Tailoring the scintillation properties of &#x03B2;-Ga<sub>2</sub>O<sub>3</sub> by doping with Ce and codoping with Si

Michal Makowski; Winicjusz Drozdowski; Marcin E. Witkowski; Andrzej J. Wojtowicz; Klaus Irmscher; Robert Schewski; Zbigniew Galazka

doi:10.1364/OME.9.003738

Tailoring the scintillation properties of β-Ga₂O₃ by doping with Ce and codoping with Si

Michal Makowski, Winicjusz Drozdowski, Marcin E. Witkowski, Andrzej J. Wojtowicz, Klaus Irmscher, Robert Schewski, and Zbigniew Galazka

Optical Materials Express
Vol. 9,
Issue 9,
pp. 3738-3743
(2019)
•https://doi.org/10.1364/OME.9.003738

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Michal Makowski, Winicjusz Drozdowski, Marcin E. Witkowski, Andrzej J. Wojtowicz, Klaus Irmscher, Robert Schewski, and Zbigniew Galazka, "Tailoring the scintillation properties of β-Ga₂O₃ by doping with Ce and codoping with Si," Opt. Mater. Express 9, 3738-3743 (2019)

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About this Article
History
- Original Manuscript: June 17, 2019
- Revised Manuscript: August 9, 2019
- Manuscript Accepted: August 9, 2019
- Published: August 19, 2019

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Abstract

Measurements of pulse height spectra and scintillation time profiles performed on Czochralski-grown β-Ga₂O₃, β-Ga₂O₃:Ce, and β-Ga₂O₃:Ce,Si crystals are reported. The highest value of scintillation yield, 7040 ph/MeV, was achieved for pure β-Ga₂O₃ at a low free electron concentration, nevertheless Ce-doped crystals could also approach high values thereof. Si-codoping, however, decreases the scintillation yield. The presence of Ce, and the more of Ce and Si, in β-Ga₂O₃ significantly increases the contribution of the fastest components in scintillation time profiles, which makes β-Ga₂O₃ a very fast scintillator under γ-excitation.

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References

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Year
|
Author
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Publication

L. de Boisbaudran, “On the chemical and spectroscopic characters of a new metal (gallium),” Philos. Mag. Ser. 4 50(332), 414–416 (1875).
[Crossref]
S. I. Stepanov, V. I. Nikolaev, V. E. Bougrov, and A. E. Romanov, “Gallium oxide: properties and applications - a review,” Rev. Adv. Mater. Sci. 44, 63–86 (2016).
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[Crossref]
T. Yanagida, G. Okada, T. Kato, D. Nakauchi, and S. Yanagida, “Fast and high light yield scintillation in the Ga2O3 semiconductor,” Mater,” Appl. Phys. Express 9(4), 042601 (2016).
[Crossref]
D. Szalkai, Z. Galazka, K. Irmscher, P. Tutto, A. Klix, and D. Gehre, “β-Ga2O3 solid state devices for fast neutron detection,” IEEE Trans. Nucl. Sci. 64(6), 1574–1579 (2017).
[Crossref]
Y. Usui, T. Kato, N. Kawano, G. Okada, N. Kawaguchi, and T. Yanagida, “Comparative study of scintillation properties of Ga2O3 single crystals and ceramics,” J. Lumin. 200, 81–86 (2018).
[Crossref]
N. He, H. Tang, B. Liu, Z. Zhu, Q. Li, C. Guo, M. Gu, J. Xu, J. Liu, M. Xu, L. Chen, and X. Ouyang, “Ultra-fast scintillation properties of β-Ga2O3 single crystals grown by floating zone method,” Nucl. Instrum. Methods Phys. Res., Sect. A 888, 9–12 (2018).
[Crossref]
Y. Usui, T. Oya, G. Okada, N. Kawaguchi, and T. Yanagida, “Ce-doped Ga2O3 single crystalline semiconductor showing scintillation features,” Optik 143, 150–157 (2017).
[Crossref]
Y. Usui, D. Nakauchi, N. Kawano, G. Okada, N. Kawaguchi, and T. Yanagida, “Scintillation and optical properties of Sn-doped Ga2O3 single crystals,” J. Phys. Chem. Solids 117, 36–41 (2018).
[Crossref]
W. Drozdowski, M. Makowski, M. E. Witkowski, A. J. Wojtowicz, Z. Galazka, K. Irmscher, and R. Schewski, “β-Ga2O3:Ce as a fast scintillator: An unclear role of cerium,” Radiat. Meas. 121, 49–53 (2019).
[Crossref]
Z. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M. E. Witkowski, M. Makowski, A. J. Wojtowicz, I. M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, M. Bickermann, and T. Schröder, “Bulk β-Ga2O3 single crystals doped with Ce, Ce + Si, Ce + Al, and Ce + Al + Si obtained by the Czochralski method for detection of nuclear radiation,” submitted to J. Alloys Compd.
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[Crossref]
Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, and M. Bickermann, “Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method,” ECS J. Solid State Sci. Technol. 6(2), Q3007–Q3011 (2017).
[Crossref]
Z. Galazka, S. Ganschow, A. Fiedler, R. Bertram, D. Klimm, K. Irmscher, R. Schewski, M. Pietsch, M. Albrecht, and M. Bickermann, “Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al,” J. Cryst. Growth 486, 82–90 (2018).
[Crossref]
L. M. Bollinger and G. E. Thomas, “Measurement of the time dependence of scintillation intensity by a delayed-coincidence method,” Rev. Sci. Instrum. 32(9), 1044–1050 (1961).
[Crossref]

