Electron Devices 58(4), 1121–1126 (2011).
[Crossref]

Chen, W.

H. Zan, W. Chen, C. Chou, C. Tsai, C. Huang, and H. Hsueh, “Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors,” Electrochem. Solid-State Lett. 13(5), H144–H146 (2010).
[Crossref]

Chou, C.

H. Zan, W. Chen, C. Chou, C. Tsai, C. Huang, and H. Hsueh, “Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors,” Electrochem. Solid-State Lett. 13(5), H144–H146 (2010).
[Crossref]

Chou, K.

Y. Yang, S. Yang, and K. Chou, “Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing,” IEEE Electron Device Lett. 31(9), 969–971 (2010).
[Crossref]

Cingel, J.

M. Fujii, Y. Ishikawa, R. Ishihara, J. Cingel, M. Mofrad, M. Horita, and Y. Uraoka, “Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing,” Appl. Phys. Lett. 102(12), 122107 (2013).
[Crossref]

Cranton, W.

C. Tsakonas, V. Kuznetsov, W. Cranton, N. Kalfagiannis, K. Abusabee, D. Koutsogeorgis, N. Abeywickrama, and P. Edwards, “Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post processing,” J. Phys. D: Appl. Phys. 50(48), 485306 (2017).
[Crossref]

Demos, S.

Deng, S. Z.

J. K. Yao, N. S. Xu, S. Z. Deng, J. Chen, J. She, H. P. Shieh, P. T. Liu, and Y. P. Huang, “Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy,” IEEE Trans. Electron Devices 58(4), 1121–1126 (2011).
[Crossref]

Edwards, P.

C. Tsakonas, V. Kuznetsov, W. Cranton, N. Kalfagiannis, K. Abusabee, D. Koutsogeorgis, N. Abeywickrama, and P. Edwards, “Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post processing,” J. Phys. D: Appl. Phys. 50(48), 485306 (2017).
[Crossref]

Elhadj, S.

Fan, P.

Fan, Z. X.

J. K. Yao, J. D. Shao, H. B. He, and Z. X. Fan, “Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors,” Appl. Surf. Sci. 253(22), 8911–8914 (2007).
[Crossref]

Fujii, M.

J. Bermundo, Y. Ishikawa, M. Fujii, H. Ikenoue, and Y. Uraoka, “H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing,” Appl. Phys. Lett. 110(13), 133503 (2017).
[Crossref]

J. Bermundo, Y. Ishikawa, M. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, “Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution processed hybrid passivation layers,” J. Phys. D: Appl. Phys. 49(3), 035102 (2016).
[Crossref]

M. Fujii, Y. Ishikawa, R. Ishihara, J. Cingel, M. Mofrad, M. Horita, and Y. Uraoka, “Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing,” Appl. Phys. Lett. 102(12), 122107 (2013).
[Crossref]

Fujisaki, Y.

M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
[Crossref]

Granqvist, C.

I. Hamberg and C. Granqvist, “Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy efficient windows,” J. Appl. Phys. 60(11), R123–R160 (1986).
[Crossref]

Guenther, A.

T. Walker, A. Guenther, and P. Nielsen, “Pulsed Laser-Induced Damage To Thin-Film Optical Coatings .2. Theory,” IEEE J. Quantum Electron. 17(10), 2053–2065 (1981).
[Crossref]

T. Walker, A. Guenther, and P. Nielsen, “Pulsed Laser-Induced Damage To Thin-Film Optical Coatings-Part I: Experimental,” IEEE J. Quantum Electron. 17(10), 2041–2052 (1981).
[Crossref]

Ham, M.

G. Korotcenkov, V. Brinzari, and M. Ham, “In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion,” Crystals 8(1), 14 (2018).
[Crossref]

Hamberg, I.

I. Hamberg and C. Granqvist, “Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy efficient windows,” J. Appl. Phys. 60(11), R123–R160 (1986).
[Crossref]

Hamici, M.

N. Lameche, S. Bouzid, M. Hamici, M. Boudissa, S. Messaci, and K. Yahiaoui, “Effect of indium doping on the optical properties and laser damage resistance of ZnO thin films,” Optik 127(20), 9663–9672 (2016).
[Crossref]

He, H. B.

J. K. Yao, J. D. Shao, H. B. He, and Z. X. Fan, “Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors,” Appl. Surf. Sci. 253(22), 8911–8914 (2007).
[Crossref]

Horita, M.

M. Fujii, Y. Ishikawa, R. Ishihara, J. Cingel, M. Mofrad, M. Horita, and Y. Uraoka, “Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing,” Appl. Phys. Lett. 102(12), 122107 (2013).
[Crossref]

Hsueh, H.

H. Zan, W. Chen, C. Chou, C. Tsai, C. Huang, and H. Hsueh, “Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors,” Electrochem. Solid-State Lett. 13(5), H144–H146 (2010).
[Crossref]

Huang, C.

H. Zan, W. Chen, C. Chou, C. Tsai, C. Huang, and H. Hsueh, “Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors,” Electrochem. Solid-State Lett. 13(5), H144–H146 (2010).
[Crossref]

Huang, H.

C. Wu, H. Huang, S. Wang, and K. Chang, “High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing,” IEEE Electron Device Lett. 35(10), 1031–1033 (2014).
[Crossref]

Huang, L.

H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]

H. Wang, D. Zhang, Y. Luo, X. Zhao, F. Luo, L. Huang, Y. Li, and W. Wang, “Fabrication and study of laser-damage-resistant transparent conductive W-doped In2O3 films,” J. Phys. D: Appl. Phys. 44(21), 215101 (2011).
[Crossref]

Huang, X.

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
[Crossref]

Huang, Y. P.

J. K. Yao, N. S. Xu, S. Z. Deng, J. Chen, J. She, H. P. Shieh, P. T. Liu, and Y. P. Huang, “Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy,” IEEE Trans. Electron Devices 58(4), 1121–1126 (2011).
[Crossref]

Huang, Z.

H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]

Ikenoue, H.

J. Bermundo, Y. Ishikawa, M. Fujii, H. Ikenoue, and Y. Uraoka, “H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing,” Appl. Phys. Lett. 110(13), 133503 (2017).
[Crossref]

J. Bermundo, Y. Ishikawa, M. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, “Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution processed hybrid passivation layers,” J. Phys. D: Appl. Phys. 49(3), 035102 (2016).
[Crossref]

Ishihara, R.

J. Bermundo, Y. Ishikawa, M. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, “Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution processed hybrid passivation layers,” J. Phys. D: Appl. Phys. 49(3), 035102 (2016).
[Crossref]

M. Fujii, Y. Ishikawa, R. Ishihara, J. Cingel, M. Mofrad, M. Horita, and Y. Uraoka, “Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing,” Appl. Phys. Lett. 102(12), 122107 (2013).
[Crossref]

Ishikawa, Y.

J. Bermundo, Y. Ishikawa, M. Fujii, H. Ikenoue, and Y. Uraoka, “H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing,” Appl. Phys. Lett. 110(13), 133503 (2017).
[Crossref]

J. Bermundo, Y. Ishikawa, M. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, “Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution processed hybrid passivation layers,” J. Phys. D: Appl. Phys. 49(3), 035102 (2016).
[Crossref]

M. Fujii, Y. Ishikawa, R. Ishihara, J. Cingel, M. Mofrad, M. Horita, and Y. Uraoka, “Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing,” Appl. Phys. Lett. 102(12), 122107 (2013).
[Crossref]

Jang, J.

Y. Kim, T. Kim, C. Avis, S. Lee, and J. Jang, “Stable And High-Performance Indium Oxide Thin-Film Transistor By Ga Doping,” IEEE Trans. Electron Devices 63(3), 1078–1084 (2016).
[Crossref]

Kalfagiannis, N.

C. Tsakonas, V. Kuznetsov, W. Cranton, N. Kalfagiannis, K. Abusabee, D. Koutsogeorgis, N. Abeywickrama, and P. Edwards, “Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post processing,” J. Phys. D: Appl. Phys. 50(48), 485306 (2017).
[Crossref]

Kaneko, S.

M. Nakata, K. Takechi, K. Azuma, E. Tokumitsu, H. Yamaguchi, and S. Kaneko, “Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing,” Appl. Phys. Express 2, 021102 (2009).
[Crossref]

Kim, D.

T. Park and D. Kim, “Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrate,” Thin Solid Films 578, 76–82 (2015).
[Crossref]

Kim, T.

Y. Kim, T. Kim, C. Avis, S. Lee, and J. Jang, “Stable And High-Performance Indium Oxide Thin-Film Transistor By Ga Doping,” IEEE Trans. Electron Devices 63(3), 1078–1084 (2016).
[Crossref]

Kim, Y.