2019 (1)

W. Drozdowski, M. Makowski, M. E. Witkowski, A. J. Wojtowicz, Z. Galazka, K. Irmscher, and R. Schewski, “β-Ga2O3:Ce as a fast scintillator: An unclear role of cerium,” Radiat. Meas. 121, 49–53 (2019).
[Crossref]

2018 (5)

Z. Galazka, S. Ganschow, A. Fiedler, R. Bertram, D. Klimm, K. Irmscher, R. Schewski, M. Pietsch, M. Albrecht, and M. Bickermann, “Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al,” J. Cryst. Growth 486, 82–90 (2018).
[Crossref]

Z. Galazka, “β-Ga2O3 for wide-bandgap electronics and optoelectronics,” Semicond. Sci. Technol. 33(11), 113001 (2018).
[Crossref]

Y. Usui, T. Kato, N. Kawano, G. Okada, N. Kawaguchi, and T. Yanagida, “Comparative study of scintillation properties of Ga2O3 single crystals and ceramics,” J. Lumin. 200, 81–86 (2018).
[Crossref]

N. He, H. Tang, B. Liu, Z. Zhu, Q. Li, C. Guo, M. Gu, J. Xu, J. Liu, M. Xu, L. Chen, and X. Ouyang, “Ultra-fast scintillation properties of β-Ga2O3 single crystals grown by floating zone method,” Nucl. Instrum. Methods Phys. Res., Sect. A 888, 9–12 (2018).
[Crossref]

Y. Usui, D. Nakauchi, N. Kawano, G. Okada, N. Kawaguchi, and T. Yanagida, “Scintillation and optical properties of Sn-doped Ga2O3 single crystals,” J. Phys. Chem. Solids 117, 36–41 (2018).
[Crossref]

2017 (3)

D. Szalkai, Z. Galazka, K. Irmscher, P. Tutto, A. Klix, and D. Gehre, “β-Ga2O3 solid state devices for fast neutron detection,” IEEE Trans. Nucl. Sci. 64(6), 1574–1579 (2017).
[Crossref]

Y. Usui, T. Oya, G. Okada, N. Kawaguchi, and T. Yanagida, “Ce-doped Ga2O3 single crystalline semiconductor showing scintillation features,” Optik 143, 150–157 (2017).
[Crossref]

Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, and M. Bickermann, “Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method,” ECS J. Solid State Sci. Technol. 6(2), Q3007–Q3011 (2017).
[Crossref]

2016 (2)

T. Yanagida, G. Okada, T. Kato, D. Nakauchi, and S. Yanagida, “Fast and high light yield scintillation in the Ga2O3 semiconductor,” Mater,” Appl. Phys. Express 9(4), 042601 (2016).
[Crossref]

S. I. Stepanov, V. I. Nikolaev, V. E. Bougrov, and A. E. Romanov, “Gallium oxide: properties and applications - a review,” Rev. Adv. Mater. Sci. 44, 63–86 (2016).