Y. Kim, T. Kim, C. Avis, S. Lee, and J. Jang, “Stable And High-Performance Indium Oxide Thin-Film Transistor By Ga Doping,” IEEE Trans. Electron Devices 63(3), 1078–1084 (2016).
[Crossref]

Korotcenkov, G.

G. Korotcenkov, V. Brinzari, and M. Ham, “In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion,” Crystals 8(1), 14 (2018).
[Crossref]

Koutsogeorgis, D.

C. Tsakonas, V. Kuznetsov, W. Cranton, N. Kalfagiannis, K. Abusabee, D. Koutsogeorgis, N. Abeywickrama, and P. Edwards, “Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post processing,” J. Phys. D: Appl. Phys. 50(48), 485306 (2017).
[Crossref]

Kurita, T.

M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
[Crossref]

Kuznetsov, V.

C. Tsakonas, V. Kuznetsov, W. Cranton, N. Kalfagiannis, K. Abusabee, D. Koutsogeorgis, N. Abeywickrama, and P. Edwards, “Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post processing,” J. Phys. D: Appl. Phys. 50(48), 485306 (2017).
[Crossref]

Lameche, N.

N. Lameche, S. Bouzid, M. Hamici, M. Boudissa, S. Messaci, and K. Yahiaoui, “Effect of indium doping on the optical properties and laser damage resistance of ZnO thin films,” Optik 127(20), 9663–9672 (2016).
[Crossref]

Lange, A.

Lange, D.

D. Scorticati, G. Romer, A. Veld, and D. Lange, “Modeling of Temperature Cycles Induced by Pico and Nanosecond Laser Pulses in Zinc Oxide and Molybdenum Thin Films,” J. Heat Transfer 138(3), 031301 (2016).
[Crossref]

Lee, J.

Lee, S.

Y. Kim, T. Kim, C. Avis, S. Lee, and J. Jang, “Stable And High-Performance Indium Oxide Thin-Film Transistor By Ga Doping,” IEEE Trans. Electron Devices 63(3), 1078–1084 (2016).
[Crossref]

Lei, W.

Z. Tao, X. Liu, W. Lei, and J. Chen, “High sensitive solar blind phototransistor based on ZnO nanorods/IGZO heterostructure annealed by laser”,” Mater. Lett. 228, 451–455 (2018).
[Crossref]

Li, Y.

H. Wang, D. Zhang, Y. Luo, X. Zhao, F. Luo, L. Huang, Y. Li, and W. Wang, “Fabrication and study of laser-damage-resistant transparent conductive W-doped In2O3 films,” J. Phys. D: Appl. Phys. 44(21), 215101 (2011).
[Crossref]

H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]

Lin, J. M.

Liu, P. T.

J. K. Yao, N. S. Xu, S. Z. Deng, J. Chen, J. She, H. P. Shieh, P. T. Liu, and Y. P. Huang, “Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy,” IEEE Trans. Electron Devices 58(4), 1121–1126 (2011).
[Crossref]

Liu, X.

Z. Tao, X. Liu, W. Lei, and J. Chen, “High sensitive solar blind phototransistor based on ZnO nanorods/IGZO heterostructure annealed by laser”,” Mater. Lett. 228, 451–455 (2018).
[Crossref]

Liu, Y.

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
[Crossref]

Lu, H.

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
[Crossref]

Luo, F.

H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]

H. Wang, D. Zhang, Y. Luo, X. Zhao, F. Luo, L. Huang, Y. Li, and W. Wang, “Fabrication and study of laser-damage-resistant transparent conductive W-doped In2O3 films,” J. Phys. D: Appl. Phys. 44(21), 215101 (2011).
[Crossref]

Luo, Y.

H. Wang, D. Zhang, Y. Luo, X. Zhao, F. Luo, L. Huang, Y. Li, and W. Wang, “Fabrication and study of laser-damage-resistant transparent conductive W-doped In2O3 films,” J. Phys. D: Appl. Phys. 44(21), 215101 (2011).
[Crossref]

H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]

Menor, M.

Messaci, S.

N. Lameche, S. Bouzid, M. Hamici, M. Boudissa, S. Messaci, and K. Yahiaoui, “Effect of indium doping on the optical properties and laser damage resistance of ZnO thin films,” Optik 127(20), 9663–9672 (2016).
[Crossref]

Mofrad, M.

M. Fujii, Y. Ishikawa, R. Ishihara, J. Cingel, M. Mofrad, M. Horita, and Y. Uraoka, “Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing,” Appl. Phys. Lett. 102(12), 122107 (2013).
[Crossref]

Nakajima, Y.

M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
[Crossref]

Nakata, M.

M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
[Crossref]

M. Nakata, K. Takechi, K. Azuma, E. Tokumitsu, H. Yamaguchi, and S. Kaneko, “Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing,” Appl. Phys. Express 2, 021102 (2009).
[Crossref]

Nielsen, P.

T. Walker, A. Guenther, and P. Nielsen, “Pulsed Laser-Induced Damage To Thin-Film Optical Coatings-Part I: Experimental,” IEEE J. Quantum Electron. 17(10), 2041–2052 (1981).
[Crossref]

T. Walker, A. Guenther, and P. Nielsen, “Pulsed Laser-Induced Damage To Thin-Film Optical Coatings .2. Theory,” IEEE J. Quantum Electron. 17(10), 2053–2065 (1981).
[Crossref]

Nonaka, T.

J. Bermundo, Y. Ishikawa, M. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, “Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution processed hybrid passivation layers,” J. Phys. D: Appl. Phys. 49(3), 035102 (2016).
[Crossref]

Olson, T.

Park, T.

T. Park and D. Kim, “Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrate,” Thin Solid Films 578, 76–82 (2015).
[Crossref]

Raman, R.

Ren, F.

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
[Crossref]

Romer, G.

D. Scorticati, G. Romer, A. Veld, and D. Lange, “Modeling of Temperature Cycles Induced by Pico and Nanosecond Laser Pulses in Zinc Oxide and Molybdenum Thin Films,” J. Heat Transfer 138(3), 031301 (2016).
[Crossref]

Sato, H.

M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
[Crossref]

Scorticati, D.

D. Scorticati, G. Romer, A. Veld, and D. Lange, “Modeling of Temperature Cycles Induced by Pico and Nanosecond Laser Pulses in Zinc Oxide and Molybdenum Thin Films,” J. Heat Transfer 138(3), 031301 (2016).
[Crossref]

Shao, J. D.

J. K. Yao, J. D. Shao, H. B. He, and Z. X. Fan, “Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors,” Appl. Surf. Sci. 253(22), 8911–8914 (2007).
[Crossref]

She, J.

J. K. Yao, N. S. Xu, S. Z. Deng, J. Chen, J. She, H. P. Shieh, P. T. Liu, and Y. P. Huang, “Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy,” IEEE Trans. Electron Devices 58(4), 1121–1126 (2011).
[Crossref]

Shen, N.

Shieh, H. P.

J. K. Yao, N. S. Xu, S. Z. Deng, J. Chen, J. She, H. P. Shieh, P. T. Liu, and Y. P. Huang, “Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy,” IEEE Trans. Electron Devices 58(4), 1121–1126 (2011).
[Crossref]

Suh, J.

Takechi, K.

M. Nakata, K. Takechi, K. Azuma, E. Tokumitsu, H. Yamaguchi, and S. Kaneko, “Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing,” Appl. Phys. Express 2, 021102 (2009).
[Crossref]

Takei, T.

M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
[Crossref]

Tao, Z.

Z. Tao, X. Liu, W. Lei, and J. Chen, “High sensitive solar blind phototransistor based on ZnO nanorods/IGZO heterostructure annealed by laser”,” Mater. Lett. 228, 451–455 (2018).
[Crossref]

Tokumitsu, E.

M. Nakata, K. Takechi, K. Azuma, E. Tokumitsu, H. Yamaguchi, and S. Kaneko, “Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing,” Appl. Phys. Express 2, 021102 (2009).
[Crossref]

Tsai, C.

H. Zan, W. Chen, C. Chou, C. Tsai, C. Huang, and H. Hsueh, “Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors,” Electrochem. Solid-State Lett. 13(5), H144–H146 (2010).
[Crossref]

Tsakonas, C.

C. Tsakonas, V. Kuznetsov, W. Cranton, N. Kalfagiannis, K. Abusabee, D. Koutsogeorgis, N. Abeywickrama, and P. Edwards, “Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post processing,” J. Phys. D: Appl. Phys. 50(48), 485306 (2017).
[Crossref]

Tsuji, H.

M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
[Crossref]

Uraoka, Y.