2008 (1)

E. G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, and K. Aoki, “Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping,” Appl. Phys. Lett. 92(20), 202120 (2008).
[Crossref]

1961 (1)

L. M. Bollinger and G. E. Thomas, “Measurement of the time dependence of scintillation intensity by a delayed-coincidence method,” Rev. Sci. Instrum. 32(9), 1044–1050 (1961).
[Crossref]

1875 (1)

L. de Boisbaudran, “On the chemical and spectroscopic characters of a new metal (gallium),” Philos. Mag. Ser. 4 50(332), 414–416 (1875).
[Crossref]

Albrecht, M.

Aoki, K.

Bertram, R.

Bickermann, M.

Z. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M. E. Witkowski, M. Makowski, A. J. Wojtowicz, I. M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, M. Bickermann, and T. Schröder, “Bulk β-Ga2O3 single crystals doped with Ce, Ce + Si, Ce + Al, and Ce + Al + Si obtained by the Czochralski method for detection of nuclear radiation,” submitted to J. Alloys Compd.

Bollinger, L. M.

L. M. Bollinger and G. E. Thomas, “Measurement of the time dependence of scintillation intensity by a delayed-coincidence method,” Rev. Sci. Instrum. 32(9), 1044–1050 (1961).
[Crossref]

Bougrov, V. E.

S. I. Stepanov, V. I. Nikolaev, V. E. Bougrov, and A. E. Romanov, “Gallium oxide: properties and applications - a review,” Rev. Adv. Mater. Sci. 44, 63–86 (2016).

Chen, L.

de Boisbaudran, L.

L. de Boisbaudran, “On the chemical and spectroscopic characters of a new metal (gallium),” Philos. Mag. Ser. 4 50(332), 414–416 (1875).
[Crossref]

Dittmar, A.

Drozdowski, W.

Fiedler, A.

Galazka, Z.

Z. Galazka, “β-Ga2O3 for wide-bandgap electronics and optoelectronics,” Semicond. Sci. Technol. 33(11), 113001 (2018).
[Crossref]

D. Szalkai, Z. Galazka, K. Irmscher, P. Tutto, A. Klix, and D. Gehre, “β-Ga2O3 solid state devices for fast neutron detection,” IEEE Trans. Nucl. Sci. 64(6), 1574–1579 (2017).
[Crossref]

Ganschow, S.

Gehre, D.

D. Szalkai, Z. Galazka, K. Irmscher, P. Tutto, A. Klix, and D. Gehre, “β-Ga2O3 solid state devices for fast neutron detection,” IEEE Trans. Nucl. Sci. 64(6), 1574–1579 (2017).
[Crossref]

Gu, M.

Guo, C.

Hanke, I. M.

He, N.

Irmscher, K.

D. Szalkai, Z. Galazka, K. Irmscher, P. Tutto, A. Klix, and D. Gehre, “β-Ga2O3 solid state devices for fast neutron detection,” IEEE Trans. Nucl. Sci. 64(6), 1574–1579 (2017).
[Crossref]

Kato, T.

T. Yanagida, G. Okada, T. Kato, D. Nakauchi, and S. Yanagida, “Fast and high light yield scintillation in the Ga2O3 semiconductor,” Mater,” Appl. Phys. Express 9(4), 042601 (2016).
[Crossref]

Kawaguchi, N.

Y. Usui, T. Oya, G. Okada, N. Kawaguchi, and T. Yanagida, “Ce-doped Ga2O3 single crystalline semiconductor showing scintillation features,” Optik 143, 150–157 (2017).
[Crossref]

Kawano, N.

Klimm, D.

Klix, A.

D. Szalkai, Z. Galazka, K. Irmscher, P. Tutto, A. Klix, and D. Gehre, “β-Ga2O3 solid state devices for fast neutron detection,” IEEE Trans. Nucl. Sci. 64(6), 1574–1579 (2017).
[Crossref]

Kwasniewski, A.

Li, Q.

Liu, B.

Liu, J.

Makowski, M.

Nakauchi, D.

T. Yanagida, G. Okada, T. Kato, D. Nakauchi, and S. Yanagida, “Fast and high light yield scintillation in the Ga2O3 semiconductor,” Mater,” Appl. Phys. Express 9(4), 042601 (2016).
[Crossref]

Naumann, M.

Nikolaev, V. I.

S. I. Stepanov, V. I. Nikolaev, V. E. Bougrov, and A. E. Romanov, “Gallium oxide: properties and applications - a review,” Rev. Adv. Mater. Sci. 44, 63–86 (2016).

Okada, G.