J. Bermundo, Y. Ishikawa, M. Fujii, H. Ikenoue, and Y. Uraoka, “H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing,” Appl. Phys. Lett. 110(13), 133503 (2017).
[Crossref]

J. Bermundo, Y. Ishikawa, M. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, “Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution processed hybrid passivation layers,” J. Phys. D: Appl. Phys. 49(3), 035102 (2016).
[Crossref]

M. Fujii, Y. Ishikawa, R. Ishihara, J. Cingel, M. Mofrad, M. Horita, and Y. Uraoka, “Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing,” Appl. Phys. Lett. 102(12), 122107 (2013).
[Crossref]

Veld, A.

D. Scorticati, G. Romer, A. Veld, and D. Lange, “Modeling of Temperature Cycles Induced by Pico and Nanosecond Laser Pulses in Zinc Oxide and Molybdenum Thin Films,” J. Heat Transfer 138(3), 031301 (2016).
[Crossref]

Walker, T.

T. Walker, A. Guenther, and P. Nielsen, “Pulsed Laser-Induced Damage To Thin-Film Optical Coatings .2. Theory,” IEEE J. Quantum Electron. 17(10), 2053–2065 (1981).
[Crossref]

T. Walker, A. Guenther, and P. Nielsen, “Pulsed Laser-Induced Damage To Thin-Film Optical Coatings-Part I: Experimental,” IEEE J. Quantum Electron. 17(10), 2041–2052 (1981).
[Crossref]

Wang, H.

H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]

H. Wang, D. Zhang, Y. Luo, X. Zhao, F. Luo, L. Huang, Y. Li, and W. Wang, “Fabrication and study of laser-damage-resistant transparent conductive W-doped In2O3 films,” J. Phys. D: Appl. Phys. 44(21), 215101 (2011).
[Crossref]

Wang, S.

C. Wu, H. Huang, S. Wang, and K. Chang, “High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing,” IEEE Electron Device Lett. 35(10), 1031–1033 (2014).
[Crossref]

Wang, W.

H. Wang, D. Zhang, Y. Luo, X. Zhao, F. Luo, L. Huang, Y. Li, and W. Wang, “Fabrication and study of laser-damage-resistant transparent conductive W-doped In2O3 films,” J. Phys. D: Appl. Phys. 44(21), 215101 (2011).
[Crossref]

H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]

Wang, Y.

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
[Crossref]

Wu, C.

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
[Crossref]

C. Wu, H. Huang, S. Wang, and K. Chang, “High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing,” IEEE Electron Device Lett. 35(10), 1031–1033 (2014).
[Crossref]

Xu, N. S.

J. K. Yao, N. S. Xu, S. Z. Deng, J. Chen, J. She, H. P. Shieh, P. T. Liu, and Y. P. Huang, “Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy,” IEEE Trans. Electron Devices 58(4), 1121–1126 (2011).
[Crossref]

Yahiaoui, K.

N. Lameche, S. Bouzid, M. Hamici, M. Boudissa, S. Messaci, and K. Yahiaoui, “Effect of indium doping on the optical properties and laser damage resistance of ZnO thin films,” Optik 127(20), 9663–9672 (2016).
[Crossref]

Yamaguchi, H.

M. Nakata, K. Takechi, K. Azuma, E. Tokumitsu, H. Yamaguchi, and S. Kaneko, “Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing,” Appl. Phys. Express 2, 021102 (2009).
[Crossref]

Yamamoto, T.

M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
[Crossref]

Yang, S.

Y. Yang, S. Yang, and K. Chou, “Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing,” IEEE Electron Device Lett. 31(9), 969–971 (2010).
[Crossref]

Yang, Y.

Y. Yang, S. Yang, and K. Chou, “Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing,” IEEE Electron Device Lett. 31(9), 969–971 (2010).
[Crossref]

Yao, J. K.

J. K. Yao, J. M. Lin, F. Ye, and P. Fan, “Optical and electrical properties of transparent conductive air-stable C-axis aligned crystalline InGaZnON thin films,” Opt. Mater. Express 8(10), 2991–2999 (2018).
[Crossref]

J. K. Yao, F. Ye, and P. Fan, “Optical and electrical properties of In2MgO4 thin film for transistor,” Opt. Mater. Express 8(11), 3438–3446 (2018).
[Crossref]

J. K. Yao, N. S. Xu, S. Z. Deng, J. Chen, J. She, H. P. Shieh, P. T. Liu, and Y. P. Huang, “Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy,” IEEE Trans. Electron Devices 58(4), 1121–1126 (2011).
[Crossref]

J. K. Yao, J. D. Shao, H. B. He, and Z. X. Fan, “Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors,” Appl. Surf. Sci. 253(22), 8911–8914 (2007).
[Crossref]

J. K. Yao, F. Ye, and P. Fan, “Substrate temperature and N2 partial pressure dependent optical and electrical properties of InGaZnON thin films,” Mater. Res. Bull., to be published (2019).

Ye, F.

Yoo, J.

Yu, G.

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
[Crossref]

Zan, H.

H. Zan, W. Chen, C. Chou, C. Tsai, C. Huang, and H. Hsueh, “Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors,” Electrochem. Solid-State Lett. 13(5), H144–H146 (2010).
[Crossref]

Zhang, D.

H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]

H. Wang, D. Zhang, Y. Luo, X. Zhao, F. Luo, L. Huang, Y. Li, and W. Wang, “Fabrication and study of laser-damage-resistant transparent conductive W-doped In2O3 films,” J. Phys. D: Appl. Phys. 44(21), 215101 (2011).
[Crossref]

Zhang, R.

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
[Crossref]

Zhao, X.

H. Wang, D. Zhang, Y. Luo, X. Zhao, F. Luo, L. Huang, Y. Li, and W. Wang, “Fabrication and study of laser-damage-resistant transparent conductive W-doped In2O3 films,” J. Phys. D: Appl. Phys. 44(21), 215101 (2011).
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H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
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Zheng, Y.

X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
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Appl. Phys. Express (1)

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M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima, T. Takei, T. Yamamoto, and T. Kurita, “Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate,” Appl. Phys. Lett. 103(14), 142111 (2013).
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X. Huang, C. Wu, H. Lu, F. Ren, D. Chen, Y. Liu, G. Yu, R. Zhang, Y. Zheng, and Y. Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing,” IEEE Electron Device Lett. 35(10), 1034–1036 (2014).
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C. Wu, H. Huang, S. Wang, and K. Chang, “High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing,” IEEE Electron Device Lett. 35(10), 1031–1033 (2014).
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D. Scorticati, G. Romer, A. Veld, and D. Lange, “Modeling of Temperature Cycles Induced by Pico and Nanosecond Laser Pulses in Zinc Oxide and Molybdenum Thin Films,” J. Heat Transfer 138(3), 031301 (2016).
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J. Phys. D: Appl. Phys. (3)

J. Bermundo, Y. Ishikawa, M. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, “Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution processed hybrid passivation layers,” J. Phys. D: Appl. Phys. 49(3), 035102 (2016).
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H. Wang, D. Zhang, Y. Luo, X. Zhao, F. Luo, L. Huang, Y. Li, and W. Wang, “Fabrication and study of laser-damage-resistant transparent conductive W-doped In2O3 films,” J. Phys. D: Appl. Phys. 44(21), 215101 (2011).
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Z. Tao, X. Liu, W. Lei, and J. Chen, “High sensitive solar blind phototransistor based on ZnO nanorods/IGZO heterostructure annealed by laser”,” Mater. Lett. 228, 451–455 (2018).
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Opt. Express (1)

Opt. Mater. Express (3)

Optik (1)

N. Lameche, S. Bouzid, M. Hamici, M. Boudissa, S. Messaci, and K. Yahiaoui, “Effect of indium doping on the optical properties and laser damage resistance of ZnO thin films,” Optik 127(20), 9663–9672 (2016).
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J. K. Yao, F. Ye, and P. Fan, “Substrate temperature and N2 partial pressure dependent optical and electrical properties of InGaZnON thin films,” Mater. Res. Bull., to be published (2019).

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Figures (9)

Fig. 1.
Fig. 1. XRD patterns of thin films.
Fig. 2.
Fig. 2. The optical properties of thin films.
Fig. 3.
Fig. 3. The PL spectra of thin films.
Fig. 4.
Fig. 4. The LIDTs of thin films.
Fig. 5.
Fig. 5. (a) Electrical and (b) thermal conductivities of thin films.
Fig. 6.
Fig. 6. The laser damage morphologies of thin films.
Fig. 7.
Fig. 7. SEM morphologies of thin films at increased laser energy density.
Fig. 8.
Fig. 8. Raman spectra of thin films at different laser damage regions with increased energy level.
Fig. 9.
Fig. 9. (a) Relation of Ne with Eg and m*/m0 (b) Cole-Cole plots of dielectric function for films.

Equations (3)

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O O V O + 2 e + 1 / 2 O 2 ( g ) ,
κ e = 2 ( k B q ) 2 σ T ,
S = 8 π 2 k B 2 T 3 q h 2 m ( π 3 N e ) 2 / 3 ,

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