Y. Usui, T. Oya, G. Okada, N. Kawaguchi, and T. Yanagida, “Ce-doped Ga2O3 single crystalline semiconductor showing scintillation features,” Optik 143, 150–157 (2017).
[Crossref]

T. Yanagida, G. Okada, T. Kato, D. Nakauchi, and S. Yanagida, “Fast and high light yield scintillation in the Ga2O3 semiconductor,” Mater,” Appl. Phys. Express 9(4), 042601 (2016).
[Crossref]

Ouyang, X.

Oya, T.

Y. Usui, T. Oya, G. Okada, N. Kawaguchi, and T. Yanagida, “Ce-doped Ga2O3 single crystalline semiconductor showing scintillation features,” Optik 143, 150–157 (2017).
[Crossref]

Pietsch, M.

Romanov, A. E.

S. I. Stepanov, V. I. Nikolaev, V. E. Bougrov, and A. E. Romanov, “Gallium oxide: properties and applications - a review,” Rev. Adv. Mater. Sci. 44, 63–86 (2016).

Schewski, R.

Schröder, T.

Schulz, T.

Shimamura, K.

Stepanov, S. I.

S. I. Stepanov, V. I. Nikolaev, V. E. Bougrov, and A. E. Romanov, “Gallium oxide: properties and applications - a review,” Rev. Adv. Mater. Sci. 44, 63–86 (2016).

Szalkai, D.

D. Szalkai, Z. Galazka, K. Irmscher, P. Tutto, A. Klix, and D. Gehre, “β-Ga2O3 solid state devices for fast neutron detection,” IEEE Trans. Nucl. Sci. 64(6), 1574–1579 (2017).
[Crossref]

Tang, H.

Thomas, G. E.

L. M. Bollinger and G. E. Thomas, “Measurement of the time dependence of scintillation intensity by a delayed-coincidence method,” Rev. Sci. Instrum. 32(9), 1044–1050 (1961).
[Crossref]

Tutto, P.

D. Szalkai, Z. Galazka, K. Irmscher, P. Tutto, A. Klix, and D. Gehre, “β-Ga2O3 solid state devices for fast neutron detection,” IEEE Trans. Nucl. Sci. 64(6), 1574–1579 (2017).
[Crossref]

Uecker, R.

Ujiie, T.

Usui, Y.

Y. Usui, T. Oya, G. Okada, N. Kawaguchi, and T. Yanagida, “Ce-doped Ga2O3 single crystalline semiconductor showing scintillation features,” Optik 143, 150–157 (2017).
[Crossref]

Víllora, E. G.

Witkowski, M. E.

Wojtowicz, A. J.

Xu, J.

Xu, M.

Yanagida, S.

T. Yanagida, G. Okada, T. Kato, D. Nakauchi, and S. Yanagida, “Fast and high light yield scintillation in the Ga2O3 semiconductor,” Mater,” Appl. Phys. Express 9(4), 042601 (2016).
[Crossref]

Yanagida, T.

Y. Usui, T. Oya, G. Okada, N. Kawaguchi, and T. Yanagida, “Ce-doped Ga2O3 single crystalline semiconductor showing scintillation features,” Optik 143, 150–157 (2017).
[Crossref]

T. Yanagida, G. Okada, T. Kato, D. Nakauchi, and S. Yanagida, “Fast and high light yield scintillation in the Ga2O3 semiconductor,” Mater,” Appl. Phys. Express 9(4), 042601 (2016).
[Crossref]

Yoshikawa, Y.

Zhu, Z.

Appl. Phys. Express (1)

T. Yanagida, G. Okada, T. Kato, D. Nakauchi, and S. Yanagida, “Fast and high light yield scintillation in the Ga2O3 semiconductor,” Mater,” Appl. Phys. Express 9(4), 042601 (2016).
[Crossref]

Appl. Phys. Lett. (1)

ECS J. Solid State Sci. Technol. (1)

IEEE Trans. Nucl. Sci. (1)

D. Szalkai, Z. Galazka, K. Irmscher, P. Tutto, A. Klix, and D. Gehre, “β-Ga2O3 solid state devices for fast neutron detection,” IEEE Trans. Nucl. Sci. 64(6), 1574–1579 (2017).
[Crossref]

J. Cryst. Growth (1)

J. Lumin. (1)

J. Phys. Chem. Solids (1)

Nucl. Instrum. Methods Phys. Res., Sect. A (1)

Optik (1)

Y. Usui, T. Oya, G. Okada, N. Kawaguchi, and T. Yanagida, “Ce-doped Ga2O3 single crystalline semiconductor showing scintillation features,” Optik 143, 150–157 (2017).
[Crossref]

Philos. Mag. Ser. 4 (1)

L. de Boisbaudran, “On the chemical and spectroscopic characters of a new metal (gallium),” Philos. Mag. Ser. 4 50(332), 414–416 (1875).
[Crossref]

Radiat. Meas. (1)

Rev. Adv. Mater. Sci. (1)

S. I. Stepanov, V. I. Nikolaev, V. E. Bougrov, and A. E. Romanov, “Gallium oxide: properties and applications - a review,” Rev. Adv. Mater. Sci. 44, 63–86 (2016).

Rev. Sci. Instrum. (1)

L. M. Bollinger and G. E. Thomas, “Measurement of the time dependence of scintillation intensity by a delayed-coincidence method,” Rev. Sci. Instrum. 32(9), 1044–1050 (1961).
[Crossref]

Semicond. Sci. Technol. (1)

Z. Galazka, “β-Ga2O3 for wide-bandgap electronics and optoelectronics,” Semicond. Sci. Technol. 33(11), 113001 (2018).
[Crossref]

Other (1)

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Fig. 1. Representative pulse height spectra of β-Ga₂O₃, β-Ga₂O₃:Ce, and β-Ga₂O₃:Ce,Si.

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Fig. 2. Scintillation yield of β-Ga₂O₃, β-Ga₂O₃:Ce, and β-Ga₂O₃:Ce,Si as a function of free electron concentration.

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Fig. 3. Representative scintillation time profiles of β-Ga₂O₃, β-Ga₂O₃:Ce, and β-Ga₂O₃:Ce,Si.

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Fig. 4. Scintillation mean decay time of β-Ga₂O₃, β-Ga₂O₃:Ce, and β-Ga₂O₃:Ce,Si as a function of free electron concentration.

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Tables (1)

Table 1. Summary of properties of the studied β-Ga₂O₃ crystals (n - free electron concentration, Y - scintillation yield, R - energy resolution at 662 keV, τ_i - scintillation decay time constants with their contributions in brackets, τ_mean - scintillation mean decay time)

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Equations (1)

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τ_{m e a n} = \frac{\sum_{i = 1}^{4} A_{i} τ_{i}^{2}}{\sum_{i = 1}^{4} A_{i} τ_{i}}

ID	dopants	n (cm⁻³)	Y (ph/MeV)	R (%)	τ_i (ns)	τ_mean (ns)
U1	-	2.5·10¹⁶	7040	9.20	4.92 (2.4%) 28.7 (6.1%) 148 (15.9%) 1198 (76.5%)	922
C1	Ce (0.1%)	3.3·10¹⁶	6580	10.5	5.57 (2.6%) 35.8 (7.7%) 181 (19.5%) 1000 (70.2%)	741
S1	Ce (0.1%), Si (0.2%)	4.9·10¹⁸	2040	17.3	4.84 (15.7%) 23.0 (29.3%) 71.4 (42.9%) 467 (12.1%)	94.5
C2	Ce (0.25%)	7.0·10¹⁵	3700	13.7	5.62 (5.4%) 35.5 (12.8%) 171 (27.5%) 967 (54.3%)	577
S2	Ce (0.25%), Si (0.5%)	4.1·10¹⁸	970	27.4	3.45 (18.1%) 13.6 (42.6%) 38.1 (20.3%) 459 (19.0%)	101
C3	Ce (0.5%)	3.9·10¹⁶	4640	13.5	4.28 (5.1%) 27.5 (9.2%) 150 (23.7%) 916 (62.0%)	605
S3	Ce (0.5%), Si (0.2%)	3.8·10¹⁸	1610	22.2	4.04 (19.8%) 17.7 (28.5%) 51.2 (37.7%) 470 (14.0%)	91.0
C4	Ce (1.0%)	2.9·10¹⁷	5470	10.8	3.86 (8.4%) 22.0 (8.2%) 110 (20.4%) 479 (63.0%)	327
S4	Ce (1.0%), Si (0.2%)	5.3·10¹⁸	1330	21.4	3.12 (10.7%) 13.7 (28.1%) 41.7 (43.9%) 551 (17.3%)	118